CN210073905U - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN210073905U CN210073905U CN201921323564.3U CN201921323564U CN210073905U CN 210073905 U CN210073905 U CN 210073905U CN 201921323564 U CN201921323564 U CN 201921323564U CN 210073905 U CN210073905 U CN 210073905U
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- current blocking
- blocking layer
- emitting diode
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- 230000004888 barrier function Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims description 96
- 230000007480 spreading Effects 0.000 claims description 55
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 4
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The utility model belongs to the semiconductor field especially relates to a light emitting diode, including the substrate, range upon range of epitaxial layer above the substrate and with epitaxial layer electric connection's P electrode and N electrode, its characterized in that: the current barrier layer is provided with a plurality of barrier parts distributed at intervals, and the barrier parts of the current barrier layers on two sides of each current expansion layer are arranged in a staggered mode. The utility model discloses a current barrier layer and the current expansion layer of the stop part that has interval distribution are range upon range of in turn, can expand the electric current, improve the crowded phenomenon of electric current.
Description
Technical Field
The utility model belongs to the semiconductor field especially relates to a light emitting diode with current barrier layer and current expansion layer range upon range of in turn, and wherein current barrier layer has a plurality of interval distribution's stop part, can promote the current expansion, improves the crowded phenomenon of electric current.
Background
A Light Emitting Diode (LED) is a semiconductor Light Emitting element, which is manufactured by using a semiconductor PN junction injection type electroluminescence principle. The LED has the advantages of low energy consumption, small volume, long service life, good stability, fast response, stable light-emitting wavelength and other good photoelectric properties, and has good application in the fields of illumination, household appliances, display screens, indicator lamps and the like at present.
In the prior art, the light emitting diode includes a substrate, an epitaxial layer and an P, N electrode, when a current is injected from a P electrode of the light emitting diode, the current easily selects the shortest path to flow to an N electrode, so that the current density below the P electrode is high, and the current crowding phenomenon is generated.
Disclosure of Invention
For improving the crowded phenomenon of electric current, the utility model provides a light emitting diode, including the substrate, range upon range of epitaxial layer on the substrate and with epitaxial layer electric connection's P electrode and N electrode, its characterized in that: the LED is characterized by further comprising a plurality of current blocking layers and current expanding layers which are arranged alternately, wherein the current blocking layers are provided with a plurality of blocking parts which are distributed at intervals, the blocking parts of the current blocking layers on two sides of each current expanding layer are arranged in a staggered mode, and current is injected into the LED through gaps between the adjacent blocking parts.
Preferably, the current spreading layer extends into a gap between adjacent barrier portions of the current blocking layer.
Preferably, the current blocking layer includes a first current blocking layer and a second current blocking layer, the current spreading layer includes a first current spreading layer and a second current spreading layer, the first current spreading layer is sandwiched between the first current blocking layer and the second current blocking layer, and the second current spreading layer is located between the second current blocking layer and the P electrode.
Preferably, the epitaxial layer further comprises a third current blocking layer and a third current spreading layer which are positioned between the epitaxial layer and the first current blocking layer, and the third current spreading layer is sandwiched between the third current blocking layer and the first current blocking layer.
Preferably, the first current blocking layer, the second current blocking layer, and the third current blocking layer have the same or different blocking portions.
Preferably, the barrier portions of the first, second and third current blocking layers are the same or different in size.
Preferably, the second current blocking layer has a size corresponding to a barrier below the P electrode that is larger than a size of a barrier below the non-P electrode.
Preferably, the second current blocking layer has a size corresponding to a blocking portion under the P electrode that is larger than a size of the P electrode.
Preferably, the first current spreading layer, the second current spreading layer and the third current spreading layer are the same or different.
Preferably, the first current blocking layer, the second current blocking layer and the third current blocking layer are selected from one or a combination of silicon dioxide layers, silicon nitride layers or silicon carbide layers.
Preferably, the first current spreading layer, the second current spreading layer and the third current spreading layer are selected from one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer and a fluorine-doped tin oxide layer.
The utility model discloses set up a plurality of alternate arrangement's current barrier layer and electric current extension layer between epitaxial layer and P electrode to current barrier layer has a plurality of interval distribution's stop part, each the current barrier layer's of electric current extension layer both sides stop part staggered arrangement, and in the light emitting diode was injected into in the electric current through the space between the adjacent stop part, this project organization can change the flow direction of electric current, promoted the electric current extension, improved the crowded phenomenon of electric current.
Drawings
Fig. 1 is a schematic top view of a light emitting diode according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view taken along line A-A' of FIG. 1.
Fig. 3 is an enlarged schematic view of a dashed box in fig. 2.
Fig. 4 is a schematic cross-sectional view of a light emitting diode according to a second embodiment of the present invention.
Detailed Description
The structure of the light emitting diode of the present invention will be described in detail with reference to the schematic drawings, and before further describing the present invention, it is to be understood that the present invention is not limited to the specific embodiments described below, since modifications can be made to the specific embodiments. It is also to be understood that the embodiments are presented by way of illustration, not of limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
Example 1
Referring to fig. 1 and 2, a light emitting diode includes a substrate 10, an epitaxial layer 20 stacked on the substrate 10, and a P electrode 51 and an N electrode 52 electrically connected to the epitaxial layer 20.
Wherein the material of the substrate 10 is selected from Al2O3One of SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MnO, and any combination thereof. The epitaxial growth substrate 10 of the present embodiment is illustrated by taking a sapphire substrate 10 (sapphire substrate) as an example, and the lattice orientation is (0001), but the present invention is not limited to the material and lattice orientation of the substrate 10 used. The substrate 10 can be patterned to change the propagation path of light, thereby improving the light extraction efficiency of the light emitting device.
The epitaxial layer 20 includes an N-type semiconductor layer, a P-type semiconductor layer, and a light emitting layer therebetween. The P-type semiconductor layer or the N-type semiconductor layer is doped N-type or P-type, respectively, and the N-type is doped with an N-type dopant such as Si, Ge, or Sn. The p-type is doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, without excluding other element equivalent substitution dopings. The P-type semiconductor layer or the N-type semiconductor layer may be a gallium nitride-based, gallium arsenide-based, or gallium phosphide-based material. The light-emitting layer is made of a material capable of providing light radiation, the specific radiation waveband is 390-950 nm, such as blue, green, red, yellow, orange and infrared light, and the light-emitting layer can be a single quantum well or a multi-quantum well.
The P-electrode 51 includes a pad portion 511 and a branch portion 512, and the branch portion 512 is used for current spreading. The P electrode 51 and the N electrode 52 may be located on the same side of the substrate 10, or may be located on different sides of the substrate 10, and the contrast of the present invention is not particularly limited.
A plurality of current blocking layers 30 and current spreading layers 40 which are alternately arranged are arranged between the P electrode 51 and the epitaxial layer 20, the current blocking layers 30 are provided with a plurality of blocking parts which are distributed at intervals, the blocking parts of the current blocking layers 30 at two sides of each current spreading layer 40 are arranged in a staggered mode, and current is injected into the light emitting diode through a gap between the adjacent blocking parts. Wherein the current spreading layer 40 extends into the gap between adjacent barrier portions of the current blocking layer 30 for current spreading.
The number of layers of the current blocking layer 30 and the current spreading layer 40 is not particularly limited. In the present embodiment, the current blocking layer 30 is two layers, and accordingly, the current spreading layer 40 is also two layers. Specifically, the current blocking layer 30 includes a first current blocking layer 31 and a second current blocking layer 32, the current spreading layer 40 includes a first current spreading layer 41 and a second current spreading layer 42, the first current spreading layer 41 is sandwiched between the first current blocking layer 31 and the second current blocking layer 32, the second current spreading layer 42 is located between the second current blocking layer 32 and the P-electrode 51, and the blocking portion of the first current blocking layer 31 and the blocking portion of the second current blocking layer 32 are arranged in a staggered manner.
The barrier portion of the first current blocking layer 31 and the barrier portion of the second current blocking layer 32 may be the same or different in material, size, and thickness. The material of the barrier portion may be selected from one or a combination of several of silicon dioxide, silicon nitride and silicon carbide, and silicon dioxide is preferred in this embodiment.
The first current spreading layer 41 and the second current spreading layer 42 may be made of the same or different materials, and have the same or different thicknesses, and the first current spreading layer 41 and the second current spreading layer 42 are both selected from one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium tin oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, or a fluorine-doped tin oxide layer, and in this embodiment, an indium tin oxide layer is preferred.
In order to improve the blocking effect of the second current blocking layer 32 on the current collected under the P electrode 51, the second current blocking layer 32 has a size corresponding to the blocking portion under the P electrode 51 larger than that of the P electrode 51. At this time, the barrier portion located below the non-P electrode 51 may be the same size as the barrier portion located below the P electrode 51, but in order to improve the current spreading effect, the present invention is designed such that the barrier portion corresponding to the P electrode 51 below is larger in size than the barrier portion located below the non-P electrode 51.
Referring to fig. 3, when the led injects current from the P electrode 51, the current flows through the following paths: the current enters the second current spreading layer 42 to be spread, then enters the gap between the adjacent barrier portions of the second current barrier layer 32 to be spread, enters the first current spreading layer 41 to be spread, and then enters the gap between the adjacent barrier portions of the first current barrier layer 31 to be spread. Since the barrier portions of the first current blocking layer 31 and the barrier portions of the second current blocking layer 32 are arranged in a staggered manner, the current can change the path by the barrier of the barrier portions, and the next material layer is formed in the gap between adjacent barrier portions, so that the current is expanded and prevented from being gathered under the P-electrode 51 to form a current crowding phenomenon.
Example 2
Referring to fig. 4, the present embodiment is different from embodiment 1 in that: a third current blocking layer 33 and a third current spreading layer 43 are further disposed between the epitaxial layer 20 and the first current blocking layer 3,1, the third current spreading layer 43 is sandwiched between the third current blocking layer 33 and the first current blocking layer 31, and the third current blocking layer 33 has a plurality of blocking portions distributed at intervals. The barrier portions of the third current blocking layer 33 are arranged to be misaligned with the barrier portions of the first current blocking layer 31, and the barrier portions of the first current blocking layer 31 are arranged to be misaligned with the barrier portions of the second current blocking layer 32.
The barrier materials, dimensions, and thicknesses of the first current barrier layer 31, the second current barrier layer 32, and the third current barrier layer 33 may be the same or different. The material of the barrier portion may be selected from one or a combination of several of silicon dioxide, silicon nitride and silicon carbide, and silicon dioxide is preferred in this embodiment.
The first current spreading layer 41, the second current spreading layer 42 and the third current spreading layer 43 may be made of the same or different materials, and the thicknesses thereof may be the same or different, and the first current spreading layer 41, the second current spreading layer 42 and the third current spreading layer 43 are all selected from one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer or a fluorine-doped tin oxide layer, and in this embodiment, an indium tin oxide layer is preferred.
When the current is injected from the P-electrode 51, the current flows through the following paths: the current enters the second current spreading layer 42 to be spread, then enters the gap between the adjacent barrier parts of the second current barrier layer 32 to be spread, enters the first current spreading layer 41 to be spread, then enters the gap between the adjacent barrier parts of the first current barrier layer 31 to be spread, enters the third current spreading layer 43 to be spread, and finally enters the gap between the adjacent barrier parts of the third current barrier layer 31 to be spread.
Since the barrier portions of the first current blocking layer 31, the second current blocking layer 32 and the third current blocking layer 33 are arranged in a staggered manner, the current can change the path by the barrier portions, and the next material layer is formed in the gap between the adjacent barrier portions, so that the current is expanded and prevented from being gathered under the P-electrode 51 to form a current crowding phenomenon.
It should be understood that the above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to these embodiments, and any changes made according to the present invention are all included in the protection scope of the present invention.
Claims (11)
1. A light emitting diode comprises a substrate, an epitaxial layer stacked on the substrate, and a P electrode and an N electrode which are electrically connected with the epitaxial layer, and is characterized in that: the LED is characterized by further comprising a plurality of current blocking layers and current expanding layers which are arranged alternately, wherein the current blocking layers are provided with a plurality of blocking parts which are distributed at intervals, the blocking parts of the current blocking layers on two sides of each current expanding layer are arranged in a staggered mode, and current is injected into the LED through gaps between the adjacent blocking parts.
2. A light emitting diode according to claim 1 wherein: the current spreading layer extends into a void between adjacent barrier portions of the current blocking layer.
3. A light emitting diode according to claim 1 wherein: the current blocking layer comprises a first current blocking layer and a second current blocking layer, the current spreading layer comprises a first current spreading layer and a second current spreading layer, the first current spreading layer is sandwiched between the first current blocking layer and the second current blocking layer, and the second current spreading layer is located between the second current blocking layer and the P electrode.
4. A light emitting diode according to claim 3 wherein: the epitaxial layer is positioned between the epitaxial layer and the first current blocking layer, and the third current spreading layer is clamped between the third current blocking layer and the first current blocking layer.
5. The light-emitting diode according to claim 4, wherein: the barrier portions of the first current blocking layer, the second current blocking layer and the third current blocking layer are the same or different.
6. The light-emitting diode according to claim 4, wherein: the sizes of the barrier portions of the first current blocking layer, the second current blocking layer and the third current blocking layer are the same or different.
7. A light emitting diode according to claim 3 or 4, wherein: the second current blocking layer has a larger size corresponding to the barrier portion under the P electrode than the barrier portion under the non-P electrode.
8. A light emitting diode according to claim 3 or 4, wherein: the size of the second current blocking layer corresponding to the blocking part below the P electrode is larger than that of the P electrode.
9. The light-emitting diode according to claim 4, wherein: the first, second and third current spreading layers are the same or different.
10. The light-emitting diode according to claim 4, wherein: the first current blocking layer, the second current blocking layer and the third current blocking layer are all selected from one or a combination of a plurality of silicon dioxide layers, silicon nitride layers or silicon carbide layers.
11. The light-emitting diode according to claim 4, wherein: the first current spreading layer, the second current spreading layer and the third current spreading layer are all selected from one or a combination of several of an indium tin oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer or a fluorine-doped tin oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921323564.3U CN210073905U (en) | 2019-08-15 | 2019-08-15 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921323564.3U CN210073905U (en) | 2019-08-15 | 2019-08-15 | Light-emitting diode |
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| Publication Number | Publication Date |
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| CN210073905U true CN210073905U (en) | 2020-02-14 |
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| CN201921323564.3U Active CN210073905U (en) | 2019-08-15 | 2019-08-15 | Light-emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525009A (en) * | 2020-04-27 | 2020-08-11 | 开发晶照明（厦门）有限公司 | Semiconductor light emitting device |
-
2019
- 2019-08-15 CN CN201921323564.3U patent/CN210073905U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525009A (en) * | 2020-04-27 | 2020-08-11 | 开发晶照明（厦门）有限公司 | Semiconductor light emitting device |
| CN111525009B (en) * | 2020-04-27 | 2022-02-22 | 开发晶照明（厦门）有限公司 | Semiconductor light emitting device |
| US11600745B2 (en) | 2020-04-27 | 2023-03-07 | Kaistar Lighting (Xiamen) Co., Ltd. | Semiconductor light-emitting device |
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