CN208521297U - Ultrasonic wave identification circuit and fingerprint Identification sensor - Google Patents
Ultrasonic wave identification circuit and fingerprint Identification sensor Download PDFInfo
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- CN208521297U CN208521297U CN201820966169.6U CN201820966169U CN208521297U CN 208521297 U CN208521297 U CN 208521297U CN 201820966169 U CN201820966169 U CN 201820966169U CN 208521297 U CN208521297 U CN 208521297U
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Abstract
The utility model relates to ultrasonic fingerprint identification technology field more particularly to a kind of ultrasonic wave identification circuits and fingerprint Identification sensor.The ultrasonic wave identification circuit includes receiver Rx, three TFT transistor M1, M3 and M4, the receiver Rx has piezoelectric effect, the first end of the receiver Rx and external control circuit are electrically connected, the second end of the receiver Rx is simultaneously and the grid of TFT transistor M4, the first end of TFT transistor M1 is electrically connected, the grid of the TFT transistor M1, second end is all electrically connected with external control circuit, the first end and external power supply Vcc of the TFT transistor M4 is electrically connected, the second end of the TFT transistor M4 and the first end of TFT transistor M3 are electrically connected, the grid of the TFT transistor M3 and external control circuit are electrically connected, the second end acquisition module of the TFT transistor M3 is electrically connected.Fingerprint Identification sensor uses above-mentioned ultrasonic wave identification circuit.
Description
[technical field]
The utility model relates to ultrasonic fingerprint identification technology field more particularly to a kind of ultrasonic wave identification circuits and fingerprint
Identification sensor.
[background technique]
Living things feature recognition is the technology for distinguishing different biological features, including fingerprint, palmmprint, face, DNA, sound
Etc. identification technologies.Fingerprint refers to the lines of the convex injustice of the positive surface skin fovea superior of the finger tips of people, and the regular arrangement of lines is formed
Different line types.Fingerprint recognition, which refers to by comparing the details of different fingerprints, carries out identity authentication.It is lifelong due to having
Invariance, uniqueness and convenience, fingerprint recognition using more and more extensive.Since ultrasonic wave is good for fingerprint recognition effect,
More and more producers are dedicated to studying ultrasonic fingerprint sensor.And the ultrasonic wave of existing ultrasonic fingerprint identification sensor
Structure is complicated for identification circuit, not easy to manufacture.
Therefore, how a kind of simple ultrasonic wave identification circuit of structure is provided, is just led at ultrasonic fingerprint identification technology
The demand in domain！
[utility model content]
The technical issues of structure is complicated for the ultrasonic wave identification circuit that overcomes existing ultrasonic fingerprint identification sensor, this
Utility model provides a kind of ultrasonic wave identification circuit and fingerprint Identification sensor.
The scheme that the utility model solves technical problem is to provide a kind of ultrasonic wave identification circuit, is used to receive outside
The control of control circuit generates ultrasonic wave and receives the ultrasonic wave of reflection to generate electric signal transmission to acquisition module, the ultrasound
Wave identification circuit includes receiver Rx, and three TFT transistors M1, M3 and M4, the receiver Rx has piezoelectric effect, described to connect
The first end and external control circuit for receiving device Rx are electrically connected, the second end of the receiver Rx while and TFT transistor M4
Grid, TFT transistor M1 first end be electrically connected, the grid of the TFT transistor M1, second end all with external control
Circuit is electrically connected, and the first end and external power supply Vcc of the TFT transistor M4 are electrically connected, and the of the TFT transistor M4
The first end of two ends and TFT transistor M3 are electrically connected, and the grid of the TFT transistor M3 and external control circuit electrically connect
It connects, the second end and acquisition module of the TFT transistor M3 is electrically connected.
Preferably, the ultrasonic wave identification circuit further includes the first end and TFT crystalline substance of TFT transistor M2, TFT transistor M2
The second end of body pipe M3 is electrically connected, and grid, second end and the control circuit of outside of the TFT transistor M2 is electrically connected.
Preferably, the ultrasonic wave identification circuit further includes TFT transistor M5, the second end of the TFT transistor M3 and
The first end of TFT transistor M5 is electrically connected, and the grid of the TFT transistor M5 and external control circuit are electrically connected, institute
The second end and acquisition module for stating TFT transistor M5 are electrically connected.
Preferably, the acquisition module is that silicon substrate handles chip.
It is preferably supplement energy circuit with the control circuit of the outside of the drain electrode connection of the TFT transistor M1, it is described
Supplement energy circuit provides stable voltage and or current.
Preferably, the control circuit of the outside provides receiver reset level to the grid of TFT transistor M1, described
The source electrode and drain electrode of TFT transistor M1 electrically conducts, what the voltage and supplement energy circuit of the receiver Rx second end provided
Voltage is equal, and the control circuit of the outside provides of short duration pulse signal to the first end of the receiver Rx later, described
Receiver RX generates ultrasonic signal and launches, and the control circuit of the outside is mentioned to the grid of TFT transistor M1 later
For gate voltage level, ultrasonic wave is returned by blocking reflected, and the receiver Rx receives ultrasonic oscillation and generates oscillator signal, institute
When stating oscillator signal voltage and being lower, the supplement energy circuit supplements energy to the second end of receiver Rx by TFT transistor M1
Amount, the second end voltage of receiver Rx are got higher, and make drain electrode and source electrode of the electric signal of external power supply Vcc by TFT transistor M4
Electric current and/or voltage become larger, external control circuit provides high level, the TFT transistor for the grid of TFT transistor M3
The source electrode and drain electrode of M3 is connected, and the electric signal of Vcc is sensed by TFT transistor M4 and M3 to acquisition module, the reception
The voltage of device reset level is greater than the voltage of gate voltage level.
Preferably, it is external when the control circuit of the outside provides receiver reset level to the grid of TFT transistor M1
Control circuit is suitable to the source electrode offer size of TFT transistor M2, and the sustained voltage of whole cycle size, external control
Circuit processed provides an of short duration high level to the grid of TFT transistor M2, and external supplement energy circuit gives TFT transistor always
The second end of M1 provides the sustained voltage of whole cycle size, and external power supply Vcc persistently gives the first end of TFT transistor M4
The sustained electric current of whole cycle size and/or voltage are provided, external control circuit is provided to the grid of TFT transistor M1
Level is low level, and external control circuit is stable voltage, external control to the voltage Tx that receiver Rx first end provides
The level that circuit is provided to the grid of TFT transistor M3 is low level.
Preferably, the voltage of the electrical node between the source electrode to TFT transistor M3 and the drain electrode of TFT transistor M5 carries out
It resets, resets the voltage Vpe of the second end of receiver Rx, so that voltage Vpe is equal to the voltage that external control circuit provides, later
Receiver Rx is set to generate piezoelectric effect to emit ultrasonic wave, TFT transistor M1 is to receive ultrasonic wave to prepare later, external benefit
It fills the voltage that energy circuit is provided to the second end of TFT transistor M1 to increase, the voltage after raising is greater than the door of TFT transistor M1
Voltage limit, external control circuit provide gate voltage level to the grid of TFT transistor M1, and TFT transistor M1 is allowed to be in critical
On state, external supplement energy circuit supplements energy to the second end of receiver Rx by TFT transistor M1 at this time, receives
The voltage Vpe of device Rx second end gradually rises, and the voltage Vpe of Rx second end is increased to certain voltage and tends towards stability, Zhi Houchao
Sound wave is encountered object return and is received by receiver Rx, and due to piezoelectric effect, the voltage at the both ends receiver Rx changes generation
Oscillator signal, external supplement energy circuit supplement energy, receiver Rx to the second end of receiver Rx by TFT transistor M1
Second end voltage Vpe gradually rise, make what the source electrode and drain electrode of the TFT transistor M4 was connected to be more and more obvious, external electrical
The electric current and/or voltage of source Vcc can also be become larger by the drain electrode and source electrode of TFT transistor M4, and receiver Rx is no longer received
The second end voltage Vpe of the ultrasonic wave of reflection, receiver Rx tends towards stability, and external control circuit is TFT transistor M3 later
Grid high level is provided, the source electrode and drain electrode conducting of the TFT transistor M3, the electric signal of Vcc by TFT transistor M4 and
M3 is sensed to acquisition module.
The utility model also provides a kind of fingerprint Identification sensor, which uses above-mentioned ultrasonic wave
Identification circuit.
Preferably, the ultrasonic wave identification circuit includes multiple, multiple ultrasonic wave identification circuit array settings.
Compared with prior art, the ultrasonic wave identification circuit of the utility model includes receiver Rx, three TFT transistors
M1, M3 and M4, the receiver Rx have piezoelectric effect, and the first end of the receiver Rx and external control circuit electrically connect
It connects, the second end of the receiver Rx is electrically connected with the first end of the grid of TFT transistor M4, TFT transistor M1 simultaneously, institute
State the grid of TFT transistor M1, second end is all electrically connected with external control circuit, the first end of the TFT transistor M4
It is electrically connected with external power supply Vcc, the second end of the TFT transistor M4 and the first end of TFT transistor M3 are electrically connected, institute
The grid and external control circuit for stating TFT transistor M3 are electrically connected, the second end acquisition module electricity of the TFT transistor M3
Property connection, do not have to using diode with TFT coupled in parallel, structure is simple, manufacture craft good compatibility, simple process,
It is easy production, and external control circuit can supplement energy to receiver Rx by TFT transistor M1, reduce external control
The pulse voltage that circuit is provided to the first end of receiver Rx, the energy that receiver Rx emits ultrasonic wave do not have to excessive.
Compared with prior art, the fingerprint Identification sensor of the utility model uses above-mentioned ultrasonic wave identification circuit,
Its do not have to using diode with TFT coupled in parallel, structure is simple, manufacture craft good compatibility, simple process, be easy make
Make, and external control circuit can give receiver Rx to supplement energy by TFT transistor M1, reduce external control circuit to
The pulse voltage that the first end of receiver Rx provides, the energy that receiver Rx emits ultrasonic wave do not have to excessive.
The ultrasonic wave identification circuit of the utility model includes multiple, the ultrasonic wave identification circuit array setting, fingerprint knowledge
Individual sensor structure is simple, it is easy to which detection receives the position of the circuit of ultrasonic wave, and detection is accurate.
[Detailed description of the invention]
Fig. 1 is the particular circuit configurations schematic diagram of the utility model ultrasonic wave identification circuit.
Fig. 2 is the time diagram of varying input signal in the utility model ultrasonic wave identification circuit.
Fig. 3 is the time diagram of another varying input signal in the utility model ultrasonic wave identification circuit.
Description of symbols: 10, ultrasonic wave identification circuit；11, acquisition module.
[specific embodiment]
In order to make the purpose of this utility model, technical solution and advantage are more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to solve
The utility model is released, is not used to limit the utility model.
Referring to Fig. 1, the utility model provides a kind of ultrasonic wave identification circuit 10, it is used to receive external control circuit
Control, generate ultrasonic wave and receive the ultrasonic wave of reflection simultaneously to generate electric signal transmission to external acquisition module 11.
The ultrasonic wave identification circuit 10 include receiver Rx, TFT transistor M1, TFT transistor M2, TFT transistor M3,
TFT transistor M4 and TFT transistor M5.
The receiver Rx has piezoelectric effect, and receiver Rx has a first end and a second end.The first of receiver Rx
When end and second end are applied electric field, receiver Rx can be deformed, such as one end of receiver Rx applies burning voltage, and the other end is applied
Add pulse voltage, then continuous shaking and generates ultrasonic wave in the receiver Rx short time.If receiver Rx is deformed by power, connect
The both ends for receiving device Rx can generate positive and negative opposite charge, such as receiver Rx receives ultrasonic wave, then the first end of receiver Rx
Pulse charge can be generated with second end.The first end of receiver Rx and external control circuit are electrically connected, external control electricity
Road can provide pulse voltage to the first end of receiver Rx so that receiver Rx generates ultrasonic wave.The second end of receiver Rx is simultaneously
It is electrically connected with the grid of TFT transistor M4, the source electrode of TFT transistor M1.The node voltage of the second end of receiver Rx marks
For Vpe.It is appreciated that first end, the second end of each element described in the utility model, merely to better illustrating each member
The electric connection pin of the connection relationship of part does not limit which specific end of original part as first end, which end is second end.
TFT transistor is thin film transistor (TFT).The grid of TFT transistor M1, drain electrode all electrically connect with external control circuit
It connects.External control circuit provides high level or low level to the grid of TFT transistor M1, to control the source of TFT transistor M1
The on-off of pole and drain electrode, the level flag that external control circuit is provided to the grid of TFT transistor M1 are Gdbias.External
The level flag that control circuit is provided to the drain electrode of TFT transistor M1 is Dbias.It is enough in the grid pressure difference to TFT transistor M1
It is fully between the source electrode and drain electrode of TFT transistor M1 when big, i.e. the source electrode and drain electrode bidirectionally conductive of TFT transistor M1.It is excellent
Selection of land, external control circuit provide receiver reset level, gate voltage level and low level to the grid of TFT transistor M1,
Wherein, receiver reset level is greater than gate voltage level, and gate voltage level is greater than low level.Drain electrode with TFT transistor M1 connects
The control circuit of the outside connect is supplement energy circuit, and the supplement energy circuit provides stable voltage and or current.?
When the level of the grid of TFT transistor M1 is receiver reset level, the source electrode and drain electrode bidirectionally conductive of TFT transistor M1 makes
The drain voltage of TFT transistor M1 is approximately equal to the voltage Vpe of receiver Rx second end, i.e. the voltage Vpe of receiver Rx second end
It is approximately equal to Dbias and (in the utility model, ignores the influence and theoretical value deviation of TFT transistor nature, it is believed that receiver Rx
The voltage Vpe of second end is equal to Dbias), receiver reset level is preferably 9~16V, preferably 10V, 12V or 15V.In TFT
When the level of the grid of transistor M1 is gate voltage level, the source electrode and drain electrode of TFT transistor M1 is in critical conduction mode, if
When voltage is lower than gate voltage level, then the source electrode and drain electrode of TFT transistor M1 disconnects, i.e., the voltage of gate voltage level is equal to TFT
The threshold voltage of transistor M1.When the level of the grid of TFT transistor M1 is low level, the source electrode of TFT transistor M1 and leakage
Pole is in an off state.
The drain electrode of TFT transistor M4 and external power supply Vcc are electrically connected, the source electrode and TFT crystal of the TFT transistor M4
The drain electrode of pipe M3 is electrically connected.
The grid of TFT transistor M3 and external control circuit are electrically connected, the source electrode of the TFT transistor M3 simultaneously and
The drain electrode of TFT transistor M2, the drain electrode of TFT transistor M5 are electrically connected.Grid of the external control circuit to TFT transistor M3
High level or low level are provided, to control the on-off of TFT transistor M3 source electrode and drain electrode.The level mark of TFT transistor M3 grid
It is denoted as ROW.
Grid, source electrode and the control circuit of outside of TFT transistor M2 is electrically connected.External control circuit gives TFT crystalline substance
The grid of body pipe M2 provides high level or low level, to control the on-off of TFT transistor M2 source electrode and drain electrode.External control electricity
Road provides reset level to the source electrode of TFT transistor M2.High electricity is provided to the grid of TFT transistor M2 in external control circuit
Flat, when the source electrode and drain electrode of TFT transistor M2 is connected, the voltage of the source electrode of TFT transistor M2 is a resetting voltage, the reset
The size of voltage is set as needed, such as 3V.The level flag of TFT transistor M2 grid is Ref1, TFT transistor M2 source electrode
Level flag is Rst.
The grid of TFT transistor M5 and external control circuit are electrically connected, the drain electrode of TFT transistor M5 and acquisition module
11 are electrically connected.External control circuit provides high level or low level to the grid of TFT transistor M5, to control TFT crystal
The on-off of pipe M5 source electrode and drain electrode.The level flag of TFT transistor M5 grid is COL.TFT transistor M1 in the present embodiment~
M5 is N-type TFT transistor, it will be understood that TFT transistor M1~M5 can also be selected as p-type TFT transistor, at this time p-type TFT
The connection type of the source electrode and drain electrode of transistor is opposite with respect to the connection type of the source electrode and drain electrode of N-type TFT transistor.TFT
The source electrode of transistor or drain electrode are used as two electrical property to connect the stage, and the source electrode or drain electrode one of both of TFT transistor are TFT transistor
First end, another one be TFT transistor second end.Such as the first end of acquisition module 11 and the TFT transistor M5 of N-type electrical property
Connection, then when TFT transistor M5 is P-channel, acquisition module 11 needs and the second end of the TFT transistor M5 of p-type is electrically connected.
It is appreciated that TFT transistor M2 and M5 can omit setting, it is electrically connected the drain electrode of TFT transistor M3 and acquisition module.
Acquisition module 11 is used to detect the electric signal of the transmission of ultrasonic wave identification circuit 10.Acquisition module 11 can be a silicon substrate
Handle chip.It is appreciated that acquisition module 11 can be electrically connected other circuits.
Referring to Fig. 2, when in use, in a cycle, in the T0 stage, to the source electrode and TFT transistor of TFT transistor M3
The voltage of electrical node between the drain electrode of M5 is resetted.Specifically, signal control is as follows: external control circuit gives TFT crystalline substance
It is suitable that the source electrode of body pipe M2 provides size, and whole cycle size sustained voltage Ref1, such as 3V, external control circuit
The source electrode and drain electrode conducting of of short duration high level Rst, a TFT transistor M2 is provided to the grid of TFT transistor M2, keeps TFT brilliant
The source electrode of body pipe M3, the drain voltage of TFT transistor M5 reset equal with the source voltage Ref1 of TFT transistor M2.External
Supplement energy circuit gives the drain electrode of TFT transistor M1 to provide the sustained voltage Dbias of whole cycle size, voltage always
Dbias is less than the threshold voltage of TFT transistor M1.External power supply Vcc persistently gives the source electrode of TFT transistor M4 to provide whole cycle
The sustained electric current of size and/or voltage.Assuming that the reception of ultrasonic wave is lived through before this stage, this stage receiver Rx
Second end voltage Vpe greater than TFT transistor M1 drain electrode provide voltage Dbias, external control circuit gives TFT crystal at this time
The level Gdbias that the grid of pipe M1 provides is low level, since low level Gdbias is less than the threshold voltage of TFT transistor M1,
So TFT transistor M1 is in an off state.External control circuit is stable to the voltage Tx that receiver Rx first end provides
Voltage, such as 0V, 5V or 10V, which is set as needed, in the present embodiment without limitation.External control circuit gives TFT crystalline substance
The level ROW that the grid of body pipe M3 provides is low level, and TFT transistor M3 is disconnected.External control circuit gives TFT transistor M5
Grid provide level COL be low level, TFT transistor M5 disconnect.
In the T1 stage, the voltage Vpe of the second end of receiver Rx is resetted, mentions voltage Vpe equal to external control circuit
The voltage Dbias of confession.Specifically, signal control is as follows: external control circuit provides receiver to the grid of TFT transistor M1
The source electrode and drain electrode of reset level, TFT transistor M1 electrically conducts, and the voltage Vpe of the receiver Rx second end becomes smaller, and receives
The voltage Vpe of device Rx second end is equal with the voltage Dbias that supplement energy circuit is provided to the drain electrode of TFT transistor M1.At this time
The voltage that external control circuit is provided to receiver Rx first end is constant.Grid of the external control circuit to TFT transistor M3
The level ROW of offer is low level, and TFT transistor M3 is disconnected.External control circuit is provided to the grid of TFT transistor M5
Level COL is low level, and TFT transistor M5 is disconnected.The level that external control circuit is provided to the grid of TFT transistor M2
Rst is low level, and TFT transistor M2 is disconnected.
In the T2 stage, receiver Rx is made to generate piezoelectric effect to emit ultrasonic wave.Specifically, signal control is as follows: external
Control circuit to TFT transistor M1 grid provide receiver reset level remain unchanged, external control circuit is to institute
The first end for stating receiver Rx provides of short duration pulse signal Tx, and receiver Rx is because piezoelectric effect generates ultrasonic signal and emits
It goes out.The second end of receiver Rx can generate a certain size coupled signal, and Vpe has concussion, due to the source of TFT transistor M1
Pole and drain it is two-way electrically conduct, the voltage Dbias phase that the voltage Vpe of receiver Rx second end and supplement energy circuit provide
Deng.The level ROW that external control circuit is provided to the grid of TFT transistor M3 is low level, and TFT transistor M3 is disconnected.Outside
The level COL that the control circuit in portion is provided to the grid of TFT transistor M5 is low level, and TFT transistor M5 is disconnected.External control
The level Rst that circuit processed is provided to the grid of TFT transistor M2 is low level, and TFT transistor M2 is disconnected.
In the T3 stage, a large amount of ultrasonic wave is propagated outward, i.e., reserves the propagation time to ultrasonic wave.Specifically, control
Signal is as follows: the voltage that external control circuit is provided to the first end of the receiver Rx is consistent with the T0 stage, receiver Rx
Ultrasonic wave is no longer generated, the level ROW that external control circuit is provided to the grid of TFT transistor M3 is low level, TFT crystal
Pipe M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistor M5 is low level, and TFT transistor M5 is disconnected
It opens.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low level, and TFT transistor M2 is disconnected.Outside
The receiver reset level that the control circuit in portion is provided to the grid of TFT transistor M1 remains unchanged.
In the T4 stage, TFT transistor M1 is to receive ultrasonic wave to prepare.Specifically, control signal is as follows: the ultrasound of transmitting
Wave encounters object and starts to return, and such as encounters the finger of people.When the T4 stage is initial, external control circuit gives TFT transistor M1
Grid provide gate voltage level, allow TFT transistor M1 be in critical conduction mode, for reception ultrasonic echo prepare.It can be with
Understand, external control circuit to TFT transistor M1 grid provide gate voltage level can also at other moment in T4 stage,
A large amount of ultrasonic waves encounter object return reach receiver Rx before.External control circuit is provided to receiver Rx first end
Voltage it is constant with respect to the T3 stage.The level ROW that external control circuit is provided to the grid of TFT transistor M3 is low level,
TFT transistor M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistor M5 is low level, and TFT is brilliant
Body pipe M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low level, TFT transistor M2
It disconnects.
In the T5 stage, ultrasonic wave encounters object, is received as the ultrasonic wave of finger is returned by receiver Rx, since piezoelectricity is imitated
It answers, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, is lower and is lower than in the second end voltage Vpe of receiver Rx
When the drain voltage Dbias of TFT transistor, TFT transistor M1 will be become lightly conducting state, external benefit from critical conduction mode
It fills energy circuit and energy is supplemented to the second end of receiver Rx by TFT transistor M1, the second end voltage Vpe of receiver Rx becomes
Height, the grid and source voltage difference of TFT transistor M1 become smaller, at this time TFT transistor M1 be off state, the second of receiver Rx
The energy at end cannot be flowed to from the source electrode of TFT transistor M1 and be drained, since the second end voltage Vpe of receiver Rx has the benefit of energy
It fills, the second end voltage Vpe of receiver Rx gradually rises, and the source electrode and drain electrode of the TFT transistor M4 is connected increasingly
Obviously, the electric current of external power supply Vcc and/or voltage can also be become larger by the drain electrode and source electrode of TFT transistor M4.And this rank
Section, the gate voltage level that external control circuit is provided to the grid of TFT transistor M1 remain unchanged, and external control circuit is connect
It is constant with respect to the T4 stage to receive the voltage that device Rx first end provides.External control circuit is provided to the grid of TFT transistor M3
Level ROW is low level, and TFT transistor M3 is disconnected.The level that external control circuit is provided to the grid of TFT transistor M5
COL is low level, and TFT transistor M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is
Low level, TFT transistor M2 are disconnected.
T6 stage, receiver Rx no longer receive the ultrasonic wave of reflection, and the second end voltage Vpe of receiver Rx tends towards stability.
Specifically, control signal is as follows: external control circuit provides low level, the grid of TFT transistor to the grid of TFT transistor M1
Pole and source electrode electrically open circuit.External control circuit provides high level to the grid of TFT transistor M3, makes the source of TFT transistor
Pole and drain electrode conducting.TFT transistor M3 is equivalent to a switching tube.The voltage that external control circuit is provided to receiver Rx first end
The opposite T5 stage is constant.The level COL that external control circuit is provided to the grid of TFT transistor M5 is low level, TFT crystal
Pipe M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low level, and TFT transistor M2 is disconnected
It opens.
T7 stage, the detection of acquisition module 11 pass through the electric signal of TFT transistor M3.Specifically, control signal is as follows: external
Control circuit to TFT transistor M1 grid provide low level remain unchanged, external control circuit is to receiver Rx first
Hold the voltage provided constant with respect to the T6 stage.The high level ROW that external control circuit is provided to the grid of TFT transistor M3 is tieed up
It holds constant.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low level, and TFT transistor M2 is disconnected
It opens.External control circuit provides high level (ROW) for the grid of TFT transistor M5, the source electrode of the TFT transistor M5 and leakage
Pole conducting, the Vcc electric signal for flowing through TFT transistor M4, M3 and M5 are sensed to acquisition module 11.Vcc can reach acquisition mould
11 electric current of block and/or voltage swing are related with the voltage swing of the grid of TFT transistor M4, the electricity of the grid of TFT transistor M4
Pressure is bigger, and the electric current and/or voltage that acquisition module 11 senses are i.e. bigger, therefore ultrasonic wave identification circuit 10 can sense ultrasonic wave
Reflect the size of signal.In this way, a cycle control signal is completed, control signal is reciprocal in following cycle.
Referring to Fig. 3, the utility model provides the control mode of another ultrasonic wave identification circuit.When in use, one
In period, the voltage of the electrical node between the T0 stage, the source electrode to TFT transistor M3 and the drain electrode of TFT transistor M5 into
Row resets.Specifically, signal control is as follows: external control circuit is suitable and entire to the source electrode offer size of TFT transistor M2
Period size sustained voltage Ref1, such as 3V, it is of short duration that external control circuit to the grid of TFT transistor M2 provides one
The source electrode and drain electrode of high level Rst, TFT transistor M2 is connected, and makes the source electrode of TFT transistor M3, the drain electrode electricity of TFT transistor M5
Pressure resets equal with the source voltage Ref1 of TFT transistor M2.Drain electrode of the external supplement energy circuit to TFT transistor M1
Voltage Dbias is provided, voltage Dbias is less than the threshold voltage of TFT transistor M1.External power supply Vcc persistently gives TFT transistor M4
Source electrode the sustained electric current of whole cycle size and/or voltage are provided.Assuming that living through ultrasonic wave before this stage
It receives, drain electrode of the voltage Vpe greater than TFT transistor M1 of the second end of this stage receiver Rx provides voltage Dbias, outer at this time
The level Gdbias that portion's control circuit is provided to the grid of TFT transistor M1 is low level, since low level Gdbias is less than TFT
The threshold voltage of transistor M1, so TFT transistor M1 is in an off state.External control circuit is mentioned to receiver Rx first end
The voltage Tx of confession is stable voltage, and such as 0V, 5V or 10V, which is set as needed, in the present embodiment without limitation.Outside
The level ROW that the control circuit in portion is provided to the grid of TFT transistor M3 is low level, and TFT transistor M3 is disconnected.External control
The level COL that circuit processed is provided to the grid of TFT transistor M5 is low level, and TFT transistor M5 is disconnected.
In the T1 stage, the voltage Vpe of the second end of receiver Rx is resetted, mentions voltage Vpe equal to external control circuit
The voltage Dbias of confession.Specifically, signal control is as follows: external supplement energy circuit is provided to the drain electrode of TFT transistor M1
Voltage Dbias remains unchanged, and external control circuit provides receiver reset level, TFT crystal to the grid of TFT transistor M1
The source electrode and drain electrode of pipe M1 electrically conducts, and the voltage Vpe of the receiver Rx second end becomes smaller, the voltage of receiver Rx second end
Vpe is equal with the voltage Dbias that supplement energy circuit is provided to the drain electrode of TFT transistor M1.External control circuit is connect at this time
It is constant to receive the voltage that device Rx first end provides.The level ROW that external control circuit is provided to the grid of TFT transistor M3 is low
Level, TFT transistor M3 are disconnected.The level COL that external control circuit is provided to the grid of TFT transistor M5 is low level,
TFT transistor M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low level, and TFT is brilliant
Body pipe M2 is disconnected.
In the T2 stage, receiver Rx is made to generate piezoelectric effect to emit ultrasonic wave.Specifically, signal control is as follows: external
Supplement energy circuit to TFT transistor M1 drain electrode provide voltage Dbias remain unchanged, external control circuit is to TFT
The receiver reset level that the grid of transistor M1 provides remains unchanged, and external control circuit gives the first of the receiver Rx
End provides of short duration pulse signal Tx, and receiver Rx is because piezoelectric effect generates ultrasonic signal and launches.Receiver Rx's
Second end can generate a certain size coupled signal, and Vpe has concussion, due to the two-way electricity of source electrode and drain electrode of TFT transistor M1
Property conducting, the voltage Dbias of the voltage Vpe of receiver Rx second end and supplement energy circuit offer is equal.External control electricity
The level ROW that road is provided to the grid of TFT transistor M3 is low level, and TFT transistor M3 is disconnected.External control circuit is given
The level COL that the grid of TFT transistor M5 provides is low level, and TFT transistor M5 is disconnected.External control circuit gives TFT crystalline substance
The level Rst that the grid of body pipe M2 provides is low level, and TFT transistor M2 is disconnected.
In the T3 stage, a large amount of ultrasonic wave is propagated outward.Specifically, control signal is as follows: external supplement energy
The voltage Dbias that circuit is provided to the drain electrode of TFT transistor M1 remains unchanged, and external control circuit is to the receiver Rx's
The voltage that first end provides is consistent with the T0 stage, and receiver Rx no longer generates ultrasonic wave, and external control circuit gives TFT transistor
The level ROW that the grid of M3 provides is low level, and TFT transistor M3 is disconnected.Grid of the external control circuit to TFT transistor M5
The level COL that pole provides is low level, and TFT transistor M5 is disconnected.External control circuit is provided to the grid of TFT transistor M2
Level Rst be low level, TFT transistor M2 disconnect.The reception that external control circuit is provided to the grid of TFT transistor M1
Device reset level remains unchanged.
In the T4 stage, TFT transistor M1 is to receive ultrasonic wave to prepare.Specifically, control signal is as follows: the ultrasound of transmitting
Wave encounters object and starts to return, and such as encounters the finger of people.When the T4 stage is initial, external supplement energy circuit gives TFT crystal
The voltage Dbias that the drain electrode of pipe M1 provides is increased, and the voltage Dbias after raising is greater than the threshold voltage of TFT transistor M1, external
Control circuit to TFT transistor M1 grid provide gate voltage level, allow TFT transistor M1 to be in critical conduction mode, this
When outside supplement energy circuit by TFT transistor M1 to receiver Rx second end supplement energy, receiver Rx second end
Voltage Vpe gradually rise, the voltage Vpe of Rx second end is increased to certain voltage and tends towards stability.External control circuit is connect
It is consistent with the T3 stage to receive the voltage that device Rx first end provides.The electricity that external control circuit is provided to the grid of TFT transistor M3
Flat ROW is low level, and TFT transistor M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistor M5
For low level, TFT transistor M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low electricity
Flat, TFT transistor M2 is disconnected.
In the T5 stage, ultrasonic wave encounters object, is received as the ultrasonic wave of finger is returned by receiver Rx, since piezoelectricity is imitated
It answers, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, is lower and is lower than in the second end voltage Vpe of receiver Rx
When the drain voltage Dbias of TFT transistor, TFT transistor M1 will be become lightly conducting state, external benefit from critical conduction mode
It fills energy circuit and energy is supplemented to the second end of receiver Rx by TFT transistor M1, the second end voltage Vpe of receiver Rx becomes
Height, the grid and source voltage difference of TFT transistor M1 become smaller, at this time TFT transistor M1 be off state, the second of receiver Rx
The energy at end cannot be flowed to from the source electrode of TFT transistor M1 and be drained, since the second end voltage Vpe of receiver Rx has the benefit of energy
It fills, the second end voltage Vpe of receiver Rx gradually rises, and the source electrode and drain electrode of the TFT transistor M4 is connected increasingly
Obviously, the electric current of external power supply Vcc and/or voltage can also be become larger by the drain electrode and source electrode of TFT transistor M4.And this rank
Section, the voltage Dbias that external supplement energy circuit is provided to the drain electrode of TFT transistor M1 remain unchanged consistent with the T4 stage.
The gate voltage level that external control circuit is provided to the grid of TFT transistor M1 remains unchanged, and external control circuit is to reception
The voltage that device Rx first end provides is consistent with the T4 stage.The level that external control circuit is provided to the grid of TFT transistor M3
ROW is low level, and TFT transistor M3 is disconnected.The level COL that external control circuit is provided to the grid of TFT transistor M5 is
Low level, TFT transistor M5 are disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2 is low electricity
Flat, TFT transistor M2 is disconnected.
T6 stage, receiver Rx no longer receive the ultrasonic wave of reflection, and the second end voltage Vpe of receiver Rx tends towards stability.
Specifically, control signal is as follows: the voltage Dbias that external supplement energy circuit is provided to the drain electrode of TFT transistor M1 is reduced,
Voltage Dbias after reduction is consistent with the voltage Dbias in T0 stage.External control circuit is mentioned to the grid of TFT transistor M1
For low level, the electrically open circuit of the grid and source electrode of TFT transistor.External control circuit is provided to the grid of TFT transistor M3
The source electrode and drain electrode of TFT transistor is connected in high level.TFT transistor M3 is equivalent to a switching tube.External control circuit is connect
It is consistent with the T5 stage to receive the voltage that device Rx first end provides.The electricity that external control circuit is provided to the grid of TFT transistor M5
Flat COL is low level, and TFT transistor M5 is disconnected.The level Rst that external control circuit is provided to the grid of TFT transistor M2
For low level, TFT transistor M2 is disconnected.
T7 stage, the detection of acquisition module 11 pass through the electric signal of TFT transistor M3.Specifically, control signal is as follows: external
Supplement energy circuit to TFT transistor M1 drain electrode provide voltage Dbias remain unchanged.External control circuit is to TFT
The low level that the grid of transistor M1 provides remains unchanged, the voltage and T6 that external control circuit is provided to receiver Rx first end
Stage is consistent.The high level ROW that external control circuit is provided to the grid of TFT transistor M3 remains unchanged.External control
The level Rst that circuit is provided to the grid of TFT transistor M2 is low level, and TFT transistor M2 is disconnected.External control circuit is
The grid of TFT transistor M5 provides high level (ROW), and TFT crystal is flowed through in the source electrode and drain electrode conducting of the TFT transistor M5
The Vcc electric signal of pipe M4, M3 and M5 are sensed to acquisition module 11.Vcc can reach 11 electric current of acquisition module and/or voltage is big
Small related with the voltage swing of grid of TFT transistor M4, the voltage of the grid of TFT transistor M4 is bigger, and acquisition module 11 is felt
The electric current and/or voltage measured is i.e. bigger, therefore ultrasonic wave identification circuit 10 can sense the size of ultrasonic reflections signal.Such as
This, a cycle controls signal and completes, and control signal is reciprocal in following cycle.
The utility model also provides a kind of fingerprint Identification sensor, which uses above-mentioned ultrasonic wave
Identification circuit 10.Fingerprint Identification sensor includes multiple above-mentioned ultrasonic wave identification circuits 10, multiple ultrasonic wave identification circuits 10
Array arrangement, wherein the grid received signal of TFT transistor M3 is recorded as row selects signal in each ultrasonic wave identification circuit 10,
The grid received signal of TFT transistor M4 is recorded as column selection signal.It is described when acquisition module 11 collects the electric signal of Vcc
Control circuit, that is, knowable detects the position for receiving the ultrasonic wave identification circuit 10 of ultrasonic wave, such as which row, which column.
Compared with prior art, the ultrasonic wave identification circuit of the utility model includes receiver Rx, three TFT transistors
M1, M3 and M4, the receiver Rx have piezoelectric effect, and the first end of the receiver Rx and external control circuit electrically connect
It connects, the second end of the receiver Rx is electrically connected with the first end of the grid of TFT transistor M4, TFT transistor M1 simultaneously, institute
State the grid of TFT transistor M1, second end is all electrically connected with external control circuit, the first end of the TFT transistor M4
It is electrically connected with external power supply Vcc, the second end of the TFT transistor M4 and the first end of TFT transistor M3 are electrically connected, institute
The grid and external control circuit for stating TFT transistor M3 are electrically connected, the second end acquisition module electricity of the TFT transistor M3
Property connection, do not have to using diode with TFT coupled in parallel, structure is simple, manufacture craft good compatibility, simple process,
It is easy production, and external control circuit can supplement energy to receiver Rx by TFT transistor M1, reduce external control
The pulse voltage that circuit is provided to the first end of receiver Rx, the energy that receiver Rx emits ultrasonic wave do not have to excessive.
Compared with prior art, the fingerprint Identification sensor of the utility model uses above-mentioned ultrasonic wave identification circuit,
Its do not have to using diode with TFT coupled in parallel, structure is simple, manufacture craft good compatibility, simple process, be easy make
Make, and external control circuit can give receiver Rx to supplement energy by TFT transistor M1, reduce external control circuit to
The pulse voltage that the first end of receiver Rx provides, the energy that receiver Rx emits ultrasonic wave do not have to excessive.
The ultrasonic wave identification circuit of the utility model includes multiple, the ultrasonic wave identification circuit array setting, fingerprint knowledge
Individual sensor structure is simple, it is easy to which detection receives the position of the circuit of ultrasonic wave, and detection is accurate.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modification within the principle of utility model, equivalent replacement and improvement etc. should all include the protection scope of the utility model
Within.
Claims (10)
1. a kind of ultrasonic wave identification circuit is used to receive the control of external control circuit, generates ultrasonic wave and receive reflection
Ultrasonic wave to generate electric signal transmission to acquisition module, it is characterised in that: the ultrasonic wave identification circuit includes receiver Rx, three
A TFT transistor M1, M3 and M4, the receiver Rx have piezoelectric effect, the first end of the receiver Rx and external control
Circuit processed is electrically connected, the second end of the receiver Rx simultaneously and the grid of TFT transistor M4, TFT transistor M1 first
End is electrically connected, and the grid of the TFT transistor M1, second end are all electrically connected with external control circuit, the TFT crystal
The first end and external power supply Vcc of pipe M4 are electrically connected, and the first of the second end of the TFT transistor M4 and TFT transistor M3
End is electrically connected, and the grid of the TFT transistor M3 and external control circuit are electrically connected, and the of the TFT transistor M3
Two ends and acquisition module are electrically connected.
2. ultrasonic wave identification circuit as described in claim 1, it is characterised in that: the ultrasonic wave identification circuit further includes TFT
The first end of transistor M2, TFT transistor M2 and the second end of TFT transistor M3 are electrically connected, the grid of the TFT transistor M2
The control circuit of pole, second end and outside is electrically connected.
3. ultrasonic wave identification circuit as claimed in claim 2, it is characterised in that: the ultrasonic wave identification circuit further includes TFT
The second end of transistor M5, the TFT transistor M3 and the first end of TFT transistor M5 are electrically connected, the TFT transistor M5
Grid and external control circuit be electrically connected, the second end and acquisition module of the TFT transistor M5 is electrically connected.
4. ultrasonic wave identification circuit as described in claim 1, it is characterised in that: the acquisition module is that silicon substrate handles chip.
5. ultrasonic wave identification circuit as claimed in claim 2, it is characterised in that: connected with the drain electrode of the TFT transistor M1
The control circuit of outside be supplement energy circuit, the supplement energy circuit provides stable voltage and or current.
6. ultrasonic wave identification circuit as claimed in claim 5, it is characterised in that: the control circuit of the outside gives TFT crystal
The grid of pipe M1 provides receiver reset level, and the source electrode and drain electrode of the TFT transistor M1 electrically conducts, the receiver Rx
The voltage of second end is equal with the voltage that supplement energy circuit provides, and the control circuit of the outside gives the receiver Rx later
First end of short duration pulse signal is provided, the receiver RX generates ultrasonic signal and simultaneously launches, later the outside
Control circuit provide gate voltage level to the grid of TFT transistor M1, ultrasonic wave returned by blocking reflected, the receiver
Rx receives ultrasonic oscillation and generates oscillator signal, and when the oscillator signal voltage is lower, the supplement energy circuit passes through TFT crystalline substance
Body pipe M1 supplements energy to the second end of receiver Rx, and the second end voltage of receiver Rx is got higher, and makes the telecommunications of external power supply Vcc
Number become larger by the drain electrode of TFT transistor M4 and the electric current and/or voltage of source electrode, external control circuit is TFT transistor M3
Grid high level is provided, the source electrode and drain electrode conducting of the TFT transistor M3, the electric signal of Vcc by TFT transistor M4 and
M3 is sensed to acquisition module, and the voltage of the receiver reset level is greater than the voltage of gate voltage level.
7. ultrasonic wave identification circuit as claimed in claim 6, it is characterised in that: the control circuit of the outside gives TFT crystal
When the grid of pipe M1 provides receiver reset level, external control circuit is suitable to the source electrode offer size of TFT transistor M2, and
The sustained voltage of whole cycle size, external control circuit provide an of short duration height electricity to the grid of TFT transistor M2
Flat, external supplement energy circuit gives the second end of TFT transistor M1 to provide the sustained voltage of whole cycle size always,
External power supply Vcc persistently gives the first end of TFT transistor M4 to provide the sustained electric current of whole cycle size and/or voltage,
The level that external control circuit is provided to the grid of TFT transistor M1 is low level, and external control circuit is to receiver Rx first
The voltage Tx that end provides is stable voltage, and the level that external control circuit is provided to the grid of TFT transistor M3 is low electricity
It is flat.
8. ultrasonic wave identification circuit as claimed in claim 5, it is characterised in that: to the source electrode and TFT crystal of TFT transistor M3
The voltage of electrical node between the drain electrode of pipe M5 is resetted, and is resetted the voltage Vpe of the second end of receiver Rx, is made voltage
Vpe is equal to the voltage that external control circuit provides, and makes receiver Rx generation piezoelectric effect to emit ultrasonic wave later, later TFT
Transistor M1 is to receive ultrasonic wave to prepare, the voltage that external supplement energy circuit is provided to the second end of TFT transistor M1
It increases, the voltage after raising is greater than the threshold voltage of TFT transistor M1, grid of the external control circuit to TFT transistor M1
Gate voltage level is provided, TFT transistor M1 is allowed to be in critical conduction mode, external supplement energy circuit passes through TFT crystalline substance at this time
Body pipe M1 supplements energy to the second end of receiver Rx, and the voltage Vpe of receiver Rx second end gradually rises, the electricity of Rx second end
Pressure Vpe is increased to certain voltage and tends towards stability, and ultrasonic wave is encountered object return and received by receiver Rx later, due to piezoelectricity
Effect, the voltage at the both ends receiver Rx, which changes, generates oscillator signal, and external supplement energy circuit passes through TFT transistor M1
Energy is supplemented to the second end of receiver Rx, the second end voltage Vpe of receiver Rx gradually rises, and makes the TFT transistor M4
Source electrode and drain electrode conducting be more and more obvious, the electric current and/or voltage of external power supply Vcc can pass through the leakage of TFT transistor M4
Pole and source electrode also become larger, and receiver Rx no longer receives the ultrasonic wave of reflection, and the second end voltage Vpe of receiver Rx tends to be steady
Fixed, external control circuit provides high level, the source electrode of the TFT transistor M3 and leakage for the grid of TFT transistor M3 later
Pole conducting, the electric signal of Vcc are sensed by TFT transistor M4 and M3 to acquisition module.
9. a kind of fingerprint Identification sensor, it is characterised in that: the fingerprint Identification sensor uses any one of claim 1-8 institute
The ultrasonic wave identification circuit stated.
10. fingerprint Identification sensor as claimed in claim 9, it is characterised in that: the ultrasonic wave identification circuit include it is multiple,
Multiple ultrasonic wave identification circuit array settings.
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| CN201820966169.6U CN208521297U (en) | 2018-06-21 | 2018-06-21 | Ultrasonic wave identification circuit and fingerprint Identification sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108596160A (en) * | 2018-06-21 | 2018-09-28 | 成都安瑞芯科技有限公司 | Ultrasonic wave identification circuit and fingerprint identification sensor |
| CN111508413A (en) * | 2020-04-23 | 2020-08-07 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method thereof and display panel |
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2018
- 2018-06-21 CN CN201820966169.6U patent/CN208521297U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108596160A (en) * | 2018-06-21 | 2018-09-28 | 成都安瑞芯科技有限公司 | Ultrasonic wave identification circuit and fingerprint identification sensor |
| CN108596160B (en) * | 2018-06-21 | 2023-10-31 | 成都大超科技有限公司 | Ultrasonic wave recognition circuit and fingerprint recognition sensor |
| CN111508413A (en) * | 2020-04-23 | 2020-08-07 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method thereof and display panel |
| WO2021212996A1 (en) * | 2020-04-23 | 2021-10-28 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method therefor, and display panel |
| US11651614B2 (en) | 2020-04-23 | 2023-05-16 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel driving circuit, driving method thereof and display panel |
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