CN208517578U - A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace - Google Patents
A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace Download PDFInfo
- Publication number
- CN208517578U CN208517578U CN201820957452.2U CN201820957452U CN208517578U CN 208517578 U CN208517578 U CN 208517578U CN 201820957452 U CN201820957452 U CN 201820957452U CN 208517578 U CN208517578 U CN 208517578U
- Authority
- CN
- China
- Prior art keywords
- butterfly valve
- opening
- single crystal
- crystal growing
- growing furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of single crystal growing furnace butterfly valve cleaning plants, including butterfly valve, are connected to two tube bodies at butterfly valve both ends, further include cross four-way pipe, are wherein equipped with dismountable blank flange in the two of the four-way pipe opening.In vacuumizing working condition, blank flange is fixed in the upper sealing state to keep entirety of opening, when blank flange can be opened to clear up butterfly valve in plant maintenance state, meanwhile, additionally provide a kind of single crystal growing furnace using the butterfly valve cleaning plant.
Description
Technical field
The utility model relates to monocrystal stove technical fields.
Background technique
Monocrystalline silicon is the crystal with basic complete lattice structure, is a kind of good semiconductor material, purity is reachable
To 99.9999999% or more, it can be used for diode grade, rectifying device grade, circuit-level and solar battery grade single crystal product article
Production and deep processing manufacture, subsequent product integrated circuit and semiconductor separation part are widely used to every field and are in
The forward position of new material development.
Semiconductor grade monocrystal stove is crystal growth equipment important in monocrystalline silicon industrial chain, currently, being used for silicon in the world
There are mainly two types of the main stream approach of single crystal growth: one is zone-melting process, another kind is vertical pulling method, and wherein vertical pulling method has growth
The advantages that monocrystalline quality is big, diameter is big, low in cost, high production efficiency is always the main means of bulk silicon substrate preparation.
In the single crystal growing furnace using vertical pulling method, the environmental requirement of the silicon crystal of growth is carried out under vacuum, and in environment
There cannot be impurity.In single crystal growing furnace in the prior art, usually connected in butterfly valve real-time control furnace in the vacuum pump that vacuumizes
Vacuum degree, but in vacuum, the volatile matter in crystal growth environment can be attached on butterfly valve plate with vacuumizing,
This volatile matter on butterfly valve, will affect the service life of butterfly valve for a long time.And the both ends of butterfly valve are due to being sealing structure, therefore i.e.
Just impurity or volatile matter are attached on valve plate, it is also difficult to clear up.
Utility model content
Purpose of utility model: a kind of single crystal growing furnace butterfly valve cleaning plant is provided, to the butterfly valve in easy cleaning single crystal growing furnace.
In addition the utility model provides a kind of single crystal growing furnace comprising the butterfly valve cleaning plant.
Technical solution: in order to achieve the above objectives, following technology can be used with butterfly valve cleaning plant in the utility model single crystal growing furnace
Scheme:
A kind of single crystal growing furnace butterfly valve cleaning plant including butterfly valve, is connected to two tube bodies at butterfly valve both ends, further includes cross
Shape four-way pipe, wherein the four-way pipe includes the first opening, the second opening, third opening, the 4th opening；First opening is opened with second
Mouth is opposite, and third opening is opposite with the 4th opening；First opening connects one of tube body, pacifies in the second opening and third opening
Equipped with blank flange.
The utility model has the advantages that by the second opening and third opening of four-way pipe in the butterfly valve cleaning plant of the utility model
Installation blank flange is with the default opening cleared up butterfly valve, and in vacuumizing working condition, blank flange is fixed in the second opening
With the upper sealing state to keep entirety of third opening, when in plant maintenance state, can open blank flange with to butterfly valve into
Row cleaning, wherein the second opening is respectively facing vertical both direction due to being open with third, therefore can be from both direction to butterfly
Valve is cleared up, and dead end of cleanning is avoided the occurrence of.
Further, it is respectively provided with center bearing bracket in second opening and third opening, the blank flange passes through clamp
Screw is connected on the center bearing bracket, and the first sealing ring is arranged between blank flange and center bearing bracket.
Further, pass through flanged joint, and the flanged joint between first opening and one of tube body
Between be arranged the second sealing ring formed sealing.
Further, the butterfly valve is flange butterfly, and butterfly valve both ends are again provided with center bearing bracket, and tube body passes through turret head
Bolt is mounted on the center bearing bracket at the butterfly valve both ends.
The utility model additionally provides a kind of technical solution of single crystal growing furnace, specifically:
A kind of single crystal growing furnace comprising above-mentioned butterfly valve cleaning plant, which further includes vacuum pumping pump, the vacuum pumping pump
Connect the 4th opening.
Beneficial effect, use in the single crystal growing furnace butterfly valve cleaning plant provided by the utility model can be convenient to butterfly valve into
Row cleaning is conducive to the service life for improving butterfly valve in single crystal growing furnace.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of single crystal growing furnace butterfly valve cleaning plant in the utility model.
Specific embodiment
Embodiment one
The present embodiment one provides a kind of embodiment of single crystal growing furnace butterfly valve cleaning plant.
Refering to Figure 1, the utility model discloses a kind of single crystal growing furnace butterfly valve cleaning plant, including butterfly valve 1, it is connected to
Two tube bodies at 1 both ends of butterfly valve, respectively the first tube body 2, the second tube body 3, in the present embodiment, first tube body 2 and
Two tube bodies 3 are reducer pipe, and one end of reducer pipe connection butterfly valve 1 is the small one end of bore.It further include cross four-way pipe 4,
Wherein the four-way pipe 4 includes first the 41, second opening 42 of opening, the 43, the 4th opening 44 of third opening；And first opening 41 and the
Two openings 42 are opposite, and third opening 43 is opposite with the 4th opening 44.The direction of i.e. first opening 41 is opened with third opening the 43, the 4th
The direction of mouth 44 is vertical, likewise, the direction of the 43, the 4th opening 44 of the direction of the second opening 42 and third opening is vertical.First
41 the first tube body 2 of connection of opening.Blind plate method is removably installed in second opening 42 of the four-way pipe 3 and third opening 43
It is blue.Specific mounting means is that center bearing bracket 61 is arranged in second opening 42, center bearing bracket is arranged in third opening 43
62, the blank flange 51 being mounted in the second opening 42 is connected on the center bearing bracket 61 by clamp screw 7, is mounted on
Blank flange 52 in third opening 43 is connected on the center bearing bracket 62 by clamp screw 7.Blank flange and center bearing bracket
Between be arranged the first sealing ring (not labeled) with when affixed formed sealing.By being installed in the second opening 42 and third opening 43
Blank flange 51,52 is with the default opening cleared up butterfly valve, and in vacuumizing working condition, blank flange 51,52 is fixed in the
Two openings 42 in third opening 43 to keep whole sealing state, when blank flange can be opened in plant maintenance state
51,52 to clear up butterfly valve 1, wherein the second opening 42 is due to 43 being respectively facing vertical both direction with third opening,
Therefore butterfly valve 1 can be cleared up from both direction, avoid the occurrence of dead end of cleanning.
By flanged joint, and between the flanged joint, setting second is close between first opening 41 and the first tube body 2
Seal formation sealing (not shown).
And in present embodiment, the butterfly valve 1 is flange butterfly, and 1 both ends of butterfly valve are again provided with center bearing bracket 11, the
One tube body 2, the second tube body 3 are mounted on the center bearing bracket 11 at the butterfly valve both ends by hexagon-headed bolt respectively.Second tube body 3 is also
An elbow 31 is connected, which extends and connect with the cavity seal for needing to vacuumize in single crystal growing furnace.
Embodiment two
Present embodiments provide a kind of single crystal growing furnace comprising the butterfly valve cleaning plant in embodiment one.
It further include the vacuum pumping pump to vacuumize, connect four-way pipe 4 the 4th of the vacuum pump seal in the single crystal growing furnace
Opening 44.
When single crystal growing furnace is when carrying out crystal pulling working condition, the second opening 42, third opening 43 pass through blank flange respectively
51,52 sealings make entire evacuation passageway form sealing.When blank flange 51,52 can be opened with right in plant maintenance state
Butterfly valve 1 is cleared up.
In addition, there are many concrete methods of realizing and approach of the utility model, the above is only the preferred of the utility model
Embodiment.It should be pointed out that for those skilled in the art, before not departing from the utility model principle
It puts, several improvements and modifications can also be made, these improvements and modifications also should be regarded as the protection scope of the utility model.This reality
The available prior art of each component part being not known in example is applied to be realized.
Claims (5)
1. a kind of single crystal growing furnace butterfly valve cleaning plant, including butterfly valve, it is connected to two tube bodies at butterfly valve both ends, it is characterised in that:
It further include cross four-way pipe, wherein the four-way pipe includes the first opening, the second opening, third opening, the 4th opening；First opens
Mouth is opposite with the second opening, and third opening is opposite with the 4th opening；First opening connects one of tube body, the second opening and the
Blank flange is installed in three openings.
2. single crystal growing furnace according to claim 1 butterfly valve cleaning plant, it is characterised in that: second opening is opened with third
It is respectively provided with center bearing bracket on mouthful, the blank flange is connected on the center bearing bracket by clamp screw, blank flange and center
First sealing ring is set between bracket.
3. single crystal growing furnace according to claim 1 or 2 butterfly valve cleaning plant, it is characterised in that: first opening and institute
It states by flanged joint between one of tube body, and the second sealing ring is set between the flanged joint and forms sealing.
4. single crystal growing furnace according to claim 1 or 2 butterfly valve cleaning plant, it is characterised in that: the butterfly valve is flange butterfly
Valve, butterfly valve both ends are again provided with center bearing bracket, and tube body is mounted on the center bearing bracket at the butterfly valve both ends by hexagon-headed bolt.
5. a kind of single crystal growing furnace comprising the butterfly valve cleaning plant as described in any one of claims 1 to 4, which further includes taking out
Vacuum pump, which is characterized in that the 4th opening of vacuum pumping pump connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820957452.2U CN208517578U (en) | 2018-06-20 | 2018-06-20 | A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820957452.2U CN208517578U (en) | 2018-06-20 | 2018-06-20 | A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208517578U true CN208517578U (en) | 2019-02-19 |
Family
ID=65325562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820957452.2U Active CN208517578U (en) | 2018-06-20 | 2018-06-20 | A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208517578U (en) |
-
2018
- 2018-06-20 CN CN201820957452.2U patent/CN208517578U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102312285B (en) | External continuous feeding mechanism for monocrystal furnace | |
| CN107400919A (en) | Ga is grown using stopped pipe chemical vapor transport mode2O3The method of monocrystalline | |
| CN208517578U (en) | A kind of single crystal growing furnace butterfly valve cleaning plant and single crystal growing furnace | |
| CN103014837A (en) | Secondary charging method for single crystal furnace | |
| CN206635455U (en) | Graphite crucible seat for semiconductor grade monocrystal stove | |
| CN213100887U (en) | High-efficient purification device of lithium bisfluorosulfonylimide short distance distillation | |
| CN212455893U (en) | Exhaust apparatus is used in compound fertilizer production | |
| CN102806762A (en) | Silicon wafer surface cleaning device of solar cell printer | |
| CN216337949U (en) | Water-cooling disc overturning tool structure for MOCVD system | |
| CN204874728U (en) | A dust particle collector that is used for MOCVD system chemistry source steam pipework | |
| CN104562187B (en) | A kind of vertical method without seed crystal chemical gas-phase method developing ZnO monocrystal | |
| CN2870156Y (en) | Sealed-connected exhausting device of plasma display screen | |
| CN206052205U (en) | Single crystal furnace window water cooling plant | |
| CN105506730A (en) | Main vacuum pipeline structure of single-crystal furnace | |
| CN219805106U (en) | Flue gas recovery device for high-temperature pickling | |
| CN203941882U (en) | Stopped pipe diffusion container | |
| CN205152393U (en) | Single crystal furnace | |
| CN202702858U (en) | Silicon slice surface cleaning device of solar cell printing machine | |
| CN207331106U (en) | A kind of high vacuum furnace body of single crystal growing furnace | |
| CN216274123U (en) | Microbial cultivation platform | |
| CN211005721U (en) | Dust removal device for exhaust pipe of single crystal furnace | |
| CN203269531U (en) | Simple equipment for bottling MO (metal organic) source | |
| CN202131304U (en) | Fermentation tank system provided with positive pressure protection device | |
| CN201695103U (en) | Equipment for growing dilead pentachloride kalium crystal under positive pressure environment | |
| CN214182836U (en) | Selenium-rich fertilizer slow release device for planting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |