CN209104333U - A kind of rich font structure microstrip line low-pass filter - Google Patents
A kind of rich font structure microstrip line low-pass filter Download PDFInfo
- Publication number
- CN209104333U CN209104333U CN201821990541.3U CN201821990541U CN209104333U CN 209104333 U CN209104333 U CN 209104333U CN 201821990541 U CN201821990541 U CN 201821990541U CN 209104333 U CN209104333 U CN 209104333U
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- China
- Prior art keywords
- microstrip line
- capacitor
- line
- inductance
- microstrip
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Abstract
The utility model discloses a kind of rich font structure microstrip line low-pass filters, the medium substrate of metal ground plate is equipped with including metal micro-strip line and lower surface, metal micro-strip line is that the rich font of an entirety is located at the upper surface of medium substrate with line, metal micro-strip line is sticked on medium substrate using photographic printing technique, and metal micro-strip line is in symmetrical structure along medium substrate length direction central axes;Metal micro-strip line includes signal input part microstrip line, first capacitor microstrip line, the first inductance microstrip line, the second capacitor microstrip line, the second inductance microstrip line, third capacitor microstrip line and signal output end microstrip line.The utility model uses the method integration low-pass filter of microstrip line, has the advantages that structure is simple, is easily integrated, minimizing and bandwidth, mainly meet cutoff frequency be 3GHz, ripple 0.5dB, 4.5GHz when technical parameter requirement of the loss not less than 25dB.
Description
Technical field
The utility model relates to radio band technical field of communication equipment, low more particularly, to a kind of rich font structure microstrip line
Bandpass filter.
Background technique
Filter is a kind of useful frequency signal to be made by inhibiting the electronic device of unwanted frequency signal, low pass simultaneously
Filter is to allow the signal lower than cutoff frequency to pass through, but the intransitable electronic filtering of the signal for being higher than cutoff frequency fills
It sets.In modern age telecommunication apparatus and all kinds of control systems, filter is using extremely wide, in all electronic components, filtering
Device is the technology electronic device the most complicated using most, and the superiority and inferiority of filter directly determines the superiority and inferiority of product, so,
Research and production to filter are always paid attention to by various countries, and especially we live in the new era of informationization technology, microwave
The huge advance and development of technology bring inexhaustible excellent experience to the mankind, and radio-frequency technique changes me silently
Life, the mankind frequency of use wave band of electromagnetic wave is improved it is higher and higher, therefore to the low pass filtered for being applied to high band
Wave device proposes higher technical requirements.Traditional low-pass filter is mainly active filter, passes through the coupling of inductance and capacitor
It closes to form LC low-pass filter, but the decaying of such filter stop bend is not big enough, generally only increases to increase stopband attenuation
Add filter order, make filter volume and increased costs in this way, while useful signal decaying can be made to become larger again, increases debugging
Difficulty is not suitable for the miniature requirement of equipment.
Utility model content
The purpose of the utility model is to overcome above-mentioned deficiencies in the prior art, provide a kind of rich font structure microstrip line
Low-pass filter, the utility model are easily integrated miniaturization, have small in size, light-weight, bandwidth, manufacture craft simply excellent
Point.
A kind of rich font structure microstrip line low pass filtered that in order to achieve the above purposes, the technical solution adopted by the utility model is:
Wave device, it is characterised in that: the medium substrate of metal ground plate, the metal micro-strip line are equipped with including metal micro-strip line and lower surface
Positioned at the upper surface of medium substrate, the metal micro-strip line includes the signal input part microstrip line for being rectangular parallelepiped structure, first
Capacitor microstrip line, the first inductance microstrip line, the second capacitor microstrip line, the second inductance microstrip line, third capacitor microstrip line and signal
Output end microstrip line, the signal input part microstrip line, first capacitor microstrip line, the first inductance microstrip line, the second capacitor micro-strip
Line, the second inductance microstrip line, third capacitor microstrip line and signal output end microstrip line along medium substrate length direction axis
Line is successively laid, and one end of the signal input part microstrip line is connect with the side of first capacitor microstrip line, the first capacitor
The other side of microstrip line is connect with one end of the first inductance microstrip line, the other end and the second capacitor of the first inductance microstrip line
The side of microstrip line connects, and the other side of the second capacitor microstrip line is connect with one end of the second inductance microstrip line, and described the
The other end of two inductance microstrip lines is connect with the side of third capacitor microstrip line, the other side of the third capacitor microstrip line and letter
One end connection of number output end microstrip line, the signal input part microstrip line, first capacitor microstrip line, the first inductance microstrip line,
Second capacitor microstrip line, the second inductance microstrip line, third capacitor microstrip line and signal output end microstrip line be collectively formed one it is rich
Font band line, the signal input part microstrip line, first capacitor microstrip line, the first inductance microstrip line, the second capacitor microstrip line, the
Two inductance microstrip lines, third capacitor microstrip line and signal output end microstrip line stick in medium substrate using photographic printing technique
On.
A kind of above-mentioned rich font structure microstrip line low-pass filter, it is characterised in that: the left end of the rich font with line
Face is concordant with the left side of medium substrate, and the right side of the rich font with line is concordant with the right side of medium substrate.
Above-mentioned a kind of rich font structure microstrip line low-pass filter, it is characterised in that: the medium substrate is for model
The high frequency substrate of Rogers RT/duroid 5880, the length of the medium substrate is 62.27mm, width 25.36mm, thickness
Degree is 1mm.
A kind of above-mentioned rich font structure microstrip line low-pass filter, it is characterised in that: the signal input part microstrip line
It is brass microstrip line with signal output end microstrip line, the size of the signal input part microstrip line and signal output end microstrip line
Equal and length is 16.55mm, width 2.80mm, with a thickness of 0.035mm.
A kind of above-mentioned rich font structure microstrip line low-pass filter, it is characterised in that: the first capacitor microstrip line and
Third capacitor microstrip line is brass microstrip line, the equal in magnitude and length of the first capacitor microstrip line and third capacitor microstrip line
Degree is 5.08mm, width 12.68mm, with a thickness of 0.035mm.
Above-mentioned a kind of rich font structure microstrip line low-pass filter, it is characterised in that: the second capacitor microstrip line is
Brass microstrip line and length is 7.57mm, width 12.68mm, with a thickness of 0.035mm.
A kind of above-mentioned rich font structure microstrip line low-pass filter, it is characterised in that: the first inductance microstrip line and
Second inductance microstrip line is brass microstrip line, the equal in magnitude and length of the first inductance microstrip line and the second inductance microstrip line
Degree is 5.72mm, width 0.41mm, with a thickness of 0.035mm.
Compared with the prior art, the utility model has the following advantages:
1, the utility model constitutes circuit diagram using metal micro-strip line, has structure simple, is easily integrated the excellent of miniaturization
Point.
2, the utility model has the advantages that small in size, light-weight, bandwidth.
3, the satiable technical indicator of the utility model be cutoff frequency be 3GHz, ripple 0.5dB, 4.5GHz when damage
Consumption is not less than the field of microwave communication demand of 25dB, has the advantages that bandwidth, practical relative to other low-pass filters.
Below by drawings and examples, the utility model is further described in detail.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the filtering performance curve graph of the utility model.
Description of symbols:
1-medium substrate;2-third capacitor microstrip lines;3-the second capacitor microstrip line;
4-first capacitor microstrip lines;5-the first inductance microstrip line;6-the second inductance microstrip line;
7-signal input part microstrip lines;8-signal output end microstrip lines.
Specific embodiment
As shown in Figure 1, the utility model includes the medium substrate 1 that metal micro-strip line and lower surface are equipped with metal ground plate,
The metal micro-strip line is located at the upper surface of medium substrate 1, the metal micro-strip line include be rectangular parallelepiped structure signal it is defeated
Enter to hold microstrip line 7, first capacitor microstrip line 4, the first inductance microstrip line 5, the second capacitor microstrip line 3, the second inductance microstrip line 6,
Third capacitor microstrip line 2 and signal output end microstrip line 8, the signal input part microstrip line 7, first capacitor microstrip line 4,
One inductance microstrip line 5, the second capacitor microstrip line 3, the second inductance microstrip line 6, third capacitor microstrip line 2 and signal output end are micro-
It is successively laid with line 8 along the length direction central axes of medium substrate 1, one end and first of the signal input part microstrip line 7
The side of capacitor microstrip line 4 connects, and the other side of the first capacitor microstrip line 4 is connect with one end of the first inductance microstrip line 5,
The other end of the first inductance microstrip line 5 is connect with the side of the second capacitor microstrip line 3, the second capacitor microstrip line 3
The other side is connect with one end of the second inductance microstrip line 6, the other end and third capacitor microstrip line of the second inductance microstrip line 6
2 side connection, the other side of the third capacitor microstrip line 2 are connect with one end of signal output end microstrip line 8, the signal
Input terminal microstrip line 7, first capacitor microstrip line 4, the first inductance microstrip line 5, the second capacitor microstrip line 3, the second inductance microstrip line
6, a rich font band line, the signal input part micro-strip is collectively formed in third capacitor microstrip line 2 and signal output end microstrip line 8
Line 7, first capacitor microstrip line 4, the first inductance microstrip line 5, the second capacitor microstrip line 3, the second inductance microstrip line 6, third capacitor
Microstrip line 2 and signal output end microstrip line 8 are sticked on medium substrate 1 using photographic printing technique.
In the present embodiment, the left side of the rich font with line is concordant with the left side of medium substrate 1, the rich font band
The right side of line is concordant with the right side of medium substrate 1.
In the present embodiment, the medium substrate 1 is the high frequency substrate that model is Rogers RT/duroid 5880, described
The length of medium substrate 1 is 62.27mm, width 25.36mm, with a thickness of 1mm.
In the present embodiment, the signal input part microstrip line 7 and signal output end microstrip line 8 are brass microstrip line, institute
The equal in magnitude and length for stating signal input part microstrip line 7 and signal output end microstrip line 8 is 16.55mm, width 2.80mm,
With a thickness of 0.035mm.
In the present embodiment, the first capacitor microstrip line 4 and third capacitor microstrip line 2 are brass microstrip line, and described
The equal in magnitude and length of one capacitor microstrip line 4 and third capacitor microstrip line 2 is 5.08mm, width 12.68mm, with a thickness of
0.035mm。
In the present embodiment, the second capacitor microstrip line 3 is brass microstrip line and length is 7.57mm, width is
12.68mm, with a thickness of 0.035mm.
In the present embodiment, the first inductance microstrip line 5 and the second inductance microstrip line 6 are brass microstrip line, and described
The equal in magnitude and length of one inductance microstrip line 5 and the second inductance microstrip line 6 is 5.72mm, width 0.41mm, with a thickness of
0.035mm。
The working principle of the utility model are as follows: the utility model is the low-pass filter of surface microstrip line construction, including three
A equivalent capacity microstrip line and two equivalent inductance microstrip lines, filtering performance curve is as shown in Fig. 2, wherein S11For echo damage
Consumption, S21For the received value in receiving end, work as S21When dropping to -3dB, corresponding frequency is about 3GHz, as the cut-off of filter
Frequency, the S after 3GHz21Rapid decay, when arriving 4.5GBz, S21Value be -27.7232dB, in passband, S11Fluctuations
It is relatively steady very much, while intermediate zone S21Steeper, meet cutoff frequency be 3GHz, ripple 0.5dB, 4.5GBz when damage
Consumption is not less than the technical requirements of 25dB.
The above is only the preferred embodiment of the utility model, not imposes any restrictions to the utility model, all
According to the utility model technical spirit any simple modification, change and equivalent structure transformation to the above embodiments, still
Belong in the protection scope of technical solutions of the utility model.
Claims (7)
1. a kind of rich font structure microstrip line low-pass filter, it is characterised in that: be equipped with gold including metal micro-strip line and lower surface
Belong to the medium substrate (1) of earth plate, the metal micro-strip line is located at the upper surface of medium substrate (1), the metal micro-strip line packet
Include be rectangular parallelepiped structure signal input part microstrip line (7), first capacitor microstrip line (4), the first inductance microstrip line (5),
Two capacitor microstrip lines (3), the second inductance microstrip line (6), third capacitor microstrip line (2) and signal output end microstrip line (8), it is described
Signal input part microstrip line (7), first capacitor microstrip line (4), the first inductance microstrip line (5), the second capacitor microstrip line (3),
Two inductance microstrip lines (6), third capacitor microstrip line (2) and signal output end microstrip line (8) along medium substrate (1) length side
It is successively laid to central axes, one end of the signal input part microstrip line (7) is connect with the side of first capacitor microstrip line (4),
The other side of the first capacitor microstrip line (4) is connect with one end of the first inductance microstrip line (5), the first inductance microstrip line
(5) the other end is connect with the side of the second capacitor microstrip line (3), the other side and second of the second capacitor microstrip line (3)
One end of inductance microstrip line (6) connects, the other end of the second inductance microstrip line (6) and the one of third capacitor microstrip line (2)
Side connection, the other side of the third capacitor microstrip line (2) are connect with one end of signal output end microstrip line (8), the signal
Input terminal microstrip line (7), first capacitor microstrip line (4), the first inductance microstrip line (5), the second capacitor microstrip line (3), the second electricity
A rich font band line is collectively formed in sense microstrip line (6), third capacitor microstrip line (2) and signal output end microstrip line (8), described
Signal input part microstrip line (7), first capacitor microstrip line (4), the first inductance microstrip line (5), the second capacitor microstrip line (3),
Two inductance microstrip lines (6), third capacitor microstrip line (2) and signal output end microstrip line (8) are sticked in using photographic printing technique
On medium substrate (1).
2. a kind of rich font structure microstrip line low-pass filter described in accordance with the claim 1, it is characterised in that: the rich font
Left side with line is concordant with the left side of medium substrate (1), the right side of the right side of the rich font with line and medium substrate (1)
End face is concordant.
3. a kind of rich font structure microstrip line low-pass filter according to claim 1 or 2, it is characterised in that: given an account of
Matter substrate (1) is the high frequency substrate that model is Rogers RT/duroid 5880, and the length of the medium substrate (1) is
62.27mm, width 25.36mm, with a thickness of 1mm.
4. a kind of rich font structure microstrip line low-pass filter according to claim 1 or 2, it is characterised in that: the letter
Number input terminal microstrip line (7) and signal output end microstrip line (8) are brass microstrip line, the signal input part microstrip line (7)
Equal in magnitude and length with signal output end microstrip line (8) is 16.55mm, width 2.80mm, with a thickness of 0.035mm.
5. a kind of rich font structure microstrip line low-pass filter according to claim 1 or 2, it is characterised in that: described
One capacitor microstrip line (4) and third capacitor microstrip line (2) are brass microstrip line, the first capacitor microstrip line (4) and third
The equal in magnitude and length of capacitor microstrip line (2) is 5.08mm, width 12.68mm, with a thickness of 0.035mm.
6. a kind of rich font structure microstrip line low-pass filter according to claim 1 or 2, it is characterised in that: described
Two capacitor microstrip lines (3) be brass microstrip line and length be 7.57mm, width 12.68mm, with a thickness of 0.035mm.
7. a kind of rich font structure microstrip line low-pass filter according to claim 1 or 2, it is characterised in that: described
One inductance microstrip line (5) and the second inductance microstrip line (6) are brass microstrip line, the first inductance microstrip line (5) and second
The equal in magnitude and length of inductance microstrip line (6) is 5.72mm, width 0.41mm, with a thickness of 0.035mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821990541.3U CN209104333U (en) | 2018-11-30 | 2018-11-30 | A kind of rich font structure microstrip line low-pass filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821990541.3U CN209104333U (en) | 2018-11-30 | 2018-11-30 | A kind of rich font structure microstrip line low-pass filter |
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CN209104333U true CN209104333U (en) | 2019-07-12 |
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CN201821990541.3U Expired - Fee Related CN209104333U (en) | 2018-11-30 | 2018-11-30 | A kind of rich font structure microstrip line low-pass filter |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113078426A (en) * | 2021-03-12 | 2021-07-06 | 钱塘科技创新中心 | Low-pass filter and manufacturing method thereof |
CN113992176A (en) * | 2020-07-09 | 2022-01-28 | 大富科技(安徽)股份有限公司 | Filter and communication device |
-
2018
- 2018-11-30 CN CN201821990541.3U patent/CN209104333U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113992176A (en) * | 2020-07-09 | 2022-01-28 | 大富科技(安徽)股份有限公司 | Filter and communication device |
CN113078426A (en) * | 2021-03-12 | 2021-07-06 | 钱塘科技创新中心 | Low-pass filter and manufacturing method thereof |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190712 Termination date: 20201130 |
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