CN106788366A - A kind of voltage equalizing protection circuit for series IGBT - Google Patents
A kind of voltage equalizing protection circuit for series IGBT Download PDFInfo
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- CN106788366A CN106788366A CN201611027624.8A CN201611027624A CN106788366A CN 106788366 A CN106788366 A CN 106788366A CN 201611027624 A CN201611027624 A CN 201611027624A CN 106788366 A CN106788366 A CN 106788366A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
The invention discloses a kind of voltage equalizing protection circuit for series IGBT, including voltage acquisition module, the i-th comparator, control module and resistance module；Wherein, i is the arbitrary integer of 1~N, and N is natural number；I-th output end of the voltage acquisition module connects the i-th comparator; first output end of i-th comparator connects the i-th input of resistance module; the input of the second output end link control module of first comparator; the output end of the control module connects the N+1 inputs of resistance module, the output end of the resistance module as the voltage equalizing protection circuit output end.The present invention utilizes given threshold, and square-wave signal is obtained according to collection emitter voltage signal, so as to change the size of resistance, the climbing speed of collection emitter voltage can be adjusted, reduce crest voltage, inhibit simultaneously because of the overvoltage influence that signal transmission circuit stray parameter different band is come, excessive pressure damages risks of the IGBT in the current off-phases of tandem working with whole work period can be avoided.
Description
Technical field
The invention belongs to field of power electronics, more particularly, to a kind of voltage equalizing protection circuit for series IGBT.
Background technology
By consolidating that insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is constituted
State electronic power switch has switching speed fast, and controllability is strong, the characteristics of long lifespan, while in order to be applied to high voltage field,
Multiple IGBT must be serially connected using reaching voltage class higher, program effect well low cost simultaneously, therefore obtained
Extensive concern and application.
When IGBT is used in series, due to nuance and the stray inductance of circuit between each semiconductor devices etc.
Influence, in causing switching process each device pressure-bearing is unbalanced, the service life and operating efficiency of strong influence switch, very
Device breakdown can be extremely caused to damage.Ensure that voltage's distribiuting equilibrium of the semiconductor devices in switching process is to realize high-voltage solid-state electricity
The key of power electronic switch.
There are various solutions to this prior art：First method is to realize more essence using feedback control in drive end
True device voltage is dynamically adjusted, and the collection emitter voltage of each IGBT is reached unanimity, but the complex structure of the circuit, if its
Zhong Mou roads controller failure Ze Gai road IGBT are necessarily damaged, and as devices in series number increases, control complexity is also significantly
Lifting；Second method is, in power end dynamic buffer circuit in parallel, static state voltage equipoise circuit, to carry out inductance present in absorption circuit
Energy slows down quiescent voltage caused by semiconductor devices due to leakage current difference by static state voltage equipoise circuit to avoid overvoltage
Unbalanced problem, the program increases with Tandem devices number, can increase the volume of whole device；Simultaneously as dynamic buffering
Circuit is passive device, reduction device peak voltage that can only be more rough, and can all be acted in the whole work period
So as to bring larger loss.
Therefore, the combination solution serial semiconductor voltage in current high-pressure solid-state switch field by two schemes is unbalanced
Problem, such as non-patent literature《IEEE Transactions on Power Electronics》,2015,30(8):4165-
A kind of method that utilization feedback control realizes the active voltage balance of series IGBT is disclosed in 4174.Using the method, dynamic
Buffer circuit uses resistance-capacitance scheme, and static state voltage equipoise circuit uses resistor proposal, and drive feedback control is using series connection transient state pincers
Position diode (TVS), because transient state clamp diode can puncture under certain voltage, when IGBT is turned off, by detecting transient state
Electric current in clamp diode, it can be determined that each IGBT boosts to the time of certain setting collection emitter voltage during series connection, and this is believed
Cease and controller is sent to so as in the relative delay of each road IGBT switching signals of next period modulation by optical fiber.
One, in this scenario, there is larger difference in the transient state clamp diode of same size, its operation voltage, in addition,
Same transient state clamp diode, its operation voltage with its temperature change, therefore be able to can also be brought using transient state clamp diode
Great feedback error, and the general high voltage IGBT turn-off times in 1us~2us or so, the error can strong influence control effect
Fruit even causes IGBT excessive pressure damages on the contrary；Secondly, for avoid transient state clamp diode because frequently puncture damage, be typically all provided with
It is the 115%~120% of IGBT real work voltages to put operation voltage, then the transient state that will there are some IGBT clamps two poles
The situation that pipe does not puncture because voltage's distribiuting is irregular, will also result in feedback error.Thirdly, in this scenario, use transient state pincers
Position diode comes switching capacitance, resistance, and the electric current of its feed-in IGBT control ends is smaller to make action effect there is larger time delay, and
There is also foregoing operation voltage shakiness problem.
The content of the invention
For the defect of prior art, it is an object of the invention to provide a kind of voltage equalizing protection electricity for series IGBT
Road, it is intended to solve the problems, such as that IGBT is pressed and overvoltage protection in tandem working in the prior art.
The invention provides a kind of voltage equalizing protection circuit for series IGBT, including voltage acquisition module, N number of comparing
Device, control module and resistance module；N number of comparator be respectively first comparator, the second comparator ... to N
Comparator, N is natural number；
I-th output end of the voltage acquisition module connects the i-th comparator, and the first output end of i-th comparator connects
Connect the i-th input of resistance module, the input of the second output end link control module of first comparator, the control
The output end of module connects the N+1 inputs of resistance module, and the output end of the resistance module is used as described equal
The output end of voltage protection circuit, i is the integer of 1~N；
The voltage acquisition module is used to obtain low voltage signal corresponding with emitter voltage signal is collected；
I-th comparator is used to be compared with the i-th threshold value by by the low voltage signal, by low-voltage letter
Number be converted to the i-th square-wave signal, peak value of i-th threshold value less than the low voltage signal；
The control module is used for according to the first square-wave signal, sends drive signal；
The resistance module is used for according to i-th control signal and drive signal, changes overall resistance, and obtain
The grid for obtaining IGBT penetrate collecting voltage signal.
Preferably, the time delay of i-th comparator is less than 20ns.
Preferably, the ripple amplitude of i-th threshold value is less than 100mv.
Preferably, N >=2, and first threshold is incremented by successively to N threshold values.
Used as it is further preferred that N=2, the first threshold is the 1/3~2/5 of the peak value of low voltage signal, described the
Two threshold values are the 2/3~4/5 of the peak value of low voltage signal.
Preferably, the control module include control unit, isolated location and driver element, the isolated location it is defeated
Enter input of the end as the control module, interaction end connects the interaction end of control unit, output end connection driver element
Input, the output end of the driver element as the control module output end；
Described control unit is used for according to the first square-wave signal, sends the drive signal of unipolarity, low amplitude value, the isolation
Unit is used to isolate control unit and first comparator, and for isolating control unit and drive module, the drive module
For the drive signal according to the unipolarity, low amplitude value, bipolarity, the drive signal of amplitude are obtained.
As it is further preferred that the isolated location includes the first optical fiber receiver-transmitter module and second connected with optical fiber
Optical fiber receiver-transmitter module, the input of first optical fiber receiver-transmitter module as the isolated location input, output end conduct
The output end of the isolated location, the interaction end of second optical fiber receiver-transmitter module as the isolated location interaction end.
Preferably, the voltage acquisition module includes equalizing resistance, sampling resistor and voltage acquisition unit, described to press
The first end of resistance is used to connect the first end of IGBT, and the second end connects the first end and voltage acquisition mould of the sampling resistor
The first input end of block, the second end of the sampling resistor connects the second input of voltage acquisition module, and for connecting
Second end of IGBT；
The equalizing resistance is used to adjust the quiescent voltage of IGBT, and the sampling resistor is used to obtain collection emitter voltage letter
Number, the voltage acquisition unit is used to for collection emitter voltage signal to be converted to low voltage signal.
As it is further preferred that the time delay of the voltage acquisition unit is less than 150ns.
As it is further preferred that the temperature drift of the equalizing resistance and sampling resistor is less than 150ppm/ DEG C.
Preferably, the peak value of the collection emitter voltage signal is less than 10V, and the peak value of the low voltage signal is 5V.
Preferably, the resistance module is opened including basic resistance, N number of driver, N number of resistance and N number of semiconductor
Close, N number of driver be respectively the first driver, the second driver ... to N drivers, N number of resistance is respectively the
One resistance, second resistance ... to N resistance, N number of semiconductor switch is respectively the first semiconductor switch, the second semiconductor
Switch ... to N semiconductor switch, i-th resistance connects to form the i-th series circuit with the i-th semiconductor switch, and described i-th
Series circuit is in parallel with basic resistance；The resistance of i-th resistance is less than basic resistance；The input of i-th driver is made
It is the i-th input of the resistance module, output end connects the control end of the i-th semiconductor switch, the basic resistance
Input as the resistance module N+1 inputs, output end as the resistance module output end；
I-th driver is used for according to the i-th square-wave signal, obtains the i-th control signal, and i-th semiconductor switch is used
According to i-th control signal, conducting or the series circuit of disjunction i-th, so as to change the overall resistance of the resistance module
Value.
As it is further preferred that the time delay of i-th driver is less than 20ns.
Used as it is further preferred that N >=2, and first resistor is incremented by successively to the resistance of N resistance.
Used as it is further preferred that N=2, the resistance of the first resistor is the 1/4~1/2 of second resistance, described the
The 1/6~1/3 of resistance based on the resistance of two resistance.
Scheme proposed by the present invention has the advantages that：
1st, the present invention and obtains square-wave signal using the i-th threshold value of setting according to collection emitter voltage signal, so as to change
The size of resistance, can increase or slow down the climbing speed of collection emitter voltage, while the peak value of collection emitter voltage is reduced,
Inhibit because of the overvoltage influence that the transmission circuit stray parameter different band of collection emitter voltage signal is come, series IGBT can be avoided to exist
Excessive pressure damages risk in the current off-phases that work and whole work period；
2nd, because the low voltage signal of voltage acquisition module and the collection emitter voltage of IGBT are corresponding, and the i-th comparator is dynamic
Make the crest voltage of peak value × setting series IGBT of the voltage equivalent to the i-th threshold value ÷ low voltage signals, and the peak value of IGBT is electric
Pressure is typically set at the 110%~140% of its actual operating voltage；Empirical tests, by setting the threshold voltage of comparator, can be with
Its operation voltage is changed in the peak ranges less than low voltage signal, the operation voltage of comparator is adjusted to series IGBT
Operating voltage 24%~115%, scope is extremely wide and easy to adjust；
3rd, in resistance module, the resistance of switching i-th is carried out from semiconductor switch, so as to ensure quickly to change grid electricity
Hinder the overall resistance of module；
4th, in voltage acquisition module, equalizing resistance can play a part of to adjust quiescent voltage, and sampling resistor can be made
To collect the collection point of emitter voltage signal, equalizing resistance is in parallel with IGBT again after being in series with sampling resistor, so as to as IGBT
Static state voltage equipoise circuit arrangement, number of elements is few, saves the space of device installation；
5th, the collection emitter voltage signal that sampling resistor is obtained, the actual value to collection emitter voltage is directly proportional；And pass through selection
Equalizing resistance of the temperature drift less than 150ppm/ DEG C and sampling resistor are connected as static voltage sharing, can reduce temperature to adopting
The influence of sample result, improves the accuracy of collection emitter voltage signal acquisition；By selecting i-th threshold of the ripple amplitude less than 100mv
It is worth as the reference voltage of the i-th comparator, the accuracy of comparator operation voltage can be improved；Therefore to sum up, accurate sampling electricity
Pressure and accurately threshold value are obtained in that stable and accurate collection emitter voltage signal；
6th, voltage acquisition unit, comparator and driver high speed device respectively from time delay less than 150ns and 20ns,
The crest voltage of series IGBT can quickly be reduced.
Brief description of the drawings
Fig. 1 is voltage equalizing protection electrical block diagram of the present invention；
Fig. 2 is resistance modular structure schematic diagram of the present invention；
Fig. 3 is the voltage equalizing protection electrical block diagram of the embodiment of the present invention 1；
Fig. 4 is the circuit theory diagrams of the embodiment of the present invention 1；
In all of the figs, identical reference be used for represent identical element or structure, wherein：1- drive circuits,
2- control circuits, Q1- series IGBTs, R4- equalizing resistances, R3- sampling resistors, U1- voltage acquisition modules, U2- comparison modules,
U3- drive modules, U6- control modules.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The invention provides a kind of voltage equalizing protection circuit for series IGBT, for being obtained according to collection emitter voltage signal
Grid penetrate collecting voltage signal, as shown in figure 1, single including voltage acquisition module, N number of comparator, isolated location, control unit, driving
Unit and resistance module, N number of comparator be respectively first comparator, the second comparator ... to N comparators, N is
Natural number, preferably 1~3, as shown in Figure 1；The output end of the voltage acquisition module connects the i-th comparator, and described i-th compares
First output end of device connects the i-th input of resistance module, the second output end connection isolated location of first comparator
Input, the interaction end of the isolated location connects the interaction end of control unit, and output end connects the input of driver element,
The output end of the driver element connects the N+1 inputs of resistance module, and the output end of the resistance module is made
It is the output end of the voltage equalizing protection circuit, i is the arbitrary integer of 1~N；
The voltage acquisition module is used to obtain low voltage signal corresponding with emitter voltage signal is collected, the collection emitter-base bandgap grading electricity
The peak value of signal is pressed to be less than 10V, the peak value of the low voltage signal is 5V；
I-th comparator is used to be compared with the i-th threshold value by by the low voltage signal, by low-voltage letter
Number be converted to the i-th square-wave signal, i-th threshold value less than the low voltage signal peak value, when low voltage signal is more than the i-th threshold
During value, then the high level in the i-th square-wave signal is converted to, is otherwise converted to the low level in the i-th square-wave signal；When N >=2,
First threshold is incremented by successively to N threshold values；
The isolated location includes the first fiber optical transceiver and the second fiber optical transceiver that are connected with optical fiber, described first
The input of fiber optical transceiver as isolated location input, output end as isolated location output end, second light
Second interaction end of fine transceiver as the isolated location interaction end；The isolated location is used for control unit and first
Comparator and driver element are isolated；
Described control unit is used for according to the first square-wave signal, sends the drive signal of unipolarity, low amplitude value, the usual drive
The low level of dynamic signal is 0V, and high level is 3.3V or 5V；
The drive signal of unipolarity, low amplitude value is converted to the driver element drive signal of bipolarity, amplitude, is led to
The low level of the normal drive signal is -10V, and high level is 15V, and the driver element is additionally operable to isolated gate resistive mode simultaneously
Block and isolated location；
The voltage acquisition module is made up of equalizing resistance, sampling resistor and voltage acquisition unit；The equalizing resistance
First end be used to connect the first end of IGBT, the second end of the sampling resistor is used to connect second end of IGBT；It is described equal
Second end of piezoresistance connects the first end of the sampling resistor and the first end of voltage acquisition module, the sampling resistor
Second end connects the second end of voltage acquisition unit；The equalizing resistance is used to adjust the collection emitter voltage of IGBT, the sampling
Resistance is used to obtain collection emitter voltage signal corresponding with emitter voltage is collected, and the voltage acquisition unit is used for the collection emitter-base bandgap grading
Voltage signal is converted to low voltage signal, and the temperature drift of the equalizing resistance and sampling resistor is less than 150ppm/ DEG C, to protect
Under collection emitter voltage higher, temperature does not interfere with sampled result still to card；
The resistance module is used to send grid emitter voltage signal, institute according to drive signal and the i-th square-wave signal
Stating resistance module includes basic resistance, N number of driver, N number of resistance and N number of semiconductor switch, N number of driver point
Not Wei the first driver, the second driver ... to N drivers, N number of resistance be respectively first resistor, second resistance ...
To N resistance, N number of semiconductor switch be respectively the first semiconductor switch, the second semiconductor switch ... to N semiconductors
Switch；The input of i-th driver as the resistance module the i-th input, output end connect the i-th semiconductor
The control end of switch, the input of the basic resistance as the resistance module N+1 inputs, output end conduct
The output end of the resistance module, i-th resistance connects to form the i-th series circuit with the i-th semiconductor switch, and described
I series circuits are in parallel with tandem circuit to form resistance；
I-th driver is used for according to the i-th square-wave signal, obtains the i-th control signal, and i-th semiconductor switch is used
According to i-th control signal, conducting or the series circuit of disjunction i-th, so as to change grid electricity in the resistance module
The overall resistance of resistance, then changes grid emitter voltage signal；
The resistance of i-th resistance is less than basic resistance, and when N >=2, the resistance of first resistor to N resistance is successively
Increase；For example, as N=2, first threshold can be set to the 1/3~2/5 of the peak value of the low voltage signal, Second Threshold
Be set to the 2/3~4/5 of the peak value of the low voltage signal, by the resistance of first resistor be set to 1/4 times of second resistance~
1/2 times, the resistance of second resistance is set to 1/6 times~1/3 times of basic resistance；So, when the instantaneous value of low voltage signal
During more than Second Threshold, then the first semiconductor switch and the second semiconductor switch disjunction simultaneously, the overall resistance of resistance is
The resistance of basic resistance, so that resistance module gate voltage signal of the output with relatively weak driving force；When low electricity
The instantaneous value of signal is pressed to be located at when between first threshold and Second Threshold, the second semiconductor switch conducts, first switch semiconductor
Disjunction, the 1/7~1/4 of resistance based on the overall resistance of resistance module；When the instantaneous value of low voltage signal is less than
During first threshold, the first semiconductor switch and the second semiconductor switch conducts, resistance resistance based on the overall resistance of resistance
The 1/31~1/10 of value, so that resistance module gate voltage signal of the output with stronger driving force, as shown in Figure 2.
Wherein, high speed device of the voltage acquisition unit from time delay less than 150ns, the i-th comparator and the i-th driver are selected
High speed device with time delay less than 20ns, 200ns is less than with the overall time delay for ensureing voltage equalizing protection circuit.
Embodiment 1
Fig. 3 is the voltage equalizing protection circuit diagram made using the principle, and the circuit includes static voltage sharing, drives electricity
Road 1 and control circuit 2；Drive circuit 1 includes voltage acquisition module U1, comparison module U2, the first optical fiber receiver-transmitter module, driving
Module U3, resistance control module；The control circuit 2 includes the second optical fiber receiver-transmitter module and control module U6.
Fig. 4 is the circuit diagram of the present embodiment, and the series IGBT Q1 linked in the voltage equalizing protection is FZ800R33KF2C；Its
Rated voltage is 3300V, and rated current is 800A, and blocking resistance is 660K Ω, and real work voltage is 1250V, sets peak value
Voltage is 1500V；
Static voltage sharing is in parallel with series IGBT Q1, and static voltage sharing includes the equalizing resistance R4 of series connection and adopts
Sample resistance R3, equalizing resistance R4 are fixed resister RPH100V02502JB, and resistance is 25K Ω, and temperature drift is 150ppm/
DEG C, sampling resistor is fixed resister BSI06380R00DR19, and resistance is 80 Ω, and temperature drift is 100ppm/ DEG C, sampling electricity
Resistance is in parallel with voltage acquisition module U1.
Voltage acquisition module U1 uses high speed current differential amplifier AD8216, the collection emitter-base bandgap grading electricity that sampling resistor R3 is obtained
Pressure signal is converted to the low voltage signal of 0~5V, then transmits to comparison module U2, and the peak value of the collection emitter voltage signal is less than
10V。
Comparison module U2 uses High-Speed Double-Channel comparator MAX962, including first comparator B and the second comparator A,
The threshold voltage of the first threshold voltage used by first comparator B is 2V, then comparator operation voltage is 2/5 × 1500=
600V, is the 48% of the real work voltage of series IGBT, and output amplitude reaches resistance control for first square-wave signal of 5V
The first input end of the high-speed driver U4 of molding block and the receiving terminal of the first optical fiber receiver-transmitter module.Used by second comparator A
Second threshold voltage be 4V, then comparator operation voltage be 4/5 × 1500=1200V, be series IGBT real work electricity
The 96% of pressure, output amplitude reaches the second defeated of the high-speed driver U4 of resistance control module for second square-wave signal of 5V
Enter end.
The threshold voltage of comparison module can be adjusted according to the actual requirements, such as in the present embodiment, when threshold voltage is 1V
When, comparator operation voltage be 1/5 × 1500=300V, the 20% of real work voltage, then when threshold voltage be 4.8V when, than
It is 4.8/5 × 1500=1440V compared with device operation voltage, is the 115.2% of real work voltage.
The receiving terminal of the first optical fiber receiver-transmitter module uses high speed fibre receiver HFBR-2526 (C1), is connected by optical fiber
The output end HFBR-1527 (T1) of the second optical fiber receiver-transmitter module of circuit 2 is controlled, is used to transmit the first square wave signaling switch letter
Number；The output end of optical fiber receiver-transmitter module uses high speed fibre transmitter HFBR-1527 (T2), and connection control circuit 2 is connected by optical fiber
Optical fiber receiver-transmitter module receiving terminal HFBR-2526 (C2), for obtaining IGBT switching signals.Due to connecing for optical fiber receiver-transmitter module
Isolated by light between receiving end and transmitting terminal, therefore its insulation voltage is equal with the isolation voltage of power supply, this programme
Using the Switching Power Supply of 100KV isolation voltages, therefore can be applicable to 100KV scenes.Put down according to other other optocouplers, current potential
Shift circuit, because itself device isolation voltage is only up to 6.5KV, limits the use in hyperbaric environment.
Control module U6 uses DSP 28335, and the output end with the second optical fiber receiver-transmitter module is connected, and output single-pole is low
Amplitude, the IGBT switching signals without isolation, its low level is 0V, high level 5V.
Drive module U3 uses 1SC2060P, is used to the unipolarity that will be received, low amplitude value, the IGBT switching signals without isolation
Changed, acquisition bipolarity, amplitude, the IGBT switching signals of high isolation, its low level is -10V, and high level is 15V.
Resistance control module includes 5 Ohmic resistance R1,10 Ohmic resistance R2,40 Ohmic resistance R0, two-way at a high speed
The A roads of switch mosfet CSD88539ND (U4) and two-way high-speed driver UCC27523D (U5), 10 Ohmic resistances and MOSFET
Drain series, the drain series on the B roads of 5 Ohmic resistances and MOSFET are then jointly in parallel with 40 Ohmic resistances again, it is in parallel after
It is collectively forming resistance.The output end of the input connection drive module U3 of resistance, output end is connected to series IGBT
(Q1) control end；The output end on the A roads of high-speed driver connects the grid on the A roads of MOSFET, the grid of B roads MOSFET simultaneously
The output of connection B roads high-speed driver, the overall resistance size of resistance control module when being used to change switching process, from
And obtain grid corresponding with IGBT switching signals and penetrate collecting voltage signal.Therefore, when the low voltage signal of voltage acquisition module output
Instantaneous value be less than first threshold when, two-way high speed switch mosfet is in the conduction state, the actual resistance of resistance module
About 3.08 Ω；When the instantaneous value of the low voltage signal of voltage acquisition module output is less than Second Threshold higher than first threshold
When, the B roads disjunction of switch mosfet, A roads are held on, and now the actual resistance of resistance is 8 Ω；When low voltage signal
When instantaneous value is higher than Second Threshold, the two-way of high speed switch mosfet is in disjunction state, the actual resistance of resistance module
It is 40 Ω to be worth.
Because the propagation delay of the high speed current differential amplifier AD8216 chosen in the present embodiment is 120ns (± 8ns),
High-Speed Double-Channel comparator MAX962 propagation delays are 6.9ns (± 2ns), and two-way high-speed driver UCC27523D (U5) is propagated
Time delay be 10ns (± 2ns), therefore the voltage equalizing protection circuit overall time delay within 150ns；And the series connection of the present embodiment
The operating voltage of IGBT is 1250V, and its turn-off time is 1.5 μ s, by accurate sampling set emitter voltage, dynamic change series connection
The overall resistance of resistance control module when IGBT is turned off, effectively can penetrate the waveform of collecting voltage signal by control gate, reduce
Voltage crest value, while the excessive pressure damages risk in the whole work period can easily be reduced using switching sequence adjustment technology.Pass through
Optical fiber receiver-transmitter module transmits square-wave signal and IGBT switching signals, has widened the operating voltage range of IGBT, can apply
Hundred kilovolts of scenes.
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, it is not used to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc., all should include
Within protection scope of the present invention.
Claims (10)
1. a kind of voltage equalizing protection circuit for series IGBT, it is characterised in that including voltage acquisition module, the i-th comparator, control
Molding block and resistance module；Wherein, i is the integer of 1~N, and N is natural number；
I-th output end of the voltage acquisition module connects the i-th comparator, the first output end connection grid of i-th comparator
I-th input of electrode resistance module, the input of the second output end link control module of first comparator, the control module
Output end connect the N+1 inputs of resistance module, the output end of the resistance module is protected as the pressure
The output end of protection circuit；
The voltage acquisition module is used to obtain low voltage signal corresponding with emitter voltage signal is collected；
I-th comparator is used to be compared with the i-th threshold value by by the low voltage signal, and the low voltage signal is turned
It is changed to the i-th square-wave signal, peak value of i-th threshold value less than the low voltage signal；
The control module is used for according to the first square-wave signal, sends drive signal；
The resistance module is used for according to i-th control signal and drive signal, changes overall resistance, and obtain
The grid of IGBT penetrate collecting voltage signal.
2. voltage equalizing protection circuit according to claim 1, it is characterised in that N >=2, and first threshold to N threshold values successively
It is incremented by.
3. voltage equalizing protection circuit according to claim 2, it is characterised in that N=2, the first threshold is low-voltage letter
Number peak value 1/3~2/5, the Second Threshold for low voltage signal peak value 2/3~4/5.
4. voltage equalizing protection circuit according to claim 1, it is characterised in that the time delay of i-th comparator is less than 20ns.
5. voltage equalizing protection circuit according to claim 1, it is characterised in that the control module include control unit, every
From unit and driver element, the input of the isolated location as the control module input, interaction end connection control
The interaction end of unit processed, output end connects the input of driver element, and the output end of the driver element is used as the control mould
The output end of block；
Described control unit is used for according to the first square-wave signal, sends the drive signal of unipolarity, low amplitude value, the isolated location
For isolating control unit and first comparator, and for isolating control unit and drive module, the drive module is used for
Obtain bipolarity, the drive signal of amplitude.
6. voltage equalizing protection circuit according to claim 1, it is characterised in that the voltage acquisition module includes equal piezoelectricity
Resistance, sampling resistor and voltage acquisition unit, the first end of the equalizing resistance are used to connect the first end of IGBT, and the second end connects
Connect the first end of the sampling resistor and the first input end of voltage acquisition module, the second end connection electricity of the sampling resistor
The second input of acquisition module is pressed, and for connecting second end of IGBT；
The equalizing resistance is used to adjust the quiescent voltage of IGBT, and the sampling resistor is used to obtain collection emitter voltage signal, institute
Voltage acquisition unit is stated for collection emitter voltage signal to be converted into low voltage signal.
7. voltage equalizing protection circuit according to claim 6, it is characterised in that the temperature of the equalizing resistance and sampling resistor
Drift is less than 150ppm/ DEG C.
8. voltage equalizing protection circuit according to claim 1, it is characterised in that the resistance module includes basis electricity
Resistance, the i-th driver, the i-th resistance and the i-th semiconductor switch, i-th resistance connect to form the i-th string with the i-th semiconductor switch
Connection circuit, i-th series circuit is in parallel with basic resistance；The resistance of i-th resistance is less than basic resistance；Described i-th drives
The input of device is moved as the i-th input of the resistance module, output end connects the control end of the i-th semiconductor switch,
The input of the basic resistance as the resistance module N+1 inputs, output end is used as the resistance
The output end of module；
I-th driver is used for according to the i-th square-wave signal, obtains the i-th control signal, and i-th semiconductor switch is used for root
According to i-th control signal, turn on or the series circuit of disjunction i-th, so as to change the overall resistance of the resistance module.
9. voltage equalizing protection circuit according to claim 8, it is characterised in that N >=2, and first resistor is to the resistance of N resistance
Value is incremented by successively.
10. voltage equalizing protection circuit according to claim 9, it is characterised in that N=2, the resistance of the first resistor is the
The 1/4~1/2 of two resistance, the 1/6~1/3 of resistance based on the resistance of the second resistance.
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| CN108306254A (en) * | 2018-04-09 | 2018-07-20 | 广州金升阳科技有限公司 | A kind of isolation protective circuit and the Switching Power Supply comprising the circuit |
| CN110932582A (en) * | 2018-09-04 | 2020-03-27 | 株式会社东芝 | Switching device, power conversion device, control device, and recording medium |
| CN111464007A (en) * | 2020-05-13 | 2020-07-28 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
| CN111555260A (en) * | 2020-05-12 | 2020-08-18 | 盐城工学院 | New-framework photovoltaic submodule based on capacitor-free voltage equalizer |
| CN112019201A (en) * | 2020-08-27 | 2020-12-01 | 电子科技大学 | Gate current regulator of IGBT device |
| CN112491406A (en) * | 2020-11-26 | 2021-03-12 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
| CN115436693A (en) * | 2022-08-22 | 2022-12-06 | 中国科学院合肥物质科学研究院 | Voltage detection device and method for judging whether high voltage of input end exceeds preset value |
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| CN110932582A (en) * | 2018-09-04 | 2020-03-27 | 株式会社东芝 | Switching device, power conversion device, control device, and recording medium |
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| CN111555260A (en) * | 2020-05-12 | 2020-08-18 | 盐城工学院 | New-framework photovoltaic submodule based on capacitor-free voltage equalizer |
| CN111464007B (en) * | 2020-05-13 | 2022-05-24 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
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| CN112491406B (en) * | 2020-11-26 | 2023-07-25 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
| CN115436693A (en) * | 2022-08-22 | 2022-12-06 | 中国科学院合肥物质科学研究院 | Voltage detection device and method for judging whether high voltage of input end exceeds preset value |
| CN115436693B (en) * | 2022-08-22 | 2023-12-05 | 中国科学院合肥物质科学研究院 | Voltage detection device and method for judging whether high voltage of input end exceeds preset value |
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