CN208353298U - A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier - Google Patents
A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier Download PDFInfo
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- CN208353298U CN208353298U CN201821008465.1U CN201821008465U CN208353298U CN 208353298 U CN208353298 U CN 208353298U CN 201821008465 U CN201821008465 U CN 201821008465U CN 208353298 U CN208353298 U CN 208353298U
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Abstract
The utility model discloses a kind of low-power consumption High Linear double mode millimeter wave broadbands to stack low-noise amplifier, including two stack self-bias low noise amplification network, feedback bimodulus high linearity amplification network and biasing networks.The utility model realizes series stack structure using two various sizes of transistors, and combines automatic biasing technology and realize ultra wide band noise matching, impedance matching and low-power consumption；Meet the different use demands of user, and good broadband, gain, stationary wave characteristic are obtained in entire working band so that circuit has the switching capability under high linearity or low-power consumption both of which using feedback bimodulus switching construction simultaneously.
Description
Technical field
The utility model belongs to field effect transistor radio frequency low-noise amplifier and technical field of integrated circuits, and in particular to
A kind of low-power consumption High Linear double mode millimeter wave broadband stacks the design of low-noise amplifier.
Background technique
As broadband connections, radar etc. are military, fast development of commercial market, radio-frequency front-end receiver also to high-performance,
Highly integrated, low-power consumption direction is developed, therefore the urgent demand ultra wide band in market, high-gain, high linearity, low-power consumption, low noise
The millimeter wave the low noise amplifier chip of sound, and circuit supports the switching for having under high linearity or low-power consumption both of which
Ability.
However, always existing some design challenges, major embodiment when in traditional millimeter wave the low noise amplifier chip design
It mutually restricts index in low-power consumption, low noise index and high linearity index mutually to restrict: the low noise in order to guarantee amplifier
Work, the drain voltage of transistor is more slightly lower than normal working voltage, so that transistor works in optimal noise operation point, still
Drain voltage, which reduces, brings the voltage swing of transistor to reduce to greatly limit high linearity index, and which results in the two
Mutually restrict.
The circuit structure of common low-power consumption, High-linearity low-noise amplifier has very much, most typically current multiplexing
Formula common source (or cascode) amplifier, still, exemplary currents multiplexing type common source (or cascode) amplifier, however it remains some designs are not
Foot, is mainly reflected in:
(1) current multiplexing structure needs to realize the quiet of two common source (or cascode) amplifiers using feed inductance and bulky capacitor
The self-resonant frequency point of state biasing multiplexing, this big inductance and bulky capacitor feed structure is lower, when realization ultra wide band amplifies
It waits, it is possible to which self-resonant frequency point can be fallen into amplification band, to deteriorate radiofrequency characteristics；Big inductance and capacitor often account for simultaneously
With biggish chip area, to improve chip cost.
(2) current multiplexing structure often uses fixed AB class bias state in order to obtain high-gain and low-noise factor,
Low-power consumption can not still be well solved and intrinsic problem that high linearity index mutually restricts, it also can not be in low-power consumption and High Linear
Mutually switch between degree index.
Utility model content
The purpose of this utility model is to propose that a kind of low-power consumption High Linear double mode millimeter wave broadband stacks low noise amplification
Device realizes low-power consumption, high-gain, height under ultra wide band using automatic biasing transistor stack technology and feedback bimodulus handoff technique
The linearity, low noise and good input and output matching properties, and have under high linearity or low-power consumption both of which
Switching capability.
A kind of the technical solution of the utility model are as follows: low-power consumption High Linear double mode millimeter wave broadband stacking low noise amplification
Device, including two stack self-bias low noise amplification network, feedback bimodulus high linearity amplifies network and biasing networks；Two stack certainly
The input terminal of inclined low noise amplification network is the input terminal of entire low-noise amplifier, output end and feedback bimodulus high linearity
Amplify the input terminal connection of network；The output end for feeding back bimodulus high linearity amplification network is the output of entire low-noise amplifier
End；Biasing networks stack self-bias low noise amplification network with two respectively and feedback bimodulus high linearity amplification is connected to the network；Instead
Feedback bimodulus high linearity amplification network is also connected to ground.
The beneficial effects of the utility model are: the utility model is using the advantage of two stacking self-bias low noise amplification networks
Low-power consumption, high-gain, good input and output matching, while not needing additional gate bias voltage；In combination with feedback
Bimodulus high linearity amplifies network, designs second level amplifier using feedback technique and self-bias common-source amplifier, bimodulus control is added
Interface processed, so that amplifier has the switching capability under high linearity and low-power consumption both of which.
Further, two stacking self-bias low noise amplification networks include the top layer for stacking and constituting that is connected according to source drain
Transistor Md2With bottom transistor Md1；Top layer transistor Md2With bottom transistor Md1Size is different；Bottom transistor Md1Source
Pole passes through microstrip line TL5It is connect with one end of positive voltage self-bias RC circuit, the other end ground connection of positive voltage self-bias RC circuit；Bottom
Transistor Md1Grid be sequentially connected in series microstrip line TL4, microstrip line TL2And capacitance C1Self-bias low noise is stacked as two afterwards
Amplify the input terminal of network, microstrip line TL2With capacitance C1Connecting node on be also connected with open circuit microstrip line TL1, microstrip line
TL4With microstrip line TL2Connecting node also pass through microstrip line TL3It is connect with one end of the first no-voltage control RC circuit, the 1st
Voltage controls the other end ground connection of RC circuit；Bottom transistor Md1Drain electrode pass through microstrip line TL6With top layer transistor Md2Source
Pole connection；Top layer transistor Md2Grid connect respectively with biasing networks and grid compensation circuit, drain electrode connection microstrip line
TL7One end, microstrip line TL7The other end be two stack self-bias low noise amplification networks output ends, two stack self-bias low noises
The output end of amplification network also passes through microstrip line TL8It is connect with biasing networks；Positive voltage self-bias RC circuit includes resistance R in parallel2
With capacitor C3, the first no-voltage control RC circuit includes resistance R in parallel1With capacitor C2, grid compensation circuit includes concatenated grid
Extremely stable resistance R3With compensation of ground capacitor C4。
The beneficial effect of above-mentioned further scheme is: the two stacking self-bias low noise amplification networks that the utility model uses are adopted
Realize series stack structures with two various sizes of transistors, and combine automatic biasing technology realize ultra wide band noise matching,
Impedance matching and low-power consumption；In addition, the two of the utility model use stack from relatively low compared with conventional two stack amplifier network
Noise amplification network joined automatic biasing structure, and input biasing circuit with RC necessary to automatic biasing structure, be formed in parallel
To the circuit on ground, low-power consumption, high-gain, good input and output matching can be obtained, while not needing additional gate bias
Voltage enormously simplifies peripheral gates power supply structure.
Further, feedback bimodulus high linearity amplification network includes transistor Md3, transistor Md3Source electrode connect micro-strip
Line TL11One end, microstrip line TL11The other end respectively with resistance R9One end and ground capacity C8Connection, resistance R9It is another
One end as feedback bimodulus high linearity amplification network HLI interface, and with resistance R10One end connection, resistance R10It is another
Hold the LDC interface as feedback bimodulus high linearity amplification network；At least one ground connection of HLI interface and LDC interface；Transistor
Md3Grid be sequentially connected in series microstrip line TL10With capacitor C5Input terminal as feedback bimodulus high linearity amplification network afterwards, micro-strip
Line TL10With capacitor C5Connecting node also respectively with microstrip line TL9One end and microstrip line TL12One end connection, microstrip line
TL9One end of the other end and the second no-voltage control RC circuit connect, the other end that the second no-voltage controls RC circuit is grounded；
Transistor Md3Grid drain electrode be sequentially connected in series microstrip line TL13, microstrip line TL15With capacitor C11Afterwards as feedback bimodulus high linearity
Amplify the output end of network, microstrip line TL13With microstrip line TL15Connecting node also respectively with microstrip line TL14One end and electricity
Hinder R8One end connection, microstrip line TL14The other end connect with biasing networks, resistance R8The other end pass through capacitor C7With micro-strip
Line TL12The other end connection；Second no-voltage control RC circuit includes resistance R in parallel7With capacitor C6, feed back bimodulus High Linear
The output end of degree amplification network is also connected with open circuit microstrip line TL16。
The beneficial effect of above-mentioned further scheme is: in existing low-power consumption, High-linearity low-noise amplifier, the second level
Amplifier often realizes high linearity index using traditional common-source amplifier, or low function is realized using current multiplexing structure
Index is consumed, the feedback bimodulus high linearity amplification network architecture that the utility model is proposed makes circuit can have high linearity
With the switching capability under low-power consumption both of which, two kinds of circuit functions are combined, the working condition of amplifier is enriched.
Further, biasing networks include resistance R4, resistance R5With resistance R6, resistance R5One end ground connection, the other end point
Not with resistance R4One end and resistance R6One end connection, resistance R6The other end and top layer transistor Md2Grid connection,
Resistance R4The other end respectively with microstrip line TL8, microstrip line TL14, ground capacity C9, ground capacity C10And HVB high voltage bias power supply
VDD connection.
The beneficial effect of above-mentioned further scheme is: the biasing networks of the utility model can stack self-bias low noise to two
Amplify the top layer transistor Md in network2Grid and drain electrode bias are played, while can also be to feedback bimodulus high linearity
Amplify the transistor Md in network3Play drain electrode bias.
Detailed description of the invention
It is low that Fig. 1 show a kind of low-power consumption High Linear double mode millimeter wave broadband stacking provided by the embodiment of the utility model
Noise amplifier functional block diagram.
It is low that Fig. 2 show a kind of low-power consumption High Linear double mode millimeter wave broadband stacking provided by the embodiment of the utility model
Noise amplifier circuit figure.
Specific embodiment
It is described in detail the illustrative embodiments of the utility model with reference to the drawings.It should be appreciated that showing in attached drawing
It is only exemplary out with the embodiment of description, it is intended that illustrate the principles of the present invention and spirit, and not limit this
The range of utility model.
The utility model embodiment provides a kind of low-power consumption High Linear double mode millimeter wave broadband stacking low noise amplification
Device, as shown in Figure 1, including two stacking self-bias low noise amplification networks, feedback bimodulus high linearity amplification network and biasing net
Network；Two input terminals for stacking self-bias low noise amplification network are the input terminal of entire low-noise amplifier, output end and feedback
Bimodulus high linearity amplifies the input terminal connection of network；The output end for feeding back bimodulus high linearity amplification network is entire low noise
The output end of amplifier；Biasing networks stack self-bias low noise amplification network and feedback bimodulus high linearity amplification with two respectively
Network connection；Feedback bimodulus high linearity amplification network is also connected to ground.
As shown in Fig. 2, two stacking self-bias low noise amplification networks include the top layer for stacking and constituting that is connected according to source drain
Transistor Md2With bottom transistor Md1；Top layer transistor Md2With bottom transistor Md1Size is different；Bottom transistor Md1Source
Pole passes through microstrip line TL5It is connect with one end of positive voltage self-bias RC circuit, the other end ground connection of positive voltage self-bias RC circuit；Bottom
Transistor Md1Grid be sequentially connected in series microstrip line TL4, microstrip line TL2And capacitance C1Self-bias low noise is stacked as two afterwards
Amplify the input terminal of network, microstrip line TL2With capacitance C1Connecting node on be also connected with open circuit microstrip line TL1, microstrip line
TL4With microstrip line TL2Connecting node also pass through microstrip line TL3It is connect with one end of the first no-voltage control RC circuit, the 1st
Voltage controls the other end ground connection of RC circuit；Bottom transistor Md1Drain electrode pass through microstrip line TL6With top layer transistor Md2Source
Pole connection；Top layer transistor Md2Grid connect respectively with biasing networks and grid compensation circuit, drain electrode connection microstrip line
TL7One end, microstrip line TL7The other end be two stack self-bias low noise amplification networks output ends, two stack self-bias low noises
The output end of amplification network also passes through microstrip line TL8It is connect with biasing networks；Positive voltage self-bias RC circuit includes resistance R in parallel2
With capacitor C3, the first no-voltage control RC circuit includes resistance R in parallel1With capacitor C2, grid compensation circuit includes concatenated grid
Extremely stable resistance R3With compensation of ground capacitor C4。
Feeding back bimodulus high linearity amplification network includes transistor Md3, transistor Md3Source electrode connect microstrip line TL11's
One end, microstrip line TL11The other end respectively with resistance R9One end and ground capacity C8Connection, resistance R9Other end conduct
Feed back bimodulus high linearity amplification network HLI interface, and with resistance R10One end connection, resistance R10The other end as anti-
Present the LDC interface of bimodulus high linearity amplification network；At least one ground connection of HLI interface and LDC interface；Transistor Md3Grid
It is sequentially connected in series microstrip line TL10With capacitor C5Input terminal as feedback bimodulus high linearity amplification network afterwards, microstrip line TL10And electricity
Hold C5Connecting node also respectively with microstrip line TL9One end and microstrip line TL12One end connection, microstrip line TL9The other end
It is connect with one end of the second no-voltage control RC circuit, the second no-voltage controls the other end ground connection of RC circuit；Transistor Md3's
Grid drain electrode is sequentially connected in series microstrip line TL13, microstrip line TL15With capacitor C11Afterwards as feedback bimodulus high linearity amplification network
Output end, microstrip line TL13With microstrip line TL15Connecting node also respectively with microstrip line TL14One end and resistance R8One end
Connection, microstrip line TL14The other end connect with biasing networks, resistance R8The other end pass through capacitor C7With microstrip line TL12It is another
One end connection；Second no-voltage control RC circuit includes resistance R in parallel7With capacitor C6, feedback bimodulus high linearity amplification network
Output end be also connected with open circuit microstrip line TL16。
Biasing networks include resistance R4, resistance R5With resistance R6, resistance R5One end ground connection, the other end respectively with resistance R4
One end and resistance R6One end connection, resistance R6The other end and top layer transistor Md2Grid connection, resistance R4It is another
One end respectively with microstrip line TL8, microstrip line TL14, ground capacity C9, ground capacity C10And HVB high voltage bias power vd D connection.
It is introduced below with reference to concrete operating principle and process of the Fig. 2 to the utility model:
Radio-frequency input signals enters low-power consumption High Linear double mode millimeter wave broadband stacking low noise by input terminal IN and puts
Big device is formed after two stacking self-bias low noise amplification networks and feedback bimodulus high linearity amplification network carry out two-stage amplification and is penetrated
Frequency output signal reaches output end OUT.
The utility model stacks core architecture of the self-bias low noise amplification network as first order amplifier using two, passes through
Using two various sizes of transistor Md1And Md2It realizes series stack structure, and combines automatic biasing technology and realize ultra wide band
Noise matching, impedance matching and low-power consumption, compared with conventional two stack amplifier network, using simultaneously in the utility model embodiment
The resistance R of connection2With capacitor C3Constitute positive voltage self-bias RC circuit, R2Bottom transistor Md is controlled as self-bias resistance1Source electrode be
Positive voltage, C3Contain R as shunt capacitance2The noise of generation simultaneously improves wide-band impedance matching；The utility model uses simultaneously
Resistance R in parallel1With capacitor C2The first no-voltage control RC circuit is constituted, by bottom transistor Md1Gate bias to ground, because
This two stackings self-bias low noise amplification network provided by the utility model does not need additional gate bias voltage, enormously simplifies
Peripheral gates power supply structure.
Core architecture of the utility model using feedback bimodulus high linearity amplification network as second level amplifier, utilizes
Feedback technique (passes through resistance R8, capacitor C7With microstrip line TL12It is connected on transistor Md3RLC feedback is constituted between grid and drain electrode
Circuit) and self-bias common-source amplifier (resistance R9Or R10When any one is connected to ground, with capacitor C8The shunt circuit RC is constituted,
Realize self-bias common source) design second level amplifier, bi-mode control interface, when HLI interface independent grounding, amplifier operation is added
In high linearity mode, when LDC interface independent grounding or two interfaces are grounded jointly, amplifier operation in low-power consumption mode,
Make amplifier that there is the switching capability under high linearity and low-power consumption both of which in this way, combine two kinds of circuit functions,
Enrich the working condition of amplifier.The utility model also uses resistance R in parallel simultaneously7With capacitor C6Constitute the second no-voltage
RC circuit is controlled, by transistor Md3Gate bias to ground.
Biasing networks can stack the top layer transistor Md in self-bias low noise amplification network to two2Play grid and drain electrode
Bias, while can also be to the transistor Md in feedback bimodulus high linearity amplification network3Play drain electrode bias.
In the utility model embodiment, the size of transistor and other DC feedback resistance, compensating electric capacity, feedback device
Size is determined after the indices such as the gain for comprehensively considering entire circuit, bandwidth and output power, and the domain in later period is passed through
Required indices can be better achieved in design and rational deployment, realize low noise, Gao Zeng under the conditions of ultra wide band
Benefit, high linearity and good input and output matching properties realize that chip area is small and at low cost.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this reality
With novel principle, it should be understood that the scope of the present invention is not limited to such specific embodiments and embodiments.
Those skilled in the art can be made according to the technical disclosures disclosed by the utility model it is various do not depart from it is practical
Novel substantive various other specific variations and combinations, these variations and combinations are still within the protection scope of the present invention.
Claims (4)
1. a kind of low-power consumption High Linear double mode millimeter wave broadband stacks low-noise amplifier, which is characterized in that stacked including two
Self-bias low noise amplification network, feedback bimodulus high linearity amplification network and biasing networks；
Described two stack the input terminal of self-bias low noise amplification network as the input terminal of the entire low-noise amplifier, output
It holds and is connect with the input terminal of feedback bimodulus high linearity amplification network；
The output end of the feedback bimodulus high linearity amplification network is the output end of the entire low-noise amplifier；
The biasing networks stack self-bias low noise amplification network with two respectively and feedback bimodulus high linearity amplification network connects
It connects；
The feedback bimodulus high linearity amplification network is also connected to ground.
2. low-power consumption High Linear double mode millimeter wave broadband according to claim 1 stacks low-noise amplifier, feature
It is, the two stackings self-bias low noise amplification network includes the top layer transistor Md for stacking and constituting that is connected according to source drain2
With bottom transistor Md1；The top layer transistor Md2With bottom transistor Md1Size is different；
The bottom transistor Md1Source electrode pass through microstrip line TL5It is connect with one end of positive voltage self-bias RC circuit, the positive electricity
Press the other end ground connection of self-bias RC circuit；
The bottom transistor Md1Grid be sequentially connected in series microstrip line TL4, microstrip line TL2And capacitance C1It is used as two heaps afterwards
The input terminal of folded self-bias low noise amplification network, the microstrip line TL2With capacitance C1Connecting node on be also connected with open circuit
Microstrip line TL1, the microstrip line TL4With microstrip line TL2Connecting node also pass through microstrip line TL3RC is controlled with the first no-voltage
One end of circuit connects, the other end ground connection of the first no-voltage control RC circuit；
The bottom transistor Md1Drain electrode pass through microstrip line TL6With top layer transistor Md2Source electrode connection；
The top layer transistor Md2Grid connect respectively with biasing networks and grid compensation circuit, drain electrode connection microstrip line
TL7One end, the microstrip line TL7The other end be two stack self-bias low noise amplification networks output ends, it is described two stack from
The output end of inclined low noise amplification network also passes through microstrip line TL8It is connect with biasing networks；
The positive voltage self-bias RC circuit includes resistance R in parallel2With capacitor C3, first no-voltage control RC circuit includes
Resistance R in parallel1With capacitor C2, the grid compensation circuit includes concatenated grid steady resistance R3With compensation of ground capacitor C4。
3. low-power consumption High Linear double mode millimeter wave broadband according to claim 2 stacks low-noise amplifier, feature
It is, the feedback bimodulus high linearity amplification network includes transistor Md3, the transistor Md3Source electrode connect microstrip line
TL11One end, the microstrip line TL11The other end respectively with resistance R9One end and ground capacity C8Connection, the resistance
R9The other end as feedback bimodulus high linearity amplification network HLI interface, and with resistance R10One end connection, the resistance
R10The other end as feedback bimodulus high linearity amplification network LDC interface；The HLI interface and LDC interface at least one
Ground connection；
The transistor Md3Grid be sequentially connected in series microstrip line TL10With capacitor C5Amplify network as feedback bimodulus high linearity afterwards
Input terminal, the microstrip line TL10With capacitor C5Connecting node also respectively with microstrip line TL9One end and microstrip line TL12
One end connection, the microstrip line TL9One end of the other end and the second no-voltage control RC circuit connect, the described 2nd 0 is electric
The other end of voltage-controlled RC circuit processed is grounded；
The transistor Md3Grid drain electrode be sequentially connected in series microstrip line TL13, microstrip line TL15With capacitor C11Afterwards as feedback bimodulus
High linearity amplifies the output end of network, the microstrip line TL13With microstrip line TL15Connecting node also respectively with microstrip line TL14
One end and resistance R8One end connection, the microstrip line TL14The other end connect with biasing networks, the resistance R8It is another
One end passes through capacitor C7With microstrip line TL12The other end connection；
The second no-voltage control RC circuit includes resistance R in parallel7With capacitor C6, the feedback bimodulus high linearity amplification
The output end of network is also connected with open circuit microstrip line TL16。
4. low-power consumption High Linear double mode millimeter wave broadband according to claim 3 stacks low-noise amplifier, feature
It is, the biasing networks include resistance R4, resistance R5With resistance R6, the resistance R5One end ground connection, the other end respectively with
Resistance R4One end and resistance R6One end connection, the resistance R6The other end and top layer transistor Md2Grid connection,
The resistance R4The other end respectively with microstrip line TL8, microstrip line TL14, ground capacity C9, ground capacity C10And HVB high voltage bias
Power vd D connection.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821008465.1U CN208353298U (en) | 2018-06-27 | 2018-06-27 | A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821008465.1U CN208353298U (en) | 2018-06-27 | 2018-06-27 | A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier |
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| CN208353298U true CN208353298U (en) | 2019-01-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574464A (en) * | 2018-06-27 | 2018-09-25 | 成都嘉纳海威科技有限责任公司 | A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier |
| CN113098403A (en) * | 2021-03-31 | 2021-07-09 | 南京米乐为微电子科技有限公司 | Ultra-wideband low-current drive amplifier based on GaAs pHEMT process |
-
2018
- 2018-06-27 CN CN201821008465.1U patent/CN208353298U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574464A (en) * | 2018-06-27 | 2018-09-25 | 成都嘉纳海威科技有限责任公司 | A kind of low-power consumption High Linear double mode millimeter wave broadband stacking low-noise amplifier |
| CN108574464B (en) * | 2018-06-27 | 2023-10-27 | 成都嘉纳海威科技有限责任公司 | Low-power-consumption high-linearity dual-mode millimeter wave broadband stacked low-noise amplifier |
| CN113098403A (en) * | 2021-03-31 | 2021-07-09 | 南京米乐为微电子科技有限公司 | Ultra-wideband low-current drive amplifier based on GaAs pHEMT process |
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