CN209178291U - A kind of diamond film that microwave plasma CVD is formed - Google Patents
A kind of diamond film that microwave plasma CVD is formed Download PDFInfo
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- CN209178291U CN209178291U CN201821457308.9U CN201821457308U CN209178291U CN 209178291 U CN209178291 U CN 209178291U CN 201821457308 U CN201821457308 U CN 201821457308U CN 209178291 U CN209178291 U CN 209178291U
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Abstract
The utility model discloses the diamond films that a kind of microwave plasma CVD is formed, the diamond film includes release layer, first optical adhesive layer, electrostatic resistant transparent PET film layer, diamond layer, heat-conducting glue layer, transparent PET film layer and printed coating, the electrostatic resistant transparent PET film layer is fixed on release layer by the first optical adhesive layer, the diamond layer is set up directly on electrostatic resistant transparent PET film layer by microwave plasma CVD technique, the transparent PET film layer is arranged on diamond layer by PU glue-line, the printed coating is arranged in transparent PET film layer.The utility model substantially increases mobile phone, tablet computer, the protection film strength on the electronic products such as LED illumination, and can carry out that ink printing, printing are securely high, and antistatic effect and aesthetics are all very good.
Description
Technical field
The utility model relates to a kind of diamond films, and in particular to what a kind of microwave plasma CVD was formed
Diamond film.
Background technique
Diamond is the ideal material of thermal management applications, which is electrical insulator, and thermal conductivity is higher by four times than copper.
It is to be applied in the sensitive electronic components of telecommunications industry as heat sink material earliest.It has been widely used in field of heat management.With
Diamond in heat sink field must have high heat conductance, and this requires the diamond of preparation is pure, defect is few, area is big,
Also require have higher growth rate to reduce production cost simultaneously.Due to the own advantages of MPCVD, determine that it is industrial
Prepare the ideal method of heat sink diamond.With MPCVD method prepare diamond film thermal conductivity with the difference of depositing operation and one
As between 5~26W/ (cmK).Currently, using MPCVD diamond heat-sink (cooling fin) high power semiconductor lasers
Through in optic communication, laser diode, power transistor, in terms of have application.
MPCVD (microwave plasma CVD) diamond is the microwave waveguide for generating microwave generator
Enter reactor through isolator, and be passed through the mixed gas of CH4 and H2, under the excitation of microwave, aura is generated in reaction chamber
Electric discharge makes the molecule ionization of reaction gas, generates plasma, and deposition obtains diamond film on substrate.
Due to being free of any metallic catalyst in MPCVD diamond, its thermal stability is close to natural diamond.Together
The artificial synthesized polycrystalline diamond of high temperature and pressure is the same, and MPCVD diamond crystals are also in disorderly arranged, no brittle cleavage face, therefore
Isotropism is presented.
Due to the high rigidity, high-wearing feature, thermal conductivity of diamond it is good so that diamond thin become splendid tool materials,
And there is presently no diamond film is applied to mobile phone, tablet computer, on the electronic products such as LED illumination.
Utility model content
The utility model to solve the above-mentioned problems, to provide what a kind of microwave plasma CVD was formed
Diamond film.
In order to achieve the above objectives, the technical solution of the utility model is as follows:
The diamond film that a kind of microwave plasma CVD is formed, the diamond film include release layer, the
One optical adhesive layer, electrostatic resistant transparent PET film layer, diamond layer, heat-conducting glue layer, transparent PET film layer and printed coating, it is described resist it is quiet
Electric transparent PET film layer is fixed on release layer by the first optical adhesive layer, and the diamond layer passes through microwave plasma chemical
Gas-phase deposition is set up directly on electrostatic resistant transparent PET film layer, and the transparent PET film layer is arranged by PU glue-line in Buddha's warrior attendant
In rock layers, the printed coating is arranged in transparent PET film layer.
In a preferred embodiment of the utility model, the release layer with a thickness of 0.01mm~0.03mm.
In a preferred embodiment of the utility model, the electrostatic resistant transparent PET film layer with a thickness of 0.2mm~
0.5mm。
In a preferred embodiment of the utility model, the diamond layer with a thickness of 0.1mm~0.5mm.
In a preferred embodiment of the utility model, the transparent PET film layer with a thickness of 0.05mm~0.08mm.
In a preferred embodiment of the utility model, the printed coating is ink printing layer.
In a preferred embodiment of the utility model, first optical adhesive layer with a thickness of 0.01mm~
0.02mm。
In a preferred embodiment of the utility model, the heat-conducting glue layer is made of heat conductive silica gel, the heat-conducting glue
Layer with a thickness of 0.005mm~0.01mm.
The beneficial effects of the utility model are:
The utility model substantially increases mobile phone, tablet computer, the protection film strength on the electronic products such as LED illumination,
And ink printing, printing securely height can be carried out, antistatic effect and aesthetics are all very good.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the utility model.
Specific embodiment
In order to be easy to understand the technical means, creative features, achievement of purpose, and effectiveness of the utility model, under
Face combines and is specifically illustrating, and the utility model is further described.
Referring to Fig. 1, the diamond film of microwave plasma CVD formation provided by the utility model comprising
It is release layer 100, the first optical adhesive layer 200, electrostatic resistant transparent PET film layer 300, diamond layer 400, heat-conducting glue layer 500, transparent
PET film layer 600 and printed coating 700.
Release layer 100, with a thickness of 0.01mm~0.03mm, corresponding object can be directly bonded in by being easy for the application
On.
First optical adhesive layer 200 is 0.01mm~0.02mm, is easy for electrostatic resistant transparent PET film layer 300 and is fixed on
On release layer 100.
Electrostatic resistant transparent PET film layer 300 is fixed on release layer 100 by the first optical adhesive layer 200, with a thickness of
0.2mm~0.5mm is to be used to form diamond layer 400, and its high temperature resistance that the application also can be improved, antistatic
Performance, light transmittance and corrosion resistance.
Diamond layer 400 is straight by microwave plasma CVD technique with a thickness of 0.1mm~0.5mm
It connects and is arranged on electrostatic resistant transparent PET film layer 300, be used to improve the integral strength of the application, so that after the application is knocked
It is not easily broken, and also improve the heating conduction and insulation performance of the application.
In addition, a silicon nitride layer 410 can be also first set between diamond layer 400 and electrostatic resistant transparent PET film layer 300,
Silicon nitride layer 410 is molded over electrostatic resistant transparent PET film layer 300 especially by chemical vapor deposition process, then diamond layer 400
Again by microwave plasma CVD technological forming on silicon nitride layer 410, can be improved in this way diamond layer 400 with
Connectivity robustness between electrostatic resistant transparent PET film layer 300, prevents diamond layer 400 from falling off.
Heat-conducting glue layer 500 is made with a thickness of 0.005mm~0.01mm of heat conductive silica gel, is easy for transparent PET film
The bonding of layer 600 and the heating conduction for further increasing the application.
In addition, being equipped with palladium layers 420 between diamond layer 400 and heat-conducting glue layer 500, palladium layers 420 pass through chemical vapor deposition
Product technique is molded directly on diamond layer 400, and the connection that can be improved between diamond layer 400 and heat-conducting glue layer 500 in this way is strong
Degree, and also further improve heating conduction.
In addition, the first PO film layer 510, the first PU can be successively arranged between heat-conducting glue layer 500 and transparent PET film layer 600
Glue-line 520, the 2nd PO film layer 530, the 2nd PU glue-line 540, the 3rd PO film layer 550 and the 3rd PU glue-line 560.
The application is fixed as one between the PO film after layering by the way that PO film is used layered structure by PU glue sticking,
Anti-corrosion effects are more preferable after PO film after being fixed as one can cooperate with electrostatic resistant transparent PET film layer 300, and also improve resistance to height
Warm nature energy.
In addition, the thickness of the first PO film layer 510, the 2nd PO film layer 530 and the 3rd PO film layer 550 in the application is successively passed
Increase, in this way by soft to hard, so that the application has 3D curved surface effect, and 3D curved surface effect is very good, and to print
Brush applied coating 700 is arranged after transparent PET film layer 600, more attractive.
Transparent PET film layer 600 is the intensity for further increasing the application with a thickness of 0.05mm~0.08mm
With the printing for being convenient for printed coating 700.
Printed coating 700 is specially ink printing layer.
The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above.Current row
The technical staff of industry is described in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (8)
1. the diamond film that a kind of microwave plasma CVD is formed, which is characterized in that the diamond film includes
Release layer, the first optical adhesive layer, electrostatic resistant transparent PET film layer, diamond layer, heat-conducting glue layer, transparent PET film layer and printing apply
Layer, the electrostatic resistant transparent PET film layer are fixed on release layer by the first optical adhesive layer, and the diamond layer passes through microwave etc.
Gas ions chemical vapor deposition process is set up directly on electrostatic resistant transparent PET film layer, and the transparent PET film layer passes through PU glue-line
It is arranged on diamond layer, the printed coating is arranged in transparent PET film layer.
2. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, the release layer with a thickness of 0.01mm~0.03mm.
3. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, the electrostatic resistant transparent PET film layer with a thickness of 0.2mm~0.5mm.
4. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, the diamond layer with a thickness of 0.1mm~0.5mm.
5. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, the transparent PET film layer with a thickness of 0.05mm~0.08mm.
6. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In the printed coating is ink printing layer.
7. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, first optical adhesive layer with a thickness of 0.01mm~0.02mm.
8. the diamond film that a kind of microwave plasma CVD according to claim 1 is formed, feature exist
In, the heat-conducting glue layer is made of heat conductive silica gel, the heat-conducting glue layer with a thickness of 0.005mm~0.01mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821457308.9U CN209178291U (en) | 2018-09-06 | 2018-09-06 | A kind of diamond film that microwave plasma CVD is formed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821457308.9U CN209178291U (en) | 2018-09-06 | 2018-09-06 | A kind of diamond film that microwave plasma CVD is formed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209178291U true CN209178291U (en) | 2019-07-30 |
Family
ID=67359486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821457308.9U Active CN209178291U (en) | 2018-09-06 | 2018-09-06 | A kind of diamond film that microwave plasma CVD is formed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209178291U (en) |
-
2018
- 2018-09-06 CN CN201821457308.9U patent/CN209178291U/en active Active
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Address after: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee after: Shanghai Zhengshi Technology Co.,Ltd. Address before: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee before: SHANGHAI ZHENGSHI TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |