CN105743357B - A kind of high-frequency ultrasonic driver - Google Patents
A kind of high-frequency ultrasonic driver Download PDFInfo
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- CN105743357B CN105743357B CN201610257568.0A CN201610257568A CN105743357B CN 105743357 B CN105743357 B CN 105743357B CN 201610257568 A CN201610257568 A CN 201610257568A CN 105743357 B CN105743357 B CN 105743357B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
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Abstract
The present invention relates to a kind of high-frequency ultrasonic drivers, including signal processing module, the input terminal of the output end connection grid electrode drive module of signal processing module, the input terminal of the output end connection push-pull drive module of grid electrode drive module, the input terminal of the output end connection ultrasonic transducer of push-pull drive module, the output end of the test side connection push-pull drive module of overcurrent protection module, the input terminal of the output end connection signal processing module of overcurrent protection module, the signal processing module is electrically connected in electric module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module.Increase gate drive current, switch mosfet speed can be increased substantially, have many advantages, such as that small, frequency is high, efficient.
Description
Technical field
The invention belongs to technical field of medical equipment more particularly to a kind of high-frequency ultrasonic drives for ultrasonic therapeutic apparatus
Dynamic device.
Background technology
Ultrasonic drive effect is the high-frequency ac electric signal that alternating current is converted into matching with ultrasonic transducer, is driven
Dynamic ultrasonic transducer work.Traditional driver all drives high power low-frequency super using self-oscillation or bridge switching circuit
Sonic transducer between the basic 20KHz ~ 120kHz of frequency, is mostly used in fields such as detection, cleanings.
Existing ultrasonic drive circuit structure is complicated, and working frequency is between 20KHz ~ 120KHz, far below ultrasound
Frequency band used in therapeutic equipment（0.8MHz~15MHz）.Volume is larger simultaneously, cannot meet ultrasonic therapeutic apparatus miniaturization
Design object.
Invention content
The purpose of the present invention is to provide a kind of high-frequency ultrasonic drivers, it is intended to solve above-mentioned technical problem.
The invention is realized in this way a kind of high-frequency ultrasonic driver, the high-frequency ultrasonic driver includes signal
Processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and power supply module, the signal
The output end of processing module connects the input terminal of grid electrode drive module, is recommended described in the output end connection of the grid electrode drive module
The input terminal of drive module, the output end of the push-pull drive module connect the input terminal of the ultrasonic transducer, the overcurrent
The test side of protection module connects the output end of the push-pull drive module, described in the output end connection of the overcurrent protection module
The signal processing module, grid electrode drive module, push-pull drive mould is electrically connected in signal processing module, the power supply module
Block, ultrasonic transducer, overcurrent protection module.
The present invention further technical solution be：The overcurrent protection module by resistance detection driving current size, and
It is compared with preset value and then closes driving output immediately more than preset value.
The present invention further technical solution be：The high-frequency ultrasonic driver further includes central processing unit（MCU）, described
The output end of central processing unit connects the input terminal of the signal processing module, and the power supply module is electrically connected the centre
Manage device（MCU）.
The present invention further technical solution be：The signal processing module includes operational amplifier U6A, operational amplifier
U9A, resistance R7, resistance R9, chip U4B, capacitance C16, nor gate U5A, nor gate U5B and NAND gate U8A, the operation amplifier
The 7th foot of device U6A is separately connected one end of the resistance R7 and the output end ClkA of central processing unit, the operational amplifier
The 8th foot of U6A is separately connected the other end of the resistance R7 and the output end ClkB of central processing unit, the operational amplifier
The 2nd foot of U6A connects the 11st foot of the chip U4B, and the 14th foot of the chip U4B is separately connected power supply VCC1, capacitance C16
One end and chip U4B the 10th, 14 feet, the 9th foot of the chip U4B connects the 1st foot of the nor gate U5A, the core
Piece U4B the 8th, 12 feet connect the 6th foot of the nor gate U5B, the 7th foot of the operational amplifier U9A is separately connected described
One end of resistance R9 and the output end Ctr_B of central processing unit, the 8th foot of the operational amplifier U9A are separately connected the electricity
The 2nd foot for hindering the other end of R9 and the output end Ctr_A, the operational amplifier U9A of central processing unit connects the NAND gate
The 2nd foot of U8A, the 3rd foot of the NAND gate U8A be separately connected the nor gate U5A the 2nd foot and nor gate U5B the 7th
Foot, the 4th foot of the nor gate U5A, the other end of capacitance C16, the 7th foot of chip U4B, operational amplifier U6A the 4th foot and
The 7th foot of NAND gate U8A is grounded, the 1st foot of the operational amplifier U6A, the 8th foot of nor gate U5A and NAND gate U8A
14th foot is all connected with power supply VCC1.
The present invention further technical solution be：The grid electrode drive module includes resistance R6, resistance R8, chip U2, core
Piece U3, resistance R3 and resistance R5, the chip U2 the 2nd, 5 feet be separately connected one end and the nor gate U5A of the resistance R6
3rd foot, the chip U2 the 4th, 6 feet be separately connected one end of the resistance R3, the chip U3 the 2nd, 5 feet are separately connected
One end of the resistance R8 and the 5th foot of nor gate U5B, the chip U3 the 4th, 6 feet be separately connected the one of the resistance R5
End, the 1st foot of the chip U2, the 1st foot, the other end of resistance R6 and the other end of resistance R8 of chip U3 are all connected with power supply
VCC2, the 3rd foot of the chip U2 and the 3rd foot of chip U3 are grounded.
The present invention further technical solution be：The push-pull drive module include metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, capacitance C17,
Capacitance C19, capacitance C18, transformer T1 and crystal oscillator Y1, the grid of the metal-oxide-semiconductor Q1 connects the other end of the resistance R3, described
The drain electrode of metal-oxide-semiconductor Q1 is separately connected one end of the capacitance C17 and the 1st foot of input of transformer T1, the source electrode of the metal-oxide-semiconductor Q1
It is separately connected the source electrode of the other end of the capacitance C17, one end of capacitance C19 and metal-oxide-semiconductor Q2, the grid of the metal-oxide-semiconductor Q2 connects
Connect the other end of the resistance R5, the drain electrode of the metal-oxide-semiconductor Q2 is separately connected the other end and transformer T1 of the capacitance C19
Input the 2nd foot, the 1st foot of output of the transformer T1 is separately connected one end of the capacitance C18, one end of crystal oscillator Y1 and defeated
Go out, the 2nd foot of output of the transformer T1 is separately connected the other end of the capacitance C18, the other end of crystal oscillator Y1 and output.
The present invention further technical solution be：The overcurrent protection module include resistance R18, resistance R19, resistance R13,
Resistance R16, capacitance C35, resistance R21, rheostat RP1, operational amplifier U10B, resistance R14, resistance R11, capacitance C39, voltage stabilizing
Diode D4, operational amplifier U10A, resistance R20, resistance R15, resistance R10, chip U4A and driver DRV, the resistance
One end of R13 be separately connected one end of the resistance R18, one end of resistance R19, the other end of capacitance C17, capacitance C19 it is another
One end, the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 source electrode, the other end of the resistance R13 is separately connected the one of the resistance R16
The negative input of the positive input at end, one end of capacitance C35 and operational amplifier U10B, the operational amplifier U10B connects the change
The sliding end of device RP1 is hindered, one end of the rheostat RP1 is through the resistance R21 connection power supplys VCC1, the operational amplifier
The output end of U10B connects one end of the resistance R14, and the other end of the resistance R14 is separately connected the one of the capacitance C39
The positive input of end and operational amplifier U10A, the negative input of the operational amplifier U10A are separately connected the moon of zener diode D4
The output end of pole and one end of resistance R11, the operational amplifier U10A is separately connected one end and the resistance of the resistance R20
One end of R15, the other end of the resistance R15 connect the 3rd foot of the chip U4A, and the 6th foot of the chip U4A connects respectively
The 1st foot of the NAND gate U8A and the input terminal of driver DRV are connect, the 2nd foot of the chip U4A is through the resistance R10 connections
The other end of power supply VCC1, the 8th feet of operational amplifier U10A and resistance R11 are all connected with power supply VCC1, the resistance R20's
The other end, the 4th foot of operational amplifier U10A, the anode of zener diode D4, the other end of capacitance C39, rheostat RP1 it is another
One end, the other end of resistance R16, the other end of capacitance C35, the other end of resistance R18 and resistance R19 the other end be grounded.
The present invention further technical solution be：The switching frequency of described metal-oxide-semiconductor Q1, Q2 are 0.8MHz-15 MHz.
The present invention further technical solution be：The transmission delay of the grid electrode drive module is less than 2ns.
The present invention further technical solution be：The maximum drive current of described metal-oxide-semiconductor Q1, Q2 are 9A.
The beneficial effects of the invention are as follows：Increase gate drive current, switch mosfet speed can be increased substantially, had
Small, the advantages that frequency is high, efficient.Using entering the very small MOSFET of capacitance, at the same it is very fast using switching speed
Gate drivers make final stage impedance-matching transformer, the work of ultrasonic drivers using magnetic conductivity for 10 nickel zinc magnet ring
Frequency range 0.8MHz ~ 15MHz, 0 ~ 30W of output power.This high-frequency ultrasonic driver integrated level is high, and volume is very small, can be square
Civilian dress fits in mobile and portable device.
Description of the drawings
Fig. 1 is the structure diagram of high-frequency ultrasonic driver provided in an embodiment of the present invention.
Fig. 2 is the electrical schematic diagram of high-frequency ultrasonic driver provided in an embodiment of the present invention.
Specific implementation mode
As shown in Figure 1, 2, high-frequency ultrasonic driver provided by the invention, the high-frequency ultrasonic driver includes signal
Processing module, grid electrode drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and power supply module, the signal
The output end of processing module connects the input terminal of grid electrode drive module, is recommended described in the output end connection of the grid electrode drive module
The input terminal of drive module, the output end of the push-pull drive module connect the input terminal of the ultrasonic transducer, the overcurrent
The test side of protection module connects the output end of the push-pull drive module, described in the output end connection of the overcurrent protection module
The signal processing module, grid electrode drive module, push-pull drive mould is electrically connected in signal processing module, the power supply module
Block, ultrasonic transducer, overcurrent protection module.Increase gate drive current, switch mosfet speed can be increased substantially, had
Small, the advantages that frequency is high, efficient.Using entering the very small MOSFET of capacitance, at the same it is very fast using switching speed
Gate drivers make final stage impedance-matching transformer, the work of ultrasonic drivers using magnetic conductivity for 10 nickel zinc magnet ring
Frequency range 0.8MHz ~ 15MHz, 0 ~ 30W of output power.This high-frequency ultrasonic driver integrated level is high, and volume is very small, can be square
Civilian dress fits in mobile and portable device.
The overcurrent protection module is compared with preset value more than preset value by resistance detection driving current size
Driving output is then closed immediately.
The high-frequency ultrasonic driver further includes central processing unit（MCU）, the output end connection institute of the central processing unit
The input terminal of signal processing module is stated, the power supply module is electrically connected the central processing unit（MCU）.
The signal processing module includes operational amplifier U6A, operational amplifier U9A, resistance R7, resistance R9, chip
U4B, capacitance C16, nor gate U5A, nor gate U5B and NAND gate U8A, the 7th foot of the operational amplifier U6A are separately connected institute
It states one end of resistance R7 and the output end ClkA of central processing unit, the 8th foot of the operational amplifier U6A is separately connected the electricity
The 2nd foot for hindering the other end of R7 and the output end ClkB, the operational amplifier U6A of central processing unit connects the chip U4B
The 11st foot, the 14th foot of the chip U4B is separately connected the 10th, the 14 of power supply VCC1, one end of capacitance C16 and chip U4B
Foot, the 9th foot of the chip U4B connect the 1st foot of the nor gate U5A, the chip U4B the 8th, the connection of 12 feet it is described or
The 6th foot of NOT gate U5B, the 7th foot of the operational amplifier U9A are separately connected one end and the central processing unit of the resistance R9
The 8th foot of output end Ctr_B, the operational amplifier U9A is separately connected the other end and central processing unit of the resistance R9
The 2nd foot of output end Ctr_A, the operational amplifier U9A connect the 2nd foot of the NAND gate U8A, the NAND gate U8A's
3rd foot is separately connected the 2nd foot of the nor gate U5A and the 7th foot of nor gate U5B, the 4th foot, the capacitance of the nor gate U5A
The other end of C16, the 7th foot of chip U4B, the 4th foot of operational amplifier U6A and the 7th foot of NAND gate U8A are grounded, described
The 1st foot, the 8th foot of nor gate U5A and the 14th foot of NAND gate U8A of operational amplifier U6A is all connected with power supply VCC1.
The grid electrode drive module includes resistance R6, resistance R8, chip U2, chip U3, resistance R3 and resistance R5, the core
Piece U2 the 2nd, 5 feet be separately connected one end of the resistance R6 and the 3rd foot of nor gate U5A, the chip U2 the 4th, 6 feet point
Do not connect one end of the resistance R3, the chip U3 the 2nd, 5 feet be separately connected one end and the nor gate U5B of the resistance R8
The 5th foot, the chip U3 the 4th, 6 feet be separately connected one end of the resistance R5, the 1st foot, the chip U3 of the chip U2
The 1st foot, the other end of resistance R6 and the other end of resistance R8 be all connected with power supply VCC2, the 3rd foot and chip of the chip U2
The 3rd foot of U3 is grounded.
The push-pull drive module includes metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, capacitance C17, capacitance C19, capacitance C18, transformer T1
And crystal oscillator Y1, the grid of the metal-oxide-semiconductor Q1 connect the other end of the resistance R3, the drain electrode of the metal-oxide-semiconductor Q1 is separately connected institute
One end of capacitance C17 and the 1st foot of input of transformer T1 are stated, the source electrode of the metal-oxide-semiconductor Q1 is separately connected the another of the capacitance C17
The source electrode of one end, one end of capacitance C19 and metal-oxide-semiconductor Q2, the grid of the metal-oxide-semiconductor Q2 connect the other end of the resistance R5, institute
The drain electrode for stating metal-oxide-semiconductor Q2 is separately connected the other end of the capacitance C19 and the 2nd foot of input of transformer T1, the transformer T1
The 1st foot of output be separately connected one end of the capacitance C18, one end of crystal oscillator Y1 and output, the output the 2nd of the transformer T1
Foot is separately connected the other end of the capacitance C18, the other end of crystal oscillator Y1 and output.
The overcurrent protection module include resistance R18, resistance R19, resistance R13, resistance R16, capacitance C35, resistance R21,
Rheostat RP1, operational amplifier U10B, resistance R14, resistance R11, capacitance C39, zener diode D4, operational amplifier U10A,
Resistance R20, resistance R15, resistance R10, chip U4A and driver DRV, one end of the resistance R13 are separately connected the resistance
One end of R18, one end of resistance R19, the other end of capacitance C17, the other end of capacitance C19, metal-oxide-semiconductor Q1 source electrode and metal-oxide-semiconductor
The other end of the source electrode of Q2, the resistance R13 is separately connected one end of the resistance R16, one end of capacitance C35 and operation amplifier
The positive input of device U10B, the negative input of the operational amplifier U10B connect the sliding end of the rheostat RP1, the rheostat
One end of RP1 connects the resistance R14 through the resistance R21 connection power supplys VCC1, the output end of the operational amplifier U10B
One end, the other end of the resistance R14 is separately connected one end of the capacitance C39 and the positive input of operational amplifier U10A,
The negative input of the operational amplifier U10A is separately connected the cathode of zener diode D4 and one end of resistance R11, the operation
The output end of amplifier U10A is separately connected one end of the resistance R20 and one end of resistance R15, and the resistance R15's is another
End connects the 3rd foot of the chip U4A, and the 6th foot of the chip U4A is separately connected the 1st foot and the driving of the NAND gate U8A
The input terminal of device DRV, the 2nd foot of the chip U4A is through the resistance R10 connections power supply VCC1, the operational amplifier U10A
The other end of 8th foot and resistance R11 are all connected with power supply VCC1, the other end of the resistance R20, the 4th of operational amplifier U10A the
Foot, the anode of zener diode D4, the other end of capacitance C39, the other end of rheostat RP1, the other end of resistance R16, capacitance
The other end of the other end of C35, the other end of resistance R18 and resistance R19 is grounded.
The switching frequency of described metal-oxide-semiconductor Q1, Q2 are 0.8MHz-15 MHz.
The transmission delay of the grid electrode drive module is less than 2ns.
The maximum drive current of described metal-oxide-semiconductor Q1, Q2 are 9A.
Chip U4B is identical with chip U4A, model 74LS74.
Chip U2 is identical with chip U3, model ZXGD3002E6.
U10A is identical with U10B, model AD8034AR.
The present invention devises a kind of high-frequency ultrasonic driver used for ultrasonic therapeutic apparatus, which uses and push away
Circuit structure is drawn, circuit block diagram is shown in that attached drawing 1, including signal processing module, grid electrode drive module, push-pull drive module, overcurrent are protected
Protect module, power supply module.The power supply module respectively with signal processing module, grid electrode drive module, push-pull drive module, mistake
Protection module is flowed to be connected.Signal processing module receives the differential signal that signal source generates, and decides whether to send out to grid electrode drive module
Go out enable signal.Grid electrode drive module is responsible for driving MOFET grids, provides big input current, peak point current is up to 9A, transmission
Postpone down to 2ns.Push-pull drive module is responsible for driving ultrasonic transducer, generates required ultrasonic wave.The part passes through self-control
Nickel zinc magnetic ring transformer so that drive efficiency is reached maximum as impedance matching.Overcurrent protection part is driven using resistance detection
Size of current, while being compared with limits value, it will close and export immediately if beyond limits value, to prevent dangerous hair
It is raw.
As shown in Fig. 2, it is the schematic diagram of this driver.Signal processing module, U6 and U9 are responsible for what processing was communicated with MCU
Differential signal, while the signal of frequency multiplication is subjected to 2 frequency dividings, export the working frequency needed for ultrasonic transducer.And after being supplied to and
Gate driving part.Grid electrode drive module, U2 and U3 provide big gate drive current, while having very fast switch speed
Degree, transmission delay is down to 2ns.By adjusting the resistance value of R6 and R8, in that case it can be decided that the size of gate drive current, selection are suitable
Gate drive current can make system effectiveness highest.Push-pull drive module, including Q1 and Q2 have very small input capacitance, from
And it ensure that switching frequency is up to the induced electromotive force of 15MHz, C17 and C19 for inhibiting transformer, protects Q1 and Q2 not anti-
To breakdown.Overcurrent protection module, R18 and R19 are sampling resistor, current value are converted to voltage value, while by comparing device ratio
Compared with, when system power exceed preset value when, will produce a rising edge pulse signal, which will feed back to signal processing mould
Block, to which closing will be exported.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (9)
1. a kind of high-frequency ultrasonic driver, which is characterized in that the high-frequency ultrasonic driver includes signal processing module, grid
Pole drive module, push-pull drive module, ultrasonic transducer, overcurrent protection module and power supply module, the signal processing module
Output end connects the input terminal of grid electrode drive module, and the output end of the grid electrode drive module connects the push-pull drive module
Input terminal, the output end of the push-pull drive module connect the input terminal of the ultrasonic transducer, the overcurrent protection module
Test side connects the output end of the push-pull drive module, and the output end of the overcurrent protection module connects the signal processing mould
Block, the power supply module are electrically connected the signal processing module, grid electrode drive module, push-pull drive module, ultrasound and change
It can device, overcurrent protection module；
The signal processing module includes operational amplifier U6A, operational amplifier U9A, resistance R7, resistance R9, chip U4B, electricity
Hold C16, nor gate U5A, nor gate U5B and NAND gate U8A, the 7th foot of the operational amplifier U6A and is separately connected the resistance
One end of R7 and the output end ClkB of central processing unit, the 8th foot of the operational amplifier U6A are separately connected the resistance R7's
The output end ClkA of the other end and central processing unit, the 2nd foot of the operational amplifier U6A connect the 11st of the chip U4B
14th foot of foot, the chip U4B is separately connected the 10th of power supply VCC1, one end of capacitance C16 and chip U4B the, 13 feet, described
The 9th foot of chip U4B connects the 1st foot of the nor gate U5A, the chip U4B the 8th, 12 feet connect the nor gate U5B
The 6th foot, the 7th foot of the operational amplifier U9A is separately connected one end of the resistance R9 and the output end of central processing unit
The 8th foot of Ctr_B, the operational amplifier U9A are separately connected the other end of the resistance R9 and the output end of central processing unit
The 2nd foot of Ctr_A, the operational amplifier U9A connect the 2nd foot of the NAND gate U8A, the 3rd foot point of the NAND gate U8A
Do not connect the 2nd foot of the nor gate U5A and the 7th foot of nor gate U5B, the 4th foot of the nor gate U5A, capacitance C16 it is another
One end, the 7th foot of chip U4B, the 4th foot of operational amplifier U6A and the 7th foot of NAND gate U8A are grounded, the operation amplifier
The 1st foot, the 8th foot of nor gate U5A and the 14th foot of NAND gate U8A of device U6A is all connected with power supply VCC1；The chip U4B is adopted
It is 74LS74 model chips.
2. high-frequency ultrasonic driver according to claim 1, which is characterized in that the overcurrent protection module passes through resistance
Driving current size is detected, and is compared with preset value and then closes driving output immediately more than preset value.
3. high-frequency ultrasonic driver according to claim 1 or 2, which is characterized in that the high-frequency ultrasonic driver is also
Including central processing unit（MCU）, the output end of the central processing unit connects the input terminal of the signal processing module, the confession
Electric module is electrically connected the central processing unit（MCU）.
4. high-frequency ultrasonic driver according to claim 3, which is characterized in that the grid electrode drive module includes resistance
R6, resistance R8, chip U2, chip U3, the 2nd of resistance R3 and resistance R5, the chip U2 the, 5 feet are separately connected the resistance R6
One end and nor gate U5A the 3rd foot, the chip U2 the 4th, 6 feet be separately connected one end of the resistance R3, the chip
U3 the 2nd, 5 feet be separately connected one end of the resistance R8 and the 5th foot of nor gate U5B, the chip U3 the 4th, 6 feet difference
Connect one end of the resistance R5, the 1st foot of the chip U2, the 1st foot of chip U3, the other end of resistance R6 and resistance R8
The other end is all connected with power supply VCC2, and the 3rd foot of the chip U2 and the 3rd foot of chip U3 are grounded；The chip U2 and chip
U3 is identical, model ZXGD3002E6.
5. high-frequency ultrasonic driver according to claim 4, which is characterized in that the push-pull drive module includes MOS
The grid connection institute of pipe Q1, metal-oxide-semiconductor Q2, capacitance C17, capacitance C19, capacitance C18, transformer T1 and crystal oscillator Y1, the metal-oxide-semiconductor Q1
The other end of resistance R3 is stated, the drain electrode of the metal-oxide-semiconductor Q1 is separately connected one end of the capacitance C17 and the input of transformer T1
1 foot, the source electrode of the metal-oxide-semiconductor Q1 are separately connected the source of the other end of the capacitance C17, one end of capacitance C19 and metal-oxide-semiconductor Q2
Pole, the grid of the metal-oxide-semiconductor Q2 connect the other end of the resistance R5, and the drain electrode of the metal-oxide-semiconductor Q2 is separately connected the capacitance
The other end of C19 and the 2nd foot of input of transformer T1, the 1st foot of output of the transformer T1 are separately connected the capacitance C18's
One end, one end of crystal oscillator Y1 and output, the 2nd foot of output of the transformer T1 are separately connected the other end, the crystalline substance of the capacitance C18
Shake Y1 the other end and output.
6. high-frequency ultrasonic driver according to claim 5, which is characterized in that the overcurrent protection module includes resistance
R18, resistance R19, resistance R13, resistance R16, capacitance C35, resistance R21, rheostat RP1, operational amplifier U10B, resistance R14,
Resistance R11, capacitance C39, zener diode D4, operational amplifier U10A, resistance R20, resistance R15, resistance R10, chip U4A and
One end of driver DRV, the resistance R13 is separately connected one end of the resistance R18, one end of resistance R19, capacitance C17
The other end of the source electrode of the other end, the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, the resistance R13 is separately connected the resistance R16's
The positive input of one end, one end of capacitance C35 and operational amplifier U10B, the operational amplifier U10B negative input connection described in
The sliding end of rheostat RP1, one end of the rheostat RP1 is through the resistance R21 connection power supplys VCC1, the operational amplifier
The output end of U10B connects one end of the resistance R14, and the other end of the resistance R14 is separately connected the one of the capacitance C39
The positive input of end and operational amplifier U10A, the negative input of the operational amplifier U10A are separately connected the moon of zener diode D4
The output end of pole and one end of resistance R11, the operational amplifier U10A is separately connected one end and the resistance of the resistance R20
One end of R15, the other end of the resistance R15 connect the 3rd foot of the chip U4A, and the 6th foot of the chip U4A connects respectively
The 1st foot of the NAND gate U8A and the input terminal of driver DRV are connect, the 2nd foot of the chip U4A is through the resistance R10 connections
The other end of power supply VCC1, the 8th feet of operational amplifier U10A and resistance R11 are all connected with power supply VCC1, the resistance R20's
The other end, the 4th foot of operational amplifier U10A, the anode of zener diode D4, the other end of capacitance C39, rheostat RP1 it is another
One end, the other end of resistance R16, the other end of capacitance C35, the other end of resistance R18 and resistance R19 the other end be grounded；
The chip U4A is using 74LS74 model chips；The U10A and U10B is identical, model AD8034AR.
7. high-frequency ultrasonic driver according to claim 6, which is characterized in that the switching frequency of described metal-oxide-semiconductor Q1, Q2
For 0.8MHz-15 MHz.
8. high-frequency ultrasonic driver according to claim 7, which is characterized in that the transmission of the grid electrode drive module is prolonged
It is less than 2ns late.
9. high-frequency ultrasonic driver according to claim 8, which is characterized in that the maximum drive of described metal-oxide-semiconductor Q1, Q2
Electric current is 9A.
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| US4973876A (en) * | 1989-09-20 | 1990-11-27 | Branson Ultrasonics Corporation | Ultrasonic power supply |
| CN202275295U (en) * | 2011-10-14 | 2012-06-13 | 深圳职业技术学院 | Ultrasonic welding power source system |
| CN103199712A (en) * | 2013-03-14 | 2013-07-10 | 然斯康波达机电设备(深圳)有限公司 | Ultrasonic cleaning power system |
| CN203376606U (en) * | 2013-05-02 | 2014-01-01 | 王培涛 | Apparatus formed by integrated chips and used for controlling lathe processing |
| CN103567134B (en) * | 2013-11-11 | 2016-01-13 | 河海大学常州校区 | The coalignment of ultrasonic-frequency power supply and matching process thereof |
| CN205725468U (en) * | 2016-04-22 | 2016-11-23 | 深圳市慧康精密仪器有限公司 | A kind of high-frequency ultrasonic driver |
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