CN101399100A - Low-resistance thermosensitive resistor and its making method thermister chip and method for manufacturing same - Google Patents
Low-resistance thermosensitive resistor and its making method thermister chip and method for manufacturing same Download PDFInfo
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- CN101399100A CN101399100A CNA2007101529525A CN200710152952A CN101399100A CN 101399100 A CN101399100 A CN 101399100A CN A2007101529525 A CNA2007101529525 A CN A2007101529525A CN 200710152952 A CN200710152952 A CN 200710152952A CN 101399100 A CN101399100 A CN 101399100A
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Abstract
The invention discloses a thermal resistor chip which comprises a substrate, a first electrode, a second electrode, a thermal resistor layer and a first buffer layer. The substrate is provided with a first surface. The first electrode is arranged on the first surface. The first buffer layer covers at least part of the first electrode, and the thermal resistor layer covers the first buffer layer at least. The melting point of the first buffer layer is respectively larger than the sintering temperature of the thermal resistor layer and the melting point of the first electrode. And the first electrode is electrically connected with the thermal resistor layer by the first buffer layer. The second electrode and the first electrode are arranged with an interval and are electrically connected with the thermal resistor layer. The electrical feature of the thermal resistor chip is perfect. In addition, a manufacturing method of the thermal resistor chip is also provided.
Description
Technical field
The invention relates to a kind of thermistor chip and manufacture method thereof, and particularly relevant for a kind of thermistor chip (thermistor chip) and manufacture method thereof with resilient coating (buffer layer).
Background technology
The resistance value of thermistor chip can vary with temperature and change.Thermistor chip is according to the temperature variant situation of its resistance value, mainly can be divided into negative temperature coefficient (the negativetemperature coefficient that resistance value and temperature are inversely proportional to and change, NTC) thermistor chip and resistance value are directly proportional with temperature, and (positive temperature coefficient, PTC) thermistor chip is two kinds for the positive temperature coefficient that changes.
Please refer to Fig. 1, traditional thermistor chip 100 comprises a substrate (substrate) 110, one first electrode (electrode) 120, one second electrode 130, a thermal resistor layer (thermistor layer) 140, two outer electrodes (external electrode) 150, two backplates (back electrode) 160 and one protective layers (protective layer) 170.Wherein, substrate 110 have first surface 112, with respect to the second surface 114 of first surface 112 and connect the both ends of the surface 116 of first surface 112 and second surface 114.First electrode 120 and second electrode 130 are disposed on the first surface 112 of substrate 110, these backplates 160 are disposed on the second surface 114 of substrate 110, and thermal resistor layer 140 is disposed on the first surface 112 and electrically connects first electrode 120 and second electrode 130.Thermal resistor layer 140 cover parts first electrode 120 and part second electrode 130.Protective layer 170 cover parts first electrode 120, part second electrode 130 and thermal resistor layer 140.These outer electrodes 150 are extended through wherein an end face 116 by first electrode 120 on the first surface 112 and second electrode 130 respectively and are electrically connected to these backplates 160 on the second surface 114.
Yet the thermistor chip that tradition adopts thick film processing procedure (thick film process) and sintering process (sinteringprocess) to make need be through printing and sintering step repeatedly in its manufacture process.Because the material of first electrode 120 and second electrode 130 is a silver, and the sintering temperature (sintering temperature) when silver point too forms near thermal resistor layer 140, so thermal resistor layer 140 is when forming via sintering process, first electrode 120 and second electrode 130 can produce silver migration (sliver migrate) and silver is partly diffused in the thermal resistor layer 140, and causing influences temperature variant character of resistance value and whole electrical performance (electrical performance).
At present with the thickness T 1 that increases thermal resistor layer 140 (that is thermal resistor layer 140 is away from the distance between the first surface 112 of one the 3rd surface 142 of substrate 110 and substrate 110) or change the material of first electrode 120 and second electrode 130 into silver palladium alloy and improve the problems referred to above.Yet the thickness T 1 that increases thermal resistor layer 140 will increase the volume of thermistor chip 100.In addition, suppress the silver palladium alloy that the silver migration is adopted for reaching, the percentage by weight of palladium needs 15%～30% approximately in first electrode 120 and second electrode 130, and the material cost of palladium is comparatively expensive, so whole cost is increased.
Summary of the invention
A purpose of the present invention provides a kind of thermistor chip, and its electrical performance is preferable.
Another object of the present invention provides a kind of thermistor chip, and its volume is little and cost is low.
Another purpose of the present invention provides a kind of manufacture method of thermistor chip, and the electrical performance of the thermistor chip that it manufactures is preferable.
A further object of the present invention provides a kind of manufacture method of thermistor chip, and the volume of the thermistor chip that it manufactures is little and cost is low.
The present invention proposes a kind of thermistor chip, and it comprises a substrate, one first electrode, one second electrode, a thermal resistor layer and one first resilient coating.Substrate has a first surface.First electrode is disposed on the first surface.First resilient coating covers to small part first electrode, and thermal resistor layer covers first resilient coating at least.The fusing point of first resilient coating is respectively greater than the sintering temperature of thermal resistor layer and the fusing point of first electrode, and first electrode electrically connects by first resilient coating and thermal resistor layer.Second electrode and the first electrode gap setting and electrically connect with thermal resistor layer.
In an embodiment of the present invention, the fusing point of above-mentioned first resilient coating is more than or equal to 1400 degree Celsius.
In an embodiment of the present invention, the material of above-mentioned first resilient coating comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal.
In an embodiment of the present invention, the material of above-mentioned first electrode comprises silver, and the percentage by weight of silver is more than 85% in first electrode.
In an embodiment of the present invention, the thickness of above-mentioned first resilient coating is between 1000 dusts and 3000 dusts.
In an embodiment of the present invention, above-mentioned thermal resistor layer is to utilize the thick film processing procedure to form, and first resilient coating is to utilize thin film manufacture process or thick film processing procedure to form.
In an embodiment of the present invention, the sintering temperature of above-mentioned thermal resistor layer is between 850 degree Celsius and 950 degree Celsius.
In an embodiment of the present invention; above-mentioned thermistor chip also comprises a glassivation (glassprotective layer) and a polymer protective layer (polymer protective layer); wherein glassivation covers thermal resistor layer at least, and polymer protective layer is the cover glass protective layer at least.
In an embodiment of the present invention, above-mentioned first electrode directly is disposed on this first surface, one end of first resilient coating directly is covered on part first electrode, the other end of first resilient coating extends on the first surface of direct cover part, one end of thermal resistor layer directly covers on first resilient coating, the other end of thermal resistor layer extends to and directly is covered on the part first surface, one end of second electrode directly is covered on the part thermal resistor layer, and the other end of second electrode extends to and directly is covered on the part first surface.
In an embodiment of the present invention, above-mentioned thermistor chip also comprises a third electrode, is disposed in the thermal resistor layer.In addition, thermistor chip also comprises a three buffer layer, cover to the small part third electrode, and the fusing point of three buffer layer is respectively greater than the sintering temperature of this thermal resistor layer and the fusing point of this third electrode.In addition, the material of three buffer layer comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal, and the material of third electrode comprises silver.
In an embodiment of the present invention, above-mentioned first electrode and second electrode directly are disposed on the first surface of substrate respectively.In addition, thermistor chip also comprises one second resilient coating, covers to small part second electrode.Thermal resistor layer covers second resilient coating at least, and the fusing point of second resilient coating is respectively greater than the sintering temperature of thermal resistor layer and the fusing point of second electrode.In addition, the material of second resilient coating comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal that the material of this second electrode comprises silver.Moreover thermistor chip also comprises one the 4th electrode, an end cover part thermal resistor layer of the 4th electrode, and the other end of the 4th electrode extends to cover part second electrode.
In an embodiment of the present invention, above-mentioned thermistor chip also comprises one the 4th electrode.First electrode directly is disposed on the centre position of this first surface, and second electrode and the 4th electrode gap are arranged at the two ends of thermal resistor layer.One end of second electrode is covered on the part thermistor, and the other end of second electrode extends to and is covered in first surface.One end cover part thermal resistor layer of the 4th electrode, and the other end of the 4th electrode extends to and is covered in first surface.
The present invention proposes a kind of manufacture method of thermistor chip, and it comprises the following steps.At first, form one first electrode on a first surface of a substrate.Then, form one first resilient coating to cover to small part first electrode.Afterwards, utilize thick film processing procedure and sintering process and form a thermal resistor layer to cover first resilient coating at least.The fusing point of first resilient coating is respectively greater than the sintering temperature of thermal resistor layer and the fusing point of first electrode, and first electrode electrically connects by first resilient coating and thermal resistor layer.Then, form one second electrode on first surface.Second electrode and the first electrode gap setting and electrically connect with thermal resistor layer.
In an embodiment of the present invention, the fusing point of above-mentioned first resilient coating is more than or equal to 1400 degree Celsius.
In an embodiment of the present invention, above-mentioned first resilient coating is to utilize thin film manufacture process and form.
In an embodiment of the present invention, the sintering temperature of above-mentioned thermal resistor layer is between 850 degree Celsius and 950 degree Celsius.
Because configurable between one of them of thermal resistor layer and these electrodes have a resilient coating, and the fusing point of resilient coating is respectively greater than the sintering temperature and the above-mentioned layer fusing point of institute's coated electrode that be cushioned of thermal resistor layer, so thermal resistor layer is when forming via sintering process, resilient coating can avoid the above-mentioned layer electrode that is covered that be cushioned to migrate in the thermal resistor layer.Therefore, the temperature variant character of the resistance value of thermistor chip of the present invention will be difficult for being affected and still can satisfy designer's design requirement in advance.In other words, the electrical performance of thermistor chip of the present invention is preferable.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 illustrates the generalized section of traditional a kind of thermistor chip.
Fig. 2 A illustrates the generalized section of a kind of thermistor chip of first embodiment of the invention.
Fig. 2 B illustrates the equivalent circuit diagram of the thermistor chip of Fig. 2 A.
Fig. 3 A to Fig. 3 F illustrates the schematic flow sheet of the thermistor chip of shop drawings 2A.
Fig. 4 A illustrates the generalized section of a kind of thermistor chip of second embodiment of the invention.
Fig. 4 B illustrates the equivalent circuit diagram of the thermistor chip of Fig. 4 A.
Fig. 5 A illustrates the generalized section of a kind of thermistor chip of third embodiment of the invention.
Fig. 5 B illustrates the equivalent circuit diagram of the thermistor chip of Fig. 5 A.
Fig. 6 A to Fig. 6 D illustrates the schematic flow sheet of the thermistor chip of shop drawings 5A.
Fig. 7 A illustrates the generalized section of a kind of thermistor chip of fourth embodiment of the invention.
Fig. 7 B illustrates the equivalent circuit diagram of the thermistor chip of Fig. 7 A.
Fig. 8 A illustrates the generalized section of a kind of thermistor chip of fifth embodiment of the invention.
Fig. 8 B illustrates the equivalent circuit diagram of the thermistor chip of Fig. 8 A.
Embodiment
[first embodiment]
Please refer to Fig. 2 A, the thermistor chip 200 of first embodiment of the invention comprises a substrate 210, one first electrode 220, one second electrode 230, a thermal resistor layer 240 and one first resilient coating 250.Substrate 210 has a first surface 212.First electrode 220, second electrode 230 are disposed on the first surface 212 of substrate 210 with thermal resistor layer 240.First electrode 220 and second electrode 230 are provided with at interval.First electrode 220 electrically connects by first resilient coating 250 and thermal resistor layer 240, and second electrode 230 electrically connects with thermal resistor layer 240.First resilient coating 250 covers to small part first electrode 220, and thermal resistor layer 240 covers first resilient coating 250 at least.The fusing point of first resilient coating 250 is respectively greater than the sintering temperature of thermal resistor layer 240 and the fusing point of first electrode 220.Please refer to Fig. 2 B, the equivalent electric circuit of the thermistor chip 200 of first embodiment is the equivalent electric circuit with a resistance R shown in Fig. 2 B.
Refer again to Fig. 2 A, in the present embodiment, first electrode 220 directly is disposed on the first surface 212, and an end of first resilient coating 250 directly is covered on part first electrode 220, and the other end of first resilient coating 250 extends on the direct covering part first surface 212.One end of thermal resistor layer 240 directly covers on first resilient coating 250, and the other end of thermal resistor layer 240 extends to and directly is covered on the part first surface 212.One end of second electrode 230 directly is covered on the part thermal resistor layer 240, and the other end of second electrode 230 extends to and directly is covered on the part first surface 212.In other words, first resilient coating 250 is disposed between first electrode 220 and the thermal resistor layer 240, and thermal resistor layer 240 is disposed between first electrode 220 and second electrode 230.
Because first resilient coating 250 is disposed between the thermal resistor layer 240 and first electrode 220, and the fusing point of first resilient coating 250 is respectively greater than the sintering temperature of thermal resistor layer 240 and the fusing point of first electrode 220, so thermal resistor layer 240 is when forming via sintering process (seeing for details following), first resilient coating 250 can be avoided first electrode 220 to produce migration and diffuse in the thermal resistor layer 240.Therefore, the temperature variant character of the resistance value of thermistor chip 200 will be difficult for being affected and still can satisfy designer's design requirement in advance, make that the electrical performance of thermistor chip 200 is preferable.And, to compare with conventional art, the thickness T 2 of thermal resistor layer 240 (that is thermal resistor layer 240 is away from the distance between the first surface 212 of the 3rd surperficial 242 and substrate 210 of substrate 210) can be thinner.Therefore, the volume of thermistor chip 200 can be less.And the percentage by weight of palladium can be less than 15%～30% of conventional art exposure in the material of first electrode 220, even need not use silver palladium alloy.Therefore, the material cost of thermistor chip 200 can be lower.
In the present embodiment, the material of first electrode 220 comprises silver, and the percentage by weight of silver for example is more than 85% in first electrode 220, and the material of substrate comprises insulation materials such as glass or aluminium oxide.The sintering temperature of thermal resistor layer 240 can be between 850 degree Celsius be spent with Celsius 950, and the material of thermal resistor layer 240 comprises manganese, cobalt, nickel, copper or ruthenic oxide.In addition, the fusing point of first resilient coating 250 can be more than or equal to 1400 degree Celsius, and the material of first resilient coating 250 comprises nickel (Ni), chromium (Pt), ruthenium (Ru) or comprises the alloy of above-mentioned at least a kind of metal.
The thermistor chip 200 of present embodiment also comprises a glassivation 260, a polymer protective layer 270, two backplates 280 and two outer electrodes 290.Glassivation 260 cover parts second electrode 230, first resilient coating 250, thermal resistor layer 240 and part first electrode 220, and polymer protective layer 270 cover glass protective layer 260 at least.Because the radiating rate that provides of substrate 210 is fast, the B value instability of thermistor chip 200 can be caused usually, and the radiating rate of substrate 210 can be reduced by the setting of glassivation 260, make the unsettled phenomenon of B value of thermistor chip 200 to improve.
In the present embodiment, substrate 210 also has a second surface 214 and two opposite end faces 216.First surface 212 is with respect to second surface 214, and each end face 216 connects first surface 212 and second surface 214.These backplate 280 arranged spaced are on second surface 214, and these outer electrodes 290 are disposed at respectively on these end faces 216.In addition, one of these outer electrodes 290 electrically connect first electrode 220 and one of these backplates 280, and another of these outer electrodes 290 electrically connects second electrode 230 and these backplates 280 another.
Below explain for the manufacture method of thermistor chip 200.At first, please refer to Fig. 3 A, utilize printing process or sputter process to form first electrode 220 on the first surface 212 of substrate 210.Then, please refer to Fig. 3 B, utilize thin film manufacture process, sputter (Sputter) processing procedure for example, form first resilient coating 250 on first surface 212, one end of the resilient coating 250 of winning directly is covered on part first electrode 220, and the other end of first resilient coating 250 extend on the direct cover part first surface 212.In the present embodiment, the THICKNESS CONTROL of first resilient coating 250 is increased in being about 1000～3000 dusts, making the unlikely volume of thermistor chip 200 that causes of being provided with of resilient coating 250 of winning by thin film manufacture process.
Afterwards, please refer to Fig. 3 C, utilize thick film processing procedure (for example printing process) to form thermal resistor layer 240 with sintering process on first resilient coating 250 and part first surface 212, make an end of thermal resistor layer 240 directly cover on first resilient coating 250, and thermal resistor layer 240 other ends extend to and directly are covered on the part first surface 212.In this mandatory declaration is that thermal resistor layer 240 can form by sintering process sintering thermistor material by printing thermal resistance material in advance on first resilient coating 250 and part first surface 212 again.What emphasize once more is, because the fusing point of first resilient coating 250 is respectively greater than the sintering temperature of thermal resistor layer 240 and the fusing point of first electrode 220, so thermal resistor layer 240 is when forming via above-mentioned sintering process, first resilient coating 250 can be avoided first electrode 220 to produce migration and diffuse in the thermal resistor layer 240.
Then, please refer to Fig. 3 D, utilize printing or sputter process to form second electrode 230 on part thermal resistor layer 240 and part first surface 212, make an end of second electrode 230 directly be covered in partly on the thermal resistor layer 240, and the other end of second electrode 230 extend to and directly is covered on the part first surface 212.So far, thermistor chip 200 is finished basically.
Yet, after forming second electrode 230 shown in Fig. 3 D, also can form glassivation 260, polymer protective layer 270, these backplates 280 and these outer electrodes 290.Then, please refer to Fig. 3 E, utilize printing process to form glassivation 260 with cover part second electrode 230, first resilient coating 250, thermal resistor layer 240 and part first electrode 220.Then, utilize printing process to form polymer protective layer 270 with cover glass protective layer 260 at least.Afterwards, please refer to Fig. 3 F, utilize printing process to form two backplates 280 on the second surface 214 of substrate 210.Then, utilize sputter or barrel plating processing procedure to form two outer electrodes 290 respectively on the both ends of the surface 216 of substrate 210, make one of them of these outer electrodes 290 electrically connect one of them of first electrode 220 and these backplates 280, and these outer electrodes 290 wherein another electrically connect second electrode 230 and these backplates 280 wherein another.What one of value was carried is that these backplates 280 also can be gone forward in the first surface 212 of substrate 210 in forming first electrode 220, utilize printing process to be formed on the second surface 214 of substrate 210 earlier.
[second embodiment]
Please refer to Fig. 4 A, the difference of the second embodiment of the invention and first embodiment is, first electrode 320 of the thermistor chip 300 of second embodiment and the configuration mode of second electrode 330 are different, and thermistor chip 300 also comprises second resilient coating 350 '.In detail, first electrode 320 and second electrode 330 can directly be disposed at respectively on the first surface 312 of substrate 310, and first resilient coating 350 and second resilient coating 350 ' cover respectively to small part first electrode 320 with to small part second electrode 330.Thermal resistor layer 340 covers first resilient coating 350, part first surface 312 and second resilient coating 350 '.Please refer to Fig. 4 B, the equivalent electric circuit of the thermistor chip 300 of second embodiment is the equivalent electric circuit with a resistance R shown in Fig. 4 B.
The fusing point of first resilient coating 350 is respectively greater than the sintering temperature of thermal resistor layer 340 and the fusing point of first electrode 320, and the fusing point of second resilient coating 350 ' is respectively greater than the sintering temperature of thermal resistor layer 340 and the fusing point of second electrode 330.The material of first resilient coating 350 and second resilient coating 350 ' comprises nickel, chromium, ruthenium or comprises the alloy of above-mentioned at least a kind of metal.In addition, first electrode 320 electrically connects by first resilient coating 350 and thermal resistor layer 340, and second electrode 330 connects by second resilient coating 350 ' and electrically connects with thermal resistor layer 340.The material of first electrode 320 and second electrode 330 comprises silver, and the percentage by weight of silver is more than 85%.
Because the configuration of first resilient coating 350 and second resilient coating 350 ', in the time of can avoiding thermal resistor layer 340 to carry out sintering process, first resilient coating 350 and second resilient coating 350 ' produce migration and diffuse in the thermal resistor layer 340, use, can make the electrical performance of thermistor chip 300 preferable, volume can be less and material cost can be lower.
[the 3rd embodiment]
Please refer to Fig. 5 A, the difference of the third embodiment of the invention and first embodiment is, the thermistor chip 400 of the 3rd embodiment also comprises a third electrode E and a three buffer layer B, third electrode E is disposed in the thermal resistor layer 440, and first electrode 420 is electrically connected to electrode E by first resilient coating 450 with thermal resistor layer 440.Three buffer layer B covers to small part third electrode E, and the fusing point of three buffer layer B is respectively greater than the sintering temperature of thermal resistor layer 440 and the fusing point of third electrode E.Please refer to Fig. 5 B, the equivalent electric circuit of the thermistor chip 400 of the 3rd embodiment is the equivalent electric circuit with four resistance R 1, R2, R3 and R4 shown in Fig. 5 B.
Below explain for the manufacture method of thermistor chip 400.At first, please refer to Fig. 6 A, form first electrode 420 on the first surface 412 of substrate 410.Then, form first resilient coating 450 on first surface 412, make resilient coating 450 cover parts first electrode 420 of winning.Then, please refer to Fig. 6 B, form a thermal resistor layer 440 ' (sub-thermistor layer) on the part first surface 412 and first resilient coating 450, make time thermal resistor layer 440 ' cover resilient coating 450 at least.
Afterwards, please refer to Fig. 6 C, form third electrode E on inferior thermal resistor layer 440 '.Afterwards, form three buffer layer B to cover to small part third electrode E.Then, form another time thermal resistor layer 440 " on inferior thermal resistor layer 440 ', to cover three buffer layer B.Inferior thermal resistor layer 440 ' and time thermal resistor layer 440 " formation (compose) thermal resistor layer 440.In other words, with regard to the step that Fig. 6 B and Fig. 6 C are illustrated, form thermal resistor layer 440 during, third electrode E imbeds (embed) in thermal resistor layer 440.In addition, the material of three buffer layer B comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal that the material of third electrode E comprises silver.
This mandatory declaration is because third electrode E only can be through forming time thermal resistor layer 440 " required sintering process, so electrode E migrates to time thermal resistor layer 440 " but the phenomenon Be Controlled.Therefore, the designer also can be after the step of the formation electrode E shown in Fig. 6 B, omits the step that forms three buffer layer B, makes the inferior thermal resistor layer 440 shown in Fig. 6 C " at least directly cover third electrode E, but said circumstances does not illustrate with drawing.
Then, please refer to Fig. 6 D, form second electrode 430, but make second electrode, 430 cover part thermal resistor layer 440 and part first surfaces 412 on the part first surface 412 and on the part thermal resistor layer 440.Then, form glassivation 460, polymer protective layer 470, these backplates 480 and these outer electrodes 490, the generation type of above-mentioned these members can be with reference to Fig. 3 E and relevant narration of first embodiment, so repeat no more in this.
[the 4th embodiment]
Please refer to Fig. 7 A, the thermistor chip 500 of fourth embodiment of the invention and the difference of second embodiment are: thermistor chip 500 also comprises third electrode E1 and the 4th electrode E1 '.First electrode 520 and second electrode 530 are disposed on the first surface 512 of substrate 510.First resilient coating 550 covers to small part first electrode 520, and second resilient coating 550 ' covers to small part second electrode 530.Thermal resistor layer 540 covers first resilient coating 550, second resilient coating 550 ' and part first surface 512.Third electrode E1 is disposed in the thermal resistor layer 540, and the other end of end cover part thermal resistor layer 540, the four electrode E1 ' of the 4th electrode E1 ' extends to cover part second electrode 520.Please refer to Fig. 7 B, the equivalent electric circuit of the thermistor chip 500 of the 4th embodiment is the equivalent electric circuit with five resistance R 1, R2, R3, R4 and R5 shown in Fig. 7 B.
Because the configuration of first resilient coating 550 and second resilient coating 550 ', in the time of can avoiding thermal resistor layer 540 to carry out sintering process, first resilient coating 550 and second resilient coating 550 ' produce migration and diffuse in the thermal resistor layer 540, use, can make the electrical performance of thermistor chip 500 preferable, volume can be less and material cost can be lower.
[the 5th embodiment]
Please refer to Fig. 8 A, the thermistor chip 600 of fifth embodiment of the invention comprises first electrode 620, second electrode 630, third electrode E2 and the 4th electrode E2 '.Second electrode 630 and the 4th electrode E2 ' are arranged at intervals at the two ends of thermal resistor layer 640.First electrode 620 directly is disposed on the centre position of substrate 610 first surfaces 612, and first resilient coating 650 covers first electrode 620.Thermal resistor layer 640 covers on the part first surface 612 of first resilient coating 650 and first electrode, 620 both sides.Third electrode E2 is disposed in the thermal resistor layer 640.One end of second electrode 630 is covered on the part thermistor 640, and the other end of second electrode 630 extends to and is covered in first surface 612.The other end of end cover part thermal resistor layer 640, the four electrode E2 ' of the 4th electrode E2 ' extends to and is covered in first surface 612.Please refer to Fig. 8 B, the equivalent electric circuit of the thermistor chip 600 of the 5th embodiment is the equivalent electric circuit with four resistance R 1, R2, R3 and R4 shown in Fig. 8 B.
In sum, thermistor chip of the present invention has following one of them advantage at least:
One, owing to configurable between one of them of thermal resistor layer and these electrodes a resilient coating arranged, and the fusing point of resilient coating is respectively greater than the sintering temperature of thermal resistor layer and an above-mentioned fusing point that is cushioned the electrode that layer covered, so thermal resistor layer is when forming via sintering process, resilient coating can avoid the above-mentioned electrode that covered of layer that be cushioned to produce migration and diffuse in the thermal resistor layer.Therefore, the temperature variant character of the resistance value of thermistor chip of the present invention will be difficult for being affected and still can satisfy designer's design requirement in advance.In other words, the electrical performance of thermistor chip of the present invention is preferable.
Two, can avoid the above-mentioned electrode that covered of layer that be cushioned and produce migration and diffuse in the thermal resistor layer owing to resilient coating, so compare with conventional art, the thickness of thermal resistor layer of the present invention can be thinner.Therefore, the volume of thermistor chip of the present invention can be less.
Three, can avoid the above-mentioned electrode that covered of layer that be cushioned and produce migration and diffuse in the thermal resistor layer owing to resilient coating, so compare with conventional art, the percentage by weight of palladium can be less than 15%～30% in the material of electrode of the present invention, even need not use silver palladium alloy.Therefore, the material cost of thermistor chip of the present invention can be lower.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (21)
1. thermistor chip comprises:
One substrate has a first surface;
One first electrode is disposed on this first surface;
One first resilient coating covers to this first electrode of small part; And
One thermal resistor layer covers this first resilient coating at least, and wherein the fusing point of this first resilient coating is respectively greater than the sintering temperature of this thermal resistor layer and the fusing point of this first electrode, and this first electrode is by this first resilient coating and the electric connection of this thermal resistor layer; And
One second electrode electrically connects with this first electrode gap setting and with this thermal resistor layer.
2. thermistor chip as claimed in claim 1 is characterized in that, the fusing point of this first resilient coating is more than or equal to 1400 degree Celsius.
3. thermistor chip as claimed in claim 1 is characterized in that, the material of this first resilient coating comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal.
4. thermistor chip as claimed in claim 1 is characterized in that the material of this first electrode comprises silver, and the percentage by weight of silver is more than 85% in first electrode.
5. thermistor chip as claimed in claim 1 is characterized in that, the thickness of this first resilient coating is between 1000 dusts and 3000 dusts.
6. thermistor chip as claimed in claim 1 is characterized in that, this thermal resistor layer is to utilize the thick film processing procedure to form, and this first resilient coating is to utilize thin film manufacture process to form.
7. thermistor chip as claimed in claim 1 is characterized in that, the sintering temperature of this thermal resistor layer is between 850 degree Celsius and 950 degree Celsius.
8. thermistor chip as claimed in claim 1 is characterized in that, also comprises a glassivation and a polymer protective layer, and wherein this glassivation covers this thermal resistor layer at least, and this polymer protective layer covers this glassivation at least.
9. thermistor chip as claimed in claim 1, it is characterized in that, this first electrode directly is disposed on this first surface, one end of this first resilient coating directly is covered on this first electrode of part, the other end of this first resilient coating extends on this first surface of direct cover part, one end of this thermal resistor layer directly covers on this first resilient coating, the other end of this thermal resistor layer extends to and directly is covered on this first surface of part, one end of this second electrode directly be covered in the part this thermal resistor layer on, and the other end of this second electrode extend to directly be covered in the part this first surface on.
10. thermistor chip as claimed in claim 1 is characterized in that, also comprises a third electrode, is disposed in this thermal resistor layer.
11. thermistor chip as claimed in claim 10 is characterized in that, also comprises a three buffer layer, cover to this third electrode of small part, and the fusing point of this three buffer layer is respectively greater than the sintering temperature of this thermal resistor layer and the fusing point of this third electrode.
12. thermistor chip as claimed in claim 11 is characterized in that, the material of this three buffer layer comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal, and the material of this third electrode comprises silver.
13. thermistor chip as claimed in claim 1 is characterized in that, this first electrode and this second electrode directly are disposed at respectively on this first surface of this substrate.
14. thermistor chip as claimed in claim 13, it is characterized in that, also comprise one second resilient coating, cover to this second electrode of small part, wherein this thermal resistor layer covers this second resilient coating at least, and the fusing point of this second resilient coating is respectively greater than the sintering temperature of this thermal resistor layer and the fusing point of this second electrode.
15. thermistor chip as claimed in claim 14 is characterized in that, the material of this second resilient coating comprises nickel, platinum, ruthenium or comprises the alloy of above-mentioned at least a kind of metal that the material of this second electrode comprises silver.
16. thermistor chip as claimed in claim 13 is characterized in that, also comprises one the 4th electrode, this thermal resistor layer of end cover part of the 4th electrode wherein, and the other end of the 4th electrode extends to this second electrode of cover part.
17. thermistor chip as claimed in claim 1, it is characterized in that, also comprise one the 4th electrode, wherein this first electrode directly is disposed on the centre position of this first surface, this second electrode and the 4th electrode gap are arranged at the two ends of this thermal resistor layer, one end of this second electrode is covered on this thermistor of part, the other end of this second electrode extends to and is covered in this first surface, this thermal resistor layer of end cover part of the 4th electrode, and the other end of the 4th electrode extends to and is covered in this first surface.
18. the manufacture method of a thermistor chip comprises:
Form one first electrode on a first surface of a substrate;
Form one first resilient coating to cover to this first electrode of small part;
Utilize thick film processing procedure and sintering process and form a thermal resistor layer to cover this first resilient coating at least, wherein the fusing point of this first resilient coating is respectively greater than the sintering temperature of this thermal resistor layer and the fusing point of this first electrode, and this first electrode is by this first resilient coating and the electric connection of this thermal resistor layer; And
Form one second electrode on this first surface, wherein this second electrode and this first electrode gap setting and electrically connect with this thermal resistor layer.
19. the manufacture method of thermistor chip as claimed in claim 18 is characterized in that, the fusing point of this first resilient coating is more than or equal to 1400 degree Celsius.
20. the manufacture method of thermistor chip as claimed in claim 18 is characterized in that, this first resilient coating is to utilize thin film manufacture process and form.
21. the manufacture method of thermistor chip as claimed in claim 18 is characterized in that, the sintering temperature of this thermal resistor layer is between 850 degree Celsius and 950 degree Celsius.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101529525A CN101399100A (en) | 2007-09-25 | 2007-09-25 | Low-resistance thermosensitive resistor and its making method thermister chip and method for manufacturing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101529525A CN101399100A (en) | 2007-09-25 | 2007-09-25 | Low-resistance thermosensitive resistor and its making method thermister chip and method for manufacturing same |
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| CN101399100A true CN101399100A (en) | 2009-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007101529525A Pending CN101399100A (en) | 2007-09-25 | 2007-09-25 | Low-resistance thermosensitive resistor and its making method thermister chip and method for manufacturing same |
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| CN (1) | CN101399100A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102263396A (en) * | 2010-05-24 | 2011-11-30 | 乾坤科技股份有限公司 | Protecting component and electronic device |
| US8472158B2 (en) | 2009-09-04 | 2013-06-25 | Cyntec Co., Ltd. | Protective device |
| CN102034655B (en) * | 2009-09-25 | 2014-02-12 | 乾坤科技股份有限公司 | Protection element |
| US9025295B2 (en) | 2009-09-04 | 2015-05-05 | Cyntec Co., Ltd. | Protective device and protective module |
| CN103050204B (en) * | 2012-12-19 | 2015-08-19 | 中国振华集团云科电子有限公司 | Chip-type linear positive temperature coefficient thermistor |
| US9336978B2 (en) | 2009-09-04 | 2016-05-10 | Cyntec Co., Ltd. | Protective device |
| CN112997261A (en) * | 2018-08-22 | 2021-06-18 | 上海利韬电子有限公司 | Surface movable positive temperature coefficient device and manufacturing method thereof |
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2007
- 2007-09-25 CN CNA2007101529525A patent/CN101399100A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8472158B2 (en) | 2009-09-04 | 2013-06-25 | Cyntec Co., Ltd. | Protective device |
| US8675333B2 (en) | 2009-09-04 | 2014-03-18 | Cyntec Co., Ltd. | Protective device |
| US9025295B2 (en) | 2009-09-04 | 2015-05-05 | Cyntec Co., Ltd. | Protective device and protective module |
| US9336978B2 (en) | 2009-09-04 | 2016-05-10 | Cyntec Co., Ltd. | Protective device |
| CN102034655B (en) * | 2009-09-25 | 2014-02-12 | 乾坤科技股份有限公司 | Protection element |
| CN102263396A (en) * | 2010-05-24 | 2011-11-30 | 乾坤科技股份有限公司 | Protecting component and electronic device |
| CN102263396B (en) * | 2010-05-24 | 2014-05-07 | 乾坤科技股份有限公司 | Protecting component and electronic device |
| CN103050204B (en) * | 2012-12-19 | 2015-08-19 | 中国振华集团云科电子有限公司 | Chip-type linear positive temperature coefficient thermistor |
| CN112997261A (en) * | 2018-08-22 | 2021-06-18 | 上海利韬电子有限公司 | Surface movable positive temperature coefficient device and manufacturing method thereof |
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