CN208690033U - A kind of chip resistor - Google Patents
A kind of chip resistor Download PDFInfo
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- CN208690033U CN208690033U CN201821293575.7U CN201821293575U CN208690033U CN 208690033 U CN208690033 U CN 208690033U CN 201821293575 U CN201821293575 U CN 201821293575U CN 208690033 U CN208690033 U CN 208690033U
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Abstract
The utility model relates to a kind of chip resistor, which includes: insulating substrate；First front electrode, first front electrode include the first front electrode large electrode and the first front electrode small electrode, the first front large electrode and the first front electrode small electrode is respectively arranged at insulating substrate upper surface both ends and there are gaps between the two；Resistive layer, first front electrode of resistive layer covering part and fill two the first front electrodes between gap；Second front electrode, second front electrode include the second front small electrode and the second front large electrode, and second front small electrode is connect with the first front large electrode face, and second front large electrode is connect with the first front electrode small electrode and resistance level；First protective layer, the first protective layer covering part the second front electrode large electrode and fill two the second front electrodes between gap.Chip resistor provided by the utility model has the advantages that resistance value is low and TCR is horizontal high.
Description
Technical field
The utility model relates to a kind of chip resistor more particularly to a kind of chips with low-resistance value and low tcr values
Resistor.
Background technique
In recent years, with the development of portable phone, video camera, tablet computer, the demand to compact electronic device is increasingly
Increase.The performance of these compact electronic devices is directly related with the electronic device being used in these electronic devices, especially with
The performance of the chip resistor of ultralow resistance value is directly related.Chip low-resistance usually has thick film low-resistance, alloy film low-resistance, pure
Three mainstream types of alloy low-resistance, are covered by resistance value and divide thick film low-resistance covering 1000m Ω >=R >=10m Ω, and alloy film is super
Low-resistance covers 500m Ω >=R >=1m Ω, and homozygous gold low-resistance covers 200m Ω >=R >=0.5m Ω.It is arranged from high to low by TCR performance
The homozygous golden low-resistance >=alloy film low-resistance > thick film low-resistance of sequence.Sort homozygous golden low-resistance > from high to low by power-performance
Alloy film low-resistance > thick film low-resistance.The homozygous golden low-resistance > alloy film low-resistance > thick film of sequence from high to low is super at cost
Low-resistance.TCR value is higher, performance is lower, and TCR value is lower, and performance is higher.
As shown in Fig. 2, being existing common thick film low-resistance product structure figure, printed in the lower surface of substrate 100 a pair of
Back side silver conductive layer 601,602, surface printing a pair of front silver conductive layer 201,202, is then burnt on the substrate 100.In base
Plate 100 surface printing, one layer of resistive layer 300, and be connected with the overlap joint of front silver conductive layer 201,202, then it is burnt into.In resistive layer
The first insulating protective layer 400 is printed on 300, is then burnt into.The second insulating protective layer 500 is printed on the first insulating protective layer,
Then it is burnt into.The electric resistance structure of the thick-diaphragm resistor of the cross connection type of this use is limited by resistance slurry resistivity, usually
The minimum resistance value of 10m Ω can only be obtained.10~100m Ω due in resistance slurry silver content be significantly increased, TCR value is horizontal anxious
Play increases.
The utility model be exactly from solve the above problems, provide a kind of resistance value down to 0.5m Ω and TCR level it is low
Thick-diaphragm resistor.
Summary of the invention
The utility model aiming at the problems existing in the prior art, provides a kind of chip resistor, and the chip resistor is most
Low resistance can achieve 0.5m Ω and its TCR level is low.
To achieve the above object, the technical scheme that the utility model is provided is as follows:
A kind of chip resistor, comprising: insulating substrate；First front electrode, first front electrode include first just
Face electrode large electrode and the first front electrode small electrode, the first front large electrode and the first front electrode small electrode are respectively arranged at
Insulating substrate upper surface both ends and there are gaps between the two；Resistive layer, first front electrode of resistive layer covering part and
Fill the gap between two the first front electrodes；Second front electrode, second front electrode include the second small electricity in front
Pole and the second front large electrode, second front small electrode are connect with the first front large electrode face, the big electricity in the second front
Pole is connect with the first front electrode small electrode and resistance level, and there are gaps between two the second front electrodes；First protection
Layer, the gap between two the second front electrodes of the first protective layer covering part the second front electrode large electrode and filling.
Further, the chip resistor further includes the second protective layer, and second protective layer covers the first protective layer
And the second front electrode of part.
Further, the chip resistor further includes a pair of of rear electrode, and the rear electrode is arranged in insulating substrate
Lower surface both ends.
Further, the chip resistor further includes a pair of of sputtering layer, the sputtering layer and rear electrode, the first front
Electrode and the connection of the second front electrode.
Further, the resistive layer with a thickness of 10~50um.
Further, the firing temperature of the resistive layer is 840~860 DEG C.
Further, first front electrode, the second front electrode material be silver palladium alloy, in the silver palladium alloy
The weight percent hundred of palladium is 0.1~30%.
Further, the firing temperature of first front electrode is 880~900 DEG C.
Further, the firing temperature of second front electrode is 800~830 DEG C.
Further, first protective layer is glass material.
Further, the chip resistor further includes the second protective layer, and second protective layer covers the first protective layer
And the second front electrode of part.
Further, the resistive layer with a thickness of 10~50um.
Further, first front electrode, the second front electrode material be silver palladium alloy, in the silver palladium alloy
The weight percent hundred of palladium is 0.1~30%.
Compared with prior art, the utility model has the following beneficial effects: using thick film piece provided by the utility model
Formula resistor, minimum resistance value can achieve 0.5m Ω and its TCR is horizontal high.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model chip resistor；
Fig. 2 is the structural schematic diagram of the chip resistor of the prior art；
Fig. 3 is the flow chart of the manufacturing method of the utility model chip resistor；
Fig. 4 is the resistance resulting structure figure of the chip resistor of the prior art；
Fig. 5 is the resistance resulting structure figure of the utility model chip resistor；
Fig. 6 is the schematic diagram that the utility model chip resistor resistance trims；
Fig. 7 to Figure 14 is the schematic diagram of the utility model chip resistor sintering process.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is not intended to limit the scope of the present invention for illustrating the utility model.
As shown in Figure 1, being a kind of a kind of embodiment of chip resistor of the utility model, which includes:
Insulating substrate 10, insulating substrate 10 can be cuboid, can be made of ceramic material；
First front electrode, first front electrode include that the first front electrode large electrode 21 and the first front electrode are small
Electrode 22, the first front large electrode 21 and the first front electrode small electrode 22 be respectively arranged at 10 upper surface both ends of insulating substrate and
Between the two there are gap, the first front electrode small one and large one, be separately positioned on the both ends of 10 upper surface of insulating substrate, two are just
Certain spacing is preset between the electrode of face, the material of the first front electrode can be silver palladium alloy, when for silver palladium alloy material
First front electrode uses thick-film technique printing to be burnt into 880~900 DEG C, and wherein the weight percent of palladium accounts for 0.1~30%, excellent
It is selected as 0.5%.
Resistive layer 30,30 first front electrode of covering part of resistive layer and filling two the first front electrodes between
Gap, as shown in Figure 1,30 the first front electrode of covering part large electrode 21 of resistive layer and the first front electrode small electrode 22 and filling out
The gap between two the first front electrodes is filled, but resistive layer 30 not fully covers the first front electrode large electrode 21 and
One front electrode small electrode 22 does not cover resistive layer 30 in two the first front electrodes close to the both ends of insulating substrate 10,
Resistive layer 30 with a thickness of 10~50 μm, preferably 20~25 μm, resistive layer 30 can be printed using lower-cost middle resistance plasma resistance
Up to being made, resistive layer 30 can be burnt into brush with 840~860 DEG C of temperature；
Second front electrode, second front electrode include the second front small electrode 41 and the second front large electrode 42,
Second front small electrode 41 is connect with 21 face of the first front large electrode, the second front large electrode 42 and the first front electrode small electrode
22 and the connection of 30 face of resistive layer, there are gaps between two the second front electrodes, as shown in Figure 1, the small electricity of the second front electrode
Pole 41 is arranged on the first front electrode large electrode 21, connect with 21 face of the first front electrode large electrode, but the second front electrode
Small electrode 41 is not connected to resistive layer 30 and the second front electrode large electrode 42, between there are gap, the second front electrode is big
Electrode 42 is arranged on the first front electrode small electrode 22 and resistive layer 30, connect with 22 face of the first front electrode small electrode
It is connect simultaneously with 30 face of resistive layer, the material of the second front electrode can be silver palladium alloy, second when for silver palladium alloy material
Front electrode uses thick-film technique printing to be burnt into 800~830 DEG C, preferably 815 DEG C, wherein the weight percent of palladium account for 0.1~
30%, preferably 0.5%.
First protective layer 50,50 the second front electrode of covering part large electrode 42 of the first protective layer and filling two the
Gap between two front electrodes, as shown in Figure 1, the first protective layer 50 is covered on the second front large electrode 42 and filling second
Gap between front large electrode 42 and the second front small electrode 41, but there is no all the second fronts of covering for the first protective layer 50
Large electrode 42, but one for reserving the second front large electrode 42 close to 10 end of insulating substrate is not covered with, the first protective layer
50 can be burnt into glass paste.
As shown in Figure 1, the chip resistor further includes the second protective layer 60, the covering of the second protective layer 60 first is protected
The second front electrode of sheath 50 and part, the second protective layer 60 can be burnt into glass or epoxy resin slurry.
As shown in Figure 1, being respectively from top to bottom from the projecting direction direction downward vertically in 60 middle position of the second protective layer
Second protective layer 60, the first protective layer 50, the second front electrode large electrode 42, resistive layer 30, the first front electrode large electrode 21
And insulating substrate 10.
As shown in Figure 1, the chip resistor further includes a pair of of rear electrode 71,72, rear electrode 71,72 is arranged exhausted
10 lower surface both ends of edge substrate, rear electrode 71,72 pass through a sputtering layer 80 and the first front electrode and the second front electrode
Connection coats the first tin coating 90 outside sputtering layer 80, coats the second tin coating 100 outside the first tin coating 90, sputtering layer 80,
First tin coating 90, the second tin coating 100 are closely connect with the second protective layer 60.
The computing the resistor value of thick-film resistor: set resistance length as l, width w, with a thickness of t, resistance material resistivity be ρ
O, thick-film resistor film resistance can be determined by following formula: R=ρ o ● (l/s)=ρ o ● (l/ (t ● w)).
Fig. 4 is common thick film sheet type low-resistance value resistor (referring to Fig. 2) resistance resulting structure figure, R1=ρ o ● (l1/
(t1●w1))。
Fig. 5 is the ultralow resistance value chip resistor of the utility model (referring to Fig. 1) resistance resulting structure figure, R2=ρ o ●
(l2/(t2●w2)), due to l2Much smaller than l1, t2●w2Much larger than t1●w1, so R2R can be much smaller than1, thus, using
Resistance value under structure of the invention is far below the resistance value under common thick film sheet type low-resistance value resistor structure, using the present invention
Resistance value under structure can be down to 0.5m Ω resistance value.
Fig. 3 is the flow chart of the manufacturing method of the chip resistor of the utility model, the method for the manufacture chip resistor
Include:
S100 is coated with silver conductive paste using thick film screen printing mode at insulating substrate front both ends, is fired into a pair of the
One front electrode；
S200 is coated with resistance slurry using thick film screen printing mode on insulating substrate front and the first front electrode, is burnt into
Obtain resistive layer；
S300 is coated with silver conductive paste using thick film screen printing mode, is fired on the first front electrode and resistive layer
A pair of second front electrode；
S400, using thick film screen printing mode coated glass slurry, is fired into the first protection on the second front electrode
Layer.
S500, in the upright projection direction of the first protective layer using laser boring or closed rectangular or closed annular cutting
The laminated construction of firing through removal or is cut off part, realizes that resistance value trims by mode.
S600, on the first protective layer and the second front electrode, using thick film screen printing mode coated glass or epoxy resin
Slurry is fired into the second protective layer.
Fig. 7 is the state of the insulating substrate before being fired into a pair of first front electrode, and Fig. 8 is in insulating substrate using thick
Film mode of printing be coated with silver conductive paste after state, Fig. 9 be to coating silver conductive paste after to obtained after sintering a pair first
State after front electrode, Figure 10 are to be coated with electricity using thick film screen printing mode on insulating substrate front and the first front electrode
Resistance paste, sintering obtain the state of resistive layer；Figure 11 is to be applied on the first front electrode and resistive layer using thick film screen printing mode
Cloth silver conductive paste, sintering obtain the state after a pair of second front electrode；Figure 12 is on the second front electrode, using thick film
Mode of printing coated glass slurry, sintering obtain the state after the first protective layer；Figure 13 is to the above-mentioned lamination result sintered into
Carry out the state after resistance trims；Figure 14 is to be coated on the first protective layer and the second front electrode using thick film screen printing mode
Glass or epoxy resin slurry, sintering obtain the state of the second protective layer.
Resistance trims, and resistance trims the process that subtle adjustment is carried out for the resistance value of chip resistor.Existing chip electricity
The resistance common resistance of device, which trims mode, has straight line, L-type, multitool to the laser trimmings mode such as cutting.But the resistance that this present invention uses
Film layer structure, which is determined, cannot effectively change its resistance value to the laser trimmings mode such as cutting using existing straight line, L-type, multitool.
Chip resistor resistance of the invention trim using get ready trim, three kinds of closed rectangular, closed annular laser trimming mode shapes
At preferred closed annular laser trimming mode.
As shown in fig. 6, laser is carved along black arrow direction, cut on 52 surface of the second front electrode large electrode at closed loop
Mouthful, and cutting mouth extends vertically through the second front electrode large electrode 52, resistive layer 4, the first front electrode large electrode 31, makes closed loop
Each metal layer forms isolated island inside cutting mouth, changes resistive layer cross-sectional area, reaches resistance value and trim purpose.
There is apparent phase counterdiffusion with electrode when thick film low-resistance resistance slurry is sintered, using laminated construction due to upper/lower electrode
Have with resistive layer and significantly extend influence, so if being expanded using 5~15 μm of film thickness of conventional chip resistive layer by electrode
Dissipating influences the higher even more than 1000ppm of its TCR level.The present invention is by thickening resistive layer to 20~25 μm, and using the
One 900 DEG C of face electrode firing temperature, 850 DEG C of resistive layer firing temperature, the second face electrode is burnt into 800 DEG C of problem, firing temperature rank
Ladder successively decreases, and reduces inter-level diffusion caused by high temperature when repeating to be burnt into and aggravates, effectively reduces TCR level.
The utility model provides a kind of chip resistor, by changing the structure of chip resistor, makes its lowest resistance value
Reach 0.5m Ω and its TCR is horizontal high.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all practical at this
In novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the protection of the utility model
Within the scope of.
Claims (10)
1. a kind of chip resistor characterized by comprising
Insulating substrate；
First front electrode, first front electrode include the first front electrode large electrode and the first front electrode small electrode,
First front large electrode and the first front electrode small electrode be respectively arranged at insulating substrate upper surface both ends and between the two there are
Gap；
Resistive layer, first front electrode of resistive layer covering part and fill two the first front electrodes between gap；
Second front electrode, second front electrode include the second front small electrode and the second front large electrode, described second
Front small electrode is connect with the first front large electrode face, second front large electrode and the first front electrode small electrode and electricity
Resistance layer face connects, and there are gaps between two the second front electrodes；
First protective layer, two the second front electrodes of the first protective layer covering part the second front electrode large electrode and filling
Between gap.
2. chip resistor according to claim 1, it is characterised in that: the chip resistor further includes the second protection
Layer, second protective layer cover the first protective layer and the second front electrode of part.
3. chip resistor according to claim 2, it is characterised in that: the chip resistor further includes a pair of of back side electricity
Pole, the rear electrode are arranged at insulating substrate lower surface both ends.
4. chip resistor according to claim 3, which is characterized in that the chip resistor further includes a pair of of sputtering
Layer, the sputtering layer are connect with rear electrode, the first front electrode and the second front electrode.
5. chip resistor according to any one of claims 1 to 4, it is characterised in that: the resistive layer with a thickness of 10~
50um。
6. chip resistor according to claim 5, which is characterized in that the firing temperature of the resistive layer is 840~860
℃。
7. chip resistor according to any one of claims 1 to 4, it is characterised in that: first front electrode, second are just
The material of face electrode is silver palladium alloy, and the weight percent hundred of palladium is 0.1~30% in the silver palladium alloy.
8. chip resistor according to claim 7, which is characterized in that the firing temperature of first front electrode is
880~900 DEG C.
9. chip resistor according to claim 7, which is characterized in that the firing temperature of second front electrode is
800~830 DEG C.
10. chip resistor according to any one of claims 1 to 4, it is characterised in that: first protective layer is glass material
Material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821293575.7U CN208690033U (en) | 2018-08-10 | 2018-08-10 | A kind of chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821293575.7U CN208690033U (en) | 2018-08-10 | 2018-08-10 | A kind of chip resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208690033U true CN208690033U (en) | 2019-04-02 |
Family
ID=65884744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821293575.7U Active CN208690033U (en) | 2018-08-10 | 2018-08-10 | A kind of chip resistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962516A (en) * | 2018-08-10 | 2018-12-07 | 广东风华高新科技股份有限公司 | A kind of chip resistor and its manufacturing method |
| CN115004324A (en) * | 2020-01-27 | 2022-09-02 | Koa株式会社 | Resistor with a resistor element |
-
2018
- 2018-08-10 CN CN201821293575.7U patent/CN208690033U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962516A (en) * | 2018-08-10 | 2018-12-07 | 广东风华高新科技股份有限公司 | A kind of chip resistor and its manufacturing method |
| CN108962516B (en) * | 2018-08-10 | 2024-04-30 | 广东风华高新科技股份有限公司 | Chip resistor and manufacturing method thereof |
| CN115004324A (en) * | 2020-01-27 | 2022-09-02 | Koa株式会社 | Resistor with a resistor element |
| CN115004324B (en) * | 2020-01-27 | 2024-02-13 | Koa株式会社 | Resistor |
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