CN209328908U - A kind of p type single crystal silicon battery front side coating structure - Google Patents
A kind of p type single crystal silicon battery front side coating structure Download PDFInfo
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Abstract
The utility model discloses a kind of p type single crystal silicon battery front side coating structure, including crystal silicon front side films, the crystal silicon front side films have been sequentially depositing first layer SiO2Layer, second layer phosphorus doped polysilicon (n-Si), the SiNx layer of third layer 60-100nm, the first layer is with a thickness of 1-4nm, and the second layer is with a thickness of 10-30nm, and third layer is with a thickness of 60-100nm.The utility model reduces the Carrier recombination of silver grating line Yu silicon contact position, the polycrystalline silicon membrane and battery front side for mixing P form n+/n layers, it prevents few sub (hole) in battery n-type silicon migrate to front surface, to reduce surface recombination, improves Voc.
Description
Technical field
The utility model relates to photovoltaic solar cell technical field, specially a kind of p type single crystal silicon battery front side plated film
Structure.
Background technique
Energy problem is always an important factor for perplexing China's economic development, and the increasingly exhaustion of fossil energy makes new energy
Research become particularly critical, the especially research of solar energy.Photovoltaic material is the key content of solar energy research, wherein monocrystalline
Silicon is because having many advantages, such as, such as: crystal structure perfection, few, with high purity, the high minority carrier life time of impurity, resistivity relatively are easy to control
Deng becoming the outstanding person in photovoltaic material.So far, monocrystalline silicon is still with mature smelting technique, easy production hand
Method and the incident photon-to-electron conversion efficiency of the relative efficiency position important in occupation of photovoltaic industry.
In current solar cell market, about 85% is crystal silicon battery, and there is also about 15% to belong to hull cell.It is therein
Monocrystalline silicon and polysilicon are divided in crystal silicon battery market again.Related data shows that the market share accounting of monocrystalline silicon and polysilicon is distinguished
Between 30%-40% and 50%-60%.The difference of monocrystalline silicon and polysilicon is that silicon is former when the solidification of the elemental silicon of melting
Son is arranged in many nucleus with diamond lattice, if these nucleus grow up to the identical chip of high preferred orientation, forms monocrystalline silicon；
If these nucleus grow up to the different chip of high preferred orientation, polysilicon is formed.
In terms of the difference of polysilicon and monocrystalline silicon is mainly manifested in physical property, such as in mechanical property, electrical properties side
Face, polysilicon are not so good as monocrystalline silicon.Current monocrystalline silicon piece is broadly divided into N-type and p-type.It is mixed in ultrapure monocrystalline silicon micro
III A race element, forms P-type silicon semiconductor such as boron-doping；Micro VA race element is mixed, phosphorus or arsenic formation N-type silicon is such as mixed and partly leads
Body.To put it simply, p-doped is N-type in monocrystalline silicon, the more more then free electrons of p-doped are more, and conductive capability is stronger, and resistivity is just
It is lower；And boron-doping is p-type, the boron-doping the more, and the hole that can replace silicon generation is also more, and conductive capability is stronger, and resistivity is got over
It is low.Before 2011, either monocrystalline silicon or polysilicon chip, using p-type as main product.But it is more according to experimental observation
Brilliant p-type production interchange efficiency is up to 17.4%, and monocrystalline p-type production interchange efficiency is up to 19%.But monocrystalline p-type product
There are one obvious disadvantage, i.e., the problems for having power loss (Power Loss) relatively large at mould group end, so current P
Type product is fewer and fewer.And N-type single crystal product article does not have the problem of power loss, and transfer efficiency generally can break through 20%
More than, become one of the positive input research of current monocrystalline silicon manufacturer and field of research and development.
It is always hot spot that photovoltaic industry, which mentions Quality Research to solar cell synergistic,.It reduces optical loss, reduce carrier
It is compound, it is the most important approach for improving crystal silicon battery efficiency.For example, solar battery front side and the back side carry out coating process,
Exactly in order to reduce optical loss and reduce surface recombination, to improve open-circuit voltage Voc, short circuit current Isc and fill factor
FF, the final incident photon-to-electron conversion efficiency for improving crystal silicon battery.
Patent CN102522446B discloses a kind of HIT solar battery structure and preparation method thereof, the battery structure, in N
The front and back sides of type silicon substrate thermal oxide SiO first2Layer is as exposure mask；In positive SiO2Aperture is carried out on layer；It is sequentially depositing in front
Intrinsic amorphous silicon layer, P-type non-crystalline silicon layer；AL is deposited later2O3Film；In AL2O3Aperture on film；Then electrically conducting transparent is deposited
Film is as Window layer；Slurry silk-screen printing Ag grid is finally used again；It is first still to SiO at the back side of battery2Layer is opened
Then hole is sequentially depositing intrinsic amorphous silicon layer, N-type non-crystalline silicon layer, then deposits transparent conductive film；Last silk-screen printing Ag again
Grid, to form a complete battery device.Technical effect is a simplified cleaning process, is conducive to realize industrialization.But electricity
It still needs further improvement for pond transformation efficiency.
The front film layer structure of p-type single crystal battery relatively conventional at present is to deposit SiO2/ SiNx antireflective and passivating film
Layer, backside deposition Al2O3/ SiNx or SiO2/ SiNx passivation layer.
It is SiO that the p-type crystal silicon front surface structure of present mainstream, which is in passivating film,2The upper surface of/SiNx, silk-screen printing silver electrode
Then grid line is sintered, complete metallization, contact silver electrode directly with silicon chip.But in silver-colored silicon contact position, Carrier recombination compared with
Greatly, to be unfavorable for the raising of electrical property, cell conversion efficiency is influenced.
Utility model content
To overcome the above technical disadvantages, the utility model provides a kind of p type single crystal silicon battery front side coating structure, the film
The great advantage of layer structure is the Carrier recombination for reducing silver grating line Yu silicon contact position, and the polycrystalline silicon membrane and battery for mixing P are just
Face forms n+/n layer, prevent few sub (hole) in battery n-type silicon to front surface migration, so that surface recombination is reduced,
Improve Voc.
In order to achieve the above object, the utility model the following technical schemes are provided:
A kind of p type single crystal silicon battery front side coating structure, including crystal silicon front side films, the crystal silicon front side films are included in described
The phosphorus-diffused layer that p type single crystal silicon battery front side is sequentially depositing, SiO2Layer, phosphorus doped polysilicon (n-Si) layer, SiNx layer, silver electrode grid
Line；It is characterized in that, phosphorus doped polysilicon (n-Si) layer local deposits at silver electrode grid line, SiNx layer whole face are deposited on outermost layer；
Wherein, the top edge of phosphorus-diffused layer is linear or waveform；SiO2The linear or waveform of layer, and it is upper with phosphorus-diffused layer
Edge shape is identical.
Preferably, the SiO2Layer with a thickness of 1-4nm；The phosphorus doped polysilicon layer with a thickness of 10-30nm；It is described
SiNx layers with a thickness of 60-100nm.
Preferably, the silver electrode grid line is silk-screen printing, and silver electrode grid line includes the thin grid of front main grid and front.
Preferably, the figure of the silver electrode grid line of the figure and silk-screen printing of the phosphorus doped polysilicon layer matches, and makes subsequent
Printing
Silver electrode grid line set be imprinted in the phosphorus doped polysilicon layer pattern of deposition；
Preferably, the width of the phosphorus doped polysilicon layer and length are all larger than positive silver electrode grid line；
Preferably, width of the phosphorus doped polysilicon at thin grid than thin grid width more than 0.008-0.02mm, length at thin grid
Spend 0.6-0.85mm more than the length than thin grid, width at main grid than main grid width more than 0.2-0.3mm, length is than main grid
The more 2.71-3.71mm of length.
The preparation method of the p type single crystal silicon battery front side coating structure, comprising the following steps:
(1) after making herbs into wool, diffusion, etching, SiO is deposited in battery front surface2Layer；
(2) back side coating film；
(3) what mask method was selective mixes n-Si layers of polysilicon layer of P in battery front side deposition；
(4) battery front side exposure mask is removed；
(5) SiNx layer is deposited in positive whole face；
(6) silk-screen printing and metallization process complete battery production.
Preferably, in step (1), the method for the deposition is thermal oxide or wet chemical method.
Preferably, in step (3), the method for the deposition be PECVD (plasma enhanced chemical vapor deposition method) or
LPCVD (low pressure gas phase deposition method).
Preferably, in step (5), the method for the deposition is PECVD.
Preferably, in step (6), the silk-screen printing and metallization process are silk-screen printing front silver electrode grid line.
The p type single crystal silicon battery front side coating structure can be applied in solar battery.
Compared with the prior art, the utility model has the advantage that
(1) the utility model is a kind of for the positive plated film film layer structure of p-type single crystal battery, realizes front electrode grid line
Local deposits are passivated polysilicon layer below region.
(2) the novel p type single crystal silicon battery front side plated film film layer pointed out compares existing mainstream film layer structure, in front
More one layer of phosphorus doped polysilicon, the doped polysilicon layer combination thin oxide layers can play battery front side very well at electrode pattern
Tunneling effect, prevent few sub (hole) in battery from migrating to front surface, and front metal electrode is and doped polysilicon layer
Contact avoids the high problem of surface recombination caused by metal electrode and silicon chip directly contact, improves battery Voc and Isc, from
And improve cell conversion efficiency.
(3) front film layer structure is applied on p type single crystal silicon battery, realizes selective deposition polysilicon passivation layer, is protected
Card front electrode is directly contacted with the polysilicon passivation layer deposited, rather than is directly contacted with silicon chip.
(4) front film layer structure is easily achieved, and can be applied to mass production.
Detailed description of the invention
Fig. 1: p type single crystal silicon battery front side film layer structure fabrication processing figure, attached concrete meaning marked in the figure are as follows:
1:P type monocrystalline silicon；2:SiO2；3:n-Si；4:SiNx；5:Ag gate electrode line；6: phosphorus-diffused layer；
Fig. 2: the film layer structure signal of the utility model；
Fig. 3: the n-Si sedimentary part diagram of 1 battery of the utility model embodiment；
Fig. 4: 1 battery front side electrode grid line part of comparative example diagram；
Now in conjunction with drawings and examples, the utility model is described in further detail:
Specific embodiment
Embodiment 1
A kind of preparation method of p type single crystal silicon battery front side coating structure, comprising the following steps:
(1) after making herbs into wool, diffusion, etching, thermal oxidation process deposits SiO in battery front surface2Layer, with a thickness of 2nm；
(2) back side coating film；
(3) mask method selectivity, mixes n-Si layers of polysilicon layer of P in battery front side deposition, with a thickness of 20nm, deposition side
Method is PECVD, and mask used figure will coincide with the pattern complementary of the positive silver electrode grid line of subsequent silk-screen printing, it is ensured that institute
The polysilicon layer figure of deposition is consistent with the figure of positive silver electrode grid line, can make the positive silver electrode grid line chromatography of subsequent printing
In the polysilicon layer figure of deposition；
(4) battery front side exposure mask is removed；
(5) SiNx layer, 80nm are deposited in positive whole face, the method for the deposition is PECVD；
(6) silk-screen printing front silver electrode grid line completes battery production.
Wherein, cell side length 156.75mm*156.75mm, the cell piece for being 210mm to angular diameter, silk-screen printing is just
The thin grid in face have 106 altogether, and every width and length are respectively 0.032mm and 155.15mm, and front main grid has 5 altogether, every wide
Degree and length are respectively 0.7mm and 146.29mm, and the grid line gross area is 1026.4118 square millimeters.Phosphorus doped polysilicon is in subsequent print
Brushing width and length at thin grid is respectively 0.04mm and 156mm, and width and length at subsequent printing main grid are respectively
0.9mm and 150mm, the gross area are 1317.36 square millimeters.
Embodiment 2
A kind of preparation method of p type single crystal silicon battery front side coating structure, comprising the following steps:
(1) after making herbs into wool, diffusion, etching, wet chemical method deposits SiO in battery front surface2Layer, with a thickness of 1nm；
(2) back side coating film；
(3) mask method selectivity, mixes n-Si layers of polysilicon layer of P in battery front side deposition, with a thickness of 30nm, deposition side
Method is PECVD, and mask used figure will coincide with the pattern complementary of the positive silver electrode grid line of subsequent silk-screen printing, it is ensured that institute
The polysilicon layer figure of deposition is consistent with the figure of silver electrode grid line, the positive silver electrode grid line set of subsequent printing can be made to be imprinted on heavy
In long-pending polysilicon layer figure；
(4) battery front side exposure mask is removed；
(5) SiNx layer, 60nm are deposited in positive whole face, the method for the deposition is PECVD；
(6) silk-screen printing front silver electrode grid line completes battery production.
Wherein, the front of cell side length 157mm*157mmmm, the cell piece for being 210mm to angular diameter, silk-screen printing are thin
Grid have 106 altogether, and every width and length are respectively 0.032mm and 155.4mm, and front main grid has 5 altogether, every width and length
Degree is respectively 0.7mm and 146.5mm, and the grid line gross area is 1027.9948 square millimeters.Phosphorus doped polysilicon is in the subsequent thin grid of printing
The width and length at place are respectively 0.04mm and 156mm, the width and length at subsequent printing main grid be respectively 0.9mm and
150mm, the gross area are 1317.36 square millimeters.
Embodiment 3
A kind of preparation method of p type single crystal silicon battery front side coating structure, comprising the following steps:
(1) after making herbs into wool, diffusion, etching, thermal oxidation process deposits SiO in battery front surface2Layer, with a thickness of 4nm；
(2) back side coating film；
(3) mask method selectivity, mixes n-Si layers of polysilicon layer of P in battery front side deposition, with a thickness of 10nm, deposition side
Method is LPCVD.
(4) battery front side exposure mask is removed；
(5) SiNx layer, 100nm are deposited in positive whole face, the method for the deposition is PECVD；
(6) silk-screen printing front silver electrode grid line completes battery production.
Wherein, cell side length 157.75mm*157.75mm, the cell piece for being 210mm to angular diameter, silk-screen printing is just
The thin grid in face have 110 altogether, and every width and length are respectively 0.032mm and 156.15mm, and front main grid has 5 altogether, every wide
Degree and length are respectively 0.7mm and 147.29mm, and the grid line gross area is 1052.843 square millimeters.Phosphorus doped polysilicon is in subsequent print
Brushing width and length at thin grid is respectively 0.04mm and 157mm, and width and length at subsequent printing main grid are respectively
0.9mm and 150mm, the gross area are 1346 square millimeters.
Embodiment 4
A kind of preparation method of p type single crystal silicon battery front side coating structure, comprising the following steps:
(1) after making herbs into wool, diffusion, etching, thermal oxidation process deposits SiO in battery front surface2Layer, with a thickness of 2nm；
(2) back side coating film；
(3) mask method selectivity, mixes n-Si layers of polysilicon layer of P in battery front side deposition, with a thickness of 20nm, deposition side
Method is LPCVD, and mask used figure will coincide with the pattern complementary of the positive silver electrode grid line of subsequent silk-screen printing, it is ensured that institute
The polysilicon layer figure of deposition is consistent with the figure of positive silver electrode grid line, can make the positive silver electrode grid line chromatography of subsequent printing
In the polysilicon layer figure of deposition；
(4) battery front side exposure mask is removed；
(5) SiNx layer, 80nm are deposited in positive whole face, the method for the deposition is PECVD；
(6) silk-screen printing front silver electrode grid line completes battery production.
Wherein, cell side length 156.75mm*156.75mm, the cell piece for being 210mm to angular diameter, silk-screen printing is just
The thin grid in face have 106 altogether, and every width and length are respectively 0.032mm and 155.15mm, and front main grid has 5 altogether, every wide
Degree and length are respectively 0.7mm and 146.29mm, and the grid line gross area is 1026.4118 square millimeters.Phosphorus doped polysilicon is in subsequent print
Brushing width and length at thin grid is respectively 0.052mm and 156mm, and width and length at subsequent printing main grid are respectively
1.0mm and 150mm, the gross area are 1582.312 square millimeters.
Comparative example 1
Compared with Example 1, difference is, phosphorus doped polysilicon layer is deposited overall (non local).
Comparative example 2
Compared with Example 1, difference is, front deposition SiO2/ SiNx passivation layer, on the passivation layer face, silk-screen printing
Silver electrode grid line, is then sintered, and completes metallization, contacts silver electrode directly with silicon chip.
Technical effect
Battery performance test: according to conventional laboratory conditions, using Halm battery electrical performance testing instrument, at 25 DEG C of temperature,
Light intensity 1000w/m2Under the conditions of, carry out battery performance test.
Battery performance test data such as the following table 1:
1 battery performance of table
| Test group | Voc(V) | Isc(A) | FF (%) | Eff (%) |
| Embodiment 1 | 0.673 | 9.827 | 81.10 | 21.95 |
| Embodiment 2 | 0.670 | 9.830 | 81.19 | 21.89 |
| Embodiment 3 | 0.671 | 9.818 | 81.16 | 21.88 |
| Embodiment 4 | 0.672 | 9.828 | 81.15 | 21.92 |
| Comparative example 1 | 0.651 | 9.567 | 79.20 | 20.19 |
| Comparative example 2 | 0.667 | 9.802 | 80.80 | 21.61 |
By comparing as can be seen that the film layer structure of the utility model can be obviously improved Voc and FF, to improve battery
Transformation efficiency.
Above-mentioned detailed description is illustrating for one of the utility model possible embodiments, which is not
To limit the scope of the patents of the utility model, all equivalence enforcements or change without departing from carried out by the utility model should all include
In the range of technical solutions of the utility model.
Claims (4)
1. a kind of p type single crystal silicon battery front side coating structure, including crystal silicon front side films, the crystal silicon front side films are included in the P
The phosphorus-diffused layer that type monocrystalline silicon battery front is sequentially depositing, SiO2Layer, phosphorus doped polysilicon layer, SiNx layer, silver electrode grid line；It is special
Sign is that phosphorus doped polysilicon layer local deposits at silver electrode grid line, SiNx layer whole face is deposited on outermost layer；Wherein, phosphorus-diffused layer
Top edge is linear or waveform；SiO2The linear or waveform of layer, and it is identical as the upper edge shape of phosphorus-diffused layer.
2. p type single crystal silicon battery front side coating structure according to claim 1, which is characterized in that the SiO2The thickness of layer
For 1-4nm；The phosphorus doped polysilicon layer with a thickness of 10-30nm；The SiNx layer with a thickness of 60-100nm.
3. p type single crystal silicon battery front side coating structure according to claim 1, which is characterized in that the silver electrode grid line
For silk-screen printing, silver electrode grid line includes the thin grid of front main grid and front.
4. p type single crystal silicon battery front side coating structure according to claim 3, which is characterized in that the phosphorus doped polysilicon layer
Figure and the figure of silver electrode grid line of silk-screen printing match, so that the silver electrode grid line set of subsequent printing is imprinted on mixing for deposition
In P polysilicon layer figure；The width and length of the phosphorus doped polysilicon layer are all larger than positive silver electrode grid line；
Wherein, width of the phosphorus doped polysilicon at thin grid than thin grid width more than 0.008-0.02mm, length at thin grid is than thin
The more 0.6-0.85mm of the length of grid, width at main grid than main grid width more than 0.2-0.3mm, length is more than the length of main grid
2.71-3.71mm。
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| CN109786475A (en) * | 2018-12-27 | 2019-05-21 | 苏州腾晖光伏技术有限公司 | A kind of p type single crystal silicon battery front side coating structure and preparation method thereof |
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| CN109786475A (en) * | 2018-12-27 | 2019-05-21 | 苏州腾晖光伏技术有限公司 | A kind of p type single crystal silicon battery front side coating structure and preparation method thereof |
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