CN208674097U - A kind of power device - Google Patents
A kind of power device Download PDFInfo
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- CN208674097U CN208674097U CN201821312623.2U CN201821312623U CN208674097U CN 208674097 U CN208674097 U CN 208674097U CN 201821312623 U CN201821312623 U CN 201821312623U CN 208674097 U CN208674097 U CN 208674097U
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Abstract
The utility model discloses a kind of power devices, it includes chip, form metal layer on the chip, passivation layer formed on the metal layer, encapsulated layer, sensor and lead, sensor window and multiple routing windows are offered on the passivation layer, the sensor is set in the sensor window and is electrically connected with the metal layer, the encapsulated layer includes being formed in the passivation layer, it waterproof layer on the routing window and is formed in the sensor window and the polyimide layer of the covering sensor, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.It can protect the sensor on power device from damage.
Description
Technical field
The utility model relates to power semiconductor chip package technology more particularly to a kind of power device and its encapsulation sides
Method.
Background technique
With extensive use of the semiconductor technology in industrial production automation, computer technology, mechanics of communication, Yi Ji electricity
The complexity of sub- equipment continues to increase, also higher and higher for the reliability requirement of power device.In the various encapsulation of early stage
In form, the air-tight packagings reliability highest such as ceramics.And the Plastic Package of early stage is since steam diffusion problem can solve, it can
It is difficult to compared with air-tight packaging by property.With continuously improving for material and technique, currently, the reliability of Plastic Package is certain
Aspect oneself be close to or up to the level of the air-tight packagings such as ceramics.
When encapsulating the chip of belt sensor, selective plastic package method common at present, sensor window is without plastic packaging, core
Remaining region of piece is protected using plastic packaging waterproof material, can be caused to damage to sensor in this way, be influenced transducer sensitivity and effect
Rate, and there is no protection materials on sensor, the Performance And Reliability of sensor can be impacted during use.
Utility model content
For overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of power devices, can protect
Sensor on power device is from damage;
The purpose of this utility model is implemented with the following technical solutions:
A kind of power device, it is characterised in that: it includes chip, forms metal layer on the chip, is formed in institute
Passivation layer, encapsulated layer, sensor and the lead on metal layer are stated, offers sensor window and multiple routings on the passivation layer
Window, the sensor are set in the sensor window and are electrically connected with the metal layer, and the encapsulated layer includes being formed
It waterproof layer on the passivation layer, the routing window and is formed in the sensor window and the covering sensor
Polyimide layer, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.
Preferably, the waterproof layer is resin layer.
Preferably, the lead is aluminum steel.
Preferably, the sensor is optical sensor.
Preferably, there are two the routing windows, the sensor window is arranged between two routing windows.
Compared with prior art, the utility model has the beneficial effects that:
It is covered with polyimide layer in its sensor window, which can protect the biography in the sensor window
Sensor encapsulation and using when be not damaged, to protect the performance of sensor.In addition, not damaging sensing when its encapsulation
Device keeps the packaging method of power device simple without repairing to sensor.
Detailed description of the invention
Fig. 1 is the sectional view of the power device of the utility model;
Fig. 2 is the flow chart of the power device package method in Fig. 1;
Fig. 3 is the process flow diagram of the power device package method in Fig. 1.
In figure:
1. power device;10, chip;20, metal layer;30, passivation layer;31, routing window;32, sensor window;40,
Encapsulated layer;41, polyimide layer;42, silicon oxide layer;43, lead;44, waterproof layer;
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to the utility model:
As shown in Figure 1, a kind of power device 1 comprising chip 10, the metal layer 20 being formed on the chip 10, shape
At passivation layer 30, encapsulated layer 40, sensor (not shown) and the lead 43 on the metal layer 20, opened on the passivation layer 30
Equipped with sensor window 32 and multiple routing windows 31, the sensor be set in the sensor window 32 and with the gold
Belong to layer 20 to be electrically connected, the encapsulated layer 40 includes being formed in the passivation layer 30,44 and of waterproof layer on the routing window 31
It is formed in the sensor window 32 and the polyimide layer 41 of the covering sensor, the lead 43 passes through the waterproof
Layer 44 is electrically connected in the routing window 31 with the metal layer 20.
In the above-described embodiment, it is covered with polyimide layer 41 in the sensor window 32, the polyimide layer 41
Can protect sensor in the sensor window 32 encapsulation and using when be not damaged, to protect the property of sensor
Energy;Its waterproof layer 44 can increase the waterproof performance at routing window 31, and prevent chip 10 and metal layer 20 from intaking short-circuit and damaging
It is bad.
As Figure 2-3, it is preferred that the waterproof layer 44 is the resin layer of performance stabilization, price material benefit;The lead 43
For the aluminum steel to conduct electricity very well.The sensor is optical sensor, because of 41 energy light transmission of polyimide layer, polyimide layer
Optical sensor under 41 not will receive the influence of polyimide layer 41.There are two the routing windows 31, the sensor window
32 are arranged between two routing windows 31, installation that is beautiful and being convenient for lead 43.The polyimide layer 41 is arranged described
It is beautiful and be conducive to optical sensor and receive light among waterproof layer 44.
It is to be appreciated that the waterproof layer 44 can also be rubber or silica etc., the lead 43 can also be copper wire etc..
As Figure 2-3, the invention also discloses the packaging methods of above-mentioned power device 1, comprising steps of
A, chip 10, sensor and lead 43 are provided, a metal layer 20 is formed on the chip 10, in the metal
A passivation layer 30 is formed on layer 20;
B, sensor window 32 and routing window 31 are formed on the passivation layer 30, then the sensor is arranged in institute
It states in sensor window 32;
C, polyimide layer 41 is prepared on the routing window 31, the sensor window 32 and the passivation layer 30;
D, silicon oxide layer 42 is prepared on the polyimide layer 41;
E, the routing window 31 and silicon oxide layer 42 and polyimide layer 41 on the passivation layer 30 are removed;
F, the lead 43 is connect with the metal layer 20 on the routing window 31;
G, waterproof layer 44 is prepared on the routing window 31, the passivation layer 30 and the silicon oxide layer 20;
H, the waterproof layer 44 and silicon oxide layer 20 on the polyimide layer 41 are removed.
In the step E of above embodiment, the reflectivity of the passivation layer 30 and 31 light of routing window is high, so
Polyimide layer 41 on the passivation layer 30 and routing window 31 completes light exposure required for exposing and is less than sensor window
The light exposure of polyimide layer 41 on mouth 32 thus can make the passivation layer 30 and routing by setting enough light exposures
Polyimide layer 41 on window 31 is removed, and the light exposure that the polyimide layer 41 in the sensor window 32 is set is not
It cannot be removed enough.
As Figure 2-3, it is preferred that the lead 43 is aluminum steel, and the waterproof layer 44 is resin layer, and the sensor is
Optical sensor.In the step D, the polyimides on the routing window 31 and the passivation layer 30 is removed using developer solution
Layer 41.In the step G, the silicon oxide layer 42 on the polyimide layer 41 is removed using etching liquid, and makes silicon oxide layer
Waterproof layer 44 on 42 is removed together.
It summarizes, is covered with polyimide layer 41 in sensor window 32 described in the utility model, 41 energy of polyimide layer
Protect sensor in the sensor window 32 encapsulation and using when be not damaged, to protect the performance of sensor.
In addition, with regard to being not necessarily to repair sensor, and making the encapsulation of this power device 1 due to being hardly damaged sensor when its encapsulation
Method is simple.
The basic principles and main features and advantage of the utility model have been shown and described above.The technical staff of the industry
It should be appreciated that the present utility model is not limited to the above embodiments, the only explanation of the description in above embodiments and description
The principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model also have various changes
Change and improve, these various changes and improvements fall within the scope of the claimed invention.The requires of the utility model protects model
It encloses and is defined by the appending claims and its equivalent thereof.
Claims (5)
1. a kind of power device, it is characterised in that: it include chip, formed metal layer on the chip, be formed in it is described
Passivation layer, encapsulated layer, sensor and lead on metal layer offer sensor window and multiple routing windows on the passivation layer
Mouthful, the sensor is set in the sensor window and is electrically connected with the metal layer, and the encapsulated layer includes being formed in
The passivation layer, the waterproof layer on the routing window and be formed in the sensor window and the covering sensor it is poly-
Imide layer, the lead passes through the waterproof layer and the metal layer is electrically connected in the routing window.
2. power device according to claim 1, it is characterised in that: the waterproof layer is resin layer.
3. power device according to claim 1, it is characterised in that: the lead is aluminum steel.
4. power device according to claim 1, it is characterised in that: the sensor is optical sensor.
5. power device according to claim 1, it is characterised in that: there are two the routing windows, the sensor window
Mouth is arranged between two routing windows.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821312623.2U CN208674097U (en) | 2018-08-15 | 2018-08-15 | A kind of power device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821312623.2U CN208674097U (en) | 2018-08-15 | 2018-08-15 | A kind of power device |
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CN208674097U true CN208674097U (en) | 2019-03-29 |
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CN201821312623.2U Active CN208674097U (en) | 2018-08-15 | 2018-08-15 | A kind of power device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109103152A (en) * | 2018-08-15 | 2018-12-28 | 深圳市金誉半导体有限公司 | A kind of power device and its packaging method |
-
2018
- 2018-08-15 CN CN201821312623.2U patent/CN208674097U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109103152A (en) * | 2018-08-15 | 2018-12-28 | 深圳市金誉半导体有限公司 | A kind of power device and its packaging method |
CN109103152B (en) * | 2018-08-15 | 2024-06-04 | 深圳市金誉半导体股份有限公司 | Power device and packaging method thereof |
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Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang Street Lang Kou community Hua Chang Lu Hua Chang Industrial Zone second 1-3 Patentee after: Shenzhen Jinyu Semiconductor Co., Ltd. Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang Street Lang Kou community Hua Chang Lu Hua Chang Industrial Zone second 1-3 Patentee before: Shenzhen Jinyu Semiconductor Co., Ltd. |