CN208478316U - 薄膜封装器件以及太阳能电池 - Google Patents
薄膜封装器件以及太阳能电池 Download PDFInfo
- Publication number
- CN208478316U CN208478316U CN201820895089.6U CN201820895089U CN208478316U CN 208478316 U CN208478316 U CN 208478316U CN 201820895089 U CN201820895089 U CN 201820895089U CN 208478316 U CN208478316 U CN 208478316U
- Authority
- CN
- China
- Prior art keywords
- organic
- thin
- thin film
- film
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 169
- 239000010408 film Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005538 encapsulation Methods 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 127
- 239000002346 layers by function Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 10
- 230000035755 proliferation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (9)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820895089.6U CN208478316U (zh) | 2018-06-08 | 2018-06-08 | 薄膜封装器件以及太阳能电池 |
PCT/CN2018/098057 WO2019232905A1 (zh) | 2018-06-08 | 2018-08-01 | 薄膜封装器件以及太阳能电池 |
EP18187642.6A EP3579281A1 (en) | 2018-06-08 | 2018-08-07 | Thin film package device and solar cell |
US16/126,456 US20190378942A1 (en) | 2018-06-08 | 2018-09-10 | Thin film packaging device and solar cell |
JP2018003729U JP3219220U (ja) | 2018-06-08 | 2018-09-26 | 薄膜パッケージング装置、及び太陽電池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820895089.6U CN208478316U (zh) | 2018-06-08 | 2018-06-08 | 薄膜封装器件以及太阳能电池 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN208478316U true CN208478316U (zh) | 2019-02-05 |
Family
ID=63254523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201820895089.6U Active CN208478316U (zh) | 2018-06-08 | 2018-06-08 | 薄膜封装器件以及太阳能电池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190378942A1 (zh) |
EP (1) | EP3579281A1 (zh) |
JP (1) | JP3219220U (zh) |
CN (1) | CN208478316U (zh) |
WO (1) | WO2019232905A1 (zh) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070196682A1 (en) * | 1999-10-25 | 2007-08-23 | Visser Robert J | Three dimensional multilayer barrier and method of making |
US7198832B2 (en) * | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
WO2008142645A1 (en) * | 2007-05-24 | 2008-11-27 | Koninklijke Philips Electronics N.V. | Encapsulation for an electronic thin film device |
TWI501441B (zh) * | 2012-08-24 | 2015-09-21 | Ind Tech Res Inst | 非連續複合阻障層、其形成方法及包含其之封裝結構 |
CN104269426A (zh) * | 2014-09-01 | 2015-01-07 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法和显示装置 |
CN105206763B (zh) * | 2015-10-21 | 2018-01-23 | 京东方科技集团股份有限公司 | 柔性显示器及其制造方法 |
CN106684256A (zh) * | 2016-12-23 | 2017-05-17 | 上海天马有机发光显示技术有限公司 | 一种显示面板及其制作方法 |
-
2018
- 2018-06-08 CN CN201820895089.6U patent/CN208478316U/zh active Active
- 2018-08-01 WO PCT/CN2018/098057 patent/WO2019232905A1/zh active Application Filing
- 2018-08-07 EP EP18187642.6A patent/EP3579281A1/en not_active Withdrawn
- 2018-09-10 US US16/126,456 patent/US20190378942A1/en not_active Abandoned
- 2018-09-26 JP JP2018003729U patent/JP3219220U/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP3219220U (ja) | 2018-12-06 |
EP3579281A1 (en) | 2019-12-11 |
US20190378942A1 (en) | 2019-12-12 |
WO2019232905A1 (zh) | 2019-12-12 |
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210104 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Beijing Huihong Technology Co., Ltd Address before: 101407 Yanqi Industrial Development Zone, Huairou District, Beijing Patentee before: Hanergy New Material Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211029 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee before: Beijing Huihong Technology Co., Ltd |