CN104637898A - Thermally conductive composite layer of integrated circuit device and electronic device thermal conduction structure packaging method - Google Patents
Thermally conductive composite layer of integrated circuit device and electronic device thermal conduction structure packaging method Download PDFInfo
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- CN104637898A CN104637898A CN201410738605.0A CN201410738605A CN104637898A CN 104637898 A CN104637898 A CN 104637898A CN 201410738605 A CN201410738605 A CN 201410738605A CN 104637898 A CN104637898 A CN 104637898A
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Abstract
The invention discloses a thermally conductive composite layer of an integrated circuit device and an electronic device thermal conduction structure packaging method. Single-layer, double-layer or few-layer boron nitride alkene and graphene is prepared by means of chemical vapor deposition or solvent stripping and are transferred to local hot spots of a power chip successively trough corresponding transfer techniques. The boron nitride alkene is taken as an insulation protection layer of a circuit, meanwhile good heat conduction performance of the boron nitride alkene and the graphene is given into play, and the requirement on heat dissipation in high-heat-flux high-power electronic devices can be met.
Description
Technical field
The present invention relates to a kind of microelectronic device package structure and preparation method, particularly microelectronic component conductive structure and preparation method, be applied to and meet technical field of heat dissipation in the high-power electronic device of high heat flux.
Background technology
Accelerate along with electronic component and system constantly diminish, heat treatment and reliability become the key issue affecting their life-spans.The heat management of the high hot-fluid focus in local is the key of high-power electronic device, and inconsistent heat radiation can cause special area in chip overheated, affects the reliability of electronic system performance and electronic device.In recent years, Graphene is due to strong sp
2key brings the thermal conductivity 5300W/mK of superelevation, is suggested and can be used as a kind of promising heat sink material.Hexagonal boron nitride has the layer structure very similar with Graphene, comprises hexagoinal lattice in same interlamellar spacing and face, covalent bond and the weak Van der Waals force of interlayer in even similar strong face.But be different from Graphene again, hexagonal boron nitride has stronger thermal endurance, chemical stability, insulating properties and deep-UV light-emitting performance, and its thermal conductivity is ten times of quartz, and thermal coefficient of expansion is equivalent to quartz, being minimum in pottery, is the best insulator of a kind of thermal conductivity.
Usual chip surface silicon dioxide serves as insulating protective layer, but its thickness can affect the radiating effect of Graphene, SiO
2the too thick focus heat that can hinder of layer effectively conducts to graphene layer, and the too thin metallic circuit that easily makes again contacts with graphene layer and occurs short circuit, and SiO
2material conducts heat rate is lower, affects the radiating effect of microelectronic component.
Summary of the invention
In order to solve prior art problem, the object of the invention is to the deficiency overcoming prior art existence, a kind of heat-conductive composite material layer and electronic device conductive structure method for packing of integrated circuit (IC)-components are provided, by the radiator structure of two-dimensional layer materials application to Electronic Packaging, be applied to the integrated circuit (IC) chip surface that density of heat flow rate is higher, form the high heat-delivery surface of insulation, solve the heat dissipation problem of the high hot-fluid focus in high power device local.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
A kind of heat-conductive composite material layer of integrated circuit (IC)-components; adopt boron nitride alkene two-dimensional layer material and the Graphene two-dimensional layer material of individual layer, bilayer or few layer; using boron nitride alkene as the insulating protective layer of integrated circuit (IC)-components; again the graphene layer adopting Graphene two-dimensional layer material to prepare is transferred to the upper surface of boron nitride alkene layer, thus form the heat-conductive composite material layer of integrated circuit (IC)-components.
A kind of electronic device conductive structure method for packing utilizing the heat-conductive composite material layer of integrated circuit (IC)-components of the present invention, chemical vapour deposition technique or solvent stripping method is adopted to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, when adopting chemical vapour deposition technique to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
(1) at copper foil surface growing boron nitride alkene layer, form boron nitride alkene/Copper Foil binder course, then on boron nitride alkene/Copper Foil binder course, the polymethyl methacrylate of spin coating thickness 300nm, as film support layer, obtains polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems;
(2) polyethylene terephthalate of thickness 200 μm is used, adhere to as auxiliary frame on polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems of preparing in step (1), form polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems;
(3) molar concentration is used to be that the NaOH solution of 0.25 M is as electrolyte, DC power cathode is connected on the Copper Foil of the polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems of preparation in step (2), DC power anode is connected to other platinum electrode simultaneously, DC power supply electric current is risen to about 1A, after cell reaction 30s, Copper Foil is peeled off from polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems, obtain polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf,
(4) by prepare in step (3) polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf is transferred in objective chip, boron nitride alkene layer is directly combined with objective chip, remove auxiliary frame polyethylene terephthalate again, objective chip is formed polymethyl methacrylate/boron nitride alkene binder course;
(5) to the polymethyl methacrylate/boron nitride alkene binder course of preparation in step (4), remove polymethyl methacrylate with acetone, namely objective chip obtains exposed boron nitride alkene layer;
(6) boron nitride alkene is replaced with Graphene, repeat step (1)-(3) successively, obtain polyethylene terephthalate/polymethyl methacrylate/graphene-structured layer, again polyethylene terephthalate/polymethyl methacrylate/graphene-structured layer is transferred on the boron nitride alkene layer on the mark chip of preparation in step (5), graphene layer is directly combined with boron nitride alkene layer, form polyethylene terephthalate/polymethyl methacrylate/Graphene/boron nitride alkene structure sheaf system, the method identical with step (4) is adopted to remove auxiliary frame again, obtain polymethyl methacrylate/Graphene/boron nitride alkene composite construction layer, the method identical with step (5) is finally adopted to remove polymethyl methacrylate, the final composite layer obtaining Graphene and boron nitride alkene in objective chip.
When adopting solvent stripping method to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
A. with the boron nitride nanosheet that acetone cleaning solvent stripping method obtains, organic solvent residual when peeling off is removed;
B. by after the boron nitride nanosheet cleaning prepared in step a, put into the ethanol of set amount, and the polyvinylpyrrolidone adding setting ratio forms mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtain boron nitride alkene dispersion liquid;
C. the boron nitride alkene dispersion liquid prepared in stepb is spun on the focus of objective chip, then 60
odry under C, objective chip is formed boron nitride alkene layer;
D. replace boron nitride alkene with Graphene, repeat step a and step b successively, obtain graphene dispersing solution; The boron nitride alkene layer spin coating graphene dispersing solution on the surface of the objective chip then prepared in step c, then the drying means adopting step c identical, finally obtain the composite layer of Graphene and boron nitride alkene on power chip.
As the preferred technical scheme of the present invention, boron nitride alkene or Graphene is repeated to transfer in objective chip, by controlling the transfer number of boron nitride alkene and Graphene, power chip is prepared the composite layer formed by the boron nitride alkene layer of individual layer, bilayer or few layer and graphene layer.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. the present invention is using boron nitride alkene as the insulating protective layer of circuit, plays the heat-conductive characteristic that itself and Graphene are good simultaneously, in the high-power electronic device of high heat flux, meets radiating requirements;
2. the present invention's boron nitride alkene of exceeding ten times using thermal conductivity is as the insulating protective layer of circuit, again by high thermal conductivity and the Graphene of structural similarity transfers to upper surface, greatly can improve radiating effect, the high hot-fluid focus of the local for chip is very effective thermal management scheme;
3. the present invention's individual layer, bilayer, the boron nitride alkene of few layer and Graphene prepared by chemical vapour deposition (CVD) or solvent stripping method; by corresponding transfer techniques; successively transfer in the hot localised points of power chip; using boron nitride alkene as the insulating protective layer of circuit; play the heat-conductive characteristic that itself and Graphene are good simultaneously, radiating requirements can be met in the high-power electronic device of high heat flux.
Accompanying drawing explanation
Fig. 1 is the exemplary plot of chip sample in transfer process that the embodiment of the present invention one adopts chemical vapour deposition technique to prepare.
Fig. 2 is the test effect data comparison diagram of the chip sample that the embodiment of the present invention one adopts chemical vapour deposition technique to prepare.
Fig. 3 is the exemplary plot of chip sample in transfer process that the embodiment of the present invention two adopts solvent stripping method to prepare.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
embodiment one:
In the present embodiment, see Fig. 1 and Fig. 2, a kind of electronic device conductive structure method for packing, adopt chemical vapour deposition technique to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
(1) at copper foil surface growing boron nitride alkene layer, form boron nitride alkene/Copper Foil binder course, then on boron nitride alkene/Copper Foil binder course spin coating a layer thickness be the polymethyl methacrylate (PMMA) of 300nm as film support layer, obtain PMMA/BN/Cu structure sheaf system;
(2) use thickness to be the polyethylene terephthalate of 200 μm, to adhere in the PMMA/BN/Cu structure sheaf system prepared in step (1) as auxiliary frame, form framework/PMMA/BN/Cu structure sheaf system;
(3) molar concentration is used to be that the NaOH solution of 0.25 M is as electrolyte, DC power cathode is connected on the Copper Foil of the framework/PMMA/BN/Cu structure sheaf system of preparation in step (2), DC power anode is connected to other platinum electrode simultaneously, DC power supply electric current is risen to about 1A, after cell reaction 30s, Copper Foil is peeled off from framework/PMMA/BN/Cu structure sheaf system, obtain framework/PMMA/BN structure sheaf;
(4) framework prepared in step (3)/PMMA/BN structure sheaf is transferred in objective chip, boron nitride alkene layer is directly combined with objective chip, then removes auxiliary frame polyethylene terephthalate, objective chip is formed PMMA/BN binder course;
(5) to the polymethyl methacrylate/boron nitride alkene binder course of preparation in step (4), remove polymethyl methacrylate with acetone, namely objective chip obtains exposed boron nitride alkene layer;
(6) boron nitride alkene is replaced with Graphene, repeat step (1)-(3) successively, obtain polysiloxane framework/PMMA/G structure sheaf, again polysiloxane framework/PMMA/G is transferred on the boron nitride alkene layer on the mark chip of preparation in step (5), graphene layer is directly combined with boron nitride alkene layer, form polysiloxane framework/PMMA/G/BN structure sheaf system, the method identical with step (4) is adopted to remove auxiliary frame again, obtain PMMA/G/BN composite construction layer, the method identical with step (5) is finally adopted to remove polymethyl methacrylate, the final composite layer obtaining Graphene and boron nitride alkene in objective chip.
In the present embodiment, see Fig. 1 and Fig. 2, adopt chemical vapour deposition technique, first, copper foil surface spin coating one deck polymethyl methacrylate of boron nitride alkene is had in growth, then polyethylene terephthalate is used, adhere on PMMA/BN/Cu as auxiliary frame, use NaOH solution as electrolyte, DC power cathode is met framework/PMMA/BN/Cu, positive pole connects platinum electrode, after reaction, framework/PMMA/BN and Cu is divided out, framework/PMMA/BN is transferred in objective chip, remove auxiliary frame again, polymethyl acrylate is removed with acetone, boron nitride alkene is combined by Van der Waals force and objective chip.Then repeat same step, Graphene is transferred to BN/ objective chip surface.
embodiment two:
The present embodiment is substantially identical with embodiment one, and special feature is:
In the present embodiment, see Fig. 3, a kind of electronic device conductive structure method for packing, adopt chemical vapour deposition technique to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
A. with the boron nitride nanosheet that acetone cleaning solvent stripping method obtains, organic solvent residual when peeling off is removed;
B. by after the boron nitride nanosheet cleaning prepared in step a, put into the ethanol of set amount, and the polyvinylpyrrolidone (PVP) adding setting ratio forms mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtain boron nitride alkene dispersion liquid;
C. the boron nitride alkene dispersion liquid prepared in stepb is spun on the focus of objective chip, then 60
odry under C, objective chip is formed boron nitride alkene layer;
D. replace boron nitride alkene with Graphene, repeat step a and step b successively, obtain graphene dispersing solution; The boron nitride alkene layer spin coating graphene dispersing solution on the surface of the objective chip then prepared in step c, then the drying means adopting step c identical, finally obtain the composite layer of Graphene and boron nitride alkene on power chip.
In the present embodiment, see Fig. 3, adopt solvent stripping method, first with the boron nitride nanosheet that acetone cleaning solvent stripping method obtains, remove organic solvent residual when peeling off, boron nitride nanosheet after cleaning is put into appropriate ethanol, and adds a certain proportion of PVP, after ultrasonic, boron nitride alkene dispersion liquid is spun on the focus of power chip, drying, then repeats same step, Graphene is spun to boron nitride alkene surface.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; multiple change can also be made according to the object of innovation and creation of the present invention; change, the modification made under all Spirit Essences according to technical solution of the present invention and principle, substitute, combination, to simplify; all should be the substitute mode of equivalence; as long as goal of the invention according to the invention; only otherwise deviate from the heat-conductive composite material layer of integrated circuit (IC)-components of the present invention and the know-why of electronic device conductive structure method for packing and inventive concept, all protection scope of the present invention is belonged to.
Claims (3)
1. the heat-conductive composite material layer of an integrated circuit (IC)-components; it is characterized in that: the boron nitride alkene two-dimensional layer material and the Graphene two-dimensional layer material that adopt individual layer, bilayer or few layer; using boron nitride alkene as the insulating protective layer of integrated circuit (IC)-components; again the graphene layer adopting Graphene two-dimensional layer material to prepare is transferred to the upper surface of boron nitride alkene layer, thus form the heat-conductive composite material layer of integrated circuit (IC)-components.
2. one kind utilizes the electronic device conductive structure method for packing of the heat-conductive composite material layer of integrated circuit (IC)-components described in claim 1, it is characterized in that, chemical vapour deposition technique or solvent stripping method is adopted to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, when adopting chemical vapour deposition technique to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
(1) at copper foil surface growing boron nitride alkene layer, form boron nitride alkene/Copper Foil binder course, then on boron nitride alkene/Copper Foil binder course, the polymethyl methacrylate of spin coating thickness 300nm, as film support layer, obtains polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems;
(2) polyethylene terephthalate of thickness 200 μm is used, adhere to as auxiliary frame on the polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems of the middle preparation of described step (1), formation polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems;
(3) molar concentration is used to be that the NaOH solution of 0.25 M is as electrolyte, DC power cathode is connected on the Copper Foil of the polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems of preparation in described step (2), DC power anode is connected to other platinum electrode simultaneously, DC power supply electric current is risen to about 1A, after cell reaction 30s, Copper Foil is peeled off from polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene/copper foil structure coating systems, obtain polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf,
(4) by preparation in the described step (3) polyethylene terephthalate/polymethyl methacrylate/boron nitride alkene structure sheaf is transferred in objective chip, boron nitride alkene layer is directly combined with objective chip, remove auxiliary frame polyethylene terephthalate again, objective chip is formed polymethyl methacrylate/boron nitride alkene binder course;
(5) to the polymethyl methacrylate/boron nitride alkene binder course of preparation in described step (4), remove polymethyl methacrylate with acetone, namely objective chip obtains exposed boron nitride alkene layer;
(6) boron nitride alkene is replaced with Graphene, repeating said steps (1)-(3) successively, obtain polyethylene terephthalate/polymethyl methacrylate/graphene-structured layer, again polyethylene terephthalate/polymethyl methacrylate/graphene-structured layer is transferred on the boron nitride alkene layer on the mark chip of preparation in described step (5), graphene layer is directly combined with boron nitride alkene layer, form polyethylene terephthalate/polymethyl methacrylate/Graphene/boron nitride alkene structure sheaf system, the method identical with described step (4) is adopted to remove auxiliary frame again, obtain polymethyl methacrylate/Graphene/boron nitride alkene composite construction layer, the method identical with described step (5) is finally adopted to remove polymethyl methacrylate, the final composite layer obtaining Graphene and boron nitride alkene in objective chip.
When adopting solvent stripping method to prepare the heat-conductive composite material layer of integrated circuit (IC)-components, concrete technology step is:
A. with the boron nitride nanosheet that acetone cleaning solvent stripping method obtains, organic solvent residual when peeling off is removed;
B. by after the boron nitride nanosheet cleaning prepared in described step a, put into the ethanol of set amount, and the polyvinylpyrrolidone adding setting ratio forms mixed liquor, then to mixed liquor ultrasonic disperse 30 minutes, obtain boron nitride alkene dispersion liquid;
C. the boron nitride alkene dispersion liquid prepared in described step b is spun on the focus of objective chip, then 60
odry under C, objective chip is formed boron nitride alkene layer;
D. replace boron nitride alkene with Graphene, repeating said steps a and step b, obtains graphene dispersing solution successively; The boron nitride alkene layer spin coating graphene dispersing solution on the surface of the objective chip then prepared in described step c, then adopt the drying means that described step c is identical, on power chip, finally obtain the composite layer of Graphene and boron nitride alkene.
3. electronic device conductive structure method for packing according to claim 2, it is characterized in that: repeat boron nitride alkene or Graphene to transfer in objective chip, by controlling the transfer number of boron nitride alkene and Graphene, power chip is prepared the composite layer formed by the boron nitride alkene layer of individual layer, bilayer or few layer and graphene layer.
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Cited By (3)
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| CN109824043A (en) * | 2017-11-23 | 2019-05-31 | 中国科学院金属研究所 | The method for being bubbled transfer graphene speed is improved by regulation transfer medium layer flexibility |
| CN113441094A (en) * | 2021-05-21 | 2021-09-28 | 安徽大学 | Boron-graphene composite aerogel, preparation and application thereof |
| US11276606B2 (en) | 2018-11-13 | 2022-03-15 | Imec Vzw | Integrated electronic circuit with airgaps |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109824043A (en) * | 2017-11-23 | 2019-05-31 | 中国科学院金属研究所 | The method for being bubbled transfer graphene speed is improved by regulation transfer medium layer flexibility |
| US11276606B2 (en) | 2018-11-13 | 2022-03-15 | Imec Vzw | Integrated electronic circuit with airgaps |
| CN113441094A (en) * | 2021-05-21 | 2021-09-28 | 安徽大学 | Boron-graphene composite aerogel, preparation and application thereof |
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