CN208722902U - A kind of back contacts heterojunction solar battery - Google Patents
A kind of back contacts heterojunction solar battery Download PDFInfo
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- CN208722902U CN208722902U CN201821457785.5U CN201821457785U CN208722902U CN 208722902 U CN208722902 U CN 208722902U CN 201821457785 U CN201821457785 U CN 201821457785U CN 208722902 U CN208722902 U CN 208722902U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of back contacts heterojunction solar battery, belongs to the technical field of solar-energy photo-voltaic cell, including substrate, is provided with amorphous SiO upwards in turn in the front of substratexLayer, amorphous SiNxLayer, the back side of substrate by be dielectrically separated from section every, be arranged alternately that electronics generates and collecting region and hole generate and collecting region, the electronics generates and collecting region includes intrinsic hydrogenated amorphous silicon layer I1, N-shaped hydrogenated nano-crystalline silicon layer, intrinsic hydrogenated amorphous silicon layer I2, the p-type hydrogenated nano-crystalline silicon layer, ITO layer, electronic collection electrode being successively arranged outward in substrate back；The hole generates and collecting region includes intrinsic hydrogenated amorphous silicon layer I2, the p-type hydrogenated nano-crystalline silicon layer, ITO layer, hole-collecting electrode being successively arranged outward in substrate back.The utility model improves the transfer efficiency of battery, reduces production cost, more optimized structure.
Description
Technical field
The utility model belongs to the technical field of solar-energy photo-voltaic cell, is related to a kind of back contacts heterojunction solar electricity
Pond.The utility model technically introduces tunnel junctions, utilizes the resulting p-type doping desired zone of laser equipment laser scribing twice
6, it is dielectrically separated from area 10, cell p, the subregion of n doping and isolation is realized, had both combined two kinds of batteries of hetero-junctions and back contacts
Advantage, and the disadvantage of conventional back contact technical matters complexity is overcome, it is mentioned on the basis of reducing production cost to realize
The purpose of high cell photoelectric transfer efficiency.It further improves the transfer efficiency of battery simultaneously, reduce production cost, structure is more
Optimization.
Background technique
Energy crisis and problem of environmental pollution promote the extensive research and application and development of clean energy resource.Photovoltaic hair
Electricity has many advantages, such as that resource abundance, cleaning, safety, service life are long, it has also become with fastest developing speed in renewable energy technologies, most active
Research field.Solar-energy photo-voltaic cell currently on the market mainly has crystal silicon cell (including monocrystalline silicon, polysilicon), amorphous
Silicon thin film, Cadimium telluride thin film and CIGS thin-film solar cell etc..High efficiency is the development trend of current solar cell, and
Reduce the key of cost of electricity-generating.High-efficiency battery technology mainly has p type single crystal silicon PERC, N-type PERT, TOPCon, the back contacts sun
Battery (IBC) and crystalline silicon/non crystal heterogeneous agglomeration battery etc., wherein crystalline silicon/non crystal heterogeneous agglomeration solar cell combines crystalline substance
It the advantages of body silion cell and amorphous silicon battery, is rapidly developed in recent years, is a kind of very promising efficient
Battery technology.The transformation efficiency of hetero-junction solar cell (HIT) is increased to 23% by May, 2009, Sanyo company, and in quilt
2013 after Panasonic purchase, hetero-junction solar cell laboratory transfer efficiency reached 24.7%.Meanwhile the back contacts sun
Battery is all located at the back side of cell piece due to anode and cathode, and front is blocked without grid line, and the short of battery is greatly improved
Road electric current and photoelectric conversion efficiency receive everybody extensive concern.
In various efficient solar battery technologies, back contacts hetero-junctions that heteroj unction technologies and back contacts technology are combined
Battery (HBC), the advantages of both remaining, it is considered to be a kind of most promising efficient solar battery technology.At present this
Kind back contacts hetero-junction solar cell peak efficiency has had reached 26.57%.But preparation HBC battery needs that photoetching is repeated
Operation, increases process complexity and process control difficulties, is highly detrimental to inexpensive large-scale production.
Summary of the invention
The purpose of the utility model is to provide a kind of Novel back contact heterojunction solar battery structures and preparation method thereof.This
1. utility model passes through the crystallization rate for improving p, n doped layer, realize electronics in the tunnelling at the interface np；2. area needed for p-type doping
The setting in domain realizes the subregion of p, n doping, in conjunction with the setting for being dielectrically separated from area, realizes being effectively isolated for p, n doped region.Tunnel
Wear effect cooperation p-type doping desired zone, the setting that is dielectrically separated from area is avoided and needed in conventional process to n-type doping floor
The p-type doping layer on surface carries out the operation of photoetching removal.Guaranteeing isolation sector width and p-type doping area longitudinal direction depth far below n
In the case where type doped region, the isolation of p, n doped region is realized, improves the insulation performance between battery plus-negative plate, anti-leak-stopping
Electricity.
The utility model be realize its purpose the technical solution adopted is that:
A kind of back contacts heterojunction solar battery, including substrate are provided with amorphous in the front of substrate upwards in turn
SiOxLayer, amorphous SiNxLayer, the back side of substrate by be dielectrically separated from section every, be arranged alternately electronics generate and collecting region and
Hole generates and collecting region, and the electronics generates and collecting region includes the intrinsic hydrogenated amorphous being successively arranged outward in substrate back
Silicon layer I1, N-shaped hydrogenated nano-crystalline silicon layer, intrinsic hydrogenated amorphous silicon layer I2, p-type hydrogenated nano-crystalline silicon layer, ITO layer, electronic collection electrode；
The hole generates and collecting region includes the intrinsic hydrogenated amorphous silicon layer I2 being successively arranged outward in substrate back, p-type hydrogenation
Nanometer silicon layer, ITO layer, hole-collecting electrode.
The substrate is N-shaped monocrystalline silicon, and 100~200 μm of thickness, resistivity is the 2 Ω ﹒ Ω ﹒ cm of cm~13, and crystal orientation is < 100
>。
Amorphous SiOx layers of the thickness is 3~8nm.
The amorphous SiNx layer with a thickness of 70~110nm.
The thickness of the intrinsic hydrogenated amorphous silicon layer I1 4 and intrinsic hydrogenated amorphous silicon layer I2 7 is 3~8nm.
The N-shaped hydrogenated nano-crystalline silicon layer with a thickness of 10~30nm.
The p-type hydrogenated nano-crystalline silicon layer with a thickness of 10~30nm.
The ITO layer with a thickness of 80~150nm, sheet resistance is 40 Ω/~100 Ω/.
The thickness of the electronic collection electrode and hole-collecting electrode is 15~40 μm, and width is 200~700 μm.
The beneficial effects of the utility model are:
(prior art is that the back contacts of conventional back contact hetero-junction solar cell preparation method preparation are heterogeneous compared with prior art
Junction battery, such as U.S. Sunpower realize pn doping and separation using High temperature diffusion+multistep photoetching), the utility model improves n
The crystallization rate (about 15%) of intrinsic hydrogenated amorphous silicon layer and p-type hydrogenated nano-crystalline silicon layer that type nanometer silicon surface is deposited, enhancing
Carrier passes through the tunneling effect at the interface np, so that forming good Ohmic contact between N-shaped nanometer silicon layer and ITO layer.Simultaneously
Cooperate laser scribing twice, avoids the cumbersome photoetching process of conventional back contact heterojunction solar battery.It had both combined so different
The advantages of two kinds of batteries of matter knot and back contacts, and the disadvantage of conventional back contact technology complexity is overcome, exist to realize battery
Remove the reduction of multistep photoetching bring production cost on the basis of holding high conversion efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model back contacts heterojunction solar battery.
Fig. 2 is the structural schematic diagram of substrate.
Fig. 3 is the structural schematic diagram that substrate face grows amorphous SiOx layers.
Fig. 4 is amorphous SiOxSiN is deposited on layerxThe structural schematic diagram of layer.
Fig. 5 is the structural schematic diagram that substrate back grows intrinsic hydrogenated amorphous silicon layer I1.
Fig. 6 is the structural schematic diagram of depositing n-type hydrogenated nano-crystalline silicon layer on intrinsic hydrogenated amorphous silicon layer I1.
Fig. 7 is the structural schematic diagram that p-type doping desired zone is formed.
Fig. 8 is the structural schematic diagram that intrinsic hydrogenated amorphous silicon layer I2 is grown on substrate back and N-shaped hydrogenated nano-crystalline silicon layer.
Fig. 9 is the structural schematic diagram of intrinsic hydrogenated amorphous silicon layer I2 growth p-type hydrogenated nano-crystalline silicon layer.
Figure 10 is the structural schematic diagram that ITO layer is formed.
Figure 11 is the structural schematic diagram for being dielectrically separated from area's formation.
In attached drawing, 1 represents substrate, and 2 represent amorphous SiOxLayer, 3 represent amorphous SiNxLayer, 4 represent intrinsic hydrogenated amorphous silicon layer
I1,5 represent N-shaped hydrogenated nano-crystalline silicon layer, and 6 represent p-type doping desired zone, and 7 represent intrinsic hydrogenated amorphous silicon layer I2, and 8 represent p-type
Hydrogenated nano-crystalline silicon layer, 9 represent ITO layer, and 10 representatives are dielectrically separated from area, and 11 represent electronic collection electrode, and 12 represent hole collection electricity
Pole.
Specific embodiment
Combined with specific embodiments below and attached drawing is further described the utility model.
The battery chip architecture of the utility model, including substrate 1, the substrate use N-shaped crystalline silicon material；Substrate face it is non-
Brilliant SiOx layer 2 and amorphous SiNx layer 3；The intrinsic hydrogenated amorphous silicon layer I1 4 of substrate back, N-shaped hydrogenated nano-crystalline silicon layer 5, intrinsic hydrogen
Change amorphous silicon layer I2 7, p-type hydrogenated nano-crystalline silicon layer 8, ITO layer 9 is dielectrically separated from 10, and electronic collection electrode 11 and hole collection are electric
Pole 12.As shown in Figure 1.
One, specific embodiment
Embodiment 1
A kind of back contacts heterojunction solar battery, using N-shaped monocrystalline silicon as substrate 1,100~200 μm of thickness, resistivity is
The 2 Ω ﹒ Ω ﹒ cm of cm~13, crystal orientation are<100>, are provided with 5nm upwards in turn in the front of substrate 1 and are altogether unjustifiable brilliant SiOx layer 2,90nm
Be altogether unjustifiable brilliant SiNx layer 3, the back side of substrate 1 by be dielectrically separated from the interval of area 10, be arranged alternately electronics generate and collecting region and
Hole generates and collecting region, and the electronics generates and collecting region includes the thick intrinsic hydrogen of 5nm being successively arranged outward at 1 back side of substrate
Change the thick intrinsic hydrogenated amorphous silicon layer I2 7 of amorphous silicon layer I1 4,15nm thickness N-shaped hydrogenated nano-crystalline silicon layer 5,5nm, the hydrogenation of 20nm thickness p-type
The electronic collection electrode 11 of 9,150 μm of nanometer silicon layer 8,120nm thick ito layer width；The hole generates and collecting region includes
In the intrinsic hydrogenated amorphous silicon layer I2 7 of 5nm that substrate back is successively arranged outward, 20nm thickness p-type hydrogenated nano-crystalline silicon layer 8,120nm
The hole-collecting electrode 12 of 9,400 μm of width of thick ito layer.
Embodiment 2
A kind of back contacts heterojunction solar battery, using N-shaped monocrystalline silicon as substrate 1,100~200 μm of thickness, resistivity is
The 2 Ω ﹒ Ω ﹒ cm of cm~13, crystal orientation are<100>, are provided with 3nm upwards in turn in the front of substrate 1 and are altogether unjustifiable brilliant SiOxLayer 2,70nm
Be altogether unjustifiable brilliant SiNxLayer 3, the back side of substrate 1 by be dielectrically separated from area 10 interval, be arranged alternately electronics generate and collecting region and
Hole generates and collecting region, and the electronics generates and collecting region includes the thick intrinsic hydrogen of 3nm being successively arranged outward at 1 back side of substrate
Change the thick intrinsic hydrogenated amorphous silicon layer I2 7 of amorphous silicon layer I1 4,10nm thickness N-shaped hydrogenated nano-crystalline silicon layer 5,3nm, the hydrogenation of 10nm thickness p-type
The electronic collection electrode 11 of 9,200 μm of nanometer silicon layer 8,80nm thick ito layer width；The hole generates and collecting region is included in
The intrinsic hydrogenated amorphous silicon layer I2 7 of the 3nm that substrate back is successively arranged outward, 10nm thickness p-type hydrogenated nano-crystalline silicon layer 8,80nm are thick
The hole-collecting electrode 12 of 9,200 μm of width of ITO layer.
Embodiment 3
A kind of back contacts heterojunction solar battery, using N-shaped monocrystalline silicon as substrate 1,100~200 μm of thickness, resistivity is
The 2 Ω ﹒ Ω ﹒ cm of cm~13, crystal orientation are<100>, are provided with 8nm upwards in turn in the front of substrate 1 and are altogether unjustifiable brilliant SiOxLayer 2,110nm
Be altogether unjustifiable brilliant SiNxLayer 3, the back side of substrate 1 by be dielectrically separated from area 10 interval, be arranged alternately electronics generate and collecting region and
Hole generates and collecting region, and the electronics generates and collecting region includes the thick intrinsic hydrogen of 8nm being successively arranged outward at 1 back side of substrate
Change the thick intrinsic hydrogenated amorphous silicon layer I2 7 of amorphous silicon layer I1 4,30nm thickness N-shaped hydrogenated nano-crystalline silicon layer 5,8nm, the hydrogenation of 30nm thickness p-type
The electronic collection electrode 11 of 9,700 μm of nanometer silicon layer 8,150nm thick ito layer width；The hole generates and collecting region includes
In the intrinsic hydrogenated amorphous silicon layer I2 7 of 8nm that substrate back is successively arranged outward, 30nm thickness p-type hydrogenated nano-crystalline silicon layer 8,150nm
The hole-collecting electrode 12 of 9,700 μm of width of thick ito layer.
Claims (8)
1. a kind of back contacts heterojunction solar battery, including substrate (1), which is characterized in that substrate (1) front successively to
On be provided with amorphous SiOxLayer (2), amorphous SiNxLayer (3) is spaced, alternately at the back side of substrate (1) by area (10) are dielectrically separated from
It is provided with electronics generation and collecting region and hole generates and collecting region, the electronics generates and collecting region is included in substrate (1) back
Intrinsic hydrogenated amorphous silicon layer I1 (4) that face is successively arranged outward, N-shaped hydrogenated nano-crystalline silicon layer (5), intrinsic hydrogenated amorphous silicon layer I2
(7), p-type hydrogenated nano-crystalline silicon layer (8), ITO layer (9), electronic collection electrode (11)；The hole generates and collecting region is included in
It is intrinsic hydrogenated amorphous silicon layer I2 (7) that substrate (1) back side is successively arranged outward, p-type hydrogenated nano-crystalline silicon layer (8), ITO layer (9), empty
Cave passive electrode (12).
2. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the substrate (1) is n
Type monocrystalline silicon, 100~200 μm of thickness, resistivity is the 2 Ω ﹒ Ω ﹒ cm of cm~13, and crystal orientation is<100>.
3. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the amorphous SiOxLayer
(2) thickness is 3~8nm.
4. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the amorphous SiNxLayer
(3) with a thickness of 70~110nm.
5. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that described intrinsic hydrogenated non-
The thickness of crystal silicon layer I1 (4) and intrinsic hydrogenated amorphous silicon layer I2 (7) are 3~8nm.
6. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the N-shaped hydrogenation is received
Rice silicon layer (5) with a thickness of 10~30nm.
7. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the p-type hydrogenation is received
Rice silicon layer (8) with a thickness of 10~30nm.
8. a kind of back contacts heterojunction solar battery according to claim 1, which is characterized in that the ITO layer (9)
With a thickness of 80~150nm, sheet resistance is 40 Ω/~100 Ω/.
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| CN201821457785.5U CN208722902U (en) | 2018-09-06 | 2018-09-06 | A kind of back contacts heterojunction solar battery |
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| CN201821457785.5U CN208722902U (en) | 2018-09-06 | 2018-09-06 | A kind of back contacts heterojunction solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922938A (en) * | 2018-09-06 | 2018-11-30 | 河北汉盛光电科技有限公司 | A kind of back contacts heterojunction solar battery and preparation method thereof |
| CN112018196A (en) * | 2020-08-04 | 2020-12-01 | 隆基绿能科技股份有限公司 | Back contact solar cell, production method thereof and back contact cell assembly |
-
2018
- 2018-09-06 CN CN201821457785.5U patent/CN208722902U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922938A (en) * | 2018-09-06 | 2018-11-30 | 河北汉盛光电科技有限公司 | A kind of back contacts heterojunction solar battery and preparation method thereof |
| CN108922938B (en) * | 2018-09-06 | 2024-03-15 | 福建钜能电力有限公司 | Back contact heterojunction solar cell and preparation method thereof |
| CN112018196A (en) * | 2020-08-04 | 2020-12-01 | 隆基绿能科技股份有限公司 | Back contact solar cell, production method thereof and back contact cell assembly |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211019 Address after: Room 609, gate 3, building 10, Southwest Village, Nankai University, Nankai District, Tianjin Patentee after: Xue Junming Address before: 053800 No. 3200, Fuyang Third Road, industrial new area, Hengshui City, Hebei Province Patentee before: CHINA HISUN PV TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20211208 Address after: 351100 No. 655, Guohuan East Road, Hanjiang District, Putian City, Fujian Province Patentee after: FUJIAN JP-SOLAR Co.,Ltd. Address before: Room 609, gate 3, building 10, Southwest Village, Nankai University, Nankai District, Tianjin Patentee before: Xue Junming |