CN209913237U - One hundred semiconductor laser single tube emitter of beam combination - Google Patents
One hundred semiconductor laser single tube emitter of beam combination Download PDFInfo
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- CN209913237U CN209913237U CN201921093936.8U CN201921093936U CN209913237U CN 209913237 U CN209913237 U CN 209913237U CN 201921093936 U CN201921093936 U CN 201921093936U CN 209913237 U CN209913237 U CN 209913237U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000012788 optical film Substances 0.000 claims abstract description 9
- 238000010586 diagram Methods 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a combined beam one hundred semiconductor laser single tube emitting device, which is characterized in that the dihedral angle formed by the conical surface and the bottom surface of a regular decapyramid is 45 degrees; each conical surface is a semiconductor laser single-tube light beam reflecting surface; each conical surface is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser single tube; each conical surface corresponds to a group of semiconductor laser single tubes, and each group comprises ten semiconductor laser single tubes; each group of ten semiconductor laser single tubes are vertically arranged along the direction of a cone axis, and the ten groups of semiconductor laser single tubes are axially and symmetrically distributed by the cone axis; each semiconductor laser single tube output light beam is collimated by a collimating mirror to form parallel light; parallel light enters the conical surface of the regular decapyramid at an angle of 45 degrees, is reflected by the conical surface, and a reflected light beam is emitted along the direction parallel to the conical axis; the focusing mirror focuses the parallel light beams reflected by all the conical surfaces together, and a hundred semiconductor laser single-tube emitting devices are combined.
Description
Technical Field
The invention relates to a combined-beam one-hundred semiconductor laser single-tube transmitting device, and belongs to the technical field of semiconductor lasers.
Background
With the development of semiconductor laser technology, the output power of a single-tube semiconductor laser is continuously increased, for example, the output power of a single tube with the width of 100 microns is 24.6 watts, and the continuous working life is as long as ten thousand hours. In order to further increase the output power density of semiconductor laser, a single-tube beam combining technique of semiconductor laser has been developed.
In the prior art, the output power density of a semiconductor laser is improved in a mode of combining single semiconductor laser tubes, dozens of single semiconductor laser tubes are simply combined in space to form an array, and spatial combining of multiple beams of laser is realized. Unfortunately, the prior art does not combine one hundred semiconductor laser single tubes into one device, and in addition, the prior art does not sacrifice beam quality, has unsatisfactory power density and distribution uniformity while improving power, and is difficult to meet special requirements in the fields of industrial processing and military affairs.
Disclosure of Invention
In order to improve the output power of a single semiconductor laser tube combined beam and improve the beam quality, the invention provides a combined-beam one-hundred single semiconductor laser tube emitting device, and meanwhile, the invention also has the advantage of easy installation and adjustment.
One hundred semiconductor laser single-tube emitting devices of a beam combination of the invention is characterized in that, as shown in figure 1, the emitting device comprises: the device comprises a regular decagonal pyramid 1, a semiconductor laser single tube 2, a collimating lens 3 and a focusing lens 4; the dihedral angle formed by the conical surface and the bottom surface of the regular deca-pyramid 1 is 45 degrees; each conical surface of the regular decapyramid 1 is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser single tube 2; each conical surface of the regular decapyramid 1 corresponds to one group of semiconductor laser single tubes 2, each group comprises ten semiconductor laser single tubes 2, and the total number of the semiconductor laser single tubes is one hundred; the ten semiconductor laser single tubes 2 in each group are vertically arranged along the cone axis direction of the regular decapyramid 1; the ten groups of semiconductor laser single tubes 2 are distributed in axial symmetry with the cone axis of the regular decapyramid 1, and the output wavelengths of the semiconductor laser single tubes 2 are the same.
When the combined-beam one-hundred semiconductor laser single-tube emitting device works, the output light of each semiconductor laser single tube 2 needs to be collimated into a beam of parallel light by the collimating lens 3 as same as that of the existing single-tube semiconductor laser, as shown in fig. 2. In fig. 2, each beam of parallel light enters the conical surface of the regular decapyramid 1 at an angle of 45 degrees, and is reflected by the conical surface of the regular decapyramid 1, a reflected light beam is emitted in a direction parallel to the conical axis, and the emitted light is focused by the focusing lens 4, so that one hundred semiconductor laser single-tube emitting devices are combined.
Therefore, in the combined-beam one-hundred semiconductor laser single tube emitting device, the regular decagonal pyramid can be changed into other regular pyramids with more than ten conical surfaces, and each group of semiconductor laser single tubes can comprise more than ten semiconductor laser single tubes.
The invention has the advantages that the structure of the invention comprises one hundred semiconductor laser single tubes 2, each semiconductor laser single tube 2 is in the horizontal direction, and the light beam output by the final beam combination is emitted in the vertical and horizontal directions, so the difficulty in assembling and adjusting the semiconductor laser single tube beam combination optical system is reduced.
Drawings
Fig. 1 is a top view of a schematic structural diagram of a combined-beam one-hundred semiconductor laser single-tube transmitting device according to the present invention, which is taken as an abstract drawing at the same time. Fig. 2 is a cross-sectional view taken along a-a in fig. 1, which clearly shows the traveling path of each semiconductor laser single-tube beam.
Detailed Description
The present invention is described in further detail below with reference to fig. 1.
The specific scheme of the combined-beam one-hundred semiconductor laser single-tube emitting device is as follows, and is shown in fig. 1. The dihedral angle between each conical surface and the bottom surface of the regular deca-pyramid 1 is 45 degrees; fixedly and horizontally placing a regular decapyramid, and horizontally placing a group of semiconductor laser single tubes 2 in the direction of ten conical surfaces respectively, wherein each group comprises ten semiconductor laser single tubes 2; the light emitting direction of each group of the semiconductor laser single tubes 2 points to the corresponding conical surface, and ten semiconductor laser single tubes 2 in each group are vertically arranged along the direction of the conical axis; each group of semiconductor laser single tubes 2 are distributed in axial symmetry with the cone axis of the regular deca-pyramid 1; the light beam output from each semiconductor laser single tube 2 is collimated by a collimating mirror 3, and becomes a beam of parallel light; each beam of parallel light is incident to each conical surface of the regular decapyramid 1 at an angle of 45 degrees, each beam of parallel light is reflected by the conical surface of the regular decapyramid 1, the reflection angle of each beam of parallel light when the two interfaces reflect is equal to the incident angle according to the reflection law when the light reflects on the interfaces of two uniform media, therefore, the emergent direction of the reflected parallel light beams is emergent in the direction parallel to the conical axis, the emergent light beams are finally focused by the focusing mirror 4, and the combined hundred semiconductor laser single-tube emitting device is realized.
Claims (1)
1. The utility model provides a close a hundred semiconductor laser single tube emitter that restraints which characterized in that includes: the device comprises a regular decagonal pyramid (1), a semiconductor laser single tube (2), a collimating lens (3) and a focusing lens (4); the dihedral angle formed by the conical surface and the bottom surface of the regular decapyramid (1) is 45 degrees; each conical surface of the regular decapyramid (1) is evaporated with a high-reflection optical film, the incident angle of the high-reflection optical film is 45 degrees, and the central wavelength of the high-reflection optical film is the output wavelength of the semiconductor laser single tube (2); each conical surface of the regular decapyramid (1) corresponds to one group of semiconductor laser single tubes (2), each group comprises ten semiconductor laser single tubes (2), and each group of semiconductor laser single tubes (2) are vertically arranged along the direction of the conical axis of the regular decapyramid (1); the ten groups of semiconductor laser single tubes (2) are distributed in an axisymmetric manner by using the cone axis of the regular deca-pyramid (1), and the output wavelengths of the semiconductor laser single tubes (2) are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921093936.8U CN209913237U (en) | 2019-07-13 | 2019-07-13 | One hundred semiconductor laser single tube emitter of beam combination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921093936.8U CN209913237U (en) | 2019-07-13 | 2019-07-13 | One hundred semiconductor laser single tube emitter of beam combination |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209913237U true CN209913237U (en) | 2020-01-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921093936.8U Expired - Fee Related CN209913237U (en) | 2019-07-13 | 2019-07-13 | One hundred semiconductor laser single tube emitter of beam combination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209913237U (en) |
-
2019
- 2019-07-13 CN CN201921093936.8U patent/CN209913237U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200107 |