CN208819865U - Switching tube and its chip assembly - Google Patents
Switching tube and its chip assembly Download PDFInfo
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- CN208819865U CN208819865U CN201821335101.4U CN201821335101U CN208819865U CN 208819865 U CN208819865 U CN 208819865U CN 201821335101 U CN201821335101 U CN 201821335101U CN 208819865 U CN208819865 U CN 208819865U
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- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
- H01L2224/251—Disposition
- H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
This application discloses a kind of switching tube and its chip assemblies, the chip assembly includes: packaging body, chip and metal layer, wherein chip buried in packaging body, including chip body and the pin being electrically connected with chip body, pin extends to outside packaging body from the chip body；Metal layer is arranged in side of the packaging body far from pin, and with the thermally conductive connection of chip body, for being chip cooling.In the side of packaging body, metal layer is set, and by metal layer and the thermally conductive connection of chip, the heat that chip operation generates leads to heat transfer and then passes to metal layer, it is radiated using metal layer, additional radiator is arranged due to being not required in chip assembly in the application, thus the small volume of chip assembly and practical.
Description
Technical field
This application involves flush type chip technology fields, more particularly to a kind of switching tube and its chip assembly.
Background technique
Volume of the flush type chip due to can significantly reduce integrated circuit board, causes widely to grind in recent years
Study carefully.
Flush type chip often needs to radiate by radiator at present, and heat dissipation gear piece or heat dissipation can be used for example
The mode of tubule radiates to chip.Installing radiator additional on chip assembly will increase the volume of chip assembly, be unfavorable for
The miniaturization of chip assembly.
Utility model content
The application provides a kind of switching tube and its chip assembly, is able to solve the heat dissipation problem of existing flush type chip.
In order to solve the above technical problems, the technical solution that the application uses is: providing a kind of chip assembly, the core
Piece component includes: packaging body；Chip is embedded in the packaging body, including chip body and is electrically connected with the chip body
Pin, the pin extends to outside the packaging body from the chip body；Metal layer is arranged in the packaging body far from institute
State the side of pin, and with the thermally conductive connection of the chip body, for being the chip cooling.
In order to solve the above technical problems, another technical solution that the application uses is: a kind of switching tube is provided, it is described to open
Closing pipe includes chip assembly as previously described.
Metal layer is arranged in the side of packaging body in the embodiment of the present application, and by metal layer and the thermally conductive connection of chip, chip work
Make the heat generated to lead to heat transfer and then pass to metal layer, be radiated using metal layer.Core in the embodiment of the present application
Additional radiator is arranged due to being not required in piece component, thus the small volume of chip assembly and practical.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the schematic perspective view of the first embodiment of the application chip assembly；
Fig. 2 is the schematic cross-sectional view of chip assembly in Fig. 1；
Fig. 3 is the schematic cross-sectional view of the second embodiment of the application chip assembly；
Fig. 4 is the schematic cross-sectional view of the 3rd embodiment of the application chip assembly；
Fig. 5 is the flow diagram of the production method of chip assembly in one embodiment of the application；
Fig. 6 is the production method flow diagram of an embodiment of chip assembly in Fig. 2；
Fig. 7 to Figure 10 is the process flow chart of corresponding production method shown in fig. 6；
Figure 11 is the flow diagram of one embodiment of forming method of pin in Fig. 2；
Figure 12 is the flow diagram of another embodiment of forming method of pin in Fig. 2；
Figure 13 is the production method flow diagram of another embodiment of chip assembly in Fig. 2；
Figure 14 to Figure 16 and Fig. 2 is the process flow chart of production method shown in corresponding diagram 13；
Figure 17 is the production method flow diagram of chip assembly in Fig. 3；
Figure 18 is the flow diagram that metal layer and heat-conducting layer are led to hot linked production method in Fig. 3；
Figure 19 is the flow diagram that metal layer and heat-conducting layer are led to hot linked production method in Fig. 4.
Specific embodiment
With reference to the accompanying drawings and examples, the application is described in further detail.It is emphasized that following implement
Example is merely to illustrate the application, but is not defined to scope of the present application.Likewise, following embodiment is only the portion of the application
Point embodiment and not all embodiments, institute obtained by those of ordinary skill in the art without making creative efforts
There are other embodiments, shall fall in the protection scope of this application.
Term " first ", " second " in the application are used for description purposes only, and are not understood to indicate or imply opposite
Importance or the quantity for implicitly indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be bright
Show or implicitly include at least one this feature.In the description of the present application, the meaning of " plurality " is at least two, such as two
It is a, three etc., unless otherwise specifically defined.The directional instruction of institute in the embodiment of the present application (such as upper and lower, left,
It is right, forward and backward ...) be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.In addition, term
" comprising " and " having " and their any deformations, it is intended that cover and non-exclusive include.Such as contain series of steps
Or unit process, method, be not limited to listed step or unit, but optionally further comprising the step of not listing
Or unit, or optionally further comprising for these process, methods, intrinsic other step or units.
Referenced herein " embodiment " is it is meant that a particular feature, structure, or characteristic described can wrap in conjunction with the embodiments
It is contained at least one embodiment of the application.Each position in the description occur the phrase might not each mean it is identical
Embodiment, nor the independent or alternative embodiment with other embodiments mutual exclusion.Those skilled in the art explicitly and
Implicitly understand, embodiment described herein can be combined with other embodiments.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the schematic perspective view of the first embodiment of the application chip assembly, and Fig. 2 is
The schematic cross-sectional view of chip assembly in Fig. 1.
On the one hand the application provides a kind of chip assembly 100, as depicted in figs. 1 and 2, the chip assembly in the present embodiment
100 generally may include packaging body 10, chip 20 and metal layer 30.Wherein, chip 20 is embedded in packaging body 10, metal layer 30
Be arranged outside packaging body 10, and with the thermally conductive connection of chip 20, for for chip 20 radiate.
Wherein, packaging body 10 can be substrate made of insulating materials, and chip 20 is embedded in a substrate.The insulating materials can
Think that epoxy resin, polyimides, Bismaleimide Triazine, polyphenylene oxide, polytetrafluoroethylene (PTFE), phenylpropyl alcohol ring fourth are dilute etc..
Packaging body 10 can also be printed circuit board, be stacked gradually by multiple core plates.The core plate can be single side core
Plate or two-sided core plate, and line pattern is formed on the surface of core plate.
As shown in Fig. 2, in the present embodiment, chip 20 includes chip body 22 and the pin being electrically connected with chip body 22
24.Chip body 22 is located in packaging body 10, and pin 24 extends to the outside of packaging body 10 from chip body 22.
In the present embodiment, chip 20 is MOS chip.MOS chip is due to that can replace traditional High-power Semiconductor Triode
For in amplifying circuit or switching circuit, thus it is widely used in high definition, liquid crystal, in plasm TV.
MOS chip in the present embodiment uses Metal Substrate as substrate, to carry out hot transmitting.And it is punched in Metal Substrate
When, product yield can be promoted to avoid cracking.
Certainly, in other embodiments, which can also be other types of chip, and the application is not done specifically herein
It limits.
As shown in Fig. 2, chip 20 includes multiple pins 24, each pin 24 is electrically connected with chip body 22, and multiple
Pin 24 is respectively positioned on the side of chip body 22, so that metal layer 30 is arranged in the side opposite with pin 24 of chip body 22.
Certainly, in other embodiments, the quantity of the pin 24 of chip 20 and position can also be arranged according to the actual situation.But it is general
In the case of, pin 24 is not provided with that the side of metal layer 30 is arranged in packaging body 10.
Wherein, pin 24 is also leading-out terminal, for chip body 22 to be connect with external circuit.Pin 24 can be to lead
The form of electric hole or conductive column.
In one embodiment, pin 24 can be conductive hole.Specifically, the side of pin 24 is set in packaging body 10
Connecting hole is opened up, which is through to chip body 22 by the surface of packaging body 10.And the electroplated metal layer in connecting hole, electricity
Metal cladding is electrically connected with chip body 22, to form the pin 24 of conductive well format.The pin 24 is connect with chip body 22,
And extend to outside packaging body 10, for being connect with external circuit.
In the present embodiment, as shown in Fig. 2, pin 24 can be conductive column.In packaging body 10, the side of pin 24 is set
Connecting hole is opened up, which is through to chip body 22 by the surface of packaging body 10.And conductive column is set in connecting hole, it leads
One end of electric column and chip body 22 are welded, and other end stretches out the surface of packaging body 10, for connecting with external circuit.
The material for being used to form conductive column can be metal or alloy, which has conducting function, from
And chip body 22 can be electrically connected with external circuit.For example, the material of the conductive column be specifically as follows copper, copper alloy, aluminium,
Aluminium alloy, iron, ferroalloy, nickel, nickel alloy, gold, billon, silver, silver alloy, chromium, evanohm, magnesium, magnesium alloy, tungsten, tungsten alloy,
Molybdenum, molybdenum alloy, tin, tin alloy etc..The application to the material of the conductive column with no restriction.In the present embodiment, since copper has
Good electric conductivity, and the advantage of lower cost of copper, thus copper is selected to make conductive column.
Please continue to refer to Fig. 1 and Fig. 2, signals layer 60 is additionally provided on the surface that pin 24 is arranged in packaging body 10.Signal
Layer 60 includes multiple pads 62, and each pad 62 is electrically connected with corresponding pin 24.Due to pin 24 surface area relatively
It is small, the pad 62 for the larger area being electrically connected with pin 24 is set, outer member is connect with pad 62, outside both may be implemented
Element is electrically connected with pin 24, while biggish bonding area can also be improved the stability of welding.
Please continue to refer to Fig. 2, in the present embodiment, side of the packaging body 10 far from pin 24 is arranged in metal layer 30, i.e.,
It is located at the opposite sides of packaging body 10 with pin 24.Chip assembly 100 further includes heat-conducting piece 50, the heat-conducting piece 50 respectively with chip
Main body 22 and the contact of metal layer 30 and thermally conductive connection, thus by the heat transfer in chip body 22 to metal layer 30.
Wherein, heat-conducting piece 50 can be heating column.In the present embodiment, heating column is preferable using thermal conductivity, and cost is relatively low
Copper be made.Certainly, in other embodiments, can also be made of other metal or alloys, the embodiment of the present application
It is not specifically limited.
Further, as shown in Fig. 2, being additionally provided with heat-conducting layer 28 close to the side of metal layer 30 in chip body 22.?
In the present embodiment, metal layer 30 and the thermally conductive connection of chip body 22 are actually thermally conductive with the heat-conducting layer 28 in chip body 22
Connection.
Specifically, chip body 22 generate heat transfer to heat-conducting layer 28, heat-conducting layer 28 transfer heat in turn and
Connected metal layer 30, to radiate for chip body 22.
Wherein, heat-conducting layer 28 is made by the excellent metal or alloy of heating conduction.In chip body 22 close to gold
Heat-conducting layer 28 is arranged in the side for belonging to layer 30, and the even heat of chip body 22 can be passed to heat-conducting piece 50 by heat-conducting layer 28,
With improving radiating effect.
Wherein, heat-conducting piece 50 can arrange in matrix type, and heat-conducting piece 50 is formed by the area of matrix less than heat-conducting layer
28 area, so that heat-conducting piece 50 is entirely located between metal layer 30 and heat-conducting layer 28, and metal layer 30 and heat-conducting layer 28 is equal
Even connection, to be 20 Homogeneouslly-radiating of chip.
As shown in Fig. 2, in the present embodiment, the quantity of heat-conducting piece 50 is three, and three heat-conducting pieces 50 are evenly distributed on envelope
On the contact surface for filling body 10 and heat-conducting layer 28.
Certainly, in other embodiments, the quantity of heat-conducting piece 50 can also be one, and a heat-conducting piece 50 is located at packaging body
10 with the center position of the contact surface of heat-conducting layer 28.
In above embodiments, heat-conducting piece 50 is evenly distributed on the contact surface of packaging body 10 and heat-conducting layer 28.Certainly, thermally conductive
Part 50 may be located in chip body 22 at the higher position of heat, preferentially to dissipate at heat higher position on chip 20
Heat prevents local temperature excessively high and damages chip 20.
In another embodiment, as shown in figure 3, Fig. 3 is the sectional structure of the second embodiment of the application chip assembly
Schematic diagram.The chip assembly 200 of the present embodiment and chip assembly 100 shown in Fig. 2 the difference is that: in the present embodiment
Heat-conducting piece 250 is arranged in via hole 240, and via hole 240 runs through metal layer 230 and partial encapsulation body 210, and exposes heat-conducting layer
228.Heat-conducting piece 250 is connect with chip body 222 and metal layer 230 respectively, by the heat transfer in chip body 222 to gold
Belong to layer 230.
Wherein, via hole 240 is through to heat-conducting layer 228, and heat-conducting layer 228 can be prevented for example, by the side such as laser drill
When formula forms via hole 240, burn or breakdown chip body 220.
Further, via hole 240 can arrange in matrix, and the area of the matrix of the formation of via hole 240 is less than thermally conductive
The area of layer 228 prevents damage chip body 220 to protect chip body 220.
In the present embodiment, heat-conducting piece 250 can be heating column.One end of heating column is connect with heat-conducting layer 228, the other end
It is connect with metal layer 230.
Heat-conducting piece 250 can also be thermally conductive articulamentum.Can by via hole 240 plating metal with formed respectively with
The thermally conductive articulamentum that heat-conducting layer 228 and metal layer 230 connect, thus by heat-conducting layer 228 and the thermally conductive connection of metal layer 230.
The present embodiment is advantageous in that relative to a upper embodiment, and in the present embodiment, heat-conducting piece 250 can complete chip
It is formed after 220 encapsulation, thus manufacture craft is simpler.
Referring to Fig. 4, Fig. 4 is the schematic cross-sectional view of the 3rd embodiment of the application chip assembly.As shown in figure 4,
Chip assembly 300 in the present embodiment generally may include packaging body 310, chip 320, metal layer 330 and heat dissipating layer 360.
Wherein, chip 320 is embedded in packaging body 310, and the setting of metal layer 330 is outer in packaging body 310 and leads with chip 320
Be thermally connected, heat dissipating layer 360 is arranged in side of the metal layer 330 far from packaging body 310, and with the thermally conductive connection of chip 320.Heat dissipating layer
360 for increasing the contact area of metal layer 330 Yu air, to accelerate to radiate.
The material of packaging body 310 is identical as the material of packaging body 10 in first embodiment, and details are not described herein again.
The structure and function of chip body 322 and its pin 324 and 24 phase of previously described chip body 22 and pin
Together, details are not described herein again.
Side of the packaging body 310 far from pin 324 is arranged in metal layer 330, i.e., is located at packaging body 310 with pin 324
Opposite sides.The via hole 340 of metal layer 330 and partial encapsulation body 310, via hole 340 are formed through on metal layer 330
Expose heat-conducting layer 328.Heat-conducting piece 350 is arranged in via hole 340, by heat-conducting layer 328 and the thermally conductive connection of metal layer 330.At this
In embodiment, the quantity and setting position of via hole 340 and heat-conducting piece 350 can be with previously described via hole 40 and heat-conducting pieces
50 quantity and setting position are identical, and details are not described herein again.
It is formed with heat dissipating layer 360 far from the side of packaging body 310 in metal layer 330, which is completely covered metal
Layer 330, and connect with heat-conducting piece 350.In the present embodiment, as shown in figure 4, heat dissipating layer 360 and the heat-conducting piece in via hole 340
350 are integrally formed.The advantages of this arrangement are as follows simple process, and can effectively increase the contact surface of metal layer 330 Yu air
Product, to accelerate to radiate.
Heat dissipating layer 360 and the material of metal layer 330 can be the same or different, and the application is without limitation.In this implementation
In example, since copper has preferable heating conduction, thus metal layer 330 and heat dissipating layer 360 are made using copper.
Described above is the various structures of chip assembly, the production side of the chip assembly of various structures described below
Method.
Referring to Fig. 5, Fig. 5 is the flow diagram of the production method of chip assembly in one embodiment of the application.This implementation
Example chip assembly production method the following steps are included:
S10: a substrate is provided, is provided with an installation space on substrate.
Wherein, substrate is insulating substrate, be used to form the insulating substrate material can for epoxy resin, polyimides,
Bismaleimide Triazine, polyphenylene oxide, polytetrafluoroethylene (PTFE), phenylpropyl alcohol ring fourth are dilute etc..Substrate in the present embodiment is semi-solid preparation chip base
Plate, which has viscosity under certain condition (such as high temperature and pressure), and can be fully cured after treatment, in the present embodiment
Substrate be substrate of the prepreg after processing is fully cured.
Substrate can also be printed circuit board, be stacked gradually by multi-layer coreboard and the articulamentum between adjacent core plate
It suppresses.
The size of installation space can be depending on the size of the chip of required embedment.Under normal conditions, installation space is set
Size be greater than chip size.Specifically, size of the installation space on the thickness direction of substrate can be greater than the size of chip,
In this way in subsequent processing, substrate can form chip and protect, and reduce the pressure that chip is subject to during processing.Installation is empty
Between size on the direction vertical with the thickness direction of substrate can be greater than the size of chip, be accurately embedded to convenient for chip without any damage
In installation space.
S20: a chip is provided, chip includes chip body and heat-conducting layer.
Wherein, chip body and the structure of heat-conducting layer please refer to the description in above-described embodiment, and details are not described herein again.
S30: providing heat-conducting piece, and heat-conducting piece and heat-conducting layer are deviated to the thermally conductive connection in side of chip body.
In the present embodiment, heat-conducting piece can be heating column, and the material and structure of heating column please refer to described previously.It is thermally conductive
Column can be welded on heat-conducting layer by tin cream etc., can also be bonded on heat-conducting layer using heat-conducting glue, the embodiment of the present application is not
It is specifically limited.
S40: chip is placed in installation space.
Wherein it is possible to it is for example, by adhesives such as glue or tin creams that chip is fixed in the installation space, in order to avoid
Chip moves during following process.
S50: insulating layer being arranged in the installation space, and carries out hot pressing to substrate and insulating layer, to form packaging body, encapsulation
Body coating chip, and exposed portion heat-conducting piece.
Insulating layer uses insulation and (such as high temperature and pressure) has sticking material under certain condition.Such as epoxy resin
Series material, poly- milling imines series material.In the present embodiment, select epoxy resin prepreg as insulating layer, it should be partly solid
It is untreated to change piece, can melt under conditions of high temperature and pressure.In the installation space by insulating layer filling, and chip is placed
Between in a insulating layer.Hot-pressing processing is carried out to substrate and insulating layer, so that being filled in the installation space of substrate after insulation melting layer
In, so that packaging body be collectively formed with substrate.
S60: metal layer is set close to the side of heat-conducting layer in packaging body, and by metal layer and the thermally conductive connection of heat-conducting piece.
Wherein, metal layer can be using metal materials and its alloys such as copper, silver, aluminium.The metal layer should have good
Heating conduction, it is electrically conductive can also be non-conductive, the application is not specifically limited.
Packaging body close to heat-conducting layer side setting metal layer mode include following two:
The first metal layer set-up mode:
The metal layer on packaging body is formed by the modes such as being electroplated, coating close to the side of heat-conducting layer in packaging body.
Second of metal layer set-up mode:
Adhesive layer is set between side and metal layer of the packaging body close to heat-conducting layer, and by way of hot pressing, it will be golden
Belong to layer to be pressed together on packaging body.
It is the overall production method for introducing chip assembly above.It is introduced below for the chip assembly of each structure
Production method.Its production method is introduced first against chip assembly shown in Fig. 2.
Forming chip assembly 100 shown in Fig. 2 may include two ways, will carry out below to two kinds of production methods detailed
Explanation.
First way: please referring to Fig. 6 to Figure 10, and Fig. 6 is the production method process of an embodiment of chip assembly in Fig. 2
Schematic diagram.Fig. 7 to Figure 10 and Fig. 2 is the process flow chart of corresponding production method shown in fig. 6.The insulating layer packet of the present embodiment
Include the first insulating layer and second insulating layer, production method the following steps are included:
S110: a substrate 110 with through slot 112 is provided.
One substrate 110 is provided, and opens up a through slot 112 on substrate 110.The material of substrate 110 is with before in the present embodiment
The material of substrate described in text is identical, please refers to previously described substrate.
As shown in fig. 7, in the present embodiment, can be opened up on substrate 110 through substrate by the way of mechanical hole fabrication
110 through slot 112, and the size of through slot 112 should be greater than the size of chip 20.Specifically, it is referred to previously described installation
The size in space, details are not described herein again.
S120: glue 120 is posted in the side of substrate 110, glue 120 covers through slot 112.
Wherein, glue 120 can use OCA (Optically Clear Adhesive, transparent optical alite paste) light
Adhesive tape is learned, DAF (Die Attach Film, bonding die film) film etc. has the element of cementability.
In the present embodiment, as shown in figure 8, the area of glue 120 is equal to the surface that glue 120 is arranged in substrate 110
Area so that through slot 112 is completely covered in glue 120.In the present embodiment, the glue 120 that large area is arranged can increase
It is strong to paste dynamics, to improve the stationarity of chip 20.
S130: providing a chip 20, and chip 20 includes chip body 22 and heat-conducting layer 28.
S140: providing heat-conducting piece 50, and heat-conducting piece 50 and heat-conducting layer 28 are deviated to the thermally conductive connection in side of chip body 22.
S150: chip 20 is placed in through slot 112, and chip 20 is attached on glue 120.
As shown in figure 9, chip body 22 is pasted on glue 120 far from the side of heat-conducting layer 28.The present embodiment, can
The sidewall spacers of chip 20 and through slot 112 are arranged, and chip 20 can be further placed on to the center of through slot 112, with
In subsequent filling insulating layer, insulating layer can be completely filled in the outside of chip 20, improve filling quality.
S160: the first insulating layer 130 is set in through slot 112.
In the present embodiment, the material of the first insulating layer 130 is identical as the material of previously described insulating layer, herein no longer
It repeats.As shown in Figure 10, the first insulating layer 130 is filled in through slot 112.To substrate 110, chip 20 and the first insulating layer
130 carry out hot pressing, so that the first insulating layer 130 is full of between the inner wall of through slot 112 and the outer wall of chip 20 after melting.
S170: removing glue 120, and second insulating layer 140 be arranged in the side that substrate 110 removes glue 120, right
First insulating layer 130, second insulating layer 140 and substrate 110 carry out hot pressing, to form packaging body 10,10 coating chip of packaging body
20, and exposed portion heat-conducting piece 50.
Wherein, the material of second insulating layer 140 is identical as the material of previously described first insulating layer 130, herein no longer
It repeats.Substrate 110, the first insulating layer of part 130 in through slot 112 and positioned at the part of 110 opposite sides of substrate
One insulating layer 130 and second insulating layer 140 after undergoing hot pressing, form the packaging body 10 of coating chip 20.
S180: metal layer 30 is set close to the side of heat-conducting layer 28 in packaging body 10, and by metal layer 30 and heat-conducting piece 50
Thermally conductive connection.
Can be in the Heat Conduction Materials such as coated with thermally conductive glue or tin cream on the contact surface of metal layer 30 and heat-conducting piece 50, and pass through
Heat Conduction Material is by metal layer 30 and the thermally conductive connection of heat-conducting piece 50.
Further, as shown in Figure 2 and Figure 6, the thermally conductive connection of metal layer 30 and heat-conducting piece 50 is followed by executed into following step
It is rapid:
S190: the pin 24 being electrically connected with chip body 22 is set far from the side of heat-conducting layer 28 in packaging body 10.
Wherein, pin can be conductive column or conductive hole, different according to the form of pin, can have following two to be formed
The method of pin:
Figure 11 is please referred to, the first 24 generation type of pin:
S191a: connecting hole is opened up far from the side of heat-conducting layer 28 in packaging body 10, connecting hole leaks out chip body 22.
Specifically, connecting hole can be opened up far from the side of heat-conducting layer 28 in packaging body 10 by the way of laser boring,
The quantity of connecting hole and setting position can need the quantity for the pin being arranged and position to be configured according to chip, this Shen
It please be not specifically limited.
S192a: being arranged conductive column in connecting hole, and conductive column is electrically connected with chip body 22, to be formed in the form of conductive column
Pin 24.
Specifically, conductive column can be made of an electrically conducting material, and the application is not specifically limited.One end of conductive column and chip
Main body 22 is electrically connected, and the other end stretches out outside packaging body 10, for connecting with external circuit.The cross-sectional area of conductive column should be slightly larger
In or equal to connecting hole cross-sectional area so that conductive column can be fitted close with connecting hole, so that stable connection.
Figure 12 is please referred to, second of 24 generation type of pin:
S191b: connecting hole is opened up far from the side of heat-conducting layer 28 in packaging body 10, connecting hole leaks out chip body 22.
S192b: the electroplated metal layer in connecting hole, electroplated metal layer are electrically connected with chip body 22, to form conductive hole
The pin 24 of form.
Wherein, electroplated metal layer can be made of an electrically conducting material, and the application is not specifically limited.
Further, as shown in Figure 2 and Figure 6, after forming pin 24, following steps are then executed:
S200: setting includes the signals layer 60 of multiple pads 62 on the surface that pin 24 is arranged in packaging body 10, and will draw
Foot 24 is electrically connected with corresponding pad 62.
Specifically, can packaging body 10 be arranged pin 24 surface on electroplated metal layer, then metal layer is lost
It carves and forms the signals layer 60 including multiple pads 62.Again punching or conductive connecting by way of by each pin 24 with it is right
The pad 62 answered is electrically connected, and to increase the bonding area of pin 24, enhances connective stability.
It is the technical process for being made chip assembly 100 of the substrate 110 with through slot 112 above, is explained below and adopts
With the process flow of the substrate manufacture chip assembly 100 with blind slot.
The second way:
Figure 13 to Figure 16 is please referred to, Figure 13 is the production method flow diagram of another embodiment of chip assembly in Fig. 2.
Figure 14 to Figure 16 and Fig. 2 is the process flow chart of production method shown in corresponding diagram 13.Its production method the following steps are included:
S210: a substrate 110 with blind slot 114 is provided.
The material of substrate 110 in the present embodiment and the generation type of blind slot 114 are identical as in step S110, can join
According to step S110.As shown in figure 14, the present embodiment and the difference of a upper embodiment are: the present embodiment is opened on substrate 110
If blind slot 114, i.e., the depth of the slot opened up in the wherein side of substrate 110 is less than the thickness of substrate 110.
S220: providing a chip 20, and chip 20 includes chip body 22 and heat-conducting layer 28.
S230: providing heat-conducting piece 50, and heat-conducting piece 50 and heat-conducting layer 28 are deviated to the thermally conductive connection in side of chip body 22.
S240: chip 20 is placed in blind slot 114, and chip body 22 is attached on the bottom surface of blind slot 114.
Specifically, can using conducting resinl or conductive copper paste, silver paste etc. by chip body 22 far from heat-conducting layer 28 one
Side is attached on the bottom surface of blind slot 114.It as shown in figure 15, in the present embodiment, can be by the side wall of chip body 22 and blind slot 114
Chip body 22, and can be further placed on the center of blind slot 114 by interval setting, in subsequent filling insulating layer,
Insulating layer can be completely filled in the outside of chip 20, improve filling quality.
S250: being arranged insulating layer 150 in blind slot 114, carries out hot pressing to insulating layer 150 and substrate 110, to form encapsulation
Body 10,10 coating chip main body 22 of packaging body, and exposed portion heat-conducting piece 50.
As shown in figure 16, insulating layer 150 is filled in the region between the outer wall of chip 20 and the inner wall of blind slot 114.Wherein,
The material of insulating layer 150 with it is previously described identical, when heating, insulating layer 150 melt after be filled in blind slot 114,
And packaging body 10 is collectively formed with substrate 110, chip 20 is embedded in packaging body 10.
S260: metal layer 30 is set close to the side of heat-conducting layer 28 in packaging body 10, and by metal layer 30 and heat-conducting piece 50
Thermally conductive connection.
Wherein, the set-up mode of metal layer 30 and metal layer 30 and heat-conducting piece 50 are led into hot linked method and upper one real
Apply identical in example, details are not described herein again.
In the present embodiment, the generation type of pin 24 and pad 62 is identical as in a upper embodiment, and details are not described herein again.
Its production method is introduced below for chip assembly 200 shown in Fig. 3.
The difference of the present embodiment and a upper embodiment is metal layer 230 and heat-conducting layer 228 leading hot linked mode.With
It is lower the production method of chip assembly 200 in Fig. 3 to be described in detail.
Figure 17 is please referred to, Figure 17 is the production method flow diagram of chip assembly in Fig. 3.
In the present embodiment, the step of chip assembly as shown in Figure 3 is made include:
M10: a substrate is provided, is provided with an installation space on substrate.
M20: a chip is provided, chip includes chip body and heat-conducting layer, and chip is placed in installation space.
M30: insulating layer being arranged in the installation space, and carries out hot pressing to substrate and insulating layer, to form packaging body, encapsulation
Body coating chip.
M40: metal layer is set close to the side of heat-conducting layer in packaging body, and by metal layer and the thermally conductive connection of heat-conducting layer.
Step in the present embodiment and the step of form chip assembly shown in Fig. 2 the difference is that, the present embodiment
It does not need to connect heat-conducting piece on heat-conducting layer before the packaging.
Wherein, the form of the installation space on substrate can be through slot or blind slot, different according to the form of installation space,
Different packaging methods can be used.The encapsulation side of the packaging method of chip in the present embodiment chip referring to figure 2.
Method, details are not described herein again.
Wherein, there are two ways to connection that metal layer is thermally conductive with heat-conducting layer:
The first: as shown in figure 18, the step of connection that metal layer is thermally conductive with heat-conducting layer, includes:
M41a: the via hole of heat-conducting layer is opened up through metal layer and extended on the metal layer.
Via hole can be opened up on the metal layer by the way of laser drill, the heat-conducting layer being arranged in chip body can
To protect chip, prevent from that chip is caused to burn or be punctured during laser drill.
Heat-conducting piece is set in via hole, there are two ways to by metal layer and heat-conducting layer thermally conductive connection, is respectively as follows:
M42a: being arranged heat-conducting piece in via hole, and by heat-conducting piece respectively with metal layer and the thermally conductive connection of heat-conducting layer.
Wherein, heat-conducting piece can be heating column, and the height of heating column is identical as the height of via hole 40, and the ruler of heating column
It is very little to be equal to or the size of slightly smaller than via hole 40.One end of heating column and the thermally conductive connection of heat-conducting layer, the other end and metal
The thermally conductive connection of layer.Chip assembly as shown in Figure 3 is formd by the way that heating column is arranged in via hole.
Second: as shown in figure 19, the step of connection that metal layer is thermally conductive with heat-conducting layer, includes:
M41b: the via hole of heat-conducting layer is opened up through metal layer and extended on the metal layer.
M42b: heat dissipating layer is set far from the side of packaging body in metal layer, and heat dissipating layer is further filled into via hole
In.
Wherein, heat dissipating layer can be formed by the way of plating.Specifically, the side of metal layer packaging body can be arranged
It is electroplated, and then is formed and be located at coating of the metal layer far from packaging body side and the coating in via hole, the above coating
As heat dissipating layer can further increase the volume of metal layer by the heat dissipating layer that plating is formed, to accelerate to radiate, promoted and dissipated
Thermal effect.In this way, chip assembly as shown in Figure 4 can be formed.
The application also provides a kind of switching tube, which includes previously described chip assembly.In the embodiment of the present application
Switching tube can be used for high definition, liquid crystal, in plasm TV, to replace traditional high-power crystal triode.
Be different from the prior art, the embodiment of the present application by the side of packaging body be arranged metal layer, and by metal layer with
The thermally conductive connection of chip to radiate using metal layer to intracorporal chip is encapsulated does not need that radiator is still further arranged
It radiates to intracorporal chip is encapsulated, structure novel and save the cost.
Above is only an example of the present application, it is not intended to limit the scope of the patents of the application, it is all to utilize this Shen
Please equivalent structure or equivalent flow shift made by specification and accompanying drawing content, be applied directly or indirectly in other relevant skills
Art field similarly includes in the scope of patent protection of the application.
Claims (10)
1. a kind of chip assembly, which is characterized in that the chip assembly includes:
Packaging body；
Chip is embedded in the packaging body, including chip body and the pin being electrically connected with the chip body, the pin
It is extended to outside the packaging body from the chip body；
Metal layer, is arranged in side of the packaging body far from the pin, and with the thermally conductive connection of the chip body, for for
The chip cooling.
2. chip assembly according to claim 1, which is characterized in that the chip is MOS chip, the quantity of the pin
Have multiple, and multiple pins are respectively positioned on the side of chip body.
3. chip assembly according to claim 1, which is characterized in that the pin is by way of conductive column or conductive hole
It extends to outside the packaging body.
4. chip assembly according to claim 1, which is characterized in that the chip assembly further includes heat-conducting piece, one end with
The thermally conductive connection of chip body, the other end and the thermally conductive connection of the metal layer, by the chip body and the metal layer
Thermally conductive connection.
5. chip assembly according to claim 4, which is characterized in that the chip further includes heat-conducting layer, the heat-conducting layer
Setting is in the chip body close to the metal layer side, and the heat-conducting piece is by the heat-conducting layer and the thermally conductive company of the metal layer
It connects.
6. chip assembly according to claim 4, which is characterized in that be also provided with via hole, institute on the chip assembly
Via hole is stated through the metal layer and the part packaging body, the heat-conducting piece is arranged in the via hole, the chip
Component further comprises:
Side of the metal layer far from the packaging body is arranged in heat dissipating layer, the heat dissipating layer, and the heat dissipating layer is led with described
Heat-conducting piece in through-hole is integrally formed.
7. chip assembly according to claim 5, which is characterized in that multiple heat-conducting pieces are arranged in matrix type, and institute
The area for stating matrix is less than the area of the heat-conducting layer.
8. chip assembly according to claim 1, which is characterized in that the packaging body be stacked gradually by multiple core plates and
At printed circuit board.
9. chip assembly according to claim 1, which is characterized in that the packaging body is arranged on the surface of the pin also
It is provided with signals layer, the signals layer includes multiple pads, and the pin is electrically connected with the pad.
10. a kind of switching tube, which is characterized in that the switching tube includes such as the described in any item chip assemblies of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821335101.4U CN208819865U (en) | 2018-08-17 | 2018-08-17 | Switching tube and its chip assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821335101.4U CN208819865U (en) | 2018-08-17 | 2018-08-17 | Switching tube and its chip assembly |
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| Publication Number | Publication Date |
|---|---|
| CN208819865U true CN208819865U (en) | 2019-05-03 |
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ID=66273872
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821335101.4U Active CN208819865U (en) | 2018-08-17 | 2018-08-17 | Switching tube and its chip assembly |
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| CN (1) | CN208819865U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838475A (en) * | 2018-08-17 | 2020-02-25 | 深南电路股份有限公司 | Chip assembly and manufacturing method thereof |
| CN112864022A (en) * | 2019-11-26 | 2021-05-28 | 天芯互联科技有限公司 | Manufacturing method of packaging structure and packaging structure |
| WO2021159306A1 (en) * | 2020-02-12 | 2021-08-19 | 华为技术有限公司 | Packaging structure and preparation method therefor, and electronic device |
| US11362014B2 (en) | 2020-01-02 | 2022-06-14 | Industrial Technology Research Institute | Power module |
-
2018
- 2018-08-17 CN CN201821335101.4U patent/CN208819865U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838475A (en) * | 2018-08-17 | 2020-02-25 | 深南电路股份有限公司 | Chip assembly and manufacturing method thereof |
| CN112864022A (en) * | 2019-11-26 | 2021-05-28 | 天芯互联科技有限公司 | Manufacturing method of packaging structure and packaging structure |
| CN112864022B (en) * | 2019-11-26 | 2024-03-22 | 天芯互联科技有限公司 | Manufacturing method of packaging structure and packaging structure |
| US11362014B2 (en) | 2020-01-02 | 2022-06-14 | Industrial Technology Research Institute | Power module |
| WO2021159306A1 (en) * | 2020-02-12 | 2021-08-19 | 华为技术有限公司 | Packaging structure and preparation method therefor, and electronic device |
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