CN208781104U - A kind of overriding band-gap reference - Google Patents
A kind of overriding band-gap reference Download PDFInfo
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- CN208781104U CN208781104U CN201821756650.9U CN201821756650U CN208781104U CN 208781104 U CN208781104 U CN 208781104U CN 201821756650 U CN201821756650 U CN 201821756650U CN 208781104 U CN208781104 U CN 208781104U
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- error amplifier
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Abstract
The utility model discloses a kind of overriding band-gap references, including the first metal-oxide-semiconductor M1, first bipolar tube Q1, second bipolar tube Q2, first resistor R1, second resistance R2, 3rd resistor R3, adjustable resistance R4, first error amplifier, the source electrode of the first metal-oxide-semiconductor M1 meets VDD, the grid of the first metal-oxide-semiconductor M1 is connected with the output end of first error amplifier, the drain electrode of the first metal-oxide-semiconductor M1 passes through adjustable resistance R4, second resistance R2 is connected with the negative input end of first error amplifier, the drain electrode of the first metal-oxide-semiconductor M1 passes through adjustable resistance R4, 3rd resistor R3 is connected with the positive input terminal of first error amplifier, the positive input terminal of the first error amplifier further through first resistor R1 and the second bipolar tube Q2 emitter It is connected, the negative input end of the first error amplifier is connected with the emitter of the first bipolar tube Q1.The utility model compared with prior art the advantages of be: available one satisfactory zero-temperature coefficient band-gap reference.
Description
Technical field
The utility model relates to band-gap reference field, in particular to a kind of overriding band-gap references.
Background technique
Band-gap reference is the base modules applied in the fully integrated band-gap reference of on piece, and purposes is in the chips for submodule
Reference voltage or electric current are provided, while minimizing area and power, cost is reduced, currently, designing in the CMOS technology of mainstream
Band-gap reference, still suffers from some technological challenges, and Major Difficulties are the presence due to actual error, zero-temperature coefficient benchmark
Difficult to realize, band-gap reference main problem common at present is since there are errors in practical manufacture, the band determined after emulation
Gap reference circuit can not be really achieved the requirement of zero-temperature coefficient, and the present invention will propose a kind of new structure, devise one kind
Overriding band-gap reference solves the above problems.
Utility model content
The purpose of the utility model is to overcome above technological deficiencies, provide a kind of overriding band-gap reference, can obtain
To a satisfactory zero-temperature coefficient band-gap reference.
In order to solve the above technical problems, technical solution provided by the utility model are as follows: a kind of overriding band-gap reference, packet
Include the first metal-oxide-semiconductor M1, the first bipolar tube Q1, the second bipolar tube Q2, first resistor R1, second resistance R2,3rd resistor R3 is adjustable
Resistance R4, first error amplifier, the source electrode of the first metal-oxide-semiconductor M1 meet VDD, the grid of the first metal-oxide-semiconductor M1 with
The output end of first error amplifier is connected, the drain electrode of the first metal-oxide-semiconductor M1 by adjustable resistance R4, second resistance R2 with
The negative input end of first error amplifier is connected, and the drain electrode of the first metal-oxide-semiconductor M1 passes through adjustable resistance R4,3rd resistor R3
It is connected with the positive input terminal of first error amplifier, the positive input terminal of the first error amplifier is further through first resistor R1
It is connected with the emitter of the second bipolar tube Q2, the transmitting of the negative input end of the first error amplifier and the first bipolar tube Q1
Extremely it is connected.
The utility model compared with prior art the advantages of be: the utility model trims band gap base by adjusting R4
Standard, so that a satisfactory zero-temperature coefficient band-gap reference is obtained, to solve to imitate since there are errors in practical manufacture
The shortcomings that band-gap reference circuit very determined afterwards can not be really achieved the requirement of zero-temperature coefficient.
As an improvement, the base earth of the first bipolar tube Q1.
As an improvement, the base earth of the second bipolar tube Q2.
As an improvement, the grounded collector of the second bipolar tube Q2.
As an improvement, the emitter area ratio of the first bipolar tube Q1 and the second bipolar tube Q2 are 1:8.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of overriding band-gap reference of the utility model.
Specific embodiment
The following describes the utility model in further detail with reference to the accompanying drawings.
A kind of overriding band-gap reference, it is characterised in that: including the first metal-oxide-semiconductor M1, the first bipolar tube Q1, second is bipolar
Pipe Q2, first resistor R1, second resistance R2,3rd resistor R3, adjustable resistance R4, first error amplifier, the first MOS
The source electrode of pipe M1 meets VDD, and the grid of the first metal-oxide-semiconductor M1 is connected with the output end of first error amplifier, and described
The drain electrode of one metal-oxide-semiconductor M1 is connected by adjustable resistance R4, second resistance R2 with the negative input end of first error amplifier, described
The drain electrode of first metal-oxide-semiconductor M1 is connected by adjustable resistance R4,3rd resistor R3 with the positive input terminal of first error amplifier, described
The positive input terminal of first error amplifier be connected further through first resistor R1 with the emitter of the second bipolar tube Q2, described
The negative input end of one error amplifier is connected with the emitter of the first bipolar tube Q1.
The base earth of the first bipolar tube Q1.
The base earth of the second bipolar tube Q2.
The grounded collector of the second bipolar tube Q2.
The emitter area ratio of the first bipolar tube Q1 and the second bipolar tube Q2 are 1:8.
In the specific implementation, the output in the circuit is the utility modelWherein R4
It is adjustable resistance array, the design trims band-gap reference by adjusting R4, to obtain a satisfactory zero-temperature coefficient system
Number band-gap reference.
The utility model and embodiments thereof are described above, this description is no restricted, shown in attached drawing
Be also one of the embodiments of the present invention, actual structure is not limited to this.All in all if this field
Those of ordinary skill is enlightened by it, without deviating from the purpose of the present invention, not inventively design with
The similar frame mode of the technical solution and embodiment, all should belong to the protection range of the utility model.
Claims (5)
1. a kind of overriding band-gap reference, it is characterised in that: including the first metal-oxide-semiconductor M1, the first bipolar tube Q1, the second bipolar tube
Q2, first resistor R1, second resistance R2,3rd resistor R3, adjustable resistance R4, first error amplifier, first metal-oxide-semiconductor
The source electrode of M1 meets VDD, and the grid of the first metal-oxide-semiconductor M1 is connected with the output end of first error amplifier, and described first
The drain electrode of metal-oxide-semiconductor M1 is connected by adjustable resistance R4, second resistance R2 with the negative input end of first error amplifier, and described the
The drain electrode of one metal-oxide-semiconductor M1 is connected by adjustable resistance R4,3rd resistor R3 with the positive input terminal of first error amplifier, described
The positive input terminal of first error amplifier is connected further through first resistor R1 with the emitter of the second bipolar tube Q2, and described first
The negative input end of error amplifier is connected with the emitter of the first bipolar tube Q1.
2. the overriding band-gap reference of one kind according to claim 1, it is characterised in that: the first bipolar tube Q1's
Base earth.
3. the overriding band-gap reference of one kind according to claim 1, it is characterised in that: the second bipolar tube Q2's
Base earth.
4. the overriding band-gap reference of one kind according to claim 1, it is characterised in that: the second bipolar tube Q2's
Grounded collector.
5. the overriding band-gap reference of one kind according to claim 1, it is characterised in that: the first bipolar tube Q1 with
The emitter area ratio of second bipolar tube Q2 is 1:8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821756650.9U CN208781104U (en) | 2018-10-29 | 2018-10-29 | A kind of overriding band-gap reference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821756650.9U CN208781104U (en) | 2018-10-29 | 2018-10-29 | A kind of overriding band-gap reference |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208781104U true CN208781104U (en) | 2019-04-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821756650.9U Active CN208781104U (en) | 2018-10-29 | 2018-10-29 | A kind of overriding band-gap reference |
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| CN (1) | CN208781104U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112558672A (en) * | 2020-12-24 | 2021-03-26 | 上海贝岭股份有限公司 | Reference current source and chip comprising same |
-
2018
- 2018-10-29 CN CN201821756650.9U patent/CN208781104U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112558672A (en) * | 2020-12-24 | 2021-03-26 | 上海贝岭股份有限公司 | Reference current source and chip comprising same |
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