CN109327008A - Protect circuit and protection system - Google Patents
Protect circuit and protection system Download PDFInfo
- Publication number
- CN109327008A CN109327008A CN201811460081.8A CN201811460081A CN109327008A CN 109327008 A CN109327008 A CN 109327008A CN 201811460081 A CN201811460081 A CN 201811460081A CN 109327008 A CN109327008 A CN 109327008A
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- insulated gate
- gate bipolar
- bipolar transistor
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- low level
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- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
Abstract
The present invention provides a kind of protection circuit, comprising: capacitor, diode, the first, second, third insulated gate bipolar transistor and breaker;The collector of first insulated gate bipolar transistor is connect with one end of the cathode of diode and capacitor respectively;The emitter of first insulated gate bipolar transistor and the anode of diode connect;The collector of second insulated gate bipolar transistor is connect with the emitter of the emitter of the first insulated gate bipolar transistor and third insulated gate bipolar transistor respectively;The emitter of second insulated gate bipolar transistor is connect with the other end of the collector of third insulated gate bipolar transistor and capacitor respectively;One terminals of breaker are connect with the emitter of third insulated gate bipolar transistor;Another terminals of breaker are connect with the collector of third insulated gate bipolar transistor.The circuit can realize locking and the bypass functionality of inverter under DC Line Fault and change of current subelement failure, improve system reliability.
Description
Technical field
The present invention relates to flexible DC transmission technology field, more particularly, to a kind of based on tandem type voltage source converter
It has both DC Line Fault and removes the protection circuit quickly bypassed with change of current subelement and protection system.
Background technique
At present for there is the flexible HVDC transmission system of overhead transmission line, DC side is likely to occur failure.It is conventionally employed straight
Circuit breaker trip fault current is flowed, realize DC Line Fault removing, economic cost height, and the possible malfunction of dc circuit breaker or is refused
Dynamic, reliability is low.When catastrophe failure occurring inside change of current subelement, need to bypass on failure change of current subelement.Tradition is only adopted
The bypass of failure change of current subelement is realized with closure AC circuit breaker, and response speed is slow, and system transient modelling recovery characteristics are poor, and exchange
The possible malfunction of breaker or tripping, reliability are low.How to improve for catastrophe failure inside DC Line Fault and change of current subelement
Response with the stability for improving flexible HVDC transmission system be a current problem urgently to be resolved.
Summary of the invention
It is an object of the invention in view of the above problems in the prior art, provide a kind of protection circuit and protection system
For solving the deficiencies in the prior art.
Specifically, the embodiment of the invention provides a kind of protection circuits, comprising: capacitor, diode, the first insulated gate bipolar
Transistor npn npn, the second insulated gate bipolar transistor, third insulated gate bipolar transistor and breaker;The breaker packet
Include a control signal and two terminals;
The collector of first insulated gate bipolar transistor respectively with the cathode of the diode and the capacitor
One end be electrically connected;The emitter of first insulated gate bipolar transistor and the anode of the diode are electrically connected;
The collector of second insulated gate bipolar transistor respectively with first insulated gate bipolar transistor
The emitter of emitter and the third insulated gate bipolar transistor is electrically connected;The second insulated gate bipolar crystal
The other end of the emitter of pipe respectively with the collector of the third insulated gate bipolar transistor and the capacitor electrically connects
It connects;
The emitter of one terminals of the breaker and the third insulated gate bipolar transistor is electrically connected;It is described
The collector of another terminals of breaker and the third insulated gate bipolar transistor is electrically connected;
The diode and first insulated gate bipolar transistor form first switch;Second insulated gate bipolar
Transistor npn npn and the third insulated gate bipolar transistor form second switch;The breaker composition third switch;
Input port of the both ends of the capacitor as protection circuit, two terminals of the breaker are as the protection
The output port of circuit;
The grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, institute
The control signal of the grid and the breaker of stating third insulated gate bipolar transistor is used to receive controller transmission
Low and high level signal realize on and off processing.
As a further improvement of the above technical scheme, the grid of second insulated gate bipolar transistor and described the
The grid of three insulated gate bipolar transistors is electrically connected.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described
The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker
When control signal is respectively received high level, low level, low level, low level, the first switch conducting, described second is opened
It closes and third switch is turned off.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described
The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker
When control signal is respectively received low level, low level, low level, low level, the first switch, the second switch and
The third switch is turned off.
As a further improvement of the above technical scheme, when the grid of first insulated gate bipolar transistor, described
The grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and the breaker
When control signal is respectively received low level, high level, high level, low level, the first switch and third switch
It is turned off, the second switch conducting;Grid, second insulated gate bipolar when first insulated gate bipolar transistor
The control signal of the grid of transistor npn npn, the grid of the third insulated gate bipolar transistor and the breaker is distinguished
When receiving low level, low level, low level, high level, the first switch and the second switch are turned off, the third
Switch conduction.
The embodiment of the invention also provides a kind of protection systems, comprising: above-described protection circuit is used for the guarantor
Protection circuit provides the controller of low and high level signal and the detector of the fault type for detecting flexible HVDC transmission system;
The detector and the controller are electrically connected;The controller respectively with it is described protection circuit in first insulated gate
The grid of bipolar junction transistor, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar crystal
The control signal of the grid of pipe and the breaker is electrically connected;
The controller detects that the presence or absence of failure and fault type issue corresponding control electricity according to the detector
The ordinary mail number extremely protection circuit.
As a further improvement of the above technical scheme, when the detector does not detect failure, the controller
Respectively to the grid of first insulated gate bipolar transistor, the grid, described of second insulated gate bipolar transistor
The control signal of the grid of third insulated gate bipolar transistor and the breaker issue respectively high level, low level,
Low level and low level.
As a further improvement of the above technical scheme, when the detector detects DC Line Fault, the controller
Respectively to the grid of first insulated gate bipolar transistor, the grid, described of second insulated gate bipolar transistor
The control signal of the grid of third insulated gate bipolar transistor and the breaker issue respectively low level, low level,
Low level and low level.
As a further improvement of the above technical scheme, described when the detector detects change of current subelement failure
Controller gives the grid of the grid of first insulated gate bipolar transistor, second insulated gate bipolar transistor respectively
The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively low level,
High level, high level and low level;After preset duration, the controller gives the first insulated gate bipolar crystal respectively
The grid of pipe, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar transistor grid with
And the control signal of the breaker issues low level, low level, low level and high level respectively.
As a further improvement of the above technical scheme, the preset duration is 3-5ms.
Using technical solution provided by the invention, compared with existing well-known technique, at least have as follows
The utility model has the advantages that
1, direct fault current circuit is blocked from topological structure angle by the control of cut-offfing to IGBT, realizes direct current event
Barrier is removed.DC Line Fault removing is carried out compared to using dc circuit breaker, economy, response speed and reliability greatly improve, have
Conducive to the safe and stable operation of system.
2, by increasing a two-way IGBT on-off branch, the quick bypass of change of current subelement is realized, while cooperating exchange
Breaker is finally completed the bypass of change of current subelement.Bypass is realized compared to traditional only closure AC circuit breaker, and response speed is big
It is big to improve, it reduces in failure process and the transient state of system is impacted, be conducive to the transient recovery characteristic of system, with conducive to system
Safe and stable operation.
3, by being controlled with shutdown two groups of switching devices above and below DC side and opening for breaker, inverter is realized
Normal operation, locking and bypass functionality, topological structure is clear, and control & protection strategy is concise, practical, economic cost
It is low, high reliablity.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the electrical connection diagram for the protection circuit that the embodiment of the present invention proposes;
Current path when Fig. 2 is nominal situation Idc > 0;
Current path when Fig. 3 is nominal situation Idc < 0;
Fig. 4 is DC Line Fault operating conditions protection act prior fault current path;
Fig. 5 is fault current nonpassage after DC Line Fault operating conditions protection act;
By-pass current access when Fig. 6 is change of current subelement fault condition instant of failure Idc > 0;
By-pass current access when Fig. 7 is change of current subelement fault condition instant of failure Idc < 0;
Fig. 8 be change of current subelement fault condition failure after certain moment Idc > 0 when by-pass current access;
Fig. 9 be change of current subelement fault condition failure after certain moment Idc < 0 when by-pass current access.
Specific embodiment
Embodiment 1
As shown in Figure 1, the embodiment of the invention provides a kind of protection circuits, for based on tandem type voltage source converter
DC Line Fault is removed and change of current subelement quickly bypasses.The protection circuit includes: capacitor C, diode D, the first insulated gate pair
Bipolar transistor T1, the second insulated gate bipolar transistor T2, third insulated gate bipolar transistor T3 and circuit breaker Q F;It is disconnected
Road device QF includes a control signal and two terminals.
The collector of first insulated gate bipolar transistor T1 is electric with one end of the cathode of diode D and capacitor C respectively
Property is connected to P1 node;The emitter of first insulated gate bipolar transistor T1 and the anode of diode D are electrically connected.
The transmitting with the first insulated gate bipolar transistor T1 respectively of the collector of second insulated gate bipolar transistor T2
The emitter of pole and third insulated gate bipolar transistor T3 are electrically connected at P2 node;Second insulated gate bipolar transistor
The other end of the emitter of T2 respectively with the collector of third insulated gate bipolar transistor T3 and capacitor C is electrically connected at P3
Node.
A terminals of circuit breaker Q F and the emitter of third insulated gate bipolar transistor T3 are electrically connected;Circuit breaker Q F
Another terminals and third insulated gate bipolar transistor T3 collector be electrically connected.The both ends Ucp and Ucn of capacitor C makees
For the input port for protecting circuit, output port of the two terminals Udcp and Udcn of circuit breaker Q F as protection circuit.
The grid of first insulated gate bipolar transistor T1, the grid of the second insulated gate bipolar transistor T2, third are exhausted
The grid of edge grid bipolar junction transistor T3 and the control signal of circuit breaker Q F are used to what the controller outside reception was sent
Low and high level signal realizes on and off processing.
The protection circuit includes first switch SD1, second switch SD2 and third switch SD3, first switch SD1 and second
Switch SD2 is series connection, and second switch SD2 is in parallel with third switch SD3.Wherein first switch SD1 is the first insulated gate bipolar
Transistor npn npn T1 and therewith antiparallel diode D, the trigger signal of first switch SD1 are TS1;Second switch SD2 is 2 anti-
The triggering letter of second insulated gate bipolar transistor T2 and third insulated gate bipolar transistor T3, second switch SD2 in parallel
Number be TS2;Third switch SD3 is circuit breaker Q F, and the trigger signal of third switch SD3 is TS3.Protection circuit is three terminal knots
Structure is followed successively by the top terminal P1 node of first switch SD1, the connecting pin of first switch SD1 and second switch SD2 from top to bottom
The bottom terminals P3 node of sub- P2 node and second switch SD2, wherein P1 node and change of current subelement DC bus capacitor are positive
Ucp is connected, and P2 node is connected with change of current subelement direct-flow positive pole Udcp, P3 node and change of current subelement DC bus capacitor cathode
Ucn and direct current cathode Udcn is connected.
Capacitor C is used to establish the DC voltage of inverter.
Since the trigger signal of second switch SD2 is all TS2, i.e., the grid of two insulated gate bipolar transistors T2 and T3
Input signal is identical, it should can be brilliant by the grid of the second insulated gate bipolar transistor T2 and third insulated gate bipolar
The grid of body pipe is electrically connected.It is introduced by a signal wire.In in the present embodiment, it is preferable that the second insulated gate is double
Bipolar transistor T2 is identical with the model specification of third insulated gate bipolar transistor T3.
In in the present embodiment, the preferred AC circuit breaker of breaker.
First switch SD1, second switch SD2, the on, off of third switch SD3 and electric current, voltage feelings under various operating conditions
Condition is as shown in table 1, and wherein Isd1, Isd2, Isd3 are respectively the electric current of SD1, SD2, SD3, and Usd1, Usd2, Usd3 are respectively
The voltage of SD1, SD2, SD3, Idc are DC current, and Udc is DC voltage, and Uc is DC capacitor voltage.
The on, off and electric current, voltage condition table of SD1, SD2, SD3 under the various operating conditions of table 1
1) nominal situation
Under nominal situation, SD1 conducting, SD2 shutdown, SD3 shutdown, i.e. TS1=1, TS2=0, TS3=0.Isd1=at this time
Idc, Isd2=0, Isd3=0;Usd1=0, Usd2=Udc, Usd3=Udc.
When Idc > 0, current path is as shown in Figure 2;When Idc < 0, current path is as shown in Figure 3.
2) DC Line Fault operating condition
Under DC Line Fault operating condition, SD1 shutdown, SD2 shutdown, SD3 shutdown, i.e. TS1=0, TS2=0, TS3=0.At this time
Isd1=0, Isd2=0, Isd3=0;Usd1=Uc, Usd2=0, Usd3=0.
Control protection act prior fault electric current Iflt access for SD1 to fault point, as shown in Figure 4;Fault current Iflt without
Access realizes DC Line Fault removing, as shown in Figure 5.
DC Line Fault is blocked from topological structure angle by the control of cut-offfing to the first insulated gate bipolar transistor T1
Current loop realizes that DC Line Fault is removed.DC Line Fault removing, economy, response speed are carried out compared to using dc circuit breaker
And reliability greatly improves, and is conducive to the safe and stable operation of system.
3) change of current subelement fault condition
Under change of current subelement fault condition, instant of failure SD1 shutdown, SD2 is connected, and SD3 has little time to act, be held off,
That is TS1=0, TS2=1, TS3=0, at this time Isd1=0, Isd2=Idc, Isd3=0;Usd1=Uc, Usd2=0, Usd3=
0.The quick bypass of change of current subelement is realized, by-pass current access is SD2 at this time, such as Fig. 6 (Idc>0), Fig. 7 (Idc<0) institute
Show.
Certain moment after failure, SD3 start to act, and become being connected from shutdown, and subsequent SD2 becomes turning off from being connected, i.e. TS1=
0, TS2=0, TS3=1, it is DC current 0 that the electric current Isd1 of SD1, which is the electric current Isd2 of 0, SD2, at this time, and the electric current Isd3 of SD3 is
Idc;The voltage Usd1 of SD1 is DC capacitor Uc, and the voltage Usd3 that the voltage Usd2 of SD2 is 0, SD3 is 0.Realize bypass electricity
For stream by the transfer of SD2 to SD3, current path such as Fig. 8 (Idc>0), Fig. 9 (Idc<0) are shown.Certain moment after instant of failure and failure
Interval when a length of 3-5ms.
By increasing two-way a second insulated gate bipolar transistor T2 and third insulated gate bipolar transistor T3
On-off branch, realize the quick bypass of change of current subelement, while cooperating circuit breaker Q F, be finally completed the side of change of current subelement
Road.Bypass is realized compared to traditional only closure AC circuit breaker, and response speed is greatly improved, reduced in failure process to system
Transient state impact, be conducive to the transient recovery characteristic of system, be conducive to system safe and stable operation.
Height protection circuit is real by being controlled with shutdown two groups of switching devices above and below DC side and opening for AC circuit breaker
Normal operation, locking and the bypass functionality of inverter are showed, topological structure is clear, and control & protection strategy is concise, practicability
By force, economic cost is low, high reliablity.
Protect circuit further include: the fuse for current-limiting protection;Fuse is connected on an output end of protection circuit.
Embodiment 2
The embodiment of the invention also provides a kind of protection systems, comprising: the protection circuit of the offer of embodiment 1 is used for guarantor
Protection circuit provides the controller of low and high level signal and the detector of the fault type for detecting flexible HVDC transmission system;
Detector and controller are electrically connected;Controller respectively with protection circuit in the first insulated gate bipolar transistor grid,
The control of the grid of second insulated gate bipolar transistor, the grid of third insulated gate bipolar transistor and breaker inputs
End is electrically connected;Controller detects that the presence or absence of failure and fault type issue corresponding control level signal according to detector
To protection circuit.Controller and detector can be implemented by using the prior art.Specifically, when detector does not detect failure
When, controller gives the grid of the first insulated gate bipolar transistor, the grid of the second insulated gate bipolar transistor, third respectively
The grid of insulated gate bipolar transistor and the control signal of breaker issue respectively high level, low level, low level and
Low level.When detector detects DC Line Fault, controller gives the grid of the first insulated gate bipolar transistor, second respectively
The control signal of the grid of insulated gate bipolar transistor, the grid of third insulated gate bipolar transistor and breaker point
Low level, low level, low level and low level are not issued.When detector detects change of current subelement failure, controller difference
To the grid of the first insulated gate bipolar transistor, the grid of the second insulated gate bipolar transistor, third insulated gate bipolar
The grid of transistor and the control signal of breaker issue low level, high level, high level and low level respectively;By pre-
If after duration, controller gives the grid of the grid of the first insulated gate bipolar transistor, the second insulated gate bipolar transistor respectively
The control signal of pole, the grid of third insulated gate bipolar transistor and breaker issues low level, low level, low respectively
Level and high level.Preset duration is 3-5ms.
It will be appreciated by those skilled in the art that the accompanying drawings are only schematic diagrams of a preferred implementation scenario, module in attached drawing or
Process is not necessarily implemented necessary to the present invention.
It will be appreciated by those skilled in the art that the module in device in implement scene can be described according to implement scene into
Row is distributed in the device of implement scene, can also be carried out corresponding change and is located at the one or more dresses for being different from this implement scene
In setting.The module of above-mentioned implement scene can be merged into a module, can also be further split into multiple submodule.
Aforementioned present invention serial number is for illustration only, does not represent the superiority and inferiority of implement scene.Disclosed above is only the present invention
Several specific implementation scenes, still, the present invention is not limited to this, and the changes that any person skilled in the art can think of is all
Protection scope of the present invention should be fallen into.
Claims (10)
1. a kind of protection circuit characterized by comprising capacitor, diode, the first insulated gate bipolar transistor, second are absolutely
Edge grid bipolar junction transistor, third insulated gate bipolar transistor and breaker;The breaker includes a control signal
With two terminals;
The collector of first insulated gate bipolar transistor respectively with the cathode of the diode and the capacitor one
End is electrically connected;The emitter of first insulated gate bipolar transistor and the anode of the diode are electrically connected;
The transmitting with first insulated gate bipolar transistor respectively of the collector of second insulated gate bipolar transistor
The emitter of pole and the third insulated gate bipolar transistor is electrically connected;Second insulated gate bipolar transistor
Emitter is electrically connected with the other end of the collector of the third insulated gate bipolar transistor and the capacitor respectively;
The emitter of one terminals of the breaker and the third insulated gate bipolar transistor is electrically connected;The open circuit
The collector of another terminals of device and the third insulated gate bipolar transistor is electrically connected;
The diode and first insulated gate bipolar transistor form first switch;Second insulated gate bipolar is brilliant
Body pipe and the third insulated gate bipolar transistor form second switch;The breaker composition third switch;
Input port of the both ends of the capacitor as protection circuit, two terminals of the breaker are as the protection circuit
Output port;
The grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, described
The control signal of the grid of three insulated gate bipolar transistors and the breaker is used to receive the height that controller is sent
Low level signal realizes on and off processing.
2. protection circuit according to claim 1, which is characterized in that the grid of second insulated gate bipolar transistor
It is electrically connected with the grid of the third insulated gate bipolar transistor.
3. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor
Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described
When the control signal of breaker is respectively received high level, low level, low level, low level, the first switch conducting, institute
It states second switch and third switch is turned off.
4. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor
Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described
When the control signal of breaker is respectively received low level, low level, low level, low level, the first switch, described
Two switches and third switch are turned off.
5. protection circuit according to claim 1, which is characterized in that when the grid of first insulated gate bipolar transistor
Pole, the grid of second insulated gate bipolar transistor, the grid of the third insulated gate bipolar transistor and described
When the control signal of breaker is respectively received low level, high level, high level, low level, the first switch and described
Third switch is turned off, the second switch conducting;When first insulated gate bipolar transistor grid, it is described second absolutely
The control of the grid of edge grid bipolar junction transistor, the grid of the third insulated gate bipolar transistor and the breaker is defeated
When entering end and being respectively received low level, low level, low level, high level, the first switch and the second switch are turned off,
The third switch conduction.
6. a kind of protection system characterized by comprising protection circuit described in claim 1-5 any one is used for institute
State the inspection that protection circuit provides the controller and the fault type for detecting flexible HVDC transmission system of low and high level signal
Survey device;The detector and the controller are electrically connected;The controller respectively with it is described protection circuit in described first
The grid of insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar
The control signal of the grid of transistor npn npn and the breaker is electrically connected;
The controller detects that the presence or absence of failure and fault type issue corresponding control level and believe according to the detector
Number to the protection circuit.
7. protection system according to claim 6, which is characterized in that when the detector does not detect failure, institute
Controller be stated respectively to the grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor
The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively high level,
Low level, low level and low level.
8. protection system according to claim 6, which is characterized in that when the detector detects DC Line Fault, institute
Controller be stated respectively to the grid of first insulated gate bipolar transistor, the grid of second insulated gate bipolar transistor
The control signal of pole, the grid of the third insulated gate bipolar transistor and the breaker issue respectively low level,
Low level, low level and low level.
9. protection system according to claim 6, which is characterized in that when the detector detects change of current subelement failure
When, the controller gives the grid of first insulated gate bipolar transistor, the second insulated gate bipolar crystal respectively
The control signal of the grid of pipe, the grid of the third insulated gate bipolar transistor and the breaker issues low respectively
Level, high level, high level and low level;After preset duration, the controller gives first insulated gate bipolar respectively
The grid of transistor npn npn, the grid of second insulated gate bipolar transistor, the third insulated gate bipolar transistor
The control signal of grid and the breaker issues low level, low level, low level and high level respectively.
10. protection system according to claim 9, which is characterized in that the preset duration is 3-5ms.
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KR20150071576A (en) * | 2013-12-18 | 2015-06-26 | 엘에스산전 주식회사 | circuit of checking IGBT Module failure through monitoring the gate voltage |
CN105281555A (en) * | 2015-11-05 | 2016-01-27 | 特变电工新疆新能源股份有限公司 | Module topology and MMC flexible direct-current transmission system based on same |
CN209088516U (en) * | 2018-11-30 | 2019-07-09 | 中电普瑞电力工程有限公司 | Protect circuit and protection system |
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2018
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KR20000060439A (en) * | 1999-03-16 | 2000-10-16 | 차동해 | Device for driving high voltage igbt |
CN103346763A (en) * | 2013-06-18 | 2013-10-09 | 山东大学(威海) | Insulated gate bipolar transistor drive protective circuit |
KR20150071576A (en) * | 2013-12-18 | 2015-06-26 | 엘에스산전 주식회사 | circuit of checking IGBT Module failure through monitoring the gate voltage |
CN105281555A (en) * | 2015-11-05 | 2016-01-27 | 特变电工新疆新能源股份有限公司 | Module topology and MMC flexible direct-current transmission system based on same |
CN209088516U (en) * | 2018-11-30 | 2019-07-09 | 中电普瑞电力工程有限公司 | Protect circuit and protection system |
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