CN110190516A - A kind of 100 semiconductor laser single tube emitters of conjunction beam - Google Patents

A kind of 100 semiconductor laser single tube emitters of conjunction beam Download PDF

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Publication number
CN110190516A
CN110190516A CN201910632208.8A CN201910632208A CN110190516A CN 110190516 A CN110190516 A CN 110190516A CN 201910632208 A CN201910632208 A CN 201910632208A CN 110190516 A CN110190516 A CN 110190516A
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CN
China
Prior art keywords
semiconductor laser
laser single
single tube
pyramid
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910632208.8A
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Chinese (zh)
Inventor
不公告发明人
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Hainan Normal University
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Hainan Normal University
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Filing date
Publication date
Application filed by Hainan Normal University filed Critical Hainan Normal University
Priority to CN201910632208.8A priority Critical patent/CN110190516A/en
Publication of CN110190516A publication Critical patent/CN110190516A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075Beam steering

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a kind of 100 semiconductor laser single tube emitters of conjunction beam, which is characterized in that dihedral angle angle formed by the conical surface of positive ten pyramid and bottom surface is 45 degree;Each conical surface is semiconductor laser single tube light beam reflecting surface;High reflection optical film is deposited in each conical surface, and the incidence angle of high reflection optical film is 45 degree, and the central wavelength of high reflection optical film is semiconductor laser single tube output wavelength;The corresponding one group of semiconductor laser single tube of each conical surface, every group includes ten semiconductor laser single tubes;Every group of ten semiconductor laser single tubes are distributed with the axis of cone at axial symmetry along the vertical arrangement in axis of cone direction, ten groups of semiconductor laser single tubes;Each collimated mirror collimation of semiconductor laser single tube output beam, forms directional light;Directional light is incident on the conical surface of positive ten pyramid with 45 degree of angles, and through conical reflecting, the reflected beams are projected along axis of cone direction is parallel to;Focus lamp focuses on the collimated light beam of all conical reflectings together, realizes and closes 100 semiconductor laser single tube emitters of beam.

Description

A kind of 100 semiconductor laser single tube emitters of conjunction beam
Technical field
The present invention relates to a kind of 100 semiconductor laser single tube emitters of conjunction beam, belong to semiconductor laser technique neck Domain.
Background technique
With the development of semiconductor laser technique, the output power of single-tube semiconductor laser is continuously improved, for example, 100 The micron wide single tube output power of item is up to 24.6 watts, and the continuous work service life is up to hours up to ten thousand.It is partly led to further increase The output power density of volumetric laser, the semiconductor laser single tube that has been born close beam technology.
The prior art is much to improve semiconductor laser output power density in such a way that semiconductor laser single tube closes beam, should The spatially simple split of tens semiconductor laser single tubes is formed array by mode, realizes that beam is closed in the space of multiple laser.It loses Regret, there are no 100 semiconductor laser single tubes are closed beams in one apparatus in prior art, in addition, existing skill In art while improving power, beam quality is but sacrificed, power density and distribution consistency degree are not fully up to expectations, it is difficult to meet The special demands of industrial processes and military field.
Summary of the invention
In order to improve beam quality, we have invented one while improving semiconductor laser single tube conjunction beam output power Kind closes 100 semiconductor laser single tube emitters of beam, meanwhile, the present invention also has the advantages that adjustment is easy.
A kind of 100 semiconductor laser single tube emitters of conjunction beam of the present invention wrap it is characterized in that, as shown in Fig. 1 It includes: positive ten pyramid 1, semiconductor laser single tube 2, collimating mirror 3 and focus lamp 4;Two faces formed by the conical surface of positive ten pyramid 1 and bottom surface Angle angle is 45 degree;High reflection optical film is deposited in each conical surface of positive ten pyramid 1, and the incidence angle of high reflection optical film is 45 degree, The central wavelength of high reflection optical film is the output wavelength of semiconductor laser single tube 2;Positive each conical surface of ten pyramid 1 is one group corresponding Semiconductor laser single tube 2, every group includes ten semiconductor laser single tubes 2, altogether 100 semiconductor laser single tubes;The ten of every group Axis of cone direction vertical arrangement of a semiconductor laser single tube 2 along positive ten pyramid 1;Ten groups of semiconductor laser single tubes 2 are with positive ten pyramid 1 The axis of cone be distributed at axial symmetry, each 2 output wavelength of semiconductor laser single tube is identical.
A kind of 100 semiconductor laser single tube emitters of conjunction beam of the present invention at work, compared with single tube semiconductor Laser is the same, and it is a branch of directional light that the output light of each semiconductor laser single tube 2, which is required to be collimated by collimating mirror 3, such as Fig. 2 institute Show.Every beam directional light is incident on the conical surface of positive ten pyramid 1, then the conical reflecting through positive ten pyramid 1 with 45 degree of angles in Fig. 2, instead To be parallel to the outgoing of axis of cone direction, emergent light line focus mirror 4 focuses irradiating light beam, realizes and closes 100 semiconductor laser single tube hairs of beam Injection device.
As it can be seen that positive ten pyramid can change in a kind of 100 semiconductor laser single tube emitters of conjunction beam of the present invention Change other orthopyramids more than ten conical surfaces into, every group of semiconductor laser single tube for including can be with extra ten, such device As soon as can close beam is more than hundred semiconductor laser single tubes, the beam power density finally exported is very high, and can basis Need to meet by adjusting the quantity of semiconductor laser single tube the application field of different output power density requirements.
Due to there is 100 semiconductor laser single tubes 2 in composition of the invention, each semiconductor laser single tube 2 all in Horizontal direction closes the light beam of beam output finally with the injection of vertical-horizontal direction, therefore, reduces semiconductor laser single tube combined beam light The resetting difficulty of system.
Detailed description of the invention
Fig. 1 is a kind of vertical view of structural schematic diagram for closing 100 semiconductor laser single tube emitters of beam of the present invention Figure, the figure are used as Figure of abstract simultaneously.Fig. 2 is the cross-sectional view in the direction A-A in Fig. 1, can clearly indicate each and partly lead Volumetric laser single tube light beam walking path situation.
Specific embodiment
Below with reference to Fig. 1, the present invention is described in more detail.
A kind of its concrete scheme of the semiconductor laser single tube emitter of conjunction beam 100 of the present invention is as described below, such as Fig. 1 It is shown.Each conical surface of positive ten pyramid 1 and the dihedral angle of bottom surface are 45 degree;Fixed horizontal positioned, ten conical surfaces by positive ten pyramid Direction is horizontally arranged one group of semiconductor laser single tube 2 respectively, and every group includes ten semiconductor laser single tubes 2;Every group of semiconductor swashs 2 light direction of light single tube is directed toward the conical surface corresponded to, and every group of ten semiconductor laser single tubes 2 are along the vertical arrangement in axis of cone direction;Often Group semiconductor laser single tube 2 is all distributed with the axis of cone of positive ten pyramid 1 at axial symmetry;It is exported from each semiconductor laser single tube 2 The collimated mirror 3 of light beam is collimated, and light beam becomes a branch of directional light;Every beam directional light is incident on positive ten pyramid 1 again with 45 degree of angles Each conical surface, every beam directional light passes through the conical reflecting of positive ten pyramid 1 again, reflected according to light in the even medium interface of both of which When reflection law, obtain angle of reflection of every beam directional light when two interfaces are reflected be equal to incidence angle, therefore, reflection of parallel beam Exit direction is to be parallel to the outgoing of axis of cone direction, and the last line focus mirror 4 of outgoing beam focuses, realizes and close 100 semiconductors of beam Laser single tube emitter.

Claims (1)

1. a kind of 100 semiconductor laser single tube emitters of conjunction beam characterized by comprising positive ten pyramid (1), semiconductor Laser single tube (2), collimating mirror (3), focus lamp (4);Dihedral angle angle formed by the conical surface of positive ten pyramid (1) and bottom surface is 45 degree;High reflection optical film is deposited in each conical surface of positive ten pyramid (1), and the incidence angle of high reflection optical film is 45 degree, high reflection The central wavelength of optical film is the output wavelength of semiconductor laser single tube (2);The positive each conical surface of ten pyramid (1) corresponding one and partly is led Volumetric laser single tube (2), every group includes ten semiconductor laser single tubes (2), and every group of semiconductor laser single tube (2) is along positive ten pyramid (1) the vertical arrangement in axis of cone direction;Ten groups of semiconductor laser single tubes (2) are distributed with the axis of cone of positive ten pyramid (1) at axial symmetry, often A semiconductor laser single tube (2) output wavelength is identical.
CN201910632208.8A 2019-07-13 2019-07-13 A kind of 100 semiconductor laser single tube emitters of conjunction beam Pending CN110190516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910632208.8A CN110190516A (en) 2019-07-13 2019-07-13 A kind of 100 semiconductor laser single tube emitters of conjunction beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910632208.8A CN110190516A (en) 2019-07-13 2019-07-13 A kind of 100 semiconductor laser single tube emitters of conjunction beam

Publications (1)

Publication Number Publication Date
CN110190516A true CN110190516A (en) 2019-08-30

Family

ID=67725723

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910632208.8A Pending CN110190516A (en) 2019-07-13 2019-07-13 A kind of 100 semiconductor laser single tube emitters of conjunction beam

Country Status (1)

Country Link
CN (1) CN110190516A (en)

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