CN209070071U - IGBT burn in test circuit - Google Patents
IGBT burn in test circuit Download PDFInfo
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- CN209070071U CN209070071U CN201821687302.0U CN201821687302U CN209070071U CN 209070071 U CN209070071 U CN 209070071U CN 201821687302 U CN201821687302 U CN 201821687302U CN 209070071 U CN209070071 U CN 209070071U
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Abstract
The utility model relates to a kind of IGBT burn in test circuit, which includes: the first current source, the second current source, forward and reverse flow guiding unit, to-be-measured cell.First current source provides burn-in test electric current by forward and reverse flow guiding unit for the to-be-measured cell, forward and reverse flow guiding unit is for adjusting the direction that burn-in test electric current flows through to-be-measured cell, to simulate IGBT working condition by the burn-in test current direction for flowing through to-be-measured cell；Second current source provides junction temperature for to-be-measured cell and tests electric current, tests the saturation voltage under electric current to test to-be-measured cell in junction temperature, and carry out burn-in test to the IGBT by saturation voltage.The burn-in test to IGBT is completed by burn in test circuit, online evaluation and prediction are carried out to the service life of IGBT, the working condition of IGBT can be effectively monitored, the IGBT that will be damaged is replaced in advance, ensure the safe operation of track train.
Description
Technical field
The utility model relates to device for power switching testing fields, in particular to a kind of IGBT burn-in test electricity
Road.
Background technique
Important way of the Rail Transit System as large- and-medium size cities transit trip is big with its passenger capacity, do not handed over
The advantages of logical congestion influences increasingly is widely adopted.In the chief component of City Rail Transit System, rail traffic
Train is played a crucial role as apparatus of transport, and train traction current transformer is transported by control traction electric machine for train
Row provides tractive force or electric braking force, operational reliability, service life will have a direct impact on entire train.
According to statistics, the probability that device for power switching breaks down accounts for the probability that current transformer electric component breaks down
20% or more, and for the vehicle for running more than 150,000 kilometers, the probability that device for power switching breaks down is even higher than
30%.
In order to ensure the safe operation of train, need to carry out online evaluation to the service life of high-power device for power switching
And prediction, and the monitoring and life prediction of high-power switch device ageing state in traction convertor are not related in the industry at present
And.
Utility model content
To solve the above-mentioned problems, the utility model embodiment provides a kind of IGBT burn in test circuit.
The utility model embodiment provides a kind of insulated gate bipolar transistor IGBT burn in test circuit, the circuit packet
It includes: the first current source, the second current source, forward and reverse flow guiding unit, to-be-measured cell；
The to-be-measured cell includes that IGBT and freewheeling diode FWD, the FWD are connected to the IGBT collector and transmitting
Between pole；
First current source provides burn-in test electric current, institute by forward and reverse flow guiding unit for the to-be-measured cell
Forward and reverse flow guiding unit is stated for adjusting the direction that burn-in test electric current flows through the to-be-measured cell, with described to be measured by flowing through
The burn-in test current direction of unit simulates the IGBT working condition；
Second current source is in parallel with the to-be-measured cell, provides junction temperature for the to-be-measured cell and tests electric current, to survey
It tries the to-be-measured cell and tests the saturation voltage under electric current in junction temperature, and aging is carried out to the IGBT by the saturation voltage
Test.
Optionally, in the present embodiment, forward and reverse flow guiding unit includes the first GTO, the 2nd GTO, the 3rd GTO and the
Four GTO；
The anode of first GTO and the 2nd GTO is connect with the anode of first current source, the first GTO
Cathode is connect with the collector of the IGBT, and the 2nd GTO cathode is connect with the emitter of the IGBT；
The cathode of 3rd GTO and the 4th GTO is connect with the cathode of first current source, the 3rd GTO anode
It is connect with the collector of the IGBT, the anode of the 4th GTO is connect with the emitter of the IGBT.
Optionally, in the present embodiment, the circuit further includes the 5th GTO；
The anode of 5th GTO is connect with the positive of first current source, the cathode of the 5th GTO with it is described
The cathode of first current source connects, and branch where the 5th GTO is the afterflow channel of the burn-in test electric current.
Optionally, in the present embodiment, the circuit further includes freewheeling diode, the freewheeling diode and described first
Current source is connected in parallel, for the burn in test circuit afterflow.
Optionally, in the present embodiment, the freewheeling diode is Schottky diode SBD.
Optionally, in the present embodiment, the freewheeling diode is fast recovery diode FRD.
Optionally, in the present embodiment, the circuit further includes inductance, inductance setting first current source with
Between forward and reverse flow guiding unit, for carrying out current stabilization to the burn-in test electric current.
Optionally, in the present embodiment, the circuit further includes voltmeter；
The voltmeter is connected in parallel with the to-be-measured cell, for testing the to-be-measured cell in the case where junction temperature tests electric current
Saturation voltage.
Optionally, in the present embodiment, the circuit further includes absorptive unit；
The absorptive unit is in parallel with the to-be-measured cell, for absorbing the peak voltage of IGBT in the to-be-measured cell.
Optionally, in the present embodiment, the absorptive unit includes resistance and capacitor, and the resistance and capacitor are connected in series
It is connected in parallel afterwards with the to-be-measured cell.
Compared with the existing technology, the utility model embodiment has the advantages that
The utility model relates to a kind of IGBT burn in test circuit, the circuit includes: the first current source, the second electric current
Source, forward and reverse flow guiding unit, to-be-measured cell.First current source is the to-be-measured cell by forward and reverse flow guiding unit
Burn-in test electric current is provided, forward and reverse flow guiding unit is for adjusting the side that burn-in test electric current flows through the to-be-measured cell
To simulate the IGBT working condition by the burn-in test current direction for flowing through the to-be-measured cell；Second electric current
Source provides junction temperature for the to-be-measured cell and tests electric current, electric to test the saturation that the to-be-measured cell is tested under electric current in junction temperature
Pressure, and burn-in test is carried out to the IGBT by the saturation voltage.The aging to IGBT is completed by burn in test circuit
Test carries out online evaluation and prediction to the service life of IGBT, the working condition of IGBT can be effectively monitored, in advance to i.e.
The IGBT of damage is replaced, ensures the safe operation of track train.
Detailed description of the invention
It, below will be to use required in embodiment in order to illustrate more clearly of the technical solution of the utility model embodiment
Attached drawing be briefly described, it should be understood that the following drawings illustrates only some embodiments of the utility model, therefore should not be by
Regard the restriction to range as, for those of ordinary skill in the art, without creative efforts, may be used also
To obtain other relevant attached drawings according to these attached drawings.
Fig. 1 is one of the circuit diagram of IGBT burn in test circuit provided by the embodiment of the utility model；
Fig. 2 is the two of the circuit diagram of IGBT burn in test circuit provided by the embodiment of the utility model；
Fig. 3 is the three of the circuit diagram of IGBT burn in test circuit provided by the embodiment of the utility model；
Fig. 4 is the flow chart of IGBT ageing testing method provided by the embodiment of the utility model.
Main icon: 1-IGBT burn in test circuit；The first current source of 10-；The second current source of 20-；The forward and reverse water conservancy diversion of 30-
Unit；40- to-be-measured cell；50- inductance；60- absorptive unit；The first GTO of 301-；The 2nd GTO of 302-；The 3rd GTO of 303-；
The 4th GTO of 304-；The 5th GTO of 305-；401-IGBT；402-FWD.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Usually here in attached drawing description and
The component of the utility model embodiment shown can be arranged and be designed with a variety of different configurations.
Therefore, requirement is not intended to limit to the detailed description of the embodiments of the present invention provided in the accompanying drawings below
The scope of the utility model of protection, but it is merely representative of the selected embodiment of the utility model.Based in the utility model
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts, all
Belong to the range of the utility model protection.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " first ", " second " " third " etc. are only used for distinguishing
Description, is not understood to indicate or imply relative importance.
The orientation or positional relationship of the instructions such as term " on ", "lower", "left", "right", "inner", "outside" is based on shown in attached drawing
Orientation or positional relationship or the utility model product using when the orientation or positional relationship usually put, merely to
Convenient for describing the utility model and simplifying description, rather than the device or element of indication or suggestion meaning must have specific side
Position is constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
In addition, the terms such as " vertical " are not offered as requiring absolute upright between component, but can be slightly tilted.As " hung down
Directly " only refer to that its direction is in contrast more vertical, be not indicate the structure have to it is completely vertical, but can be slightly
Inclination.
In the description of the present invention, it should also be noted that, unless otherwise clearly defined and limited, term " is set
Set ", " installation ", " connected ", " connection " etc. shall be understood in a broad sense.For example, it may be being fixedly connected, it is also possible to detachably connect
It connects, or is integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, intermediate matchmaker can also be passed through
Jie is indirectly connected, and can be the connection inside two elements.It for the ordinary skill in the art, can be with concrete condition
Understand the concrete meaning of above-mentioned term in the present invention.
Fig. 1 is please referred to, Fig. 1 is a kind of circuit diagram of IGBT burn in test circuit provided by the embodiment of the utility model, institute
Stating circuit 1 includes: the first current source 10, the second current source 20, forward and reverse flow guiding unit 30, to-be-measured cell 40.
The to-be-measured cell 40 includes insulated gate bipolar transistor IGBT (Insulated Gate Bipolar
Transistor, abbreviation IGBT) 401 and freewheeling diode FWD (Freewheeling diode, abbreviation FWD) 402, it is described
FWD402 is connected between the IGBT401 collector and emitter；Electric current flow through the FWD402 can speed up it is described
The aging of IGBT401.
First current source 10 is that the to-be-measured cell 40 provides burn-in test by forward and reverse flow guiding unit 30
Electric current, forward and reverse flow guiding unit 30 is for adjusting the direction that burn-in test electric current flows through the to-be-measured cell 40, to pass through
The burn-in test current direction for flowing through the to-be-measured cell 40 simulates the IGBT401 working condition；
Second current source 20 is in parallel with the to-be-measured cell 40, provides junction temperature test electricity for the to-be-measured cell 40
Stream tests the saturation voltage under electric current to test the to-be-measured cell 40 in junction temperature, and by the saturation voltage to described
IGBT401 carries out burn-in test.
Referring to figure 2., in the present embodiment, forward and reverse flow guiding unit 30 includes the first GTO (Gate Turn-Off
Thyristor, turn-off thyristor) 301, the 2nd GTO302, the 3rd GTO303 and the 4th GTO304；
The anode of first GTO301 and the 2nd GTO302 is connect with the positive of first current source, and described the
One GTO301 cathode is connect with the collector of the IGBT401, the emitter of the 2nd the GTO302 cathode and the IGBT401
Connection；
The cathode of 3rd GTO303 and the 4th GTO304 is connect with the cathode of first current source, the third
GTO303 anode is connect with the collector of the IGBT401, the emitter of the anode and the IGBT401 of the 4th GTO304
Connection.
By changing the turned on or off of multiple GTO, can change when burn-in test electric current flows through to-be-measured cell
Current direction, the forward direction burn-in test electric current refer to that the electric current of first current source is flowed into from the collector of IGBT401, and
It is flowed out from the emitter of IGBT401, burn-in test electric current does not flow through the FWD402 at this time.Control the first GTO301 and
Four GTO304 conducting, the 2nd GTO302 and the 3rd GTO303 are closed, and can make the burn-in test electric current forward direction circulation list to be measured
Member 40.
The reversed burn-in test electric current refer to the electric current of first current source from the emitter of IGBT401 and
The anode of FWD402 flows into, and flows out from the cathode of the collector of IGBT401 and FWD402, and FWD402 is connected at this time, and aging is surveyed
Examination electric current can flow through the FWD402.It controls the first GTO301 and the 4th GTO304 to close, the 2nd GTO302 and third
GTO303 conducting can make burn-in test electric current circulate in the to-be-measured cell 40.
Referring to figure 3., in the present embodiment, the circuit further includes the 5th GTO305.The anode of 5th GTO305
It is connect with the anode of first current source 10, the cathode of the 5th GTO305 and the cathode of first current source 10 connect
It connects, branch is the afterflow channel of the burn-in test electric current where the 5th GTO305, prevents the electric current for flowing through element unexpected
Become 0, to have the function that protection element.
Please continue to refer to Fig. 3, in the present embodiment, the circuit 1 further includes inductance 50, and the inductance 50 is arranged described
Between first current source 10 and forward and reverse flow guiding unit 30, for carrying out current stabilization to the burn-in test electric current.
In the present embodiment, the circuit further includes voltmeter V.The voltmeter V is connected in parallel on 40 liang of the to-be-measured cell
The saturation voltage under electric current is tested in junction temperature for testing the to-be-measured cell 40 in end.The service life of the to-be-measured cell 40
It can be obtained indirectly by the saturation voltage that junction temperature is tested under electric current.
In the present embodiment, the circuit 1 further includes absorptive unit 60.The absorptive unit 60 and the to-be-measured cell
40 is in parallel, for absorbing the peak voltage of IGBT401 in the to-be-measured cell.Peak voltage belongs to one kind in surge voltage,
Duration is extremely short but numerical value is very high.Motor, capacitor and power converter (such as speed change driver) are to generate peak voltage
Principal element, have great destructive power to circuit.
In the present embodiment, the absorptive unit 60 includes that resistance R and capacitor C, the resistance R and capacitor C are connected in series
It is connected in parallel afterwards with the to-be-measured cell 40.
Referring to figure 4., the utility model embodiment additionally provides a kind of IGBT ageing testing method, in the method, institute
Stating to-be-measured cell is multiple sampling products in a batch of product of system, which comprises
Step S110, service life of the test to-be-measured cell under the test of forward and reverse aging current.
In the present embodiment, step S110 can be realized in the following ways: control the first GTO301 and described the
Four GTO304 conducting, the 2nd GTO302 and the 3rd GTO303 are closed, and are controlled first current source 10 and generated one
A burn-in test electric current I1, the burn-in test electric current I at this time1Forward direction flows through the IGBT401；Described first is controlled again
GTO301 and the 4th GTO304 is closed, and the 2nd GTO302 and the 3rd GTO303 conducting, the aging is surveyed at this time
Try electric current I1The IGBT401 and the FWD402 are reversely flowed through, is known as having carried out once just the to-be-measured cell 40 at this time
Reversed aging current test.Forward and reverse aging current test of stipulated number is carried out until described to be measured to the to-be-measured cell 40
The service life of the to-be-measured cell 40 can be obtained in unit 40 after failing.Wherein, it is specified that the service life is make it is described to
Survey the median for the testing time that unit 40 fails.
Wherein, the to-be-measured cell 40 fails the saturation voltage for referring to the IGBT401 after being tested than initial saturation electricity
Pressure is increased beyond a certain threshold value, that is, assert that the to-be-measured cell 40 fails, and the to-be-measured cell 40 test to failure is carried out
The median of testing time is the service life of the to-be-measured cell 40.
Step S120, service life of the test to-be-measured cell under the test of positive aging current.
In the present embodiment, step S110 can be realized in the following ways: control the 2nd GTO302 and described the
Three GTO303 are constantly in closed state, the first GTO301 and the 4th GTO304 conducting, control first electric current
Source 10 generates burn-in test electric current I1, the burn-in test electric current forward direction flows through the to-be-measured cell 40 at this time, then by described
One GTO301 and the 4th GTO304 are closed, and flow through the to-be-measured cell 40 without electric current at this time, be known as at this time to it is described to
It surveys unit 40 and has carried out primary positive aging current test.The positive aging current of stipulated number is carried out to the to-be-measured cell 40
Test until can obtain the service life of the to-be-measured cell 40 indirectly after the to-be-measured cell 40 failure.
Step S130, according to service life of the to-be-measured cell under forward and reverse burn-in test electric current and to-be-measured cell in forward direction
Service life under burn-in test electric current obtains the corresponding relationship between equivalent burn-in electric current and burn-in test electric current.
In the present embodiment, step S110 can be realized in the following ways: the to-be-measured cell 40 is in forward and reverse aging
Test electric current I1Under test data under positive burn-in test electric current of test data and to-be-measured cell be all satisfied Weibull distribution
Law, it is available described to be measured according to test data of the to-be-measured cell 40 under forward and reverse burn-in test electric current
The crash rate of unit 40 and the relational expression of switch testing numberWherein, the F1(x) for it is described to
Survey crash rate of the unit 40 under forward and reverse burn-in test electric current, a1、 n1It for constant, can be calculated by test data, x table
Show switch testing number.
It is available described to be measured according to test data of the to-be-measured cell 40 under the positive burn-in test electric current
The crash rate of unit 40 and the relational expression of switch testing numberWherein F2It (x) is the to-be-measured cell
40 crash rate under positive burn-in test electric current, a2、n2For constant, can be calculated by test data.
Since the FWD402 plays the role of accelerated ageing to the to-be-measured cell 40, it therefore follows that equivalent burn-in electric current
I2 eq=I2 G+a2I2 D, wherein the equivalent burn-in electric current IeqRefer to the equivalent burn-in electric current of the to-be-measured cell 40, the IGWith
IDRespectively flow through the electric current of the IGBT401 and FWD402, the IGWith IDValue and the size phase of the burn-in test electric current
Together.Therefore, I can be calculated from the formulaeq=qIG, wherein it can be combined and be derived from by above-mentioned formula
Wherein, γ is gamma function, a1、 a2、n1、n2For the constant in above-mentioned formula, can be calculated according to the Weibull distribution of test data
It obtains, I can be calculated after calculating q value as a result,eqValue, I can be obtainedeqWith the corresponding relationship of burn-in test electric current.
Step S140, the forward and reverse aging current for carrying out different size of current to to-be-measured cell is tested, until described to be measured
Element failure obtains service life of the to-be-measured cell under forward and reverse aging current test of different size of current, and obtains
The service life of to-be-measured cell under to different burn-in test electric currents.
In the present embodiment, step S110 can be realized in the following ways: the size of burn-in test electric current being arranged first
For 0.8 times of I1, forward and reverse aging current test then is carried out to to-be-measured cell 40, after the completion of test, obtains 0.8 times of I1Current bar
Senile experiment result curve under part, fitting obtain 0.8 times of I1Under the conditions of to-be-measured cell 40 crash rateWherein a3、n3For the distribution parameter of senile experiment result curve, can be calculated by test data
It arrives.
Similarly, 0.6 times of I is carried out1Under the conditions of the test of forward and reverse aging current, and obtain experimental result curve, be fitted
0.6 times of I out1Under the conditions of to-be-measured cell 40 crash rateWherein, a4、n3For senile experiment result
The distribution parameter of curve can be calculated by test data.
According to F1(x)、F3(x)、F4(x) formula can obtainWherein, NfFor to-be-measured cell
40 service life, it is specified that service life is the median of the switch testing number to the test of to-be-measured cell 40 to after failing, b,
C, d is constant, is calculated according to experimental result curve using least square method.
According to above-mentioned formula, the service life N of the to-be-measured cell 40 can be obtainedfWith IeqCorresponding relationship, and it is above-mentioned
I has been obtained in stepeqWith the corresponding relationship between burn-in test electric current, therefore, it is very easy to obtain service life NfWith aging
The corresponding relationship between electric current is tested, the service life that different test electric currents will lead to device is different, according to above-mentioned corresponding pass
System, can estimate out service life of the device under different electric currents, make estimation results with more persuasion property.
It is worth noting that the 0.8 times of I mentioned in foregoing description1With 0.6 times of I1It is for example, in the present embodiment
In other embodiments, the electric current that other multiple proportions can be used is tested as burn-in test electric current, to complete to using
Service life is estimated.
In the other embodiments of the present embodiment, the service life N is being calculatedfWith IeqCorresponding relationship when, may be used also
Considering influence of the temperature to experimental result, is based on Arrhenius empirical coefficient, i.e. 10 degrees Celsius of service lifes of every increase halve,
Then haveWherein, T is environment temperature when carrying out test experiments, and k is Temperature affection factor, when by testing
Environment temperature bring into formula, can acquireTherefore consider influence of the temperature to experimental result
Afterwards, the service life NfWith IeqCorresponding relationship formula can be expressed asWherein T
To carry out environment temperature when burn-in test experiment in above-mentioned steps, t is environment temperature locating for to-be-measured cell 40.
In conclusion the circuit includes: the first electricity the utility model relates to a kind of IGBT burn in test circuit and method
Stream source, the second current source, forward and reverse flow guiding unit, to-be-measured cell.First current source passes through forward and reverse flow guiding unit
There is provided burn-in test electric current for the to-be-measured cell, forward and reverse flow guiding unit for adjust burn-in test electric current flow through it is described
The direction of to-be-measured cell, to simulate the IGBT working condition by the burn-in test current direction for flowing through the to-be-measured cell；
Second current source provides junction temperature for the to-be-measured cell and tests electric current, tests electric current to test the to-be-measured cell in junction temperature
Under saturation voltage, and by the saturation voltage to the IGBT carry out burn-in test.Pass through burn in test circuit completion pair
The burn-in test of IGBT carries out online evaluation and prediction to the service life of IGBT, can effectively monitor the work shape of IGBT
State in advance replaces the IGBT that will be damaged, and ensures the safe operation of track train.Meanwhile according to many experiments knot
Fruit, the corresponding relationship of environment temperature when fitting the service life of device and testing electric current and test, can be to various uses
In the case of device for power switching carry out service life estimate.
The above descriptions are merely preferred embodiments of the present invention, is not intended to limit the utility model, for this
For the technical staff in field, various modifications and changes may be made to the present invention.It is all in the spirit and principles of the utility model
Within, any modification, equivalent replacement, improvement and so on should be included within the scope of protection of this utility model.
Claims (10)
1. a kind of insulated gate bipolar transistor IGBT burn in test circuit characterized by comprising the first current source, second
Current source, forward and reverse flow guiding unit, to-be-measured cell；
The to-be-measured cell includes IGBT and freewheeling diode FWD, the FWD be connected to the IGBT collector and emitter it
Between；
First current source provides burn-in test electric current by forward and reverse flow guiding unit for the to-be-measured cell, it is described just
Reversed flow guiding unit is for adjusting the direction that burn-in test electric current flows through the to-be-measured cell, by flowing through the to-be-measured cell
Burn-in test current direction simulate the IGBT working condition；
Second current source is in parallel with the to-be-measured cell, provides junction temperature for the to-be-measured cell and tests electric current, to test
It states to-be-measured cell and tests the saturation voltage under electric current in junction temperature, and aging survey is carried out to the IGBT by the saturation voltage
Examination.
2. burn in test circuit according to claim 1, which is characterized in that forward and reverse flow guiding unit includes first
GTO, the 2nd GTO, the 3rd GTO and the 4th GTO；
The anode of first GTO and the 2nd GTO is connect with the anode of first current source, the first GTO cathode
It is connect with the collector of the IGBT, the 2nd GTO cathode is connect with the emitter of the IGBT；
The cathode of 3rd GTO and the 4th GTO is connect with the cathode of first current source, the 3rd GTO anode and institute
The collector connection of IGBT is stated, the anode of the 4th GTO is connect with the emitter of the IGBT.
3. burn in test circuit according to claim 2, which is characterized in that the circuit further includes the 5th GTO；
The anode of 5th GTO is connect with the anode of first current source, the cathode of the 5th GTO and first electricity
The cathode in stream source connects, and branch where the 5th GTO is the afterflow channel of the burn-in test electric current.
4. burn in test circuit according to claim 2, which is characterized in that the circuit further includes freewheeling diode, institute
It states freewheeling diode to be connected in parallel with first current source, for the burn in test circuit afterflow.
5. burn in test circuit according to claim 4, which is characterized in that the freewheeling diode is Schottky diode
SBD。
6. burn in test circuit according to claim 4, which is characterized in that the freewheeling diode is fast recovery diode
FRD。
7. burn in test circuit according to claim 3 or 4, which is characterized in that the circuit further includes inductance, the electricity
Sense is arranged between first current source and forward and reverse flow guiding unit, steady for carrying out to the burn-in test electric current
Stream.
8. burn in test circuit according to claim 7, which is characterized in that the circuit further includes voltmeter；
The voltmeter is connected in parallel with the to-be-measured cell, tests satisfying under electric current in junction temperature for testing the to-be-measured cell
And voltage.
9. burn in test circuit according to claim 8, which is characterized in that the circuit further includes absorptive unit；
The absorptive unit is in parallel with the to-be-measured cell, for absorbing the peak voltage of IGBT in the to-be-measured cell.
10. burn in test circuit according to claim 9, which is characterized in that the absorptive unit includes resistance and capacitor,
The resistance and capacitor are connected in parallel after being connected in series with the to-be-measured cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821687302.0U CN209070071U (en) | 2018-10-17 | 2018-10-17 | IGBT burn in test circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821687302.0U CN209070071U (en) | 2018-10-17 | 2018-10-17 | IGBT burn in test circuit |
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| CN209070071U true CN209070071U (en) | 2019-07-05 |
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| CN201821687302.0U Withdrawn - After Issue CN209070071U (en) | 2018-10-17 | 2018-10-17 | IGBT burn in test circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919085A (en) * | 2018-10-17 | 2018-11-30 | 北京交通大学 | IGBT burn in test circuit and method |
| CN110927552A (en) * | 2019-12-12 | 2020-03-27 | 中车大连电力牵引研发中心有限公司 | On-line monitoring VCE_ONFailure prediction method and device for IGBT power module of auxiliary inverter |
| CN117092477A (en) * | 2023-08-23 | 2023-11-21 | 杭州高裕电子科技股份有限公司 | High-temperature reverse bias aging test method for three-level power module |
-
2018
- 2018-10-17 CN CN201821687302.0U patent/CN209070071U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919085A (en) * | 2018-10-17 | 2018-11-30 | 北京交通大学 | IGBT burn in test circuit and method |
| CN108919085B (en) * | 2018-10-17 | 2024-05-31 | 北京交通大学 | IGBT aging test circuit and method |
| CN110927552A (en) * | 2019-12-12 | 2020-03-27 | 中车大连电力牵引研发中心有限公司 | On-line monitoring VCE_ONFailure prediction method and device for IGBT power module of auxiliary inverter |
| CN117092477A (en) * | 2023-08-23 | 2023-11-21 | 杭州高裕电子科技股份有限公司 | High-temperature reverse bias aging test method for three-level power module |
| CN117092477B (en) * | 2023-08-23 | 2024-03-08 | 杭州高裕电子科技股份有限公司 | High-temperature reverse bias aging test method for three-level power module |
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