CN207218569U - Ultrasonic drive circuit and fingerprint identification sensor - Google Patents
Ultrasonic drive circuit and fingerprint identification sensor Download PDFInfo
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- CN207218569U CN207218569U CN201721264612.7U CN201721264612U CN207218569U CN 207218569 U CN207218569 U CN 207218569U CN 201721264612 U CN201721264612 U CN 201721264612U CN 207218569 U CN207218569 U CN 207218569U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 103
- 230000008054 signal transmission Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 206010010254 Concussion Diseases 0.000 description 3
- 230000009514 concussion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
It the utility model is related to ultrasonic fingerprint identification technology field, more particularly to a kind of ultrasonic drive circuit and fingerprint Identification sensor.The metal-oxide-semiconductor Q1 of ultrasonic drive circuit drain electrode and external power source are electrically connected with,Metal-oxide-semiconductor Q1 source electrode simultaneously and resistance R3 first end,Inductance R1 first end,Metal-oxide-semiconductor Q2 drain electrode is electrically connected with,Metal-oxide-semiconductor Q2 source electrode simultaneously and metal-oxide-semiconductor Q3 source electrode,Electric capacity C1 the second end,Electric capacity C2 first end,The S1 pins for switching K1 are electrically connected with,And metal-oxide-semiconductor Q2 source ground,Metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end are electrically connected with,Inductance L1 the second end simultaneously and electric capacity C1 first end,The Top electrode of PZT (piezoelectric transducer) is electrically connected with,The bottom electrode of PZT (piezoelectric transducer) connects with switch K1 S3 pins,Switch K1 S2 pins connect with diode D3 positive pole,Diode D3 negative pole simultaneously and electric capacity C2 the second end,Acquisition module is electrically connected with.Fingerprint Identification sensor employs above-mentioned ultrasonic drive circuit.
Description
【Technical field】
It the utility model is related to ultrasonic fingerprint identification technology field, more particularly to a kind of ultrasonic drive circuit and fingerprint
Identification sensor.
【Background technology】
Living things feature recognition is the technology for distinguishing different biological features, including fingerprint, palmmprint, face, DNA, sound
Etc. identification technology.Fingerprint refers to the convex uneven lines of the positive surface skin fovea superior of the finger tips of people, the regular arrangement form of lines
Different line types.Fingerprint recognition refers to by the details of more different fingerprints to carry out identity authentication.Due to lifelong
Consistency, uniqueness and convenience, the application of fingerprint recognition are more and more extensive.Because ultrasonic wave is good for fingerprint recognition effect,
Increasing producer is directed to studying ultrasonic fingerprint sensor.And the ultrasonic wave of existing ultrasonic fingerprint identification sensor
Driving circuit structure is complicated, and caused ultrasonic wave is bad.
Therefore, how a kind of ultrasonic drive circuit simple in construction is provided, is just led into ultrasonic fingerprint identification technology
The demand in domain！
【Utility model content】
To overcome the ultrasonic drive circuit of existing ultrasonic fingerprint identification sensor complicated, caused ultrasonic wave
Bad technical problem, the utility model provide a kind of ultrasonic drive circuit and fingerprint Identification sensor.
The scheme that the utility model solves technical problem is to provide a kind of ultrasonic drive circuit, and it is used to produce ultrasonic wave
And the ultrasonic wave for receiving reflection includes metal-oxide-semiconductor Q1, MOS to produce electric signal transmission to acquisition module, the ultrasonic drive circuit
Pipe Q2, metal-oxide-semiconductor Q3, resistance R3, inductance L1, electric capacity C1, electric capacity C2, diode D3, PZT (piezoelectric transducer) and switch K1, the switch
Including pin S1, pin S2 and pin S3, when the switch connection is to S1, the pin S1 and S3 electrically conducts, the switch
When being switched to pin S2, the pin S2 and S3 is electrically conducted, and the drain electrode of the metal-oxide-semiconductor Q1 and external power source are electrically connected with, MOS
Pipe Q1 source electrode is electrically connected with resistance R3 first end, the drain electrode of inductance R1 first end, metal-oxide-semiconductor Q2 simultaneously, metal-oxide-semiconductor Q2's
Source electrode is electrically connected with metal-oxide-semiconductor Q3 source electrode, electric capacity C1 the second end, electric capacity C2 first end, switch K1 S1 pins simultaneously,
And metal-oxide-semiconductor Q2 source ground, metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end are electrically connected with, inductance L1 the second end is simultaneously
The Top electrode of first end, PZT (piezoelectric transducer) with electric capacity C1 is electrically connected with, and the bottom electrode of PZT (piezoelectric transducer) and switch K1 S3 draw
Pin connects, and the S2 pins for switching K1 connects with diode D3 positive pole, diode D3 negative pole while and electric capacity C2 the second end,
Acquisition module is electrically connected with.
Preferably, the ultrasonic drive circuit also includes resistance R1 and resistance R2, the source electrode of the metal-oxide-semiconductor Q1 pass through electricity
The grid for hindering R1 and metal-oxide-semiconductor Q1 is electrically connected with, and the source electrode of the metal-oxide-semiconductor Q2 is electrically connected by resistance R2 and metal-oxide-semiconductor Q2 grid
Connect.
Preferably, the ultrasonic drive circuit also includes diode D1, and the source electrode of the metal-oxide-semiconductor Q1 passes through diode D1
It is electrically connected with simultaneously with resistance R3 first end, the drain electrode of inductance R1 first end, metal-oxide-semiconductor Q2, and the source electrode of the metal-oxide-semiconductor Q1
It is electrically connected with diode D1 positive pole.
Preferably, the ultrasonic drive circuit also includes diode D2, and the negative pole of the diode D1 passes through diode
D2 and metal-oxide-semiconductor Q2 drain electrode are electrically connected with, and diode D2 positive pole and diode D1 negative pole are electrically connected with.
Preferably, the ultrasonic drive circuit also includes control module, the control module respectively with metal-oxide-semiconductor Q1, MOS
Pipe Q2, metal-oxide-semiconductor Q3 and switch are electrically connected with.
Preferably, the control module is single-chip microcomputer, FPGA or square wave drive circuit.
The utility model also provides a kind of fingerprint Identification sensor, and the fingerprint Identification sensor employs above-mentioned ultrasonic wave
Drive circuit.
Compared with prior art, ultrasonic drive circuit of the present utility model includes metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3,
Resistance R3, inductance L1, electric capacity C1, electric capacity C2, diode D3, PZT (piezoelectric transducer) and switch K1, the switch include pin S1, drawn
Pin S2 and pin S3, when the switch connection is to S1, the pin S1 and S3 electrically conducts, the switch connection to pin S2
When, the pin S2 and S3 is electrically conducted, and the drain electrode of the metal-oxide-semiconductor Q1 and external power source are electrically connected with, and metal-oxide-semiconductor Q1 source electrode is same
When and resistance R3 first end, the drain electrode of inductance R1 first end, metal-oxide-semiconductor Q2 be electrically connected with, metal-oxide-semiconductor Q2 source electrode simultaneously and
Metal-oxide-semiconductor Q3 source electrode, electric capacity C1 the second end, electric capacity C2 first end, switch K1 S1 pins are electrically connected with, and metal-oxide-semiconductor Q2
Source ground, metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end is electrically connected with, and inductance L1 the second end is simultaneously and electric capacity C1
First end, the Top electrode of PZT (piezoelectric transducer) are electrically connected with, and the bottom electrode of PZT (piezoelectric transducer) connects with switch K1 S3 pins, switchs
K1 S2 pins connect with diode D3 positive pole, and diode D3 negative pole is simultaneously and electric capacity C2 the second end, acquisition module are electric
Property connection, circuit structure is simple, produces that ultrasonic wave effect is good, and can receive the ultrasonic wave reflected to produce electric signal, and energy is right
Electric signal carries out detection, and caused signal quality is good.
Ultrasonic drive circuit of the present utility model also includes resistance R1 and resistance R2, and resistance R1 improves metal-oxide-semiconductor Q1's
Antijamming capability, resistance R2 improve metal-oxide-semiconductor Q2 antijamming capability.
Ultrasonic drive circuit of the present utility model also includes diode D1, diode D2, diode D1 and diode D2
Electric current reverse flow can be prevented to external power source.
The circuit structure of fingerprint Identification sensor of the present utility model is simple, and generation ultrasonic wave effect is good, and can receive anti-
The ultrasonic wave penetrated can carry out detection to produce electric signal to electric signal, and caused signal quality is good, and identification fingerprint is more smart
Really.
【Brief description of the drawings】
Fig. 1 is the particular circuit configurations schematic diagram of the utility model ultrasonic drive circuit.
Fig. 2 is the schematic diagram of the physical circuit preferred structure of the utility model ultrasonic drive circuit.
Fig. 3 is the schematic diagram of another preferred structure of physical circuit of the utility model ultrasonic drive circuit.
【Embodiment】
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only solving
The utility model is released, is not used to limit the utility model.
Referring to Fig. 1, the utility model provides a kind of ultrasonic drive circuit 10, it is used to produce ultrasonic wave and received anti-
The ultrasonic wave penetrated is to produce electric signal transmission to acquisition module.
The ultrasonic drive circuit 10 includes metal-oxide-semiconductor Q1, Q2, Q3, resistance R3, inductance L1, diode D3, electric capacity C1, C2,
PZT (piezoelectric transducer) 11 and switch K1.
Wherein, the switch K1 is single-pole double-throw switch (SPDT), including pin S1, pin S2 and pin S3, the switch K1 draw
Pin S1 can be switched to pin S3 by hilted broadsword so that the pin S1 and S3 is electrically conducted, and the switch K1 pins S2 also may be used
To be switched to pin S3 by hilted broadsword so that the pin S2 and S3 electrically conducts.It is preferably analog switch to switch K1.
Metal-oxide-semiconductor Q1 drain electrode and external power source VCC are electrically connected with, metal-oxide-semiconductor Q1 source electrode simultaneously and resistance R3 first end,
Inductance L1 first end, metal-oxide-semiconductor Q2 drain electrode are electrically connected with.
Metal-oxide-semiconductor Q2 source electrode while and metal-oxide-semiconductor Q3 source electrode, electric capacity C1 the second end, electric capacity C2 first end, switch K1
S1 pins be electrically connected with, and metal-oxide-semiconductor Q2 source ground.
Metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end are electrically connected with, inductance L1 the second end simultaneously and electric capacity C1 the
One end, the Top electrode of PZT (piezoelectric transducer) 11 are electrically connected with, and the bottom electrode of PZT (piezoelectric transducer) 11 connects with switch K1 S3 pins, opens
The S2 pins for closing K1 connects with diode D3 positive pole, diode D3 negative pole while and electric capacity C2 the second end, acquisition module
It is electrically connected with.It is appreciated that the first end of each element described in the utility model, the second end, it is merely to better illustrate
The annexation of each element, which specific end of original paper is not limited as first end, first end and the second end such as resistance R3, its
Respectively resistance R3 both ends are used for the node electrically connected.The Top electrode of PZT (piezoelectric transducer) 11, bottom electrode again are just for preferably
Illustrate the annexation of each element, do not limit which the specific end of PZT (piezoelectric transducer) 11 as Top electrode or bottom electrode.This implementation
Metal-oxide-semiconductor Q1, Q2, Q3 in example are N-channel MOS pipe.
Referring to Fig. 2, ultrasonic drive circuit 10 preferably also includes resistance R1 and resistance R2, the source electrode of the metal-oxide-semiconductor Q1
It is electrically connected with by resistance R1 and metal-oxide-semiconductor Q1 grid, the source electrode of the metal-oxide-semiconductor Q2 passes through resistance R2 and metal-oxide-semiconductor Q2 grid
It is electrically connected with.Resistance R1 improves metal-oxide-semiconductor Q1 antijamming capability, and resistance R2 improves metal-oxide-semiconductor Q2 antijamming capability.
Referring to Fig. 3, ultrasonic drive circuit 10 preferably also includes diode D1.Metal-oxide-semiconductor Q1 source electrode passes through diode
D1 is electrically connected with resistance R3 first end, the drain electrode of inductance R1 first end, metal-oxide-semiconductor Q2 simultaneously.Wherein, metal-oxide-semiconductor Q1 source
Pole and diode D1 positive pole are electrically connected with, diode D1 negative pole simultaneously and resistance R3 first end, inductance R1 first end,
Metal-oxide-semiconductor Q2 drain electrode is electrically connected with.
Ultrasonic drive circuit 10 preferably also includes diode D2.Diode D1 negative pole passes through diode D2 and metal-oxide-semiconductor
Q2 drain electrode is electrically connected with.Wherein, diode D2 positive pole and diode D1 negative pole be electrically connected with, diode D2 negative pole and
Metal-oxide-semiconductor Q2 drain electrode is electrically connected with.Diode D1 and diode D2 can prevent electric current reverse flow to external power source VCC.
Ultrasonic drive circuit 10 preferably also includes control module (not shown), the control module respectively with metal-oxide-semiconductor Q1,
Metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 and switch K1 are electrically connected with.Control module can send grids of the square-wave signal PWM1 to metal-oxide-semiconductor Q1, hair
Grids of the square-wave signal PWM2 to metal-oxide-semiconductor Q2 is sent, control module can send grids of the square-wave signal PWM3 to metal-oxide-semiconductor Q3, control
Simultaneously energy controlling switch K1 is switched to S1 pins or is switched to S2 pins module, to control S1 pins and S3 pins to electrically conduct, or
S2 and S3 pins are controlled to be electrically connected with.Preferably, control module is single-chip microcomputer, FPGA (Field-Programmable Gate
Array, field programmable gate array) or square wave drive circuit.
When in use, circuit starting stage, control module make switch K1 be switched to pin S1, and square-wave signal PWM1 is low electricity
Flat, square-wave signal PWM2 is high level, so as to electrically open circuit, metal-oxide-semiconductor Q2 source electrode and leakage between metal-oxide-semiconductor Q1 source electrode and drain electrode
Electrically conducted between pole, now form electric capacity C1- inductance L1- diode D2-MOS pipes Q2- ground connection GND conductive loops, make electricity
Hold the LC concussions loop that C1 and inductance L1 is formed to start to shake；Square-wave signal PWM1 is high level afterwards, and square-wave signal PWM2 is
Low level, so as to be electrically conducted between metal-oxide-semiconductor Q1 source electrode and drain electrode, electrically open circuit between metal-oxide-semiconductor Q2 source electrode and drain electrode, this
When form external power source VCC-MOS pipe Q1- diode D1- inductance L1- electric capacity C1 ground connection GND conductive loops, make external power source
VCC fills energy to the LC concussions loop that electric capacity C1 and inductance L1 is formed, and now forms a cycle Z1.In cycle Z1, now press
Electric transducer 11 and electric capacity C1 are in parallel, and the both ends of PZT (piezoelectric transducer) 11 also produce the voltage of concussion, so as to which PZT (piezoelectric transducer) 11 produces
Raw ultrasonic wave.
After 3 cycle Z1, control module makes square-wave signal PWM1 and PWM2 while is low level, square-wave signal
PWM3 is high level, electrical between metal-oxide-semiconductor Q2 source electrode and drain electrode so as to electrically open circuit between metal-oxide-semiconductor Q1 source electrode and drain electrode
Open circuit, now forms electric capacity C1- inductance L1- resistance R3 conductive loops, and the electric energy on inductance L1 and electric capacity C1 is fast by resistance R3
Speed consumption, PZT (piezoelectric transducer) 11 are changed into low potential, and then control module makes switch K1 be switched to pin S2, and PZT (piezoelectric transducer) 11 connects
The ultrasonic wave reflected is received, PZT (piezoelectric transducer) 11 produces electric signal, and electric signal passes through diode D3 and electric capacity C2 detection
Module collection is collected afterwards.Now complete cycle Z2 is handled from the starting stage.
It is appreciated that can also pass through 2,4,5,6 cycle Z1, control module just controls square-wave signal PWM1 and PWM2 same
When be low level, square-wave signal PWM3 is high level.Preferably, low and high level conversion is carried out in square-wave signal PWM1 and PWM2
When, square-wave signal PWM1 and PWM2 frequency are all 8MHz, and square-wave signal PWM1 and PWM2 dutycycle are all 0.5.
The utility model also provides a kind of fingerprint Identification sensor, and the fingerprint Identification sensor employs above-mentioned ultrasonic wave
Drive circuit 10.
Compared with prior art, ultrasonic drive circuit of the present utility model includes metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3,
Resistance R3, inductance L1, electric capacity C1, electric capacity C2, diode D3, PZT (piezoelectric transducer) and switch K1, the switch include pin S1, drawn
Pin S2 and pin S3, when the switch connection is to S1, the pin S1 and S3 electrically conducts, the switch connection to pin S2
When, the pin S2 and S3 is electrically conducted, and the drain electrode of the metal-oxide-semiconductor Q1 and external power source are electrically connected with, and metal-oxide-semiconductor Q1 source electrode is same
When and resistance R3 first end, the drain electrode of inductance R1 first end, metal-oxide-semiconductor Q2 be electrically connected with, metal-oxide-semiconductor Q2 source electrode simultaneously and
Metal-oxide-semiconductor Q3 source electrode, electric capacity C1 the second end, electric capacity C2 first end, switch K1 S1 pins are electrically connected with, and metal-oxide-semiconductor Q2
Source ground, metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end is electrically connected with, and inductance L1 the second end is simultaneously and electric capacity C1
First end, the Top electrode of PZT (piezoelectric transducer) are electrically connected with, and the bottom electrode of PZT (piezoelectric transducer) connects with switch K1 S3 pins, switchs
K1 S2 pins connect with diode D3 positive pole, and diode D3 negative pole is simultaneously and electric capacity C2 the second end, acquisition module are electric
Property connection, circuit structure is simple, produces that ultrasonic wave effect is good, and can receive the ultrasonic wave reflected to produce electric signal, and energy is right
Electric signal carries out detection, and caused signal quality is good.
Ultrasonic drive circuit of the present utility model also includes resistance R1 and resistance R2, and resistance R1 improves metal-oxide-semiconductor Q1's
Antijamming capability, resistance R2 improve metal-oxide-semiconductor Q2 antijamming capability.
Ultrasonic drive circuit of the present utility model also includes diode D1, diode D2, diode D1 and diode D2
Electric current reverse flow can be prevented to external power source.
The circuit structure of fingerprint Identification sensor of the present utility model is simple, and generation ultrasonic wave effect is good, and can receive anti-
The ultrasonic wave penetrated can carry out detection to produce electric signal to electric signal, and caused signal quality is good, and identification fingerprint is more smart
Really.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Any modification made within the principle of utility model, equivalent substitution and improvement etc. all should include the scope of protection of the utility model
Within.
Claims (7)
1. a kind of ultrasonic drive circuit, its be used to producing ultrasonic wave and receive the ultrasonic wave of reflection with produce electric signal transmission to
Acquisition module, it is characterised in that：The ultrasonic drive circuit includes metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3, resistance R3, inductance
L1, electric capacity C1, electric capacity C2, diode D3, PZT (piezoelectric transducer) and switch K1, the switch include pin S1, pin S2 and pin
S3, when the switch connection is to S1, the pin S1 and S3 electrically conducts, when the switch connection is to pin S2, the pin
S2 and S3 are electrically conducted, and the drain electrode of the metal-oxide-semiconductor Q1 and external power source are electrically connected with, metal-oxide-semiconductor Q1 source electrode while and resistance R3
The drain electrode of first end, inductance R1 first end, metal-oxide-semiconductor Q2 be electrically connected with, metal-oxide-semiconductor Q2 source electrode simultaneously and metal-oxide-semiconductor Q3 source
Pole, electric capacity C1 the second end, electric capacity C2 first end, switch K1 S1 pins are electrically connected with, and metal-oxide-semiconductor Q2 source ground,
Metal-oxide-semiconductor Q3 drain electrode and resistance R3 the second end are electrically connected with, inductance L1 the second end simultaneously and electric capacity C1 first end, piezoelectricity
The Top electrode of transducer is electrically connected with, and the bottom electrode of PZT (piezoelectric transducer) connects with switch K1 S3 pins, switchs K1 S2 pins
Connected with diode D3 positive pole, diode D3 negative pole is electrically connected with electric capacity C2 the second end, acquisition module simultaneously.
2. ultrasonic drive circuit as claimed in claim 1, it is characterised in that：The ultrasonic drive circuit also includes resistance
R1 and resistance R2, the metal-oxide-semiconductor Q1 source electrode are electrically connected with by resistance R1 and metal-oxide-semiconductor Q1 grid, the source of the metal-oxide-semiconductor Q2
Pole is electrically connected with by resistance R2 and metal-oxide-semiconductor Q2 grid.
3. ultrasonic drive circuit as claimed in claim 1, it is characterised in that：The ultrasonic drive circuit also includes two poles
Pipe D1, the metal-oxide-semiconductor Q1 source electrode pass through diode D1 while and resistance R3 first end, inductance R1 first end, metal-oxide-semiconductor Q2
Drain electrode be electrically connected with, and the source electrode of the metal-oxide-semiconductor Q1 and diode D1 positive pole be electrically connected with.
4. ultrasonic drive circuit as claimed in claim 3, it is characterised in that：The ultrasonic drive circuit also includes two poles
Pipe D2, the diode D1 negative pole are electrically connected with by diode D2 and metal-oxide-semiconductor Q2 drain electrode, and diode D2 positive pole and
Diode D1 negative pole is electrically connected with.
5. ultrasonic drive circuit as claimed in claim 1, it is characterised in that：The ultrasonic drive circuit also includes control
Module, the control module are electrically connected with metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 and switch respectively.
6. ultrasonic drive circuit as claimed in claim 5, it is characterised in that：The control module be single-chip microcomputer, FPGA or
Square wave drive circuit.
A kind of 7. fingerprint Identification sensor, it is characterised in that：The fingerprint Identification sensor employs any one of claim 1-6 institutes
The ultrasonic drive circuit stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721264612.7U CN207218569U (en) | 2017-09-28 | 2017-09-28 | Ultrasonic drive circuit and fingerprint identification sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721264612.7U CN207218569U (en) | 2017-09-28 | 2017-09-28 | Ultrasonic drive circuit and fingerprint identification sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207218569U true CN207218569U (en) | 2018-04-10 |
Family
ID=61819748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721264612.7U Withdrawn - After Issue CN207218569U (en) | 2017-09-28 | 2017-09-28 | Ultrasonic drive circuit and fingerprint identification sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207218569U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107659204A (en) * | 2017-09-28 | 2018-02-02 | 吴露 | Ultrasonic drive circuit and fingerprint Identification sensor |
-
2017
- 2017-09-28 CN CN201721264612.7U patent/CN207218569U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107659204A (en) * | 2017-09-28 | 2018-02-02 | 吴露 | Ultrasonic drive circuit and fingerprint Identification sensor |
| CN107659204B (en) * | 2017-09-28 | 2023-12-26 | 成都大超科技有限公司 | Ultrasonic driving circuit and fingerprint identification sensor |
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Effective date of registration: 20190604 Address after: 610000 Shunsheng Road, Zhengxing Street, Tianfu New District, Chengdu City, Sichuan Province Patentee after: CHENGDU YIDAO TECHNOLOGY PARTNERSHIP (L.P.) Address before: 611731 No. 2103, Building No. 798, Tianfu First Street, Chengdu High-tech Zone, Chengdu, Sichuan Province Patentee before: Wu Lu |
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Effective date of registration: 20200629 Address after: No.88, Yingbin Avenue, Shouan Town, Pujiang County, Chengdu City, Sichuan Province Patentee after: Chengdu Dachao Technology Co.,Ltd. Address before: 610000 Sichuan city of Chengdu province Tianfu Zheng Xing Shun Shing Street No. 172 Patentee before: CHENGDU YIDAO TECHNOLOGY PARTNERSHIP (L.P.) |
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Effective date of registration: 20201015 Address after: No.102, 1st floor, No.151, Tianxin Road, high tech Zone, Chengdu, Sichuan 610000 Patentee after: Chengdu core technology Co.,Ltd. Address before: No.88, Yingbin Avenue, Shouan Town, Pujiang County, Chengdu City, Sichuan Province Patentee before: Chengdu Dachao Technology Co.,Ltd. |
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