CN208485951U - A kind of double-layer graphite disk that MOCVD is used - Google Patents
A kind of double-layer graphite disk that MOCVD is used Download PDFInfo
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- CN208485951U CN208485951U CN201821139936.2U CN201821139936U CN208485951U CN 208485951 U CN208485951 U CN 208485951U CN 201821139936 U CN201821139936 U CN 201821139936U CN 208485951 U CN208485951 U CN 208485951U
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Abstract
A kind of double-layer graphite disk that MOCVD is used, it is related to MOCVD epitaxy piece production technical field, in the top arranged concentric sub-disk of stamper, several circular holes for being used to place MOCVD epitaxy substrate through sub-disk are set in sub-disk, at least two cylindrical quartz columns that are vertical and protruding from stamper upper surface are connected at the edge of the upper surface of stamper, the groove of setting and the cooperation of cylindrical quartz column in the lower surface of sub-disk, sub-disk are realized that sub-disk is detachable by the cooperation of groove and cylindrical quartz column and are connected on stamper.Since there is the covering of sub-disk in stamper upper surface, it always is clean state, surface does not have Coating deposition, it can continue to stay in the reactor chamber, it reduces temperature and changes the destruction caused by stamper repeatedly, the service life that stamper can substantially be extended also avoids the every furnace of conventional graphite disk and replaces difference between introduced different graphite plates, promotes product yield.
Description
Technical field
The utility model belongs to technical field of semiconductors, and in particular to MOCVD epitaxy piece production technology, especially MOCVD
The structure of epitaxial growth equipment --- graphite plate designs.
Technical background
In recent years, LED chip is widely used in the various fields such as display screen, backlight, illumination and street lamp, with LED
Large-scale application, market puts forward higher requirements production efficiency, the production cost etc. of LED, and extension is needed persistently to reduce
LED manufacturing cost, graphite plate prolong the service life as the main consumptive material in MOCVD production process and have become inexorable trend.
However, the substantially each Run of graphite plate that MOCVD growth at present uses will clean stone by high-temperature baking outside furnace
The reaction residue on disc surface causes graphite plate service life necessarily to decline, and a Run more than 100 will replace what breakage was scrapped
Graphite plate, so that production cost is difficult to reduce.
Utility model content
To solve the problems, such as that graphite plate service life is short, the utility model proposes one kind can extend graphite plate service life
The double-layer graphite disk that uses of MOCVD.
The utility model includes stamper and sub-disk, and sub-disk is concentrically disposed in the top of stamper, and the diameter of stamper is no more than son
The diameter of disk, be arranged in sub-disk it is several through sub-disk for placing the circular holes of MOCVD epitaxy substrate, in the upper surface of stamper
Edge connects at least two cylindrical quartz columns that are vertical and protruding from stamper upper surface, setting and cylinder in the lower surface of sub-disk
The groove of shape quartz column cooperation, sub-disk realize that sub-disk is detachable by the cooperation of groove and cylindrical quartz column and are connected to stamper
On.
Original mono-layer graphite disk is changed to detachable two layers by the utility model, in use, sub-disk is passed through lower surface
Groove and the cylindrical quartz column for protruding from stamper upper surface cooperation, reach the fixed of the relative position of sub-disk and stamper and connect
It connects, then can use several circular holes for placing MOCVD epitaxy substrate being arranged in sub-disk and enter normal extension work journey
Sequence.At the end of MOCVD growth, sub-disk only need to being removed from stamper, is put into high-temperature baking furnace and cleans, stamper continues to stay in anti-
It answers in chamber, then is put into the sub-disk after cleaning on stamper, substrate (substrate) continued growth is put into circular hole.
It is clean state always since there is the covering of sub-disk in stamper upper surface, surface does not have Coating deposition, can
To continue to stay in the reactor chamber, such stamper avoids the operation taken out and entered back into high-temperature baking furnace repeatedly, and it is anti-to reduce temperature
Multiple variation is destroyed caused by stamper, can substantially extend the service life of stamper.Since stamper is reused, also avoid passing
The system every furnace of graphite plate replaces the difference between introduced different graphite plates, and MOCVD system temperature can be made more stable, promotes product
Yield.
In addition, substrate can be made to be eventually placed in stamper due to being through sub-disk for putting the circular hole of substrate in sub-disk
Upper surface, underlayer temperature always from stamper upper surface temperature heat transmitting, by replacement sub-disk and bring temperature to be influenced
Although (sub-disk specification is consistent, also has a little difference between different sub-disks) is preferably minimized, so as to serve as a contrast during production
The heated consistency at bottom is more preferable, and the stability and uniformity of product are stronger.
Further, in order to facilitate processing, it is easy to use, cylindrical quartz column described in the utility model is three, symmetrically
It is arranged on the same circumference of the upper surface of stamper.
In addition, three cylinder shape grooves, three cylinder shape grooves pair is arranged in the upper surface of stamper in the utility model
On the same circumference for claiming the upper surface for being arranged in stamper, is corresponded in each cylinder shape groove and plant a cylindrical quartz
Column, the upper end of cylindrical quartz column are higher than the upper surface of stamper.With this, cylindrical quartz column is supported by cylinder shape groove.Three
Root cylindrical quartz column primarily serves the purpose of connection stamper and sub-disk, and cladding of the quartz column by stamper and sub-disk, will not
It is influenced by reaction gas, will not deposit excessive reaction residue on quartz column surface, service life of quartz column and entire
The stability of system substantially enhances.
The design thickness of usual stamper is mostly 8~20mm, and therefore, the depth of cylinder shape groove described in the utility model is
5~15mm, diameter are 3mm~10mm.Three cylindrical quartz columns primarily serve the purpose of connection stamper and sub-disk, quartzy pillar height
Degree is less than the overall thickness of stamper and sub-disk, and quartz column is enable to be coated by stamper and sub-disk, quartzy column diameter be more greatly in order to
Active force suffered by sub-disk when stamper high speed rotation is born, can guarantee that sub-disk is preferably stablized with stamper.
It is made of upper layer and lower layer graphite plate, lower wall is known as stamper, and upper disk is known as sub-disk, and stamper upper surface is plane, edge
Three cylindrical quartz columns are set, for connecting sub-disk；Sub-disk is placed on stamper, and there are several open circles on sub-disk surface
Hole, Circularhole diameter are 2 ~ 6 inches, and sub-disk is fixed on stamper by three quartz columns of stamper top surface edge, and sub-disk is hollow
Circular hole is used to place the substrate (substrate) of MOCVD epitaxy growth.
Stamper 8~20mm of thickness, three, edge cylinder shape groove 3~10mm of diameter, 5~15mm of depth are spaced apart from each other
120°；Cylindrical quartz 3~the 10mm of column diameter being put into groove, 5~20mm of height；1~5mm of sub-disk thickness with stamper three
There are three cylindrical cavity, 3~10mm of hole diameter to be spaced apart from each other 120 °, match with quartz column for the corresponding position of quartz column.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the utility model.
Fig. 2 bows for stamper to schematic diagram.
Specific embodiment
As shown in Fig. 2, stamper 1 is 720 mm with a thickness of 8mm, diameter, three cylinders are set in the upper surface of stamper 1
Groove 1-1, three cylinder shape groove 1-1 are arranged symmetrically on the same circumference of the top surface edge of stamper 1, and each cylinder is recessed
The upper surface for being axially perpendicular to stamper 1 of slot 1-1, the depth of each cylinder shape groove 1-1 are 5 mm, and diameter is 5 mm.
As shown in Figure 1, sub-disk 2 is 720 mm with a thickness of 4mm, diameter, sub-disk 2 is concentrically disposed in the top of stamper 1, son
It is 6 inches, through the circular hole 2-1 for being used to place MOCVD epitaxy substrate of sub-disk that several diameters are arranged on disk 2.
Three groove 2-2 cylindrical are set relative to three cylinder shape groove 1-1 in the lower surface of sub-disk 2, it is each
The lower surface for being axially perpendicular to sub-disk 2 of groove 2-2, the depth of each groove 2-2 are 2 mm, and diameter is 5 mm.
Plant a cylindrical quartz respectively between the cylinder shape groove 1-1 of each stamper 1 and the groove 2-2 of sub-disk 2
Column 3, the length of every cylindrical quartz column 3 are 7mm, diameter 4.5mm.
Claims (4)
1. a kind of double-layer graphite disk that MOCVD is used, it is characterised in that: including stamper and sub-disk, sub-disk is concentrically disposed in stamper
Top, the diameter of stamper is not more than the diameter of sub-disk, be arranged in sub-disk it is several through sub-disk for placing MOCVD epitaxies lining
The circular hole at bottom connects at least two cylindrical quartzs that are vertical and protruding from stamper upper surface at the edge of the upper surface of stamper
Column, in the lower surface of sub-disk, the groove of setting and the cooperation of cylindrical quartz column, sub-disk are matched by groove and cylindrical quartz column
Conjunction is realized that sub-disk is detachable and is connected on stamper.
2. the double-layer graphite disk that MOCVD is used according to claim 1, it is characterised in that: the cylindrical quartz column is three
Root is arranged symmetrically on the same circumference of the upper surface of stamper.
3. the double-layer graphite disk that MOCVD is used according to claim 2, it is characterised in that: be arranged three in the upper surface of stamper
A cylinder shape groove, on the same circumference for the upper surface that three cylinder shape grooves are arranged symmetrically in stamper, in each cylinder
It is corresponded in connected in star and plants a cylindrical quartz column, the upper end of cylindrical quartz column is higher than the upper surface of stamper.
4. the double-layer graphite disk that MOCVD is used according to claim 3, it is characterised in that: the depth of the cylinder shape groove
For 5~15mm, diameter is 3mm~10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821139936.2U CN208485951U (en) | 2018-07-18 | 2018-07-18 | A kind of double-layer graphite disk that MOCVD is used |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821139936.2U CN208485951U (en) | 2018-07-18 | 2018-07-18 | A kind of double-layer graphite disk that MOCVD is used |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208485951U true CN208485951U (en) | 2019-02-12 |
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ID=65247656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821139936.2U Active CN208485951U (en) | 2018-07-18 | 2018-07-18 | A kind of double-layer graphite disk that MOCVD is used |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208485951U (en) |
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2018
- 2018-07-18 CN CN201821139936.2U patent/CN208485951U/en active Active
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