CN209132790U - ESD protection structure built in a kind of fingerprint array IC - Google Patents
ESD protection structure built in a kind of fingerprint array IC Download PDFInfo
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- CN209132790U CN209132790U CN201920038616.6U CN201920038616U CN209132790U CN 209132790 U CN209132790 U CN 209132790U CN 201920038616 U CN201920038616 U CN 201920038616U CN 209132790 U CN209132790 U CN 209132790U
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Abstract
The utility model provides ESD protection structure built in a kind of fingerprint array IC, including static leakage circuit, the static leakage circuit include the resistance and clamps to link together, the clamps also grounding connection；The reception plate and capacitance connection of each of fingerprint array minimum sampling unit, the other end connection of the resistance of the other end and static leakage circuit of capacitor.After the reception plate of the utility model passes through capacitive sensing to atmospherical discharges charge, releases by the resistance current limliting of static leakage circuit, then by clamps, protect internal circuit.
Description
Technical field
The utility model belongs to chip technology field, is related to ESD protection structure built in a kind of fingerprint array IC.
Background technique
IC chip is that the integrated circuit for forming a large amount of microelectronic component is placed on one piece of modeling base, is then made into one piece
Chip, now nearly all chip seen, can be called IC chip, with the continuous development of science and technology and constantly into
Step, IC chip has been widely used in the every field of our lives, but the control module of IC is easy to be quiet by access electric current
The influence of electricity, and then influence the performance of IC chip.
Since half a century, the accidents such as electrostatic catches fire caused by electronics industry, explodes are too numerous to enumerate.Only American Electronic row
Industry is as high as several hundred hundred million dollars because losing caused by electrostatic every year, and therefore, electrostatic protection is reducing loss, promoting quality and consumption
Have great importance in terms of efficiency.
With the rapid development and extensive use of conductor technology and integrated circuit industry, device small in size, integrated level is high
Part is more received by the market, and this demand also causes spacing between conducting wire smaller and smaller, and internal oxidation film is gradually thinning, while also leading
Cause influence of the device to electrostatic very sharp, so that some small voltages may puncture these electronic devices.And electronics produces
Generated electrostatic potential is but considerably beyond its pressure voltage during production, transport, storage and transhipment etc. are a series of for product, this is just
The breakdown or failure that may cause device, influence the reliability of product.So having to pay attention to the protection of electrostatic, fundamentally solve
Certainly this problem.
In electronics industry, influence of the energy of static discharge (ESD) for traditional devices is not easy to be discovered by people.But
For because route spacing it is short, route area is small and causes to reduce pressure, for the highly dense component that resistance to current capacity is reduced, ESD
Often become its fatal killer.
Static discharge can also cause more serious problem that may not be found when any part is tested since electrostatic is put
Device caused by electricity is inferior, if finding component failure in subsequent assembly, will lead to and does over again or replace caused by device
Increased costs.Once device fails in working site, repairing or renewal cost can find than the fabrication stage and solve the problems, such as institute
The expense needed spends more 100 times or more.After some electronic components are by electrostatic discharge damage, the certain performances of product are only shown
The decline of parameter, but entirely ineffective degree has not yet been reached, such as can not often it be found without comprehensively detecting.Such as set of digits
At the increase of circuit electric current incoming level after electrostatic discharge damage, will not be generally found in circuit function test；Or
Static discharge make product occur can self-healing breakdown or other non-lethal damages, but this effect can add up, to be formed
Potential hidden danger, catastrophic failure can occur in the case where continuing to use, and be not only difficult to expect but also can not screen in advance.
It is described to be used to that human body is isolated since semiconductor fingerprint extracting device surface is exposed in air in actual use
The insulating protective layer of skin surface and detecting electrode is only one layer of very thin protective film, and human body highest can be taken under normal conditions
Ten thousand volts of electrostatic potential (especially such case is very common under the dry environment in the north) is even crossed with several kilovolts, in this way, on
During stating fingerprint collecting, electrostatic potential can also be coupled to each detecting electrode by capacitor between each plate, using this
Detecting electrode is conducted to the internal pull-up circuit of sensor, and expendable destruction will be caused to semiconductor fingerprint extracting device.
Therefore, how to enhance antistatic protection function, be the key that semiconductor fingerprint extracting device enhance one's market competitiveness consideration point one of.
Currently, at least tens of thousands of a sampled points need to protect, therefore have in design since capacitance type fingerprint array is huge
Many limitations；Reach the result of protection by the adjustment or reduction gain sensitivity of fingerprint mould group technique.
Summary of the invention
In order to solve the problems existing in the prior art, the utility model provides ESD protection structure built in a kind of fingerprint array IC,
Anti- atmospherical discharges ability can be greatly improved, and area very little can allow fingerprint detection sensitivity to mention using the utility model
Height simplifies the technological design of mould group.
ESD protection structure built in fingerprint array IC provided by the utility model, including static leakage circuit, the electrostatic are let out
Electric discharge road includes the resistance and clamps to link together, the clamps also grounding connection；Each of fingerprint array is most
The reception plate and capacitance connection of small sampling unit, the other end connection of the resistance of the other end and static leakage circuit of capacitor.
After plate is received by being connected thereto capacitive sensing to atmospherical discharges charge, limited by the resistance of static leakage circuit
Stream, then released by the clamps of static leakage circuit, protect internal circuit.
Each of fingerprint array minimum sampling unit tool there are two receiving plate, it is one of receive plate by capacitor with
Static leakage circuit connection.The utility model can also by two reception plates respectively with corresponding capacitance connection, two
Capacitor is connect with corresponding static leakage circuit respectively.
Clamps described in the utility model are diode, and the cathode of diode and the resistance of static leakage circuit connect,
The plus earth of diode.Clamps described in the utility model are triode or metal-oxide-semiconductor.
The utility model has the beneficial effects that the utility model, which receives plate, senses atmospherical discharges charge by capacitive way
Afterwards, it by resistance current limliting, then is released by clamps, protects internal circuit.It is discharged by setting inner air and protects knot
Structure reduces the design requirement to other parts, it is easier to improve detection sensitivity, reduce the coat to fingerprint mould group, envelope
The requirement of dress.
Detailed description of the invention
Fig. 1 is fingerprint sampling array schematic diagram；
Fig. 2 is fingerprint sampling array one schematic diagram for adopting unit (PIXEL)；
Fig. 3 is the common sampling principle figure of fingerprint sampling array；
Fig. 4 is the sampling schematic diagram one of the utility model fingerprint sampling array；
Fig. 5 is the sampling schematic diagram two of the utility model fingerprint sampling array；
Fig. 6 is the sampling schematic diagram three of the utility model fingerprint sampling array；
Fig. 7 is the sampling schematic diagram four of the utility model fingerprint sampling array；
Fig. 8 is the sampling schematic diagram five of the utility model fingerprint sampling array.
Specific embodiment
As shown in Figure 1, 2, 3, fingerprint array IC includes several sampling units (PIXEL), forms fingerprint sampling array.Each
There are two receive plate (A, B) for the minimum sampling unit tool of one of fingerprint sampling array.As shown in figure 3, being fingerprint sampling array
Common sampling principle figure, receive plate A connect with capacitor CA, reception plate B connect with capacitor CB, capacitor CA, capacitor CB divide
Do not connect fingerprint sample circuit, specifically, capacitor CA, capacitor CB are separately connected the both ends of capacitor CC, capacitor CA also with amplifier
The cathode of AMP connects, and capacitor CB is also connect with the output end of amplifier AMP, and anode and the reference voltage VREF of amplifier AMP connects
It connects.
As shown in figure 4, two static leakage circuits are shown in figure, wherein the two of the resistance RA of a static leakage circuit
End is separately connected the cathode of capacitor CA and diode DA, and another termination of the plus earth of diode DA, capacitor CA receives plate
A.The both ends of the resistance RB of another static leakage circuit are separately connected the cathode of capacitor CB and diode DB, and diode DB is just
Another termination of pole ground connection, capacitor CB receives plate B.The both ends of capacitor CC are connect respectively between resistance RA and diode DA, with
And connect between resistance RB and diode DB, the cathode of amplifier AMP connects between resistance RA and diode DA, amplifier AMP
Output terminate between resistance RB and diode DB, amplifier AMP anode connect with reference voltage VREF.
Static leakage circuit in Fig. 4 can only retain one.As shown in figure 5, cancel resistance RA and diode DA, then,
One end connection of capacitor CA receives plate A, and the other end is separately connected the cathode of capacitor CC, amplifier AMP, the both ends point of capacitor CB
Not receive plate B and resistance RB, the other end of resistance RB be separately connected the other end of capacitor CC, diode DB cathode, put
The output end of big device AMP, the plus earth of diode DB.It can also be as shown in fig. 6, cancellation resistance RB and diode DB, then, electric
The both ends of resistance RA are separately connected the cathode of capacitor CA and diode DA, the plus earth of diode DA, another termination of capacitor CA
Plate A is received, the both ends of capacitor CB receive the output end of plate B, amplifier AMP respectively, and the both ends of capacitor CC connect respectively
Between the output end of capacitor CB and amplifier AMP, resistance RA and diode DA, the cathode of amplifier AMP is connect in resistance RA and two
Between pole pipe DA, the anode of amplifier AMP meets reference voltage VREF.
The utility model improves sky by the way that current-limiting resistance, clamps mode is arranged in built-in reception capacitance terminal to reach
The purpose of gas electric discharge pressure resistance passes through respectively after reception plate A/B senses atmospherical discharges charge by capacitive way (CA/CB)
RA/RB resistance current limliting, then released by DA/DB, protect internal circuit.Diode DA, diode DB in Fig. 4,5,6 may be used also
To be substituted for other clamps, such as triode, metal-oxide-semiconductor.As shown in fig. 7, using triode Q1, the base stage of triode Q1,
Emitter ground connection, collector connect the cathode of amplifier AMP.As shown in figure 8, the drain electrode of metal-oxide-semiconductor M1 connects amplification using metal-oxide-semiconductor M1
The cathode of device AMP, grid, source electrode ground connection.
Claims (6)
1. ESD protection structure built in a kind of fingerprint array IC, it is characterised in that: including static leakage circuit, the electrostatic leakage
Circuit includes the resistance and clamps to link together, the clamps also grounding connection；Each minimum of fingerprint array
The reception plate and capacitance connection of sampling unit, the other end connection of the resistance of the other end and static leakage circuit of capacitor.
2. ESD protection structure built in fingerprint array IC as described in claim 1, it is characterised in that: each of fingerprint array is most
Small sampling unit tool is connect by capacitor with static leakage circuit there are two plate, one of plate that receives is received.
3. ESD protection structure built in fingerprint array IC as described in claim 1, it is characterised in that: each of fingerprint array is most
Small sampling unit tool is there are two receiving plate, and two receptions plates respectively with corresponding capacitance connection, distinguish by two capacitors
It is connect with corresponding static leakage circuit.
4. ESD protection structure built in fingerprint array IC as claimed in claim 1,2 or 3, it is characterised in that: the clamps
For diode, the cathode of diode and the resistance of static leakage circuit are connected, the plus earth of diode.
5. ESD protection structure built in fingerprint array IC as claimed in claim 1,2 or 3, it is characterised in that: the clamps
For triode.
6. ESD protection structure built in fingerprint array IC as claimed in claim 1,2 or 3, it is characterised in that: the clamps
For metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920038616.6U CN209132790U (en) | 2019-01-10 | 2019-01-10 | ESD protection structure built in a kind of fingerprint array IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920038616.6U CN209132790U (en) | 2019-01-10 | 2019-01-10 | ESD protection structure built in a kind of fingerprint array IC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209132790U true CN209132790U (en) | 2019-07-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920038616.6U Active CN209132790U (en) | 2019-01-10 | 2019-01-10 | ESD protection structure built in a kind of fingerprint array IC |
Country Status (1)
| Country | Link |
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| CN (1) | CN209132790U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112822828A (en) * | 2020-12-31 | 2021-05-18 | 成都旭光科技股份有限公司 | Circuit for improving electrostatic protection capability of WiFi module |
-
2019
- 2019-01-10 CN CN201920038616.6U patent/CN209132790U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112822828A (en) * | 2020-12-31 | 2021-05-18 | 成都旭光科技股份有限公司 | Circuit for improving electrostatic protection capability of WiFi module |
| CN112822828B (en) * | 2020-12-31 | 2024-03-15 | 成都旭光科技股份有限公司 | Circuit for improving electrostatic protection capability of WiFi module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230105 Address after: 215000 Floor 3, R&D Building, No. 1699, Zuchongzhi South Road, Yushan Town, Kunshan City, Suzhou, Jiangsu Province Patentee after: Suzhou Shengbang Yuanrong Information Security Technology Co.,Ltd. Address before: 215399 9th Floor, Complex Building, No. 1699, Zuchongzhi South Road, Kunshan City, Jiangsu Province, Suzhou City, Jiangsu Province Patentee before: SUZHOU SHENZHI MICROELECTRONICS Co.,Ltd. |
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| TR01 | Transfer of patent right |