CN208353300U - A kind of high efficiency F class stacking power amplifier based on compact resonator - Google Patents
A kind of high efficiency F class stacking power amplifier based on compact resonator Download PDFInfo
- Publication number
- CN208353300U CN208353300U CN201820926664.4U CN201820926664U CN208353300U CN 208353300 U CN208353300 U CN 208353300U CN 201820926664 U CN201820926664 U CN 201820926664U CN 208353300 U CN208353300 U CN 208353300U
- Authority
- CN
- China
- Prior art keywords
- microstrip line
- connection
- class
- open circuit
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 230000003321 amplification Effects 0.000 claims abstract description 39
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 6
- 230000009286 beneficial effect Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
Abstract
The utility model discloses a kind of, and the high efficiency F class based on compact resonator stacks power amplifier, stacks automatic biasing power amplification network, the F class matching network based on compact resonator, grid power supply biasing networks and drain electrode power supply biasing networks including input fundamental wave matching network, three.The utility model uses the three stacked transistors structures based on self-bias structure, and combine the F class matching network based on compact resonator, so that circuit has high efficiency, high-gain, high-power output ability while taking into account miniaturization, and there is good input and output matching, while not needing additional piled grids bias voltage.
Description
Technical field
The utility model belongs to field effect transistor radio-frequency power amplifier and technical field of integrated circuits, and in particular to one
High efficiency F class of the kind based on compact resonator stacks the design of power amplifier.
Background technique
With the development of modern military, commercial communication technology, radio-frequency front-end transmitter is also to miniaturization, high efficiency, Gao Zeng
Beneficial, high-power output direction is developed.Therefore the urgent demand miniaturization in market, high efficiency, high-gain, high-power power are put
Big device.However, always existing some design challenges in the design of traditional high efficiency power amplifier, it is mainly reflected in small-sized
Change, high efficiency index mutually restricts: the efficiency operation in order to guarantee amplifier, transistor will work under the mode of overdriving,
Similar to switch state, but the harmonic impedance control unit for switch power amplifier of overdriving generally requires to occupy biggish electricity
Road size, this affects the index of circuit miniaturization.
The circuit structure of common high efficiency power amplifier has very much, most typically tradition AB class, C class, switching mode D
Class, E class, F power-like amplifier etc., but these high-efficiency amplifiers still have some shortcomings, are mainly reflected in: traditional AB
Class A amplifier A theoretical limit efficiency is 78.5%, relatively low；C class A amplifier A limiting efficiency is 100%, but power output energy
Power is lower；The needs such as switching mode D class, E class, F power-like amplifier rely on accurate harmonic impedance control or stringent impedance
Matching condition, these controls and condition generally require to occupy biggish circuit size.In addition to this, existing high efficiency field-effect tube
Power amplifier is often based on what single common source transistors were realized, is limited by single transistor, power output capacity and
Power gain ability is all relatively low.
Utility model content
The purpose of this utility model is to propose that a kind of high efficiency F class based on compact resonator stacks power amplification
Device is realized using automatic biasing transistor stack technology and high efficiency F class matching technique and minimizes lower high efficiency, high-gain, height
Power out-put characteristic.
The technical solution of the utility model are as follows: a kind of high efficiency F class stacking power amplifier based on compact resonator,
Including input fundamental wave matching network, three stack automatic biasing power amplification networks, the F class matching network based on compact resonator,
Grid power supply biasing networks and drain electrode power supply biasing networks；The input terminal for inputting fundamental wave matching network is entire high efficiency F class
The input terminal of power amplifier is stacked, output end is connect with the input terminal of three stacking automatic biasing power amplification networks；Based on tight
Gather type resonator F class matching network output end be entire high efficiency F class stack power amplifier output end, input terminal
It is connect respectively with the output end of three stacking automatic biasing power amplification networks and drain electrode power supply biasing networks；Three stack automatic biasing function
The input terminal of rate amplification network is also connect with grid power supply biasing networks, and drain electrode power supply biasing networks also stack automatic biasing function with three
Rate amplification network connection.
The beneficial effects of the utility model are: the utility model uses the three stacked transistors structures based on self-bias structure,
And the F class matching network based on compact resonator is combined, so that circuit has high efficiency, height while taking into account miniaturization
Gain, high-power output ability, and there is good input and output matching, while not needing additional piled grids biased electrical
Pressure.
Further, input fundamental wave matching network includes capacitor C1, capacitor C1One end be input fundamental wave matching network it is defeated
Enter end, the other end and microstrip line TL1One end connection, microstrip line TL1The other end respectively with microstrip line TL4One end and
Open a way microstrip line TL2Connection, microstrip line TL4The other end be input fundamental wave matching network output end.
The beneficial effect of above-mentioned further scheme is: the input fundamental wave matching network that the utility model uses can be realized pair
The fundamental signal of radio frequency input carries out impedance matching, wherein microstrip line TL1, microstrip line TL4With open circuit microstrip line TL2The T-type of composition
Matching minor matters can effectively strengthen the effect of the impedance matching to signal.
Further, three stacking automatic biasing power amplification networks include the top layer for stacking and constituting that is connected according to source drain
Transistor Md3, middle layer transistor Md2And bottom transistor Md1；Bottom transistor Md1Source electrode ground connection, grid three
Stack the input terminal of automatic biasing power amplification network；Middle layer transistor Md2Grid respectively with resistance R2One end and first
The connection of grid compensation circuit, resistance R2The other end respectively with resistance R4One end and ground resistance R5Connection, first grid are mended
Repaying circuit includes concatenated grid steady resistance R3With compensation of ground capacitor C4；Top layer transistor Md3Drain electrode be three stack self-bias
Set the output end of power amplification network, grid respectively with resistance R6One end and second grid compensation circuit connection, resistance R6
The other end respectively with resistance R4The other end and resistance R7One end connection, resistance R7The other end and drain electrode for electrical bias
Network connection, second grid compensation circuit includes concatenated grid steady resistance R1With compensation of ground capacitor C5；Bottom transistor
Md1Drain electrode and middle layer transistor Md2Source electrode between pass through microstrip line TL5Connection, middle layer transistor Md2Drain electrode and
Top layer transistor Md3Source electrode between pass through microstrip line TL6Connection.
The beneficial effect of above-mentioned further scheme is: the core architecture of the utility model stacks automatic biasing using three and amplifies net
Network often uses one-transistor compared to traditional high efficiency switch power amplifier, is limited by single transistor, power
Fan-out capability and power gain ability are all relatively low, and the three stacking automatic biasing amplification networks that the utility model uses can help
Existing high efficiency switch power amplifier hoisting power capacity and power gain, and the three stacking self-bias that the utility model uses
Putting big network joined automatic biasing structure, while not need additional piled grids bias voltage, enormously simplify stacking knot
The peripheral gates power supply structure of structure.
Further, grid power supply biasing networks include microstrip line TL3, microstrip line TL3One end with three stack automatic biasing function
Rate amplify network input terminal connection, the other end respectively with ground capacity C2, ground capacity C3And low pressure bias supply VG connects
It connects.
The beneficial effect of above-mentioned further scheme is: grid powers biasing networks can be to three stacking automatic biasing power amplifications
Bottom transistor Md in network1Play good grid power supply and bias.
Further, drain electrode power supply biasing networks include microstrip line TL24, microstrip line TL24One end with based on compact it is humorous
Shake device F class matching network input terminal connection, the other end respectively with ground capacity C6, ground capacity C7, resistance R7And it is high
Press bias supply VD connection.
The beneficial effect of above-mentioned further scheme is: drain electrode power supply biasing networks can stack automatic biasing power amplification to three
Top layer transistor Md in network3Play good drain electrode power supply and bias.
Further, the F class matching network based on compact resonator includes the microstrip line TL being sequentially connected in series7, microstrip line
TL8, microstrip line TL19, microstrip line TL20, microstrip line TL21, capacitor C8And microstrip line TL22, microstrip line TL7Not connected microstrip line
TL8One end be the F class matching network based on compact resonator input terminal, microstrip line TL22Not connected capacitor C8One end
With ground connection microstrip line TL23Connection, and the output end as the F class matching network based on compact resonator；Microstrip line TL8With it is micro-
Band line TL19Connecting node also with open circuit microstrip line TL9And open circuit microstrip line TL14Connection；Microstrip line TL19With microstrip line TL20
Connecting node also with microstrip line TL11One end and microstrip line TL16One end connection, microstrip line TL11The other end respectively with
Open a way microstrip line TL10And open circuit microstrip line TL12Connection, microstrip line TL16The other end respectively with open circuit microstrip line TL15And
Open a way microstrip line TL17Connection；Microstrip line TL20With microstrip line TL21Connecting node also with open circuit microstrip line TL13And open circuit is micro-
Band line TL18Connection；Open a way microstrip line TL9With open circuit microstrip line TL10It intercouples, open a way microstrip line TL12With open circuit microstrip line
TL13It intercouples, open a way microstrip line TL14With open circuit microstrip line TL15It intercouples, open a way microstrip line TL17With open circuit microstrip line
TL18It intercouples.
The beneficial effect of above-mentioned further scheme is: the output matching network of the utility model, which uses, is based on compact resonance
The high efficiency F class of device matches framework, and the output network compared to existing switch power amplifier is often directed to the defeated of narrowband
Impedance is independently controlled out, and generally requires to occupy biggish circuit size, the utility model proposed based on tight
The output impedance that the high efficiency F class matching framework of type resonator that gathers can make circuit realization be similar to three rank F class working conditions
Fundamental wave and second harmonic impedance short circuit and triple-frequency harmonics open a way, to realize high power and high efficiency index.
Detailed description of the invention
Fig. 1 show a kind of high efficiency F class based on compact resonator provided by the embodiment of the utility model and stacks function
Rate amplifier functional block diagram.
Fig. 2 show a kind of high efficiency F class based on compact resonator provided by the embodiment of the utility model and stacks function
Rate amplifier circuit diagram.
Specific embodiment
It is described in detail the illustrative embodiments of the utility model with reference to the drawings.It should be appreciated that showing in attached drawing
It is only exemplary out with the embodiment of description, it is intended that illustrate the principles of the present invention and spirit, and not limit this
The range of utility model.
The utility model embodiment provides a kind of high efficiency F class stacking power amplifier based on compact resonator,
As shown in Figure 1, including input fundamental wave matching network, three stacking automatic biasing power amplification networks, the F class based on compact resonator
Matching network, grid power supply biasing networks and drain electrode power supply biasing networks；It is entire for inputting the input terminal of fundamental wave matching network
High efficiency F class stacks the input terminal of power amplifier, and the input terminal that output end and three stack automatic biasing power amplification network connects
It connects；The output end of F class matching network based on compact resonator is the output that entire high efficiency F class stacks power amplifier
End, input terminal are connect with the output end of three stacking automatic biasing power amplification networks and drain electrode power supply biasing networks respectively；Three
The input terminal for stacking automatic biasing power amplification network also connect with grid power supply biasing networks, and drain electrode powers biasing networks also with three
Stack automatic biasing power amplification network connection.
As shown in Fig. 2, input fundamental wave matching network includes capacitor C1, capacitor C1One end be input fundamental wave matching network
Input terminal, the other end and microstrip line TL1One end connection, microstrip line TL1The other end respectively with microstrip line TL4One end with
And open circuit microstrip line TL2Connection, microstrip line TL4The other end be input fundamental wave matching network output end.
Three stacking automatic biasing power amplification networks include the top layer transistor Md for stacking and constituting that is connected according to source drain3、
Middle layer transistor Md2And bottom transistor Md1；Bottom transistor Md1Source electrode ground connection, grid be three stack automatic biasings
The input terminal of power amplification network；Middle layer transistor Md2Grid respectively with resistance R2One end and first grid compensation electricity
Road connection, resistance R2The other end respectively with resistance R4One end and ground resistance R5Connection, first grid compensation circuit include
Concatenated grid steady resistance R3With compensation of ground capacitor C4；Top layer transistor Md3Drain electrode be three stack automatic biasing power amplifications
The output end of network, grid respectively with resistance R6One end and second grid compensation circuit connection, resistance R6The other end point
Not with resistance R4The other end and resistance R7One end connection, resistance R7The other end connect with drain electrode power supply biasing networks, the
Two grid compensation circuits include concatenated grid steady resistance R1With compensation of ground capacitor C5；Bottom transistor Md1Drain electrode and in
Interbed transistor Md2Source electrode between pass through microstrip line TL5Connection, middle layer transistor Md2Drain electrode and top layer transistor Md3
Source electrode between pass through microstrip line TL6Connection.
Grid power supply biasing networks include microstrip line TL3, microstrip line TL3One end with three stack automatic biasing power amplification nets
The input terminal of network connects, the other end respectively with ground capacity C2, ground capacity C3And low pressure bias supply VG connection.
Drain electrode power supply biasing networks include microstrip line TL24, microstrip line TL24One end and the F class based on compact resonator
The input terminal of matching network connects, the other end respectively with ground capacity C6, ground capacity C7, resistance R7And HVB high voltage bias electricity
Source VD connection.
F class matching network based on compact resonator includes the microstrip line TL being sequentially connected in series7, microstrip line TL8, microstrip line
TL19, microstrip line TL20, microstrip line TL21, capacitor C8And microstrip line TL22, microstrip line TL7Not connected microstrip line TL8One end be
The input terminal of F class matching network based on compact resonator, microstrip line TL22Not connected capacitor C8One end and ground connection microstrip line
TL23Connection, and the output end as the F class matching network based on compact resonator；Microstrip line TL8With microstrip line TL19Company
Connect node also with open circuit microstrip line TL9And open circuit microstrip line TL14Connection；Microstrip line TL19With microstrip line TL20Connecting node
Also with microstrip line TL11One end and microstrip line TL16One end connection, microstrip line TL11The other end respectively with open circuit microstrip line
TL10And open circuit microstrip line TL12Connection, microstrip line TL16The other end respectively with open circuit microstrip line TL15And open circuit microstrip line
TL17Connection；Microstrip line TL20With microstrip line TL21Connecting node also with open circuit microstrip line TL13And open circuit microstrip line TL18Even
It connects；Open a way microstrip line TL9With open circuit microstrip line TL10It intercouples, open a way microstrip line TL12With open circuit microstrip line TL13Phase mutual coupling
It closes, open a way microstrip line TL14With open circuit microstrip line TL15It intercouples, open a way microstrip line TL17With open circuit microstrip line TL18Phase mutual coupling
It closes.
It is introduced below with reference to concrete operating principle and process of the Fig. 2 to the utility model:
Radio frequency inputs fundamental signal and enters the input fundamental wave matching that high efficiency F class stacks power amplifier by input terminal IN
Network enters three after input fundamental wave matching network carries out impedance matching and stacks automatic biasing power amplification network.
Three, which stack automatic biasing power amplification network, uses according to the connected transistor arrangement pair for stacking composition of source drain
Input signal amplifies, and can effectively promote power capacity and power gain that high efficiency F class stacks power amplifier.Simultaneously
It is stacked in automatic biasing power amplification network three, by resistance R2, resistance R4, resistance R5, resistance R6With resistance R7It together constitutes certainly
Bias structure, therefore three stacking automatic biasing power amplification networks do not need additional piled grids bias voltage, enormously simplify
The peripheral gates power supply structure of stacked structure.
The amplified signal of automatic biasing power amplification network, which is stacked, through three enters the F class pair net based on compact resonator
After network carries out impedance matching, ultimately forms radio frequency output signal and reach output end OUT.F class matching based on compact resonator
In network, due to the microstrip line TL that opens a way9With open circuit microstrip line TL10It intercouples, open a way microstrip line TL12With open circuit microstrip line TL13
It intercouples, open a way microstrip line TL14With open circuit microstrip line TL15It intercouples, open a way microstrip line TL17With open circuit microstrip line TL18Phase
Mutual coupling, thus microstrip line TL9~TL18The high efficiency F class matching framework based on compact resonator is constituted, electricity can be made
Road realizes that the fundamental wave for the output impedance for being similar to three rank F class working conditions is opened a way with second harmonic impedance short circuit and triple-frequency harmonics,
To realize high power and high efficiency index.
In addition, grid power supply biasing networks can stack the bottom transistor Md in automatic biasing power amplification network to three1
Play good grid power supply and bias；Drain electrode power supply biasing networks can stack in automatic biasing power amplification network to three
Top layer transistor Md3Play good drain electrode power supply and bias.
In the utility model embodiment, the size of the size of transistor and other DC feedback resistance, compensating electric capacity is comprehensive
It is determined after the indices such as gain, bandwidth and the output power of the entire circuit of conjunction consideration, passes through the layout design and conjunction in later period
Removing the work office can be better achieved required indices, realize the high efficiency, high-gain, high-power output energy of ultra wide band
Power.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this reality
With novel principle, it should be understood that the scope of the present invention is not limited to such specific embodiments and embodiments.
Those skilled in the art can be made according to the technical disclosures disclosed by the utility model it is various do not depart from it is practical
Novel substantive various other specific variations and combinations, these variations and combinations are still within the protection scope of the present invention.
Claims (6)
1. a kind of high efficiency F class based on compact resonator stacks power amplifier, which is characterized in that including inputting fundamental wave
Distribution network, three stack automatic biasing power amplification network, the F class matching network based on compact resonator, grid for electrical bias net
Network and drain electrode power supply biasing networks；
The input terminal of the input fundamental wave matching network is the input terminal that the entire high efficiency F class stacks power amplifier,
Output end is connect with the input terminal of three stacking automatic biasing power amplification networks；
The output end of the F class matching network based on compact resonator is that the entire high efficiency F class stacks power amplification
The output end of device, the output end and drain electrode power supply biasing networks that input terminal stacks automatic biasing power amplification network with three respectively
Connection；
The input terminal of the three stackings automatic biasing power amplification network is also connect with grid power supply biasing networks, the drain electrode power supply
Biasing networks also stack automatic biasing power amplification network connection with three.
2. high efficiency F class according to claim 1 stacks power amplifier, which is characterized in that the input fundamental wave matching
Network includes capacitor C1, the capacitor C1One end be the input terminal for inputting fundamental wave matching network, the other end and microstrip line TL1
One end connection, the microstrip line TL1The other end respectively with microstrip line TL4One end and open circuit microstrip line TL2Connection, institute
State microstrip line TL4The other end be input fundamental wave matching network output end.
3. high efficiency F class according to claim 1 stacks power amplifier, which is characterized in that described three stack automatic biasing
Power amplification network includes the top layer transistor Md for stacking and constituting that is connected according to source drain3, middle layer transistor Md2And bottom
Layer transistor Md1；
The bottom transistor Md1Source electrode ground connection, grid be three stack automatic biasing power amplification networks input terminals；
The middle layer transistor Md2Grid respectively with resistance R2One end and first grid compensation circuit connection, the electricity
Hinder R2The other end respectively with resistance R4One end and ground resistance R5Connection, the first grid compensation circuit include series connection
Grid steady resistance R3With compensation of ground capacitor C4；
The top layer transistor Md3Drain electrode be three stack automatic biasing power amplification networks output ends, grid respectively with resistance
R6One end and second grid compensation circuit connection, the resistance R6The other end respectively with resistance R4The other end and electricity
Hinder R7One end connection, the resistance R7The other end with drain electrode power supply biasing networks connect, the second grid compensation circuit packet
Include concatenated grid steady resistance R1With compensation of ground capacitor C5；
The bottom transistor Md1Drain electrode and middle layer transistor Md2Source electrode between pass through microstrip line TL5Connection, it is described in
Interbed transistor Md2Drain electrode and top layer transistor Md3Source electrode between pass through microstrip line TL6Connection.
4. high efficiency F class according to claim 1 stacks power amplifier, which is characterized in that the grid is for electrical bias
Network includes microstrip line TL3, the microstrip line TL3One end with three stacking automatic biasing power amplification networks input terminal connect,
The other end respectively with ground capacity C2, ground capacity C3And low pressure bias supply VG connection.
5. high efficiency F class according to claim 3 stacks power amplifier, which is characterized in that the drain electrode is for electrical bias
Network includes microstrip line TL24, the microstrip line TL24One end and the F class matching network based on compact resonator input terminal
Connection, the other end respectively with ground capacity C6, ground capacity C7, resistance R7And HVB high voltage bias power vd connection.
6. high efficiency F class according to claim 1 stacks power amplifier, which is characterized in that described humorous based on compact
The F class matching network of vibration device includes the microstrip line TL being sequentially connected in series7, microstrip line TL8, microstrip line TL19, microstrip line TL20, microstrip line
TL21, capacitor C8And microstrip line TL22, the microstrip line TL7Not connected microstrip line TL8One end be based on compact resonator
F class matching network input terminal, the microstrip line TL22Not connected capacitor C8One end and ground connection microstrip line TL23Connection, and make
For the output end of the F class matching network based on compact resonator；
The microstrip line TL8With microstrip line TL19Connecting node also with open circuit microstrip line TL9And open circuit microstrip line TL14Connection；
The microstrip line TL19With microstrip line TL20Connecting node also with microstrip line TL11One end and microstrip line TL16One end
Connection, the microstrip line TL11The other end respectively with open circuit microstrip line TL10And open circuit microstrip line TL12Connection, the micro-strip
Line TL16The other end respectively with open circuit microstrip line TL15And open circuit microstrip line TL17Connection；
The microstrip line TL20With microstrip line TL21Connecting node also with open circuit microstrip line TL13And open circuit microstrip line TL18Even
It connects；
The open circuit microstrip line TL9With open circuit microstrip line TL10It intercouples, the open circuit microstrip line TL12With open circuit microstrip line TL13
It intercouples, the open circuit microstrip line TL14With open circuit microstrip line TL15It intercouples, the open circuit microstrip line TL17It is micro- with opening a way
Band line TL18It intercouples.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820926664.4U CN208353300U (en) | 2018-06-15 | 2018-06-15 | A kind of high efficiency F class stacking power amplifier based on compact resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820926664.4U CN208353300U (en) | 2018-06-15 | 2018-06-15 | A kind of high efficiency F class stacking power amplifier based on compact resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208353300U true CN208353300U (en) | 2019-01-08 |
Family
ID=64883889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820926664.4U Withdrawn - After Issue CN208353300U (en) | 2018-06-15 | 2018-06-15 | A kind of high efficiency F class stacking power amplifier based on compact resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208353300U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599730A (en) * | 2018-06-15 | 2018-09-28 | 成都嘉纳海威科技有限责任公司 | A kind of high efficiency F classes stacking power amplifier based on compact resonator |
-
2018
- 2018-06-15 CN CN201820926664.4U patent/CN208353300U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599730A (en) * | 2018-06-15 | 2018-09-28 | 成都嘉纳海威科技有限责任公司 | A kind of high efficiency F classes stacking power amplifier based on compact resonator |
| CN108599730B (en) * | 2018-06-15 | 2023-10-27 | 成都嘉纳海威科技有限责任公司 | High-efficiency F-type stacked power amplifier based on compact resonator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101325158B1 (en) | Multy-Mode Dogerty Power Amplifier | |
| CN109167582B (en) | Broadband band-pass filtering power amplifier based on frequency selective coupling | |
| CN106411268A (en) | Power amplifier of distributed two-stack structure considering miller effect | |
| CN108768315A (en) | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling | |
| CN108574465A (en) | A kind of high efficiency F classes stacking power amplifier based on left-and-right-hand transmission line | |
| CN206259911U (en) | A kind of power amplifier of distributed two stacked structure for considering Miller effect | |
| CN109245735A (en) | A kind of high efficiency J class stacking power amplifier based on second harmonic injection technique | |
| CN107733381A (en) | A kind of High-efficiency high-gain Doherty stacks power amplifier | |
| CN106487338A (en) | A kind of power amplifier of distributed three stacked structure of consideration Miller effect | |
| CN209134365U (en) | A kind of high efficiency J class stacking power amplifier based on second harmonic injection technique | |
| CN207475495U (en) | A kind of High-efficiency high-gain Doherty stacks power amplifier | |
| CN208353299U (en) | A kind of continuous F power-like amplifier of high efficiency based on transistor stack technology | |
| CN108736847A (en) | High efficiency based on the control of accurate resonance circuit stacks power amplifier against D classes | |
| CN208539858U (en) | A kind of high-efficiency double-frequency F class stacking power amplifier based on accurate harmonic controling | |
| CN208539862U (en) | A kind of continuous inverse F class stacking power amplifier based on wave control technology | |
| CN208656727U (en) | A kind of high-power high-efficiency high-gain stacks power amplifier against F class | |
| CN108599730A (en) | A kind of high efficiency F classes stacking power amplifier based on compact resonator | |
| CN208539863U (en) | High efficiency based on the control of accurate resonance circuit stacks power amplifier against D class | |
| CN208353300U (en) | A kind of high efficiency F class stacking power amplifier based on compact resonator | |
| CN109274339A (en) | A kind of Doherty driving Doherty power amplifier | |
| CN110086439A (en) | It is applicable in the F class out-phase power amplification circuit and RF power combiner of 5G network | |
| CN109286376A (en) | A kind of high-efficiency double-frequency J class stacking power amplifier based on second harmonic control | |
| CN108763640A (en) | The Doherty power amplifier and its design method that high efficiency height retracts | |
| CN209134361U (en) | A kind of Doherty driving Doherty power amplifier | |
| CN106505901B (en) | A kind of linear-resonance combined type hyperfrequency inverter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190108 Effective date of abandoning: 20231027 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20190108 Effective date of abandoning: 20231027 |