CN208336037U - A kind of thin film switch and its device for preparing thin film switch - Google Patents
A kind of thin film switch and its device for preparing thin film switch Download PDFInfo
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- CN208336037U CN208336037U CN201820803127.0U CN201820803127U CN208336037U CN 208336037 U CN208336037 U CN 208336037U CN 201820803127 U CN201820803127 U CN 201820803127U CN 208336037 U CN208336037 U CN 208336037U
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- film switch
- thin film
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Abstract
The utility model relates to a kind of thin film switch and its prepare the device of thin film switch.The device includes metal material magazine, and top has injection hole and vacuum pressure hole, and inside has stirring sheet and thermally conductive vibrating plate, can accommodate low-melting point metal alloy in cavity；Pen tube, positioned at the lower part of the metal material magazine, and its inner cavity is communicated with the metal material magazine；Ball moves up and down at the lower openings of the pen tube, and here；Substrate and warm table, the substrate are located at the upper surface of the warm table.Using the device prepare thin film switch, the production contamination-free of the raw material of use, and cost compared with the prior art in conductive silver paste it is lower, and the thin film switch production method customize it is at low cost.
Description
Technical field
The utility model relates to a kind of thin film switch and its prepare the device of the thin film switch.
Background technique
Conductive raw material are substantially based on conductive silver paste in the thin film switch of the prior art, and conductive silver paste is in production process
In can generate a certain amount of nitrate and volatilizable organic solvent, nitrate and volatilizable organic solvent have certain poison
Property, especially nitrate is one of the primary pollution source of current threatening environment, and on the other hand, conductive silver paste is expensive, very high
It is expensive.
In addition, the thin film switch of the prior art is generally carried out by screen printing mode, silk screen for from manufacturing process
Mode of printing need to have drawing, stretching, photoetching, wash net and etc., operate it is complicated, customize high production cost.
Summary of the invention
The utility model provides a kind of thin film switch, utilizes one or more of gallium, indium, tin, bismuth, silver, zinc, antimony
Form the contact point of 120 DEG C of fusing point low-melting point metal alloy production thin film switches below, preparation dress provided by the utility model
It include the structure for producing the metal material magazine of low-melting point metal alloy in setting, which can be used for 120 DEG C or less
Low-melting point metal alloy mixing and produce.
A kind of device preparing thin film switch comprising metal material magazine, top have injection hole and vacuum pressure hole,
Have stirring sheet and thermally conductive vibrating plate inside the metal material magazine, accommodates low-melting-point metal in the metal material magazine cavity and close
Gold；Pen tube, positioned at the lower part of the metal material magazine, and the pen tube inner cavity is communicated with the metal material magazine；Ball is located at
At the lower openings of the pen tube, and moved up and down at the lower openings；Substrate and warm table, the substrate are located at described
The upper surface of warm table.
A kind of thin film switch prepared using the device, the film switch circuit being oppositely arranged including two, and
Between the film switch circuit, the separation layer of two film switch circuits of connection；Wherein, each film is opened
Powered-down road is made of substrate and the metal layer in substrate respectively, and the metal layer of two film switch circuits is opposite to be set
It sets, and compaction cavum is formed by the separation layer；When the compaction cavum is squeezed by a degree of external force, two institutes
The metal layer for stating film switch circuit connects.
Further, the separation layer is super soft silicone gel, and the substrate is PET material.
Compared with prior art, the utility model has the advantage that
1, the production contamination-free of the raw material used in the thin film switch of the utility model, and cost compares conductive silver paste
It is lower.
2, the production method customization of thin film switch is at low cost in the utility model.
Detailed description of the invention
Attached drawing 1 show the device that thin film switch is prepared described in the utility model embodiment.
Attached drawing 2 show thin film switch structure made of thin film switch preparation facilities and method using the utility model and shows
It is intended to.
Attached drawing 3 show the device that the utility model another kind prepares thin film switch
Appended drawing reference: 1- metal layer；2- substrate；3- separation layer；4- stirring sheet；The thermally conductive vibrating plate of 5-；6- low-melting-point metal
Alloy；7- ball；8- injection hole；9- vacuum pressure hole；10- pen tube；11- warm table；12- silk screen scraper；13- silk screen；A- gold
Belong to material cartridge.
Specific embodiment
As shown in Figure 1, the device for preparing thin film switch of the utility model, including metal material magazine A, top have note
Enter hole 8 and vacuum pressure hole 9, inside has stirring sheet 4 and thermally conductive vibrating plate 5, can accommodate low melting point in metal material magazine A cavity
Metal alloy 6；Pen tube 10, positioned at the lower part of the metal material magazine A, and its inner cavity is communicated with the metal material magazine A；Ball
7, at the lower openings of the pen tube 10, and move up and down here；Substrate 2 and warm table 11, the substrate 2 are located at
The upper surface of the warm table 11.
As shown in Fig. 2, the thin film switch prepared by above-mentioned apparatus, including metal layer 1, substrate 2 and separation layer 3.
Wherein, the separation layer 3 is super soft silicone gel, and the substrate 2 is PET material.
The position where thin film switch metal layer 1 is pressed, the separation layer 3 that super soft silicone gel is formed compresses, thin film switch metal
About 1 layer attaches, and forms conducting, generates the effect of switch.
Using above-mentioned apparatus, can be used to prepare thin film switch, the specific steps are as follows:
Step (1): the low-melting point metal alloy 6 is placed in the metal material magazine A,
Step (2): by 9 gas bleeding of vacuum pressure hole so as to form negative pressure in the metal material magazine A；
Step (3): the ball 7 is retracted after contacting with the substrate 2 in the pen tube 10, the low-melting point metal alloy
6 gently overflow the pen tube 10 under self weight and the comprehensive function of negative pressure, and printing is deposited in the substrate 2；
Step (4): the substrate 2 is placed on always on the warm table 11, and the temperature of the warm table 11 is consistently higher than
The fusing point of the low-melting point metal alloy 6；
Step (5): after the completion of printing, the warm table 11 stops heating, the eutectic being printed upon in the substrate 2
Point 6 cooling solidification of metal alloy, forms film switch circuit.
In above-mentioned steps (3), low-melting point metal alloy 6 due to self gravity can spontaneous spilling pen tube 10, and metal from
Weight is very big, and it is excessive that spontaneous spilling will lead to spill-out, so, after extracting negative pressure using vacuum pressure hole 9, atmospheric pressure can press down
The gravity of low-melting point metal alloy 6 processed is to form a kind of balance of power, under this comprehensive function, low-melting point metal alloy 6
It is gentle to overflow.
The effect of warm table 11 has following two points: metal can cause under heat effect in Self-leveling under melting situation
Route is more smooth after printing；Warming thermal plastic more preferable, the stiffness that will lead to metal adhesive force on substrate is carried out after the completion of printing
More preferably.
The low-melting point metal alloy 6 is prepared using described device before step (1), further includes following steps:
Step a. is implanted sequentially in the metal material magazine A after melting raw material by the injection hole 8, the former material
Material is one or more of gallium, indium, tin, bismuth, silver, zinc, antimony；
Step b. is by the vacuum pressure hole 9 by the metal material magazine A vacuum state；
Thermally conductive vibrating plate 5 described in step c. is heated and is shaken to the metal material magazine A, 4 pairs of institutes of the stirring sheet
State the stirring that raw material carry out 20 minutes；
Step d. obtains the low-melting point metal alloy 6.
The thin film switch is prepared after abovementioned steps (5), further includes following steps:
It is attached mutually after the film switch circuit of two mirror printeds is used 3 sealing of separation layer, after attaching
The film switch circuit puts baking oven into, and heating causes separation layer 3 mutually to merge, forms the thin film switch.
Further, the metal material magazine A, which is fixed on horizontal two-dimension guide rail, realizes horizontal movement, is adsorbed with electromagnet
The metal material magazine A realizes vertical movement.
Further, the stirring sheet 4 is magnet, and lasting rotation generates the magnetic field of rotation during the preparation process, so that institute
State the continuous cutting magnetic induction line of the low-melting point metal alloy 6 in metal material magazine A, auxiliary stirring；The thermally conductive vibration simultaneously
5 continuous vibration of piece carries out concussion stirring to the low-melting point metal alloy 6 in the metal material magazine A.
Further, the horizontal two-dimension guide rail and the electromagnet drive the movement of the metal material magazine A, and
The vacuum pressure hole 9 manipulates the pumping negative pressure of the metal material magazine A by Add-In.
Further, the method can carry out repacking realization on any 3D printer containing two-dimentional guide rail.
As shown in figure 3, the thin film switch of the utility model can also be prepared by screen printing mode, the specific method is as follows:
Step (1): substrate 2 is placed on warm table 11 and is operated；
Step (2): low-melting point metal alloy is uniformly applied on silk screen 13 with silk screen scraper 12；
Step (3): the low-melting point metal alloy is adhered in the substrate 2 by the slit of the silk screen 13, is formed
Figure；
Step (4): after the completion of silk-screen, the warm table 11 stops heating, the low melting point of the silk-screen in the substrate 2
Metal alloy cooling solidification forms film switch circuit.
Above-mentioned low-melting point metal alloy can be prepared in advance before the step (1), by by gallium, indium, bismuth, tin, antimony,
One or more of zinc, silver, zinc, which are put together, carries out heating melting, and six ten minutes later, then carries out 15 minutes magnetic to alloy
Stirring obtains the low-melting point metal alloy during which without oxygen barrier.
(4) are made after film switch circuit through the above steps, i.e., prepare using film switch circuit obtained thin
Membrane switch, by being attached mutually after the film switch circuit of two mirror printeds is used 3 sealing of separation layer, after attaching
The film switch circuit put baking oven into, heating causes separation layer 3 mutually to merge, and can form the thin film switch.
Correspondingly, the invention also discloses the device for preparing thin film switch using above-mentioned preparation method, the device packet
Include the components such as silk screen scraper 12, silk screen 13, substrate 2 and warm table 11；It prepares low-melting point metal alloy and is located at 12 He of scraper
It is fed between the silk screen 13, the low-melting point metal alloy passes through the silk screen 13 under the action of scraper 12
Slit is adhered in the substrate 2 of 13 lower section of silk screen, and the substrate 2 is located at the upper surface of the warm table 11.
Further, the low-melting point metal alloy be a kind of thick liquid metal alloy, specially by gallium, indium,
One or more of bismuth, tin, antimony, zinc, silver, zinc are put together the low-melting alloy for carrying out being formed after heating melting, especially may be used
Think 120 DEG C of red brass etc. metals and alloy below.
Further, the silk screen 13 is the silk screen that photoetching process obtains, and silk screen size is any of 80 mesh into 120 mesh
Kind.
Claims (3)
1. a kind of device for preparing thin film switch, it is characterised in that:
Including metal material magazine (A), top has injection hole (8) and vacuum pressure hole (9), and the metal material magazine (A) is interior
Portion has stirring sheet (4) and thermally conductive vibrating plate (5), accommodates low-melting point metal alloy (6) in metal material magazine (A) cavity；
Pen tube (10) is located at the lower part of the metal material magazine (A), and the pen tube (10) inner cavity and the metal material magazine
(A) it communicates；
Ball (7) is located at the lower openings of the pen tube (10), and moves up and down at the lower openings；
Substrate (2) and warm table (11), the substrate (2) are located at the upper surface of the warm table (11).
2. a kind of thin film switch prepared using device as described in claim 1, it is characterised in that:
The film switch circuit being oppositely arranged including two, and between the film switch circuit, described in connection two
The separation layer of film switch circuit；Wherein, each film switch circuit is respectively by substrate and the metal layer in substrate
It constitutes, the metal layer of two film switch circuits is oppositely arranged, and forms compaction cavum by the separation layer；
When the compaction cavum is squeezed by a degree of external force, the metal layer of two film switch circuits, which contacts, to be connected
It connects.
3. thin film switch as claimed in claim 2, it is characterised in that:
The separation layer (3) is super soft silicone gel, and the substrate (2) is PET material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820803127.0U CN208336037U (en) | 2018-05-28 | 2018-05-28 | A kind of thin film switch and its device for preparing thin film switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820803127.0U CN208336037U (en) | 2018-05-28 | 2018-05-28 | A kind of thin film switch and its device for preparing thin film switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208336037U true CN208336037U (en) | 2019-01-04 |
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ID=64775785
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820803127.0U Active CN208336037U (en) | 2018-05-28 | 2018-05-28 | A kind of thin film switch and its device for preparing thin film switch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511238A (en) * | 2018-05-28 | 2018-09-07 | 北京梦之墨科技有限公司 | A kind of thin film switch and its device and method for preparing thin film switch |
-
2018
- 2018-05-28 CN CN201820803127.0U patent/CN208336037U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511238A (en) * | 2018-05-28 | 2018-09-07 | 北京梦之墨科技有限公司 | A kind of thin film switch and its device and method for preparing thin film switch |
| CN108511238B (en) * | 2018-05-28 | 2023-09-26 | 北京梦之墨科技有限公司 | Membrane switch and method for preparing membrane switch |
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