CN110212403A - A kind of hollow laser light source emitter of semiconductor laser - Google Patents
A kind of hollow laser light source emitter of semiconductor laser Download PDFInfo
- Publication number
- CN110212403A CN110212403A CN201910632209.2A CN201910632209A CN110212403A CN 110212403 A CN110212403 A CN 110212403A CN 201910632209 A CN201910632209 A CN 201910632209A CN 110212403 A CN110212403 A CN 110212403A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- pyramid
- positive
- centimetre
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Abstract
The invention discloses a kind of hollow laser light source emitters of semiconductor laser, belong to semiconductor laser technique field.Present invention be characterized in that dihedral angle angle formed by the conical surface of positive eight pyramid and bottom surface is 45 degree；Eight conical surfaces of positive eight pyramid are the reflecting surface of bar outgoing beam of semiconductor laser centimetre；High reflection optical film is deposited in each conical surface, and the incidence angle of high reflection optical film is 45 degree, and the central wavelength of high reflection optical film is bar output wavelength of semiconductor laser centimetre；The corresponding semiconductor laser centimetre bar item of each conical surface, semiconductor laser centimetre bar item are distributed with the axis of cone of positive eight pyramid at axial symmetry；The collimated mirror collimation of bar output beam of each semiconductor laser centimetre, forms directional light；Directional light is incident on the conical surface of positive eight pyramid with 45 degree of angles, the conical reflecting through positive eight pyramid, eight light beams after reflection, surrounds octagon, forms the hollow light source of octagon, hollow light source is to be parallel to the injection of axis of cone direction.
Description
Technical field
The present invention relates to a kind of hollow laser light source emitters of semiconductor laser, belong to semiconductor laser technique field.
Background technique
Hollow laser light source is in laser optics, optical information processing, particle waveguide, isotopic separation, microelectronics and material
Science, biotechnology, medicine and atomics, molecules etc. have a wide range of applications in fields.People have utilized light
Eight kinds of methods such as beam shaping, such as geometrical optics approach, Identification with Method of Optical Holography and calculating holography method have developed various forms of hollow
Laser beam.However, these methods obtain hollow laser beam common ground be light intensity from light beam inward flange to central light strength by
Decrescence weak, theoretically some light intensity only on beam center are just zero, therefore can not obtain the hollow of high light intensity contrast ratio and swash
Light light beam, and the hollow laser beam of high light intensity contrast ratio is in the optical control of microcosmic particle, optical information processing and material science
Equal fields have important application.
Summary of the invention
In order to improve hollow laser intensity contrast, meanwhile, blackening size is improved, we have invented a kind of semiconductor lasers
Hollow laser light source emitter, meanwhile, the present invention also has the advantages that adjustment is easy.
A kind of hollow laser light source emitter of semiconductor laser of the present invention wraps it is characterized in that, as shown in Fig. 1
It includes: positive eight pyramid 1, semiconductor laser centimetre bar item 2 and collimating mirror 3；Two formed by each conical surface of positive eight pyramid 1 and bottom surface
Face angle angle is all 45 degree；High reflection optical film is deposited in each conical surface of positive eight pyramid 1, and the incidence angle of high reflection optical film is 45
Degree, the central wavelength of high reflection optical film are the output wavelength of semiconductor laser centimetre bar item 2；Positive each conical surface of eight pyramid 1
A corresponding semiconductor laser centimetre bar item 2, semiconductor laser centimetre bar item 2 is with the axis of cone of positive eight pyramid 1 at axial symmetry point
Cloth, 2 output wavelengths of each semiconductor laser centimetre bar item are identical.
A kind of hollow laser light source emitter of semiconductor laser of the present invention at work, compared with semiconductor laser li
Rice bar item is the same, and it is a branch of directional light that the output light of each semiconductor laser centimetre bar item 2, which is required to be collimated by collimating mirror 3,
As shown in Figure 2.Every beam directional light is incident on the conical surface of positive eight pyramid 1, the conical surface and parallel beam intersection line with 45 degree of angles in Fig. 2
Size be not larger than the luminous size of semiconductor laser centimetre bar item, the light beam of eight semiconductor laser centimetre bar items is through just
The conical reflecting of eight pyramids, eight light beams after reflection surround octagon, form the hollow laser light source of octagon, hollow
Laser light source realizes the hollow laser light source of high light intensity contrast ratio and Great Dark Spot size to be parallel to the injection of axis of cone direction.
As it can be seen that positive eight pyramid can change in a kind of hollow laser light source emitter of semiconductor laser of the present invention
At other orthopyramids, blackening size is improved, in addition can according to need, by adjusting the position of semiconductor laser centimetre bar item
It sets, as shown in Fig. 2, meeting the hollow laser light source of semiconductor laser that different blackening sizes require.
Due to having eight semiconductor laser centimetre bar items 2, each semiconductor laser centimetre bar in composition of the invention
Item 2 is all horizontal positioned, and the hollow laser beam exported after positive eight prismatic reflection is with the injection of vertical-horizontal direction, therefore, drop
The low resetting difficulty of the hollow laser light source emitter of semiconductor laser.
Detailed description of the invention
Fig. 1 is a kind of vertical view of the structural schematic diagram of the hollow laser light source emitter of semiconductor laser of the present invention
Figure, the figure are used as Figure of abstract simultaneously.Fig. 2 is the cross-sectional view in the direction A-A in Fig. 1, can clearly indicate each and partly lead
Bar light beam walking path situation of volumetric laser centimetre.
Specific embodiment
Below with reference to Fig. 1, the present invention is described in more detail.
A kind of hollow its concrete scheme of laser light source emitter of semiconductor laser of the present invention is as described below, such as Fig. 1
Shown, each conical surface of positive eight pyramid 1 and the dihedral angle of bottom surface are 45 degree；Fixed horizontal positioned, eight conical surfaces by positive eight pyramid
Direction is horizontally arranged a semiconductor laser centimetre bar item 2 respectively, and 2 light direction of semiconductor laser centimetre bar item, which is directed toward, to be corresponded to
The conical surface；Each semiconductor laser centimetre bar item 2 is distributed with the axis of cone of positive eight pyramid 1 at axial symmetry；From each semiconductor
The collimated mirror 3 of light beam that laser centimetre bar item 2 exports is collimated, and light beam becomes a branch of directional light after collimation；Every beam directional light
Each conical surface of positive eight pyramid 1 is incident on 45 degree of angles again, the conical surface is not larger than semiconductor with the size of parallel beam intersection line
The luminous size of laser centimetre bar item, every beam directional light passes through the conical reflecting of positive eight pyramid 1 again, according to light in even Jie of both of which
Reflection law when matter interface is reflected show that angle of reflection of every beam directional light when two interfaces are reflected is equal to incidence angle, because
This, eight light beams after reflection surround octagon, form the hollow laser light source of octagon, hollow laser light source is with parallel
It is projected in axis of cone direction, finally realizes the hollow laser light source of high light intensity contrast ratio and Great Dark Spot size.
Claims (1)
1. a kind of hollow laser light source emitter of semiconductor laser characterized by comprising positive eight pyramid (1), semiconductor swash
Light centimetre bar item (2), collimating mirror (3)；Dihedral angle angle formed by the conical surface of positive eight pyramid (1) and bottom surface is 45 degree；Just
High reflection optical film is deposited in each conical surface of eight pyramids (1), and the incidence angle of high reflection optical film is 45 degree, high reflection optical film
Central wavelength is the output wavelength of semiconductor laser centimetre bar item (2)；Positive each conical surface of eight pyramid (1) corresponding one and half is led
Volumetric laser centimetre bar item (2), semiconductor laser centimetre bar item (2) are distributed with the axis of cone of positive eight pyramid (1) at axial symmetry, each
Semiconductor laser centimetre bar item (2) output wavelength is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910632209.2A CN110212403A (en) | 2019-07-13 | 2019-07-13 | A kind of hollow laser light source emitter of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910632209.2A CN110212403A (en) | 2019-07-13 | 2019-07-13 | A kind of hollow laser light source emitter of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110212403A true CN110212403A (en) | 2019-09-06 |
Family
ID=67797532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910632209.2A Pending CN110212403A (en) | 2019-07-13 | 2019-07-13 | A kind of hollow laser light source emitter of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110212403A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421276A (en) * | 2020-10-09 | 2022-04-29 | 西安立芯光电科技有限公司 | Axisymmetric semiconductor laser bar beam combining technology and module |
-
2019
- 2019-07-13 CN CN201910632209.2A patent/CN110212403A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421276A (en) * | 2020-10-09 | 2022-04-29 | 西安立芯光电科技有限公司 | Axisymmetric semiconductor laser bar beam combining technology and module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3303868B2 (en) | Optically transparent film | |
| JP6292767B2 (en) | Single emitter etendue aspect ratio scaler | |
| CN203688067U (en) | Digital controllable spectroscopic light source system | |
| CN104819433B (en) | Ellipse light spot realization device, light spot adjusting device and operating lamp | |
| CN103698007B (en) | A kind of digital-controllable spectroscopic light source system and regulate and control method thereof | |
| KR20030097805A (en) | Element for the combined symmetrization and homogenization of a bundle of beams | |
| JP2015501508A (en) | Light source system and laser light source | |
| KR102422784B1 (en) | Apparatus for light detection and ranging | |
| CN109541810A (en) | A kind of light uniforming device | |
| CN1310352A (en) | Equipment for controlling light direction dynamically in wide view field | |
| JP2017146602A (en) | Device for shaping laser beam | |
| CN102540471B (en) | Optical system for shaping a laser beam and laser system having such an optical system | |
| CN110212403A (en) | A kind of hollow laser light source emitter of semiconductor laser | |
| CN105793757B (en) | For making the device of shaping laser radiation | |
| CN113156753A (en) | Projection system and projector | |
| CN208886676U (en) | Lens and light source module group | |
| CN209844202U (en) | Semiconductor laser hollow laser light source emitting device | |
| CN111029906A (en) | Correcting system of laser, light source system and projection device | |
| CN1617403A (en) | Optical fiber coupling structure of multiple semiconductor laser/laser array | |
| JPH0498214A (en) | Device for irradiating with laser beam | |
| CN218272947U (en) | Point laser light source system with adjustable homological double-beam included angle | |
| CN216595763U (en) | Generating device for rectangular line light spots | |
| CN212175039U (en) | Inner hole cladding laser system based on rectangular integrating mirror | |
| CN110190516A (en) | A kind of 100 semiconductor laser single tube emitters of conjunction beam | |
| CN113898883A (en) | Laser lighting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |