CN2085565U - 全集光超高光效发光二极管 - Google Patents
全集光超高光效发光二极管 Download PDFInfo
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- CN2085565U CN2085565U CN90215418U CN90215418U CN2085565U CN 2085565 U CN2085565 U CN 2085565U CN 90215418 U CN90215418 U CN 90215418U CN 90215418 U CN90215418 U CN 90215418U CN 2085565 U CN2085565 U CN 2085565U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
一种全集光超高光效发光二极管,由管脚(1)、封
装材料(2)、管芯(3)、引线(4)及集光膜(5)组成,透明
的封装材料的外表面是半球面或抛物面状的,在这外
表面上镀有一层具有光的反射性能的金属材料制成
的集光膜(5),使管芯发出的光线透过封装材料达到
集光膜,集光膜将全部光线集中会聚成一束光线再向
前发射出去,光效很高,比普通二极管提高20~30
倍,适宜在航道导标、高速公路上高亮显示牌中作光
源用。
Description
本实用新型涉及一种全集光超高光效的发光二极管,适用于作为航道导标、桥函标及其它定向光亮显示牌的光源。
目前社会上使用的发光二极管都是由管芯发出的光线直接经透明的封装材料后散射出去,这种发光二极管由于发射角大,(±15°~50°),集光后的定向光强较小(小於0.9烛光),因此这种二极管不适宜在导航标中作光源用。
本实用新型的目的是设计一种全发射角集光、定向光效高的能在各种导航标示中作高亮光源的全集光超高光效发光二极管。
本实用新型的目的是这样实现的,将普通发光二极管的透明的封装材料的外表面制成半球面或抛物面状的,在这外表面上镀上一层集光膜,使管芯发出的光线经透明的封装材料后在集光膜上聚成一束光线,再向前发射,达到全发射角集光的效果。
下面结合附图对本实用新型的结构叙述如下:
图:全集光超高光效发光二极管结构图
(1)管脚 (2)封装材料 (3)管芯 (4)引线 (5)集光膜
全集光超高光效发光二极管由管脚(1)、封装材料(2)、管芯(3)、引线(4)及集光膜(5)组成。管脚(1)的二个引出头外露,管脚的其余部分及管芯(3)、引线(4)都封装在透明的封装材料(2)内,封装材料(2)的外表面制成半球面或抛物面状的,在这外表面上镀有一层具有光的反射性能的金属材料制成的集光膜(5),集光膜的口径为5-50mm。管芯(3)发出的光线透过透明的封装材料(2)达到集光膜(5)时,集光膜将全部光线集中会聚成一束光线再向前发射出去,集光角为2л-2.5л立体角,发散角仅为±1°-15°。
本实用新型的发光二极管由于采用集光后再发射,因此,光效很高,光强是普通二极管的20~30倍,而本实用新型本身的制作很方便,成本也不高,因此可以推广使用到航道导标、桥函标及高速公路上用的高亮显示牌及其它光源等领域。
举一个实施例:
管脚的一部分及管芯、引线封装在透明的封装材料内,封装材料用聚碳酸脂,封装材料的外表面制成半球面状的,在外表面上镀有一层银或汞制成的集光膜,集光膜口径为25mm。
Claims (2)
1、一种全集光超高光效发光二极管,由管脚(1)、封装材料(2)、管芯(3)、引线(4)组成,其特征在于透明的封装材料(2)的外表面是半球面或抛物面状的,在这外表面上镀有一层具有光的反射性能的金属材料制成的集光膜(5)。
2、如权利要求1所述的全集光超高光效发光二极管,其特征在于集光膜的口径为5-50mm。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN90215418U CN2085565U (zh) | 1990-10-31 | 1990-10-31 | 全集光超高光效发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN90215418U CN2085565U (zh) | 1990-10-31 | 1990-10-31 | 全集光超高光效发光二极管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2085565U true CN2085565U (zh) | 1991-09-25 |
Family
ID=4894708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN90215418U Expired - Lifetime CN2085565U (zh) | 1990-10-31 | 1990-10-31 | 全集光超高光效发光二极管 |
Country Status (1)
Country | Link |
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CN (1) | CN2085565U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100435365C (zh) * | 2004-12-21 | 2008-11-19 | 夏普株式会社 | 发光二极管、背光器件以及制造发光二极管的方法 |
CN100481535C (zh) * | 2004-03-24 | 2009-04-22 | 日立电线精密株式会社 | 发光器件的制造方法和发光器件 |
-
1990
- 1990-10-31 CN CN90215418U patent/CN2085565U/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100481535C (zh) * | 2004-03-24 | 2009-04-22 | 日立电线精密株式会社 | 发光器件的制造方法和发光器件 |
CN100435365C (zh) * | 2004-12-21 | 2008-11-19 | 夏普株式会社 | 发光二极管、背光器件以及制造发光二极管的方法 |
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C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
RN01 | Renewal of patent term | ||
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |