CN209659701U - Semiconductor based on graphene optimizes conductive structure - Google Patents
Semiconductor based on graphene optimizes conductive structure Download PDFInfo
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- CN209659701U CN209659701U CN201821758834.9U CN201821758834U CN209659701U CN 209659701 U CN209659701 U CN 209659701U CN 201821758834 U CN201821758834 U CN 201821758834U CN 209659701 U CN209659701 U CN 209659701U
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Abstract
A kind of semiconductor based on graphene optimizes conductive structure, comprising: the metal heat sink with individual graphene platelet, in which: individual graphene platelet respectively with metal heat sink and the heat-conducting plate face contact being set on semiconductor；Individual graphene platelet is single layer structure, the double-deck doubled-over configuration or multilayer doubled-over configuration.The utility model by will individual graphene platelet fold after be set between semiconductor heat source and metal heat sink and respectively therewith face contact to realize optimization heat dissipation.The utility model can give full play to the advantages that graphene is up to the thermal conductivity and high thermal diffusivity of 1500-1700w/mk, can reduce rapidly hot spot (heat accumulation point) temperature, realize the heat dissipation of semiconductor circuit.
Description
Technical field
The utility model relates to a kind of technology in semiconductor heat-dissipating field, specifically a kind of partly leading based on graphene
Body optimizes conductive structure.
Background technique
Existing power amplifier is to realize high efficiency and heat radiation, generally uses contact radiator, and in heat source and radiator
Between fill heat-conducting glue.But the heat-conducting glue service life is shorter, can do and can tail off as the time has been grown, so that gap reappears, cause
Heat dissipation performance decline；The stronger material of heating conduction then often non-conductive (insulation), will affect the radio-frequency performance of power amplifier；And it leads
The thermal conductivity of hot glue itself is unable to satisfy the thermal conductance demand between each material.
Utility model content
The utility model In view of the above shortcomings of the prior art, proposes that a kind of semiconductor optimization based on graphene is led
Heat structure can give full play to the advantages that graphene is up to the thermal conductivity and high thermal diffusivity of 1500-1700w/mk, can be rapid
Hot spot (heat accumulation point) temperature is reduced, realizes the heat dissipation of semiconductor circuit.
The utility model is achieved through the following technical solutions:
The utility model relates to a kind of, and the semiconductor based on graphene optimizes conductive structure, comprising: has individual graphene
The metal heat sink of thin slice, in which: individual graphene platelet respectively with metal heat sink and be set to thermally conductive on semiconductor
Plate face contact；
Individual described graphene platelet is single layer structure, the double-deck doubled-over configuration or multilayer doubled-over configuration.
The double-deck doubled-over configuration is the doubled-over configuration of C font, and doubling opening is located at the edge of semiconductor.
Gasket and/or heat-conducting plate are equipped in the double-deck doubled-over configuration.
The left and right sides of the gasket is equipped with circular arc chamfering to prevent graphene to be broken.
The utility model optimizes conductive structure further to a kind of semiconductor based on graphene, comprising: is divided into two
Terminal circuit plate and power tube, the graphene platelet being set between circuit board and power tube and metal heat sink cladding gasket with
And the metal heat sink under gasket.
The middle part of the graphene platelet is equipped with opening and the opening is located at circuit board and power tube boundary.
The left and right sides of the gasket is equipped with circular arc chamfering to prevent graphene to be broken.
When use two pieces with Upper gasket when, the upper surface of gasket is the complete plane that individual graphene platelet is constituted.
Detailed description of the invention
Fig. 1 replaces heat-conducting glue (whole plane heat dissipation) schematic diagram by 1 single-layer graphene of embodiment；
Fig. 2 is the direct doubling of 2 graphene of embodiment (whole plane heat dissipation) schematic diagram；
Fig. 3 is that 3 graphene of embodiment wraps up lower gasket schematic diagram；
Fig. 4 is that 4 graphene of embodiment wraps up left gasket and right gasket schematic diagram respectively；
In figure: circuit board 1, heat-conducting plate 2, individual graphene platelet 3, metal heat sink 4, power tube 5, gasket 6, heat-conducting glue
7。
Specific embodiment
Embodiment 1
As shown in Figure 1, to replace the heat-conducting glue between metal heat-conducting plate and metal heat sink using grapheme material.From upper
To it is lower be power tube 5 and circuit board 1, heat-conducting plate 2, individual graphene platelet 3, metal heat sink 4 respectively, in which: 5 He of power tube
Circuit board 1 is welded on the heat-conducting plate 2 of metal, and heat-conducting plate 2 is connected by individual graphene platelet 3 with metal heat sink 4, it is therefore an objective to
Want to allow the heat of circuit board and power tube, by metal heat-conducting plate, then by graphene, then arrives metal heat sink, finally by
It is air-cooled that the heat of aluminium radiator fin is discharged in air.
Compared with prior art, which can conduct as early as possible the heat of power tube using the thermal conduction characteristic of graphene
And it is rapidly diffused into the surface of entire copper, and further spread out by metal heat sink.Therefore heat product can be reduced
Accumulation more effectively reduces the temperature of power tube.However because when heat extends through lower surface from the upper surface of grapheme material, stone
The thermal conductivity of black alkene only has 3~5w/mk, and there is no sufficiently played and utilized the advantage of graphene.
Embodiment 2
As shown in Fig. 2, the present embodiment is by being directly sandwiched in heat-conducting plate 2 and heat dissipation metal for individual 3 doubling of graphene platelet
Between device 4, allow the lower surface of heat-conducting plate 2 and the upper surface of metal heat sink 4 touched is individual graphene platelet 3 in fact
The same face, heat does not need individual graphene platelet 3 of " penetrating " full wafer, but spreads in the same plane, therefore such changes
Good figure design is convenient and fast, can preferably be radiated using graphene whole face high heat conductance (1500~1700w/mk) to realize
Method.
The present embodiment advantage is to significantly improve heat dissipation effect by simply adjusting.
Embodiment 3
As shown in figure 3, original heat-conducting plate 2 is divided into two layers by the present embodiment, circuit board 1 and power tube 5 are welded on thermally conductive
On plate 2；The edge designs of one layer of heat-conducting plate 2 are at circular arc type below, gasket 6 be completely wrapped in folded double-layer structure individual
Graphene platelet 3, the lower section of gasket 6 is metal heat sink 4, so that the same face of graphene touches heat-conducting plate 2
The upper surface of lower surface and metal heat sink 4.Heat is directly to be diffused into heat-conducting plate 2 from circuit board 1 and power tube 5, then pass
Onto the upper surface of individual graphene platelet 3 and horizontal extension (whole face) to the upper surface of metal heat sink 4.
The present embodiment can make full use of the whole face high heat conductance of graphene, while 6 radiused edges of gasket can also be protected
It does not fracture because of pressure.
In practical applications, gasket 6 can use any material, including but not limited to metal simple-substance, alloy, timber or plastics
Etc..It only needs to provide certain thickness and arc-shaped curved surface guarantees that graphene is not broken because of folding, set to play
The effect that heat in meter is spread in the same plane of graphene.
The heat-conducting plate 2 is in order to conduct and weld power tube 5, it is preferred to use metal material is to guarantee conductive and heat-conductive, institute
Be with copper it is preferred, in addition to this, using aluminium copper facing or nickel plating be also can be alternative scheme.
Embodiment 4
As shown in figure 4, for some circuit boards 1 and power tube 5 because design and performance, cannot directly be welded in and lead
On hot plate 2, therefore circuit board 1 and power tube 5 and metal are set to by the gasket 6 that graphene platelet 3 coats in the present embodiment
Between radiator 4, circuit board 1 and power tube 5 are divided into both ends.
Specifically, the middle part of the graphene platelet 3 is equipped with opening and the opening is located at circuit board 1 and power tube 5 divides
At boundary.
The left and right sides of the gasket 6 is preferably provided with circular arc chamfering to prevent graphene to be broken.
When use two pieces with Upper gasket 6 when, the upper surface of gasket 6 is linked to be complete plane by the laying of individual graphene platelet 3.
Heat directly passes on metal heat sink 4 from circuit board 1 and power tube 5 by graphene in the present embodiment.
It is in the arc-shaped for providing certain thickness and arc-shaped curved surface guarantor that the gasket 6 only needs outermost to process
Card graphene is not broken because of folding, so that the heat played the role of in design is spread in the same plane of graphene.
Apparatus above is by practical heat dissipation comparison, and to the same heat source (power board), the temperature difference of the two is up to 14 DEG C.From
And it confirmed the design scheme to the practicability of graphene used.
In conclusion the utility model is by the use to new material graphene, and the improvement to traditional structure, energy
The advantages that graphene is up to the thermal conductivity and high thermal diffusivity of 1500-1700w/mk is given full play to, hot spot can be reduced rapidly
(heat accumulation point) temperature in time spreads heat and is transmitted to big cooling fin, and is finally realized using cooling fin to power amplification
The heat dissipation of circuit board 1 and power tube 5 in device.Graphene also has conductive good, light weight simultaneously, easily cuts, wear-resisting durable etc.
Advantage has broad application prospects.
Above-mentioned specific implementation can by those skilled in the art under the premise of without departing substantially from the utility model principle and objective with
Different modes carries out local directed complete set to it, and the protection scope of the utility model is subject to claims and not by above-mentioned specific
Implementation is limited, and each implementation within its scope is by the constraint of the utility model.
Claims (8)
1. a kind of semiconductor based on graphene optimizes conductive structure characterized by comprising with individual graphene platelet
Metal heat sink, in which: individual graphene platelet connects with metal heat sink and the thermally conductive plate face being set on semiconductor respectively
Touching；
Individual described graphene platelet is single layer structure, the double-deck doubled-over configuration or multilayer doubled-over configuration.
2. the semiconductor according to claim 1 based on graphene optimizes conductive structure, characterized in that the bilayer is right
Folded structure is the doubled-over configuration of C font, and doubling opening is located at the edge of semiconductor.
3. the semiconductor according to claim 1 based on graphene optimizes conductive structure, characterized in that the bilayer is right
Gasket and/or heat-conducting plate are equipped in folded structure.
4. the semiconductor according to claim 3 based on graphene optimizes conductive structure, characterized in that the gasket
The left and right sides is equipped with circular arc chamfering to prevent graphene to be broken.
5. a kind of semiconductor based on graphene optimizes conductive structure characterized by comprising be divided into both ends circuit board and function
It puts pipe, the gasket of the graphene platelet that is set between circuit board and power tube and metal heat sink cladding and be located under gasket
Metal heat sink.
6. the semiconductor according to claim 5 based on graphene optimizes conductive structure, characterized in that the graphene
The middle part of thin slice is equipped with opening and the opening is located at circuit board and power tube boundary.
7. the semiconductor according to claim 5 or 6 based on graphene optimizes conductive structure, characterized in that the pad
The left and right sides of piece is equipped with circular arc chamfering to prevent graphene to be broken.
8. the semiconductor according to claim 5 or 6 based on graphene optimizes conductive structure, characterized in that when using two
When block is with Upper gasket, the upper surface of gasket is the complete plane that individual graphene platelet is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821758834.9U CN209659701U (en) | 2018-10-29 | 2018-10-29 | Semiconductor based on graphene optimizes conductive structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821758834.9U CN209659701U (en) | 2018-10-29 | 2018-10-29 | Semiconductor based on graphene optimizes conductive structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209659701U true CN209659701U (en) | 2019-11-19 |
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ID=68505828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821758834.9U Active CN209659701U (en) | 2018-10-29 | 2018-10-29 | Semiconductor based on graphene optimizes conductive structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209659701U (en) |
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2018
- 2018-10-29 CN CN201821758834.9U patent/CN209659701U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Wenhua Inventor after: Song Bowei Inventor after: Chen Mingzheng Inventor after: Jin Xiaojuan Inventor after: Fan Yingying Inventor before: Li Wenhua Inventor before: Song Bowei Inventor before: Chen Mingzheng Inventor before: Jin Xiaojuan Inventor before: Fan Yingying |
|
| CB03 | Change of inventor or designer information |