CN208570135U - A kind of laminated film - Google Patents

Abstract

The utility model with low temperature preparation, high conductivity, high light transmittance slimming complex thin film structure, it is set between the substrate and at least one metal electrode of photoelectric cell, it is characterised in that: the membrane structure has the first hyaline layer, conductive layer and the second hyaline layer.First hyaline layer is transparent conductive semiconductor film, is deposited on the one side of the substrate；The conductive layer is nanoscale conductive film, is deposited on the one side of first hyaline layer, and the second hyaline layer is oxidic transparent conductive film, is deposited on the one side of the conductive layer.

Description

A kind of laminated film

Technical field

The utility model has slimming three-layer composite structure, completes in low temperature preparation about a kind of transparent conductive film, And the complex thin film structure with high conductivity and high-penetration rate.

Background technique

It is general common photoelectric cell such as light-emitting diode (LED), flat-panel screens (FPD), solar battery, touch Panel screen and e-book etc., inside be to have transparent conductive film as conduction bridge, be indispensable structure.It should Conductive film must be provided simultaneously with good conductive characteristic and light penetration.

General transparent conductive film is divided into two kinds, the first is metallic film, as metal thickness about 10nm, metallic film There can be translucency, but actually most metal needs good technology controlling and process, avoid when being deposited into thickness about 10nm The discontinuous film of island is formed, meanwhile, metallic film is more sensitive for institute's use environment, such as temperature, humidity and oxidation, It may cause metallic film physico-chemical property to generate qualitative change and influence element effect.Second is oxidic transparent conductive film, It can stablize and possess its photoelectricity physical property, but to compare metallic film poor for the electric conductivity of oxidic transparent conductive film, needs to increase Add its thickness to reach excellent conductive characteristic, the penetration of light will be reduced.

Utility model content

To solve the above problems, proposing a kind of complex thin film structure of semiconductor-metal-semiconductor, this structure can be thin Change transparent conductive film thickness and do not form the discontinuous film of island, still there is high conductivity and high light transmittance.

In order to achieve the above object, the utility model has low temperature preparation, high conductivity, the slimming THIN COMPOSITE of high light transmittance Membrane structure is set between the substrate and at least one metal electrode of photoelectric cell, it is characterised in that: the membrane structure has the One hyaline layer, conductive layer and the second hyaline layer.First hyaline layer is transparent conductive semiconductor film, is deposited on the one of the substrate Side；The conductive layer is nanoscale conductive film, is deposited on the one side of first hyaline layer, and the second hyaline layer is oxide Transparent conductive film is deposited on the one side of the conductive layer.

Wherein, which is formed with the second hyaline layer by physically or chemically depositional mode, and this is first transparent The material of layer and second hyaline layer is all oxidic transparent conductive film, and oxidic transparent conductive film is indium oxide and oxidation Zinc, composition is for Ga_xTi_yZn_1-x-yO, and 0<x<1,0<y<1,1-x-y>0, and the thickness of first hyaline layer and second is thoroughly The thickness summation of bright layer is 70-140 nanometers.

The material of the conductive layer is that thinning metal or graphene film are formed by physically or chemically depositional mode, thinning gold Category is the metal with high perveance, such as gold, silver, copper, titanium, aluminium, tungsten or its alloy.The conductive layer thickness is between 10- 25 nanometers.

A kind of slimming with high conductivity and high-penetration rate prepared under low temperature provided by the utility model is compound Film.It is applied in photoelectric cell, has high conductivity and has both the physical characteristics such as high-transmittance, and prepares this under low temperature Composite construction makes applied photoelectric cell can reach more preferably operational paradigm.

Detailed description of the invention

In order to have a clear understanding of the content of the utility model, with reference to the following drawings.

Fig. 1 is the diagrammatic cross-section of embodiment.

Fig. 2 is the curve graph that embodiment is directed to resistance test in each thickness of the conductive layer without high-temperature heat treatment.

Fig. 3 is the light transmittance measurement figure of embodiment.

Specific embodiment

Fig. 1 is the diagrammatic cross-section for the utility model embodiment.As shown in Figure 1, having high conductivity and high translucidus Thinning membrane structure 1, be arranged between the substrate 2 in photoelectric cell and at least one metal electrode 3.It is transparent with first Layer 10, conductive layer 11 and the second hyaline layer 12, first hyaline layer 10 are transparent conductive semiconductor films, with physically or chemically etc. The one side that vapor deposition mode is set to the substrate 2 to improve the adhesion with substrate 2, and makes conductive layer as buffer layer 11 develop in deposition not towards island, and the second hyaline layer 12 is primarily to protection conductive layer 11, and by first hyaline layer The thickness summation of 10 thickness and the second hyaline layer 12 is limited to 70-140 nanometers, avoids influencing light transmission because thickness is too thick Property, and decline the efficiency of photoelectric cell.Moreover, the material of first hyaline layer 10 and second hyaline layer 12 is all zinc gallium titanium Oxide, composition is for Ga_xTi_yZn_1-x-yO, and 0<x<1,0<y<1,1-x-y>0 replace old tin oxide with this structure Indium (ITO) material has high conductivity, high transparency characteristic because zinc gallium titanium oxide can be prepared at normal temperature.Avoid Two hyaline layers 12 need to prepare under high temperature, lead to the accumulation of metal of conductive layer 11 and form island structure, cause complex thin film structure Consistency is unevenly distributed and influences electric conductivity.

The conductive layer 11 is the metallic film or graphene film with high conductivity, to increase the conduction of composite construction Property, and the one side of first hyaline layer 10 is set by physically or chemically mode, and the other side of the conductive layer 11 with The connection of second hyaline layer 12.Wherein, which is low-resistance coefficient material, as gold, silver, copper, titanium, aluminium, tungsten or its alloy, It can also be graphene.Since the conductive layer 11 is metal or graphene, therefore there are the physical characteristics such as highly conductive, and by the conductive layer 11 thickness is limited to 10 to 25 nanometers, to achieve the effect that thinning, makes it when with physical characteristics such as light transmissions, there will not be There is the case where island discontinuous film because thickness is too thin, to obtain preferable operational paradigm.

It is exemplified below the conductive layer 11 of the membrane structure 1 electric conductivity measured under different-thickness, carrier transport factor And its electrical resistivity results.The zinc oxide material (GTZO) that first hyaline layer 10 and the second hyaline layer 12 select gallium titanium to be co-doped with, the One hyaline layer, 10 thickness is about 60nm, 12 thickness of the second hyaline layer is about 40nm, and is deposited on glass material with sputtering way On substrate 2, wherein first hyaline layer 10 and the second hyaline layer are using ZnO/TiO₂/Ga₂O₃The target of=96/1/3wt%, Cooperate base vacuum 3.0x10^-6Torr, operating pressure 2.5x10^-3Torr, power 100-250W, and 2 temperature of substrate is room Temperature, and use argon gas (Ar) as process gas.The conductive layer 11 is made of the Ag material for selecting low-resistance coefficient, and same sharp It is deposited to be formed with sputtering way, wherein the conductive layer 11 is to cooperate base vacuum 5.0x10 with Ag target^-6Torr, operating pressure 2.5x10^-3Torr, power 75-125W, and 2 temperature of substrate is room temperature, and uses argon gas (Ar) as process gas, this It is respectively 10,15,20 and 25 nanometers that different-thickness is deposited on one hyaline layer 10.It is that embodiment is warmed without height referring to Fig. 2 Each thickness is for the curve graph of resistance test under the following conditions for the conductive layer of processing, and horizontal axis is silver-colored thickness (nm), and the longitudinal axis is electricity Resistance rate (Ω cm).Its resistivity is minimum about can be down to 2.31x 10^-5Ω cm, therefore provable set above first hyaline layer 10 The whole electric conductivity of the membrane structure 1 can be significantly improved by setting the conductive layer 11.Fig. 3 is the light transmittance measurement figure of embodiment, Horizontal axis is wavelength (nm), and the longitudinal axis is penetrance (%).Test used structure for zinc gallium titanium oxide (60nm)/silver (20nm)/ The sandwich complex thin film structure of zinc gallium titanium oxide (40nm).As shown in Figure 3, it can be seen that at visible-range, this structure Possessing high average transmittance is 81%, and possessing highest light transmittance at wavelength 630nm is about 86%.It accordingly can be applied to photoelectricity High-quality transparent conductive film needed for element, and promote element operation efficiency in turn.

When the conductive layer 11 with a thickness of 20 nanometers and the second hyaline layer 12 with a thickness of 60 nanometers when, the membrane structure 1 tool There are optimal smooth penetration and a contact resistance, the membrane structure 1 of the utility model has high conductivity and high-penetration rate Complex thin film structure photoelectric characteristic can promote the optimal operating efficiency of photoelectric cell application.

Claims (6)

1. a kind of laminated film is arranged between photoelectric cell or substrate and at least one metal electrode, it is characterised in that: from this Substrate or the photoelectric cell are sequentially equipped with the first hyaline layer, conductive layer and the second hyaline layer upwards, which is partly to lead Body transparent conductive film is deposited on the one side of the substrate, the conductive layer be nanoscale conductive film, be deposited on this first thoroughly The one side of bright layer, the second hyaline layer are oxidic transparent conductive film, are deposited on the one side of the conductive layer.

2. laminated film as described in claim 1, wherein the material of the first hyaline layer and the second hyaline layer is zinc gallium titanyl The oxidic transparent conductive film of object, composition is for Ga_xTi_yZn_1-x-yO, and 0<x<1,0<y<1,1-x-y>0.

3. laminated film as described in claim 1, wherein the thickness summation of the first hyaline layer and the second hyaline layer is 70-140 Nanometer.

4. laminated film as described in claim 1, wherein conductive layer is thinning metal or graphene film.

5. laminated film as described in claim 1, wherein the thickness of the conductive layer is between 10 to 25 nanometers.

6. laminated film as described in claim 1, wherein the first hyaline layer, the second hyaline layer and conductive layer by physics or Chemical deposition mode is formed.