CN215683018U - Silicon-based bonded graphene heat dissipation copper-clad ceramic substrate - Google Patents
Silicon-based bonded graphene heat dissipation copper-clad ceramic substrate Download PDFInfo
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- CN215683018U CN215683018U CN202121006789.3U CN202121006789U CN215683018U CN 215683018 U CN215683018 U CN 215683018U CN 202121006789 U CN202121006789 U CN 202121006789U CN 215683018 U CN215683018 U CN 215683018U
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- 239000000919 ceramic Substances 0.000 title claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 48
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 239000011889 copper foil Substances 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- -1 graphite alkene Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 3
- 239000011224 oxide ceramic Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 13
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 8
- 239000002210 silicon-based material Substances 0.000 abstract description 7
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 abstract description 6
- 239000003054 catalyst Substances 0.000 abstract description 5
- 239000002243 precursor Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 21
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model relates to the technical field of electronic component heat dissipation, in particular to a silicon-based bonded graphene heat dissipation copper-clad ceramic substrate which comprises a copper foil layer, a ceramic layer and a silicon-based bonded graphene coating, wherein the copper foil layer, the ceramic layer and the silicon-based bonded graphene coating are sequentially arranged from top to bottom, the silicon-based bonded graphene coating is arranged on the lower surface of the ceramic layer, and the copper foil layer covers the upper surface of the ceramic layer. According to the utility model, a Chemical Vapor Deposition (CVD) process is adopted, a silicon-containing compound is used as a silicon source catalyst, a hydrocarbon is used as a carbon source precursor, a silicon-based bonded graphene coating is grown and deposited on the surface of a copper-clad ceramic layer, and heat generated by a circuit etched on a copper foil layer or a loaded electronic device can be rapidly dissipated through the ceramic substrate and the silicon-based bonded graphene coating in sequence.
Description
Technical Field
The utility model relates to the technical field of electronic component heat dissipation, in particular to a silicon-based bonded graphene heat dissipation copper-clad ceramic substrate.
Background
The copper-clad ceramic substrate has the advantages of strong mechanical stress, good insulating property, high thermal conductivity, high strength, good thermal cycle performance, wide use temperature range and the like, can etch various circuit patterns like a PCB (printed circuit board), and has wide application in the fields of automotive electronics, aerospace and the like. With the increase of the integration degree of the chip, the chip is developed towards miniaturization, lightness and thinness and intellectualization, and 5G is applied to large-scale business, in the fields of consumer electronics, communication base stations, power batteries and the like, a high-power semiconductor module and electronic components have very large heat dissipation requirements, and the heat dissipation effect of the current copper-clad ceramic substrate cannot meet the requirements.
Graphene is a hexagonal, honeycomb-lattice planar thin film of carbon atoms with sp2 hybridized orbitals, a two-dimensional material only one carbon atom thick. Thermal conductivity of grapheneThe electron mobility is more than 15000 cm at normal temperature and reaches 5300W/mK2V.s. The nanometer material has wide application prospect in the fields of semiconductor devices, solar photovoltaic, automobiles, new energy sources and the like as a novel nanometer material which is discovered at present and has the thinnest thickness, the highest strength and the strongest electric and heat conducting properties, and particularly has preliminary application and great development potential in the field of heat management as a material with the best heat conducting property at present. At present, one of the modes of using graphene to the heat management direction is to make a graphene heat dissipation film firstly, then bond the graphene heat dissipation film and the substrate together through the heat-conducting adhesive, the heat dissipation performance of the graphene heat dissipation film is affected by the heat-conducting adhesive in such a way, and the bonding strength of the graphene heat dissipation film and the substrate is reduced along with the time extension.
SUMMERY OF THE UTILITY MODEL
Aiming at the problems in the prior art, the utility model aims to provide a method for growing a silicon-based bonded graphene coating on the lower surface of a ceramic layer, so that a graphene heat dissipation film and a substrate are prevented from being bonded together through a heat conduction adhesive, and the heat dissipation capability of the substrate is greatly improved.
In order to achieve the purpose, the technical scheme of the utility model is as follows:
the utility model provides a graphite alkene heat dissipation of silicon-based bonded covers copper ceramic substrate, includes copper foil layer, ceramic layer and silicon-based bonded graphene coating that from the top down set gradually, silicon-based bonded graphene coating establish the lower surface of ceramic layer, the copper foil layer cover the upper surface of ceramic layer.
The thickness of the copper foil layer is 10-600 mu m.
And the surface of the copper foil layer is loaded with electronic components.
The ceramic layer is any one of oxide ceramic, nitride ceramic, carbide ceramic, boride ceramic, silicide ceramic and fluoride ceramic.
The utility model has the beneficial effects that:
1. according to the utility model, a Chemical Vapor Deposition (CVD) process is adopted, a silicon-containing compound is used as a silicon source catalyst, a hydrocarbon is used as a carbon source precursor, and a silicon-based bonded graphene coating is grown and deposited on the surface of a copper-coated ceramic layer, so that heat generated by a circuit etched on a copper foil layer or a loaded electronic device can be rapidly dissipated through the ceramic substrate and the silicon-based bonded graphene coating in sequence, and meanwhile, due to the existence of silicon-based bonding, the bonding strength of the silicon-based bonded graphene coating and the ceramic layer is improved, and the reduction of the bonding strength with the time is avoided.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic diagram of a thick film thermistor device with a silicon-based bonded graphene copper-clad ceramic substrate as a heat dissipation structure according to the present invention.
Fig. 3 is an infrared thermography of thick film thermistors with and without silicon-based bonded graphene heat dissipation coatings during operation.
Detailed Description
Referring to fig. 1, 2 and 3, in which: 1 is a copper foil layer, 2 is a ceramic layer, 3 is a silicon-based bonded graphene coating, and 4 is a thick film thermistor device.
The utility model relates to a silicon-based bonded graphene heat dissipation copper-clad ceramic substrate which comprises a copper foil layer, a ceramic layer and a silicon-based bonded graphene coating, wherein the copper foil layer, the ceramic layer and the silicon-based bonded graphene coating are sequentially arranged from bottom to top, the silicon-based bonded graphene coating grows on the lower surface of the ceramic layer, the copper foil layer covers the upper surface of the ceramic layer, and the silicon-based bonded graphene coating is a silicon-based bonded graphene coating which is formed by adopting a Chemical Vapor Deposition (CVD) process, taking a silicon-containing compound as a catalyst and taking a hydrocarbon compound as a carbon source and has covalent bond bonding.
The thickness of the copper foil layer is 10-600 microns, the copper foil layer can load electronic components and etch various circuit patterns, the ceramic layer is any one of oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics and other ceramic materials, and the thickness of the silicon-based bonded graphene coating is any thickness from nanometer to micron according to different growth process conditions; the silicon-containing compound is one or more of silicon-containing organic compounds such as silicon rubber, tetraethoxysilane, tetramethoxysilane, polydimethylsiloxane and the like, and the hydrocarbon is one or more of hydrocarbon-containing organic compounds such as alkane, alkene, alkyne, ketone, lipid, alcohol, aldehyde and the like.
The preparation method comprises the following steps: firstly, adopting the processes of screen printing, direct copper coating (DBC), direct copper coating (DPC), Active Metal Brazing (AMB) and the like to cover a copper foil layer on the upper surface of a ceramic layer; and then, growing and depositing a silicon-based bonded graphene coating on the lower surface of the ceramic layer of the copper-clad foil layer by adopting a Chemical Vapor Deposition (CVD) process and taking a silicon-containing compound as a silicon source catalyst and a hydrocarbon compound as a carbon source precursor. The Chemical Vapor Deposition (CVD) may be an Atmospheric Pressure Chemical Vapor Deposition (APCVD), a Low Pressure Chemical Vapor Deposition (LPCVD), a plasma chemical vapor deposition (PECVD), a Metal Organic Chemical Vapor Deposition (MOCVD), or a Laser Chemical Vapor Deposition (LCVD) process.
When the comparative test of fig. 3 is performed, the thick film thermistor of the graphene heat dissipation copper-clad ceramic substrate with silicon-based bonding is selected as follows: coating a copper foil layer on the upper surface of the ceramic layer, and growing and depositing a silicon-based bonded graphene coating on the lower surface of the ceramic layer by using a Chemical Vapor Deposition (CVD) process by using a silicon-containing compound as a silicon source catalyst and a hydrocarbon as a carbon source precursor, wherein the silicon-containing compound is Tetraethoxysilane (TEOS), and the hydrocarbon is methane (CH)4) The used Chemical Vapor Deposition (CVD) process is Atmospheric Pressure Chemical Vapor Deposition (APCVD), the copper cladding process is DBC process, the thickness of a copper foil layer is 300 mu m, the ceramic layer 2 is 96% alumina ceramic with the thickness of 0.635mm, the thickness of a silicon-based bonded graphene coating is 5 mu m, a thick film thermistor 4 is loaded on the copper foil layer, and the thick film thermistor 4 is a TO247 packaged resistor with the resistance value of 10 omega and the power of 100W.
Thick film thermistor without silicon-based bonded graphene coating: the thick film thermistor of the silicon-based bonded graphene coating is a ceramic layer of 96% alumina ceramic with the thickness of 0.635mm, a copper foil layer is covered on the upper surface of the ceramic layer, the copper coating process is a DBC (direct copper plating) process, the thickness of the copper foil layer is 300 mu m, then the thick film thermistor 4 is loaded on the copper foil layer, and the thick film thermistor 4 is a TO247 packaged resistor with the resistance value of 10 omega and the power of 100W.
The thick film thermistor with the silicon-based bonded graphene heat dissipation copper-clad ceramic substrate and the thick film thermistor without the silicon-based bonded graphene heat dissipation coating, which are formed according to the requirements, are subjected to a heat dissipation contrast test under the same experimental conditions, an infrared thermal imager is used for recording the heat dissipation conditions of two thick film thermistor devices, and the thick film thermistor with the silicon-based bonded graphene heat dissipation copper-clad ceramic substrate can timely transmit the heat generated by the thick film thermistor through the silicon-based bonded graphene coating from an infrared thermal image map, so that the problem of failure caused by heat accumulation at the position of an electronic device is avoided, and the heat generated by the thick film thermistor without the silicon-based bonded graphene heat dissipation coating can not be timely transmitted.
The foregoing shows and describes the general principles, essential features, and advantages of the utility model. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the utility model, but that various changes and modifications may be made without departing from the spirit and scope of the utility model, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (4)
1. The utility model provides a graphite alkene heat dissipation of silicon-based bonded covers copper ceramic substrate which characterized in that: the ceramic layer comprises a copper foil layer, a ceramic layer and a silicon-based bonding graphene coating which are sequentially arranged from top to bottom, wherein the silicon-based bonding graphene coating is arranged on the lower surface of the ceramic layer, and the copper foil layer covers the upper surface of the ceramic layer.
2. The silicon-based bonded graphene heat dissipation copper-clad ceramic substrate according to claim 1, wherein: the thickness of the copper foil layer is 10-600 mu m.
3. The silicon-based bonded graphene heat dissipation copper-clad ceramic substrate according to claim 2, wherein: and the surface of the copper foil layer is loaded with electronic components.
4. The silicon-based bonded graphene heat dissipation copper-clad ceramic substrate according to claim 1, wherein: the ceramic layer is any one of oxide ceramic, nitride ceramic, carbide ceramic, boride ceramic, silicide ceramic and fluoride ceramic.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121006789.3U CN215683018U (en) | 2021-05-12 | 2021-05-12 | Silicon-based bonded graphene heat dissipation copper-clad ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121006789.3U CN215683018U (en) | 2021-05-12 | 2021-05-12 | Silicon-based bonded graphene heat dissipation copper-clad ceramic substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11869760B1 (en) | 2022-07-27 | 2024-01-09 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronic device assemblies having an electrically insulating layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11869760B1 (en) | 2022-07-27 | 2024-01-09 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronic device assemblies having an electrically insulating layer |
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