CN208539858U - A kind of high-efficiency double-frequency F class stacking power amplifier based on accurate harmonic controling - Google Patents
A kind of high-efficiency double-frequency F class stacking power amplifier based on accurate harmonic controling Download PDFInfo
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Abstract
The high-efficiency double-frequency F class based on accurate harmonic controling that the utility model discloses a kind of stacks power amplifier, including double frequency input fundamental wave matching network, two stacking automatic biasing power amplification networks, double frequency F class output matching network, grid power supply biasing networks and drain electrode power supply biasing networks.The utility model uses the two stacked transistors structures based on self-bias structure, and combines double frequency F class output matching network, so that circuit has high efficiency, high-gain, high-power output ability under dual-frequency band operation mode.
Description
Technical field
The utility model belongs to field effect transistor radio-frequency power amplifier and technical field of integrated circuits, and in particular to one
High-efficiency double-frequency F class of the kind based on accurate harmonic controling stacks the design of power amplifier.
Background technique
With the development of modern military, commercial communication technology, radio-frequency front-end transmitter also to double frequency-band even multifrequency mode,
High efficiency, high-gain, high-power output direction develop.Therefore under the urgent demand dual-frequency band operation mode in market, high efficiency,
High-gain, high-power power amplifier.However, always existing some set in the design of traditional high efficiency power amplifier
Problem is counted, is mainly reflected in dual-frequency band operation mode, high efficiency index mutually restricts: the high efficiency work in order to guarantee amplifier
Make, transistor will work under the mode of overdriving, and be similar to switch state, the reality of switch power amplifier but double frequency is overdrived
It is now always the technical bottleneck that circuit is realized.
The circuit structure of common high efficiency power amplifier has very much, most typically tradition AB class, C class, switching mode D
Class, E class, F power-like amplifier etc., still, these high-efficiency amplifiers still have some shortcomings, are mainly reflected in: tradition
Class ab ammplifier theoretical limit efficiency is 78.5%, relatively low, generally requires to sacrifice output Insertion Loss and efficiency to increase amplification
The bandwidth of device；C class A amplifier A limiting efficiency is 100%, but power output capacity is lower；Switching mode D class, E class, F class power
The needs such as amplifier rely on accurate harmonic impedance control or stringent impedance matching condition, these controls and condition are all big
Amplifier operation mode is limited greatly, considerably limits the design application of double frequency-band.In addition to this, existing high efficiency field-effect tube
Power amplifier is often based on what single common source transistors were realized, is limited by single transistor, power output capacity and
Power gain ability is all relatively low.
Utility model content
The purpose of this utility model is to propose that a kind of high-efficiency double-frequency F class based on accurate harmonic controling stacks power
Amplifier is realized under dual-frequency band operation mode efficiently using automatic biasing transistor stack technology and double frequency F class matching technique
Rate, high-gain, high-power output characteristic.
The technical solution of the utility model are as follows: a kind of high-efficiency double-frequency F class based on accurate harmonic controling stacks power and puts
Big device, including double frequency input fundamental wave matching network, two stacking automatic biasing power amplification networks, double frequency F class output matching network, grid
Pole power supply biasing networks and drain electrode power supply biasing networks；The input terminal that double frequency inputs fundamental wave matching network is entire high-efficiency double-frequency
F class stacks the input terminal of power amplifier, and output end is connect with the input terminal of two stacking automatic biasing power amplification networks；Double frequency
The output end of F class output matching network is the output end that entire high-efficiency double-frequency F class stacks power amplifier, input terminal and two
Stack the output end connection of automatic biasing power amplification network；Grid power supply biasing networks and double frequency input fundamental wave matching network connect
It connects, drain electrode power supply biasing networks are connect with two stacking automatic biasing power amplification networks and double frequency F class output matching network respectively.
The beneficial effects of the utility model are: the utility model uses the two stacked transistors structures based on self-bias structure,
And double frequency F class output matching network is combined, so that circuit has high efficiency, high-gain, Gao Gong under dual-frequency band operation mode
Rate fan-out capability.
It includes microstrip line TL that double frequency, which inputs fundamental wave matching network,1, microstrip line TL1One end be double frequency input fundamental wave pair net
The input terminal of network, the other end respectively with microstrip line TL2One end and microstrip line TL4One end connection, microstrip line TL2It is another
One end and open circuit microstrip line TL3Connection, microstrip line TL4The other end and capacitor C1One end connection, capacitor C1The other end difference
With microstrip line TL7One end and open circuit microstrip line TL5Connection, and the output end as double frequency input fundamental wave matching network, micro-strip
Line TL7The other end respectively with open circuit microstrip line TL6And grid power supply biasing networks connection.
The beneficial effect of above-mentioned further scheme is: the double frequency input fundamental wave matching network that the utility model uses can be real
Impedance matching now is carried out in two frequency bins to the fundamental signal of radio frequency input.
Two stacking automatic biasing power amplification networks include the top layer transistor Md for stacking and constituting that is connected according to source drain2
With bottom transistor Md1；Bottom transistor Md1Source electrode ground connection, grid and microstrip line TL9One end connection, microstrip line TL9
The other end be two stack automatic biasing power amplification networks input terminals；Top layer transistor Md2Drain electrode be two stack automatic biasings
The output end of power amplification network, grid and resistance R2One end connection, resistance R2The other end respectively with resistance R3One end
And ground capacity C4Connection, resistance R3The other end respectively with resistance R4One end and ground resistance R5Connection, resistance R4's
The other end is connect with drain electrode power supply biasing networks；Bottom transistor Md1Drain electrode and top layer transistor Md2Source electrode between pass through
Microstrip line TL10Connection, top layer transistor Md2Source electrode and microstrip line TL10Connecting node also with microstrip line TL11One end connect
It connects, microstrip line TL11The other end and ground capacity C3Connection.
The beneficial effect of above-mentioned further scheme is: the two stacking amplification networks that the core architecture of the utility model uses,
It can help existing high efficiency switch power amplifier hoisting power capacity and power gain.And the two of the utility model use
Stacking automatic biasing power amplification network joined automatic biasing structure, while not need additional piled grids bias voltage, significantly
Simplify the peripheral gates power supply structure of stacked structure.Microstrip line TL11And ground capacity C3For realizing high-efficiency double-frequency F class heap
Folded drain voltage waveform shaping of the power amplifier between transistor stack, so that amplifier switch is from " on " to the wink of " off "
Between, drain voltage is approximately zero；From " off " to the moment of " on ", the slope of drain voltage waveform is approximately zero.
Grid power supply biasing networks include microstrip line TL8, microstrip line TL8One end and microstrip line TL7Connection, the other end
Respectively with resistance R1One end, sector open-circuit line STUB1And ground capacity C2Connection, resistance R1The other end and low pressure bias
Power supply VG connection.
The beneficial effect of above-mentioned further scheme is: grid powers biasing networks can be to two stacking automatic biasing power amplifications
Bottom transistor Md in network1Play good grid power supply and bias.
Double frequency F class output matching network includes the microstrip line TL being sequentially connected in series12, microstrip line TL15, microstrip line TL18, micro-strip
Line TL23, microstrip line TL26And capacitor C10, microstrip line TL12Not connected microstrip line TL15One end be double frequency F class export pair net
The input terminal of network, capacitor C10Not connected microstrip line TL26One end be double frequency F class output matching network output end；Microstrip line
TL12With microstrip line TL15Connecting node also connect with the first LRC resonance circuit, microstrip line TL15With microstrip line TL18Connection section
Point is also connect with the 2nd LRC resonance circuit, microstrip line TL18With microstrip line TL23Connecting node also with microstrip line TL19One end
Connection, microstrip line TL19The other end respectively with the 3rd LRC resonance circuit and drain electrode power supply biasing networks connect, microstrip line
TL23With microstrip line TL26Connecting node also connect with the 4th LRC resonance circuit；First LRC resonance circuit includes being sequentially connected in series
Microstrip line TL13, the first RC parallel resonance unit and open circuit microstrip line TL14, microstrip line TL13It is connected to microstrip line TL12And micro-strip
Line TL15Connecting node, the first RC parallel resonance unit includes resistance R in parallel6With capacitor C5；2nd LRC resonance circuit packet
Include the microstrip line TL being sequentially connected in series16, the 2nd RC parallel resonance unit and open circuit microstrip line TL17, microstrip line TL16It is connected to micro-strip
Line TL15With microstrip line TL18Connecting node, the 2nd RC parallel resonance unit includes resistance R in parallel7With capacitor C6；3rd LRC
Resonance circuit includes the microstrip line TL being sequentially connected in series20, the 3rd RC parallel resonance unit and open circuit microstrip line TL21, microstrip line TL20
With microstrip line TL19Connection, the 3rd RC parallel resonance unit include resistance R in parallel8With capacitor C7；4th LRC resonance circuit packet
Include the microstrip line TL being sequentially connected in series24, the 4th RC parallel resonance unit and open circuit microstrip line TL25, microstrip line TL24It is connected to micro-strip
Line TL23With microstrip line TL26Connecting node, the 4th RC parallel resonance unit includes resistance R in parallel9With capacitor C9。
The beneficial effect of above-mentioned further scheme is: the output network of existing switch power amplifier is often directed to list
What the output impedance of frequency point narrowband was independently controlled, and the double frequency F class output matching network that the utility model is proposed uses
Double frequency F class matches framework, and circuit is allowed to realize the short circuit of F power-like amplifier second harmonic, triple-frequency harmonics in two frequency bins
The output impedance of open circuit, to realize the high efficiency index of double frequency.
Drain electrode power supply biasing networks include microstrip line TL22, microstrip line TL22One end and microstrip line TL19Connection, it is another
End respectively with resistance R4, sector open-circuit line STUB2, ground capacity C8And HVB high voltage bias power vd connection.
The beneficial effect of above-mentioned further scheme is: drain electrode power supply biasing networks can stack automatic biasing power amplification to two
Top layer transistor Md in network2Play good drain electrode power supply and bias.
Detailed description of the invention
Fig. 1 show a kind of high-efficiency double-frequency F class heap based on accurate harmonic controling provided by the embodiment of the utility model
Folded power amplifier functional block diagram.
Fig. 2 show a kind of high-efficiency double-frequency F class heap based on accurate harmonic controling provided by the embodiment of the utility model
Folded power amplifier circuit figure.
Specific embodiment
It is described in detail the illustrative embodiments of the utility model with reference to the drawings.It should be appreciated that showing in attached drawing
It is only exemplary out with the embodiment of description, it is intended that illustrate the principles of the present invention and spirit, and not limit this
The range of utility model.
The utility model embodiment provides a kind of high-efficiency double-frequency F class stacking power amplification based on accurate harmonic controling
Device, as shown in Figure 1, including double frequency input fundamental wave matching network, two stacking automatic biasing power amplification networks, the output of double frequency F class
Distribution network, grid power supply biasing networks and drain electrode power supply biasing networks；The input terminal that double frequency inputs fundamental wave matching network is entire
High-efficiency double-frequency F class stacks the input terminal of power amplifier, and output end and two stack the input of automatic biasing power amplification network
End connection；The output end of double frequency F class output matching network is the output end that entire high-efficiency double-frequency F class stacks power amplifier,
Its input terminal is connect with the output end of two stacking automatic biasing power amplification networks；Grid power supply biasing networks and double frequency input fundamental wave
Matching network connection, drain electrode power supply biasing networks stack automatic biasing power amplification network and the output of double frequency F class with two respectively
Distribution network connection.
As shown in Fig. 2, double frequency input fundamental wave matching network includes microstrip line TL1, microstrip line TL1One end be double frequency input
The input terminal of fundamental wave matching network, the other end respectively with microstrip line TL2One end and microstrip line TL4One end connection, micro-strip
Line TL2The other end and open circuit microstrip line TL3Connection, microstrip line TL4The other end and capacitor C1One end connection, capacitor C1It is another
One end respectively with microstrip line TL7One end and open circuit microstrip line TL5Connection, and as the defeated of double frequency input fundamental wave matching network
Outlet, microstrip line TL7The other end respectively with open circuit microstrip line TL6And grid power supply biasing networks connection.
Two stacking automatic biasing power amplification networks include the top layer transistor Md for stacking and constituting that is connected according to source drain2
With bottom transistor Md1；Bottom transistor Md1Source electrode ground connection, grid and microstrip line TL9One end connection, microstrip line TL9
The other end be two stack automatic biasing power amplification networks input terminals；Top layer transistor Md2Drain electrode be two stack automatic biasings
The output end of power amplification network, grid and resistance R2One end connection, resistance R2The other end respectively with resistance R3One end
And ground capacity C4Connection, resistance R3The other end respectively with resistance R4One end and ground resistance R5Connection, resistance R4's
The other end is connect with drain electrode power supply biasing networks；Bottom transistor Md1Drain electrode and top layer transistor Md2Source electrode between pass through
Microstrip line TL10Connection, top layer transistor Md2Source electrode and microstrip line TL10Connecting node also with microstrip line TL11One end connect
It connects, microstrip line TL11The other end and ground capacity C3Connection.
Grid power supply biasing networks include microstrip line TL8, microstrip line TL8One end and microstrip line TL7Connection, the other end
Respectively with resistance R1One end, sector open-circuit line STUB1And ground capacity C2Connection, resistance R1The other end and low pressure bias
Power supply VG connection.
Double frequency F class output matching network includes the microstrip line TL being sequentially connected in series12, microstrip line TL15, microstrip line TL18, micro-strip
Line TL23, microstrip line TL26And capacitor C10, microstrip line TL12Not connected microstrip line TL15One end be double frequency F class export pair net
The input terminal of network, capacitor C10Not connected microstrip line TL26One end be double frequency F class output matching network output end；Microstrip line
TL12With microstrip line TL15Connecting node also connect with the first LRC resonance circuit, microstrip line TL15With microstrip line TL18Connection section
Point is also connect with the 2nd LRC resonance circuit, microstrip line TL18With microstrip line TL23Connecting node also with microstrip line TL19One end
Connection, microstrip line TL19The other end respectively with the 3rd LRC resonance circuit and drain electrode power supply biasing networks connect, microstrip line
TL23With microstrip line TL26Connecting node also connect with the 4th LRC resonance circuit.
First LRC resonance circuit includes the microstrip line TL being sequentially connected in series13, the first RC parallel resonance unit and open circuit microstrip line
TL14, microstrip line TL13It is connected to microstrip line TL12With microstrip line TL15Connecting node, the first RC parallel resonance unit include parallel connection
Resistance R6With capacitor C5；2nd LRC resonance circuit includes the microstrip line TL being sequentially connected in series16, the 2nd RC parallel resonance unit and
Open a way microstrip line TL17, microstrip line TL16It is connected to microstrip line TL15With microstrip line TL18Connecting node, the 2nd RC parallel resonance list
Member includes resistance R in parallel7With capacitor C6；3rd LRC resonance circuit includes the microstrip line TL being sequentially connected in series20, the 3rd RC it is in parallel
Resonant element and open circuit microstrip line TL21, microstrip line TL20With microstrip line TL19Connection, the 3rd RC parallel resonance unit include parallel connection
Resistance R8With capacitor C7；4th LRC resonance circuit includes the microstrip line TL being sequentially connected in series24, the 4th RC parallel resonance unit and
Open a way microstrip line TL25, microstrip line TL24It is connected to microstrip line TL23With microstrip line TL26Connecting node, the 4th RC parallel resonance list
Member includes resistance R in parallel9With capacitor C9。
Drain electrode power supply biasing networks include microstrip line TL22, microstrip line TL22One end and microstrip line TL19Connection, it is another
End respectively with resistance R4, sector open-circuit line STUB2, ground capacity C8And HVB high voltage bias power vd connection.
It is introduced below with reference to concrete operating principle and process of the Fig. 2 to the utility model:
Radio frequency inputs fundamental signal and enters the double frequency input that high-efficiency double-frequency F class stacks power amplifier by input terminal IN
Fundamental wave matching network enters two after double frequency input fundamental wave matching network carries out impedance matching and stacks automatic biasing power amplification net
Network.Double frequency inputs in fundamental wave matching network, by microstrip line TL1~TL4The matching minor matters of composition can be realized the base to low frequency frequency point
Wave signal carries out impedance matching and control, by microstrip line TL5~TL7The matching minor matters of composition can be realized the base to high frequency frequency point
Wave signal carries out impedance matching and control, so that double frequency input fundamental wave matching network can realize fundamental wave letter in two frequency bins
Number impedance matching.
Two, which stack automatic biasing power amplification network, uses according to the connected transistor arrangement pair for stacking composition of source drain
Input signal amplifies, and can effectively promote power capacity and power gain that high-efficiency double-frequency F class stacks power amplifier.
It is stacked in automatic biasing power amplification network two simultaneously, by resistance R2, resistance R3, resistance R4, resistance R5With capacitor C4It collectively forms
Automatic biasing structure, therefore two stacking automatic biasing power amplification networks do not need additional piled grids bias voltage, it is significantly simple
The peripheral gates power supply structure of stacked structure is changed.In addition, microstrip line TL11And ground capacity C3For realizing high-efficiency double-frequency F
Class stacks drain voltage waveform shaping of the power amplifier between transistor stack, so that amplifier switch from " on " to " off "
Moment, drain voltage is approximately zero；From " off " to the moment of " on ", the slope of drain voltage waveform is approximately zero.
Enter double frequency F class output matching network through the two stacking amplified signals of automatic biasing power amplification network and carries out impedance
After matching, ultimately forms radio frequency output signal and reach output end OUT.Double frequency F class output matching network matches frame using double frequency F class
Structure allows circuit to realize the short circuit of F power-like amplifier second harmonic, the output resistance of triple-frequency harmonics open circuit in two frequency bins
It is anti-, to realize the high efficiency index of double frequency.Specifically, the first LRC resonance circuit and the 2nd LRC resonance circuit control respectively
The triple-frequency harmonics impedance of two frequency bins, so that triple-frequency harmonics is opened a way, the 3rd LRC resonance circuit controls the second harmonic of two frequency bins
Impedance, so that second harmonic is short-circuit, the 4th LRC resonance circuit controls the fundamental wave output impedance (impedance) of two frequency bins.
Grid powers biasing networks can be to the bottom transistor Md in two stacking automatic biasing power amplification networks1It plays good
Good grid power supply and bias；Drain electrode power supply biasing networks can stack the top layer in automatic biasing power amplification network to two
Transistor Md2Play good drain electrode power supply and bias.In addition, grid power supply biasing networks and drain electrode power supply biasing networks
In sector open-circuit line STUB is respectively adopted1With sector open-circuit line STUB2Instead of open circuit microstrip line as matching minor matters, bandwidth is wider,
It is more preferable to decouple effect.
In the utility model embodiment, the size of the size of transistor and other DC feedback resistance, compensating electric capacity is comprehensive
It is determined after the indices such as gain, bandwidth and the output power of the entire circuit of conjunction consideration, passes through the layout design and conjunction in later period
Required indices can be better achieved in removing the work office, realize high-gain under dual-frequency band operation mode, high power,
High efficiency and good input and output matching properties, chip area are small and at low cost.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this reality
With novel principle, it should be understood that the scope of the present invention is not limited to such specific embodiments and embodiments.
Those skilled in the art can be made according to the technical disclosures disclosed by the utility model it is various do not depart from it is practical
Novel substantive various other specific variations and combinations, these variations and combinations are still within the protection scope of the present invention.
Claims (6)
1. a kind of high-efficiency double-frequency F class based on accurate harmonic controling stacks power amplifier, which is characterized in that defeated including double frequency
Enter fundamental wave matching network, two stacking automatic biasing power amplification networks, double frequency F class output matching network, grid power supply biasing networks
With drain electrode power supply biasing networks；
The input terminal of the double frequency input fundamental wave matching network is that the entire high-efficiency double-frequency F class stacks the defeated of power amplifier
Enter end, output end is connect with the input terminal of two stacking automatic biasing power amplification networks；
The output end of the double frequency F class output matching network is that the entire high-efficiency double-frequency F class stacks the defeated of power amplifier
Outlet, input terminal are connect with the output end of two stacking automatic biasing power amplification networks；
Grid power supply biasing networks are connect with double frequency input fundamental wave matching network, the drain electrode power biasing networks respectively with
Two stack automatic biasing power amplification network and the connection of double frequency F class output matching network.
2. high-efficiency double-frequency F class according to claim 1 stacks power amplifier, which is characterized in that the double frequency input
Fundamental wave matching network includes microstrip line TL1, the microstrip line TL1One end be double frequency input fundamental wave matching network input terminal,
The other end respectively with microstrip line TL2One end and microstrip line TL4One end connection, the microstrip line TL2The other end and open circuit
Microstrip line TL3Connection, the microstrip line TL4The other end and capacitor C1One end connection, the capacitor C1The other end respectively with
Microstrip line TL7One end and open circuit microstrip line TL5Connection, and the output end as double frequency input fundamental wave matching network, it is described micro-
Band line TL7The other end respectively with open circuit microstrip line TL6And grid power supply biasing networks connection.
3. high-efficiency double-frequency F class according to claim 1 stacks power amplifier, which is characterized in that described two stack certainly
Bias power amplification network includes the top layer transistor Md for stacking and constituting that is connected according to source drain2With bottom transistor Md1；
The bottom transistor Md1Source electrode ground connection, grid and microstrip line TL9One end connection, the microstrip line TL9It is another
One end is two input terminals for stacking automatic biasing power amplification network；
The top layer transistor Md2Drain electrode be two output ends for stacking automatic biasing power amplification networks, grid and resistance R2's
One end connection, the resistance R2The other end respectively with resistance R3One end and ground capacity C4Connection, the resistance R3It is another
One end respectively with resistance R4One end and ground resistance R5Connection, the resistance R4The other end and drain electrode power supply biasing networks
Connection；
The bottom transistor Md1Drain electrode and top layer transistor Md2Source electrode between pass through microstrip line TL10Connection, the top layer
Transistor Md2Source electrode and microstrip line TL10Connecting node also with microstrip line TL11One end connection, the microstrip line TL11's
The other end and ground capacity C3Connection.
4. high-efficiency double-frequency F class according to claim 2 stacks power amplifier, which is characterized in that the grid power supply
Biasing networks include microstrip line TL8, the microstrip line TL8One end and microstrip line TL7Connection, the other end respectively with resistance R1
One end, sector open-circuit line STUB1And ground capacity C2Connection, the resistance R1The other end and low pressure bias supply VG connect
It connects.
5. high-efficiency double-frequency F class according to claim 3 stacks power amplifier, which is characterized in that the double frequency F class is defeated
Matching network includes the microstrip line TL being sequentially connected in series out12, microstrip line TL15, microstrip line TL18, microstrip line TL23, microstrip line TL26With
And capacitor C10, the microstrip line TL12Not connected microstrip line TL15One end be double frequency F class output matching network input terminal, institute
State capacitor C10Not connected microstrip line TL26One end be double frequency F class output matching network output end；
The microstrip line TL12With microstrip line TL15Connecting node also connect with the first LRC resonance circuit, the microstrip line TL15
With microstrip line TL18Connecting node also connect with the 2nd LRC resonance circuit, the microstrip line TL18With microstrip line TL23Connection
Node also with microstrip line TL19One end connection, the microstrip line TL19The other end respectively with the 3rd LRC resonance circuit and leakage
Pole power supply biasing networks connection, the microstrip line TL23With microstrip line TL26Connecting node also with the 4th LRC resonance circuit connect
It connects；
The first LRC resonance circuit includes the microstrip line TL being sequentially connected in series13, the first RC parallel resonance unit and open circuit microstrip line
TL14, the microstrip line TL13It is connected to microstrip line TL12With microstrip line TL15Connecting node, the first RC parallel resonance unit
Including resistance R in parallel6With capacitor C5；
The 2nd LRC resonance circuit includes the microstrip line TL being sequentially connected in series16, the 2nd RC parallel resonance unit and open circuit microstrip line
TL17, the microstrip line TL16It is connected to microstrip line TL15With microstrip line TL18Connecting node, the 2nd RC parallel resonance unit
Including resistance R in parallel7With capacitor C6；
The 3rd LRC resonance circuit includes the microstrip line TL being sequentially connected in series20, the 3rd RC parallel resonance unit and open circuit microstrip line
TL21, the microstrip line TL20With microstrip line TL19Connection, the 3rd RC parallel resonance unit include resistance R in parallel8And electricity
Hold C7；
The 4th LRC resonance circuit includes the microstrip line TL being sequentially connected in series24, the 4th RC parallel resonance unit and open circuit microstrip line
TL25, the microstrip line TL24It is connected to microstrip line TL23With microstrip line TL26Connecting node, the 4th RC parallel resonance unit
Including resistance R in parallel9With capacitor C9。
6. high-efficiency double-frequency F class according to claim 5 stacks power amplifier, which is characterized in that the drain electrode power supply
Biasing networks include microstrip line TL22, the microstrip line TL22One end and microstrip line TL19Connection, the other end respectively with resistance
R4, sector open-circuit line STUB2, ground capacity C8And HVB high voltage bias power vd connection.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821101284.3U CN208539858U (en) | 2018-07-11 | 2018-07-11 | A kind of high-efficiency double-frequency F class stacking power amplifier based on accurate harmonic controling |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821101284.3U CN208539858U (en) | 2018-07-11 | 2018-07-11 | A kind of high-efficiency double-frequency F class stacking power amplifier based on accurate harmonic controling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108768315A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling |
| CN112737530A (en) * | 2021-04-02 | 2021-04-30 | 成都理工大学 | Continuous class F amplifier |
-
2018
- 2018-07-11 CN CN201821101284.3U patent/CN208539858U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108768315A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling |
| CN112737530A (en) * | 2021-04-02 | 2021-04-30 | 成都理工大学 | Continuous class F amplifier |
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