CN104809431A - Ultrasonic sensing device - Google Patents
Ultrasonic sensing device Download PDFInfo
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- CN104809431A CN104809431A CN201510156697.6A CN201510156697A CN104809431A CN 104809431 A CN104809431 A CN 104809431A CN 201510156697 A CN201510156697 A CN 201510156697A CN 104809431 A CN104809431 A CN 104809431A
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Abstract
Disclosed is an ultrasonic sensing device. The ultrasonic sensing device comprises a transmitting unit and a receiving unit, wherein the transmitting unit comprises a transmitting element, a first conducting structure and a second conducting structure; the first conducting structure and the second conducting structure are used for generating voltage difference so that the transmitting element can emit ultrasonic waves; the receiving unit comprises a receiving element, a third conducting structure and a fourth conducting structure; the third conducting structure and the fourth conducting structure are used for converting the ultrasonic waves received by the receiving element into electric signals, and the third conducting structure comprises a plurality of first sensing electrodes, which are sequentially arranged at intervals and extend in a first direction; one of the first conducting structure, the second conducting structure and the fourth conducting structure comprises a plurality of second sensing electrodes, which extend in a second direction different from the first direction and are overlapped with the plurality of first sensing electrodes in an insulating mode.
Description
Technical field
The present invention relates to a kind of ultrasonic sensing device, particularly relate to a kind of ultrasonic fingerprint sensing apparatus.
Background technology
Existing sensing apparatus, as fingerprint acquisition apparatus, be divided into infrared type, condenser type and ultrasonic type etc. according to technology, wherein ultrasonic type sensing apparatus generally includes sound wave transmitting element, acoustic receiver unit and the thin film transistor (TFT) array for detecting object features (as fingerprint).But, thin film transistor (TFT) array because of structure more complicated, may cause that the wiring of whole sensing apparatus is complicated, cost is higher.
Summary of the invention
In view of this, be necessary to provide a kind of wiring comparatively complicated simple ultrasonic sensing device.
A kind of ultrasonic sensing device, it comprises transmitting element and receiving element.This transmitting element comprises transmitting element, first conductive structure and the second conductive structure, this first with this second conductive structure make this transmitting element send ultrasound wave for generation of pressure reduction, this receiving element comprises receiving element, 3rd conductive structure and the 4th conductive structure, 3rd is converted to electric signal with the 4th conductive structure for the ultrasound wave received by receiving element, 3rd conductive structure comprises many articles of sequentially interval settings and the first sensing electrode extended along first direction, this is first years old, second and the 4th conductive structure one of them comprise the second direction that many articles of edges are different from first direction and extend and to insulate the second overlapping sensing electrode with these many articles the first sensing electrodes, this ultrasonic sensing device detects the object on this ultrasonic sensing device by these many first sensing electrodes and these many second sensing electrodes.
A kind of ultrasonic sensing device, it comprises transmitting element and receiving element, this transmitting element comprises transmitting element, first conductive structure and the second conductive structure, this first with this second conductive structure make this transmitting element send ultrasound wave for generation of pressure reduction, this receiving element comprises receiving element, 3rd conductive structure and the 4th conductive structure, 3rd is converted to electric signal with the 4th conductive structure for the ultrasound wave received by receiving element, 3rd conductive structure comprises the first sensing electrode, this is first years old, second and the 4th conductive structure one of them comprise the second sensing electrode, this first sensing electrode and this second sensing electrode mutually insulated and define multiple sensing points, this ultrasonic sensing device detects the object in the plurality of sensing points by this first sensing electrode and this second sensing electrode.
Compared to prior art, above-mentioned ultrasonic sensing device detects the object features of this ultrasonic sensing device by first and second sensing electrode of mutually insulated, and without the need to arranging tft array, structure is comparatively simple.
Accompanying drawing explanation
Fig. 1 is the perspective exploded view of the ultrasonic sensing device of first embodiment of the invention.
Fig. 2 is the solid assembling schematic diagram of ultrasonic sensing device shown in Fig. 1.
Fig. 3 is the diagrammatic cross-section of Fig. 2 III-III along the line.
Fig. 4 is the diagrammatic cross-section of the ultrasonic sensing device of this first embodiment one preferred embodiment.
Fig. 5 is the floor map of ultrasonic sensing device shown in Fig. 1.
Fig. 6 is the using state schematic diagram of ultrasonic sensing device shown in Fig. 1.
Fig. 7 is the schematic equivalent circuit of ultrasonic sensing device shown in Fig. 1.
Fig. 8 is the drive waveforms figure of ultrasonic sensing device shown in Fig. 1.
Fig. 9 is the perspective exploded view of the ultrasonic sensing device of second embodiment of the invention.
Figure 10 is the solid assembling schematic diagram of ultrasonic sensing device shown in Fig. 9.
Figure 11 is the diagrammatic cross-section of Figure 10 III-III along the line.
Figure 12 is the diagrammatic cross-section of the ultrasonic sensing device of the second embodiment one preferred embodiment.
Figure 13 is the floor map of ultrasonic sensing device shown in Fig. 9.
Figure 14 is the using state schematic diagram of ultrasonic sensing device shown in Fig. 9.
Figure 15 is the schematic equivalent circuit of ultrasonic sensing device shown in Fig. 9.
Figure 16 is the drive waveforms figure of ultrasonic sensing device shown in Fig. 9.
Main element symbol description
Ultrasonic sensing device 100,200
Transmitting element 110,210
Receiving element 120,220
First insulation course 130,230
Second insulation course 140,240
3rd insulation course 150,250
Transmitting element 111,211
First conductive structure 113,213
Second conductive structure 115,215
Receiving element 121,221
3rd conductive structure 123,223
4th conductive structure 125,225
Colloid layer 112,114,122,124,212,214,222,224
First sensing electrode 1231,2231
First direction X
Second direction Y
Second sensing electrode 1151,2251
Sensing points P
Sending part 1111
Acceptance division 1211
Sweep circuit 160,260
Reading circuit 170,270
Output terminal 161,261
Object under test 180,280
Sweep signal K
Sense period S
Reset period S1
Sound wave transmit time segments S2
Sound wave transmits and receives period S3
Read period S4
First period S4-1
Second period S4-2
Ultrasound wave U
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, Fig. 1 is the perspective exploded view of the ultrasonic sensing device 100 of first embodiment of the invention.This ultrasonic sensing device 100 may be used for finger print, and it comprises transmitting element 110, receiving element 120, first insulation course 130, second insulation course 140 and the 3rd insulation course 150.This receiving element 120 is arranged at above this transmitting element 110, this first insulation course 130 is between this transmitting element 110 and this receiving element 120, this second insulation course 140 is positioned at the side of this transmitting element 110 away from this receiving element 120, and the 3rd insulation course 150 is arranged at the side of this receiving element 120 away from this transmitting element 110.
Particularly, this transmitting element 110 comprises transmitting element 111, first conductive structure 113 and the second conductive structure 115, this first and this second conductive structure 113 and 115 make this transmitting element 111 send ultrasound wave for generation of pressure reduction.In present embodiment, this transmitting element 111 is between this first conductive structure 113 and this second conductive structure 115.This first conductive structure 113 is between this second insulation course 140 and this transmitting element 111, and this second conductive structure 115 is between this transmitting element 111 and this first insulation course 130.
This receiving element 120 comprises receiving element 121, the 3rd conductive structure 123 and the 4th conductive structure 125.3rd and the 4th conductive structure 123 and 125 is converted to electric signal for the ultrasound wave received by receiving element, makes this ultrasonic sensing device 100 detect object on this ultrasonic sensing device 100 (as finger) to obtain object features (as fingerprint) by electric signal.3rd conductive structure 123 is between this first insulation course 130 and this receiving element 121, and the 4th conductive structure 125 is between this receiving element 121 and the 3rd insulation course 150.
Preferably, this transmitting element 111 and this receiving element 121 are piezoelectric, such as poly-vinylidene difluoride (Polyvinylidene Fluoride, PVDF).This first, this second and the 3rd insulation course 130,140 and 150 can be the plastic materials such as PET.This first, second, third and the 4th the material of conductive structure 113,115,123 and 125 be conductive material, as conductive materials such as transparent conductive material (as tin indium oxide, indium zinc oxide), silver, carbon nano-tube or Graphenes, but be not limited to above material.
Refer to Fig. 2 and Fig. 3, Fig. 2 is the solid assembling schematic diagram of ultrasonic sensing device 100 shown in Fig. 1, and Fig. 3 is the diagrammatic cross-section of Fig. 2 III-III along the line.This second insulation course 140, this first conductive structure 113, this transmitting element 111, this second conductive structure 115, this first insulation course 130, the 3rd conductive structure 123, this receiving element 121, the 4th conductive structure 125 and the 3rd insulation course 150 are according to said sequence stacked setting from bottom to top.Wherein, this first conductive structure 113 can be bonded on this second insulation course 140 by colloid layer, also can be formed directly on this second insulation course 140.This second conductive structure 115 and the 3rd conductive structure 123 can be bonded in the both sides of this first insulation course 130 respectively by colloid layer, also can be formed at the both sides of this first insulation course 130 respectively.4th conductive structure 125 can be bonded on the 3rd insulation course 150 by colloid layer, also can be formed directly on the 3rd insulation course 150.
Refer to Fig. 4, Fig. 4 is the diagrammatic cross-section of the ultrasonic sensing device 100 of present embodiment one preferred embodiment.In the preferred embodiment, this transmitting element 111 is adhered between this first conductive structure 113 and this second conductive structure 115 by colloid layer 112 and 114, and this receiving element 121 is also adhered between the 3rd conductive structure 123 and the 4th conductive structure 125 by colloid layer 122 and 124.Especially, this colloid layer 112,114,122 and 124 can be conductive rubber.
Refer to Fig. 5, Fig. 5 is the floor map of ultrasonic sensing device 100 shown in Fig. 1.Particularly, in present embodiment, this first conductive structure 113 is continuous print planar conductive layer with the 4th conductive structure 125,3rd conductive structure 123 comprise many articles sequentially interval arrange and the first sensing electrode 1231 extended along first direction X, this second conductive structure 115 comprises the second direction Y that many edges are different from first direction X and extends and to insulate the second overlapping sensing electrode 1151 with these many first sensing electrodes 1231.In present embodiment, this first direction X is vertical with this second direction Y.This first sensing electrode 1231 is with this second sensing electrode 1151 mutually insulated and define multiple sensing points P being positioned at intersection, and this ultrasonic sensing device 100 detects object (as pointed) on the plurality of sensing points P to obtain object features (as fingerprint) by this first sensing electrode 1231 and this second sensing electrode 1151.But being appreciated that in change embodiment, can be that this first conductive structure 113 or the 4th conductive structure 125 comprise the second overlapping sensing electrode that to insulate with these many articles the first sensing electrodes 1231, and the second conductive structure 115 be continuous print planar conductive layer.Preferably, this first sensing electrode 1231 can be the shapes such as elongated rectangular shape, waveform, serrate with this second sensing electrode 1151, but is not limited to above-mentioned shape.
Wherein, between arbitrary neighborhood two the first sensing electrodes 1231, there is interval, and between arbitrary neighborhood two the first sensing electrodes 1231, spacing distance is more than or equal to 2um and is less than or equal to 10um.The width of every bar first sensing electrode 1231 is less than 60 um, is preferably 50um.Between arbitrary neighborhood two the second sensing electrodes 1151, there is interval, and between arbitrary neighborhood two the second sensing electrodes 1151, spacing distance is more than or equal to 2um and is less than or equal to 10um.The width of every bar second sensing electrode 1151 is less than 60 um, is preferably 50um.Be appreciated that, interval between adjacent two the first sensing electrodes 1231 also for clearance (air gap) or can be filled up by colloid or other isolation material, interval between adjacent two the second sensing electrodes 1151 also for clearance (air gap) or can be filled up by colloid or other isolation material, and this does not affect the technical scheme of this case.
This transmitting element 111 comprises many sequentially interval settings and the sending part 1111 extended along this second direction Y, and each sending part 1111 is corresponding with this second sensing electrode 1151 to be arranged.This sending part 1111 can be also the shapes such as elongated rectangular shape, waveform, serrate, but is not limited to above-mentioned shape.Have interval between adjacent two sending parts 1111, be appreciated that the interval between adjacent two sending parts 1111 for clearance (air gap) or can be filled up by colloid or other isolation material, this does not affect the technical scheme of this case.Wherein, between arbitrary neighborhood two sending parts 1111, spacing distance is more than or equal to 2um and is less than or equal to 10um.The width of every bar sending part 1111 is less than 60 um, is preferably 50um.Particularly, each sending part 1111 can be roughly the same with the shape of this second sensing electrode 1151, and planimetric position is overlapped.In present embodiment, the width of this second sensing electrode 1151 is slightly less than this sending part 1111, and the plane projection of this second sensing electrode 1151 is covered by the plane projection of this sending part 1111 completely completely.
This receiving element 121 comprises many sequentially interval settings and the acceptance division 1211 extended along this first direction X, and each acceptance division 1211 is corresponding with this first sensing electrode 1231 to be arranged.This acceptance division 1211 can be also the shapes such as elongated rectangular shape, waveform, serrate, but is not limited to above-mentioned shape.Have interval between adjacent two acceptance divisions 1211, be appreciated that the interval between adjacent two acceptance divisions 1211 for clearance (air gap) or can be filled up by colloid or other isolation material, this does not affect the technical scheme of this case.Wherein, between arbitrary neighborhood two acceptance divisions 1211, interval is more than or equal to 2um and is less than or equal to 10um.The width of every bar acceptance division 1211 is less than 60 um, is preferably 50um.Each acceptance division 1211 can be roughly the same with the shape of this first sensing electrode 1231, and planimetric position is overlapped.In present embodiment, the width of this first sensing electrode 1231 is less than this acceptance division 1211, and the plane projection of this first sensing electrode 1231 is covered by the plane projection of this acceptance division 1211 completely completely.
Please again consult Fig. 4, in present embodiment, due to this transmitting element 111 and this receiving element 121 comprise these many sending parts 1111 and many acceptance divisions 1211 respectively time, this sending part 1111 is bonding with every bar second sensing electrode 1151 preferably by the conductive rubber layer 114 of strip, and the conductive rubber layer 122 of this acceptance division 1211 also preferably by strip is bonding with every bar first sensing electrode 1231.
Further, this ultrasonic sensing device 100 also comprises sweep circuit 160 and reading circuit 170.This sweep circuit 160 is for providing series of scanning signals to many second sensing electrodes 1151 of this second conductive structure 115.This sweep circuit 160 comprises multiple output terminal 161, and each output terminal 161 correspondence connects the second sensing electrode 1151.This reading circuit 170 is for reading voltage on many articles of the first sensing electrodes 1231 of the 3rd conductive structure 123 to detect the object features above this ultrasonic sensing device 100.
Refer to Fig. 6, Fig. 7 and Fig. 8, Fig. 6 is the using state schematic diagram of this ultrasonic sensing device 100, Fig. 7 is the schematic equivalent circuit of this ultrasonic sensing device 100, Fig. 8 is the drive waveforms figure of this ultrasonic sensing device 100, wherein, it should be noted that, Fig. 7 and Fig. 8 mainly with adjacent two articles (Ti and Ti+1 article) second sensing electrode 1151 be illustrate the intention equivalent electrical circuit of this ultrasonic sensing device 100 and drive waveforms, also the first to Article 3 (R1 is only illustrated in addition in drive waveforms, R2 and R3 bar) waveform of the first sensing electrode 1231, 4th and the waveform of the waveform of follow-up first sensing electrode and the first sensing electrode 1231 of the first to Article 3 similar, therefore no longer repeat signal.In addition, the U in Fig. 8 represents the ultrasound wave oscillogram over time that this transmitting element 111 sends.
When using this ultrasonic sensing device 100, object under test 180(is as finger) can be positioned over above this ultrasonic sensing device 100, this first and the 4th conductive structure 113 and 125 be applied in fixed voltage (as 0V), this sweep circuit 160 sequentially apply sweep signal K ... to these many second sensing electrodes 1151, this reading circuit 170 obtains the feature of this object under test 180 by the voltage read on these many first sensing electrodes 1231.Particularly, this object under test 180 directly can contact with the superiors of this ultrasonic sensing device 100 (as the 3rd insulation course 150), also can have a slight distance with the superiors of this ultrasonic sensing device 100 (as the 3rd insulation course 150).
Define a sense period S, in this sense period S, the object features on second sensing electrode 1151 is obtained by detecting, i.e. object features on multiple sensing points P of this second sensing electrode 1151 is obtained by detecting.Be appreciated that, if the quantity of the second sensing electrode 1151 of this ultrasonic sensing device 100 is N bar, N be greater than 1 natural number, then the detecting thus the object features on all sensing points P of this N bar second sensing electrode 1151 all can be detected that this ultrasonic sensing device 100 sequentially carries out N number of sense period S obtains.
Particularly, refer to Fig. 7, in this i-th sense period, i is the natural number being more than or equal to 1 and being less than or equal to N, this i-th by the second sensing electrode 1151(i.e. i-th the second sensing electrode 1151 scanned) multiple sensing points P on object features can be obtained by detecting, particularly, this i-th sense period S sequentially comprise the period that resets be S1, sound wave transmit time segments S2, sound wave transmit and receive period S3 and read period S4.Below will specifically for i-th sense period S, the principle of work of this ultrasonic sensing device 100 is elaborated.
A upper sense period S terminates, then i-th sense period S starts, and first will enter the period S1 that resets.At this reset period S1, this first and second conductive structure 113 and 115 is all applied in identical voltage (as 0V), make this first and second conductive structure 113 equal with 115 current potentials thus eliminate the pressure reduction of this transmitting element 111,3rd and the 4th conductive structure 123 and 125 is applied in identical voltage (as 0V), makes the 3rd and the 4th conductive structure 123 equal thus eliminate the pressure reduction of this receiving element 121 with the current potential of 125.
At this sound wave transmit time segments S2, this i bar second sensing electrode 1151 is applied in sweep signal K, this sweep signal K can be high level signal, and this first conductive structure 113 is applied in the fixed voltage (as 0V) of the voltage being different from sweep signal K, makes this transmitting element 111 send ultrasound wave.
Transmit at this ultrasound wave and receive period S3,4th conductive structure 125 is applied in fixed voltage, and this first sensing electrode 1231 is in floating, the ultrasonic transmission that this transmitting element 111 sends is to object under test 180 and received by this receiving element 121 after being reflected by this object under test 180, this receiving element 121 receives ultrasound wave and this ultrasound wave is converted to electric signal, and makes the 3rd and the 4th conductive structure 123 and 125 produce pressure reduction.
At this reading period S4, this reading circuit S4 reads voltage R1, R2, R3 of these many second sensing electrodes 1151 ... judge the object features on this second sensing electrode 1151, so far this i-th sense period S terminates and will enter next sense period S.Particularly, when the voltage on this first sensing electrode 1231 is the first voltage, object features on this first sensing electrode 1231 is convex, when the voltage on this first sensing electrode 1231 is the second voltage, object features on this first sensing electrode 1231 is recessed, and this first voltage is less than this second voltage.As shown in Figure 6, i-th sense period, the object features detecting result on first and second first sensing electrode 1231 is convex, and the object features detecting result on this Article 3 first sensing electrode 1231 is recessed.
Further, when this ultrasonic sensing device 100 has carried out the detecting of the 1st to N number of sense period S, object features on this N bar second sensing electrode 1151 all can be detected and obtain, thus all features obtained when the object on this ultrasonic sensing device 100, as being applied to the fingerprint of the finger on this ultrasonic sensing device 100.
It should be noted that, in Fig. 7, the waveform of V1 and V2 distinguishes the change in voltage of V1 and the V2 position in equivalent electrical circuit shown in representative graph 6, and wherein reading circuit 170 only reads the voltage on many first sensing electrodes 1231 in the reading period.
Compared to prior art, above-mentioned ultrasonic sensing device 100 detects the object features of this ultrasonic sensing device 100 by first and second sensing electrode 1231 and 1151 of mutually insulated, without the need to arranging tft array, structure is comparatively simple.Further, this transmitting element 111 has multiple spaced sending part 1111, makes the ultrasonic signal between each sending part 1111 separate, not easily mutually disturbs, thus promotes this ultrasonic sensing device 100 and sense reliability.
Refer to Fig. 9, Fig. 9 is the perspective exploded view of the ultrasonic sensing device 200 of second embodiment of the invention.This ultrasonic sensing device 200 comprises transmitting element 210, receiving element 220, first insulation course 230, second insulation course 240 and the 3rd insulation course 250.This receiving element 220 is arranged at above this transmitting element 210, this first insulation course 230 is between this transmitting element 210 and this receiving element 220, this second insulation course 240 is positioned at the side of this transmitting element 210 away from this receiving element 220, and the 3rd insulation course 250 is arranged at the side of this receiving element 220 away from this transmitting element 210.
Particularly, this transmitting element 210 comprises transmitting element 211, first conductive structure 213 and the second conductive structure 215, this first with this second conductive structure 213 and 215 make this transmitting element 211 send ultrasound wave for generation of pressure reduction.In present embodiment, this transmitting element 211 is between this first conductive structure 213 and this second conductive structure 215.This first conductive structure 213 is between this second insulation course 240 and this transmitting element 211, and this second conductive structure 215 is between this transmitting element 211 and this first insulation course 230.
This receiving element 220 comprises receiving element 221, the 3rd conductive structure 223 and the 4th conductive structure 225.3rd is converted to electric signal with the 4th conductive structure 223 and 225 for the ultrasound wave received by receiving element 221, makes this ultrasonic sensing device 200 detect object on this ultrasonic sensing device 200 (as pointed) to obtain object features (as fingerprint) by electric signal.3rd conductive structure 223 is between this second insulation course 240 and this receiving element 221, and the 4th conductive structure 225 is between this receiving element 221 and the 3rd insulation course 250.
Preferably, this transmitting element 211 and this receiving element 221 are piezoelectric, such as poly-vinylidene difluoride (Polyvinylidene Fluoride, PVDF).This first, this second and the 3rd insulation course 230,240 and 250 can be the plastic materials such as PET.This first, second, third and the 4th the material of conductive structure 213,215,223 and 225 be conductive material, as conductive materials such as transparent conductive material (as tin indium oxide, indium zinc oxide), silver, carbon nano-tube or Graphenes, but be not limited to above material.
Refer to Figure 10 and Figure 11, Figure 10 is the solid assembling schematic diagram of ultrasonic sensing device 200 shown in Fig. 9, and Figure 11 is the diagrammatic cross-section of Figure 10 XI-XI along the line.This second insulation course 240, this first conductive structure 213, this transmitting element 211, this second conductive structure 215, this first insulation course 230, the 3rd conductive structure 223, this receiving element 221, the 4th conductive structure 225 and the 3rd insulation course 250 are according to said sequence stacked setting from bottom to top.Wherein, this first conductive structure 213 can be bonded on this second insulation course 240 by colloid layer, also can be formed directly on this second insulation course 240.This second conductive structure 215 and the 3rd conductive structure 223 can be bonded in the both sides of this first insulation course 230 respectively by colloid layer, also can be formed at the both sides of this first insulation course 230 respectively.4th conductive structure 225 can be bonded on the 3rd insulation course 250 by colloid layer, also can be formed directly on the 3rd insulation course 250.
Refer to Figure 12, Figure 12 is the diagrammatic cross-section of the ultrasonic sensing device 200 of present embodiment one preferred embodiment.In the preferred embodiment, this transmitting element 211 is adhered between this first conductive structure 213 and this second conductive structure 215 by colloid layer 212 and 214, and this receiving element 221 is also adhered between the 3rd conductive structure 223 and the 4th conductive structure 225 by colloid layer 222 and 224.
Refer to Figure 13, Figure 13 is the floor map of ultrasonic sensing device shown in Fig. 9.Particularly, in present embodiment, this transmitting element 211 is continuous print planar piezoelectric material layer, and this receiving element 221 is also continuous print planar piezoelectric material layer.This first conductive structure 213 is continuous print planar conductive layer with this second conductive structure 215,3rd conductive structure 223 comprise many articles sequentially interval arrange and comprise along the first sensing electrode the 2231, four conductive structure 225 that first direction X extends the second direction Y that many articles of edges are different from first direction X and extend and to insulate the second overlapping sensing electrode 2251 with these many articles the first sensing electrodes 2231.In present embodiment, this first direction X is vertical with this second direction Y.This first sensing electrode 2231 is with this second sensing electrode 2251 mutually insulated and define multiple sensing points P being positioned at intersection, and this ultrasonic sensing device 200 detects object (as pointed) on the plurality of sensing points P to obtain object features (as fingerprint) by this first sensing electrode 2231 and this second sensing electrode 2251.Preferably, this first sensing electrode 2231 can be the shapes such as elongated rectangular shape, waveform, serrate with this second sensing electrode 2251, but is not limited to above-mentioned shape.
Wherein, between arbitrary neighborhood two the first sensing electrodes 2231, there is interval, and between arbitrary neighborhood two the first sensing electrodes 2231, spacing distance is more than or equal to 2um and is less than or equal to 10um.The width of every bar first sensing electrode 2231 is less than 60 um, is preferably 50um.Between arbitrary neighborhood two the second sensing electrodes 2251, there is interval, and between arbitrary neighborhood two the second sensing electrodes 2251, spacing distance is more than or equal to 2um and is less than or equal to 10um.The width of every bar second sensing electrode 2251 is less than 60 um, is preferably 50um.
Further, this ultrasonic sensing device 200 also comprises sweep circuit 260 and reading circuit 270.This sweep circuit 260 is for providing series of scanning signals to many articles of the second sensing electrodes 2251 of the 4th conductive structure 225.This sweep circuit 260 comprises multiple output terminal 261, and each output terminal 261 correspondence connects one second sensing electrode 2251.This reading circuit 270 is for reading voltage on many articles of the first sensing electrodes 2231 of the 3rd conductive structure 223 to detect the object features above this ultrasonic sensing device 200.
Refer to Figure 14, Figure 15 and Figure 16, Figure 14 is the using state schematic diagram of this ultrasonic sensing device 200, and Figure 15 is the schematic equivalent circuit of this ultrasonic sensing device 200, and Figure 16 is the drive waveforms figure of this ultrasonic sensing device 200.Wherein, it should be noted that, Figure 15 and Figure 16 mainly with adjacent two articles (Ti and Ti+1 article) second sensing electrode 2251 be illustrate the intention equivalent electrical circuit of this ultrasonic sensing device 200 and drive waveforms, also only illustrate the waveform of the first to Article 3 (R1, R2 and R3 article) first sensing electrode 2231 in addition in drive waveforms.In addition, U represents the ultrasound wave oscillogram over time that this transmitting element 111 sends.
When using this ultrasonic sensing device 200, object under test 280(is as finger) can be positioned over above this ultrasonic sensing device 200, this first and second conductive structure 213 and 215 is applied in different fixed voltages (as 0V and 5V), this sweep circuit 260 sequentially applies sweep signal K ... to these many second sensing electrodes 2251, this reading circuit 270 obtains the feature of this object under test by the voltage read on these many articles the 3rd sensing electrodes 2231.Particularly, this object under test 280 directly can contact with the superiors of this ultrasonic sensing device 200 (as the 3rd insulation course 250), also can have a slight distance with the superiors of this ultrasonic sensing device 200 (as the 3rd insulation course 250).
In this sense period S, the object features on second sensing electrode 2251 is obtained by detecting, i.e. object features on multiple sensing points P of this second sensing electrode 2251 is obtained by detecting.Be appreciated that, if the quantity of the second sensing electrode 2251 of this ultrasonic sensing device 200 is N bar, N be greater than 1 natural number, then the detecting thus the object features of all sensing points P on this N bar second sensing electrode S all can be detected that this ultrasonic sensing device 200 sequentially carries out N number of sense period S obtains.
Particularly, refer to Figure 16, at this i-th sense period S, i is the natural number being more than or equal to 1 and being less than or equal to N, this i-th by the second sensing electrode 2251(i.e. i-th the second sensing electrode 2251 scanned) on object features can be obtained by detecting, particularly, this i-th sense period S sequentially comprises reset period S1, sound wave transmit time segments S2, sound wave transmits and receive period S3 and read period S4, and i is more than or equal to 1 and is less than or equal to N.Below will specifically for i-th sense period S, the principle of work of this ultrasonic sensing device 200 is explained.
A upper sense period (as the i-th-1) is terminated, then i-th sense period starts, and first will enter the period S1 that resets.At this reset period S1, this first and second conductive structure 213 and 215 is all applied in identical voltage (as 0V), make this first and second conductive structure 213 and 215 current potential equal thus eliminate the pressure reduction of this transmitting element 211,3rd and the 4th conductive structure 223 and 225 is applied in identical voltage (as 0V), makes the current potential of the 3rd and the 4th conductive structure 223 and 225 equal thus eliminates the pressure reduction of this receiving element 221.
At this sound wave transmit time segments S2, this first and second conductive structure 213 and 215 is applied in different fixed voltages (as 0V and 5V), makes this transmitting element 211 send ultrasound wave.
Transmit at this ultrasound wave and receive period S3, the ultrasonic transmission that this transmitting element 211 sends is to object under test 280 and received by this receiving element 221 after being reflected by this object under test 280, this receiving element 221 receives ultrasound wave and this ultrasound wave is converted to electric signal, and makes the 3rd and the 4th conductive structure 223 and 225 produce pressure reduction.
The voltage reading these many first sensing electrodes 2231 at this reading period S4, this reading circuit S4 judges the object features on this second sensing electrode 2251, and so far this i-th sense period terminates and will enter next sense period S(as the i-th+1).Particularly, this reading period S4 comprises the first period S (4-1) sequentially and the second period S (4-2), this first and this second period S (4-1) and this second sensing electrode 2251 of S (4-2) be applied in sweep signal Ti, this sweep signal Ti can be high level signal, in this second period S (4-2), this reading circuit 270 reads the voltage of these many first sensing electrodes 2231.When the voltage on this first sensing electrode 2231 is the first voltage, object features on this first sensing electrode 2231 is convex, when the voltage on this first sensing electrode 2231 is the second voltage, the object features on this first sensing electrode 2231 is recessed, and this first voltage is greater than this second voltage.As shown in figure 14, at i-th sense period S, the object features detecting result on first and second first sensing electrode 2231 is convex, and the object features detecting result on this Article 3 first sensing electrode 2231 is recessed.
Further, when this ultrasonic sensing device 200 has carried out the detecting of the 1st to N number of sense period S, object features on this N bar second sensing electrode 2251 all can be detected and obtain, thus all features obtained when the object on this ultrasonic sensing device 200, as being applied to the fingerprint of the finger on this ultrasonic sensing device 200.
It should be noted that, in Figure 16, the waveform of V1 and V2 represents the change in voltage of V1 and the V2 position in equivalent electrical circuit shown in Figure 15 respectively, and wherein reading circuit 260 only reads the voltage on many first sensing electrodes 1231 in the reading period.
Compared to prior art, above-mentioned ultrasonic sensing device 200 detects the object features of this ultrasonic sensing device 200 by first and second sensing electrode 2231 and 2251 of mutually insulated, without the need to arranging tft array, structure is comparatively simple.
Claims (28)
1. a ultrasonic sensing device, it comprises transmitting element and receiving element, it is characterized in that: this transmitting element comprises transmitting element, first conductive structure and the second conductive structure, this first with this second conductive structure make this transmitting element send ultrasound wave for generation of pressure reduction, this receiving element comprises receiving element, 3rd conductive structure and the 4th conductive structure, 3rd is converted to electric signal with the 4th conductive structure for the ultrasound wave received by receiving element, 3rd conductive structure comprises many articles of sequentially interval settings and the first sensing electrode extended along first direction, this is first years old, second and the 4th conductive structure one of them comprise the second direction that many articles of edges are different from first direction and extend and to insulate the second overlapping sensing electrode with these many articles the first sensing electrodes, this ultrasonic sensing device detects the object on this ultrasonic sensing device by these many first sensing electrodes and these many second sensing electrodes.
2. ultrasonic sensing device as claimed in claim 1, is characterized in that: this transmitting element is between this first conductive structure and this second conductive structure.
3. ultrasonic sensing device as claimed in claim 1, is characterized in that: this receiving element is between the 3rd conductive structure and the 4th conductive structure.
4. ultrasonic sensing device as claimed in claim 1, is characterized in that: this first conductive structure and the 4th conductive structure are continuous print planar conductive layer, and this second conductive structure comprises these many second sensing electrodes.
5. ultrasonic sensing device as claimed in claim 4, is characterized in that: this receiving element comprises many sequentially interval settings and the acceptance division extended along this first direction, and each acceptance division is corresponding with this first sensing electrode to be arranged.
6. ultrasonic sensing device as claimed in claim 5, is characterized in that: the width of this first sensing electrode is less than this acceptance division, the plane projection of this first sensing electrode is covered by the plane projection of this acceptance division completely completely.
7. ultrasonic sensing device as claimed in claim 4, is characterized in that: this transmitting element comprises many sequentially interval settings and the sending part extended along this second direction, and each sending part is corresponding with this second sensing electrode to be arranged.
8. ultrasonic sensing device as claimed in claim 7, is characterized in that: the width of this second sensing electrode is less than this sending part, the plane projection of this second sensing electrode is covered by the plane projection of this sending part completely completely.
9. the ultrasonic sensing device as described in claim 1 or 4, it is characterized in that: these many second sensing electrodes are used for sequentially being applied sweep signal, these many first sensing electrodes, for connecting reading circuit, make this reading circuit detect the object on this ultrasonic sensing device by the change in voltage of these many first sensing electrodes.
10. ultrasonic sensing device as claimed in claim 9, it is characterized in that: define a sense period, in this sense period, object features on this second sensing electrode is obtained by detecting, this sense period sequentially comprises the period that resets, sound wave transmit time segments, sound wave transmission and receives the period and read the period, in this reset period, the current potential of this first and second conductive structure is equal thus eliminate the pressure reduction of this transmitting element, and the current potential of the 3rd and the 4th conductive structure is equal thus eliminate the pressure reduction of this receiving element; At this sound wave transmit time segments, this second sensing electrode is applied in sweep signal, this first and this second conductive structure current potential difference make this transmitting element send sound wave; This sound wave transmit with receive the period, the sonic transmissions that this transmitting element sends to this receiving element and make the 3rd and the 4th conductive structure produce pressure reduction; In this reading period, the voltage that this reading circuit reads these many first sensing electrodes judges the object features on this second sensing electrode.
11. ultrasonic sensing devices as claimed in claim 10, it is characterized in that: at this sound wave transmit time segments, this first conductive structure is applied in fixed voltage, and this fixed voltage is different from the voltage of this sweep signal.
12. ultrasonic sensing devices as claimed in claim 10, is characterized in that: transmit at this sound wave and receive the period, the 4th conductive structure is applied in fixed voltage, and this first sensing electrode is floating.
13. ultrasonic sensing devices as claimed in claim 10, it is characterized in that: in this reading period, when the voltage on this first sensing electrode is the first voltage, object features on this first sensing electrode is convex, when the voltage on this second sensing electrode is the second magnitude of voltage, object features on this first sensing electrode is recessed, and this first voltage is less than this second voltage.
14. ultrasonic sensing devices as claimed in claim 1, is characterized in that: this first conductive structure and this second conductive structure are continuous print planar conductive layer, and the 4th conductive structure comprises these many articles the second sensing electrodes.
15. ultrasonic sensing devices as claimed in claim 14, is characterized in that: this transmitting element and this receiving element are continuous print planar structure.
16. ultrasonic sensing devices as described in claim 1 or 14, it is characterized in that: define a sense period, in this sense period, object features on this second sensing electrode is obtained by detecting, this sense period sequentially comprises the period that resets, sound wave transmit time segments, sound wave transmission and receives the period and read the period, in this reset period, the current potential of this first and second conductive structure is equal thus eliminate the pressure reduction of this transmitting element, and the current potential of the 3rd and the 4th conductive structure is equal thus eliminate the pressure reduction of this receiving element; At this sound wave transmit time segments, this first and this second conductive structure current potential difference make this transmitting element send sound wave; Transmit at this sound wave and receive the period, the sonic transmissions that this transmitting element sends, to this receiving element, makes the 3rd and the 4th conductive structure produce electric signal; In this reading period, this second sensing electrode is applied in sweep signal, and the voltage that this reading circuit reads these many first sensing electrodes judges the object features on this second sensing electrode.
17. ultrasonic sensing devices as claimed in claim 16, is characterized in that: at this sound wave transmit time segments, this first conductive structure and this second conductive structure are applied in different fixed voltages respectively.
18. ultrasonic sensing devices as claimed in claim 16, it is characterized in that: this reading period comprises the first period sequentially and the second period, this first and this second sensing electrode of this second period be applied in sweep signal, in this second period, this reading circuit reads the voltage of these many first sensing electrodes.
19. ultrasonic sensing devices as claimed in claim 16, it is characterized in that: in this reading period, when the voltage on this first sensing electrode is the first voltage, object features on this first sensing electrode is convex, when the voltage on this second sensing electrode is the second magnitude of voltage, object features on this first sensing electrode is recessed, and this first voltage is greater than this second voltage.
20. ultrasonic sensing devices as claimed in claim 1, is characterized in that: the distance between arbitrary neighborhood two the first sensing electrodes or arbitrary neighborhood two the second sensing electrodes is more than or equal to 2um and is less than or equal to 10um.
21. ultrasonic sensing devices as claimed in claim 1, is characterized in that: the width of every bar first sensing electrode or every bar second sensing electrode is less than 60um.
22. ultrasonic sensing devices as claimed in claim 1, it is characterized in that: this ultrasonic sensing device comprises the first insulation course between this transmitting element and this receiving element, this first conductive structure, this transmitting element, this second conductive structure, this first insulation course, the 3rd conductive structure, this receiving element and the sequentially stacked setting of the 4th conductive structure.
23. ultrasonic sensing devices as claimed in claim 22, it is characterized in that: this ultrasonic sensing device also comprises the second insulation course and the 3rd insulation course, this second insulation course is arranged at the side of this first conductive structure away from this transmitting element, and the 3rd insulation course is arranged at the side of the 4th conductive structure away from this receiving element.
24. ultrasonic sensing devices as claimed in claim 23, is characterized in that: this first, this second and the 3rd insulation course comprise PET material.
25. ultrasonic sensing devices as claimed in claim 1, is characterized in that: this first, second, third and the 4th the material of conductive structure comprise transparent conductive material, silver, carbon nano-tube or Graphene.
26. ultrasonic sensing devices as claimed in claim 1, is characterized in that: this first conductive structure and this second conductive structure are continuous print planar conductive layer, and the 4th conductive structure comprises these many articles the second sensing electrodes.
27. ultrasonic sensing devices as claimed in claim 1, is characterized in that: this transmitting element and this receiving element include piezoelectric.
28. 1 kinds of ultrasonic sensing devices, it comprises transmitting element and receiving element, it is characterized in that: this transmitting element comprises transmitting element, first conductive structure and the second conductive structure, this first with this second conductive structure make this transmitting element send ultrasound wave for generation of pressure reduction, this receiving element comprises receiving element, 3rd conductive structure and the 4th conductive structure, 3rd is converted to electric signal with the 4th conductive structure for the ultrasound wave received by receiving element, 3rd conductive structure comprises the first sensing electrode, this is first years old, second and the 4th conductive structure one of them comprise the second sensing electrode, this first sensing electrode and this second sensing electrode define multiple sensing points, this ultrasonic sensing device detects the object in the plurality of sensing points by this first sensing electrode and this second sensing electrode.
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Effective date of registration: 20181012 Address after: No. 689, cooperative road, hi-tech West District, Chengdu, Sichuan Co-patentee after: Interface Optoelectronic (Shenzhen) Co., Ltd. Patentee after: Cheng Cheng Technology (Chengdu) Co., Ltd. Address before: 518109 1.5, 3 of Foxconn science and technology group H District, two Longhua Road, Longhua New District, Shenzhen, Guangdong. Co-patentee before: General Interface Solution Ltd. Patentee before: Interface Optoelectronic (Shenzhen) Co., Ltd. |