CN209298071U - Wafer defect detection device and semiconductor manufacturing equipment - Google Patents
Wafer defect detection device and semiconductor manufacturing equipment Download PDFInfo
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- CN209298071U CN209298071U CN201920250593.5U CN201920250593U CN209298071U CN 209298071 U CN209298071 U CN 209298071U CN 201920250593 U CN201920250593 U CN 201920250593U CN 209298071 U CN209298071 U CN 209298071U
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- 230000007547 defect Effects 0.000 title claims abstract description 64
- 238000001514 detection method Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 62
- 230000000694 effects Effects 0.000 claims description 9
- 230000002708 enhancing effect Effects 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 6
- 230000003139 buffering effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The utility model provides a kind of wafer defect detection device and semiconductor manufacturing equipment, and the wafer defect detection device includes: process cavity, has the support member being set in the process cavity and for placing wafer；For detecting the detector of the surface defect of the wafer, the detector is mounted on the bottom wall of the process cavity and/or the outside of roof.The wafer defect detection device provided by the utility model can detect the surface defect of wafer before and after production, find the problems in production process point in time, it is abnormal to avoid batch, so that production efficiency is improved, save cost.
Description
Technical field
The utility model relates to field of semiconductor manufacture, in particular to a kind of wafer defect detection device and semiconductor work
Skill equipment.
Background technique
Back pressure failure (down back pressure) often occurs in the manufacturing process of semiconductor, is primarily due to
After the defects of foreign matter of backside of wafer or scuffing, causes wafer to enter in the cavity of production, Electrostatic Absorption disk (ESC) nothing
Method fixes wafer adsorption, so cause wafer scrap or the shutdown of complete machine.If specially one equipment of design is in wafer
The defect of backside of wafer is detected before into the cavity of production, cost can be very high, and a more procedure can be led
It causes production efficiency to reduce, therefore to assess other suitable methods and the defect of backside of wafer is detected.
The manufacturing process of many semiconductors is all to carry out in vacuum cavity, and all can before wafer enters vacuum cavity
First pass through (airlock) between a buffering, be vacuum/atmospheric environment switching cavity between buffering, between existing buffering in be provided with
The sensor that detection wafer whether there is.Refering to fig. 1, Fig. 1 is the signal that existing detection wafer middle between buffering whether there is
Figure, it can be seen from figure 1 that being provided with the multiple support members 12 for placing wafer in 11 between buffering, 11 upper cover is under between buffering
Lid is intermediate to be both provided with transparent cover plate 13, a sensor 14 is each provided at transparent cover plate 13, when wafer is placed on buffering
Between in support member 12 in 11 when, sensor 14 through transparent cover plate 13 to infrared light is issued at wafer, to detect support portion
Whether wafer is placed on part 12.Therefore, how the structure existing buffering is improved, so that entering in wafer true
The defect of backside of wafer can be detected before cavity body, while production efficiency will not be reduced, and then saving cost is mesh
The problem of preceding urgent need to resolve.
Utility model content
The purpose of this utility model is to provide a kind of wafer defect detection device and semiconductor manufacturing equipment, Neng Gou
The surface defect of wafer is detected before and after production, the problems in production process point is found in time, avoids batch different
Often, so that production efficiency is improved, cost is saved.
To achieve the above object, the utility model provides a kind of wafer defect detection device, comprising:
Process cavity has the support member being set in the process cavity and for placing wafer；
For detecting the detector of the surface defect of the wafer, the detector is mounted on the bottom wall of the process cavity
The outside of roof and/or.
Optionally, the region of the process cavity being at least aligned with the detector is transparent.
Optionally, the process cavity includes first part and second part, and the support member is set to described first
In part, the second part is connected to the bottom of the first part, the detector be arranged outside the second part and
Below the bottom wall of the second part, the region of the bottom wall of the second part being at least aligned with the detector is
Bright；Alternatively, the detector is arranged in outside the first part and is located above the roof of the first part, described first
The region of partial roof being at least aligned with the detector is transparent.
Optionally, when the detector is arranged in outside the second part and is located at below the bottom wall of the second part
When, the first part of the process cavity and the junction of second part are equipped with transparent cover plate.
Optionally, the second part of the process cavity is the cavity of a taper.
Optionally, when the detector is arranged in outside the second part and is located at below the bottom wall of the second part
When, the light emitters of the detection effect for enhancing the detector are provided in the second part of the process cavity；When
When the detector is arranged in outside the first part and is located above the roof of the first part, the of the process cavity
The light emitters of the detection effect for enhancing the detector are provided in a part.
Optionally, the detector includes high definition camera or high-power microscope.
Optionally, the detector further include be mounted on the bottom wall and/or roof of the process cavity outside it is infrared
Sensor.
Optionally, the support member include the multiple hold assemblies being set on the side wall of the process cavity and/or
At least one Electrostatic Absorption disk.
The utility model additionally provides a kind of semiconductor manufacturing equipment, comprising: machine table and the utility model provide
The wafer defect detection device.
Compared with prior art, the technical solution of the utility model has the effect that
1, wafer defect detection device provided by the utility model, by process cavity bottom wall and/or roof it is outer
The detector for detecting the surface defect of wafer is arranged in side, so that can be to the surface defect of wafer before and after production
It is detected, finds the problems in production process point in time, it is abnormal to avoid batch, so that production efficiency is improved, section
Cost-saving.
2, semiconductor manufacturing equipment provided by the utility model, due to the wafer defect detection device, so that
The surface defect of wafer can be detected before and after production, find the problems in production process point in time, avoid criticizing
Amount is abnormal, so that production efficiency is improved, saves cost.
Detailed description of the invention
Fig. 1 is the schematic diagram that existing detection wafer middle between buffering whether there is；
Fig. 2 a is the schematic diagram of the wafer defect detection device of an embodiment of the present invention；
Fig. 2 b is the diagrammatic cross-section of wafer defect detection device shown in Fig. 2 a；
Fig. 3 a~3c is the schematic diagram of the wafer defect detection device of the utility model other embodiments.
Wherein, the reference numerals are as follows by 1~3c of attached drawing:
Between 11- buffering；12- support member；13- transparent cover plate；14- sensor；20- wafer；21- process cavity；211-
First part；212- second part；22- support member；23- detector；24- light emitters.
Specific embodiment
It is practical to this below in conjunction with attached drawing 2a to Fig. 3 c to keep the purpose of this utility model, advantages and features clearer
The wafer defect detection device and semiconductor manufacturing equipment of novel proposition are described in further detail.It should be noted that attached drawing
It is all made of very simplified form and uses non-accurate ratio, only to facilitate, lucidly aid in illustrating the utility model
The purpose of embodiment.
An embodiment of the present invention provides a kind of wafer defect detection device, is this reality refering to Fig. 2 a and Fig. 2 b, Fig. 2 a
With the schematic diagram of the wafer defect detection device of a novel embodiment, Fig. 2 b is cuing open for wafer defect detection device shown in Fig. 2 a
Face schematic diagram can be seen that the wafer defect detection device includes process cavity 21 and detector 23, institute from Fig. 2 a and Fig. 2 b
Stating process cavity 21 has the support member 22 for being set in the process cavity 21 and be used to place wafer 20；The detector
23 for detecting the surface defect of the wafer 20, and the detector 23 is mounted on bottom wall and/or the top of the process cavity 21
The outside of wall.
The wafer defect detection device is described in detail referring next to Fig. 2 a to Fig. 3 c:
The process cavity 21 has the support member 22 for being set in the process cavity 21 and be used to place wafer 20.
The process cavity 21 includes first part 211 and second part 212, and in the present embodiment, the second part 212 is connected to institute
State the bottom (as shown in Figure 2 a) of first part 211；In other embodiments, the second part 212 is connected to described first
The top (as shown in Figure 3b) for dividing 211, alternatively, the top and bottom of the first part 211 are all connected with the second part
212 (as shown in Figure 3c).The first part 211 of the process cavity 21 can be cylindrical or polygon column cavity；Institute
The second part 212 for stating process cavity 21 can be the cavity (as shown in Figure 2 a) of a taper, the second part 212 of taper
The form and the distance between the wafer 20 of the detector 23 can be widened.In addition, second of the process cavity 21
212 are divided to be also possible to cylindrical or polygon column cavity.
The support member 22 is set in the first part 211, and the support member 22 includes being set to the work
Multiple hold assemblies (not shown) or at least one Electrostatic Absorption disk (not shown) on the side wall of skill cavity 21, alternatively, described
Support member 22 includes multiple hold assemblies and at least one Electrostatic Absorption disk, and the wafer 20 is fixed on described first
Divide in 211, the wafer 20 is avoided to slide in the support member 22 or fall from the support member 22.
The detector 23 is used to detect the surface defect of the wafer 20, and the detector 23 is mounted on the process cavity
The bottom wall of body 21 or the outside of roof, alternatively, being fitted with the detection on the outside of the bottom wall and roof of the process cavity 21
Device 23.When the detector 23 is mounted on the outside of the bottom wall of the process cavity 21 (as shown in Figure 2 a), the detector
23 can detect the defect of 20 bottom surface of wafer；When the detector 23 is mounted on the top of the process cavity 21
When the outside of wall (as shown in Figure 3b), the detector 23 can detect the defect of 20 top surface of wafer；Work as institute
It states when being fitted with the detector 23 on the outside of the bottom wall and roof of process cavity 21 (as shown in Fig. 3 a and 3c), the wafer
The defect of 20 top surface and bottom surface can be detected.
In addition, the region of the process cavity 21 being at least aligned with the detector 23 be it is transparent so that described
Detector 23 is able to detect that the wafer 20.And since the process cavity 21 is by the first part 211 and described second
Part 212 form, the support member 22 be set in the first part 211 (the i.e. described wafer 20 be located at described first
Divide in 211), then, when the second part 212 is connected to the bottom of the first part 211, if the detector 23 is set
It sets in the second part 212 below bottom wall that is outer and being located at the second part 212 (as shown in Figure 2 a), then described second
It is transparent for dividing the region of 212 bottom wall being at least aligned with the detector 23；If the detector 23 setting is described the
A part 211 is outer and be located above the roofs of the first part 211 (not shown), then the roof of the first part 211
The region being at least aligned with the detector 23 is transparent；If the bottom wall lower section of the second part 212 and described first
It is both provided with the detector 23 (as shown in Figure 3a) above points 211 roof, then the bottom wall of the second part 212 and described
The region of the roof of first part 211 being at least aligned with the detector 23 is transparent.And for the second part 212
The case where being connected to the top of the first part 211 (as shown in Figure 3b), the detector 23 also can be set described
Above the roof of two parts 212, alternatively, being arranged in below the bottom wall of the first part 211, alternatively, being arranged in simultaneously described
Above the roof of second part 212 and below the bottom wall of the first part 211, then, the roof of the second part 212,
The bottom wall of the first part 211 or the roof of the second part 212 and the bottom wall of the first part 211 at least with
The region that the detector 23 is aligned is transparent.And the top and bottom of the first part 211 are all connected
The case where stating second part 212 (as shown in Figure 3c), bottom wall lower section and the second part 212 of the second part 212
The detector 23 can be set simultaneously on roof, then, the bottom wall of the second part 212 and the second part 212
The region of roof being at least aligned with the detector 23 is transparent.
In addition, when the second part 212 is connected to the bottom of the first part 211, and the detector 23 is arranged
When in the second part 212 below bottom wall that is outer and being located at the second part 212 (as shown in Figure 2 a)；Alternatively, when described
Second part 212 is connected to the top of the first part 211, and the detector 23 is arranged outside the second part 212
And it is located at when above the roof of the second part 212 (as shown in Figure 3b)；Alternatively, when the first part 211 top and
Bottom is all connected with the second part 212, and is both provided with above the roof of the second part 212 and below bottom wall described
When detector 23 (as shown in Figure 3c), the first part 211 of the process cavity 21 and the junction of second part 212 are equipped with thoroughly
Bright cover board (not shown), alternatively, being connected between the first part 211 and the second part 212, so that the detector
23 are able to detect that the wafer 20 in the first part 211.
In addition, if the second part 212 is connected to the bottom of the first part 211, when the detector 23 is set
When setting in the second part 212 below bottom wall that is outer and being located at the second part 212, second of the process cavity 21
Divide the light emitters 24 that the detection effect for enhancing the detector 23 is provided in 212；When the detector 23 is arranged
When in the first part 211 above roof that is outer and being located at the first part 211, the first part of the process cavity 21
The light emitters 24 of the detection effect for enhancing the detector 23 are provided in 211；When the bottom of the second part 212
When being both provided with the detector 23 below wall and above the roof of the first part 211, the second part 212 and described
The light emitters 24 of detection effect for enhancing the detector 23 can be all set in first part 211.And if described
Two parts 212 are connected to the top of the first part 211, alternatively, the top and bottom of the first part 211 are all connected with
The second part 212, as long as then above the roof of the second part 212 or bottom wall lower section or the first part 211
Bottom wall below the perhaps second part 212 roof above and the bottom wall of the first part 211 below or it is described
It is provided with the detector 23 above the roof of second part 212 and below bottom wall, then the corresponding second part 212, or
It is provided with for enhancing the detection in the first part 211 or the second part 212 and the first part 211
The light emitters 24 of the detection effect of device 23.The light emitters 24 can be in the detector 23 to the wafer 20
When surface defect is detected, the supplement of light intensity is carried out to the surface of the wafer 20, so that the detector 23 detects
To the picture on surface of the wafer 20 be more clear so that 20 surface of the wafer that will test picture with
When the picture on normal 20 surface of wafer compares, can find in time the surface of the wafer 20 with the presence or absence of scratching or
The defects of foreign matter.
The detector 23 may include high definition camera or high-power microscope, and the light emitters 24 can be one group
Circular LED light.The detector 23 may also include the infrared of the outside of the bottom wall or roof that are mounted on the process cavity 21
Sensor (not shown), alternatively, being fitted with the infrared sensor on the outside of the bottom wall and roof of the process cavity 21.
In the production process of the wafer 20, the process cavity 21 can be true together under the wafer 20 entrance
Between buffering before starting formally to produce in cavity body (not shown), before entering vacuum cavity, first the wafer 20 is put
It sets in the support member 22 in the process cavity 21, then, the infrared sensor detects whether the wafer is deposited
, then, the high definition camera and the light emitters 24 are opened, the surface defect of the wafer 20 are detected,
After detecting OK, the wafer 20 is transmitted in the vacuum cavity and is produced；Moreover, when the wafer 20 is in the vacuum chamber
After completing production in body, the wafer 20 can be also conveyed once again in the process cavity 21, using the detector 23
Detect the surface defect of the wafer 20.If the wafer 20 is detected before entering the vacuum cavity and is found the problem, can
It is fed back with one of production process forward, to search problem；If the wafer 20 is to produce to complete in the vacuum cavity
Detection is found the problem later, then illustrates the production technology in the vacuum cavity or have to the transfer member of the wafer 20
Problem needs shutdown inspection.The surface defect of the wafer 20 is detected before and after entering the vacuum cavity,
Make it possible to find the problems in production process point in time, avoids batch abnormal, improve production efficiency, and then save cost.
In conclusion the wafer defect detection device includes: process cavity, has and be set in the process cavity simultaneously
For placing the support member of wafer；For detecting the detector of the surface defect of the wafer, the detector is mounted on institute
State the bottom wall of process cavity and/or the outside of roof.The wafer defect detection device provided by the utility model can be in life
The surface defect of wafer is detected before and after production, finds the problems in production process point in time, avoids batch abnormal,
So that production efficiency is improved, cost is saved.
An embodiment of the present invention provides a kind of semiconductor manufacturing equipment, comprising: machine table and the utility model
The wafer defect detection device provided.The machine table includes the vacuum cavity for producing wafer, the wafer defect inspection
Surveying device can be set in the position close to the vacuum cavity, so that the wafer is in the wafer defect detection device
The process cavity in complete surface defect detection after be immediately communicated to be produced in the vacuum cavity, complete life
After production, it can also be immediately communicated to carry out the detection of surface defect in the process cavity again.Moreover, the process cavity can
Being improved the structure between the buffering, so that described between the buffering in the existing semiconductor manufacturing equipment
The detection of the middle surface defect for carrying out the wafer between buffering.Due to having the wafer defect in the semiconductor manufacturing equipment
Detection device, so that can detect to the surface defect of the wafer before and after production, discovery was produced in time
It is abnormal to avoid batch for the problems in journey point, so that production efficiency is improved, saves cost.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Fixed, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content belong to right and want
Seek the protection scope of book.
Claims (10)
1. a kind of wafer defect detection device characterized by comprising
Process cavity has the support member being set in the process cavity and for placing wafer；
For detecting the detector of the surface defect of the wafer, the detector be mounted on the process cavity bottom wall and/
Or the outside of roof.
2. wafer defect detection device as described in claim 1, which is characterized in that the process cavity at least with the inspection
It is transparent for surveying the region of device alignment.
3. wafer defect detection device as described in claim 1, which is characterized in that the process cavity include first part and
Second part, the support member are set in the first part, and the second part is connected to the bottom of the first part
Portion, the detector are arranged in outside the second part and are located at below the bottom wall of the second part, the second part
The region of bottom wall being at least aligned with the detector is transparent；Alternatively, the detector is arranged outside the first part
And be located above the roof of the first part, the region of the roof of the first part being at least aligned with the detector is
Transparent.
4. wafer defect detection device as claimed in claim 3, which is characterized in that when the detector is arranged described second
When below the outer and bottom wall positioned at the second part in part, the first part of the process cavity and the junction of second part
Equipped with transparent cover plate.
5. wafer defect detection device as claimed in claim 3, which is characterized in that the second part of the process cavity is one
The cavity of taper.
6. wafer defect detection device as claimed in claim 3, which is characterized in that when the detector is arranged described second
When below the outer and bottom wall positioned at the second part in part, it is provided in the second part of the process cavity for enhancing
State the light emitters of the detection effect of detector；When the detector is arranged outside the first part and is located at described first
When above partial roof, the detection effect for enhancing the detector is provided in the first part of the process cavity
Light emitters.
7. such as wafer defect detection device described in any one of claims 1 to 6, which is characterized in that the detector includes
High definition camera or high-power microscope.
8. wafer defect detection device as claimed in claim 7, which is characterized in that the detector further include be mounted on it is described
The infrared sensor in the outside of the bottom wall and/or roof of process cavity.
9. wafer defect detection device as described in claim 1, which is characterized in that the support member is described including being set to
Multiple hold assemblies and/or at least one Electrostatic Absorption disk on the side wall of process cavity.
10. a kind of semiconductor manufacturing equipment characterized by comprising machine table and such as any one of claims 1 to 9
The wafer defect detection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920250593.5U CN209298071U (en) | 2019-02-28 | 2019-02-28 | Wafer defect detection device and semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920250593.5U CN209298071U (en) | 2019-02-28 | 2019-02-28 | Wafer defect detection device and semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209298071U true CN209298071U (en) | 2019-08-23 |
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ID=67642923
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920250593.5U Expired - Fee Related CN209298071U (en) | 2019-02-28 | 2019-02-28 | Wafer defect detection device and semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209298071U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111107324A (en) * | 2019-12-31 | 2020-05-05 | 上海陛通半导体能源科技股份有限公司 | Monitoring device and monitoring method of wafer transmission system |
-
2019
- 2019-02-28 CN CN201920250593.5U patent/CN209298071U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111107324A (en) * | 2019-12-31 | 2020-05-05 | 上海陛通半导体能源科技股份有限公司 | Monitoring device and monitoring method of wafer transmission system |
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Granted publication date: 20190823 |