KR102008349B1 - Light emitting device and light emitting device package - Google Patents

Abstract

The light emitting device includes a first light emitting layer for generating first light in a first wavelength band, a first conductive semiconductor layer disposed under the light emitting layer, a second conductive semiconductor layer disposed over the light emitting layer, and a second conductive type. And a second light emitting layer disposed on the semiconductor layer and generating second light having a second wavelength band using the first light.

Description

Light emitting device and light emitting device package

An embodiment relates to a light emitting device.

Embodiments relate to a light emitting device package.

Research into light emitting device packages having light emitting devices is being actively conducted.

The light emitting device is, for example, a semiconductor light emitting device or a semiconductor light emitting diode which is formed of a semiconductor material and converts electrical energy into light.

The light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, many researches are being conducted to replace the existing light source with a semiconductor light emitting device.

BACKGROUND ART Light emitting devices have been increasingly used as light sources for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors.

The embodiment provides a light emitting element that does not need to form a phosphor.

The embodiment provides a foot and a device with a simple structure.

The embodiment provides a light emitting device capable of reducing manufacturing costs.

The embodiment provides a light emitting device capable of obtaining a high color rendering index (CRI).

An embodiment provides a light emitting device package including a light emitting device.

An embodiment includes a first conductive semiconductor layer; A first light emitting layer on the first conductive semiconductor layer; A second conductive semiconductor layer disposed on the first light emitting layer; A second light emitting layer disposed on the second conductive semiconductor layer and including first to third wavelength conversion layers stacked in order; A plurality of first holes penetrating the second wavelength conversion layer and the third wavelength conversion layer; And a plurality of second holes penetrating through the third wavelength conversion layer, wherein the diameter of the first hole through which the top surface of the first wavelength conversion layer is exposed is the second surface through which the top surface of the second wavelength conversion layer is exposed. It may include a light emitting device larger than the diameter of the hole.
According to an embodiment, the plurality of first holes may be formed at regular intervals from each other, and the plurality of second holes may include light emitting devices formed at regular intervals from each other.
In an embodiment, a first roughness structure is formed on an upper surface of the first wavelength conversion layer exposed in the first hole, and a second roughness structure is formed on an upper surface of the second wavelength conversion layer exposed in the second hole. It may include a light emitting device to be formed.
In an embodiment, the first roughness structure is formed on inner surfaces of the second wavelength conversion layer and the third wavelength conversion layer exposed by the first hole, and the third wavelength exposed by the second hole. An inner surface of the conversion layer may include a light emitting device in which the second roughness structure is formed.
In an embodiment, the inner side surface of the first hole includes a first sloped surface, the inner side surface of the second hole includes a second sloped surface, and the first hole has the third wavelength conversion on an upper surface of the first wavelength conversion layer. The diameter increases toward the top surface of the layer, and the second hole may include a light emitting device having a diameter increasing toward the top surface of the third wavelength conversion layer from the top surface of the second wavelength conversion layer.

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In the embodiment, when the light emitting structure is grown, the wavelength conversion layer may also be grown, and thus, there is no need to separately form a phosphor, thereby simplifying the process, simplifying the structure, and reducing manufacturing cost.

According to the embodiment, the wavelength conversion layer is formed of a compound semiconductor material that is resistant to heat so that the wavelength conversion layer is not deformed to generate light having a desired wavelength band, and thus the color rendering index may be improved.

The embodiment forms a hole or a roughness structure in the wavelength conversion layer, thereby improving light extraction efficiency.

1 is a cross-sectional view showing a light emitting device according to the first embodiment.
FIG. 2 is a diagram illustrating a first and second light generation in the light emitting device of FIG. 1.
3 is a cross-sectional view illustrating a light emitting device according to a second embodiment.
FIG. 4 is a diagram illustrating the first to fourth light generation in the light emitting device of FIG. 3.
5 is a cross-sectional view illustrating a light emitting device according to a third embodiment.
FIG. 6 is a plan view illustrating the invention device of FIG. 5.
7 is a sectional view showing a light emitting device according to the fourth embodiment.
8 is a cross-sectional view illustrating a light emitting device according to a fifth embodiment.
9 is a cross-sectional view showing a light emitting device according to a sixth embodiment.
10 is a plan view illustrating a light emitting device according to a seventh embodiment.
FIG. 11 is a cross-sectional view of the light emitting device of FIG. 10 taken along line II ′. FIG.
12 is a sectional view showing a light emitting device according to the eighth embodiment.
13 is a sectional view showing a light emitting device according to the ninth embodiment.
14 is a cross-sectional view illustrating a light emitting device according to a tenth embodiment.
15 is a sectional view showing a light emitting device according to the eleventh embodiment.
16 is a cross-sectional view showing a light emitting device according to a twelfth embodiment.
17 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

In the description of the embodiment according to the invention, in the case where it is described as being formed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) is the two components are mutually It includes both direct contact or one or more other components disposed between and formed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

In the following embodiments, the same reference numerals are assigned to the same components, and further descriptions of the above-described features or contents will be omitted in order to avoid duplication of description.

1 is a cross-sectional view showing a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device according to the first embodiment may include the substrate 11, the light emitting structure 15, and the wavelength conversion layer 23, but the embodiment is not limited thereto.

Referring to FIG. 1, the light emitting device 10 according to the first embodiment may further include a buffer layer 13 disposed between the substrate 11 and the light emitting structure 15, but is not limited thereto. . The buffer layer 13 may serve to alleviate the lattice constant difference between the substrate 11 and the light emitting structure 15. The lattice constant of the buffer layer 13 may be between the lattice constant of the substrate 11 and the lattice constant of the light emitting structure 15, but is not limited thereto. Since the difference in lattice constant between the substrate 11 and the light emitting structure 15 is alleviated by the lattice constant, the light emitting structure 15 may be stably grown without defects. Therefore, the light emitting device 10 according to the first embodiment may have improved electrical and optical characteristics.

The substrate 11 may grow the light emitting structure 15 and support the light emitting structure 15, and may be formed of a material suitable for growth of a semiconductor material. The substrate 11 may be formed of a material having a similar lattice constant and thermal stability to the light emitting structure 15, and may be a conductive substrate or an insulating substrate. The substrate 11 may be formed of at least one selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, and Ge.

The light emitting structure 15 may include a plurality of compound semiconductor layers. For example, the light emitting structure 15 may include, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

For example, the emission layer 19 may be disposed on the first conductivity type semiconductor layer 17, and the second conductivity type semiconductor layer 21 may be disposed on the emission layer 19.

The first conductive semiconductor layer 17 may be in contact with the substrate 11 or the buffer layer 13, but is not limited thereto.

The second conductivity type semiconductor layer 21 may be in contact with the wavelength conversion layer 23, but is not limited thereto.

Although not shown, a third semiconductor layer may be disposed between one of the substrate 11 and the buffer layer 13 and the first conductive semiconductor layer 17, but is not limited thereto.

The third semiconductor layer may or may not include a dopant. The third semiconductor layer may include a dopant having the same polarity as that of the first conductive semiconductor layer 17 or may include a dopant having an opposite polarity, but is not limited thereto.

Although not shown, a fourth semiconductor layer may be disposed between the second conductivity type semiconductor layer 21 and the wavelength conversion layer 23, but the embodiment is not limited thereto.

The fourth semiconductor layer may or may not include a dopant. The fourth semiconductor layer may include a dopant having the same polarity as that of the first conductive semiconductor layer 17 or may include a dopant having an opposite polarity, but is not limited thereto.

The buffer layer 13, the first conductive semiconductor layer 17, the light emitting layer 19, the second conductive semiconductor layer 21, the third and fourth semiconductor layers, and the wavelength conversion layer 23. Silver may be formed of a II-VI or III-V compound semiconductor material. For example, the buffer layer 13, the first conductive semiconductor layer 17, the light emitting layer 19, the second conductive semiconductor layer 21, the third and fourth semiconductor layers, and the wavelength conversion layer ( 23) may include, but is not limited to, at least one selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, GaAs, AlGaAs, GaAsP GaP, InP, GaInP, and AlGaInP.

The first and second conductivity-type semiconductor layers 17 and 21 may be formed of a compound semiconductor material of Al _x In _y Ga _(1-xy) N, but are not limited thereto.

For example, the first conductivity type semiconductor layer 17 may be an n type semiconductor layer including an n type dopant, and the second conductivity type semiconductor layer 21 may be a p type semiconductor layer, but is not limited thereto. The n-type dopant includes Si, Ge, Sn and the like, and the p-type dopant includes Mg, Zn, Ca, Sr, Ba and the like, but is not limited thereto.

The emission layer 19 has a first carrier, for example, electrons injected through the first conductivity-type semiconductor layer 17, and a second carrier, for example, holes injected through the second conductivity-type semiconductor layer 21, coupled to each other. The light emitting device may emit light having a wavelength band corresponding to an energy band gap according to the material of the emission layer 19.

In other words, the light emitting layer 19 performs electroluminescence (EL) for converting electrical signals supplied to the first conductive semiconductor layer 17 and the second conductive semiconductor layer 21 into light. can do.

Although not shown, an electrode may be formed in each of the first and second semiconductor layers to supply an electrical signal to the first and second conductivity-type semiconductor layers 17 and 21, but embodiments are not limited thereto.

The emission layer 19 may include any one of a multi-quantum well structure (MQW), a quantum dot structure, or a quantum line structure. In the light emitting layer 19, the well layer and the barrier layer may be repeatedly formed with the well layer and the barrier layer as a cycle. Since the repetition period of the well layer and the barrier layer can be modified according to the characteristics of the light emitting device, the present invention is not limited thereto.

The light emitting layer 19 may be formed by, for example, a period of GaN / InGaN, GaN / AlGaN, or a period of AlGaN / AlGaN. The band gap of the barrier layer may be larger than the band gap of the well layer.

The light emitting layer 19 may generate light having a short wavelength band of 450 nm or less, for example, but is not limited thereto.

For example, the light emitting layer 19 may generate purple light or ultraviolet light, but is not limited thereto.

The wavelength conversion layer 23 may be disposed on the second conductivity type semiconductor layer 21. Accordingly, the emission layer 19 may be disposed under the second conductivity type semiconductor layer 21, and the wavelength conversion layer 23 may be disposed on the second conductivity type semiconductor layer 21.

Like the emission layer 19, the wavelength conversion layer 23 may be formed of a II-VI or III-V compound semiconductor material.

The wavelength conversion layer 23 may include any one of a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure. In the wavelength conversion layer 23, the well layer and the barrier layer may be repeatedly formed by using the well layer and the barrier layer as one cycle. Since the repetition period of the well layer and the barrier layer can be modified according to the characteristics of the light emitting device, the present invention is not limited thereto.

Since the wavelength conversion layer 23 does not have any semiconductor layer to which an electrical signal is applied, the wavelength conversion layer 23 cannot perform electroluminescence.

As illustrated in FIG. 2, the wavelength conversion layer 23 may generate light (called second light) obtained by converting light (called first light) generated in the emission layer 19 to a specific wavelength. have.

The energy bandgap Eg1 of the emission layer 19 may be larger than the energy bandgap Eg2 of the wavelength conversion layer 23, but is not limited thereto. In this case, the wavelength conversion layer 23 may generate second light having a second wavelength band that is at least larger than the first wavelength band generated by the emission layer 19, but is not limited thereto.

For example, the wavelength conversion layer 23 may be formed of light of a blue wavelength band, light of a cyan wavelength band, light of a green wavelength band, using the first light of the first wavelength band generated by the light emitting layer 19. A second light of one of the light of the orange wavelength band, the light of the magenta wavelength band, and the light of the red wavelength band may be generated, but is not limited thereto.

The wavelength conversion layer 23 may include a multiple quantum well structure (MQW) having a GaN / InGaN period to generate light in the blue wavelength band, light in the green wavelength band, and light in the cyan wavelength band. This is not limitative. The wavelength conversion layer 23 may include a multi-quantum well structure having an AlGaInP / GaInP period to generate light of the orange wavelength band and light of the pink wavelength band, but is not limited thereto. The wavelength conversion layer 23 may include a multi-quantum well structure having an AlGaAs / GaAsP period to generate light in the red wavelength band, but is not limited thereto.

The wavelength conversion layer 23 may perform optical emission (PL) that generates a second light from the first light.

The wavelength conversion layer 23 may not generate light by itself, and may generate second light using the first light. In order for the wavelength conversion layer 23 to generate the second light, the first light is required. In other words, the first light may be an excitation light source for generating the second light.

The energy bandgap Eg2 of the wavelength conversion layer 23 is greater than the wavelength band of the first light of the emission layer 19 so that the first light of the emission layer 19 passes through the wavelength conversion layer 23. However, this is not limitative.

If the first light of the light emitting layer 19 does not want to pass through the wavelength converting layer 23, the energy band gap Eg2 of the wavelength converting layer 23 is the wavelength of the first light of the light emitting layer 19. It can be smaller than the band.

Meanwhile, both the light emitting layer 19 and the wavelength conversion layer 23 may generate light having a wavelength band corresponding to visible light. In this case, the wavelength band of the first light generated in the light emitting layer 19 may be smaller than the wavelength band of the second light generated in the wavelength changing layer, but is not limited thereto. The second light may be generated from the first light.

For example, the first light is light in the blue wavelength band, the second light is light in the green wavelength band, light in the red wavelength band, light in the orange wavelength band, light in the cyan wavelength band, and pink (magenta). One of the light in the wavelength band can be generated, but not limited thereto.

According to the first embodiment, white color light may be obtained by mixing the first light generated in the emission layer 19 and the second light generated in the wavelength conversion layer 23, but the present invention is limited thereto. I never do that.

In addition, the buffer layer 13, the first conductive semiconductor layer 17, the light emitting layer 19, the second conductive semiconductor layer 21, the third and fourth semiconductor layers, and the wavelength conversion layer ( 23 may be grown in a batch using an epitaxial apparatus. For example, the growth apparatus may include metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), molecular beam growth (MBE), and molecular beam epitaxy (MBE). , Hydride Vapor Phase Epitaxy (HVPE) can be formed using a method such as, but is not limited thereto.

According to the first embodiment, when the light emitting structure 15 grows, the wavelength conversion layer 23 may also grow together, so that it is not necessary to form a phosphor separately, so that the process is simple, the structure is simple, and the manufacturing cost can be reduced. .

Existing phosphors may be deformed by heat generated by the light emitting device. When the phosphors are deformed in this way, the color rendering index may be lowered because the phosphors may not generate light of a desired wavelength band.

However, according to the first embodiment, since the wavelength conversion layer 23 is formed of a compound semiconductor material that is resistant to heat, the wavelength conversion layer 23 is not deformed, so that light having a desired wavelength band can be generated. Can be improved.

3 is a cross-sectional view illustrating a light emitting device according to a second embodiment.

The second embodiment is almost similar to the first embodiment except for the wavelength conversion layers 25a, 25b, and 25c.

The light emitting device 10A according to the second embodiment may include, but is not limited to, a substrate 11, a buffer layer 13, a light emitting structure 15, and two or more wavelength conversion layers 25a, 25b, and 25c. Do not.

The light emitting structure 15 includes, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

For example, the light emitting device 10A according to the second embodiment may include, but is not limited to, the first to third wavelength conversion layers 25a, 25b, and 25c.

Since the first to third wavelength conversion layers 25a, 25b, and 25c also generate second to fourth light, the first to third wavelength conversion layers 25a, 25b, and 25c may be called light emitting layers, but the present invention is not limited thereto.

The first wavelength conversion layer 25a is disposed on the second conductivity type semiconductor layer 21, and the second wavelength conversion layer 25b is disposed on the first wavelength conversion layer 25a. The third wavelength conversion layer 25c may be disposed on the second wavelength conversion layer 25b.

As shown in FIG. 4, the light emitting layer 19 generates first light having a first wavelength band, and the first to third wavelength conversion layers 25a, 25b, and 25c use the first light. Although it is possible to generate the second to fourth light in the second to fourth wavelength bands, the present invention is not limited thereto.

The emission layer 19 may have a first energy band gap Eg1 capable of generating first light having a first wavelength band. The first wavelength conversion layer 25a may generate a second energy bandgap Eg2 capable of generating second light of a second wavelength band. The second wavelength conversion layer 25b may generate a third energy band gap Eg3 capable of generating third light of a third wavelength band. The third wavelength conversion layer 25c may generate a fourth energy bandgap Eg4 capable of generating fourth light of a fourth wavelength band.

For example, the first light generated in the light emitting layer 19 is ultraviolet light or purple light, and the second light generated in the first wavelength converting layer 25a is light of a blue wavelength band, and the second wavelength converting layer The third light generated at 25b is light of the green wavelength band, and the fourth light generated from the third wavelength conversion layer 25c may be light of the red wavelength band, but is not limited thereto.

The second energy bandgap Eg2 of the first wavelength conversion layer 25a is greater than the first energy bandgap Eg1 of the emission layer 19, and the second energy bandgap Eg1 of the second wavelength conversion layer 25b is formed. The third energy bandgap Eg3 may be greater than the second energy bandgap Eg2 of the first wavelength conversion layer 25a. The fourth energy bandgap Eg4 of the third wavelength conversion layer 25c may be larger than the third energy bandgap Eg3 of the second wavelength conversion layer 25b.

The second to fourth light may be generated using the first light.

In order for the first light generated in the emission layer 19 to be supplied to the second and third wavelength conversion layers 25b and 25c, the first light must pass through the first wavelength conversion layer 25a. To this end, the second energy bandgap Eg2 of the first wavelength conversion layer 25a may be larger than the first wavelength band of the first light, but is not limited thereto.

Similarly, in order for the first light generated in the emission layer 19 to be supplied to the third wavelength conversion layer 25c, the first light must pass through the second wavelength conversion layer 25b. To this end, the third energy bandgap Eg3 of the second wavelength conversion layer 25b may be larger than the first wavelength band of the first light, but is not limited thereto.

Depending on whether the first light is ultraviolet light or visible light, the first light may or may not transmit through the third wavelength conversion layer 25c.

For example, when the first light is used to implement white light as visible light, the first light must pass through the third wavelength conversion layer 25c. In this case, the fourth energy bandgap Eg4 of the third wavelength conversion layer 25c may be larger than the first wavelength band of the first light, but is not limited thereto.

For example, when the first light is not used to implement white light as ultraviolet light, the first light does not have to pass through the third wavelength conversion layer 25c. In this case, the fourth energy bandgap Eg4 of the third wavelength conversion layer 25c may be smaller than the first wavelength band of the first light, but is not limited thereto.

Alternatively, the first light may pass through the third wavelength conversion layer 25c even though the first light is ultraviolet light not used to implement white light. In this case, the fourth energy bandgap Eg4 of the third wavelength conversion layer 25c may be larger than the first wavelength band of the first light, but is not limited thereto.

According to the second embodiment, as the energy band gaps Eg2 to Eg4 of the first to third wavelength conversion layers 25a, 25b, and 25c have a structure that is gradually reduced, the first generated in the emission layer 19 is formed. One light may be supplied to the third wavelength conversion layer 25c without loss.

Nevertheless, when the energy band gaps Eg2 to Eg4 of the first to third wavelength conversion layers 25a, 25b and 25c are larger than the first wavelength band of the first light generated in the emission layer 19, the first The order of arrangement of the third to third wavelength conversion layers 25a, 25b, and 25c can be changed. For example, a third wavelength conversion layer 25c is disposed on the second conductivity type semiconductor layer 21, and a first wavelength conversion layer 25a is disposed on the third wavelength conversion layer 25c. Although the second wavelength conversion layer 25b may be disposed on the first wavelength conversion layer 25a, the present invention is not limited thereto.

For example, when light of the blue wavelength band is generated in the emission layer 19, only two wavelength conversion layers of the first to third wavelength conversion layers 25a, 25b, and 25c may be provided. In this case, one of the first to third wavelength conversion layers 25a, 25b, and 25c generates light of a green wavelength band, and the first to third wavelength conversion layers 25a, 25b, and 25c are generated. ), The other wavelength conversion layer may generate light of a red wavelength band. Thus, white light can be obtained by mixing light of the blue wavelength band, light of the green wavelength band, and light of the red wavelength band.

Meanwhile, in order for the second light generated by the first wavelength conversion layer 25a to pass through the second and third wavelength conversion layers 25b and 25c and be emitted to the outside, the second and third wavelength conversion layers Each of the energy bandgaps Eg3 and Eg4 of 25b and 25c may be larger than the second wavelength band of the second light, but is not limited thereto.

The energy bandgap (Eg4) of the third wavelength conversion layer 25c so that the third light generated in the second wavelength conversion layer 25b is transmitted through the third wavelength conversion layer 25c and emitted to the outside. May be larger than the third wavelength band of the third light, but is not limited thereto.

The emission layer 19 and the first to third wavelength conversion layers 25a, 25b, and 25c may have the same thickness or different thicknesses.

The thickness of each of the emission layer 19 and the first to third wavelength conversion layers 25a, 25b, and 25c may vary depending on the color, but is not limited thereto.

Each of the emission layer 19 and the first to third wavelength conversion layers 25a, 25b, and 25c may include one of a multi-quantum well structure (MQW), a quantum dot structure, or a quantum line structure. Each of the light emitting layer 19 and the first to third wavelength conversion layers 25a, 25b, and 25c may have a well layer and a barrier layer repeatedly formed with one well layer and a barrier layer as a cycle. Since the repetition period of the well layer and the barrier layer can be modified according to the characteristics of the light emitting device, the present invention is not limited thereto.

The thickness of the well layer may be 3 nm to 20 nm or less, and the thickness of the barrier layer may be 3 nm to 20 nm or less, but is not limited thereto. The thickness of the well layer may be smaller than the thickness of the barrier layer, but is not limited thereto.

The first and second embodiments may generate white light using the light emitting layer 19 and at least one wavelength converting layer 23, 25a, 25b, or 25c, but not limited thereto. You may.

5 is a cross-sectional view illustrating a light emitting device according to a third embodiment.

The third embodiment is almost similar to the second embodiment except for the plurality of first and second holes 27 and 29.

Referring to FIG. 5, the light emitting device 10B according to the third exemplary embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, two or more wavelength conversion layers 25a, 25b, and 25c and a plurality of light emitting elements. It may include, but is not limited to, the first and second holes 27 and 29.

The light emitting structure 15 includes, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

The first hole 27 may be formed to partially expose the top surface of the first wavelength conversion layer 25a. The second hole 29 may be formed to partially expose the top surface of the second wavelength conversion layer 25b.

The third wavelength conversion layer 25c and the second wavelength conversion layer 25b are removed to form the first hole 27, and the third wavelength conversion layer 25c is removed to remove the second hole ( 29) can be formed.

The first hole 27 is formed through the third wavelength conversion layer 25c and the second wavelength conversion layer 25b, and the second hole 29 is the third wavelength conversion layer 25c. It can be formed through.

As illustrated in FIG. 6, a plurality of first holes 27 or a plurality of second holes 29 may be formed adjacent to the first holes 27. A plurality of first holes 27 or a plurality of second holes 29 may be formed adjacent to the second holes 29.

The plurality of first holes 27 may be formed at regular intervals from each other or at random intervals from each other. The plurality of second holes 29 may be formed at regular intervals from each other or at random intervals from each other. The first and second holes 27 and 29 may be formed at regular intervals from each other or at random intervals from each other.

Each of the first and second holes 27 and 29 may be formed in a circle, an ellipse, a triangle, a rectangle, a polygon, a starfish, or the like when viewed from above.

The first and second holes 27 and 29 may have the same diameter or different diameters. The first and second holes 27 and 29 may have random diameters.

The second light generated in the first wavelength converting layer 25a is emitted to the outside via the second and third wavelength converting layers 25b and 25c, whereas the second light is generated in the second wavelength converting layer 25b. The third light may be emitted to the outside via the third wavelength conversion layer 25c. Therefore, it may be more difficult for the second light generated by the first wavelength conversion layer 25a to be emitted to the outside than the third light generated by the second wavelength conversion layer 25b. In this case, the amount of light of the second light may be less than the amount of light of the third light, so that the desired color light may not be obtained by mixing the second to fourth lights.

In order to solve this problem, the diameter of the first hole 27 exposing the top surface of the first wavelength conversion layer 25a is increased by the second hole 29 exposing the top surface of the second wavelength conversion layer 25b. It may be formed to be larger than the diameter of. Therefore, the second light is extracted to the outside through the first hole 27 to the outside, and the desired color light can be obtained by maintaining the light amounts of the second to fourth light uniformly, and the color rendering index can be improved. have.

7 is a sectional view showing a light emitting device according to the fourth embodiment.

The fourth embodiment is almost similar to the third embodiment except that first and second roughness structures 31 and 33 are formed in the first and second holes 27 and 29, respectively. .

Referring to FIG. 7, the light emitting device 10C according to the fourth embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, two or more wavelength conversion layers 25a, 25b, 25c, and a plurality of light emitting elements. It may include, but is not limited to, the first and second holes 27 and 29.

A first roughness structure 31 is formed on an upper surface of the first wavelength conversion layer 25a exposed in the first hole 27, and the second wavelength conversion layer exposed in the second hole 29. The second roughness structure 33 may be formed on the upper surface of 25b, but is not limited thereto.

The second light of the first wavelength conversion layer 25a and the third light of the second wavelength conversion layer 25b may be more easily extracted by the first and second roughness structures 31 and 33. Can be.

Although not shown, an inner surface of the second and third wavelength conversion layers 25b and 25c in the first hole 27 or an inner surface of the third wavelength conversion layer 25c in the second hole 29 are illustrated. Roughness structure may be formed, but the present invention is not limited thereto.

8 is a cross-sectional view illustrating a light emitting device according to a fifth embodiment.

The fifth embodiment is almost similar to the third embodiment except that the inner surfaces of the first and second holes 27 and 29 have the inclined surface 35.

Referring to FIG. 8, the light emitting device 10D according to the fifth embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, two or more wavelength conversion layers 25a, 25b, and 25c and a plurality of materials. It may include, but is not limited to, the first and second holes 27 and 29.

The inner side surface of the first hole 27 may have a first inclined surface 35. The first inclined surface 35 may be formed on an inner surface of the second wavelength conversion layer 25b and an inner surface of the third wavelength conversion layer 25c. The first inclined surface 35 may be formed to be inclined with respect to the top surface of the first wavelength conversion layer 25a.

The inner side surface of the second hole 29 may have a second inclined surface 36. The second inclined surface 36 may be formed on an inner side surface of the third wavelength conversion layer 25c. The second inclined surface 36 may be formed to be inclined with respect to the top surface of the second wavelength conversion layer 25b.

Accordingly, the first hole 27 may have a structure in which the diameter of the first hole 27 becomes larger from the top surface of the first wavelength conversion layer 25a. The second hole 29 may have a structure in which the diameter of the second hole 29 increases from the upper surface of the second wavelength conversion layer 25b.

The diameter of the upper side of the first hole 27 may be larger than the diameter of the upper side of the second hole 29, but is not limited thereto.

Since the inner surfaces of the first and second holes 27 and 29 are inclined, the second and third light extracted into the first and second holes 27 and 29 may be formed in the first and second holes ( 27, 29) can be further diffused and released to the outside. Thus, light can be emitted from the light emitting element according to the fifth embodiment at a much wider emission angle.

9 is a cross-sectional view showing a light emitting device according to a sixth embodiment.

The sixth embodiment is almost similar to the fourth embodiment except that the third roughness structure 41 is formed on the third wavelength conversion layer 25c.

Referring to FIG. 9, the light emitting device 10E according to the sixth embodiment may include a substrate 11, a buffer fill, a light emitting structure 15, two or more wavelength conversion layers 25a, 25b, and 25c and a plurality of first and second light emitting devices 10E. The second holes 27 and 29 may be included, but are not limited thereto.

A first roughness structure 37 is formed on an upper surface of the first wavelength conversion layer 25a exposed in the first hole 27, and the second wavelength conversion layer 25b exposed in the second hole 29. The second roughness structure 39 may be formed on the upper surface of the), but is not limited thereto.

In addition, a third roughness structure 41 may be formed on the third wavelength conversion layer 25c. After forming the first and second holes 27 and 29, an etching process may be performed on the entire region of the third wavelength conversion layer 25c. By the etching process, a first roughness structure 37 is formed in the first hole 27, a second roughness structure 39 is formed in the second hole 29, and the third wavelength conversion is performed. The third roughness structure 41 may be formed on the layer 25c.

Thus, the second light of the first wavelength conversion layer 25a, the third light and the third wavelength conversion of the second wavelength conversion layer 25b by the first to third roughness structures 37, 39, 41. The fourth light of the layer 25c can be extracted more easily.

FIG. 10 is a plan view illustrating a light emitting device according to a seventh embodiment, and FIG. 11 is a cross-sectional view taken along the line II ′ of the light emitting device of FIG. 10.

The seventh embodiment is almost similar to the first embodiment except for the first and second electrodes 43 and 45.

The first and second electrodes 43 and 45 of the seventh embodiment may be similarly applied to the second to sixth embodiments, but the embodiment is not limited thereto.

10 and 11, the light emitting device 10F according to the seventh embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23. It does not limit about.

The light emitting device 10F according to the seventh exemplary embodiment may include, but is not limited to, a first groove 42 formed in the first edge region and a second groove 44 formed in the second edge region. Do not.

Although FIG. 10 illustrates that each of the first and second grooves 42 and 44 is formed one by one, a plurality of first grooves 42 and a plurality of second grooves 44 may be formed, but are not limited thereto. Do not.

In the first groove 42, the wavelength conversion layer 23, the second conductive semiconductor layer 21, and the light emitting layer 19 are partially removed to expose a portion of the first conductive semiconductor layer 17. It may be formed to.

The second groove 44 may be formed so that the wavelength conversion layer 23 is partially removed to expose a portion of the second conductive semiconductor layer 21.

A first electrode 43 is formed on the first conductive semiconductor layer 17 of the first groove 42, and on the second conductive semiconductor layer 21 of the second groove 44. The second electrode 45 may be formed.

The first and second electrodes 43 and 45 may be conductive materials having excellent electrical conductivity. The first and second electrodes 43 and 45 may be formed of a reflective material having excellent reflection characteristics. The first and second electrodes 43 and 45 may have a multilayer structure including an ohmic contact layer, a barrier layer, and a bonding layer, but are not limited thereto. The ohmic contact layer may be formed of a material having excellent ohmic contact characteristics with the first conductive semiconductor layer 17 or the second conductive semiconductor layer 21. The barrier layer may be formed by diffusing a material of the first or second conductivity type semiconductor layer 21 into the bonding layer or spreading a material of the bonding layer into the first or second conductivity type semiconductor layers 17 and 21. This can be prevented. The bonding layer may be formed of a material having excellent bonding characteristics with a wire when wire bonding in a light emitting device package.

The first and second electrodes 43 and 45 may include, for example, one or a stack thereof, selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu, and Mo, but are not limited thereto. I never do that.

Although not shown, a current blocking layer may be disposed to prevent current from being concentrated under each of the first and second electrodes 43 and 45. The current blocking layer may be formed of a nitride-based or oxide-based insulating material or a material having a lower electrical conductivity or higher resistance than the first and second electrodes 43 and 45, but is not limited thereto.

The first electrode 43 may be spaced apart from the light emitting layer 19 to prevent electrical short with the light emitting layer 19. In addition, an upper surface of the first electrode 43 may be disposed at a position lower than a rear surface of the emission layer 19.

The first light generated by the emission layer 19 may be reflected by the side surface of the first electrode 43.

When the second electrode 45 is formed of a reflective material having excellent reflection characteristics, the upper surface of the second electrode 45 is disposed at a position higher than the upper surface of the wavelength conversion layer 23 in order to increase the possibility of reflecting light. However, the present invention is not limited thereto. The second light generated by the wavelength conversion layer 23 may be reflected by the side surface of the second electrode 45.

12 is a sectional view showing a light emitting device according to the eighth embodiment.

The eighth embodiment is almost similar to the seventh embodiment except for the third and fourth conductive semiconductor layers 47 and 49 having the function of current spreading.

The third and fourth conductive semiconductor layers 47 and 49 of the eighth embodiment may be similarly applied to the second to sixth embodiments, but the embodiment is not limited thereto.

Referring to FIG. 12, the light emitting device 10G according to the eighth embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23, but is not limited thereto. Do not.

The light emitting structure 15 may include, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

The first conductivity type semiconductor layer 17 may be disposed on the buffer layer 13, and the second conductivity type semiconductor layer 21 may be disposed on the emission layer 19, but is not limited thereto.

The first and second conductivity-type semiconductor layers 17 and 21 may include dopants to generate carriers, holes, and electrons. For example, the first conductivity type semiconductor layer 17 may include an n-type dopant, and the second conductivity type semiconductor layer 21 may include a p-type dopant, but is not limited thereto.

The third conductive semiconductor layer 47 may be disposed between the buffer layer 13 and the first conductive semiconductor layer 17. The third conductive semiconductor layer 47 may include a dopant having a concentration at least greater than that of the dopant of the first conductive semiconductor layer 17 in order to minimize resistance and have a current spreading function. The dopant of the third conductive semiconductor layer 47 may have the same polarity or different polarity as the dopant of the first conductive semiconductor layer 17.

Since the resistance of the third conductive semiconductor layer 47 becomes smaller than that of the first conductive semiconductor layer 17, the current supplied to the first electrode 43 is immediately transmitted to the first conductive semiconductor layer 17. After spreading to the entire region of the third conductivity-type semiconductor layer 47 without flowing to the first conductivity-type semiconductor layer 17. As a result, a uniform current I may flow to the entire area of the first conductivity-type semiconductor layer 17.

The fourth conductive semiconductor layer 49 may be disposed between the second conductive semiconductor layer 21 and the wavelength conversion layer 23. The fourth conductive semiconductor layer 49 may include a dopant having a concentration at least greater than that of the dopant of the second conductive semiconductor layer 21 in order to minimize resistance and have a current spreading function. The dopant of the fourth conductive semiconductor layer 49 may have the same polarity or different polarities as the dopant of the second conductive semiconductor layer 21.

Since the resistance of the fourth conductive semiconductor layer 49 is smaller than the resistance of the second conductive semiconductor layer 21, the current supplied to the second electrode 45 is immediately transmitted to the second conductive semiconductor layer 21. After spreading to the entire area of the fourth conductivity-type semiconductor layer 49 without flowing to the second conductivity-type semiconductor layer 21. As a result, a uniform current I may flow to the entire region of the second conductivity-type semiconductor layer 21.

The second electrode 45 may be disposed on the fourth conductive semiconductor layer 49.

13 is a sectional view showing a light emitting device according to the ninth embodiment.

The ninth embodiment is almost similar to the eighth embodiment except for the fifth semiconductor layer 53.

Referring to FIG. 13, the light emitting device 10H according to the ninth embodiment may include, but is not limited to, a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23. Do not.

The light emitting structure 15 may include, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

A third conductive semiconductor layer 47 is disposed between the buffer layer 13 and the first conductive semiconductor layer 17, and between the second conductive semiconductor layer 21 and the wavelength conversion layer 23. The fourth conductive semiconductor layer 51 may be disposed.

Each of the third and fourth conductive semiconductor layers 47 and 51 may have a dopant concentration greater than that of the first and second conductive semiconductor layers 17 and 21 to have a current spreading function.

In addition, a fifth semiconductor layer 53 may be disposed under the fourth conductive semiconductor layer 51. In other words, the fifth semiconductor layer 53 may be disposed between the second conductive semiconductor layer 21 and the fourth conductive semiconductor layer 51, but is not limited thereto.

The fifth semiconductor layer 53 may serve to prevent current from flowing into the second conductive semiconductor layer 21 before being spread to all regions of the fourth conductive semiconductor layer 51.

The fifth semiconductor layer 53 may have a resistance larger than that of the fourth conductive semiconductor layer 51. The fifth semiconductor layer 53 may or may not include a dopant.

The dopant of the fifth semiconductor layer 53 may have the same polarity as one or both of the second and fourth conductive semiconductor layers 47 and 51, but is not limited thereto.

For example, the second conductive semiconductor layer 21 may include a p-type dopant, the fifth semiconductor layer 53 may not include a dopant, and the fourth conductive semiconductor layer 51 may include an n-type dopant. It may include.

For example, the second conductive semiconductor layer 21 may include a p-type dopant, the fifth semiconductor layer 53 may include a p-type dopant, and the fourth conductive semiconductor layer 51 may be an n-type dopant. It may include.

For example, the second conductivity-type semiconductor layer 21 may include a p-type dopant, the fifth semiconductor layer 53 may include an n-type dopant, and the fourth conductivity-type semiconductor layer 51 may be an n-type dopant. It may include.

The dopant concentration of the fifth semiconductor layer 53 may be less than the dopant concentration of at least one of the second and fourth conductivity-type semiconductor layers 47 and 51, but is not limited thereto.

In this way, the resistance of the fifth semiconductor layer 53 is made larger than that of the fourth conductivity-type semiconductor layer 51, so that current does not flow directly into the second conductivity-type semiconductor layer 21, but the fourth conductivity-type. It may be spread to the entire region of the semiconductor layer 51.

When the resistance of the fifth semiconductor layer 53 is increased, current spreading to the entire area of the fourth conductivity-type semiconductor layer 51 does not easily flow to the second conductivity-type semiconductor layer 21. This problem may minimize the thickness of the fifth semiconductor layer 53 so that current may easily flow to the second conductivity-type semiconductor layer 21 by using a tunneling effect.

For example, the thickness of the fifth semiconductor layer 53 may be 3 nm to 8 nm, but is not limited thereto.

The second electrode 45 may be disposed on the fourth conductive semiconductor layer 51.

14 is a cross-sectional view illustrating a light emitting device according to a tenth embodiment.

The tenth embodiment is almost similar to the eighth embodiment except that the electrode layer 55 is formed instead of the fourth conductivity type semiconductor layer (see FIGS. 12 and 13).

The electrode layer 55 of the tenth embodiment may be similarly applied to the second to sixth embodiments, but is not limited thereto.

Referring to FIG. 14, the light emitting device 10I according to the tenth embodiment may include, but is not limited to, a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23. Do not.

The light emitting structure 15 may include, but is not limited to, a first conductive semiconductor layer 17, a light emitting layer 19, and a second conductive semiconductor layer 21.

The first conductivity type semiconductor layer 17 may be disposed on the buffer layer 13, and the second conductivity type semiconductor layer 21 may be disposed on the emission layer 19, but is not limited thereto.

A third conductive semiconductor layer 47 may be disposed between the buffer layer 13 and the first conductive semiconductor layer 17.

In addition, an electrode layer 55 may be disposed between the second conductivity-type semiconductor layer 21 and the wavelength conversion layer 23.

The wavelength conversion layer 23 may be disposed on the first region of the electrode layer 55, and the second electrode 45 may be disposed on the second region of the electrode layer 55.

The electrode layer 55 may include a transparent conductive material. The electrode layer 55 may be formed of a material having excellent ohmic characteristics and excellent current spreading characteristics with the second conductivity-type semiconductor layer 21. The electrode layer 55 includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx It may include, but is not limited to, at least one selected from the group consisting of / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO.

15 is a sectional view showing a light emitting device according to the eleventh embodiment.

The eleventh embodiment is almost similar to the first embodiment except for the first and second electrode units.

The first and second electrode units of the eleventh embodiment may be similarly applied to the second to sixth embodiments, but the embodiment is not limited thereto.

Referring to FIG. 15, the light emitting device 10J according to the eleventh embodiment may include a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23, but embodiments of the present disclosure are not limited thereto. Do not.

The light emitting structure 15 may include a first conductive semiconductor layer 17 disposed on the buffer layer 13, a light emitting layer 19 disposed on the first conductive semiconductor layer 17, and the light emitting layer 19. It may include a second conductivity-type semiconductor layer 21 disposed on.

The first electrode unit may be disposed on one side of the light emitting device, and the second electrode unit may be disposed on the other side of the light emitting device.

The first and second electrode units may include, but are not limited to, one or a stack thereof selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu, and Mo, for example.

If the wavelength conversion layer 23 does not include a dopant, the wavelength conversion layer 23 may be an optical emission instead of an electrical emission, and thus the second electrode unit may have partial regions on the side and top surfaces of the wavelength conversion layer 23. It may be disposed on, but is not limited thereto. By forming the second electrode unit even on the upper surface of the wavelength conversion layer 23, the adhesive force of the second electrode unit may be strengthened to prevent peel off.

The first electrode unit extends from the first electrode 43 and the first electrode 43 disposed on one side of the first conductive semiconductor layer 17 to a partial region of the rear surface of the substrate 11. It may include a first connection electrode 57 to be. The first connection electrode 57 may extend to the rear surface of the substrate 11 via the side surface of the buffer layer 13 and the side surface of the substrate 11.

The second electrode unit extends from the second electrode 45 and the second electrode 45 disposed on one side of the second conductive semiconductor layer 21 to a partial region of the rear surface of the substrate 11. The second connection electrode 59 may be included. The second connection electrode 59 may extend to the rear surface of the substrate 11 via a side surface of the light emitting layer 19, a side surface of the first conductive semiconductor layer 17, and a side surface of the substrate 11. Can be.

The first and second connection electrodes 57 and 59 may be spaced apart from each other on the rear surface of the substrate 11.

For example, the first and second connection electrodes 57 and 59 may be formed in a line shape in order to minimize interference of emission of light, but the present invention is not limited thereto.

The first and second electrodes 43 and 45 may be formed of a metal material, and the first and second connection electrodes 57 and 59 may be formed of ITO and the same as the electrode layer 55 (see FIG. 14) of the tenth embodiment. It may be formed of the same transparent conductive material, but is not limited thereto.

Alternatively, the first and second electrodes 43 and 45 and the first and second connection electrodes 57 and 59 may include a transparent electrode layer such as ITO and a metal layer having a very thin thickness to allow light to pass therethrough. Although it may be, it is not limited to this. The metal layer may have a thickness of several nm to transmit light. The transparent electrode layer may serve to support the metal layer, and the metal layer may serve to supply electricity, but is not limited thereto.

In order to prevent the first and second electrode units from contacting the light emitting layer 19 or the substrate 11, between the first and second electrode units and the light emitting layer 19, and between the first and second electrode units. An insulating layer 61 may be disposed between the buffer layer 13 and between the first and second electrode units and the substrate 11, but is not limited thereto.

If the substrate 11 is formed of sapphire having excellent insulation property, the insulating layer 61 may be disposed on the side of the light emitting layer 19 and the side of the buffer layer 13 except for the substrate 11. have.

The insulating layer 61 is formed on all regions of side surfaces of the light emitting structure 15, that is, the first conductive semiconductor layer 17, the light emitting layer 19, and the second conductive semiconductor layer 21 or the first conductive semiconductor layer 21. And may be formed to correspond to the second electrode unit, but is not limited thereto.

If the insulating layer 61 is formed in all regions of the side surface of the light emitting structure 15, the first and second electrode units penetrate the insulating layer 61 to form the first and second conductivity types. It may be electrically connected to the side surfaces of the semiconductor layers 17 and 21.

According to the eleventh embodiment, since the first and second electrode units are disposed under the substrate 11, when manufacturing the light emitting device package, the first and second electrode units are the first and second electrode layers of the light emitting device package. Because it is directly connected to the wire, no separate wire bonding process is required, which simplifies the manufacturing process and prevents light efficiency from being reduced due to the wire.

According to the eleventh embodiment, since the first and second electrode units are disposed under the substrate 11, the light efficiency is minimized due to the minimization of light loss compared to the structure in which the first and second electrodes are disposed on the light emitting device. This can be improved.

16 is a cross-sectional view showing a light emitting device according to a twelfth embodiment.

The twelfth embodiment is almost similar to the eleventh embodiment except that the first and second electrode units are disposed through the light emitting structure 15.

Referring to FIG. 16, the light emitting device 10K according to the twelfth embodiment may include, but is not limited to, a substrate 11, a buffer layer 13, a light emitting structure 15, and a wavelength conversion layer 23. Do not.

The first and second electrode units may be disposed through the substrate 11 and the light emitting structure 15.

For example, the first electrode unit may be disposed to contact the first conductivity-type semiconductor layer 17 through the substrate 11 and the buffer layer 13. The first electrode unit may be in contact with a portion of the second conductivity-type semiconductor layer 21. In this case, since the upper surface and some side surfaces of the first electrode unit are in contact with the second conductivity-type semiconductor layer 21, the current supply may be smoother. The first electrode unit may penetrate the first conductive semiconductor layer 17 in a range of 0% to 90% of the thickness of the first conductive semiconductor layer 17.

If the first electrode unit penetrates 90% or more of the first conductivity type semiconductor layer 17, an electrical short may occur between the light emitting layer 19 and the first conductivity type semiconductor layer 17. There may be.

When the first electrode unit penetrates through 0% of the first conductive semiconductor layer 17, the first electrode unit is in contact with the rear surface of the first conductive semiconductor layer 17. The semiconductor layer 17 may mean not penetrating at all.

The first electrode unit penetrates the substrate 11 and the buffer layer 13 from the first electrode 63 and the first electrode 63 disposed on a region of the rear surface of the substrate 11. The first connection electrode 57 may be in contact with the first conductive semiconductor layer 17.

The second electrode unit includes the substrate 11, the buffer layer 13, and the first electrode from the second electrode 65 and the second electrode 65 disposed on the other region of the rear surface of the substrate 11. A second connection electrode 59 penetrating the conductive semiconductor layer 17 and the light emitting layer 19 to be in contact with the second conductive semiconductor layer 21 may be included.

Since the first and second electrode units must be insulated from the light emitting layer 19, the insulating layer 71 is formed on an inner surface of the through hole through which the first and second electrode units pass, and the first and second electrode units are disposed thereon. This can be formed.

17 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

Referring to FIG. 17, the light emitting device package according to the embodiment may include a body 101, a first lead electrode 103 and a second lead electrode 105 installed on the body 101, and the body 101. A light emitting device 10 according to the first and second embodiments, which is installed and supplied with power from the first lead electrode 103 and the second lead electrode 105, and surrounds the light emitting device 10. It includes a molding member 113.

The body 101 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 10.

The first lead electrode 103 and the second lead electrode 105 are electrically separated from each other, and provide power to the light emitting device 10.

In addition, the first and second lead electrodes 103 and 105 may reflect light generated by the light emitting device 10 to increase light efficiency, and heat generated by the light emitting device 10 to the outside. It can also play a role.

The light emitting device 10 may be installed on any one of the first lead electrode 103, the second lead electrode 105, and the body 101. It may be electrically connected to the second lead electrodes 103 and 105, but is not limited thereto.

In the embodiment, it is illustrated that the light emitting device 10 is electrically connected to one of the first and second lead electrodes 103 and 105 through one wire 109, but is not limited thereto. The light emitting device 10 may be electrically connected to the first and second lead electrodes 103 and 15 using two wires, and the light emitting device 10 may be connected to the first and second leads without using a wire. It may be electrically connected to the electrodes 103 and 105.

The molding member 113 may surround the light emitting device 10 to protect the light emitting device 10. In addition, the molding member 113 may include a phosphor to change the wavelength of light emitted from the light emitting device 10.

The light emitting device package 200 according to the embodiment includes a chip on board (COB) type, the upper surface of the body 101 is flat, the plurality of light emitting devices 10 may be installed on the body 101. have.

The light emitting device 10 or the light emitting device package according to the embodiment may be applied to the light unit. The light unit may be applied to a unit such as a display device and a lighting device, for example, a lighting lamp, a traffic light, a vehicle headlight, an electric sign, an indicator lamp.

10, 10A, 10B, 10C, 10D, 10E: light emitting element
11: substrate
13: buffer layer
15: light emitting structure
17: first conductive semiconductor layer
19: light emitting layer
21: second conductivity type semiconductor layer
23, 25a, 25b, 25c: wavelength conversion layer
27, 29: hall
31, 33, 37, 39, 41: Roughness structure
35: slope
42, 44: groove
43, 45, 63, 65: electrode
47: third conductive semiconductor layer
49, 51: fourth conductive semiconductor layer
53: fifth semiconductor layer
55: electrode layer
57, 59, 67, 69: connection electrode
61, 71: insulation layer

Claims (25)

A light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer disposed on the first conductive layer and on the first conductive semiconductor layer;
A first wavelength conversion layer covering an upper surface of the light emitting structure;
A second wavelength conversion layer covering an upper surface of the first wavelength conversion layer;
A third wavelength conversion layer covering an upper surface of the second wavelength conversion layer;
A plurality of first holes passing through the second wavelength conversion layer and the third wavelength conversion layer to expose an upper surface of the first wavelength conversion layer; And
A plurality of second holes penetrating the third wavelength conversion layer and exposing an upper surface of the second wavelength conversion layer;
The diameter of the first hole is larger than the diameter of the second hole. The method of claim 1,
The plurality of first holes are formed at regular intervals from each other,
The plurality of second holes are formed at regular intervals from each other. The method of claim 1,
A first roughness structure is formed on an upper surface of the first wavelength conversion layer exposed in the first hole,
And a second roughness structure formed on an upper surface of the second wavelength conversion layer exposed in the second hole. The method of claim 3,
The first roughness structure is formed on inner surfaces of the second wavelength conversion layer and the third wavelength conversion layer exposed by the first hole,
And a second roughness structure formed on an inner surface of the third wavelength conversion layer exposed by the second hole. The method of claim 1,
The inner side surface of the first hole includes a first sloped surface,
The inner side surface of the second hole includes a second sloped surface,
The first hole has a diameter that increases from an upper surface of the first wavelength conversion layer to an upper surface of the third wavelength conversion layer.
The second hole is a light emitting device of which the diameter increases from the upper surface of the second wavelength conversion layer to the upper surface of the third wavelength conversion layer.

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