CN209216991U - A kind of floating junction passivating back crystal silicon battery based on passivation contact - Google Patents
A kind of floating junction passivating back crystal silicon battery based on passivation contact Download PDFInfo
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- CN209216991U CN209216991U CN201822099171.0U CN201822099171U CN209216991U CN 209216991 U CN209216991 U CN 209216991U CN 201822099171 U CN201822099171 U CN 201822099171U CN 209216991 U CN209216991 U CN 209216991U
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- metal electrode
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 94
- 239000010703 silicon Substances 0.000 title claims abstract description 94
- 238000007667 floating Methods 0.000 title claims abstract description 59
- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 238000002161 passivation Methods 0.000 title claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 229920005591 polysilicon Polymers 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000011159 matrix material Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005245 sintering Methods 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of floating junction passivating back crystal silicon batteries based on passivation contact, the crystal silicon battery includes p-type silicon matrix, the tunnel oxide positioned at the p-type silicon matrix back side, the N-shaped polysilicon layer positioned at the tunnel oxide back side, tunnel oxide and N-shaped polysilicon layer constitute floating junction, the predetermined position of floating junction is provided with aperture, further includes: positioned at the N-shaped polysilicon layer back side and the metal electrode that is in contact by aperture with exposed p-type silicon matrix；First medium layer between N-shaped polysilicon layer and metal electrode and in aperture is set.Above-mentioned technical proposal disclosed in the present application, high temperature when can bear to prepare metal electrode due to tunnel oxide and N-shaped polysilicon is without changing, and it will not be destroyed because of high temperature, therefore, high-temperature sintering process can then be reduced on influence brought by floating junction, so as to improve floating junction to the passivation effect of crystal silicon battery.
Description
Technical field
The utility model relates to solar cell inactivating technical fields, more specifically to one kind based on passivation contact
Floating junction passivating back crystal silicon battery.
Background technique
Photovoltaic power generation is widely used due to having the characteristics that reproducibility, spatter property, easily obtaining, wherein as
The solar battery of photovoltaic power generation core devices also becomes the focus of people's research therewith.Currently, solar battery is still with crystal silicon
Battery is mainstream.It in order to improve the photoelectric conversion efficiency of crystal silicon battery, often needs to handle it, wherein passivating back is
Promote one of the important method of crystal silicon battery photoelectric conversion efficiency.A kind of according to University of New South Wales's report uses floating junction
The crystal silicon battery of passivating back is carried out it is found that PERF (Passivated Emitter, Rear Floating p-n
Junction) battery has excellent inactivating performance due to using floating junction, and open-circuit voltage is up to 720mV.
Currently, existing part crystal silicon battery, which is used, carries out the back side based on amorphous silicon/silicon/crystalline silicon heterojunction floating junction
Passivation, still, since the heat treatment temperature of amorphous silicon is generally not above 300 DEG C, and crystal silicon battery is utilizing screen printing dataller
Skill prepares when metal electrode that required sintering temperature is generally at 780 DEG C or so, therefore, when using different based on amorphous silicon/crystal silicon
The floating junction of matter knot is come when carrying out passivating back, high-temperature sintering process can then cause certain destruction to amorphous silicon, and this then can
Certain influence is generated to the passivation effect of floating junction.
In conclusion how to reduce high-temperature sintering process to influence caused by floating junction, to improve floating junction to crystal silicon
The passivation effect of battery is current those skilled in the art technical problem urgently to be resolved.
Utility model content
In view of this, the purpose of the utility model is to provide a kind of floating junction passivating back crystal silicon based on passivation contact is electric
Pond, to reduce high-temperature sintering process to influence caused by floating junction, to improve floating junction to the passivation effect of crystal silicon battery.
To achieve the goals above, the utility model provides the following technical solutions:
It is a kind of based on passivation contact floating junction passivating back crystal silicon battery, including p-type silicon matrix, be located at the p-type silicon
The tunnel oxide at the matrix back side, the N-shaped polysilicon layer positioned at the tunnel oxide back side, the tunnel oxide with it is described
N-shaped polysilicon layer constitutes floating junction, and the predetermined position of the floating junction is provided with aperture, further includes:
It is in contact positioned at the N-shaped polysilicon layer back side and by the aperture with the exposed p-type silicon matrix
Metal electrode；
First medium layer between the N-shaped polysilicon layer and the metal electrode and in the aperture is set.
Preferably, further includes:
Second dielectric layer between the first medium layer and the metal electrode is set.
Preferably, the metal electrode is aluminium electrode.
Preferably, the second dielectric layer is silicon nitride layer, silicon oxynitride layer, any one in silicon oxide layer, thickness
For 50-200nm.
Preferably, the tunnel oxide is silicon oxide layer, with a thickness of 0.1-3nm.
Preferably, the N-shaped polysilicon layer with a thickness of 5-50nm.
Preferably, the first medium layer is silicon oxide layer, with a thickness of 2-20nm.
The utility model provides a kind of floating junction passivating back crystal silicon battery based on passivation contact, the crystal silicon battery packet
Include p-type silicon matrix, the tunnel oxide positioned at the p-type silicon matrix back side, the N-shaped polysilicon layer positioned at the tunnel oxide back side, tunnel
It wears oxide layer and N-shaped polysilicon layer constitutes floating junction, the predetermined position of floating junction is provided with aperture, further includes: it is more to be located at N-shaped
The crystal silicon layer back side and the metal electrode being in contact by aperture with exposed p-type silicon matrix；Setting N-shaped polysilicon layer with
First medium layer between metal electrode and in aperture.
Above-mentioned technical proposal disclosed in the present application using the tunnel oxide for being located at the p-type silicon matrix back side and is located at tunnelling
The N-shaped polysilicon at the oxide layer back side constitutes floating junction, and aperture is arranged in the predetermined position of floating junction, in order to prepared
Metal electrode can be in contact with the exposed p-type silicon matrix in aperture place, and between N-shaped polysilicon and metal electrode,
And first medium layer is set in aperture, to play the role of passivation to N-shaped polysilicon using first medium layer, and avoid metal
Electrode and N-shaped polysilicon contact and generate electric leakage, when can bear to prepare metal electrode due to tunnel oxide and N-shaped polysilicon
High temperature without changing, and will not be destroyed because of high temperature, therefore, then can reduce high-temperature sintering process to floating junction
Brought influence, so as to improve floating junction to the passivation effect of crystal silicon battery.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is a kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model
Structural schematic diagram；
Fig. 2 is another floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model
Structural schematic diagram.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Referring to Figure 1, it illustrates a kind of floating junction back sides based on passivation contact provided by the embodiment of the utility model
Be passivated crystal silicon battery structural schematic diagram, may include p-type silicon matrix 1, positioned at 1 back side of p-type silicon matrix tunnel oxide 5,
N-shaped polysilicon layer 6 positioned at 5 back side of tunnel oxide, tunnel oxide 5 and N-shaped polysilicon layer 6 constitute floating junction, floating junction
Predetermined position be provided with aperture, can also include:
The metal electrode being in contact positioned at 6 back side of N-shaped polysilicon layer and by aperture with exposed p-type silicon matrix 1
7；
First medium layer 8 between N-shaped polysilicon layer 6 and metal electrode 7 and in aperture is set.
Floating junction passivating back crystal silicon battery based on passivation contact is to adulterate the p-type silicon matrix 1 of boron or gallium as base
Area, and using the n+ type silicon 2 positioned at 1 front of p-type silicon matrix and doping P elements as emitter region, to form pn-junction.N+ type silicon 2
Front be dielectric layer 3, the thickness of the dielectric layer 3 can be specifically as follows silicon nitride etc. between 50-100nm, to play
The double action of antireflective and passivation.The front of n+ type silicon 2 is additionally provided with the front electrode 4 that Ohmic contact is formed with n+ type silicon 2,
The front electrode 4 is specifically as follows silver etc..It should be noted that p-type silicon matrix 1 and n+ type silicon 2 can be polysilicon, it can also
Think monocrystalline silicon.
The back side of p-type silicon matrix 1 is provided with tunnel oxide 5, and the back side of tunnel oxide 5 is provided with N-shaped polysilicon layer
6, wherein tunnel oxide 5 and N-shaped polysilicon layer 6 constitute the floating junction based on passivation contact, to realize to p-type silicon matrix 1
Passivating back, and due to tunnel oxide 5 and N-shaped polysilicon layer 6 can with resistance to affected by the high temperature, then can reduce
Electrode production process is influenced to brought by floating junction, so as to improve the passivating back effect of floating junction.The floating junction back side
Predetermined position be provided with aperture, which can expose the p-type silicon matrix 1 at the position so that be located at N-shaped it is more
The metal electrode 7 at 6 back side of crystal silicon layer forms Ohmic contact by the exposed p-type silicon matrix 1 of set aperture and institute, from
And electric current caused by crystal silicon battery inside is guided using metal electrode 7.
First medium layer 8 is provided between N-shaped polysilicon layer 6 and metal electrode 7 and in aperture, wherein first is situated between
Matter layer 8 has insulating properties, can not only play the role of passivation to N-shaped polysilicon layer 6, but also can prevent N-shaped polycrystalline
Silicon layer 6 and metal electrode 7 generate electric leakage because of contact, so as to improve the performance of crystal silicon battery.
Above-mentioned technical proposal disclosed in the present application using the tunnel oxide for being located at the p-type silicon matrix back side and is located at tunnelling
The N-shaped polysilicon at the oxide layer back side constitutes floating junction, and aperture is arranged in the predetermined position of floating junction, in order to prepared
Metal electrode can be in contact with the exposed p-type silicon matrix in aperture place, and between N-shaped polysilicon and metal electrode,
And first medium layer is set in aperture, to play the role of passivation to N-shaped polysilicon using first medium layer, and avoid metal
Electrode and N-shaped polysilicon contact and generate electric leakage, when can bear to prepare metal electrode due to tunnel oxide and N-shaped polysilicon
High temperature without changing, and will not be destroyed because of high temperature, therefore, then can reduce high-temperature sintering process to floating junction
Brought influence, so as to improve floating junction to the passivation effect of crystal silicon battery.
A kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model, can be with
Include:
Second dielectric layer 9 between first medium layer 8 and metal electrode 7 is set.
In view of first medium layer 8 is than relatively thin, therefore, in order to avoid screen printing sizing agent (is prepared used in metal electrode 7
Slurry) when to first medium layer 8 cause corrode and cause first medium layer 8, tunnel oxide 5 and N-shaped polysilicon layer 6 by
It destroys, then second dielectric layer 9 can be set on first medium layer 8, so that second dielectric layer 9 is located at first medium layer 8 and gold
Belong between electrode 7, to play guarantor to first medium layer 8, tunnel oxide 5 and N-shaped polysilicon layer 6 using second dielectric layer 9
The effect of shield.
Referring to fig. 2, it illustrates another floating junction back sides based on passivation contact provided by the embodiment of the utility model
It is passivated the structural schematic diagram of crystal silicon battery.A kind of floating junction back side based on passivation contact provided by the embodiment of the utility model is blunt
Change crystal silicon battery, metal electrode 7 can be aluminium electrode.
The back side positioned at p-type silicon matrix 1 and the metal that is in contact with the exposed p-type silicon matrix 1 in predeterminated position place
Electrode 7 is specifically as follows aluminium electrode.
When using aluminium electrode as when the metal electrode 7 at the crystal silicon battery back side, during silk-screen printing, aluminum slurry is not
It can only be in contact with the exposed p-type silicon matrix 1 in predeterminated position place, to ultimately form aluminium electrode, and in aluminum slurry
Aluminium can also play the role of doping to the exposed p-type silicon matrix 1 in predeterminated position place, thus in predetermined position
The interface of p-type silicon matrix 1 and final prepared aluminium electrode forms p+ type silicon 10.Be formed by p+ type silicon 10 can and p
Type silicon substrate 1 forms height knot (namely local surfaces field), which ties the Carrier recombination that can not only inhibit interface, and
And contact resistance can also be reduced, to improve the performance of crystal silicon battery.
It is of course also possible to using silver electrode etc. as the metal electrode 7 of crystal silicon battery.
A kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model, second is situated between
Matter layer 9 can be any one in silicon nitride layer, silicon oxynitride layer, silicon oxide layer, with a thickness of 50-200nm.
Set second dielectric layer 9 is specifically as follows silicon nitride layer, silicon oxynitride layer, any one in silicon oxide layer
Kind, naturally it is also possible to for silicon nitride layer, silicon oxynitride layer, any a variety of combination in silicon oxide layer, and its thickness can be
Between 50-200nm (including endpoint value), to be played preferably to first medium layer 8, tunnel oxide 5 and N-shaped polysilicon layer 6
Protective effect, to prevent printed slurry from causing corruption to first medium layer 8, tunnel oxide 5 and N-shaped polysilicon layer 6
Erosion.
Wherein it is possible to pass through PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma
Enhance chemical vapor deposition) method deposition second dielectric layer 9, have the characteristics that operating temperature is low, deposition rate is fast, it therefore, can
To reduce the preparation cost of crystal silicon battery, the preparation efficiency of crystal silicon battery is improved.
A kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model, tunnelling oxygen
Changing layer 5 can be silicon oxide layer, and thickness can be 0.1-3nm.
Tunnel oxide 5 is specifically as follows the silicon oxide layer by thermal oxide or wet oxidation formation, can be to crystalline substance
Silion cell plays the role of passivating back.
The thickness for being formed by silicon oxide layer can be between 0.1-3nm (including endpoint value), it is of course also possible to according to reality
Border needs and is adjusted to its thickness.
A kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model, N-shaped are more
The thickness of crystal silicon layer 6 can be 5-50nm.
The thickness of set N-shaped polysilicon layer 6 specifically can be in the range of 5-50nm (including endpoint value), to crystalline substance
Play better passivation effect in the back side of silion cell.
A kind of floating junction passivating back crystal silicon battery based on passivation contact provided by the embodiment of the utility model, first is situated between
Matter layer 8 is silicon oxide layer, and thickness can be 2-20nm.
Be arranged in the first medium layer 8 between N-shaped polysilicon layer 6 and metal electrode 7 and in aperture be specifically as follows through
The silicon oxide layer of thermal oxide or wet oxidation formation is crossed, and its thickness can be in 2-20nm, to rise to N-shaped polysilicon layer 6
To the effect of passivation, and prevent N-shaped polysilicon layer 6 and metal electrode 7 from generating electric leakage because of contact.It is of course also possible to according to reality
Border needs and is adjusted to its thickness.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic.?
Do not have in the case where more limiting, the element limited by sentence "including a ...", it is not excluded that including the element
There is also other identical elements in process, method, article or equipment.In addition, provided by the embodiment of the utility model above-mentioned
In technical solution with correspond to the consistent part of technical solution realization principle and unspecified in the prior art, in order to avoid excessive superfluous
It states.
The foregoing description of the disclosed embodiments makes those skilled in the art can be realized or use the utility model.
Various modifications to these embodiments will be apparent for a person skilled in the art, general original as defined herein
Reason can be realized in other embodiments without departing from the spirit or scope of the present utility model.Therefore, this is practical new
Type is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase
Consistent widest scope.
Claims (7)
1. a kind of floating junction passivating back crystal silicon battery based on passivation contact, which is characterized in that including p-type silicon matrix, be located at
The tunnel oxide at the p-type silicon matrix back side, the N-shaped polysilicon layer positioned at the tunnel oxide back side, the tunnelling oxygen
Change layer and the N-shaped polysilicon layer constitute floating junction, the predetermined position of the floating junction is provided with aperture, further includes:
Positioned at the N-shaped polysilicon layer back side and the gold that is in contact by the aperture with the exposed p-type silicon matrix
Belong to electrode；
First medium layer between the N-shaped polysilicon layer and the metal electrode and in the aperture is set.
2. the floating junction passivating back crystal silicon battery according to claim 1 based on passivation contact, which is characterized in that also wrap
It includes:
Second dielectric layer between the first medium layer and the metal electrode is set.
3. the floating junction passivating back crystal silicon battery according to claim 2 based on passivation contact, which is characterized in that described
Metal electrode is aluminium electrode.
4. the floating junction passivating back crystal silicon battery according to claim 2 based on passivation contact, which is characterized in that described
Second dielectric layer is silicon nitride layer, silicon oxynitride layer, any one in silicon oxide layer, with a thickness of 50-200nm.
5. the floating junction passivating back crystal silicon battery according to claim 1 based on passivation contact, which is characterized in that described
Tunnel oxide is silicon oxide layer, with a thickness of 0.1-3nm.
6. the floating junction passivating back crystal silicon battery according to claim 5 based on passivation contact, which is characterized in that described
N-shaped polysilicon layer with a thickness of 5-50nm.
7. the floating junction passivating back crystal silicon battery according to claim 6 based on passivation contact, which is characterized in that described
First medium layer is silicon oxide layer, with a thickness of 2-20nm.
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| CN201822099171.0U CN209216991U (en) | 2018-12-13 | 2018-12-13 | A kind of floating junction passivating back crystal silicon battery based on passivation contact |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109494274A (en) * | 2018-12-13 | 2019-03-19 | 苏州腾晖光伏技术有限公司 | Floating junction passivating back crystal silicon battery and preparation method thereof based on passivation contact |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109494274A (en) * | 2018-12-13 | 2019-03-19 | 苏州腾晖光伏技术有限公司 | Floating junction passivating back crystal silicon battery and preparation method thereof based on passivation contact |
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