CN209217011U - A kind of light-emitting diode chip for backlight unit - Google Patents

Abstract

The utility model discloses a kind of light-emitting diode chip for backlight unit comprising: epitaxial layer includes successively from top to bottom the first semiconductor layer, luminescent layer, the second semiconductor layer and substrate, and the polarity of first semiconductor layer and second semiconductor layer is different；Transparency conducting layer is formed on first semiconductor layer；Protective layer is formed on the transparency conducting layer；First electrode, including the first pad and the first extension item.Utility model has the advantages that this light-emitting diode chip electrode includes pad and extension item, and extending item is to be electrically connected via through-hole with transparency conducting layer or semiconductor layer, the aperture size for extending a lower through-hole is set to using changing, keep the aperture size apart from the farther away through-hole of the pad of the electrode larger, and keep the aperture size apart from the closer through-hole of the pad of the electrode smaller, the impressed current be conducive on pad is uniformly scattered on entire chip via extension item by through-hole, and light, the electrical property of light emitting diode are improved.

Description

A kind of light-emitting diode chip for backlight unit

Technical field

The utility model relates to technical field of semiconductors more particularly to a kind of light-emitting diode chip for backlight unit.

Background technique

Light emitting diode (LED) is widely used in solid-state lighting light source, has many advantages, such as that power consumption is low and the service life is long, Conventional light source is gradually replaced.

During pushing light emitting diode to replace conventional light source, whether the cost of light emitting diode can drop to and tradition Light source is quite particularly significant, and the cost composition of light emitting diode includes mainly extension, chip and encapsulation etc., in terms of chip, in State patent CN207265080U proposes a kind of low-cost design for reducing technique, and concept is as shown in Figure 1, comprising: epitaxial layer, from It successively include the first semiconductor layer 113, luminescent layer 112, the second semiconductor layer 111 and substrate 110 under above；Transparency conducting layer 120, it is formed on the first semiconductor layer 113；Protective layer 130 is formed on transparency conducting layer 120；First electrode, including first Pad 141 and the first extension item 142, are electrically connected with the first semiconductor layer 113；Second electrode, including the second pad 143 With the second extension item 144, it is electrically connected with the second semiconductor layer 111；Wherein the first extension item 142 is formed in protective layer On 130, it is electrically connected through protective layer 130 with transparency conducting layer 120 by a series of first through hole 151；And second Extension item 144 is formed on protective layer 130, runs through protective layer 130, transparency conducting layer by a series of second through-hole 152 120, the first semiconductor layer 113 and luminescent layer 112 are electrically connected with the second semiconductor layer 111.The electrode packet of such chip Include pad and extension item, wherein the function of pad be chip is electrically connected to for external circuit, and the function for extending item be will be outer The electric current that portion's circuit is injected into pad is extended, and is uniformly scattered onto electric current on entire chip, the electrode design of this chip Via design that is complex, being especially electrically connected between extension item and transparency conducting layer or semiconductor layer, if not passing through Special optimization is crossed, light, the electrical property of light emitting diode will be will affect.

According to conductor value relatable formula R=ρ L/S, wherein R is resistance, ρ is resistivity, L is length, S is sectional area, it is known that Resistance value when road current spread can be inversely proportional, therefore the extension item of above-mentioned electrode is far from weldering to apart from directly proportional with sectional area The position of disk has biggish resistance value, is unfavorable for current spread, increases the sectional area for extending item to reduce resistance value, then The light that light emitting diode is issued can be covered, the efficiency of light extraction of light emitting diode is declined.

Utility model content

The utility model provides the following technical solutions: a kind of light-emitting diode chip for backlight unit comprising:

Epitaxial layer includes successively from top to bottom the first semiconductor layer, luminescent layer, the second semiconductor layer and substrate, and described The polarity of first semiconductor layer and second semiconductor layer is different；

Transparency conducting layer is formed on first semiconductor layer；

Protective layer is formed on the transparency conducting layer；

First electrode, including the first pad and the first extension item, the electrical property of first pad and the first extension item It is connected, and the first extension item is formed on the protective layer, the first extension item is passed through by several first through hole The protective layer is worn, is electrically connected with the transparency conducting layer, the quantity of several first through hole is m, and wherein m is Positive integer and 20 >=m >=2；

Second electrode is electrically connected with second semiconductor layer；

Wherein: the aperture size of several first through hole under the first extension item is different, apart from described first The aperture size of the farther away first through hole of pad is larger, and the hole apart from the closer first through hole of first pad Diameter size is smaller.

Wherein: the second electrode includes the second pad and the second extension item, and second pad and described second extends Item is electrically connected, and the second extension item is formed on the protective layer, second extension article by several the Two through-holes run through the protective layer, the transparency conducting layer, first semiconductor layer and the luminescent layer, with described the second half Conductor layer is electrically connected, and the quantity of several second through-holes is n, and wherein n is positive integer and 20 >=n >=2.

Wherein: the aperture size of several second through-holes under the second extension item is different, apart from described second The aperture size of farther away second through-hole of pad is larger, and the hole apart from closer second through-hole of second pad Diameter size is smaller.

Wherein: first pad is formed on first semiconductor layer, with first semiconductor layer and described Bright conductive layer is electrically connected.

Wherein: second pad is formed on second semiconductor layer, forms electrical property with second semiconductor layer Connection.

Compared with prior art, the utility model provides a kind of light-emitting diode chip for backlight unit, has following the utility model has the advantages that electric Pole includes pad and extension item, and extending item is to be electrically connected via through-hole with transparency conducting layer or semiconductor layer, is utilized Change the aperture size for being set to extension lower through-hole, keep the aperture size apart from the farther away through-hole of the pad of the electrode larger, And keep the aperture size apart from the closer through-hole of the pad of the electrode smaller, wherein the through-hole of larger aperture size can increase extension The contact area of item and transparency conducting layer or semiconductor layer reduces resistance value, can so compensate each different on extension item The through-hole difference remote, close because of the pad apart from the electrode, and cause the current convergence on extension item in the weldering apart from the electrode The problem of disk closer through-hole, the impressed current be conducive on pad are uniformly scattered onto entire chip by through-hole via extension item On, improve light, the electrical property of light emitting diode.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of existing light emitting diode.

Fig. 2 is the schematic diagram of the light emitting diode of the utility model embodiment 1.

Fig. 3 is the top view of the light emitting diode of the utility model embodiment 2.

Fig. 4 is the top view of the light emitting diode of the utility model embodiment 3.

Fig. 5 is the top view of the light emitting diode of the utility model embodiment 4.

Appended drawing reference:

Substrate 110, the second semiconductor layer 111, luminescent layer 112, the first semiconductor layer 113, transparency conducting layer 120, protection Layer the 130, first pad 141, first extension item 142, the second pad 143, second extension item 144, first through hole 151, second are logical Hole 152.

Substrate 210, the second semiconductor layer 211, luminescent layer 212, the first semiconductor layer 213, transparency conducting layer 220, protection Layer the 230, first pad 241, first extension item 242, the second pad 243, second extension item 244, first through hole 251, first are logical One of one of hole 251a, two 251b of first through hole, three 251c of first through hole, the second through-hole 252, the second through-hole 252a, Three 252c of two 252b of two through-holes, the second through-hole.

Specific embodiment

The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.

Embodiment 1, as shown in Fig. 2, for a kind of light-emitting diode chip for backlight unit top view and along A-A, B-B cut section Figure comprising substrate 210, the second semiconductor layer 211, luminescent layer 212, the first semiconductor layer 213, transparency conducting layer 220, protection Layer the 230, first pad 241, first extension item 242, the second pad 243, second extension item 244, first through hole 251, second are logical Hole 252；Wherein:

Epitaxial layer successively includes the first semiconductor layer 213, luminescent layer 212, the second semiconductor layer 211 and lining from top to bottom Bottom 210；

Transparency conducting layer 220 is formed on the first semiconductor layer 213；

Protective layer 230 is formed on transparency conducting layer 220；

First electrode includes the first pad 241 and the first extension item 242, the protective layer 230 under 241 position of the first pad And transparency conducting layer 220 is removed using chips in etching technology, is made the first pad 241 and the first semiconductor layer 213 and transparent is led Electric layer 220 is electrically connected.

Specifically, the first extension item 242 of two extensions is set at first pad 241, in several first through hole Protective layer 230 under 251 positions is removed using chips in etching technology, several above-mentioned first through hole 251 are by three aperture rulers One of very little different first through hole 251a, two 251b of first through hole and three 251c of first through hole are formed, the first extension item 242 by the first pad 241 extend outwardly sequentially via one of first through hole 251a, two 251b of first through hole and first through hole it Three 251c are electrically connected with transparency conducting layer 220.

Wherein: second electrode includes the second pad 243 and the second extension item 244, the protection under 243 position of the second pad Layer 230, transparency conducting layer 220, the first semiconductor layer 213 and luminescent layer 212 are removed using chips in etching technology, make the second weldering Disk 243 is electrically connected with the second semiconductor layer 211.

Specifically, the second extension item 244 of two extensions is set at the second pad 243, at several second through-holes 252 Protective layer 230, transparency conducting layer 220, the first semiconductor layer 213 and luminescent layer 212 under setting are moved using chips in etching technology Remove, several above-mentioned second through-holes 252 be by one of the second different through-hole of three aperture sizes 252a, the second through-hole two Three 252c of 252b and the second through-hole are formed, and the second extension item 244 is extended outwardly by the second pad 243 sequentially to be led to via second Three 252c of one of hole 252a, two 252b of the second through-hole and the second through-hole are electrically connected with the second semiconductor layer 211.

Specifically, substrate 210 choose include but is not limited to sapphire, aluminium nitride, gallium nitride, silicon, silicon carbide, GaAs, Gallium phosphide；Second semiconductor layer 211 is n-type semiconductor layer, by Al_aGa_1-aN(0≤a≤1) material composition；Luminescent layer 212 by In_bAl_cGa_1-b-cN(0≤b≤1,0≤c≤1,0≤b+c≤1) material composition；First semiconductor layer 213 is p-type semiconductor layer, By Al_dGa_1-dN(0≤d≤1) material composition；Transparency conducting layer 220 is ITO；Protective layer 230 is SiO₂, the protective layer 230 1 Aspect protects LED surface, is on the other hand used as current barrier layer, for inhibiting the electric current of base part to cross injection, increases Add the current spread of transparency conducting layer 220 and the second semiconductor layer 211；First pad 241, first extends item 242, the second pad 243 and second extension item 244 all by one of nickel, gold, platinum, aluminium, titanium, chromium, palladium, cobalt, copper or a variety of any combination.

In the present embodiment, the aperture size of several above-mentioned first through hole 251 extends outwardly along the first pad 241 gradually to be become Greatly, i.e. the size of aperture size are as follows: one of first through hole 251a < first through hole two 251b < first through hole, three 251c, so Each different first through hole 251 on the first extension item 242 can be compensated because the first pad of distance 241 remote, close difference, and Current convergence on the first extension item 242 is caused to have one of the closer first through hole of the first pad of distance 241 251a the problem of Entire chip is uniformly scattered by first through hole 251 via the first extension item 242 conducive to the impressed current on the first pad 241 On, improve light, the electrical property of light emitting diode.

Embodiment 2, as shown in figure 3, being a kind of top view of light-emitting diode chip for backlight unit, be different from place of embodiment 1 and be, In light emitting diode construction described in the present embodiment, the aperture size of several second through-holes 252 extends outwardly along the second pad 243 It becomes larger, i.e. the size of aperture size are as follows: the three of the through-hole of two 252b < second of one of second through-hole through-hole of 252a < second 252c, can so compensate each different second through-holes 252 on the second extension item 244 because the second pad of distance 243 it is remote, It is close different, and cause the current convergence on the second extension item 244 in one of closer second through-hole of the second pad of distance 243 252a The problem of, the impressed current be conducive on the second pad 243 passes through 252 uniformly dispersing of the second through-hole via the second extension item 244 Onto entire chip, light, the electrical property of light emitting diode are improved.

Embodiment 3, as shown in figure 4, being a kind of top view of light-emitting diode chip for backlight unit, be different from place of embodiment 2 and be, In light emitting diode construction described in the present embodiment, the aperture size of several first through hole 251 are as follows: one of first through hole 251a Two 251b of=first through hole < first through hole, three 251c, and the aperture size of several second through-holes 252 are as follows: one of second through-hole Three 252c of the through-hole of two 252b < second of the through-hole of 252a=second.

Embodiment 4, as shown in figure 5, being a kind of top view of light-emitting diode chip for backlight unit, be different from place of embodiment 2 and be, In light emitting diode construction described in the present embodiment, the aperture size of several first through hole 251 are as follows: one of first through hole 251a Two 251b of < first through hole=first through hole, three 251c, and the aperture size of several second through-holes 252 are as follows: one of second through-hole Three 252c of the through-hole of two 252b=second of the through-hole of 252a=second.

It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that There is also other identical elements in process, method, article or equipment including the element.

While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims (5)

1. a kind of light-emitting diode chip for backlight unit comprising:

Epitaxial layer, successively includes the first semiconductor layer, luminescent layer, the second semiconductor layer and substrate from top to bottom, and described first The polarity of semiconductor layer and second semiconductor layer is different；

Transparency conducting layer is formed on first semiconductor layer；

Protective layer is formed on the transparency conducting layer；

First electrode, including the first pad and the first extension item, first pad and the first extension item are electrical connected It connects, and the first extension item is formed on the protective layer, the first extension item runs through institute by several first through hole Protective layer is stated, is electrically connected with the transparency conducting layer, the quantity of several first through hole is m, and wherein m is positive whole Number and 20 >=m >=2；

Second electrode is electrically connected with second semiconductor layer；

It is characterized by: the aperture size of several first through hole under the first extension item is different, apart from described the The aperture size of the farther away first through hole of one pad is larger, and apart from the closer first through hole of first pad Aperture size is smaller.

2. a kind of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that: the second electrode includes the second weldering Disk and the second extension item, second pad and the second extension item are electrically connected, and the second extension item is formed In on the protective layer, the second extension item by several second through-holes through the protective layer, the transparency conducting layer, First semiconductor layer and the luminescent layer are electrically connected with second semiconductor layer, and described several are second logical The quantity in hole is n, and wherein n is positive integer and 20 >=n >=2.

3. a kind of light-emitting diode chip for backlight unit according to claim 2, it is characterised in that: described under the second extension item The aperture sizes of several the second through-holes is different, the aperture size apart from farther away second through-hole of second pad compared with Greatly, the aperture size and apart from closer second through-hole of second pad is smaller.

4. a kind of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that: first pad is formed in described On first semiconductor layer, it is electrically connected with first semiconductor layer and the transparency conducting layer.

5. a kind of light-emitting diode chip for backlight unit according to claim 2, it is characterised in that: second pad is formed in described On second semiconductor layer, it is electrically connected with second semiconductor layer.