CN203049093U - Novel combined heat shield system of sapphire crystal growth furnace - Google Patents
Novel combined heat shield system of sapphire crystal growth furnace Download PDFInfo
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- CN203049093U CN203049093U CN 201220663576 CN201220663576U CN203049093U CN 203049093 U CN203049093 U CN 203049093U CN 201220663576 CN201220663576 CN 201220663576 CN 201220663576 U CN201220663576 U CN 201220663576U CN 203049093 U CN203049093 U CN 203049093U
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- thermoscreen
- molybdenum
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- crystal growth
- heat shield
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Abstract
The utility model discloses a novel combined heat shield system of a sapphire crystal growth furnace. The novel combined heat shield system comprises a side heat shield, a top heat shield and a bottom heat shield, wherein the side heat shield screen is composed of 10-20 layers of plates and suspended on a furnace shell through a suspension part; the top heat shield is composed of 10-15 layers of plates and directly placed on the side heat shield; and the bottom heat shield is composed of 10-15 layers of plates and placed on a lower furnace cover through a support. The combined heat shield system provided by the utility model is of a split detachable structure so that the material cost of the sapphire crystal growth system is greatly reduced.
Description
Technical field
The present invention relates to the essential parts of sapphire crystal growth furnace in the processing and making process of LED Sapphire Substrate sheet, especially a kind of heat-insulation and heat-preservation system.
Background technology
The LED industry has had the development course of decades abroad, at the early-stage since 2010 at home, and the Sapphire Substrate sheet through decades production practice prove, be the most economic up to now a kind of substrate material, play a part crucial for reducing the LED manufacturing cost.And sapphire crystal growth equipment is necessary carrier.The present domestic sapphire crystal growth equipment of having introduced in a large number, processing method comprises the KY method, the HEM method, the EFG method, TGT method etc., KY explained hereafter efficient height wherein, technology maturation, but the growth of large size high quality crystal ingot, production cost is low, but under the economic situation of sternness, the processing and manufacturing of LED is harsher for the cost requirement of substrate slice, and the tooling cost of Sapphire Substrate sheet is mainly from long brilliant link, and in long brilliant process, the consumables cost of crystal growing furnace is directly determining the tooling cost of Sapphire Substrate sheet.In the early stage, domestic crystal growth producer is the external thermoscreen of buying and heating element mostly, though these producers all domesticize these consumptive materials, cost decreases drastically, and does not fundamentally reduce the cost of consumptive material.Three groups of thermoscreens of the thermal field structure of present domestic employing mostly are integral structure, and after reaching the date of retirement, a whole set of thermal field needs all to change.Consumables cost is high.
Summary of the invention
Technical problem to be solved by this invention provides a kind of novel sapphire crystal growth stove combined type thermoscreen system, is used for improving the consumables cost that the sapphire crystal growth system carries out crystal growth.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of novel sapphire crystal growth stove combined type thermoscreen system, comprise the side thermoscreen, top thermoscreen and bottom thermoscreen is characterized in that, described side thermoscreen is made up of 10-20 laminate material, hang on the furnace shell by suspender, described top thermoscreen is made up of 10-15 laminate material, directly is positioned on the side thermoscreen, described bottom thermoscreen is made up of 10-15 laminate material, is positioned over down on the bell by support.
Above-mentioned a kind of novel sapphire crystal growth stove combined type thermoscreen system, it is characterized in that, described side thermoscreen is divided into two portions, and internal layer is tungsten near heating element part 1-8 layer material, and the remainder layer material is molybdenum, described top thermoscreen is divided into two portions, lowest layer 1-3 layer material is tungsten, and the remainder layer material is molybdenum, and described bottom thermoscreen is divided into two portions, topmost 1-3 layer material is tungsten, and the remainder layer material is molybdenum.The side thermoscreen is to the date of retirement, the two groups of heating elements of dismantling, and the 1-8 layer tungsten screen of changing first group get final product, and top thermoscreen and bottom thermoscreen are directly changed tungsten and are shielded and get final product after reaching the date of retirement.
Above-mentioned a kind of novel sapphire crystal growth stove combined type thermoscreen system, it is characterized in that, described side thermoscreen hangs on the furnace shell by the male and female suspender, the suspender material is molybdenum, 6 of suspender through holes are arranged on it, 6 of heating element slot electrodes, each layer of side thermoscreen centre keeps each interlamellar spacing by the wave plate, and described top each layer of thermoscreen connects into as a whole by molybdenum rod, be through on the molybdenum rod with small-sized molybdenum piece, place between each layer, the spacing that keeps each laminate material, described bottom each layer of thermoscreen connects to form an integral body by molybdenum rod, is through on the molybdenum rod with small-sized molybdenum piece, place between each layer, keep the spacing of each laminate material.
Above-mentioned a kind of novel sapphire crystal growth stove combined type thermoscreen system is characterized in that described top thermoscreen has the seed crystal through hole in the centre, so that seed rod and seed crystal can therefrom pass through.
Above-mentioned a kind of novel sapphire crystal growth stove combined type thermoscreen system is characterized in that described side thermoscreen, the employed tungsten plate of top thermoscreen and bottom thermoscreen and molybdenum plate, purity is 99.95%, and thickness is 0.5mm to 5mm, and distance between plates is 0.5mm to 5mm.
The invention has the advantages that: combined type thermoscreen system adopts split type demountable structure, has greatly reduced the consumables cost of sapphire growth system.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is sapphire crystal growth entire system synoptic diagram.
Fig. 2 is side thermoscreen vertical view synoptic diagram.
Fig. 3 is side thermoscreen side-view synoptic diagram.
Fig. 4 is side thermoscreen suspender synoptic diagram.
Fig. 5 is top thermoscreen front view synoptic diagram.
Fig. 6 is top thermoscreen vertical view synoptic diagram.
Fig. 7 is bottom thermoscreen front view synoptic diagram.
Fig. 8 is bottom thermoscreen vertical view synoptic diagram.
Embodiment
Fig. 1 and shown in Figure 7, the sapphire crystal growth system comprises side thermoscreen 1, top thermoscreen 2, bottom thermoscreen 3, side heating element 4, following heating element 5, tungsten crucible 6, electrode stake 7, side thermoscreen suspender 8, last bell 9, following bell 10, crucible holder 11, furnace shell 12, last thermoscreen seed crystal through hole 13, crystal 14 and melt 15, tungsten crucible 6 is positioned over the inside of side heating element 4, by crucible holder 11, be supported in down on the bell 10, be the container of splendid attire alumina raw material.Sapphire crystal growth stove combined type thermoscreen system comprises side thermoscreen 1, top thermoscreen 2 and bottom thermoscreen 3, side thermoscreen 1 is made up of 20 laminate materials, hang on the furnace shell 12 by suspender, top thermoscreen 2 is made up of 15 laminate materials, directly be positioned on the side thermoscreen 1, bottom thermoscreen 3 is made up of 15 laminate materials, be positioned over down on the bell 10 by following thermoscreen support 19, following heating element 5 is supported in down in the furnace shell electrode stake 34 by electrode pawl 16, and this crystal growing furnace adopts the mode of charging down, passes through hoisting appliance when beginning, to descend bell 10, bottom thermoscreen 3 and tungsten crucible 6 are sent in the main chamber together.
Fig. 2, Fig. 3 and shown in Figure 4, side thermoscreen 1 is divided into two groups, and first group is bent to by 8 layers of tungsten plate near the part of heating element 4 and cylindricly to constitute, and second group of cylinder by 12 layers of molybdenum plate bending formed, side thermoscreen 1 hangs on the furnace shell 12 by the male and female suspender, the suspender material is molybdenum, and the suspender through hole 29 on it has 6, and heating element slot electrode 30 has 6, side thermoscreen 1 each layer centre keeps each interlamellar spacing by wave plate 26, and side thermoscreen 1 places the outside of side heating element 4.At side thermoscreen 1 suspender perforate 29 and electrode pawl perforate 30 are arranged, the electrode pawl of side heating element 4 hangs in the furnace shell 12 electrode stakes 7 by electrode pawl through hole 30.Suspender is made up of 3 parts, first part is furnace wall web member 33, be stainless steel 314 materials, on welding and the furnace shell 12, side thermoscreen suspender is made of public groove 31 and female groove 32, and material is molybdenum, connect by screw between public groove 31 and the furnace wall web member 33, public groove 31 is used for suspending side thermoscreen 1 molybdenum shield 28, and female groove 32 hangs on the public groove 31, is used for suspending side thermoscreen 1 tungsten screen 27.
Fig. 5 and shown in Figure 6, top thermoscreen 2 are divided into two groups, are made up of the 3 layers of tungsten plate 27 in bottom for first group, are made up of 12 layers of molybdenum plate 28 for second group, all have 22, two groups of thermoscreens of molybdenum rod connecting hole on two groups of thermoscreens by connecting molybdenum rod 17, form a whole.Have seed crystal through hole 24 at last bell 9 and last thermoscreen 2, seed crystal passes through during with the assurance crystal growth.
Fig. 7 and shown in Figure 8, bottom thermoscreen 3 is divided into two groups, first group 27 is that 3 layers of tungsten plate are formed, formed by 12 layers of molybdenum plate for second group 28, have molybdenum rod connecting hole 22 and electrode pawl perforate 21 at tungsten plate and molybdenum plate, two groups of thermoscreens are linked to be an integral body by connecting molybdenum rod 17, and each layer thermoscreen keeps spacing by little molybdenum piece 18.
Side thermoscreen 1, top thermoscreen 2 and bottom thermoscreen 3 are only removed tungsten screen 27 to after the date of retirement, change then to get final product.
Claims (5)
1. novel sapphire crystal growth stove combined type thermoscreen system, comprise the side thermoscreen, top thermoscreen and bottom thermoscreen, it is characterized in that described side thermoscreen is made up of 10-20 laminate material, hangs on the furnace shell by suspender, described top thermoscreen is made up of 10-15 laminate material, directly be positioned on the side thermoscreen, described bottom thermoscreen is made up of 10-15 laminate material, is positioned over down on the bell by support.
2. a kind of novel sapphire crystal growth stove combined type thermoscreen according to claim 1 system, it is characterized in that, described side thermoscreen is divided into two portions, and internal layer is tungsten near heating element part 1-8 layer material, and the remainder layer material is molybdenum, described top thermoscreen is divided into two portions, lowest layer 1-3 layer material is tungsten, and the remainder layer material is molybdenum, and described bottom thermoscreen is divided into two portions, topmost 1-3 layer material is tungsten, and the remainder layer material is molybdenum.
3. a kind of novel sapphire crystal growth stove combined type thermoscreen according to claim 1 system, it is characterized in that, described side thermoscreen hangs on the furnace shell by the male and female suspender, the suspender material is molybdenum, 6 of suspender through holes are arranged on it, 6 of heating element slot electrodes, each layer of side thermoscreen centre keeps each interlamellar spacing by the wave plate, and described top each layer of thermoscreen connects into as a whole by molybdenum rod, be through on the molybdenum rod with small-sized molybdenum piece, place between each layer, the spacing that keeps each laminate material, described bottom each layer of thermoscreen connects to form an integral body by molybdenum rod, is through on the molybdenum rod with small-sized molybdenum piece, place between each layer, keep the spacing of each laminate material.
4. a kind of novel sapphire crystal growth stove combined type thermoscreen according to claim 1 system is characterized in that described top thermoscreen has the seed crystal through hole in the centre, so that seed rod, seed crystal can therefrom pass through.
5. a kind of novel sapphire crystal growth stove combined type thermoscreen according to claim 2 system, it is characterized in that, described side thermoscreen, the employed tungsten plate of top thermoscreen and bottom thermoscreen and molybdenum plate, purity is 99.95%, thickness is 0.5mm to 5mm, and distance between plates is 0.5mm to 5mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220663576 CN203049093U (en) | 2012-12-04 | 2012-12-04 | Novel combined heat shield system of sapphire crystal growth furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220663576 CN203049093U (en) | 2012-12-04 | 2012-12-04 | Novel combined heat shield system of sapphire crystal growth furnace |
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| CN203049093U true CN203049093U (en) | 2013-07-10 |
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| CN 201220663576 Expired - Fee Related CN203049093U (en) | 2012-12-04 | 2012-12-04 | Novel combined heat shield system of sapphire crystal growth furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451724A (en) * | 2013-08-28 | 2013-12-18 | 苏州巍迩光电科技有限公司 | Thermal insulation structure with adjustable cold core for growth of sapphire single crystals by virtue of kyropoulos method |
| CN105019023A (en) * | 2015-08-26 | 2015-11-04 | 江苏中电振华晶体技术有限公司 | Seeding method for growth of sapphire crystal with KY (Kyropoulos) method |
-
2012
- 2012-12-04 CN CN 201220663576 patent/CN203049093U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451724A (en) * | 2013-08-28 | 2013-12-18 | 苏州巍迩光电科技有限公司 | Thermal insulation structure with adjustable cold core for growth of sapphire single crystals by virtue of kyropoulos method |
| CN105019023A (en) * | 2015-08-26 | 2015-11-04 | 江苏中电振华晶体技术有限公司 | Seeding method for growth of sapphire crystal with KY (Kyropoulos) method |
| CN105019023B (en) * | 2015-08-26 | 2017-08-11 | 江苏中电振华晶体技术有限公司 | A kind of seeding methods of kyropoulos growing sapphire crystal |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130710 Termination date: 20131204 |