CN209708983U - 高正向阻断电压门极灵敏触发单向可控硅芯片 - Google Patents
高正向阻断电压门极灵敏触发单向可控硅芯片 Download PDFInfo
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- CN209708983U CN209708983U CN201920615765.4U CN201920615765U CN209708983U CN 209708983 U CN209708983 U CN 209708983U CN 201920615765 U CN201920615765 U CN 201920615765U CN 209708983 U CN209708983 U CN 209708983U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 230000000903 blocking effect Effects 0.000 title claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 31
- 230000009849 deactivation Effects 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 239000004411 aluminium Substances 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- 238000001259 photo etching Methods 0.000 abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 5
- 239000011574 phosphorus Substances 0.000 abstract description 5
- 241001673391 Entandrophragma candollei Species 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 239000002585 base Substances 0.000 description 38
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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CN201920615765.4U CN209708983U (zh) | 2019-04-30 | 2019-04-30 | 高正向阻断电压门极灵敏触发单向可控硅芯片 |
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CN201920615765.4U CN209708983U (zh) | 2019-04-30 | 2019-04-30 | 高正向阻断电压门极灵敏触发单向可控硅芯片 |
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CN209708983U true CN209708983U (zh) | 2019-11-29 |
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CN201920615765.4U Withdrawn - After Issue CN209708983U (zh) | 2019-04-30 | 2019-04-30 | 高正向阻断电压门极灵敏触发单向可控硅芯片 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110061052A (zh) * | 2019-04-30 | 2019-07-26 | 江苏捷捷微电子股份有限公司 | 高正向阻断电压门极灵敏触发单向可控硅芯片和制造方法 |
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2019
- 2019-04-30 CN CN201920615765.4U patent/CN209708983U/zh not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110061052A (zh) * | 2019-04-30 | 2019-07-26 | 江苏捷捷微电子股份有限公司 | 高正向阻断电压门极灵敏触发单向可控硅芯片和制造方法 |
CN110061052B (zh) * | 2019-04-30 | 2024-02-02 | 江苏捷捷微电子股份有限公司 | 高正向阻断电压门极灵敏触发单向可控硅芯片和制造方法 |
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Address after: No.3000 Qiantangjiang Road, Qidong Economic Development Zone, Nantong City, Jiangsu Province Patentee after: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. Address before: 226200, No. 8, Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Patentee before: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. |
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AV01 | Patent right actively abandoned | ||
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Granted publication date: 20191129 Effective date of abandoning: 20240202 |
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AV01 | Patent right actively abandoned |
Granted publication date: 20191129 Effective date of abandoning: 20240202 |