CN208315722U - A kind of attenuator and attenuator film layer structure - Google Patents

Abstract

The utility model proposes a kind of attenuator film layer structures, are followed successively by Au layers, TiW layers, TiWN layers, TiW layers and TaN layers from top to bottom, the bottom is substrate.TiWN layer in the utility model prevents a large amount of Ti atom in TiW layers from avoiding the loss of Ti atom toward layer gold diffusion into the surface, thin film circuit is allowed to bear long-time at elevated temperature, to greatly improve the high-temperature stability and reliability of attenuator.

Description

A kind of attenuator and attenuator film layer structure

Technical field

The utility model relates to microwave regime, in particular to a kind of attenuator film layer structure further relates to have the film layer knot The attenuator of structure.

Background technique

Microwave attenuator is since it is with the spies such as small in size, working frequency high (up to tens GHz) and reliability height Point and the important component for becoming wireless communication system, especially in terms of automatic test is with control, it is desirable to be able to which realization is by counting The variable attenuator of calculation machine process control, i.e. programmable attenuator.And core component mostly important in attenuator, it is decaying Piece.The microwave attenuation piece being made of resistance material and microstrip line has the characteristics that small in size, precision is high, performance is stable, and more holds It is easy of integration in microwave circuit.

Electrical and mechanical life refers to that before programmable step attenuator fails, each attenuation units institute is attainable most Few action frequency.Here the principal element of failure is that the reed of programmable attenuator strikes the gold-plated electrode of attenuator repeatedly, is led to Often impact 200,000 times or so, will because of electrode layer gold film layer it is insecure so that layer gold by reed impact fall, cause to decline It is obstructed to subtract piece, to fail.

Existing film attenuator film layer structure is TaN/TiW/Au, as shown in Figure 1, from bottom to top successively including substrate 404, TaN layer 4014, TiW layer 4012, Au layer 4011.TaN film resistor material because have self-passivation, temperature resistance coefficient it is small, The advantages that moisture resistance is good, stability is high, working frequency is high, load power is big obtains big in microwave attenuation sheet resistance material The application of amount.

Attenuator processing and making process is needed by resistance trimming step, and resistance trimming is by thermal oxide, anodic oxidation, laser resistor trimming The methods of so that resistance is reached design requirement range.Attenuator generallys use thermal oxidation method resistance trimming in prior art, i.e., will decline Subtract piece and be placed on 400 DEG C or more of warm table and carry out Short Time Heating, aoxidizes TaN resistance film, so that resistance value be made to reach To target call range.

Existing film attenuator film layer structure heats under 400 DEG C of high temperature, and conductor layer gold surface can occur to be bubbled, change colour Phenomena such as, meanwhile, the decline of adhesion strength between each film layer leads to attenuator input and defeated so that the resistance to impact ability decline of film layer Termination electrode is after reed impact repeatedly out, Au layers of generation local shedding, so that attenuator fails, to reduce program-controlled decline Subtract the service life of device.

It is analyzed, failure main cause is that Ti mainly plays adhesive attraction in TiW layers, but Ti atom is very active, very It is easy to react with oxygen in air, especially when high-temperature heating, Ti atom can be accelerated to be diffused into layer gold surface, generate TiO₂, so that the Ti in TiW layers is largely lost, decline so as to cause with layer gold adhesion strength, so that layer gold is sent out after striking repeatedly Life falls off, and attenuator is caused to fail.

Therefore, attenuator how is made to be able to bear 400 DEG C or more of temperature during thermal oxide resistance trimming, layer gold will not be sent out It is current urgent problem to be solved that raw failure and adhesion strength, which decline problem to improve the service life of programmable attenuator,.

Utility model content

To solve above-mentioned the deficiencies in the prior art, the utility model proposes a kind of attenuator film layer structures, it is also proposed that A kind of attenuator with the film layer structure.

The technical solution of the utility model is achieved in that

A kind of attenuator film layer structure is followed successively by Au layers, TiW layers, TiWN layers, TiW layers and TaN layers, most bottom from top to bottom Layer is substrate.

Optionally, described Au layers with a thickness of 3~10 microns.

Optionally, described TiWN layers with a thickness of 50~70nm.

Optionally, described TiW layers with a thickness of 30~50nm.

Optionally, the substrate be purity 99.6%-100% aluminium oxide or purity 98% aluminium nitride or sapphire or Quartz.

The utility model also proposed a kind of attenuator, including substrate, input terminal and output end, ground terminal and resistance, It is characterized in that, the input terminal and output end, ground terminal have above-mentioned film layer structure.

Optionally, the attenuator is symmetrical along center line, and resistance is located at the center of substrate, input terminal and output end point It is not symmetricly set on the upper and lower ends of resistance, the first ground terminal and the second ground terminal connect the left and right sides of resistance, attenuator Attenuator circuit is full symmetric.

Optionally, the resistance is symmetrical structure.

The beneficial effects of the utility model are:

(1) a large amount of Ti atom avoids the loss of Ti atom, makes toward layer gold diffusion into the surface in TiWN layers of TiW layers of prevention Long-time at elevated temperature can be born by obtaining thin film circuit, to greatly improve the high-temperature stability and reliability of attenuator.

(2) the decaying piece performance is stablized, and resistance accuracy and attenuation accuracy are high, and resistance to impact performance is high.Through testing, declined using this Subtract the programmable attenuator of piece, the service life can achieve 5,000,000 times or more.

Detailed description of the invention

In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor Under, it is also possible to obtain other drawings based on these drawings.

Fig. 1 is existing film attenuator film layer structure schematic diagram；

Fig. 2 is the film attenuator film layer structure schematic diagram of the utility model；

Fig. 3 is the structural schematic diagram of the attenuator comprising the utility model film layer structure.

Specific embodiment

The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.

As shown in Fig. 2, the utility model proposes a kind of attenuator film layer structure, be followed successively by from top to bottom Au layer 4011, TiW layer 4012, TiWN layer 4013, TiW layer 4012 and TaN layer 4014, the bottom are substrate 404.

TiWN is stable diffusion barrier material, TiWN layer 4013 prevent in TiW layer largely Ti atom toward layer gold table Face diffusion, avoids the loss of Ti atom, thin film circuit is allowed to bear long-time at elevated temperature, to greatly improve The high-temperature stability and reliability of attenuator.

TiWN is existing known materials, and the utility model is not related to new material.

In a preferred embodiment, in the attenuator film layer structure Au layers with a thickness of 3~10 microns.

In a preferred embodiment, in the attenuator film layer structure TiWN layers with a thickness of 50~70nm.

In a preferred embodiment, in the attenuator film layer structure TiW layers with a thickness of 30~50nm.

In a preferred embodiment, the oxidation that substrate is purity 99.6%-100% in the attenuator film layer structure The aluminium nitride or sapphire or quartz of aluminium or purity 98%.

The utility model also proposed a kind of attenuator, including substrate, input terminal and output end, ground terminal and resistance, Middle input terminal and output end, ground terminal have the film layer structure in above-described embodiment.

Fig. 3 gives a specific embodiment of the utility model attenuator, and the attenuator in the embodiment includes substrate 404, the resistance of input terminal 401 and output end 405, the first ground terminal 402 and the second ground terminal 406, distributed centralization network 403, wherein input terminal 401 and output end 405, the first ground terminal 402 and the second ground terminal 406 have the film in above-described embodiment Layer structure.The attenuator is symmetrical along center line, and resistance 403 is located at the center of substrate 404, and resistance 403 is symmetrical junction Structure, since input terminal 401 and output end 405 are symmetrically arranged at the upper and lower ends of resistance 403, the first ground terminal 402 and Two ground terminals 406 connect the left and right sides of resistance 403, so that the attenuator circuit of attenuator is in a full symmetric state, Make the decaying flatness of attenuator good in this way, resistance accuracy and attenuation accuracy are high, reproducible.

It is 50 ± 0.5 Ω that the attenuator, which requires the impedance of input terminal and output end 401, and signal enters decaying from input terminal Piece, the gradually absorption by resistance 403 to power, practically necessary signal is exported from output end.

The decaying piece performance is stablized, and resistance accuracy and attenuation accuracy are high, and resistance to impact performance is high.Through testing, using the decaying The programmable attenuator of piece, service life can achieve 5,000,000 times or more.

The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model Protection scope within.

Claims (8)

1. a kind of attenuator film layer structure, which is characterized in that be followed successively by from top to bottom Au layers, TiW layers, TiWN layers, TiW layers and TaN layers, the bottom is substrate.

2. a kind of attenuator film layer structure as described in claim 1, which is characterized in that described Au layers with a thickness of 3~10 microns.

3. a kind of attenuator film layer structure as described in claim 1, which is characterized in that described TiWN layers with a thickness of 50~ 70nm。

4. a kind of attenuator film layer structure as described in claim 1, which is characterized in that described TiW layers with a thickness of 30~50nm.

5. a kind of attenuator film layer structure as described in claim 1, which is characterized in that the substrate is purity 99.6%- 100% aluminium oxide or the aluminium nitride or sapphire or quartz of purity 98%.

6. a kind of attenuator, including substrate, input terminal and output end, ground terminal and resistance, which is characterized in that the input terminal and Output end, ground terminal have film layer structure described in any one of claim 1 to 5.

7. a kind of attenuator as claimed in claim 6, which is characterized in that the attenuator is symmetrical along center line, and resistance is located at The center of substrate, input terminal and output end are symmetrically arranged at the upper and lower ends of resistance, and the first ground terminal and second connect Ground terminal connects the left and right sides of resistance, and the attenuator circuit of attenuator is full symmetric.

8. a kind of attenuator as claimed in claim 7, which is characterized in that the resistance is symmetrical structure.