CN209088516U - Protect circuit and protection system - Google Patents

Protect circuit and protection system Download PDF

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Publication number
CN209088516U
CN209088516U CN201822010530.0U CN201822010530U CN209088516U CN 209088516 U CN209088516 U CN 209088516U CN 201822010530 U CN201822010530 U CN 201822010530U CN 209088516 U CN209088516 U CN 209088516U
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China
Prior art keywords
insulated gate
gate bipolar
bipolar transistor
grid
low level
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CN201822010530.0U
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Inventor
张帆
薛飞
张皎
孟海磊
刘明林
许勇
孙继军
牛永会
曹楠
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State Grid Shandong Electric Power Co Ltd
China EPRI Electric Power Engineering Co Ltd
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State Grid Shandong Electric Power Co Ltd
China EPRI Electric Power Engineering Co Ltd
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Abstract

The utility model provides a kind of protection circuit and protection system, comprising: capacitor, diode, the first, second, third insulated gate bipolar transistor and breaker;The collector of first insulated gate bipolar transistor is connect with one end of the cathode of diode and capacitor respectively;The emitter of first insulated gate bipolar transistor and the anode of diode connect;The collector of second insulated gate bipolar transistor is connect with the emitter of the emitter of the first insulated gate bipolar transistor and third insulated gate bipolar transistor respectively;The emitter of second insulated gate bipolar transistor is connect with the other end of the collector of third insulated gate bipolar transistor and capacitor respectively;One terminals of breaker are connect with the emitter of third insulated gate bipolar transistor;Another terminals of breaker are connect with the collector of third insulated gate bipolar transistor.The circuit can realize locking and the bypass functionality of inverter under DC Line Fault and change of current subelement failure.

Description

Protect circuit and protection system
Technical field
The utility model relates to flexible DC transmission technology fields, are based on tandem type voltage source converter more particularly, to one kind The DC Line Fault that has both of device removes the protection circuit quickly bypassed with change of current subelement and protection system.
Background technique
At present for there is the flexible HVDC transmission system of overhead transmission line, DC side is likely to occur failure.It is conventionally employed straight Circuit breaker trip fault current is flowed, realize DC Line Fault removing, economic cost height, and the possible malfunction of dc circuit breaker or is refused Dynamic, reliability is low.When catastrophe failure occurring inside change of current subelement, need to bypass on failure change of current subelement.Tradition is only adopted The bypass of failure change of current subelement is realized with closure AC circuit breaker, and response speed is slow, and system transient modelling recovery characteristics are poor, and exchange The possible malfunction of breaker or tripping, reliability are low.How to improve for catastrophe failure inside DC Line Fault and change of current subelement Response with the stability for improving flexible HVDC transmission system be a current problem urgently to be resolved.
Utility model content
The purpose of this utility model is that in view of the above problems in the prior art, a kind of protection circuit and protection are provided System is for solving the deficiencies in the prior art.
Specifically, the utility model embodiment provides a kind of protection circuit, comprising: capacitor, diode, the first insulated gate Bipolar junction transistor, the second insulated gate bipolar transistor, third insulated gate bipolar transistor and breaker;The open circuit Device includes a control signal and two terminals;
The collector of first insulated gate bipolar transistor respectively with the cathode of the diode and the capacitor One end be electrically connected;The emitter of first insulated gate bipolar transistor and the anode of the diode are electrically connected;
The collector of second insulated gate bipolar transistor respectively with first insulated gate bipolar transistor The emitter of emitter and the third insulated gate bipolar transistor is electrically connected;The second insulated gate bipolar crystal The other end of the emitter of pipe respectively with the collector of the third insulated gate bipolar transistor and the capacitor electrically connects It connects;
The emitter of one terminals of the breaker and the third insulated gate bipolar transistor is electrically connected;It is described The collector of another terminals of breaker and the third insulated gate bipolar transistor is electrically connected;
The diode and first insulated gate bipolar transistor form first switch;Second insulated gate bipolar Transistor npn npn and the third insulated gate bipolar transistor form second switch;The breaker composition third switch;
Input port of the both ends of the capacitor as protection circuit, two terminals of the breaker are as the protection The output port of circuit;
The grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, institute The control signal of the grid and the breaker of stating third insulated gate bipolar transistor is used to receive controller transmission Low and high level signal realize on and off processing.
As a further improvement of the above technical scheme, the grid of second insulated gate bipolar transistor and described the The grid of three insulated gate bipolar transistors is electrically connected.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker When control signal is respectively received high level, low level, low level, low level, the first switch conducting, described second is opened It closes and third switch is turned off.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker When control signal is respectively received low level, low level, low level, low level, the first switch, the second switch and The third switch is turned off.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker When control signal is respectively received low level, high level, high level, low level, the first switch and third switch It is turned off, the second switch conducting;Grid, second insulated gate bipolar when first insulated gate bipolar transistor The control signal of the grid of transistor npn npn, the grid of the third insulated gate bipolar transistor and the breaker is distinguished When receiving low level, low level, low level, high level, the first switch and the second switch are turned off, the third Switch conduction.
The utility model embodiment additionally provides a kind of protection system, comprising: above-described protection circuit is used for institute State the inspection that protection circuit provides the controller and the fault type for detecting flexible HVDC transmission system of low and high level signal Survey device;The detector and the controller are electrically connected;The controller respectively with it is described protection circuit in described first The grid of insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar The control signal of the grid of transistor npn npn and the breaker is electrically connected;
The controller detects that the presence or absence of failure and fault type issue corresponding control electricity according to the detector The ordinary mail number extremely protection circuit.
As a further improvement of the above technical scheme, when the detector does not detect failure, the controller Respectively to the grid of first insulated gate bipolar transistor, the grid, described of second insulated gate bipolar transistor The control signal of the grid of third insulated gate bipolar transistor and the breaker issue respectively high level, low level, Low level and low level.
As a further improvement of the above technical scheme, when the detector detects DC Line Fault, the controller Respectively to the grid of first insulated gate bipolar transistor, the grid, described of second insulated gate bipolar transistor The control signal of the grid of third insulated gate bipolar transistor and the breaker issue respectively low level, low level, Low level and low level.
As a further improvement of the above technical scheme, described when the detector detects change of current subelement failure Controller gives the grid of the grid of first insulated gate bipolar transistor, second insulated gate bipolar transistor respectively The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively low level, High level, high level and low level;After preset duration, the controller gives the first insulated gate bipolar crystal respectively The grid of pipe, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar transistor grid with And the control signal of the breaker issues low level, low level, low level and high level respectively.
As a further improvement of the above technical scheme, the preset duration is 3-5ms.
Using technical solution provided by the utility model, compared with existing well-known technique, at least have following beneficial to effect Fruit:
1, direct fault current circuit is blocked from topological structure angle by the control of cut-offfing to IGBT, realizes direct current event Barrier is removed.DC Line Fault removing is carried out compared to using dc circuit breaker, economy, response speed and reliability greatly improve, have Conducive to the safe and stable operation of system.
2, by increasing a two-way IGBT on-off branch, the quick bypass of change of current subelement is realized, while cooperating exchange Breaker is finally completed the bypass of change of current subelement.Bypass is realized compared to traditional only closure AC circuit breaker, and response speed is big It is big to improve, it reduces in failure process and the transient state of system is impacted, be conducive to the transient recovery characteristic of system, with conducive to system Safe and stable operation.
3, by being controlled with shutdown two groups of switching devices above and below DC side and opening for breaker, inverter is realized Normal operation, locking and bypass functionality, topological structure is clear, and control & protection strategy is concise, practical, economic cost It is low, high reliablity.
Detailed description of the invention
It, below will be to use required in embodiment in order to illustrate more clearly of the technical solution of the utility model embodiment Attached drawing be briefly described, it should be understood that the following drawings illustrates only some embodiments of the utility model, therefore should not be by Regard the restriction to range as, for those of ordinary skill in the art, without creative efforts, may be used also To obtain other relevant attached drawings according to these attached drawings.
Fig. 1 is the electrical connection diagram for the protection circuit that the utility model embodiment proposes;
Current path when Fig. 2 is nominal situation Idc > 0;
Current path when Fig. 3 is nominal situation Idc < 0;
Fig. 4 is DC Line Fault operating conditions protection act prior fault current path;
Fig. 5 is fault current nonpassage after DC Line Fault operating conditions protection act;
By-pass current access when Fig. 6 is change of current subelement fault condition instant of failure Idc > 0;
By-pass current access when Fig. 7 is change of current subelement fault condition instant of failure Idc < 0;
Fig. 8 be change of current subelement fault condition failure after certain moment Idc > 0 when by-pass current access;
Fig. 9 be change of current subelement fault condition failure after certain moment Idc < 0 when by-pass current access.
Specific embodiment
Embodiment 1
As shown in Figure 1, the utility model embodiment provides a kind of protection circuit, for being based on tandem type voltage source converter The DC Line Fault of device is removed and change of current subelement quickly bypasses.The protection circuit includes: capacitor C, diode D, the first insulation Grid bipolar junction transistor T1, the second insulated gate bipolar transistor T2, third insulated gate bipolar transistor T3 and breaker QF;Circuit breaker Q F includes a control signal and two terminals.
The collector of first insulated gate bipolar transistor T1 is electric with one end of the cathode of diode D and capacitor C respectively Property is connected to P1 node;The emitter of first insulated gate bipolar transistor T1 and the anode of diode D are electrically connected.Second absolutely The collector of edge grid bipolar junction transistor T2 insulate with the emitter of the first insulated gate bipolar transistor T1 and third respectively The emitter of grid bipolar junction transistor T3 is electrically connected at P2 node;The emitter of second insulated gate bipolar transistor T2 is distinguished P3 node is electrically connected at the collector of third insulated gate bipolar transistor T3 and the other end of capacitor C.
A terminals of circuit breaker Q F and the emitter of third insulated gate bipolar transistor T3 are electrically connected;Circuit breaker Q F Another terminals and third insulated gate bipolar transistor T3 collector be electrically connected.The both ends Ucp and Ucn of capacitor C makees For the input port for protecting circuit, output port of the two terminals Udcp and Udcn of circuit breaker Q F as protection circuit.
The grid of first insulated gate bipolar transistor T1, the grid of the second insulated gate bipolar transistor T2, third are exhausted The grid of edge grid bipolar junction transistor T3 and the control signal of circuit breaker Q F are used to what the controller outside reception was sent Low and high level signal realizes on and off processing.
The protection circuit includes first switch SD1, second switch SD2 and third switch SD3, first switch SD1 and second Switch SD2 is series connection, and second switch SD2 is in parallel with third switch SD3.Wherein first switch SD1 is the first insulated gate bipolar Transistor npn npn T1 and therewith antiparallel diode D, the trigger signal of first switch SD1 are TS1;Second switch SD2 is 2 anti- The triggering letter of second insulated gate bipolar transistor T2 and third insulated gate bipolar transistor T3, second switch SD2 in parallel Number be TS2;Third switch SD3 is circuit breaker Q F, and the trigger signal of third switch SD3 is TS3.Protection circuit is three terminal knots Structure is followed successively by the top terminal P1 node of first switch SD1, the connecting pin of first switch SD1 and second switch SD2 from top to bottom The bottom terminals P3 node of sub- P2 node and second switch SD2, wherein P1 node and change of current subelement DC bus capacitor are positive Ucp is connected, and P2 node is connected with change of current subelement direct-flow positive pole Udcp, P3 node and change of current subelement DC bus capacitor cathode Ucn and direct current cathode Udcn is connected.Capacitor C is used to establish the DC voltage of inverter.
Since the trigger signal of second switch SD2 is all TS2, i.e., the grid of two insulated gate bipolar transistors T2 and T3 Input signal is identical, it should can be brilliant by the grid of the second insulated gate bipolar transistor T2 and third insulated gate bipolar The grid of body pipe is electrically connected.It is introduced by a signal wire.In in the present embodiment, it is preferable that the second insulated gate is double Bipolar transistor T2 is identical with the model specification of third insulated gate bipolar transistor T3.In in the present embodiment, breaker is excellent Select AC circuit breaker.
First switch SD1, second switch SD2, the on, off of third switch SD3 and electric current, voltage feelings under various operating conditions Condition is as shown in table 1, and wherein Isd1, Isd2, Isd3 are respectively the electric current of SD1, SD2, SD3, and Usd1, Usd2, Usd3 are respectively The voltage of SD1, SD2, SD3, Idc are DC current, and Udc is DC voltage, and Uc is DC capacitor voltage.
The on, off and electric current, voltage condition table of SD1, SD2, SD3 under the various operating conditions of table 1
1) nominal situation
Under nominal situation, SD1 conducting, SD2 shutdown, SD3 shutdown, i.e. TS1=1, TS2=0, TS3=0.Isd1=at this time Idc, Isd2=0, Isd3=0;Usd1=0, Usd2=Udc, Usd3=Udc.
When Idc > 0, current path is as shown in Figure 2;When Idc < 0, current path is as shown in Figure 3.
2) DC Line Fault operating condition
Under DC Line Fault operating condition, SD1 shutdown, SD2 shutdown, SD3 shutdown, i.e. TS1=0, TS2=0, TS3=0.At this time Isd1=0, Isd2=0, Isd3=0;Usd1=Uc, Usd2=0, Usd3=0.
Control protection act prior fault electric current Iflt access for SD1 to fault point, as shown in Figure 4;Fault current Iflt without Access realizes DC Line Fault removing, as shown in Figure 5.
DC Line Fault is blocked from topological structure angle by the control of cut-offfing to the first insulated gate bipolar transistor T1 Current loop realizes that DC Line Fault is removed.DC Line Fault removing, economy, response speed are carried out compared to using dc circuit breaker And reliability greatly improves, and is conducive to the safe and stable operation of system.
3) change of current subelement fault condition
Under change of current subelement fault condition, instant of failure SD1 shutdown, SD2 is connected, and SD3 has little time to act, be held off, That is TS1=0, TS2=1, TS3=0, at this time Isd1=0, Isd2=Idc, Isd3=0;Usd1=Uc, Usd2=0, Usd3= 0.The quick bypass of change of current subelement is realized, by-pass current access is SD2 at this time, such as Fig. 6 (Idc>0), Fig. 7 (Idc<0) institute Show.
Certain moment after failure, SD3 start to act, and become being connected from shutdown, and subsequent SD2 becomes turning off from being connected, i.e. TS1= 0, TS2=0, TS3=1, it is DC current 0 that the electric current Isd1 of SD1, which is the electric current Isd2 of 0, SD2, at this time, and the electric current Isd3 of SD3 is Idc;The voltage Usd1 of SD1 is DC capacitor Uc, and the voltage Usd3 that the voltage Usd2 of SD2 is 0, SD3 is 0.Realize bypass electricity For stream by the transfer of SD2 to SD3, current path such as Fig. 8 (Idc>0), Fig. 9 (Idc<0) are shown.Certain moment after instant of failure and failure Interval when a length of 3-5ms.
By increasing two-way a second insulated gate bipolar transistor T2 and third insulated gate bipolar transistor T3 On-off branch, realize the quick bypass of change of current subelement, while cooperating circuit breaker Q F, be finally completed the side of change of current subelement Road.Bypass is realized compared to traditional only closure AC circuit breaker, and response speed is greatly improved, reduced in failure process to system Transient state impact, be conducive to the transient recovery characteristic of system, be conducive to system safe and stable operation.
Height protection circuit is real by being controlled with shutdown two groups of switching devices above and below DC side and opening for AC circuit breaker Normal operation, locking and the bypass functionality of inverter are showed, topological structure is clear, and control & protection strategy is concise, practicability By force, economic cost is low, high reliablity.
Protect circuit further include: the fuse for current-limiting protection;Fuse is connected on an output end of protection circuit.
Embodiment 2
The utility model embodiment additionally provides a kind of protection system, comprising: the protection circuit of the offer of embodiment 1 is used for The inspection of the controller and the fault type for detecting flexible HVDC transmission system of low and high level signal is provided to protection circuit Survey device;Detector and controller are electrically connected;Controller respectively with first insulated gate bipolar transistor in protection circuit The control of grid, the grid of the second insulated gate bipolar transistor, the grid of third insulated gate bipolar transistor and breaker Input terminal processed is electrically connected;Controller detects that the presence or absence of failure and fault type issue corresponding control electricity according to detector Ordinary mail number extremely protection circuit.Controller and detector can be implemented by using the prior art.Specifically, when detector does not detect When failure, controller give respectively the grid of the first insulated gate bipolar transistor, the second insulated gate bipolar transistor grid, The grid of third insulated gate bipolar transistor and the control signal of breaker issue high level, low level, low electricity respectively Gentle low level.When detector detects DC Line Fault, controller give respectively the first insulated gate bipolar transistor grid, The control of the grid of second insulated gate bipolar transistor, the grid of third insulated gate bipolar transistor and breaker inputs End issues low level, low level, low level and low level respectively.When detector detects change of current subelement failure, controller It is double to the grid of the first insulated gate bipolar transistor, the grid of the second insulated gate bipolar transistor, third insulated gate respectively The grid of bipolar transistor and the control signal of breaker issue low level, high level, high level and low level respectively;Through After crossing preset duration, controller gives the grid of the first insulated gate bipolar transistor, the second insulated gate bipolar transistor respectively Grid, the grid of third insulated gate bipolar transistor and the control signal of breaker issue low level, low electricity respectively Flat, low level and high level.Preset duration is 3-5ms.
It will be appreciated by those skilled in the art that the accompanying drawings are only schematic diagrams of a preferred implementation scenario, module in attached drawing or Process is not necessarily implemented necessary to the utility model.
It will be appreciated by those skilled in the art that the module in device in implement scene can be described according to implement scene into Row is distributed in the device of implement scene, can also be carried out corresponding change and is located at the one or more dresses for being different from this implement scene In setting.The module of above-mentioned implement scene can be merged into a module, can also be further split into multiple submodule.
Above-mentioned the utility model serial number is for illustration only, does not represent the superiority and inferiority of implement scene.Disclosed above is only this Several specific implementation scenes of utility model, still, the utility model is not limited to this, any those skilled in the art's energy Think of variation should all fall into the protection scope of the utility model.

Claims (10)

1. a kind of protection circuit characterized by comprising capacitor, diode, the first insulated gate bipolar transistor, second are absolutely Edge grid bipolar junction transistor, third insulated gate bipolar transistor and breaker;The breaker includes a control signal With two terminals;
The collector of first insulated gate bipolar transistor respectively with the cathode of the diode and the capacitor one End is electrically connected;The emitter of first insulated gate bipolar transistor and the anode of the diode are electrically connected;
The transmitting with first insulated gate bipolar transistor respectively of the collector of second insulated gate bipolar transistor The emitter of pole and the third insulated gate bipolar transistor is electrically connected;Second insulated gate bipolar transistor Emitter is electrically connected with the other end of the collector of the third insulated gate bipolar transistor and the capacitor respectively;
The emitter of one terminals of the breaker and the third insulated gate bipolar transistor is electrically connected;The open circuit The collector of another terminals of device and the third insulated gate bipolar transistor is electrically connected;
The diode and first insulated gate bipolar transistor form first switch;Second insulated gate bipolar is brilliant Body pipe and the third insulated gate bipolar transistor form second switch;The breaker composition third switch;
Input port of the both ends of the capacitor as protection circuit, two terminals of the breaker are as the protection circuit Output port;
The grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, described The control signal of the grid of three insulated gate bipolar transistors and the breaker is used to receive the height that controller is sent Low level signal realizes on and off processing.
2. protection circuit according to claim 1, which is characterized in that the grid of second insulated gate bipolar transistor It is electrically connected with the grid of the third insulated gate bipolar transistor.
3. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described When the control signal of breaker is respectively received high level, low level, low level, low level, the first switch conducting, institute It states second switch and third switch is turned off.
4. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described When the control signal of breaker is respectively received low level, low level, low level, low level, the first switch, described Two switches and third switch are turned off.
5. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described When the control signal of breaker is respectively received low level, high level, high level, low level, the first switch and described Third switch is turned off, the second switch conducting;When first insulated gate bipolar transistor grid, it is described second absolutely The control of the grid of edge grid bipolar junction transistor, the grid of the third insulated gate bipolar transistor and the breaker is defeated When entering end and being respectively received low level, low level, low level, high level, the first switch and the second switch are turned off, The third switch conduction.
6. a kind of protection system characterized by comprising protection circuit described in claim 1-5 any one is used for institute State the inspection that protection circuit provides the controller and the fault type for detecting flexible HVDC transmission system of low and high level signal Survey device;The detector and the controller are electrically connected;The controller respectively with it is described protection circuit in described first The grid of insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar The control signal of the grid of transistor npn npn and the breaker is electrically connected;
The controller detects that the presence or absence of failure and fault type issue corresponding control level and believe according to the detector Number to the protection circuit.
7. protection system according to claim 6, which is characterized in that when the detector does not detect failure, institute Controller be stated respectively to the grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively high level, Low level, low level and low level.
8. protection system according to claim 6, which is characterized in that when the detector detects DC Line Fault, institute Controller be stated respectively to the grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively low level, Low level, low level and low level.
9. protection system according to claim 6, which is characterized in that when the detector detects change of current subelement failure When, the controller gives the grid of first insulated gate bipolar transistor, the second insulated gate bipolar crystal respectively The control signal of the grid of pipe, the grid of the third insulated gate bipolar transistor and the breaker issues low respectively Level, high level, high level and low level;After preset duration, the controller gives first insulated gate bipolar respectively The grid of transistor npn npn, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar transistor The control signal of grid and the breaker issues low level, low level, low level and high level respectively.
10. protection system according to claim 9, which is characterized in that the preset duration is 3-5ms.
CN201822010530.0U 2018-11-30 2018-11-30 Protect circuit and protection system Active CN209088516U (en)

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Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109327008A (en) * 2018-11-30 2019-02-12 中电普瑞电力工程有限公司 Protect circuit and protection system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109327008A (en) * 2018-11-30 2019-02-12 中电普瑞电力工程有限公司 Protect circuit and protection system
CN109327008B (en) * 2018-11-30 2024-04-16 中电普瑞电力工程有限公司 Protection circuit and protection system

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