CN209199949U - A kind of solar battery with enhancing anti-reflection effect - Google Patents
A kind of solar battery with enhancing anti-reflection effect Download PDFInfo
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- CN209199949U CN209199949U CN201821570727.3U CN201821570727U CN209199949U CN 209199949 U CN209199949 U CN 209199949U CN 201821570727 U CN201821570727 U CN 201821570727U CN 209199949 U CN209199949 U CN 209199949U
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Abstract
The utility model discloses a kind of solar batteries with enhancing anti-reflection effect, including silicon wafer substrate, at least two layers of the single side or double-sided deposition antireflective coating with identical or different film thickness of silicon wafer substrate.The utility model deposited multilayer antireflective coating with different thickness by the surface in solar battery, not only increase the anti-reflection property of antireflective coating by multiple reflections and refraction, and improve solar battery in the anti-reflection property of the entire spectral regions absorbed.MgF has been used simultaneously2The anti-reflection property of film, so that solar battery obtains more preferably anti-reflective effect, to promote the photoelectric conversion efficiency of solar battery.
Description
Technical field
The utility model belongs to area of solar cell, and in particular to a kind of solar-electricity with enhancing anti-reflection effect
Pond.
Background technique
For solar battery, sunlight is incident on cell piece surface, and the light for reflecting escape is fewer, and transformation efficiency is just
It can be higher.The anti-reflection shooting method of solar battery blade technolgy is first to carry out making herbs into wool at present, forms rough flannelette, then in table
Face plates one layer of silicon nitride film, carries out antireflective.Its antireflective film principle used is plated one layer of refractive index in silicon chip surface and is lower than
The silicon nitride film of silicon wafer, the optical thickness of silicon nitride film, i.e. film thickness are a quarter of optical wavelength multiplied by refractive index, that
The optical path difference of incident light and reflected light is the half of optical wavelength, i.e., direction of vibration is on the contrary, Overlay makes silicon chip surface
The reflection of light is reduced, to achieve the effect that antireflective.
Since the silicon nitride film of setting in solar cells is monofilm, and solar battery absorbing wavelength range is
350-1100nm, therefore ideal antireflective effect is extremely difficult to as antireflective film using single-layer silicon nitride silicon thin film, it is unable to satisfy too
It is positive can cell piece absorbent whole solar light wave reflection.In order to realize zero reflection in Single wavelength, or wider
The antireflective effect that spectral regions have reached, often using double-deck, three layers of even more numbers of plies the antireflective coating.And therefore this is practical
A kind of solar battery with enhancing anti-reflection effect of new design.
Utility model content
In view of the above-mentioned problems, the utility model proposes a kind of solar batteries with enhancing anti-reflection effect.
It realizes above-mentioned technical purpose, reaches above-mentioned technical effect, the utility model is achieved through the following technical solutions:
A kind of solar battery with enhancing anti-reflection effect, including silicon wafer substrate, in the single side of silicon wafer substrate or double
Face deposits at least two layers antireflective coating with identical or different film thickness.
The antireflective coating includes the SiNx for being deposited on silicon wafer substrate surface as a further improvement of the utility model,
Film layer and the MgF being deposited on SiNx film surface2Film layer.
The SiNx film layer or the MgF as a further improvement of the utility model,2Film layer be monofilm or
Multilayer film.
It is located at the MgF of silicon wafer substrate tow sides as a further improvement of the utility model,2The number of film layer it is identical or
Person is different, positioned at ipsilateral MgF2The film thickness of film layer is different, the MgF positioned at two sides2The film thickness of film layer is identical or not
Together.
It is identical positioned at the total film thickness of the SiNx film layer of silicon wafer substrate tow sides as a further improvement of the utility model,
Or it is different.
The optical thickness of the antireflective coating is equal to solar battery and is inhaled as a further improvement of the utility model,
The a quarter of the sunlight wavelength of receipts.The optical thickness of the antireflective coating as a further improvement of the utility model,
Equal to a quarter for the sunlight wavelength that solar battery is absorbed.
As a further improvement of the utility model, further include or do not include it is this silicon wafer substrate and SiNx film layer it
Between AL2O3Film layer.
The utility model has the beneficial effects that the utility model, which deposited multilayer by the surface in solar battery, to be had not
The antireflective coating of stack pile not only increases the anti-reflection property of antireflective coating by multiple reflections and refraction, and improves the sun
Anti-reflection property of the energy battery in the entire spectral regions absorbed.MgF has been used simultaneously2The anti-reflection property of film, so that solar battery
More preferably anti-reflective effect is obtained, to promote the photoelectric conversion efficiency of solar battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the first embodiment of double-sided solar battery made by the utility model；
Fig. 2 is the structural schematic diagram of second of embodiment of double-sided solar battery made by the utility model；
Fig. 3 is the structural schematic diagram of the third embodiment of double-sided solar battery made by the utility model；
Fig. 4 is the structural schematic diagram of the 4th kind of embodiment of double-sided solar battery made by the utility model；
Wherein: 1- silicon wafer substrate, 2-SiNx film layer, 3-MgF2Film layer, 4-AL2O3Film layer.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, with reference to embodiments, to this
Utility model is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain that this is practical
It is novel, it is not used to limit the utility model.
The application principle of the utility model is explained in detail with reference to the accompanying drawing.
Solar battery as shown in Figure 1, including silicon wafer substrate 1 are single side batteries according to made solar battery
Or double-side cell is at least two layers of the single side or double-sided deposition antireflective with identical or different film thickness of silicon wafer substrate 1
Film.
In order to enhance the effect of reflection of the antireflective coating to incident ray, not only pass through in the implementation process of the utility model
The number of plies for increasing antireflective coating enables the incident light injected in antireflective coating to reach multiple reflections, to meet solar energy
Battery also uses MgF to absorbing this antireflective effect compared with the incident light of the different wavelength in wide spectral range2
Material is as antireflective coating.The antireflective coating with multi-layer structure of the utility model production includes being deposited on 1 table of silicon wafer substrate
SiNx film layer 2 while face with H passivation and the MgF being deposited on 2 surface of SiNx film layer2Film layer 3.Compared to SiNx
2.03-2.16 refractive index, MgF2Refractive index be 1.38, between SiNx and air, by MgF2Film layer 3 is designed in SiNx
On the one hand 2 outer layer of film layer utilizes MgF2The characteristics of low-refraction, by increasing reflection and refraction to light, increases the suction of light
It receives；On the other hand MgF of the design in outer layer2Film layer 3 does not influence the original hydrogen passivation effect of SiNx film layer 2 without influence, final energy
Enough reach good anti-reflective effect.Therefore it using vacuum evaporation or is splashed in the utility model according to the wavelength of required absorption spectrum
Penetrating in the deposited SiNx film layer 2 of sedimentation deposited at least one layer of MgF2Film layer 3.
In the utility model, further includes or do not include this AL between silicon wafer substrate 1 and SiNx film layer 22O3Film layer
4。
When made solar battery is double-side cell, the MgF of 1 tow sides of silicon wafer substrate is set2Film layer 3
Number can be identical, be also possible to different.But for ipsilateral MgF is arranged in2Film layer 3, the film thickness of each layer is respectively not
Together, at the same be located at two sides the MgF2The film thickness of film layer 3 is same or different, to adapt to installed ambient intensity
Demand.
Similarly, for double-side cell, positioned at the film thickness of the SiNx film layer 2 of 1 tow sides of silicon wafer substrate it is identical or
It is different.
By the principle with antireflective film, the optical thickness design value of the antireflective coating is equal to solar battery and is inhaled
The film thickness for all film layers that a quarter of the sunlight wavelength of receipts, the i.e. antireflective coating are included and the product of refractive index
With a quarter for being equal to sunlight wavelength.It can be designed on the basis of any wavelength in solar battery absorption spectrum area,
The utility model is also to be designed on the basis of the central wavelength in solar battery absorption spectrum area.It is specific that see Table 1 for details:
Note: the film thickness data and MgF of the SiNx film layer in table 12The film thickness data of film layer can be the film thickness of single layer,
It can be the summation of multilayer film thickness.
Embodiment more than, the photoelectric conversion efficiency of made double-sided solar battery minimum positive 21.9%,
The back side 19.85% has multilayer using the utility model compared to existing highest front 21.7%, the conversion ratio at the back side 19.7%
The photoelectric conversion rate front of the solar battery of antireflective coating at least improves 0.2%, and the back side at least improves 0.15%.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (6)
1. a kind of solar battery with enhancing anti-reflection effect, including silicon wafer substrate (1), it is characterised in that: in silicon wafer substrate
(1) single side or at least two layers of the double-sided deposition antireflective coating with identical or different film thickness；The antireflective coating includes
The MgF for being deposited on the SiNx film layer (2) on silicon wafer substrate (1) surface and being deposited on SiNx film layer (2) surface2Film layer (3).
2. a kind of solar battery with enhancing anti-reflection effect according to claim 1, it is characterised in that: described
SiNx film layer (2) or the MgF2Film layer (3) is monofilm or multilayer film.
3. a kind of solar battery with enhancing anti-reflection effect according to claim 2, it is characterised in that: be located at silicon wafer
The MgF of substrate (1) tow sides2The number of film layer (3) is same or different, positioned at ipsilateral MgF2The film thickness of film layer (3) is not
Together, positioned at the MgF on two sides2The film thickness of film layer (3) is same or different.
4. a kind of solar battery with enhancing anti-reflection effect according to claim 2, it is characterised in that: be located at silicon wafer
The film thickness that the SiNx film layer (2) of substrate (1) tow sides is total is same or different.
5. a kind of solar battery with enhancing anti-reflection effect according to claim 1, it is characterised in that: described subtracts
The optical thickness of reflectance coating is equal to a quarter for the sunlight wavelength that solar battery is absorbed.
6. it is according to claim 1 it is a kind of with enhancing anti-reflection effect solar battery, it is characterised in that: further include or
Person does not include this AL between silicon wafer substrate (1) and SiNx film layer (2)2O3Film layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821570727.3U CN209199949U (en) | 2018-09-26 | 2018-09-26 | A kind of solar battery with enhancing anti-reflection effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821570727.3U CN209199949U (en) | 2018-09-26 | 2018-09-26 | A kind of solar battery with enhancing anti-reflection effect |
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| CN209199949U true CN209199949U (en) | 2019-08-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114277343A (en) * | 2020-09-28 | 2022-04-05 | 天津工业大学 | Broadband high-transmittance Al2O3/MgF2Preparation method of double-layer antireflection film |
-
2018
- 2018-09-26 CN CN201821570727.3U patent/CN209199949U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114277343A (en) * | 2020-09-28 | 2022-04-05 | 天津工业大学 | Broadband high-transmittance Al2O3/MgF2Preparation method of double-layer antireflection film |
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Effective date of registration: 20230815 Granted publication date: 20190802 |