CN209028498U - A kind of ESD protective system of low pressure difference linear voltage regulator - Google Patents
A kind of ESD protective system of low pressure difference linear voltage regulator Download PDFInfo
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- CN209028498U CN209028498U CN201821911569.3U CN201821911569U CN209028498U CN 209028498 U CN209028498 U CN 209028498U CN 201821911569 U CN201821911569 U CN 201821911569U CN 209028498 U CN209028498 U CN 209028498U
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Abstract
The utility model relates to a kind of ESD protective systems of low pressure difference linear voltage regulator, including low pressure difference linear voltage regulator LDO, I/O ESD protective module, VIN ESD protective module and VOUT ESD protective module, the VOUT ESD protective module further include energy-storage travelling wave tube CP, energy-storage travelling wave tube CPFor when out-put supply VOUT voltage increases and GND is zero, quickly opening NMOS tube N1, electric current reaches GND by NMOS tube N1.The utility model solves the ESD protective system of existing low pressure difference linear voltage regulator LDO; when power supply VOUT voltage increases or power supply VIN voltage increases; it is slow in the presence of releasing; the technical issues of causing component to burn out; ESD protective system provided by the utility model can release rapidly when supply voltage increases, and place component and burn out.
Description
Technical field
The utility model belongs to integrated circuit fields, and in particular to the ESD protective system of low pressure difference linear voltage regulator.
Background technique
The advanced consumer-elcetronics devices such as mobile phone, laptop and music player is battery powered portable to obtain
Property.In order to make the with better function of each electronic equipment, using system-on-chip designs become increasingly complex and highly integrated.
For these systems on chip, the quick response realized by various types of power converters, efficient and inexpensive power supply pipe
Reason is vital to obtain competitive advantage.Low pressure difference linear voltage regulator (LDO) is a kind of general power converter, is had
The advantages of low noise, low cost and quick response, it is widely used on the power management of system on chip.Traditional low pressure difference linearity
Voltage-stablizer (LDO) circuit is as shown in Figure 1, include LDO control module, input power VIN, out-put supply VOUT, PMOS tube P0.Its
The operation threshold of middle input power VIN is 2.5-6.5V；Out-put supply VOUT, operation threshold 0.9-5.5V；Control signal EN/
NR is the control signal of LDO, operation threshold 0-6.5V；P0 is LDO large scale output pmos, and LDO control module is in LDO
Portion's logic and control module.
Electrostatic protection is an important problem for the protection of integrated circuit.Since electrostatic charge is with relatively high
Voltage (may be several kilovolts), so needing ESD protective system to protect semiconductor devices and module from the damage of electrostatic charge
Evil.
The ESD protective system of low pressure difference linear voltage regulator LDO is as shown in Fig. 2, include low pressure difference linear voltage regulator LDO, I/O
ESD protective module, VIN ESD protective module and VOUT ESD protective module.Wherein I/O ESD protective module is input control letter
The ESD protective module of number EN and NR, including diode (D1-D4)；The ESD that VIN ESD protective module is input power VIN is protected
Module, including NMOS tube N2 and resistance R2；VOUT ESD protective module is the ESD protective module of out-put supply VOUT, including
NMOS tube N1, resistance R1 and diode D5.It controls signal EN and VIN is connected to by D1, GND is connected to by D3；It is logical to control signal NR
It crosses D2 and is connected to VIN, GND is connected to by D4；Input power VIN is connected to GND by large scale NMOS tube N2, and the grid of N2 passes through
R2 is connected to GND.The resistance value of R2 is at 1K ohm -10K ohm.Input power VOUT is connected to GND by large scale NMOS tube N1,
The grid of N1 is connected to GND by R1.VIN is also connected to by D5 simultaneously.The resistance value of R1 is at 1K ohm -10K ohm.
In use, the ESD protective system of existing this LDO is in the presence of there are two disadvantages:
1) access of releasing of VOUT+/GND- (GND=0V, VIN add positive esd pulse) is slow, and internal circuit is caused to damage,
It is specifically shown in Fig. 3.The trigger voltage of N1 is up to 10V.VOUT is increased, and is released by N1, but since N1 cut-in voltage is high, process of releasing
Slowly, internal component can be caused to burn out.
2) under the ESD mode of VIN+/VOUT- (VOUT=0V, VIN add positive esd pulse), ESD access of releasing is very poor,
As shown in Figure 4.ESD electric current first passes around N2 from VIN and reaches VSS, just reaches VOUT using N1.VIN is increased, and P0, which is in, to close
State, electric current are released by N2 and N1, and by two NMOS, process of releasing is slow, internal component can be caused to burn out.
Summary of the invention
In order to solve the ESD protective system of existing low pressure difference linear voltage regulator LDO, in the raising of power supply VOUT voltage or electricity
When source VIN voltage increases, the technical issues of existing and release slowly, component is caused to burn out, the utility model provides a kind of low pressure
The ESD protective system of difference linear constant voltage regulator, the system can release rapidly when supply voltage increases, and place component and burn out.
The technical solution of the utility model are as follows:
A kind of ESD protective system of low pressure difference linear voltage regulator, including low pressure difference linear voltage regulator LDO, I/O ESD protection
Module, VIN ESD protective module and VOUT ESD protective module, are characterized in that
The VOUT ESD protective module further includes energy-storage travelling wave tube CP, energy-storage travelling wave tube CPFor in out-put supply VOUT voltage
It increases and GND is when being zero, quickly open NMOS tube N1, electric current reaches GND by NMOS tube N1.
Further, the VOUT ESD protective module includes NMOS tube N1, resistance R1, diode D5 and energy-storage travelling wave tube
CP, the pole D of NMOS tube N1, the anode of diode D5 and energy-storage travelling wave tube CPOne end connect with out-put supply VOUT, energy-storage travelling wave tube
CPThe other end, NMOS tube N1 the pole G and resistance R1 one end connection, another termination GND of resistance R1.
Further, the energy-storage travelling wave tube CPFor capacitor.
Further, the energy-storage travelling wave tube CPIt is the PMOS tube that drain electrode is connected with source electrode.
Further, VIN ESD protective module further includes energy-storage travelling wave tube Cn, energy-storage travelling wave tube CnFor input power VIN's
When voltage increases and out-put supply VOUT is ground, PMOS tube P0 is quickly opened, electric current reaches VOUT by PMOS tube P0
Further, the VIN ESD protective module includes NMOS tube N2, resistance R2 and energy-storage travelling wave tube Cn, NMOS tube N2
The pole D meet input power VIN, the pole the S ground connection of NMOS tube N2, one end of the pole the G connecting resistance R2 of NMOS tube N2, resistance R2's is another
Terminate GND；Energy-storage travelling wave tube CnOne end connect with the pole G of one end of LDO control module, PMOS tube P0, energy-storage travelling wave tube CnIt is another
Terminate out-put supply VOUT.
Further, energy-storage travelling wave tube Cn is capacitor.
Further, energy-storage travelling wave tube Cn is the NMOS tube that drain electrode is connected with source electrode.
The utility model possessed the utility model has the advantages that
The utility model is by increasing energy-storage travelling wave tube Cp, or P0's between the grid of N1 and out-put supply VOUT
Between grid and out-put supply VOUT, increase an energy-storage travelling wave tube Cn, ESD electric current is released rapidly when supply voltage increases
Fall, component is avoided to burn out, save the cost.
Detailed description of the invention
Fig. 1 is traditional LDO circuit schematic diagram；
Fig. 2 is that traditional LDOESD protects system；
Fig. 3 is the ESD current path of VOUT+/GND- mode；
Fig. 4 is the ESD current path of VIN+/VOUT- mode；
Fig. 5 is the utility model LDO ESD protective system；
Fig. 6 is the ESD current path that the utility model protects system VIN+/VOUT- mode.
Specific embodiment
Embodiment 1: as shown in figure 5, between the grid (node g1) and out-put supply VOUT of N1, increase a PMOS electricity
Hold Cp or capacitor.Specifically: VOUT ESD protective module includes NMOS tube N1, resistance R1, diode D5 and energy-storage travelling wave tube CP,
One end of the pole D of NMOS tube N1, the anode of diode D5 and energy-storage travelling wave tube is connect with out-put supply VOUT, energy-storage travelling wave tube CP's
One end of the other end, the pole G of NMOS tube N1 and resistance R1 connects, another termination GND of resistance R1.Energy-storage travelling wave tube CP: capacitor
Or the PMOS tube that drain electrode is connected with source electrode.
Capacitor C is addedP, when VOUT is increased, GND is zero, capacitor CPSo that N1 is quickly opened, electric current reaches GND by N1.
Embodiment 2: (between node g) and out-put supply VOUT, increase a NMOS capacitor Cn or electricity in the grid of P0
Hold.Specifically: VIN ESD protective module includes NMOS tube N2, resistance R2 and energy-storage travelling wave tube Cn, the pole D of NMOS tube N2 connects input
The pole S of power supply VIN, NMOS tube N2 are grounded, one end of the pole the G connecting resistance R2 of NMOS tube N2, another termination GND of resistance R2；Storage
It can element CnOne end connect with the pole G of one end of LDO control module, PMOS tube P0, energy-storage travelling wave tube CnAnother termination export electricity
Source VOUT.Energy-storage travelling wave tube Cn: capacitor or the NMOS tube that is connected with source electrode of drain electrode.
Capacitor C is addedn, when VIN is increased, VOUT is ground, capacitor CnSo that P0 is quickly opened, electric current is reached by P0
VOUT。
Embodiment 3: (between node g) and VOUT, increase a PMOS capacitor Cp in the grid of N1.In VOUT+/GND-
When esd event, GND=0V, VOUT rapid increase, due to the presence of Cp, N1 gate voltage starts to be followed by VOUT variation, so N1
Pipe is opened rapidly.ESD electric current flows to GND by N1 from VOUT.The ESD trigger voltage of N1 drops to 7V from original 10V.
Embodiment 4: as shown in fig. 6, the grid in P0 (between node g) and VOUT, increases a NMOS capacitor Cn.?
When VIN+/VOUT-ESD event, VOUT=0V, VIN rapid increase, due to the presence of Cn, P0 gate voltage and VOUT voltage connect very much
Closely, so P0 pipe is connected, most of ESD electric current flows to VOUT by P0 from VIN.Most of electric current passes through P0 (i2), fraction
Electric current passes through N2 and N1 (i1).
Claims (8)
1. a kind of ESD protective system of low pressure difference linear voltage regulator, including low pressure difference linear voltage regulator LDO, I/O ESD protect mould
Block, VIN ESD protective module and VOUT ESD protective module, it is characterised in that:
The VOUT ESD protective module further includes energy-storage travelling wave tube CP, energy-storage travelling wave tube CPFor being increased in out-put supply VOUT voltage
And GND quickly opens NMOS tube N1 when being zero, electric current reaches GND by NMOS tube N1.
2. the ESD protective system of low pressure difference linear voltage regulator according to claim 1, it is characterised in that: the VOUT
ESD protective module includes NMOS tube N1, resistance R1, diode D5 and energy-storage travelling wave tube CP, the pole D of NMOS tube N1, diode D5
Anode and energy-storage travelling wave tube CPOne end connect with out-put supply VOUT, energy-storage travelling wave tube CPThe other end, NMOS tube N1 the pole G with
And one end connection of resistance R1, another termination GND of resistance R1.
3. the ESD protective system of low pressure difference linear voltage regulator according to claim 1 or 2, it is characterised in that: the energy storage
Element CPFor capacitor.
4. the ESD protective system of low pressure difference linear voltage regulator according to claim 1 or 2, it is characterised in that: the energy storage
Element CPIt is the PMOS tube that drain electrode is connected with source electrode.
5. the ESD protective system of low pressure difference linear voltage regulator according to claim 1, it is characterised in that: VIN ESD protection
Module further includes energy-storage travelling wave tube Cn, energy-storage travelling wave tube CnIt is increased for the voltage in input power VIN and out-put supply VOUT is ground
When, PMOS tube P0 is quickly opened, electric current reaches VOUT by PMOS tube P0.
6. the ESD protective system of low pressure difference linear voltage regulator according to claim 5, it is characterised in that: the VIN ESD
Protective module includes NMOS tube N2, resistance R2 and energy-storage travelling wave tube Cn, the pole D of NMOS tube N2 meets input power VIN, NMOS tube N2's
The pole S ground connection, one end of the pole the G connecting resistance R2 of NMOS tube N2, another termination GND of resistance R2；Energy-storage travelling wave tube CnOne end and LDO
The pole the G connection of one end, PMOS tube P0 of control module, energy-storage travelling wave tube CnAnother termination out-put supply VOUT.
7. the ESD protective system of low pressure difference linear voltage regulator according to claim 5 or 6, it is characterised in that: energy-storage travelling wave tube
Cn is capacitor.
8. the ESD protective system of low pressure difference linear voltage regulator according to claim 5 or 6, it is characterised in that: energy-storage travelling wave tube
Cn is the NMOS tube that drain electrode is connected with source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821911569.3U CN209028498U (en) | 2018-11-20 | 2018-11-20 | A kind of ESD protective system of low pressure difference linear voltage regulator |
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| CN201821911569.3U CN209028498U (en) | 2018-11-20 | 2018-11-20 | A kind of ESD protective system of low pressure difference linear voltage regulator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109407748A (en) * | 2018-11-20 | 2019-03-01 | 深圳讯达微电子科技有限公司 | A kind of ESD protective system of low pressure difference linear voltage regulator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109407748A (en) * | 2018-11-20 | 2019-03-01 | 深圳讯达微电子科技有限公司 | A kind of ESD protective system of low pressure difference linear voltage regulator |
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