CN209199951U - A kind of hetero-junctions MWT double-sided solar battery piece - Google Patents
A kind of hetero-junctions MWT double-sided solar battery piece Download PDFInfo
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- CN209199951U CN209199951U CN201822170678.0U CN201822170678U CN209199951U CN 209199951 U CN209199951 U CN 209199951U CN 201822170678 U CN201822170678 U CN 201822170678U CN 209199951 U CN209199951 U CN 209199951U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of hetero-junctions MWT double-sided solar battery piece, the cell piece substrate including punching, and substrate front surface and the back side are equipped with one layer of intrinsic amorphous silicon passivation layer；The intrinsic amorphous silicon passivation layer of the substrate front surface is equipped with the doped layer of P doped amorphous silicon, and the intrinsic amorphous silicon passivation layer of backside of substrate is equipped with the doped layer of N doped amorphous silicon；TCO thin film is equipped on the doped layer of the P doped amorphous silicon and the doped layer of N doped amorphous silicon；Slot is provided with around the hole at the cell piece back side, the bottom of slot is backside of substrate；Plug-hole silver paste is filled in hole, the hole at the cell piece back side corresponds to rear electrode point, and the positive hole of cell piece corresponds to front electrode point；Cell piece front TCO thin film is equipped with positive silver grating line, and cell piece back side TCO thin film is equipped with back silver grating line；The cell piece back side is equipped with the strip insulation glue-line for the back silver grating line and welding that insulate, and the insulating cement for the glue-line that insulate is filled in the slot around the hole of the cell piece back side.
Description
Technical field
The utility model relates to a kind of hetero-junctions MWT double-sided solar battery pieces, the hetero-junctions electricity suitable for low temperature process
Pond.
Background technique
Hetero-junctions double-side cell is the direction of the following more efficient photovoltaic products, has high conversion efficiency, high two-sidedness, nothing
PID and LID, low-temperature coefficient, dim light are good, are suitble to the advantage of sheet.Back-contact MWT solar cell is instantly mature high
The Typical Representative of photovoltaic products is imitated, has low cost, high efficiency, component typesetting density big, the high advantage of component power.
Conventional MWT solar battery needs to be attached by conducting resinl and copper-foil conducting electricity, and copper-foil conducting electricity can block back
Face incident light, the advantage for seriously affecting double-side cell and component plays, so needing to develop a kind of hetero-junctions MWT double-sided solar
Cell piece.
Existing hetero-junction solar cell, designed with H-type based on, rarely have and combined with MWT, main cause is as follows:
1, HJT can be with double-sided design, and double-sided design battery generally uses welding technique in assembly end；
2, MWT mature technology is conductive circuit board technique, and conductive circuit board technique, which will cause, blocks most back sides and enter
Penetrate the defect of light；
3, welding procedure is on hetero-junctions MWT, tending to cause back side positive and negative electrode to be connected.
Utility model content
Purpose of utility model: aiming at the problems existing in the prior art with deficiency, the utility model provides a kind of hetero-junctions
MWT double-sided solar battery piece, battery use asymmetric design, second battery are rotated, so that the positive and negative electrode of adjacent cell
In the same line, welding welding adjacent cell back side positive and negative electrode technical substitution copper-foil conducting electricity interconnection technique is reused, and then will
Two-sided hetero-junctions combines with MWT, improves the comprehensive electric generating ability of component, reduces single watt of cost of electricity-generating.
Technical solution: a kind of hetero-junctions MWT double-sided solar battery piece, the cell piece substrate including punching, substrate front surface
One layer of intrinsic amorphous silicon passivation layer is equipped with the back side；It is non-that the intrinsic amorphous silicon passivation layer of the substrate front surface is equipped with P doping
The doped layer of crystal silicon, the intrinsic amorphous silicon passivation layer of backside of substrate are equipped with the doped layer of N doped amorphous silicon；The P doping is non-
TCO thin film is equipped on the doped layer of crystal silicon and the doped layer of N doped amorphous silicon；It is provided with around the hole at the cell piece back side
Slot, the bottom of slot are backside of substrate；Plug-hole silver paste is filled in hole, the hole at the cell piece back side corresponds to rear electrode point, cell piece
Positive hole corresponds to front electrode point；Cell piece front TCO thin film is equipped with positive silver grating line, in the TCO thin film of the cell piece back side
Equipped with back silver grating line；The cell piece back side is equipped with the strip insulation glue-line for the back silver grating line and welding that insulate, and the glue-line that insulate
Insulating cement is filled in the slot around the hole of the cell piece back side.When the cell piece of component is connect with cell piece by welding, welding
It is located on strip insulation glue-line.
Ring shape slot is provided with around the hole at the cell piece back side, the diameter of ring shape slot is 2~10mm.Slot is not limited to
Ring shape, can be square groove or rectangular and annular combination, and size needs the diameter greater than back side hole.
The cell piece substrate is N-type substrate.
The cell piece back up for being provided with the hole N × N has N number of strip insulation glue-line, N >=4, each strip insulation glue-line printing
Overleaf in electrode points TCO thin film of the row, for carrying on the back the insulation of silver grating line and welding.
The utility model has the advantages that compared with prior art, hetero-junctions MWT double-sided solar battery piece provided by the utility model,
Only in cell piece back up multiple tracks strip insulation glue, so that welding be made not contact the back side when connecting plug-hole ag paste electrode point
Grid line realizes the insulation of back silver grating line and welding；It realizes that hetero-junctions is two-sided perfectly to be combined with MWT at lower cost, improves
The comprehensive electric generating ability of solar cell.
Detailed description of the invention
Fig. 1 is the interfacial structure schematic diagram of the utility model embodiment；
Fig. 2 is the main view of the utility model embodiment.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the utility model is furtherd elucidate.
As shown in Figs. 1-2, embodiment 1: a kind of hetero-junctions MWT double-sided solar battery piece, the cell piece N including punching 6
Type substrate 1,1 front and back of substrate are equipped with one layer of intrinsic amorphous silicon passivation layer 2；The passivation of the positive intrinsic amorphous silicon of substrate 1
Layer 2 is equipped with the doped layer 3 of P doped amorphous silicon, and the intrinsic amorphous silicon passivation layer 2 at 1 back side of substrate is equipped with N doped amorphous silicon
Doped layer 4；TCO thin film 5 is equipped on the doped layer 3 of P doped amorphous silicon and the doped layer 4 of N doped amorphous silicon；The cell piece back side
6 hole of hole around be provided with slot 7, the bottom of slot 7 is 1 back side of substrate；6 silver paste of plug-hole, 6 hole of hole at the cell piece back side are filled in hole 6
Corresponding rear electrode point 8, positive 6 hole of hole of cell piece corresponds to front electrode point 9；Cell piece front TCO thin film 5 is equipped with positive silver
Grid line 10, cell piece back side TCO thin film 5 are equipped with back silver grating line 11；The cell piece back side be equipped with for insulate back silver grating line 11 with
The strip insulation glue-line 12 of welding, and the insulating cement for the glue-line 12 that insulate is filled in the slot 7 around 6 hole of cell piece back side hole.Electricity
Slot 7 around 6 hole of pond piece back side hole is ring shape slot 7, and the diameter of ring shape slot 7 is 10mm.
The cell piece back up for being provided with the hole N × N 6 has N number of strip insulation glue-line 12, N >=4, each strip insulation glue-line
12 are printed in the TCO thin film 5 of the row of rear electrode point 8, for carrying on the back the insulation of silver grating line 11 and welding.
Such as, being provided with the cell piece back up in 4 × 4 holes 6, there are four strip insulation glue-line 12, each strip insulation glue-lines 12
It is printed in the TCO thin film 5 of the row of rear electrode point 8, for carrying on the back the insulation of silver grating line 11 and welding.
Such as, being provided with the cell piece back up in 5 × 5 holes 6, there are five strip insulation glue-line 12, each strip insulation glue-lines 12
It is printed in the TCO thin film 5 of the row of rear electrode point 8, for carrying on the back the insulation of silver grating line 11 and welding.
Such as, being provided with the cell piece back up in 6 × 6 holes 6, there are six strip insulation glue-line 12, each strip insulation glue-lines 12
It is printed in the TCO thin film 5 of the row of rear electrode point 8, for carrying on the back the insulation of silver grating line 11 and welding.
The manufacture craft of hetero-junctions MWT double-sided solar battery piece is as follows:
(1) by taking N-type wafer makees substrate 1 as an example；
(2) 4 × 4 or 5 × 5 or 6 × 6 laser holes are made a call in wafer according to actual needs；
(3) N-type Wafer is subjected to making herbs into wool cleaning: damaging layer and making herbs into wool in removal surface and 6 hole of hole；
(4) positive passivation, plating front P doped amorphous silicon are played in sequentially plating front intrinsic amorphous silicon (i- α-Si:H)
(p- α-Si:H) forms built in field；
(5) passivating back, plating back side N doped amorphous silicon are played the role of in sequentially plating back side intrinsic amorphous silicon (i- α-Si:H)
(p- α-Si:H) forms back electric field；
(6) positive back side TCO (transparent conductive oxide) film 5 is plated, conductive layer is formed；
(7) laser insulate: to make positive insulating backside, using laser by 6 hole surrounding of back side hole slot 7.7 depth of slotting with
Just removing the amorphous silicon layer at the back side and TCO is advisable, more to be easy to cause damage, has lacked and has be easy to cause insulation effect bad；Slot 7
Size needs the diameter greater than 6 hole of back side hole, and 7 sizes of fluting are advisable with the circle of 2~10mm size diameter；
(8) printed back low temperature silver paste solidifies with filling perforation slurry and at 200 DEG C, forms back electrode and back plug-hole silver paste electricity
Pole
(9) it prints low-temperature setting insulation paste (such as polyimide polymer and epoxy) and solid at 200 DEG C
Change, forms strip insulation glue-line 12；
(10) the positive silver of printing front low temperature forms positive electrode；
(11) 30~60min is sintered at 200 DEG C or less.
Embodiment 2: same as Example 1, area's otherwise is that the intrinsic amorphous silicon passivation layer of substrate front surface is equipped with N
The doped layer 4 of doped amorphous silicon, the intrinsic amorphous silicon passivation layer of backside of substrate are equipped with the doped layer 3 of P doped amorphous silicon,.
(1) by taking N-type wafer makees substrate as an example；
(2) 4 × 4 or 5 × 5 or 6 × 6 laser holes are made a call in wafer according to actual needs；
(3) N-type Wafer is subjected to making herbs into wool cleaning: damaging layer and making herbs into wool in removal surface and 6 hole of hole；
(4) positive passivation, plating front N doped amorphous silicon are played in sequentially plating front intrinsic amorphous silicon (i- α-Si:H)
(n- α-Si:H) forms built in field；
(5) passivating back, plating back side P doped amorphous silicon are played the role of in sequentially plating back side intrinsic amorphous silicon (i- α-Si:H)
(p- α-Si:H) forms back electric field；
(6) positive back side TCO (transparent conductive oxide) film 5 is plated, conductive layer is formed；
(7) laser insulate: to make positive insulating backside, using laser by back side hole surrounding slot 7.7 depth of slotting with
Just removing the amorphous silicon layer at the back side and TCO is advisable, more to be easy to cause damage, has lacked and has be easy to cause insulation effect bad；It opens
Slot size is advisable with the circle of 2~10mm size diameter；
(8) printed back filling perforation slurry and solidification and sintering at 200 DEG C；
(9) exposure mask printing is carried out according to positive back side grid line design；
(10) electrode fabrication is carried out using photoinduction electroplating technology；
(11) exposure mask is removed, battery production is completed；
Step (2) can also be after step (3) (5) (6) (7).
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
It for art personnel, without departing from the principle of this utility model, can also make several improvements, these improvement also should be regarded as
The protection scope of the utility model.
Claims (6)
1. a kind of hetero-junctions MWT double-sided solar battery piece, it is characterised in that: the cell piece substrate including punching, substrate front surface
One layer of intrinsic amorphous silicon passivation layer is equipped with the back side；It is non-that the intrinsic amorphous silicon passivation layer of the substrate front surface is equipped with P doping
The doped layer of crystal silicon, the intrinsic amorphous silicon passivation layer of backside of substrate are equipped with the doped layer of N doped amorphous silicon；The P doping is non-
TCO thin film is equipped on the doped layer of crystal silicon and the doped layer of N doped amorphous silicon；It is provided with around the hole at the cell piece back side
Slot, the bottom of slot are backside of substrate；Plug-hole silver paste is filled in hole, the hole at the cell piece back side corresponds to rear electrode point, cell piece
Positive hole corresponds to front electrode point；Cell piece front TCO thin film is equipped with positive silver grating line, in the TCO thin film of the cell piece back side
Equipped with back silver grating line；The cell piece back side is equipped with the strip insulation glue-line for the back silver grating line and welding that insulate, and the glue-line that insulate
Insulating cement is filled in the slot around the hole of the cell piece back side.
2. hetero-junctions MWT double-sided solar battery piece as described in claim 1, it is characterised in that: the cell piece back side
Ring shape slot is provided with around hole, the diameter of ring shape slot is greater than hole diameter.
3. hetero-junctions MWT double-sided solar battery piece as described in claim 1, it is characterised in that: the cell piece substrate is N
Type substrate.
4. hetero-junctions MWT double-sided solar battery piece as described in claim 1, it is characterised in that: be provided with the battery in the hole N × N
Piece back up has N number of strip insulation glue-line, N >=4, and each strip insulation glue-line is printed on rear electrode point TCO of the row
On film, for carrying on the back the insulation of silver grating line and welding.
5. hetero-junctions MWT double-sided solar battery piece as described in claim 1, it is characterised in that: the sheet of the substrate front surface
The doped layer that amorphous silicon passivation layer is equipped with N doped amorphous silicon is levied, the intrinsic amorphous silicon passivation layer of backside of substrate is adulterated equipped with P
The doped layer of amorphous silicon.
6. hetero-junctions MWT double-sided solar battery piece as described in claim 1, it is characterised in that: be provided with around described hole
Square groove, square groove become greater than hole diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201822170678.0U CN209199951U (en) | 2018-12-24 | 2018-12-24 | A kind of hetero-junctions MWT double-sided solar battery piece |
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| CN201822170678.0U CN209199951U (en) | 2018-12-24 | 2018-12-24 | A kind of hetero-junctions MWT double-sided solar battery piece |
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| CN209199951U true CN209199951U (en) | 2019-08-02 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113707647A (en) * | 2021-11-01 | 2021-11-26 | 南京日托光伏新能源有限公司 | Preparation method of perovskite/MWT heterojunction series-parallel composite battery |
| CN113851562A (en) * | 2021-12-01 | 2021-12-28 | 南京日托光伏新能源有限公司 | Preparation method of weldable double-sided battery suitable for heterojunction MWT |
| CN113889555A (en) * | 2021-12-06 | 2022-01-04 | 南京日托光伏新能源有限公司 | Preparation method of MWT heterojunction solar cell |
| CN114937717A (en) * | 2022-05-30 | 2022-08-23 | 江苏日托光伏科技股份有限公司 | Preparation method of perovskite-HBC laminated double-sided battery |
-
2018
- 2018-12-24 CN CN201822170678.0U patent/CN209199951U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113707647A (en) * | 2021-11-01 | 2021-11-26 | 南京日托光伏新能源有限公司 | Preparation method of perovskite/MWT heterojunction series-parallel composite battery |
| CN113707647B (en) * | 2021-11-01 | 2022-01-28 | 南京日托光伏新能源有限公司 | Preparation method of perovskite/MWT heterojunction series-parallel composite battery |
| CN113851562A (en) * | 2021-12-01 | 2021-12-28 | 南京日托光伏新能源有限公司 | Preparation method of weldable double-sided battery suitable for heterojunction MWT |
| CN113889555A (en) * | 2021-12-06 | 2022-01-04 | 南京日托光伏新能源有限公司 | Preparation method of MWT heterojunction solar cell |
| CN114937717A (en) * | 2022-05-30 | 2022-08-23 | 江苏日托光伏科技股份有限公司 | Preparation method of perovskite-HBC laminated double-sided battery |
| CN114937717B (en) * | 2022-05-30 | 2023-09-01 | 江苏日托光伏科技股份有限公司 | perovskite-HBC laminated double-sided battery preparation method |
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