CN209822675U - Semiconductor light-emitting element - Google Patents

Abstract

The utility model belongs to the semiconductor field, in particular to a semiconductor light-emitting element, which comprises a substrate, a first type conductive semiconductor layer, a second type conductive semiconductor layer and a light-emitting layer between the first type conductive semiconductor layer and the second type conductive semiconductor layer; a first electrode electrically connected to the first type conductivity semiconductor layer, and a second electrode electrically connected to the second type conductivity semiconductor layer; a current blocking layer is arranged between the first type conductivity semiconductor layer and the first electrode; the method is characterized in that: the current blocking layer includes a central region and a peripheral region surrounding the central region, and the first electrode covers the central region and a part of the peripheral region. The utility model designs the current blocking layer which comprises the central area and the peripheral area surrounding the central area, on one hand, the crowding benefit of the current is improved, and the current is expanded; on the other hand, the adhesiveness of the electrode is increased, and the stability of the electrode is improved.

Description

Semiconductor light-emitting element

Technical Field

The utility model belongs to the semiconductor field especially relates to a semiconductor light emitting element.

Background

A Light Emitting Diode (LED) is a semiconductor Light Emitting element, which is manufactured by using a semiconductor PN junction injection type electroluminescence principle. The LED has the advantages of low energy consumption, small volume, long service life, good stability, fast response, stable light-emitting wavelength and other good photoelectric properties, and has good application in the fields of illumination, household appliances, display screens, indicator lamps and the like at present.

How to improve the stability of the electrode and improve the light extraction efficiency is a technical problem that needs to be solved urgently in the industry.

Disclosure of Invention

In order to solve the above technical problem, the present invention provides a semiconductor light emitting device, including a substrate, a first type conductive semiconductor layer, a second type conductive semiconductor layer, and a light emitting layer therebetween; a first electrode electrically connected to the first type conductivity semiconductor layer, and a second electrode electrically connected to the second type conductivity semiconductor layer; a current blocking layer is arranged between the first type conductivity semiconductor layer and the first electrode; the method is characterized in that: the current blocking layer includes a central region and a peripheral region surrounding the central region, and the first electrode covers the central region and a part of the peripheral region.

Preferably, the central region is connected or not connected to the peripheral region.

Preferably, the peripheral region comprises a plurality of sub-regions.

Preferably, the subregions are connected or not connected.

Preferably, the shape of the sub-regions is the same or different.

Preferably, the areas of the sub-regions are the same or different.

Preferably, the projection of the sub-region is circular, fan-shaped or trapezoidal.

Preferably, the sub-regions are evenly distributed.

Preferably, a current spreading layer is further provided between the current blocking layer and the first electrode.

Preferably, the current spreading layer covers the current blocking layer and the surface of the first type conductivity semiconductor layer.

Preferably, the current spreading layer covers a surface of the first type conductivity semiconductor layer, and does not cover a surface of the current blocking layer.

Preferably, the surface of the current spreading layer is flush with the surface of the current blocking layer.

The utility model designs the current blocking layer which comprises the central area and the peripheral area surrounding the central area, on one hand, the crowding benefit of the current is improved, and the current is expanded; on the other hand, the adhesiveness of the electrode is increased, and the stability of the electrode is improved.

Drawings

Fig. 1 is a schematic top view of a semiconductor light emitting device according to embodiment 1 of the present invention.

Fig. 2 is a cross-sectional view taken along line a-a' of fig. 1.

Fig. 3 is a schematic top view of a semiconductor light emitting device according to embodiment 2 of the present invention.

Fig. 4 is a schematic top view of a semiconductor light emitting device according to embodiment 3 of the present invention.

Fig. 5 is a schematic cross-sectional structure view of a semiconductor light emitting device according to embodiment 4 of the present invention.

Fig. 6 is a schematic cross-sectional structure view of a semiconductor light emitting device according to embodiment 5 of the present invention.

Detailed Description

The structure of the semiconductor light emitting element of the present invention will be described in detail with reference to the drawings, and before further describing the present invention, it is to be understood that the present invention is not limited to the specific embodiments described below, since modifications can be made to the specific embodiments. It is also to be understood that the embodiments are presented by way of illustration, not of limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.

Example 1

Referring to fig. 1 and 2, a semiconductor light emitting element includes a substrate 10, a first type conductivity semiconductor layer 20, a second type conductivity semiconductor layer 30, and a light emitting layer 40 therebetween; a first electrode 50 electrically connected to the first type conductivity semiconductor layer 20, a second electrode 60 electrically connected to the second type conductivity semiconductor layer 30; a current blocking layer 70 is provided between the first type conductivity semiconductor layer 20 and the first electrode 50; the current blocking layer 70 includes a central region 71 and a peripheral region 72 surrounding the central region 71, and the first electrode 50 covers the central region 71 and a portion of the peripheral region 72. The first electrode 50 also has an extended current finger structure, and correspondingly, the current blocking layer 70 also includes an extension below the finger structure. The current blocking layer 70 may also be disposed under the second electrode, which is not particularly limited by the present invention.

The material of the substrate 10 is selected from Al₂O₃One of SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MnO, and any combination thereof. The epitaxial growth substrate 10 of the present embodiment is illustrated by taking a sapphire substrate 10(sapphire substrate) as an example, and the lattice orientation is (0001), but the present invention is not limited to the material and lattice orientation of the substrate 10 used. The substrate 10 can be patterned to change the propagation path of light, thereby improving the light extraction efficiency of the light emitting device.

The first conductivity type or the second conductivity type is n-or p-type doped, respectively, n-type doped with an n-type dopant such as Si, Ge, or Sn. The p-type is doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, without excluding other element equivalent substitution dopings. The first-type conductivity semiconductor layer 20 or the second-type conductivity semiconductor layer 30 may be a gallium nitride-based, gallium arsenide-based, gallium phosphide-based material.

The light-emitting layer 40 is a material capable of providing light radiation, specifically with a wavelength band of 550 ~ 950nm, such as red, yellow, orange, infrared light, and the light-emitting layer 40 may be a single quantum well or a multiple quantum well.

A buffer layer 21 may also be provided between the substrate 10 and the first-type conductivity semiconductor layer 20. Specifically, the buffer layer 21 may be a gallium nitride layer or an aluminum nitride layer to relieve lattice mismatch between the sapphire substrate 10 and the first-type conductivity semiconductor layer 20 or the second-type conductivity semiconductor layer 30.

The back surface of the substrate 10 has a reflective layer 11, which may be a distributed bragg reflector, for changing the propagation path of light and reflecting the light incident on the back surface of the substrate 10 to the front surface of the substrate 10, thereby improving the light extraction efficiency of the semiconductor light emitting device.

The central region 71 is connected or not connected to the peripheral region 72. The peripheral region 72 includes a plurality of sub-regions 721, the plurality of sub-regions 721 are uniformly distributed, the sub-regions 721 are connected or not connected, the shapes of the sub-regions 721 are the same or different, the areas of the sub-regions 721 are the same or different, and the projection of the sub-regions 721 on the first type conductivity semiconductor layer 20 is circular, fan-shaped, trapezoidal, or other irregular shapes.

In this embodiment, the central region 71 is not connected to the peripheral region 72, i.e., the central region 71 and the peripheral region 72 are independent regions.

The peripheral region 72 includes a plurality of sub-regions 721, and the sub-regions 721 are not connected, that is, the sub-regions 721 are independent regions. And the sub-regions 721 are the same in shape and area, and are uniformly distributed on the outer periphery of the central region 71.

Referring to fig. 1, the projection of the sub-region 721 on the first type conductivity semiconductor layer 20 is a circle, the number may be 2 ~ 6, preferably 5 sub-regions 721 in this embodiment, and the 5 sub-regions 721 are uniformly distributed on the outer periphery of the central region 71, the first electrode 50 covers the central region 71, and a partial region of the sub-region 721 toward the central region 71 side, so that the outer periphery of the sub-region 721 is not covered by the first electrode 50.

The first electrode 50 and the second electrode 60 are located on the same side of the substrate 10, and may also be located on two sides of the substrate 10, forming a vertical structure light emitting element.

Further, a current blocking layer 70 may also be disposed between the second electrode 60 and the second type conductivity semiconductor layer 30.

The insulating protective layer 80 covers the surfaces of the first-type conductivity semiconductor layer 20 and the second-type conductivity semiconductor layer 30, and may be made of silicon dioxide, silicon carbide, silicon nitride, or the like, and the protective layer 80 can prevent oxidation, contamination, or the like of the light-emitting element when exposed to air.

Example 2

Referring to fig. 3, the projection of the sub-region 721 on the first type conductivity semiconductor layer 20 is a circle in a trapezoid shape, the number may be 2 ~ 6, preferably 4 sub-regions 721 in this embodiment, and the 4 sub-regions 721 are uniformly distributed on the outer periphery of the central region 71, the first electrode 50 covers the central region 71, and a partial region of the sub-region 721 toward one side of the central region 71, so that the outer periphery of the sub-region 721 is not covered by the first electrode 50.

Example 3

Referring to fig. 4, the central region 71 is connected to the peripheral region 72, the peripheral region 72 includes a plurality of sub-regions 721, the sub-regions 721 are not connected, that is, the sub-regions 721 are independent regions, and the shapes and areas of the sub-regions 721 are the same and are uniformly distributed on the periphery of the central region 71, the projection of the sub-regions 721 on the first type conductivity semiconductor layer 20 is trapezoidal, the number of the sub-regions may be 2 ~ 6, and 4 sub-regions 721 are preferred in this embodiment.

Example 4

Referring to fig. 5, the difference between the present embodiment and the embodiments 1, 2 and 3 is: the current blocking layer 70 and the first electrode 50 also have a current spreading layer 90 therebetween, and the current spreading layer 90 covers the current blocking layer 70 and the surface of the first-type conductivity semiconductor layer 20. The current spreading layer 90 facilitates spreading of the current, and may be made of indium tin oxide, which is not limited by the present invention.

Example 5

Referring to fig. 6, the difference between this embodiment and embodiment 4 is: the current spreading layer 90 covers the surface of the first-type conductivity semiconductor layer 20, and does not cover the surface of the current blocking layer 70, i.e., the gap between the central region 71 and the peripheral region 72 and the gap of the adjacent sub-region 721, is filled with the current spreading layer 90. Further, the surface of the current spreading layer 90 is flush with the surface of the current blocking layer 70, and the thickness of the current spreading layer 90 may be the same as the thickness of the current blocking layer 70.

The current blocking layer 70 including the central area 71 and the peripheral area 72 surrounding the central area 71 is designed, so that the current crowding benefit is improved and the current is expanded; on the other hand, the adhesiveness of the electrode is increased, and the stability of the electrode is improved.

It should be understood that the above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to these embodiments, and any changes made according to the present invention are all included in the protection scope of the present invention.

Claims (12)

1. A semiconductor light emitting element includes a substrate, a first type conductivity semiconductor layer, a second type conductivity semiconductor layer, and a light emitting layer therebetween; a first electrode electrically connected to the first type conductivity semiconductor layer, and a second electrode electrically connected to the second type conductivity semiconductor layer; a current blocking layer is arranged between the first type conductivity semiconductor layer and the first electrode;

the method is characterized in that: the current blocking layer includes a central region and a peripheral region surrounding the central region, and the first electrode covers the central region and a part of the peripheral region.

2. A semiconductor light emitting element according to claim 1, wherein: the central region may or may not be connected to the peripheral region.

3. A semiconductor light emitting element according to claim 1, wherein: the peripheral region includes a plurality of sub-regions.

4. A semiconductor light emitting element according to claim 3, wherein: the sub-regions may or may not be connected.

5. A semiconductor light emitting element according to claim 3, wherein: the shape of the sub-regions may be the same or different.

6. A semiconductor light emitting element according to claim 3, wherein: the areas of the sub-regions are the same or different.

7. A semiconductor light emitting element according to claim 3, wherein: the projection of the sub-region is circular, fan-shaped or trapezoidal.

8. A semiconductor light emitting element according to claim 3, wherein: the sub-regions are evenly distributed.

9. A semiconductor light emitting element according to claim 1, wherein: and a current spreading layer is arranged between the current blocking layer and the first electrode.

10. A semiconductor light emitting element according to claim 9, wherein: the current spreading layer covers the current blocking layer and the surface of the first type conductivity semiconductor layer.

11. A semiconductor light emitting element according to claim 9, wherein: the current spreading layer covers a surface of the first-type conductivity semiconductor layer, and does not cover a surface of the current blocking layer.

12. A semiconductor light emitting element according to claim 9, wherein: the surface of the current expansion layer is flush with the surface of the current blocking layer.