CN109975682A - A kind of device lifetime test platform and system - Google Patents
A kind of device lifetime test platform and system Download PDFInfo
- Publication number
- CN109975682A CN109975682A CN201910289747.6A CN201910289747A CN109975682A CN 109975682 A CN109975682 A CN 109975682A CN 201910289747 A CN201910289747 A CN 201910289747A CN 109975682 A CN109975682 A CN 109975682A
- Authority
- CN
- China
- Prior art keywords
- test
- area
- detected
- temperature
- test data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The embodiment of the present invention proposes a kind of device lifetime test platform and system, is related to units test technical field.The device lifetime test platform includes test job area, test data treatment region and test data collection area, test job area is for placing device to be detected, test data treatment region with test job area be electrically connected, to control signal forward or backwards to device to be detected output, test data collection area is electrically connected with test job area, and forward direction or backward voltage for obtaining device to be detected, and the forward direction or backward voltage that will acquire are transmitted to test data treatment region, test data treatment region is used for when positive or backward voltage reaches with presetting voltage value, control the intermittent conducting of device to be detected, until device aging to be detected, to test out the service life of device to be detected.
Description
Technical field
The present invention relates to units test technical fields, in particular to a kind of device lifetime test platform and system.
Background technique
Power circulation test is AEC Q101, and LV324 waits the indispensable survey in vehicles rule grade reliability of Power Modules testing standard
Examination, however, power circulation test platform currently on the market contributes to test silicon substrate (Si) power device, such as IGBT, MOSFET
Deng.But due to the characteristic of material, current testboard is not particularly suited for the device of other materials, for example, due to silicon carbide
(SiC) MOSFET element is slightly different in material property and device design aspect and popular IGBT device, is caused existing in the market
Some power circulation test platforms are unable to complete the test job of other materials device.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of device lifetime test platform, to solve to survey in the prior art
Test stand is only able to achieve the test to silicon-based power devices.
Another object of the present invention is to provide a kind of device lifetime test macro, to solve in the prior art, testboard is only
It is able to achieve the test to silicon-based power devices.
To achieve the goals above, technical solution used in the embodiment of the present invention is as follows:
On the one hand, the embodiment of the present invention proposes that a kind of device lifetime test platform, the device lifetime test platform include
Test job area, test data treatment region and test data collection area, the test job area are used to place device to be detected,
The test data treatment region is electrically connected with the test job area, to control forward or backwards to the device output to be detected
Signal processed, the test data collection area are electrically connected with the test job area;The test data collection area is for obtaining institute
State the forward direction of the device to be detected perhaps backward voltage and positive or backward voltage that will acquire is transmitted to the test number
According to treatment region, the test data treatment region is used for when the positive or backward voltage reaches with presetting voltage value,
The intermittent conducting of device to be detected is controlled, until the device aging to be detected, to test out the device to be detected
Service life.
Further, the device lifetime test platform further includes temperature-controlled area, the temperature-controlled area and the survey
Workspace connection is tried, the temperature-controlled area is used to maintain the temperature of the device to be detected.
Further, the test job area is provided with coldplate, and the device to be detected is connect with the coldplate, and
The coldplate is connect with a cooling water pipe, and the temperature-controlled area is connected with the cooling water pipe, and the temperature-controlled area is used
In the temperature for controlling the coldplate by the cooling water pipe, to maintain the temperature of the device to be detected.
Further, the test job area further includes temperature-detecting device, the temperature-detecting device and the temperature
Control zone electrical connection, the temperature-detecting device are used to measure the environment temperature of the device to be detected, the temperature-controlled area
For controlling the temperature of the coldplate according to the environment temperature, to maintain the environment temperature of the device to be detected constant.
Further, the device lifetime test platform further include load output area, the load output area respectively with institute
State test job area, test data treatment region electrical connection.
Further, the load output area includes auxiliary switch, the auxiliary switch and the test data treatment region
Electrical connection, the test data treatment region are used to control the shutdown of the auxiliary switch, control the device to be detected to realize
The intermittent conducting of part.
Further, the also included distribution box of device lifetime test platform, the load output area further includes direct current
Current source, the DC current source are electrically connected with the distribution box, and in the closure state, the load is defeated for the auxiliary switch
Area provides electric current for the device to be detected out.
Further, the device lifetime test platform further includes observation area, the observation area and the test data
Treatment region electrical connection, the test data treatment region are also used to send data to the observation area and are shown.
Further, the test data collection area includes data acquisition circuit, the electric current that the test job area includes
Output end and voltage output end, the data acquisition circuit are electrically connected with the current output terminal, the voltage output end respectively,
So that the test data collection area acquires the electric current and voltage of the device to be detected.
On the other hand, the embodiment of the invention also provides a kind of device lifetime test macro, device lifetime test systems
System includes device to be detected and device lifetime test platform, and the device to be detected is installed on the device lifetime test platform
Test job area.
Compared with the prior art, the invention has the following advantages:
The present invention provides a kind of device lifetime test platform and systems, which includes test job
Area, test data treatment region and test data collection area, test job area is for placing device to be detected, test data processing
Area with test job area be electrically connected, to control signal forward or backwards to device to be detected output, test data collection area with
The electrical connection of test job area, and for obtaining the forward direction of device to be detected perhaps backward voltage and the forward direction that will acquire or anti-
To voltage transmission to test data treatment region, test data treatment region be used for when positive or backward voltage reach with it is presetting
When voltage value, the intermittent conducting of device to be detected is controlled, until device aging to be detected, to test out the longevity of device to be detected
Life.Signal is controlled forward or backwards due to that can export to device to be detected the present embodiment provides device lifetime test platform, because
Load current is added when the mode that forward conduction can be used in the test process for carrying out silicon-based devices in this, is allowed to fever and reaches survey
Effect is tried, and for the device of other materials, such as silicon carbide device, device lifetime test platform can test the reversed of device
Electric current and backward voltage to show out the temperature of device by backward voltage, and then test out the service life of silicon carbide device, from
And device lifetime test platform provided by the invention is enable to test service life of multiple material device.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the module diagram of the device lifetime test platform of one embodiment of the present of invention offer.
Icon: 100- device lifetime test platform;110- test job area;120- test data treatment region;130- test
Data collection zone;140- temperature-controlled area;150- load output is gone;160- distribution box;The observation area 170-.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Below in conjunction with attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and be designed with a variety of different configurations herein.Cause
This, is not intended to limit claimed invention to the detailed description of the embodiment of the present invention provided in the accompanying drawings below
Range, but it is merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.Meanwhile of the invention
In description, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " connected ", " connection " shall be understood in a broad sense,
It for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected;It can be mechanical connection, be also possible to electricity
Connection;It can be directly connected, the connection inside two elements can also be can be indirectly connected through an intermediary.For
For those skilled in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.It ties below
Attached drawing is closed, is elaborated to some embodiments of the present invention.In the absence of conflict, following embodiment and embodiment
In feature can be combined with each other.
First embodiment
Referring to Fig. 1, the present invention provides a kind of device lifetime test platform 100, the device lifetime test platform 100 packet
Include test job area 110, test data treatment region 120, test data collection area 130, load output area, distribution box 160, temperature
Control zone 140 and observation area 170, wherein temperature-controlled area 140 is connect with test job area 110, and test job area 110 divides
Be electrically connected with load output area, test data collection area 130, test data treatment region 120 respectively with load output area, observe
Area 170 is electrically connected.
Specifically, test job area 110 is for placing device to be detected, test data treatment region 120 and test job
Area 110 is electrically connected, to control signal forward or backwards to device to be detected output, wherein the present embodiment provides at test data
Manage area 120 and load output area, the sequentially connected mode in test job area 110 indirectly to device to be detected export it is positive or
Reverse control signal.
Wherein, load current can be added in the devices such as silicon substrate IGBT by the way of forward conduction during the test, be allowed to
Fever reaches test effect;Silicon substrate MOSFET is then load current to be added by reverse-conducting device (reverse p-n junctions) is made to generate heat.
The test method of both the above device can all make electric current (load and detection electric current) by the structure of some pn-junction in device, and
Certain functional relation is presented with the temperature of device under certain current condition in such pn-junction.So that silicon-based devices can lead to
The mode for crossing electrical testing obtains temperature change of the device in power circulation test.
But silicon carbide MOSFET device can not be tested by way of reverse load electric current, and reason is silicon carbide
Reverse p-n junctions in MOSFET will appear degeneration under conditions of large load current, so that obtaining in device test procedures unstable
Operating condition.
And in the present embodiment, test data treatment region 120 controls the shape that silicon carbide MOSFET is in forward conduction first
State, the forward conduction voltage of data acquisition board sampler.Then grid voltage is reversed according to control signal, turns off device.This
When detection current source and device voltage collection plate carry out simultaneously reversely, device obtains inverse detection electric current, and low current passes through device
Reverse p-n junctions not will cause the degeneration of device electrology characteristic.The device reverse voltage acquired at this time can reflect the temperature of device.
Specifically, test data collection area 130 is electrically connected with test job area 110, and for obtaining device to be detected
Positive perhaps backward voltage and the forward direction that will acquire or backward voltage are transmitted to test data treatment region 120, at test data
Reason area 120 controls the intermittent conducting of device to be detected, directly when positive or backward voltage reaches with presetting voltage value
To device aging to be detected, to test out the service life of device to be detected.
Further, in order to maintain device to be detected environment temperature balance, device lifetime test platform 100 further includes
Temperature-controlled area 140, temperature-controlled area 140 are connect with test job area 110, and temperature-controlled area 140 is for maintaining device to be detected
The temperature of part.
Further, test job area 110 is provided with coldplate, and device to be detected is connect with coldplate, and coldplate with
The connection of one cooling water pipe, temperature-controlled area 140 are connected with cooling water pipe, and temperature-controlled area 140 is controlled by cooling water pipe and cooled down
The temperature of plate, to maintain the temperature of device to be detected, for example, when the temperature of device to be detected is higher, 140 meeting of temperature-controlled area
The water temperature controlled in cooling water pipe reduces, the temperature to reduce device to be detected in the way of heat transmitting.
Specifically, test job area 110 further includes temperature-detecting device, 140 electricity of temperature-detecting device and temperature-controlled area
Connection, temperature-detecting device is used to measure the environment temperature of device to be detected, while temperature-controlled area 140 is according to environment temperature control
The temperature of coldplate processed, to maintain the environment temperature of device to be detected constant.
Further, device lifetime test platform 100 further include load output area, load output area respectively with test job
Area 110, test data treatment region 120 are electrically connected, wherein load output goes 150 to be used to provide DC load current and control
The direct current output time.
Specifically, load output area includes auxiliary switch, and auxiliary switch is electrically connected with test data treatment region 120, test
Shutdown of the data processing area 120 for the auxiliary switch of control controls the intermittent conducting of device to be detected to realize, to reach
Control the effect of direct current output time.
Further, the also included distribution box 160 of device lifetime test platform 100, load output area further includes direct current
Stream source, DC current source are electrically connected with distribution box 160, and in the closure state, load output area is device to be detected to auxiliary switch
Part provides electric current.
Further, device lifetime test platform 100 further includes observation area 170, observation area 170 and test data handle
Area 120 is electrically connected, and test data treatment region 120 is also used to send data to observation area 170 and is shown.In the present embodiment
In, observation area 170 includes the devices such as display and keyboard, and of course, in other some embodiments, observation area 170 can also
To include other devices, the present embodiment does not do any restriction to this.
Further, test data collection area 130 includes data acquisition circuit, and the electric current that test job area 110 includes is defeated
Outlet and voltage output end, data acquisition circuit is electrically connected with current output terminal, voltage output end respectively, so that test data is adopted
Collection area 130 acquires the electric current and voltage of device to be detected.
It is also desirable to which explanation, in the present embodiment, device lifetime test platform 100 further include that temperature adjusts dress
It sets, the temperature in control section test job area 110 is capable of by temperature-adjusting device.For example, temperature-adjusting device can be outside one
The thermoregulators such as shell and air-conditioning, being capable of simulated environment temperature by temperature-adjusting device, it can control test job area 110
Temperature.
Since in actual operation, environment temperature locating for automobile may change, thus in order to more comprehensively into
The test of row device lifetime can adjust environment temperature by temperature-adjusting device, complete the longevity of the device lifetime under different operating conditions
Life.
For example, temperature and the coolant water temperature in test job area 110 remain unchanged, and equipment is as general as the first operating condition
Logical power circulation test platform works, can simulation test go out that automobile ambient temperature is stable and automotive interior temperature is steady
The service life of device in the case where fixed.
As second of operating condition, test table keep it is temperature-resistant, and coolant water temperature according to control software set in function
Cyclically-varying is generated in rate loop test.That is temperature-adjusting device control temperature does not convert, cooling water generating period
Transformation, to simulate the service life of device in the case that environment temperature is constant in cooling system temperature oscillation.
As the third operating condition, test table temperature generates periodically change according to control software in power circulation test
Change, and cooling water temperature remains unchanged.Such situation simulated environment temperature change, and cooling system is kept for making for steady timing device
Use the service life.
As the 4th kind of operating condition, test table and coolant water temperature are all according to control software set in power circulation test
Generate cyclically-varying in the same direction.In the case that such situation simulation cooling system changes with room temperature variation, the use of device
Service life.
By the thermostatic mode of above-mentioned setting, can be realized the device tested under different operating conditions uses the longevity
Life, it is more convenient.
Second embodiment
The embodiment of the invention also provides a kind of device lifetime test macros, which includes to be detected
Device lifetime test platform 100 described in device and first embodiment, device to be detected are installed on device lifetime test platform 100
Test job area 110.
In conclusion the present invention provides a kind of device lifetime test platform and system, the device lifetime test platform packet
Test job area, test data treatment region and test data collection area are included, test job area is surveyed for placing device to be detected
Examination data processing area with test job area be electrically connected, to control signal forward or backwards to device to be detected output, test number
It is electrically connected according to acquisition zone with test job area, and forward direction or backward voltage for obtaining device to be detected, and will acquire
Positive perhaps backward voltage is transmitted to test data treatment region test data treatment region for reaching when forward direction or backward voltage
When with presetting voltage value, the intermittent conducting of device to be detected is controlled, until device aging to be detected, to be detected to test out
The service life of device.It is controlled forward or backwards due to that can be exported to device to be detected the present embodiment provides device lifetime test platform
Signal, therefore load current is added in the mode that forward conduction ought can be used in the test process for carrying out silicon-based devices, is allowed to send out
Heat reaches test effect, and for the device of other materials, such as silicon carbide device, device lifetime test platform being capable of tester
The reverse current and backward voltage of part, to show out the temperature of device by backward voltage, and then test out silicon carbide device
Service life, so that device lifetime test platform provided by the invention be enable to test service life of multiple material device.
It should be noted that, in this document, the relational terms of such as " first " and " second " or the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.It should also be noted that similar label and letter exist
Similar terms are indicated in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, are then not required in subsequent attached drawing
It is further defined and explained.
Claims (10)
1. a kind of device lifetime test platform, which is characterized in that the device lifetime test platform includes test job area, test
Data processing area and test data collection area, the test job area is for placing device to be detected, at the test data
Reason area is electrically connected with the test job area, to control signal, the survey forward or backwards to the device output to be detected
Examination data collection zone is electrically connected with the test job area;
The test data collection area is used to obtain the forward direction or backward voltage of the device to be detected, and will acquire described
Positive or backward voltage is transmitted to the test data treatment region;
The test data treatment region is used to control institute when the positive or backward voltage reaches with presetting voltage value
The intermittent conducting of device to be detected is stated, until the device aging to be detected, to test out the service life of the device to be detected.
2. device lifetime test platform as described in claim 1, which is characterized in that the device lifetime test platform further includes
Temperature-controlled area, the temperature-controlled area are connect with the test job area, and the temperature-controlled area is for remaining described to be checked
Survey the temperature of device.
3. device lifetime test platform as claimed in claim 2, which is characterized in that the test job area is provided with cooling
Plate, the device to be detected is connect with the coldplate, and the coldplate is connect with a cooling water pipe, the temperature-controlled area
It being connected with the cooling water pipe, the temperature-controlled area is used to control the temperature of the coldplate by the cooling water pipe, with
Maintain the temperature of the device to be detected.
4. device lifetime test platform as claimed in claim 3, which is characterized in that the test job area further includes temperature inspection
Survey device, the temperature-detecting device be electrically connected with the temperature-controlled area, the temperature-detecting device be used to measure described in
The environment temperature of device is detected, the temperature-controlled area is used to control the temperature of the coldplate according to the environment temperature, with
Maintain the environment temperature of the device to be detected constant.
5. device lifetime test platform as described in claim 1, which is characterized in that the device lifetime test platform further includes
Output area is loaded, the load output area is electrically connected with the test job area, the test data treatment region respectively.
6. device lifetime test platform as claimed in claim 5, which is characterized in that the load output area includes that auxiliary is opened
It closes, the auxiliary switch be electrically connected with the test data treatment region, and the test data treatment region is for auxiliary described in controlling
Switch-off is helped, controls the intermittent conducting of device to be detected to realize.
7. device lifetime test platform as claimed in claim 6, which is characterized in that the device lifetime test platform further includes
Distribution box, the load output area further includes DC current source, and the DC current source is electrically connected with the distribution box, described
In the closure state, the load output area provides electric current for the device to be detected to auxiliary switch.
8. device lifetime test platform as described in claim 1, which is characterized in that the device lifetime test platform further includes
Observation area, the observation area are electrically connected with the test data treatment region, and the test data treatment region is also used to data
The observation area is transmitted to be shown.
9. device lifetime test platform as described in claim 1, which is characterized in that the test data collection area includes data
Acquisition Circuit, the current output terminal and voltage output end that the test job area includes, the data acquisition circuit and respectively institute
Current output terminal, voltage output end electrical connection are stated, so that the test data collection area acquires the device to be detected
Electric current and voltage.
10. a kind of device lifetime test macro, which is characterized in that the device lifetime test macro include device to be detected with such as
Device lifetime test platform described in claim 1 to 9 any one, the device to be detected are installed on the device lifetime survey
Try the test job area of platform.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910289747.6A CN109975682A (en) | 2019-04-11 | 2019-04-11 | A kind of device lifetime test platform and system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910289747.6A CN109975682A (en) | 2019-04-11 | 2019-04-11 | A kind of device lifetime test platform and system |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109975682A true CN109975682A (en) | 2019-07-05 |
Family
ID=67084169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910289747.6A Pending CN109975682A (en) | 2019-04-11 | 2019-04-11 | A kind of device lifetime test platform and system |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109975682A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080186049A1 (en) * | 2007-02-02 | 2008-08-07 | Commissariat A L'energie Atomique | Process and circuit for improving the life duration of field-effect transistors |
CN102385029A (en) * | 2011-08-26 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for testing high-voltage MOS device |
CN107315138A (en) * | 2016-04-21 | 2017-11-03 | 深圳市智鼎自动化技术有限公司 | Power MOSFET failure predication and health treatment method and test system |
CN107861040A (en) * | 2016-09-22 | 2018-03-30 | 北京航空航天大学 | A kind of IGBT intermittent life test methods based on simulation modeling and short-term test |
CN107966641A (en) * | 2017-12-06 | 2018-04-27 | 珠海泰芯半导体有限公司 | A kind of IGBT life monitoring systems |
CN108919085A (en) * | 2018-10-17 | 2018-11-30 | 北京交通大学 | IGBT burn in test circuit and method |
-
2019
- 2019-04-11 CN CN201910289747.6A patent/CN109975682A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080186049A1 (en) * | 2007-02-02 | 2008-08-07 | Commissariat A L'energie Atomique | Process and circuit for improving the life duration of field-effect transistors |
CN102385029A (en) * | 2011-08-26 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for testing high-voltage MOS device |
CN107315138A (en) * | 2016-04-21 | 2017-11-03 | 深圳市智鼎自动化技术有限公司 | Power MOSFET failure predication and health treatment method and test system |
CN107861040A (en) * | 2016-09-22 | 2018-03-30 | 北京航空航天大学 | A kind of IGBT intermittent life test methods based on simulation modeling and short-term test |
CN107966641A (en) * | 2017-12-06 | 2018-04-27 | 珠海泰芯半导体有限公司 | A kind of IGBT life monitoring systems |
CN108919085A (en) * | 2018-10-17 | 2018-11-30 | 北京交通大学 | IGBT burn in test circuit and method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104090224B (en) | The on-line detecting system of a kind of power diode module working junction temperature and detection method | |
Bright | Junction transistors used as switches | |
CN107991597A (en) | A kind of control method of IGBT reliability tests, apparatus and system | |
CN111537859A (en) | High-temperature bias test system and method for power semiconductor device | |
CN104601019A (en) | Smart power module, power device and temperature detection circuit and method of power device | |
EP3190423B1 (en) | Thermal clutch for thermal control unit and methods related thereto | |
Man et al. | Dynamic performance of maximum power point trackers in TEG systems under rapidly changing temperature conditions | |
Qi et al. | Development of a high-temperature gate drive and protection circuit using discrete components | |
CN109975682A (en) | A kind of device lifetime test platform and system | |
RU2724183C1 (en) | Automation technology field device based on energy technology via ethernet | |
Ghimire | Real time monitoring and wear out of power modules | |
KR101058095B1 (en) | Performance Measurement System and Method of Semiconductor Devices | |
KR20150003019A (en) | Tester for semiconductor device and method thereof | |
CN112667005A (en) | Onboard low-temperature intelligent heating circuit and method | |
Davis et al. | Methodology and apparatus for rapid power cycle accumulation and in-situ incipient failure monitoring for power electronic modules | |
CN110824329A (en) | IGCT device blocking characteristic parameter testing unit and testing device thereof | |
CN112254826A (en) | Thermal infrared imager temperature control system for restraining detector temperature drift | |
CN108387774B (en) | Power cycle test system based on 750A semiconductor device | |
CN211577330U (en) | IGCT device blocking characteristic parameter testing unit and testing device thereof | |
US20110147359A1 (en) | Computer component testing system and temperature control device thereof | |
CN108107333B (en) | IGBT thermosensitive inductive parameter extraction device | |
CN115411703A (en) | Power conversion apparatus and protection method thereof | |
Nujithra et al. | Investigation of efficient heat dissipation mechanisms for programmable DC electronic load design | |
KR20220128960A (en) | Unified measurement system for static and dynamic characterization of a device under test | |
CN108318756A (en) | A kind of high-voltage power unit test system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190705 |
|
RJ01 | Rejection of invention patent application after publication |