CN208386811U - A kind of power-saving low-noise dual output frequency demultiplier - Google Patents
A kind of power-saving low-noise dual output frequency demultiplier Download PDFInfo
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- CN208386811U CN208386811U CN201820912704.XU CN201820912704U CN208386811U CN 208386811 U CN208386811 U CN 208386811U CN 201820912704 U CN201820912704 U CN 201820912704U CN 208386811 U CN208386811 U CN 208386811U
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Abstract
The utility model discloses a kind of power-saving low-noise dual output frequency demultipliers, including metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q4, antenna L, capacitor C2, chip IC 2 and antenna H, the grid of the antenna H connection metal-oxide-semiconductor Q2, drain electrode connection capacitor C2, capacitor C7 and the resistance R3 of metal-oxide-semiconductor Q2, the grid of the other end connection metal-oxide-semiconductor Q1 of capacitor C2, the drain electrode of metal-oxide-semiconductor Q1 connects capacitor C1 and resistance R6, the pin RF1 of the other end connection chip IC 2 of capacitor C1；The utility model is using the mode of oscillation for integrating phase-locked loop；This stable double vibrating system are made of phase discriminator, loop filtering, voltage controlled oscillator, frequency multiplication operation etc.；Solve traditional sucrose mode of oscillation frequency is unstable and high and low temperature environment in frequency change big phenomenon；The process of manual debugging is eliminated in procedure for producing, saves human cost and improves product yield.
Description
Technical field
The utility model relates to a kind of frequency demultiplier, specifically a kind of power-saving low-noise dual output frequency demultiplier.
Background technique
With the development of science and technology and life, the transmitting of communication is also more more and more universal, and satellite television ratio is watched in family
It is higher and higher.Wherein, frequency demultiplier is device essential to watching satellite television, but frequency demultiplier product its noise control on the market at present
In terms of the jamproof ability of sound and output function, it is not able to satisfy the demand of client more and more；
With satellite television it is universal, a LNBF is only capable of watching TV program for sole user end, more next
It cannot more meet customer need；With the continuous rising of human cost and electronic component price in recent years.Cause manufacture at
This and Design and procurement cost are faced with test for enterprise, more and more.
Utility model content
The purpose of this utility model is to provide a kind of power-saving low-noise dual output frequency demultipliers, to solve above-mentioned background skill
The problem of being proposed in art.
To achieve the above object, the utility model provides the following technical solutions:
A kind of power-saving low-noise dual output frequency demultiplier, including metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q4, antenna L, capacitor C2, chip IC 2
Drain electrode with antenna H, the grid of the antenna H connection metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q2 connects capacitor C2, capacitor C7 and resistance R3,
The grid of the other end connection metal-oxide-semiconductor Q1 of capacitor C2, the drain electrode of metal-oxide-semiconductor Q1 connect capacitor C1 and resistance R6, and capacitor C1's is another
The other end and ground of the source electrode connection capacitor C7 of the pin RF1 of end connection chip IC 2, metal-oxide-semiconductor Q2, the source electrode connection of metal-oxide-semiconductor Q1
Capacitor C10 and ground, the grid of antenna L connection metal-oxide-semiconductor Q4, drain electrode connection capacitor C21, capacitor C22 and the resistance of metal-oxide-semiconductor Q4
The grid of the other end connection metal-oxide-semiconductor Q3 of R10, capacitor C23, the drain electrode of metal-oxide-semiconductor Q3 connect capacitor C20 and resistance R12, capacitor
The other end and ground of the source electrode connection capacitor C22 of the pin RF2 of the other end connection chip IC 2 of C20, metal-oxide-semiconductor Q4, metal-oxide-semiconductor Q3
Source electrode connection capacitor C24 and ground, pin LF1 connection the capacitor C4, capacitor C4 of chip IC 2 other end connection output end S1,
The cathode of the pin 5v connection diode D1 of chip IC 2 and the cathode of diode D2, diode D1 anode connection capacitor C8 and
The pin 3 of chip IC 1, the pin 1 of chip IC 1 connect capacitor C9 and output end S1, the anode connection capacitor C16 of diode D2 and
The pin 1 of the pin 3 of chip IC 3, chip IC 3 connects capacitor C18 and output end S2, the pin xta connection crystal oscillator of chip IC 2
SDM1。
The model RT330 of the chip IC 2 as a further solution of the present invention,.
The model of the chip IC 1 and chip IC 3 is 78L06 as a further solution of the present invention,.
The model CKRF7514 of the metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q4 as a further solution of the present invention,.
The crystal oscillator SDM1 is 25MHz crystal oscillator as a further solution of the present invention,.
Compared with prior art, as the beneficial effects of the utility model are: one；The utility model is returned using integrated locking phase
The mode of oscillation on road；This stable double vibrating system are made of phase discriminator, loop filtering, voltage controlled oscillator, frequency multiplication operation etc.；It solves
The frequency of traditional sucrose mode of oscillation is unstable and high and low temperature environment in frequency change phenomenon greatly；It is saved in procedure for producing
The process of manual debugging has been gone, human cost is saved and has improved product fine rate.
Two；The utility model has used the single integrated QFN4* of high narrow frequency pectination type microstripline alien frequencies bandpass filter, collocation
4 locking phase chips;RT330；Constitute four into the two bis- local oscillator full frequency band output systems of 9.75GHz, 10.6GHz gone out.Using integrated square
The output of configuration amplifying circuit has higher saturation tolerance, lower saturation distortion, exports it with two channel equalizations of time-division
Design；Using independent polarization switching mode and transmission, prevent to interfere with each other and switch wild effect between signal.
Three: due to local oscillator using Single-Chip Integration phase locking unit, the interference between local oscillator is preferably minimized.FET
Power supply system obtained through the oscillation of OFN-24 RT330 chips, oscillating circuit of powering without bias needed in addition designing FET；
It obtains and a large amount of utilization that is integrated, reducing peripheral electronic circuitry；Reduce power consumption, significantly energy saving.
Detailed description of the invention
Fig. 1 is the integrated stand composition of the utility model.
Fig. 2 is the principles of the present invention schematic diagram.
Fig. 3 is the circuit diagram of the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Please refer to Fig. 1-3, a kind of power-saving low-noise dual output frequency demultiplier, including metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q4, antenna L, electricity
Hold C2, chip IC 2 and antenna H, the drain electrode of the grid of the antenna H connection metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q2 connects capacitor C2, capacitor
The grid of the other end connection metal-oxide-semiconductor Q1 of C7 and resistance R3, capacitor C2, the drain electrode of metal-oxide-semiconductor Q1 connect capacitor C1 and resistance R6, electricity
Hold the pin RF1 of the other end connection chip IC 2 of C1, the other end and ground of the source electrode connection capacitor C7 of metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q1
Source electrode connection capacitor C10 and ground, the grid of antenna L connection metal-oxide-semiconductor Q4, drain electrode connection the capacitor C21, capacitor of metal-oxide-semiconductor Q4
The grid of the other end connection metal-oxide-semiconductor Q3 of C22 and resistance R10, capacitor C23, the drain electrode connection capacitor C20 and resistance of metal-oxide-semiconductor Q3
The other end and ground of the source electrode connection capacitor C22 of the pin RF2 of the other end connection chip IC 2 of R12, capacitor C20, metal-oxide-semiconductor Q4,
The other end connection of the source electrode connection capacitor C24 and ground of metal-oxide-semiconductor Q3, pin LF1 connection the capacitor C4, capacitor C4 of chip IC 2 are defeated
The anode of outlet S1, the cathode of the pin 5v connection diode D1 of chip IC 2 and the cathode of diode D2, diode D1 connects electricity
Hold the pin 3 of C8 and chip IC 1, the pin 1 of chip IC 1 connects capacitor C9 and output end S1, and the anode of diode D2 connects electricity
Hold the pin 3 of C16 and chip IC 3, the pin 1 of chip IC 3 connects capacitor C18 and output end S2, and the pin xta of chip IC 2 connects
Meet crystal oscillator SDM1.
The model RT330 of chip IC 2.The model of chip IC 1 and chip IC 3 is 78L06.Metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q4
Model CKRF7514.The model 25MHz crystal oscillator of crystal oscillator SDM1.
The working principle of the utility model is: satellite TV signal letter is received through LNB integrated body, is incited somebody to action by waveguide
Communications protocol frequency band is that 10.7GHz --- 12.75GHz satellite TV signal completely imports；Through metal structure be filtered by
(frequency before 10.7GHz, after 12.75GHz) is inhibited and is filtered out.Signal is through horizontal polarization and two kinds of vertical polarization
Mode is received；Through level-one amplification, second level amplification, micro-strip high-pass filtering, integrate phase locking unit, through narrow wave alien frequencies suppression circuit:
Export two groups, four modes: V/L, H/L, V/H, H/H signal, respectively by two ports outputs for users to use.
Satellite-signal receives through H/ horizontal polarization probe, is input to first order metal-oxide-semiconductor Q2(CKRF7514) carry out low noise
Amplification, its VGS provide required -0.3V--0.5V electricity by 2 pin 2 of chip IC after capacitor C12 filtering, by resistance R5 decompression
Pressure；VDS voltage makes its work in optimum state by pin 1, through capacitor C7 filtering, dropping resistor R3 offer+2V voltage.Through amplifying
Signal afterwards has capacitor C2 to be coupled to metal-oxide-semiconductor Q1, carry out secondary amplification；It is set there are enough power driving signals to transmit.Signal warp
Coupled capacitor C1 is exported to micro-strip high-pass filtering and is filtered out out of band signal；And it is input to the 24th pin of chip IC 2 while and crystal oscillator
SMD1 is compared, frequency multiplication operation/mixing etc., obtains double local oscillators of 9.75GHz/10.6GHz；Divided again by matrix form function by it
The channel LV/LH, HV/HH amplifies, again by tonepulse system switch signal respectively through RT330 the 19th, 13 feet export it is complete
Frequency end signal satellite TV signal.
Satellite-signal receives through V/ vertical polarization probe, is input to the first order metal-oxide-semiconductor Q4 progress low noise amplification, its VGS
By 2 pin 5 of chip IC, -0.3V--0.5V voltage needed for offer after capacitor C25 filtering, being depressured by R11；VDS voltage by
Pin 6 makes its work in optimum state through capacitor C22 filtering, dropping resistor R10 offer+2V voltage.Amplified signal has
C21 is coupled to metal-oxide-semiconductor Q3, carries out secondary amplification；It is set there are enough power driving signals to transmit.The coupled capacitor C20 of signal is defeated
Out of band signal is filtered out to micro-strip high-pass filtering out；And it is input to the 7th pin of chip IC 2.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (5)
1. a kind of power-saving low-noise dual output frequency demultiplier, including metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q4, antenna L, capacitor C2,2 and of chip IC
Antenna H, which is characterized in that the grid of the antenna H connection metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q2 drain electrode connection capacitor C2, capacitor C7 and
The grid of the other end connection metal-oxide-semiconductor Q1 of resistance R3, capacitor C2, the drain electrode of metal-oxide-semiconductor Q1 connect capacitor C1 and resistance R6, capacitor C1
The other end connection chip IC 2 pin RF1, metal-oxide-semiconductor Q2 source electrode connection capacitor C7 the other end and ground, the source of metal-oxide-semiconductor Q1
Pole connects capacitor C10 and ground, the grid of antenna L connection metal-oxide-semiconductor Q4, drain electrode connection capacitor C21, capacitor C22 and the electricity of metal-oxide-semiconductor Q4
R10, the grid of the other end connection metal-oxide-semiconductor Q3 of capacitor C23 are hindered, the drain electrode of metal-oxide-semiconductor Q3 connects capacitor C20 and resistance R12, capacitor
The other end and ground of the source electrode connection capacitor C22 of the pin RF2 of the other end connection chip IC 2 of C20, metal-oxide-semiconductor Q4, metal-oxide-semiconductor Q3
Source electrode connection capacitor C24 and ground, pin LF1 connection the capacitor C4, capacitor C4 of chip IC 2 other end connection output end S1,
The cathode of the pin 5v connection diode D1 of chip IC 2 and the cathode of diode D2, diode D1 anode connection capacitor C8 and
The pin 3 of chip IC 1, the pin 1 of chip IC 1 connect capacitor C9 and output end S1, the anode connection capacitor C16 of diode D2 and
The pin 1 of the pin 3 of chip IC 3, chip IC 3 connects capacitor C18 and output end S2, the pin xta connection crystal oscillator of chip IC 2
SDM1。
2. a kind of power-saving low-noise dual output frequency demultiplier according to claim 1, which is characterized in that the chip IC 2
Model RT330.
3. a kind of power-saving low-noise dual output frequency demultiplier according to claim 1, which is characterized in that the chip IC 1
Model with chip IC 3 is 78L06.
4. a kind of power-saving low-noise dual output frequency demultiplier according to claim 1, which is characterized in that the metal-oxide-semiconductor Q2
With the model CKRF7514 of metal-oxide-semiconductor Q4.
5. a kind of power-saving low-noise dual output frequency demultiplier according to claim 1, which is characterized in that the crystal oscillator SDM1
For 25MHz crystal oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820912704.XU CN208386811U (en) | 2018-06-12 | 2018-06-12 | A kind of power-saving low-noise dual output frequency demultiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820912704.XU CN208386811U (en) | 2018-06-12 | 2018-06-12 | A kind of power-saving low-noise dual output frequency demultiplier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208386811U true CN208386811U (en) | 2019-01-15 |
Family
ID=64967370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820912704.XU Expired - Fee Related CN208386811U (en) | 2018-06-12 | 2018-06-12 | A kind of power-saving low-noise dual output frequency demultiplier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208386811U (en) |
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2018
- 2018-06-12 CN CN201820912704.XU patent/CN208386811U/en not_active Expired - Fee Related
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Granted publication date: 20190115 |