CN108919085B - IGBT aging test circuit and method - Google Patents
IGBT aging test circuit and method Download PDFInfo
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Abstract
The application relates to an IGBT aging test circuit and method, the circuit includes: the device comprises a first current source, a second current source, a forward and reverse diversion unit and a unit to be tested. The first current source provides an aging test current for the unit to be tested through a forward and reverse diversion unit, and the forward and reverse diversion unit is used for adjusting the direction of the aging test current flowing through the unit to be tested so as to simulate the working state of the IGBT through the aging test current flowing through the unit to be tested; the second current source provides junction temperature test current for the unit to be tested so as to test the saturation voltage of the unit to be tested under the junction temperature test current, and the IGBT is subjected to aging test through the saturation voltage. The aging test circuit is used for completing the aging test of the IGBT, carrying out online evaluation and prediction on the service life of the IGBT, effectively monitoring the working state of the IGBT, replacing the IGBT to be damaged in advance and guaranteeing the safe operation of the rail train.
Description
Technical Field
The application relates to the field of power switch device testing, in particular to an IGBT aging test circuit and method.
Background
The rail transit system is used as an important mode of large and medium-sized urban public transportation travel, and is increasingly widely adopted due to the advantages of large passenger capacity and no influence of traffic jam. In the main components of the urban rail transit system, the rail transit train plays a vital role as a carrying tool, and the train traction converter provides traction force or electric braking force for train operation by controlling a traction motor, so that the operation reliability and the service life of the train can directly influence the whole train.
It is counted that the probability of failure of the power switching device is more than 20% of the probability of failure of the electrical components of the current transformer, whereas for vehicles running over 15 kilometers the probability of failure of the power switching device is even higher than 30%.
In order to ensure the safe operation of the train, the service life of the high-power switch device needs to be evaluated and predicted on line, but the monitoring and the service life prediction of the aging state of the high-power switch device in the traction converter in the industry are not related at present.
Disclosure of Invention
In order to solve the above problems, the embodiment of the application provides an IGBT aging test circuit and method.
In a first aspect, an embodiment of the present application provides an IGBT burn-in circuit, the circuit including: the device comprises a first current source, a second current source, a forward and reverse diversion unit and a unit to be tested;
The unit to be tested comprises an IGBT and a freewheeling diode FWD, and the FWD is connected between a collector and an emitter of the IGBT;
The first current source provides an aging test current for the unit to be tested through the forward and reverse diversion units, and the forward and reverse diversion units are used for adjusting the direction of the aging test current flowing through the unit to be tested so as to simulate the working state of the IGBT through the aging test current flowing through the unit to be tested;
The second current source is connected in parallel with the unit to be tested, provides junction temperature test current for the unit to be tested, tests saturated voltage of the unit to be tested under the junction temperature test current, and performs aging test on the IGBT through the saturated voltage.
Optionally, in this embodiment, the forward and reverse diversion unit includes a first turn-off thyristor GTO, a second GTO, a third GTO, and a fourth GTO;
The anodes of the first GTO and the second GTO are connected with the anode of the first current source, the cathode of the first GTO is connected with the collector of the IGBT, and the cathode of the second GTO is connected with the emitter of the IGBT;
and the cathodes of the third GTO and the fourth GTO are connected with the cathode of the first current source, the anode of the third GTO is connected with the collector of the IGBT, and the anode of the fourth GTO is connected with the emitter of the IGBT.
Optionally, in this embodiment, the circuit further includes a fifth GTO;
The positive pole of the fifth GTO is connected with the positive pole of the first current source, the negative pole of the fifth GTO is connected with the negative pole of the first current source, and the branch circuit where the fifth GTO is located is a follow current channel of the aging test current.
Optionally, in this embodiment, the circuit further includes an inductor, where the inductor is disposed between the first current source and the forward and reverse diversion unit, and is configured to stabilize the burn-in test current.
Optionally, in this embodiment, the circuit further includes a voltmeter;
The voltmeter is connected with the unit to be tested in parallel and is used for testing the saturation voltage of the unit to be tested under the junction temperature test current.
Optionally, in this embodiment, the circuit further includes an absorption unit;
and the absorption unit is connected with the unit to be detected in parallel and is used for absorbing the peak voltage of the IGBT in the unit to be detected.
Optionally, in this embodiment, the absorption unit includes a resistor and a capacitor, where the resistor and the capacitor are connected in series and then connected in parallel with the unit under test.
In a second aspect, an embodiment of the present application further provides an IGBT burn-in test method, including: testing the service life of a unit to be tested under forward and reverse aging current test;
Testing the service life of the unit to be tested under the forward aging current test;
Obtaining a corresponding relation between equivalent aging current and aging test current according to the service life of the unit to be tested under forward and reverse aging test current and the service life of the unit to be tested under forward aging test current;
And carrying out forward and reverse aging current tests on the unit to be tested with different current magnitudes until the unit to be tested fails, so as to obtain the service lives of the unit to be tested under the forward and reverse aging current tests with different current magnitudes, and obtain the service lives of the unit to be tested under different aging test currents.
Optionally, in this embodiment, the testing the service life of the unit under test under the forward and reverse aging current test includes:
measuring the initial saturation voltage of the unit to be measured under the junction temperature test current;
after forward and reverse aging current testing is carried out on the unit to be tested for a specified number of times, measuring the saturation voltage of the unit to be tested under junction temperature testing current;
comparing the tested saturated voltage with the initial saturated voltage, and judging that the unit to be tested fails to obtain the service life if the saturated voltage exceeds the initial saturated voltage by a preset voltage threshold;
and if the saturated voltage does not exceed the initial saturated voltage preset voltage threshold, continuing to perform forward and reverse current test on the first unit to be tested, and updating the saturated voltage until the updated saturated voltage exceeds the initial saturated voltage preset voltage threshold, so that the service life is obtained.
Optionally, in this embodiment, the testing the service life of the unit under test under the forward aging current test includes:
measuring the initial saturation voltage of the unit to be measured under the junction temperature test current;
After forward aging current testing is carried out on the unit to be tested for a specified number of times, measuring the saturation voltage of the unit to be tested under junction temperature testing current;
comparing the tested saturated voltage with the initial saturated voltage, and judging that the unit to be tested fails to obtain the service life if the saturated voltage exceeds the initial saturated voltage by a preset voltage threshold;
and if the saturated voltage does not exceed the initial saturated voltage preset voltage threshold, continuing to perform forward current test on the first unit to be tested, and updating the saturated voltage until the updated saturated voltage exceeds the initial saturated voltage preset voltage threshold, so as to obtain the service life.
Compared with the prior art, the embodiment of the application has the following beneficial effects:
The application relates to an IGBT aging test circuit and method, wherein the circuit comprises: the device comprises a first current source, a second current source, a forward and reverse diversion unit and a unit to be tested. The first current source provides an aging test current for the unit to be tested through the forward and reverse diversion units, and the forward and reverse diversion units are used for adjusting the direction of the aging test current flowing through the unit to be tested so as to simulate the working state of the IGBT through the aging test current flowing through the unit to be tested; and the second current source provides junction temperature test current for the unit to be tested so as to test the saturated voltage of the unit to be tested under the junction temperature test current, and the IGBT is subjected to aging test through the saturated voltage. The aging test circuit is used for completing the aging test of the IGBT, carrying out online evaluation and prediction on the service life of the IGBT, effectively monitoring the working state of the IGBT, replacing the IGBT to be damaged in advance and guaranteeing the safe operation of the rail train.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is one of circuit diagrams of an IGBT burn-in circuit provided by an embodiment of the present application;
FIG. 2 is a second circuit diagram of an IGBT burn-in circuit according to an embodiment of the present application;
FIG. 3 is a third circuit diagram of an IGBT burn-in circuit according to an embodiment of the present application;
Fig. 4 is a flowchart of an IGBT burn-in test method according to an embodiment of the present application.
Major icons: 1-IGBT aging test circuit; 10-a first current source; 20-a second current source; 30-a forward and reverse diversion unit; 40-a unit to be tested; 50-inductance; a 60-absorption unit; 301-a first GTO; 302-a second GTO; 303-third GTO; 304-fourth GTO; 305-fifth GTO;401-IGBT;402-FWD.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.
The terms "upper," "lower," "left," "right," "inner," "outer," and the like refer to an orientation or positional relationship based on that shown in the drawings, or that is conventionally put in place when the inventive product is used, merely to facilitate description of the application and simplify description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the application.
Furthermore, the terms "vertical" and the like do not denote absolute perpendicularity between the required components, but may be slightly inclined. As "vertical" simply means that its direction is relatively more vertical, and does not mean that the structure must be perfectly vertical, but may be slightly tilted.
In the description of the present application, it should also be noted that the terms "disposed," "mounted," "connected," and the like are to be construed broadly, unless otherwise specifically defined and limited. For example, the connection can be fixed connection, detachable connection or integrated connection; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1, fig. 1 is a circuit diagram of an IGBT burn-in test circuit according to an embodiment of the present application, where the circuit 1 includes: the device comprises a first current source 10, a second current source 20, a forward and reverse diversion unit 30 and a unit to be tested 40.
The unit under test 40 includes an insulated gate bipolar transistor IGBT (Insulated GateBipolar Transistor, abbreviated as IGBT) 401 and a freewheeling diode FWD (Freewheelingdiode, abbreviated as FWD) 402, and the FWD402 is connected between the collector and the emitter of the IGBT 401; the flow of current through the FWD402 can accelerate the aging of the IGBT 401.
The first current source 10 provides an aging test current for the unit under test 40 through the forward and reverse current guiding units 30, and the forward and reverse current guiding units 30 are used for adjusting the direction of the aging test current flowing through the unit under test 40 so as to simulate the working state of the IGBT401 through the aging test current flowing through the unit under test 40;
The second current source 20 is connected in parallel with the unit under test 40, and provides a junction temperature test current for the unit under test 40 to test the saturation voltage of the unit under test 40 under the junction temperature test current, and performs an aging test on the IGBT401 through the saturation voltage.
Referring to fig. 2, in the present embodiment, the forward and reverse diversion unit 30 includes a first turn-off thyristor GTO301, a second GTO302, a third GTO303, and a fourth GTO304;
The anodes of the first GTO301 and the second GTO302 are connected with the anode of the first current source, the cathode of the first GTO301 is connected with the collector of the IGBT401, and the cathode of the second GTO302 is connected with the emitter of the IGBT 401;
The cathodes of the third GTO303 and the fourth GTO304 are connected to the cathode of the first current source, the anode of the third GTO303 is connected to the collector of the IGBT401, and the anode of the fourth GTO304 is connected to the emitter of the IGBT 401.
By changing the on or off states of the GTOs, the current direction when the burn-in test current flows through the unit under test can be changed, where the forward burn-in test current refers to the current of the first current source flowing in from the collector of the IGBT401 and flowing out from the emitter of the IGBT401, and the burn-in test current does not flow through the FWD402. And controlling the first GTO301 and the fourth GTO304 to be conducted, and closing the second GTO302 and the third GTO303 to enable the aging test current to flow in the forward direction through the unit 40 to be tested.
The reverse aging test current means that the current of the first current source flows in from the emitter of the IGBT401 and the positive electrode of the FWD402, and flows out from the collector of the IGBT401 and the negative electrode of the FWD402, at this time the FWD402 is turned on, and the aging test current may flow through the FWD402. And the first GTO301 and the fourth GTO304 are controlled to be closed, and the second GTO302 and the third GTO303 are turned on to enable the burn-in test current to flow in the unit under test 40.
Referring to fig. 3, in this embodiment, the circuit further includes a fifth GTO305. The positive pole of the fifth GTO305 is connected to the positive pole of the first current source 10, the negative pole of the fifth GTO305 is connected to the negative pole of the first current source 10, and the branch where the fifth GTO305 is located is the freewheel channel of the aging test current, so as to prevent the current flowing through the element from suddenly changing to 0, thereby achieving the function of protecting the element.
With continued reference to fig. 3, in this embodiment, the circuit 1 further includes an inductor 50, and the inductor 50 is disposed between the first current source 10 and the forward/reverse current guiding unit 30, for stabilizing the aging test current.
In this embodiment, the circuit further comprises a voltmeter V. The voltmeter V is connected in parallel to two ends of the unit under test 40, and is used for testing the saturation voltage of the unit under test 40 under the junction temperature test current. The service life of the unit under test 40 can be indirectly obtained by the saturation voltage under the junction temperature test current.
In this embodiment, the circuit 1 further comprises an absorption unit 60. The absorption unit 60 is connected in parallel with the unit under test 40, and is used for absorbing the peak voltage of the IGBT401 in the unit under test. The spike voltage is one of surge voltages, and has extremely short duration but high value. Motors, capacitors, and power conversion devices (e.g., variable speed drives) are the primary factors that produce spike voltages and are extremely damaging to the circuit.
In this embodiment, the absorption unit 60 includes a resistor R and a capacitor C, which are connected in series and then connected in parallel with the unit under test 40.
Referring to fig. 4, the embodiment of the application further provides an IGBT burn-in test method, in which the unit to be tested is a plurality of sampling products in a unified batch of products, the method includes:
Step S110, the service life of the unit to be tested under the forward and reverse aging current test is tested.
In this embodiment, step S110 may be implemented in the following manner: controlling the first GTO301 and the fourth GTO304 to be turned on, the second GTO302 and the third GTO303 to be turned off, and controlling the first current source 10 to generate a burn-in current I 1, where the burn-in current I 1 flows through the IGBT401 in a forward direction; and then the first GTO301 and the fourth GTO304 are controlled to be closed, the second GTO302 and the third GTO303 are turned on, and at this time, the aging test current I 1 flows reversely through the IGBT401 and the FWD402, and at this time, it is called that a forward and reverse aging current test is performed on the unit under test 40. And performing forward and reverse aging current tests on the unit 40 to be tested for a specified number of times until the unit 40 to be tested fails, so as to obtain the service life of the unit 40 to be tested. Wherein the service life is defined as the median of the number of tests to disable the unit under test 40.
The failure of the unit under test 40 means that the saturation voltage of the IGBT401 after the test is higher than the initial saturation voltage by a certain threshold value, that is, the unit under test 40 is determined to fail, and the median of the number of tests performed until the unit under test 40 fails is the service life of the unit under test 40.
Step S120, the service life of the unit to be tested under the forward aging current test is tested.
In this embodiment, step S110 may be implemented in the following manner: and controlling the second GTO302 and the third GTO303 to be in a closed state all the time, and controlling the first GTO301 and the fourth GTO304 to be on, and controlling the first current source 10 to generate an aging test current I 1, wherein the aging test current flows forward through the unit under test 40, and then closing the first GTO301 and the fourth GTO304, and no current flows through the unit under test 40, which is called as performing a forward aging current test on the unit under test 40. And performing forward aging current test on the unit 40 to be tested for a specified number of times until the unit 40 to be tested fails, so that the service life of the unit 40 to be tested can be indirectly obtained.
And step S130, obtaining the corresponding relation between the equivalent aging current and the aging test current according to the service life of the unit to be tested under the forward and reverse aging test current and the service life of the unit to be tested under the forward aging test current.
In this embodiment, step S110 may be implemented in the following manner: the test data of the unit under test 40 under forward and reverse aging test current I 1 and the test data of the unit under test under forward aging test current both satisfy Weber's distribution law, and the relationship between the failure rate and the switching test times of the unit under test 40 can be obtained according to the test data of the unit under test 40 under forward and reverse aging test currentWherein F 1 (x) is the failure rate of the unit under test 40 under the forward and reverse aging test current, a 1、n1 is a constant, and can be obtained by calculation from test data, and x represents the number of switch tests.
The relation between the failure rate and the switching test times of the unit under test 40 can be obtained according to the test data of the unit under test 40 under the forward aging test currentWherein F 2 (x) is the failure rate of the unit under test 40 under the forward aging test current, and a 2、n2 is a constant, which can be calculated by the test data.
Since the FWD402 has an accelerated aging effect on the unit under test 40, an equivalent aging current I 2 eq＝I2 G+a2I2 D can be obtained, where the equivalent aging current I eq is an equivalent aging current of the unit under test 40, the I G and I D are currents flowing through the IGBT401 and FWD402, and the values of I G and I D are the same as the magnitudes of the aging test current. Thus, I eq＝qIG can be calculated according to a formula, wherein it can be derived from a combination of the above formulasWherein, gamma is gamma function, a 1、a2、n1、n2 is a constant in the above formula, and can be calculated according to weber distribution of test data, thus, after q value is calculated, the value of I eq can be calculated, and the corresponding relation between I eq and aging test current can be obtained.
And step S140, carrying out forward and reverse aging current tests on the unit to be tested with different current magnitudes until the unit to be tested fails, obtaining the service lives of the unit to be tested under the forward and reverse aging current tests with different current magnitudes, and obtaining the service lives of the unit to be tested under different aging test currents.
In this embodiment, step S110 may be implemented in the following manner: firstly setting the ageing test current to be 0.8 times of I 1, then carrying out forward and reverse ageing current test on the unit 40 to be tested, obtaining an ageing test result curve under the condition of 0.8 times of I 1 current after the test is completed, and fitting to obtain the failure rate of the unit 40 to be tested under the condition of 0.8 times of I 1 Wherein a 3、n3 is the distribution parameter of the aging test result curve, which can be obtained by calculation through test data.
Similarly, forward and reverse aging current test under the condition of 0.6 times of I 1 is carried out, an experimental result curve is obtained, and the failure rate of the unit 40 to be tested under the condition of 0.6 times of I 1 is obtained by fittingWherein a 4、n3 is the distribution parameter of the aging test result curve, which can be obtained by calculation through test data.
From the formula of F 1(x)、F3(x)、F4 (x)Wherein N f is the service life of the unit 40 to be tested, the specified service life is the median of the number of switch tests after the unit 40 to be tested is tested to fail, b, c, d are constants, and the least square method is adopted to calculate according to the experimental result curve.
According to the above formula, the corresponding relationship between the service life N f of the unit under test 40 and the I eq can be obtained, and the corresponding relationship between the I eq and the aging test current is obtained in the above steps, so that the corresponding relationship between the service life N f and the aging test current can be easily obtained, the service lives of the devices can be different due to different test currents, and the service lives of the devices under different currents can be estimated according to the corresponding relationship, so that the estimated result is more convincing.
It should be noted that, the 0.8 times I 1 and the 0.6 times I 1 mentioned in the above description are all examples, and in other implementations of the present embodiment, the current with other times relationship may be used as the aging test current to perform experiments to complete the estimation of the service life.
In other implementations of this embodiment, the influence of temperature on the experimental result may also be considered when calculating the correspondence between the service lives N f and I eq, and the method is based on the arrhenius empirical coefficient, that is, the service life is halved every 10 degrees celsiusWherein T is the ambient temperature during the test, k is the temperature influence coefficient, and the ambient temperature during the test is carried into the temperature influence coefficient to obtain/>Therefore, considering the influence of temperature on experimental results, the corresponding relation between the service life N f and the service life I eq can be expressed as/>Where T is the ambient temperature at which the burn-in test is performed in the above step, and T is the ambient temperature at which the unit under test 40 is located.
In summary, the present application relates to an IGBT burn-in test circuit and method, the circuit includes: the device comprises a first current source, a second current source, a forward and reverse diversion unit and a unit to be tested. The first current source provides an aging test current for the unit to be tested through the forward and reverse diversion units, and the forward and reverse diversion units are used for adjusting the direction of the aging test current flowing through the unit to be tested so as to simulate the working state of the IGBT through the aging test current flowing through the unit to be tested; and the second current source provides junction temperature test current for the unit to be tested so as to test the saturated voltage of the unit to be tested under the junction temperature test current, and the IGBT is subjected to aging test through the saturated voltage. The aging test circuit is used for completing the aging test of the IGBT, carrying out online evaluation and prediction on the service life of the IGBT, effectively monitoring the working state of the IGBT, replacing the IGBT to be damaged in advance and guaranteeing the safe operation of the rail train. Meanwhile, according to the multiple experimental results, the corresponding relation between the service life of the device and the test current and the environment temperature during the test is fitted, and the service life of the power switch device under various use conditions can be estimated.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (9)
1. An Insulated Gate Bipolar Transistor (IGBT) burn-in circuit, comprising: the device comprises a first current source, a second current source, a forward and reverse diversion unit and a unit to be tested;
The unit to be tested comprises an IGBT and a freewheeling diode FWD, and the FWD is connected between a collector and an emitter of the IGBT;
The first current source provides an aging test current for the unit to be tested through the forward and reverse diversion units, and the forward and reverse diversion units are used for adjusting the direction of the aging test current flowing through the unit to be tested so as to simulate the working state of the IGBT through the aging test current flowing through the unit to be tested;
The second current source is connected in parallel with the unit to be tested, provides junction temperature test current for the unit to be tested, tests saturated voltage of the unit to be tested under the junction temperature test current, and performs aging test on the IGBT through the saturated voltage; the forward and reverse diversion unit comprises a first GTO, a second GTO, a third GTO and a fourth GTO;
The anodes of the first GTO and the second GTO are connected with the anode of the first current source, the cathode of the first GTO is connected with the collector of the IGBT, and the cathode of the second GTO is connected with the emitter of the IGBT;
and the cathodes of the third GTO and the fourth GTO are connected with the cathode of the first current source, the anode of the third GTO is connected with the collector of the IGBT, and the anode of the fourth GTO is connected with the emitter of the IGBT.
2. The burn-in circuit of claim 1 wherein the circuit further comprises a fifth GTO;
The positive pole of the fifth GTO is connected with the positive pole of the first current source, the negative pole of the fifth GTO is connected with the negative pole of the first current source, and the branch circuit where the fifth GTO is located is a follow current channel of the aging test current.
3. The burn-in circuit of claim 2 further comprising an inductance disposed between the first current source and the forward and reverse conduction units for stabilizing the burn-in current.
4. The burn-in circuit of claim 3 wherein the circuit further comprises a voltmeter;
The voltmeter is connected with the unit to be tested in parallel and is used for testing the saturation voltage of the unit to be tested under the junction temperature test current.
5. The burn-in circuit of claim 4 wherein the circuit further comprises an absorption cell;
and the absorption unit is connected with the unit to be detected in parallel and is used for absorbing the peak voltage of the IGBT in the unit to be detected.
6. The burn-in circuit of claim 5 wherein the absorption cell comprises a resistor and a capacitor connected in series and then connected in parallel with the cell under test.
7. An IGBT burn-in test method applied to the burn-in test circuit according to any one of claims 1 to 6, the method comprising:
Testing the service life of a unit to be tested under forward and reverse aging current test;
Testing the service life of the unit to be tested under the forward aging current test;
Obtaining a corresponding relation between equivalent aging current and aging test current according to the service life of the unit to be tested under forward and reverse aging test current and the service life of the unit to be tested under forward aging test current;
And carrying out forward and reverse aging current tests on the unit to be tested with different current magnitudes until the unit to be tested fails, so as to obtain the service lives of the unit to be tested under the forward and reverse aging current tests with different current magnitudes, and obtain the service lives of the unit to be tested under different aging test currents.
8. The method of claim 7, wherein testing the lifetime of the unit under test under forward and reverse burn-in current testing comprises:
measuring the initial saturation voltage of the unit to be measured under the junction temperature test current;
after forward and reverse aging current testing is carried out on the unit to be tested for a specified number of times, measuring the saturation voltage of the unit to be tested under junction temperature testing current;
comparing the tested saturated voltage with the initial saturated voltage, and judging that the unit to be tested fails to obtain the service life if the saturated voltage exceeds the initial saturated voltage by a preset voltage threshold;
And if the saturated voltage does not exceed the initial saturated voltage preset voltage threshold, continuing to perform forward and reverse current test on the unit to be tested, and updating the saturated voltage until the updated saturated voltage exceeds the initial saturated voltage preset voltage threshold, so as to obtain the service life.
9. The method of claim 7, wherein testing the lifetime of the unit under test under the forward burn-in current test comprises:
measuring the initial saturation voltage of the unit to be measured under the junction temperature test current;
After forward aging current testing is carried out on the unit to be tested for a specified number of times, measuring the saturation voltage of the unit to be tested under junction temperature testing current;
comparing the tested saturated voltage with the initial saturated voltage, and judging that the unit to be tested fails to obtain the service life if the saturated voltage exceeds the initial saturated voltage by a preset voltage threshold;
and if the saturated voltage does not exceed the initial saturated voltage preset voltage threshold, continuing to perform forward current test on the unit to be tested, and updating the saturated voltage until the updated saturated voltage exceeds the initial saturated voltage preset voltage threshold, so as to obtain the service life.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP7343180B2 (en) * | 2019-08-07 | 2023-09-12 | 株式会社クオルテック | Electrical element testing equipment |
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| CN112526333A (en) * | 2020-11-05 | 2021-03-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Current type aging test system and switch device aging test method |
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