CN109327008B - Protection circuit and protection system - Google Patents
Protection circuit and protection system Download PDFInfo
- Publication number
- CN109327008B CN109327008B CN201811460081.8A CN201811460081A CN109327008B CN 109327008 B CN109327008 B CN 109327008B CN 201811460081 A CN201811460081 A CN 201811460081A CN 109327008 B CN109327008 B CN 109327008B
- Authority
- CN
- China
- Prior art keywords
- bipolar transistor
- insulated gate
- gate bipolar
- grid electrode
- low level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000006872 improvement Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Protection Of Static Devices (AREA)
Abstract
The present invention provides a protection circuit, comprising: the circuit breaker comprises a capacitor, a diode, a first insulated gate bipolar transistor, a second insulated gate bipolar transistor and a third insulated gate bipolar transistor; the collector of the first insulated gate bipolar transistor is connected with the cathode of the diode and one end of the capacitor respectively; an emitter of the first insulated gate bipolar transistor is connected with an anode of the diode; the collector of the second insulated gate bipolar transistor is respectively connected with the emitter of the first insulated gate bipolar transistor and the emitter of the third insulated gate bipolar transistor; the emitter of the second insulated gate bipolar transistor is respectively connected with the collector of the third insulated gate bipolar transistor and the other end of the capacitor; one wiring terminal of the circuit breaker is connected with the emitter of the third insulated gate bipolar transistor; the other terminal of the circuit breaker is connected to the collector of the third insulated gate bipolar transistor. The circuit can realize the locking and bypass functions of the converter under the faults of direct current and converter subunits, and improves the reliability of the system.
Description
Technical Field
The invention relates to the technical field of flexible direct current transmission, in particular to a protection circuit and a protection system which are based on a cascading voltage source converter and have direct current fault clearing and a quick bypass of a converter subunit.
Background
At present, for a flexible direct current transmission system with an overhead line, the direct current side is likely to be faulty. The traditional direct current breaker is adopted to cut off fault current, so that direct current fault clearing is realized, the economic cost is high, and the direct current breaker can malfunction or refusal to operate, so that the reliability is low. When a severe fault occurs inside the converter subunit, the faulty converter subunit needs to be bypassed. The traditional method only adopts a closed alternating current breaker to realize the bypass of the fault current converting subunit, has low response speed and poor transient recovery characteristic of the system, and the alternating current breaker can malfunction or refusal to operate, so that the reliability is low. How to improve the response to dc faults and severe faults inside the converter subunit to improve the stability of the flexible dc power transmission system is a problem to be solved currently.
Disclosure of Invention
The present invention is directed to solving the above-mentioned problems of the prior art, and provides a protection circuit and a protection system for solving the deficiencies of the prior art.
Specifically, an embodiment of the present invention provides a protection circuit, including: the device comprises a capacitor, a diode, a first insulated gate bipolar transistor, a second insulated gate bipolar transistor, a third insulated gate bipolar transistor and a circuit breaker; the circuit breaker comprises a control input end and two wiring terminals;
the collector electrode of the first insulated gate bipolar transistor is electrically connected with the cathode of the diode and one end of the capacitor respectively; the emitter of the first insulated gate bipolar transistor is electrically connected with the anode of the diode;
the collector of the second insulated gate bipolar transistor is electrically connected with the emitter of the first insulated gate bipolar transistor and the emitter of the third insulated gate bipolar transistor respectively; the emitter of the second insulated gate bipolar transistor is respectively and electrically connected with the collector of the third insulated gate bipolar transistor and the other end of the capacitor;
one wiring terminal of the circuit breaker is electrically connected with the emitter of the third insulated gate bipolar transistor; the other terminal of the circuit breaker is electrically connected with the collector electrode of the third insulated gate bipolar transistor;
the diode and the first insulated gate bipolar transistor form a first switch; the second insulated gate bipolar transistor and the third insulated gate bipolar transistor form a second switch; the circuit breaker forms a third switch;
two ends of the capacitor are used as input ports of a protection circuit, and two wiring terminals of the circuit breaker are used as output ports of the protection circuit;
the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker are all used for receiving high-low level signals sent by the controller to realize on-off processing.
As a further improvement of the above technical solution, the gate of the second insulated gate bipolar transistor is electrically connected to the gate of the third insulated gate bipolar transistor.
As a further improvement of the above technical solution, when the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input terminal of the circuit breaker receive a high level, a low level, and a low level, respectively, the first switch is turned on, and the second switch and the third switch are turned off.
As a further improvement of the above technical solution, when the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input terminal of the circuit breaker receive a low level, and a low level, respectively, the first switch, the second switch, and the third switch are turned off.
As a further improvement of the above technical solution, when the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input terminal of the circuit breaker receive a low level, a high level, and a low level, respectively, the first switch and the third switch are turned off, and the second switch is turned on; when the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker respectively receive low level, low level and high level, the first switch and the second switch are both turned off, and the third switch is turned on.
The embodiment of the invention also provides a protection system, which comprises: the protection circuit, the controller for providing high-low level signals for the protection circuit and the detector for detecting the fault type of the flexible direct current transmission system are described above; the detector is electrically connected with the controller; the controller is respectively and electrically connected with the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker in the protection circuit;
and the controller issues a corresponding control level signal to the protection circuit according to the existence of the fault detected by the detector and the fault type.
As a further improvement of the above technical solution, when the detector does not detect a fault, the controller issues a high level, a low level and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor and the control input terminal of the circuit breaker, respectively.
As a further improvement of the above technical solution, when the detector detects a dc fault, the controller issues a low level, a low level and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor and the control input terminal of the circuit breaker, respectively.
As a further improvement of the above technical solution, when the detector detects a failure of the converter subunit, the controller issues a low level, a high level and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor and the control input terminal of the circuit breaker, respectively; after a preset period of time, the controller respectively sends low level, low level and high level to the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker.
As a further improvement of the above technical solution, the preset duration is 3-5ms.
Compared with the prior art, the technical proposal provided by the invention at least has the following steps
The beneficial effects are that:
1. from the topological structure perspective, the direct-current fault current loop is blocked by controlling the on-off of the IGBT, so that the direct-current fault is cleared. Compared with the direct current breaker adopted for clearing the direct current fault, the economical efficiency, the response speed and the reliability are greatly improved, and the safe and stable operation of the system is facilitated.
2. By adding a bidirectional IGBT on-off branch, the quick bypass of the converter subunit is realized, and meanwhile, the bypass of the converter subunit is finally completed by matching with an alternating current breaker. Compared with the traditional method that only the alternating current circuit breaker is closed to realize bypass, the response speed is greatly improved, transient impact on the system in the fault process is reduced, the transient recovery characteristic of the system is facilitated, and the safe and stable operation of the system is facilitated.
3. Through the on-off control of the upper and lower groups of switching devices and the circuit breakers on the direct current side, the normal operation, locking and bypass functions of the converter are realized, the topological structure is clear, the control and protection strategy is simple and clear, the practicability is strong, the economic cost is low, and the reliability is high.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is an electrical connection diagram of a protection circuit according to an embodiment of the present invention;
FIG. 2 shows the current path during normal operation Idc > 0;
FIG. 3 shows the current path under normal conditions Idc < 0;
FIG. 4 is a fault current path prior to a DC fault condition control protection event;
FIG. 5 is a schematic diagram of a fault current no-path after a DC fault condition control protection action;
FIG. 6 is a bypass current path when the converter subunit fault condition fault instant Idc > 0;
FIG. 7 is a bypass current path for a converter subunit fault condition at fault instants Idc < 0;
FIG. 8 is a bypass current path at a time Idc >0 after a commutation sub-unit fault condition has failed;
fig. 9 is a bypass current path at some point Idc <0 after a commutation sub-unit fault condition has failed.
Detailed Description
Example 1
As shown in fig. 1, the embodiment of the invention provides a protection circuit for clearing direct current faults based on a cascaded voltage source converter and quickly bypassing a converter subunit. The protection circuit includes: a capacitor C, a diode D, a first insulated gate bipolar transistor T1, a second insulated gate bipolar transistor T2, a third insulated gate bipolar transistor T3 and a breaker QF; the circuit breaker QF includes a control input and two terminals.
The collector of the first insulated gate bipolar transistor T1 is electrically connected with the cathode of the diode D and one end of the capacitor C respectively and is connected with the P1 node; the emitter of the first insulated gate bipolar transistor T1 is electrically connected to the anode of the diode D.
The collector of the second insulated gate bipolar transistor T2 is electrically connected with the emitter of the first insulated gate bipolar transistor T1 and the emitter of the third insulated gate bipolar transistor T3 respectively to the P2 node; the emitter of the second insulated gate bipolar transistor T2 is electrically connected to the P3 node, respectively, with the collector of the third insulated gate bipolar transistor T3 and the other end of the capacitor C.
One wiring terminal of the breaker QF is electrically connected with the emitter of the third insulated gate bipolar transistor T3; the other terminal of the breaker QF is electrically connected to the collector of the third insulated gate bipolar transistor T3. Both ends Ucp and Ucn of the capacitor C are used as input ports of the protection circuit, and both terminals Udcp and Udcn of the breaker QF are used as output ports of the protection circuit.
The grid electrode of the first insulated gate bipolar transistor T1, the grid electrode of the second insulated gate bipolar transistor T2, the grid electrode of the third insulated gate bipolar transistor T3 and the control input end of the breaker QF are all used for receiving high-low level signals sent by an external controller to realize on-off processing.
The protection circuit includes a first switch SD1, a second switch SD2, and a third switch SD3, where the first switch SD1 and the second switch SD2 are connected in series, and the second switch SD2 and the third switch SD3 are connected in parallel. The first switch SD1 is a first insulated gate bipolar transistor T1 and a diode D which is in antiparallel connection with the first insulated gate bipolar transistor T1, and a trigger signal of the first switch SD1 is TS1; the second switch SD2 is 2 antiparallel second insulated gate bipolar transistors T2 and third insulated gate bipolar transistors T3, and the trigger signal of the second switch SD2 is TS2; the third switch SD3 is a breaker QF, and the trigger signal of the third switch SD3 is TS3. The protection circuit is of a three-terminal structure, and comprises a top terminal P1 node of a first switch SD1, a connecting terminal P2 node of the first switch SD1 and a connecting terminal P3 node of a second switch SD2 and a bottom terminal P3 node of the second switch SD2 from top to bottom in sequence, wherein the P1 node is connected with a direct-current side capacitor anode Ucp of a converter subunit, the P2 node is connected with a direct-current anode Udcp of the converter subunit, and the P3 node is connected with a direct-current side capacitor cathode Ucn and a direct-current cathode Udcn of the converter subunit.
The capacitor C is used to establish the dc voltage of the inverter.
Since the trigger signals of the second switch SD2 are TS2, i.e. the gate input signals of the two insulated gate bipolar transistors T2 and T3 are identical, it should be possible to electrically connect the gate of the second insulated gate bipolar transistor T2 with the gate of the third insulated gate bipolar transistor. Is introduced through a signal wire. In the present embodiment, it is preferable that the second insulated gate bipolar transistor T2 and the third insulated gate bipolar transistor T3 are identical in model specification.
In the present embodiment, the circuit breaker is preferably an ac circuit breaker.
The on/off states, current and voltage conditions of the first switch SD1, the second switch SD2 and the third switch SD3 under various working conditions are shown in table 1, wherein Isd1, isd2 and Isd3 are currents of SD1, SD2 and SD3, and Usd1, usd2 and Usd3 are voltages of SD1, SD2 and SD3, idc is direct current, udc is direct current and Uc is direct capacitor voltage.
TABLE 1 on/off and current/voltage conditions of SD1, SD2, SD3 under various conditions
1) Normal working condition
Under normal operation, SD1 is on, SD2 is off, and SD3 is off, i.e., ts1=1, ts2=0, ts3=0. In this case isd1=idc, isd2=0, isd3=0; usd1=0, usd2=udc, usd3=udc.
When Idc >0, the current path is as shown in FIG. 2; when Idc <0, the current path is as shown in fig. 3.
2) DC fault condition
Under the direct current fault working condition, SD1 is turned off, SD2 is turned off, and SD3 is turned off, namely ts1=0, ts2=0, ts3=0. Isd1=0, isd2=0, isd3=0 at this time; usd1=uc, usd2=0, usd3=0.
The fault current Iflt path before the protection action is controlled to be SD1 to a fault point, as shown in fig. 4; the fault current Iflt has no path, and the direct current fault clearing is realized, as shown in fig. 5.
From the topological structure perspective, the direct-current fault current loop is blocked by the on-off control of the first insulated gate bipolar transistor T1, so that the direct-current fault clearing is realized. Compared with the direct current breaker adopted for clearing the direct current fault, the economical efficiency, the response speed and the reliability are greatly improved, and the safe and stable operation of the system is facilitated.
3) Converter subunit fault condition
Under the fault working condition of the converter subunit, the fault moment SD1 is turned off, the SD2 is turned on, the SD3 is not in operation, and the converter subunit is turned off, namely TS1 = 0, TS2 = 1 and TS3 = 0, and at the moment, isd1 = 0, isd2 = Idc and Isd3 = 0; usd1=uc, usd2=0, usd3=0. A fast bypass of the commutation sub-cell is achieved, where the bypass current path is SD2, as shown in fig. 6 (Idc > 0), fig. 7 (Idc < 0).
At a certain moment after the fault, SD3 starts to act, and is changed from off to on, and then SD2 is changed from on to off, that is, ts1=0, ts2=0, ts3=1, at this time, current Isd1 of SD1 is 0, current Isd2 of SD2 is direct current 0, and current Isd3 of SD3 is Idc; the voltage Usd1 of SD1 is the dc capacitor Uc, the voltage Usd2 of SD2 is 0, and the voltage Usd3 of SD3 is 0. The transfer of the bypass current from SD2 to SD3 is realized, and the current paths are shown in fig. 8 (Idc > 0) and fig. 9 (Idc < 0). The time interval between the moment of the fault and the moment after the fault is 3-5ms.
The on-off branch of the second insulated gate bipolar transistor T2 and the third insulated gate bipolar transistor T3 in two directions is added, so that the quick bypass of the converter subunit is realized, and meanwhile, the bypass of the converter subunit is finally completed by matching with the circuit breaker QF. Compared with the traditional method that only the alternating current circuit breaker is closed to realize bypass, the response speed is greatly improved, transient impact on the system in the fault process is reduced, the transient recovery characteristic of the system is facilitated, and the safe and stable operation of the system is facilitated.
The high protection circuit realizes the normal operation, locking and bypass functions of the converter through the on-off control of the upper and lower groups of switching devices on the direct current side and the alternating current circuit breaker, has clear topological structure, simple and clear control and protection strategy, strong practicality, low economic cost and high reliability.
The protection circuit further includes: a fuse for current limiting protection; the fuse is connected in series with an output end of the protection circuit.
Example 2
The embodiment of the invention also provides a protection system, which comprises: the protection circuit provided in embodiment 1, a controller for providing a high-low level signal to the protection circuit, and a detector for detecting a fault type of the flexible direct current power transmission system; the detector is electrically connected with the controller; the controller is respectively and electrically connected with the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker in the protection circuit; the controller issues corresponding control level signals to the protection circuit according to whether the detector detects the fault or not and the fault type. Both the controller and the detector can be implemented using prior art techniques. Specifically, when the detector does not detect a fault, the controller issues a high level, a low level, and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input terminal of the circuit breaker, respectively. When the detector detects a direct current fault, the controller respectively sends low level, low level and low level to the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker. When the detector detects a fault of the converter subunit, the controller respectively sends low level, high level and low level to the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker; after a preset time period, the controller respectively sends low level, low level and high level to the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker. The preset duration is 3-5ms.
Those skilled in the art will appreciate that the drawing is merely a schematic illustration of a preferred implementation scenario and that the modules or flows in the drawing are not necessarily required to practice the invention.
Those skilled in the art will appreciate that modules in an apparatus in an implementation scenario may be distributed in an apparatus in an implementation scenario according to an implementation scenario description, or that corresponding changes may be located in one or more apparatuses different from the implementation scenario. The modules of the implementation scenario may be combined into one module, or may be further split into a plurality of sub-modules.
The above-mentioned inventive sequence numbers are merely for description and do not represent advantages or disadvantages of the implementation scenario. The foregoing disclosure is merely illustrative of some embodiments of the invention, and the invention is not limited thereto, as modifications may be made by those skilled in the art without departing from the scope of the invention.
Claims (6)
1. A protection circuit, comprising: the device comprises a capacitor, a diode, a first insulated gate bipolar transistor, a second insulated gate bipolar transistor, a third insulated gate bipolar transistor and a circuit breaker; the circuit breaker comprises a control input end and two wiring terminals;
the collector electrode of the first insulated gate bipolar transistor is electrically connected with the cathode of the diode and one end of the capacitor respectively; the emitter of the first insulated gate bipolar transistor is electrically connected with the anode of the diode;
the collector of the second insulated gate bipolar transistor is electrically connected with the emitter of the first insulated gate bipolar transistor and the emitter of the third insulated gate bipolar transistor respectively; the emitter of the second insulated gate bipolar transistor is respectively and electrically connected with the collector of the third insulated gate bipolar transistor and the other end of the capacitor;
one wiring terminal of the circuit breaker is electrically connected with the emitter of the third insulated gate bipolar transistor; the other terminal of the circuit breaker is electrically connected with the collector electrode of the third insulated gate bipolar transistor;
the diode and the first insulated gate bipolar transistor form a first switch; the second insulated gate bipolar transistor and the third insulated gate bipolar transistor form a second switch; the circuit breaker forms a third switch;
two ends of the capacitor are used as input ports of a protection circuit, and two wiring terminals of the circuit breaker are used as output ports of the protection circuit;
the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker are all used for receiving high-low level signals sent by the controller to realize on-off processing;
the grid electrode of the second insulated gate bipolar transistor is electrically connected with the grid electrode of the third insulated gate bipolar transistor;
when the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker respectively receive high level, low level and low level, the first switch is turned on, and the second switch and the third switch are turned off;
when the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker respectively receive low level, low level and low level, the first switch, the second switch and the third switch are all turned off;
when the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker respectively receive low level, high level and low level, the first switch and the third switch are turned off, and the second switch is turned on; when the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker respectively receive low level, low level and high level, the first switch and the second switch are both turned off, and the third switch is turned on.
2. A protection system, comprising: the protection circuit of claim 1, a controller for providing a high and low level signal to the protection circuit, and a detector for detecting a fault type of the flexible direct current power transmission system; the detector is electrically connected with the controller; the controller is respectively and electrically connected with the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker in the protection circuit;
and the controller issues a corresponding control level signal to the protection circuit according to the existence of the fault detected by the detector and the fault type.
3. The protection system of claim 2, wherein the controller issues a high level, a low level, and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input of the circuit breaker, respectively, when the detector does not detect a fault.
4. The protection system of claim 2, wherein the controller issues a low level, and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input of the circuit breaker, respectively, when the detector detects a dc fault.
5. The protection system of claim 2, wherein the controller issues a low level, a high level, and a low level to the gate of the first insulated gate bipolar transistor, the gate of the second insulated gate bipolar transistor, the gate of the third insulated gate bipolar transistor, and the control input of the circuit breaker, respectively, when the detector detects a commutation subunit failure; after a preset period of time, the controller respectively sends low level, low level and high level to the grid electrode of the first insulated gate bipolar transistor, the grid electrode of the second insulated gate bipolar transistor, the grid electrode of the third insulated gate bipolar transistor and the control input end of the circuit breaker.
6. The protection system of claim 5, wherein the predetermined time period is 3-5ms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811460081.8A CN109327008B (en) | 2018-11-30 | 2018-11-30 | Protection circuit and protection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811460081.8A CN109327008B (en) | 2018-11-30 | 2018-11-30 | Protection circuit and protection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109327008A CN109327008A (en) | 2019-02-12 |
| CN109327008B true CN109327008B (en) | 2024-04-16 |
Family
ID=65256534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811460081.8A Active CN109327008B (en) | 2018-11-30 | 2018-11-30 | Protection circuit and protection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109327008B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000060439A (en) * | 1999-03-16 | 2000-10-16 | 차동해 | Device for driving high voltage igbt |
| CN103346763A (en) * | 2013-06-18 | 2013-10-09 | 山东大学（威海） | Insulated gate bipolar transistor drive protective circuit |
| KR20150071576A (en) * | 2013-12-18 | 2015-06-26 | 엘에스산전 주식회사 | circuit of checking IGBT Module failure through monitoring the gate voltage |
| CN105281555A (en) * | 2015-11-05 | 2016-01-27 | 特变电工新疆新能源股份有限公司 | Module topology and MMC type flexible direct current power transmission system based on same |
| CN209088516U (en) * | 2018-11-30 | 2019-07-09 | 中电普瑞电力工程有限公司 | Protect circuit and protection system |
-
2018
- 2018-11-30 CN CN201811460081.8A patent/CN109327008B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000060439A (en) * | 1999-03-16 | 2000-10-16 | 차동해 | Device for driving high voltage igbt |
| CN103346763A (en) * | 2013-06-18 | 2013-10-09 | 山东大学（威海） | Insulated gate bipolar transistor drive protective circuit |
| KR20150071576A (en) * | 2013-12-18 | 2015-06-26 | 엘에스산전 주식회사 | circuit of checking IGBT Module failure through monitoring the gate voltage |
| CN105281555A (en) * | 2015-11-05 | 2016-01-27 | 特变电工新疆新能源股份有限公司 | Module topology and MMC type flexible direct current power transmission system based on same |
| CN209088516U (en) * | 2018-11-30 | 2019-07-09 | 中电普瑞电力工程有限公司 | Protect circuit and protection system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109327008A (en) | 2019-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208522665U (en) | Converter apparatus | |
| US10164428B2 (en) | Voltage-source multi-level converter, DC power transmission system, and fault processing method and device | |
| EP3267460B1 (en) | Direct-current interruption device | |
| KR101453631B1 (en) | Converter for high voltages | |
| EP3041127A1 (en) | Submodule topology for modular multi-level converter and application thereof | |
| CN107112745B (en) | Direct current power network | |
| CN103986342B (en) | A kind of power electronics inverter that can remove bi-directional failure electric current and control method | |
| CN107765112B (en) | Converter valve overcurrent turn-off test circuit, method and device | |
| WO2015123922A1 (en) | Current converter module unit, current converter, direct-current transmission system and control method | |
| US20200259411A1 (en) | Power conversion device and communication method | |
| US20160006368A1 (en) | Power Converter | |
| CN110417290B (en) | Novel modular multilevel converter submodule topological circuit and control method thereof | |
| CN110890743B (en) | Low-loss modular multilevel DC transformer with fault blocking capability | |
| CN103887767A (en) | Device for protection against an electrical overcurrent of at least one electronic switching branch, conversion system comprising such a protection device, and related control method | |
| CN112039360A (en) | MMC submodule with fault current blocking and self-voltage-sharing capabilities | |
| CN108616223B (en) | IGCT-based modularized multi-level converter and fault processing method | |
| Nguyen et al. | A novel submodule topology of MMC for blocking DC-fault currents in HVDC transmission systems | |
| EP3772805B1 (en) | Method and system comprising inverter circuit and apparatus for controlling inverter circuit, and inverter | |
| CN111164876B (en) | Multistage converter | |
| CN109327008B (en) | Protection circuit and protection system | |
| CN105990827A (en) | High-voltage direct-current circuit breaker topology circuit and realization method | |
| CN110999064B (en) | Converter device with phase module discharger and method for short-circuit protection thereof | |
| CN209088516U (en) | Protect circuit and protection system | |
| CN104303405B (en) | For the gate drivers of power inverter | |
| CN208782505U (en) | Over-pressure safety device for wind power plant |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |