CN204162829U - A kind of growth Tabular gem-grade diamond double-layer cavity device - Google Patents
A kind of growth Tabular gem-grade diamond double-layer cavity device Download PDFInfo
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- CN204162829U CN204162829U CN201420619939.1U CN201420619939U CN204162829U CN 204162829 U CN204162829 U CN 204162829U CN 201420619939 U CN201420619939 U CN 201420619939U CN 204162829 U CN204162829 U CN 204162829U
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- zirconium dioxide
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- pyrophyllite
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Abstract
A kind of growth Tabular gem-grade diamond double-layer cavity device, belongs to and manufactures Tabular gem-grade diamond equipment technology field.There is bilayer growth space in this device, gem grade diamond large single crystal synthesis cost can be reduced.Pyrophyllite blocks up ring one and two and is placed in upper and lower ends in pyrophyllite in lumps through hole, and conductive plug one and two embeds pyrophyllite and blocks up in ring one and two, and copper sheet two and is arranged on conductive plug one and two upper and lower ends; Complete steady zirconium dioxide blocks up ring and is arranged on copper sheet one lower end, sodium-chlor sleeve pipe is positioned at complete steady zirconium dioxide and blocks up ring lower end, carbon tube is set in sodium-chlor sleeve pipe, graphite flake one and two is located at complete steady zirconium dioxide respectively and blocks up ring and carbon tube lower end, graphite flake two is placed the brilliant bed of complete steady zirconium dioxide, complete steady zirconium dioxide insulative pipe sleeve is located in carbon tube, places catalytic alloy two, graphite carbon source two, aluminum oxide brilliant bed, catalytic alloy one, graphite carbon source one and aluminum oxide compressing tablet in complete steady zirconium dioxide insulation tube.The utility model is for growing Tabular gem-grade diamond.
Description
Technical field
The utility model relates to a kind of growth Tabular gem-grade diamond device, belongs to and manufactures Tabular gem-grade diamond equipment technology field.
Background technology
Under High Temperature High Pressure, use temperature gradient method synthetic gem grade diamond large single crystal is the main source of current industrial diamond single-chip, make largest benefit in this way be can place multiple diamond seeds an inside cavity simultaneously, be used for effectively controlling the epitaxy of monocrystalline.Along with the maximization of cubic hydraulic press, synthesis assembly block is also increasing, and the therefore growth pattern of individual layer, cannot make full use of inside cavity space.So-called monolayer growth mode refers to that make assembly block device in this way, cavity space utilization ratio is low, per unit area yield ability, to such an extent as to product cost is high in synthetic cavity inner only placement one deck catalyst and carbon source.
Summary of the invention
The purpose of this utility model is to provide a kind of growth Tabular gem-grade diamond double-layer cavity device, has double-deck growing space, can reduce the synthesis cost of gem grade diamond large single crystal in this device.
The utility model technical scheme taked that solves the problem is:
A kind of growth Tabular gem-grade diamond double-layer cavity device, it comprises pyrophyllite in lumps, pyrophyllite blocks up ring one, conductive plug one, copper sheet one, graphite column, complete steady zirconium dioxide block up ring, graphite flake one, aluminum oxide compressing tablet, graphite carbon source one, catalytic alloy one, the brilliant bed of aluminum oxide, graphite carbon source two, catalytic alloy two, the brilliant bed of complete steady zirconium dioxide, graphite flake two, copper sheet two, conductive plug, agalmatolite block up ring two, sodium-chlor sleeve pipe, carbon tube and complete steady zirconium dioxide insulation tube; Be provided with the through hole running through pyrophyllite in lumps upper and lower surface in the middle part of described pyrophyllite in lumps, described pyrophyllite blocks up ring one and is placed in upper end in pyrophyllite in lumps through hole, and described pyrophyllite blocks up ring two and is placed in lower end in pyrophyllite in lumps through hole; Described conductive plug one embeds pyrophyllite and blocks up in ring one ring cavity, and described conductive plug two embeds pyrophyllite and blocks up in ring two ring cavity; Described copper sheet one is arranged on conductive plug one lower end, and copper sheet one upper surface contacts with conductive plug a lower surface, and described copper sheet two is arranged on conductive plug two upper end, and copper sheet two lower surface contacts with conductive plug two upper surface; Described complete steady zirconium dioxide blocks up ring and is arranged on copper sheet one lower end, and described graphite column embeds complete steady zirconium dioxide and blocks up in ring ring cavity, and graphite column and complete steady zirconium dioxide block up ring upper surface and contact with copper sheet a lower surface; Described sodium-chlor casing pipe sleeve is located in the through hole of pyrophyllite in lumps, and is positioned at complete steady zirconium dioxide and blocks up ring lower end, and described carbon tube is set in sodium-chlor sleeve pipe; Described graphite flake one is arranged on complete steady zirconium dioxide and blocks up ring lower end, and graphite flake one upper surface and graphite column and entirely surely zirconium dioxide block up ring lower surface and contact, graphite flake a lower surface contacts with carbon tube upper surface; Described graphite flake two is arranged on the lower end of carbon tube, and graphite flake two upper surface contacts with carbon tube lower surface, and graphite flake two lower surface contacts with copper sheet two upper surface; The upper surface of graphite flake two places the brilliant bed of complete steady zirconium dioxide, described complete steady zirconium dioxide insulative pipe sleeve is located in carbon tube, and complete steady zirconium dioxide insulation tube lower surface contacts with the brilliant bed upper surface of complete steady zirconium dioxide, complete steady zirconium dioxide insulation tube upper surface contacts with graphite flake a lower surface; By placing catalytic alloy two, graphite carbon source two, aluminum oxide brilliant bed, catalytic alloy one, graphite carbon source one and aluminum oxide compressing tablet between the brilliant bed to graphite flake one of full stabilized zirconia successively in complete steady zirconium dioxide insulation tube; The brilliant bed upper surface of described aluminum oxide is provided with multiple cavity one vertically, and the brilliant bed upper surface of full stabilized zirconia is provided with multiple cavity two vertically, and described multiple cavitys one and multiple cavity two are for bed setter's industry diamond single crystal; The profile of described pyrophyllite in lumps is four-prism shape.
The utility model relative to the beneficial effect of prior art is: growth Tabular gem-grade diamond double-layer cavity device of the present utility model is owing to have employed bilayer structure, the diamond single crystal productive rate of synthesis is high, crystal formation rule, quality better, per unit area yield 50% can be improved, thus the production cost of Gem Grade large single crystal is significantly reduced.
Accompanying drawing explanation
Fig. 1 is the front sectional view of growth Tabular gem-grade diamond double-layer cavity device of the present utility model.
The component names related in above-mentioned figure and label are respectively:
Pyrophyllite in lumps 1, pyrophyllite blocks up ring 1, conductive plug 1, copper sheet 1, graphite column 5, complete steady zirconium dioxide blocks up ring 6, graphite flake 1, aluminum oxide compressing tablet 8, graphite carbon source 1, catalytic alloy 1, the brilliant bed 11 of aluminum oxide, cavity one 11-1, graphite carbon source 2 12, catalytic alloy 2 13, the brilliant bed 14 of complete steady zirconium dioxide, cavity two 14-1, graphite flake 2 15, copper sheet 2 16, conductive plug 17, agalmatolite blocks up ring 2 18, sodium-chlor sleeve pipe 19, carbon tube 20, complete steady zirconium dioxide insulation tube 21.
Embodiment
As shown in Figure 1, a kind of growth Tabular gem-grade diamond double-layer cavity device, it comprises pyrophyllite in lumps 1, pyrophyllite blocks up ring 1, conductive plug 1, copper sheet 1, graphite column 5, complete steady zirconium dioxide block up ring 6, graphite flake 1, aluminum oxide compressing tablet 8, graphite carbon source 1, catalytic alloy 1, the brilliant bed 11 of aluminum oxide, graphite carbon source 2 12, catalytic alloy 2 13, the brilliant bed 14 of complete steady zirconium dioxide, graphite flake 2 15, copper sheet 2 16, conductive plug 17, agalmatolite block up ring 2 18, sodium-chlor sleeve pipe 19, carbon tube 20 and complete steady zirconium dioxide insulation tube 21; Be provided with the through hole running through pyrophyllite in lumps 1 upper and lower surface in the middle part of described pyrophyllite in lumps 1, described pyrophyllite blocks up ring 1 and is placed in upper end in pyrophyllite in lumps 1 through hole, and described pyrophyllite blocks up ring 2 18 and is placed in lower end in pyrophyllite in lumps 1 through hole; Described conductive plug 1 embeds pyrophyllite and blocks up in ring 1 ring cavity, and described conductive plug 2 17 embeds pyrophyllite and blocks up in ring 2 18 ring cavity; Described copper sheet 1 is arranged on conductive plug 1 lower end, and copper sheet 1 upper surface contacts with conductive plug 1 lower surface, and described copper sheet 2 16 is arranged on conductive plug 2 17 upper end, and copper sheet 2 16 lower surface contacts with conductive plug 2 17 upper surface; Described complete steady zirconium dioxide blocks up ring 6 and is arranged on copper sheet 1 lower end, and described graphite column 5 embeds complete steady zirconium dioxide and blocks up in ring 6 ring cavity, and graphite column 5 and complete steady zirconium dioxide block up ring 6 upper surface and contact with copper sheet 1 lower surface; Described sodium-chlor sleeve pipe 19 is set in the through hole of pyrophyllite in lumps 1, and is positioned at complete steady zirconium dioxide and blocks up ring 6 lower end, and described carbon tube 20 is set in sodium-chlor sleeve pipe 19; Described graphite flake 1 is arranged on complete steady zirconium dioxide and blocks up ring 6 lower end, and graphite flake 1 upper surface and graphite column 5 and entirely surely zirconium dioxide block up ring 6 lower surface and contact, graphite flake 1 lower surface contacts with carbon tube 20 upper surface; Described graphite flake 2 15 is arranged on the lower end of carbon tube 20, and graphite flake 2 15 upper surface contacts with carbon tube 20 lower surface, and graphite flake 2 15 lower surface contacts with copper sheet 2 16 upper surface; The upper surface of graphite flake 2 15 places the brilliant bed 14 of complete steady zirconium dioxide, described complete steady zirconium dioxide insulation tube 21 is set in carbon tube 20, and complete steady zirconium dioxide insulation tube 21 lower surface contacts with brilliant bed 14 upper surface of complete steady zirconium dioxide, complete steady zirconium dioxide insulation tube 21 upper surface contacts with graphite flake 1 lower surface; By placing catalytic alloy 2 13, graphite carbon source 2 12, aluminum oxide brilliant bed 11, catalytic alloy 1, graphite carbon source 1 and aluminum oxide compressing tablet 8 between brilliant bed 14 to the graphite flake 1 of full stabilized zirconia successively in complete steady zirconium dioxide insulation tube 21; Brilliant bed 11 upper surface of described aluminum oxide is provided with multiple cavity one 11-1 vertically, brilliant bed 14 upper surface of full stabilized zirconia is provided with multiple cavity two 14-1 vertically, and described multiple cavitys one 11-1 and multiple cavity two 14-1 is used for inlaying industrial diamond single crystal; The profile of described pyrophyllite in lumps 1 is four-prism shape.
Described catalytic alloy 1 and catalytic alloy 2 13 are iron-nickel alloy, and in iron-nickel alloy, the weight ratio of iron and nickel is 64:36.
Preferably, the distribution mode being arranged on multiple cavitys one 11-1 of brilliant bed 11 upper surface of described aluminum oxide is: brilliant bed 11 upper surface middle part of aluminum oxide arranges cavity one 11-1, remaining multiple cavitys one 11-1 is arranged on the difference of brilliant bed 11 upper surface of aluminum oxide circumferentially, and is positioned at the same uniform setting of multiple cavitys one 11-1 circumferentially of brilliant bed 11 upper surface of aluminum oxide; The distribution mode being arranged on multiple cavitys two 14-1 of brilliant bed 14 upper surface of described full stabilized zirconia is: brilliant bed 14 upper surface middle part of full stabilized zirconia arranges cavity two 14-1, remaining multiple cavitys two 14-1 is arranged on the difference of brilliant bed 14 upper surface of full stabilized zirconia circumferentially, and is positioned at the same uniform setting of multiple cavitys two 14-2 circumferentially of brilliant bed 14 upper surface of full stabilized zirconia.Described cavity one 11-1 and cavity two 14-1 is circular-shaped, concave cavity, and described circular-shaped, concave cavity diameter is 0.7mm.
principle of work:first respectively in brilliant bed 11 upper surface of aluminum oxide multiple cavity one 11-1 and inlay industrial diamond single crystal (described industrial diamond monocrystalline is the cubic diamond monocrystalline of 0.5mm × 0.5mm × 0.5mm) in multiple cavitys two 14-1 of brilliant bed 14 upper surface of zirconium dioxide and be used for inducing diamond crystalline, thus diamond orientation epitaxy is controlled.The upper surface embedding the cubic diamond monocrystalline in multiple cavitys one 11-1 of the brilliant bed 11 of aluminum oxide is concordant with brilliant bed 11 upper surface of aluminum oxide, and the upper surface embedding the cubic diamond monocrystalline in multiple cavitys two 14-1 of the brilliant bed 14 of zirconium dioxide is concordant with brilliant bed 14 upper surface of zirconium dioxide; Secondly, by the growth Tabular gem-grade diamond double-layer cavity device after having assembled, be placed on six top anvil center positions of domestic cubic hydraulic press, the upper and lower two ends of this device are heated, pressurize to six faces of this device (i.e. two end faces up and down of device and pyrophyllite in lumps 1 four outer sides), make Heating temperature reach 1300 DEG C, moulding pressure reaches 5.5GPa simultaneously, and keep the time of 24h ~ 48h, the bilayer growth of Tabular gem-grade diamond can be realized.
Claims (3)
1. a growth Tabular gem-grade diamond double-layer cavity device, it comprises pyrophyllite in lumps (1), pyrophyllite blocks up ring one (2), conductive plug one (3), copper sheet one (4), graphite column (5), complete steady zirconium dioxide blocks up ring (6), graphite flake one (7), aluminum oxide compressing tablet (8), graphite carbon source one (9), catalytic alloy one (10), the brilliant bed (11) of aluminum oxide, graphite carbon source two (12), catalytic alloy two (13), the brilliant bed (14) of complete steady zirconium dioxide, graphite flake two (15), copper sheet two (16), conductive plug two (17), agalmatolite blocks up ring two (18), sodium-chlor sleeve pipe (19), carbon tube (20) and complete steady zirconium dioxide insulation tube (21), it is characterized in that: described pyrophyllite in lumps (1) middle part is provided with the through hole running through pyrophyllite in lumps (1) upper and lower surface, described pyrophyllite blocks up ring one (2) and is placed in upper end in pyrophyllite in lumps (1) through hole, and described pyrophyllite blocks up ring two (18) and is placed in lower end in pyrophyllite in lumps (1) through hole, described conductive plug one (3) embeds pyrophyllite and blocks up in ring one (2) ring cavity, and described conductive plug two (17) embeds pyrophyllite and blocks up in ring two (18) ring cavity, described copper sheet one (4) is arranged on conductive plug one (3) lower end, and copper sheet one (4) upper surface contacts with conductive plug one (3) lower surface, described copper sheet two (16) is arranged on conductive plug two (17) upper end, and copper sheet two (16) lower surface contacts with conductive plug two (17) upper surface, described complete steady zirconium dioxide blocks up ring (6) and is arranged on copper sheet one (4) lower end, described graphite column (5) embeds complete steady zirconium dioxide and blocks up in ring (6) ring cavity, and graphite column (5) and complete steady zirconium dioxide block up ring (6) upper surface and contact with copper sheet one (4) lower surface, described sodium-chlor sleeve pipe (19) is set in the through hole of pyrophyllite in lumps (1), and is positioned at complete steady zirconium dioxide and blocks up ring (6) lower end, and described carbon tube (20) is set in sodium-chlor sleeve pipe (19), described graphite flake one (7) is arranged on complete steady zirconium dioxide and blocks up ring (6) lower end, and graphite flake one (7) upper surface and graphite column (5) and complete steady zirconium dioxide block up ring (6) lower surface contacts, graphite flake one (7) lower surface contacts with carbon tube (20) upper surface, described graphite flake two (15) is arranged on the lower end of carbon tube (20), and graphite flake two (15) upper surface contacts with carbon tube (20) lower surface, and graphite flake two (15) lower surface contacts with copper sheet two (16) upper surface, the upper surface of graphite flake two (15) places the brilliant bed (14) of complete steady zirconium dioxide, described complete steady zirconium dioxide insulation tube (21) is set in carbon tube (20), and complete steady zirconium dioxide insulation tube (21) lower surface contacts with brilliant bed (14) upper surface of complete steady zirconium dioxide, complete steady zirconium dioxide insulation tube (21) upper surface contacts with graphite flake one (7) lower surface, by placing catalytic alloy two (13), graphite carbon source two (12), the brilliant bed (11) of aluminum oxide, catalytic alloy one (10), graphite carbon source one (9) and aluminum oxide compressing tablet (8) between the brilliant bed (14) to graphite flake one (7) of full stabilized zirconia successively in complete steady zirconium dioxide insulation tube (21), brilliant bed (11) upper surface of described aluminum oxide is provided with multiple cavity one (11-1) vertically, brilliant bed (14) upper surface of full stabilized zirconia is provided with multiple cavity two (14-1) vertically, and described multiple cavitys one (11-1) and multiple cavity two (14-1) are for inlaying industrial diamond single crystal, the profile of described pyrophyllite in lumps (1) is four-prism shape.
2. growth Tabular gem-grade diamond double-layer cavity device according to claim 1, it is characterized in that: the distribution mode being arranged on multiple cavitys one (11-1) of brilliant bed (11) upper surface of described aluminum oxide is: brilliant bed (11) upper surface middle part of aluminum oxide arranges a cavity one (11-1), remaining multiple cavitys one (11-1) are arranged on the difference of brilliant bed (11) upper surface of aluminum oxide circumferentially, and are positioned at same multiple cavitys one (11-1) the uniform setting circumferentially of brilliant bed (11) upper surface of aluminum oxide; The distribution mode being arranged on multiple cavitys two (14-1) of described brilliant bed (14) upper surface of complete steady zirconium dioxide is: brilliant bed (14) upper surface middle part of full stabilized zirconia arranges a cavity two (14-1), remaining multiple cavitys two (14-1) are arranged on the difference of brilliant bed (14) upper surface of full stabilized zirconia circumferentially, and are positioned at same multiple cavitys two (14-2) the uniform setting circumferentially of brilliant bed (14) upper surface of full stabilized zirconia.
3. growth Tabular gem-grade diamond double-layer cavity device according to claim 1 and 2, is characterized in that: described cavity one (11-1) and cavity two (14-1) are circular-shaped, concave cavity, and described circular-shaped, concave cavity diameter is 0.7mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420619939.1U CN204162829U (en) | 2014-10-24 | 2014-10-24 | A kind of growth Tabular gem-grade diamond double-layer cavity device |
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| CN201420619939.1U CN204162829U (en) | 2014-10-24 | 2014-10-24 | A kind of growth Tabular gem-grade diamond double-layer cavity device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106215808A (en) * | 2016-08-18 | 2016-12-14 | 中南钻石有限公司 | The Synthetic block of a kind of synthetic jewelry colorless diamond and synthetic method thereof |
| CN107824128A (en) * | 2017-10-31 | 2018-03-23 | 江苏西玉钻石科技有限公司 | A kind of double carbon source synthesis of artificial diamond preparation facilities and preparation method |
| CN115041100A (en) * | 2022-07-22 | 2022-09-13 | 中南钻石有限公司 | Diamond synthetic block cultivated by multilayer permeation type structure large-particle single crystal and preparation process thereof |
| CN115159964A (en) * | 2022-07-20 | 2022-10-11 | 中晶钻石有限公司 | Crystal bed material for synthesizing 3-5 carat cultured diamond at high temperature and high pressure and method for manufacturing crystal bed |
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2014
- 2014-10-24 CN CN201420619939.1U patent/CN204162829U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106215808A (en) * | 2016-08-18 | 2016-12-14 | 中南钻石有限公司 | The Synthetic block of a kind of synthetic jewelry colorless diamond and synthetic method thereof |
| CN107824128A (en) * | 2017-10-31 | 2018-03-23 | 江苏西玉钻石科技有限公司 | A kind of double carbon source synthesis of artificial diamond preparation facilities and preparation method |
| CN107824128B (en) * | 2017-10-31 | 2024-04-16 | 王国伟 | Preparation device and preparation method for double-carbon-source synthetic artificial diamond |
| CN115159964A (en) * | 2022-07-20 | 2022-10-11 | 中晶钻石有限公司 | Crystal bed material for synthesizing 3-5 carat cultured diamond at high temperature and high pressure and method for manufacturing crystal bed |
| CN115041100A (en) * | 2022-07-22 | 2022-09-13 | 中南钻石有限公司 | Diamond synthetic block cultivated by multilayer permeation type structure large-particle single crystal and preparation process thereof |
| CN115041100B (en) * | 2022-07-22 | 2023-09-15 | 中南钻石有限公司 | Multilayer infiltration type structure large particle single crystal cultivation diamond synthetic block and preparation process thereof |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150218 Termination date: 20151024 |
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| EXPY | Termination of patent right or utility model |